CN107942540B - Phase-change-material-based optical modulation device with dynamic color display and preparation method thereof - Google Patents

Phase-change-material-based optical modulation device with dynamic color display and preparation method thereof Download PDF

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CN107942540B
CN107942540B CN201711337708.6A CN201711337708A CN107942540B CN 107942540 B CN107942540 B CN 107942540B CN 201711337708 A CN201711337708 A CN 201711337708A CN 107942540 B CN107942540 B CN 107942540B
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layer
metal
change material
phase change
color display
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CN107942540A (en
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罗先刚
李雄
蒲明博
马晓亮
宋世超
高平
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Institute of Optics and Electronics of CAS
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Institute of Optics and Electronics of CAS
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/0151Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index

Abstract

The invention provides a phase-change material-based light modulation device with dynamic color display and a preparation method thereof. According to the invention, through the mutual coupling effect of electromagnetic waves between the metal-phase change material-medium-metal structure and the electromagnetic response of the electromagnetic waves generated on the two layers of metal structures, the dynamic change of colors and the regulation and control of the working waveband of the device can be realized when the phase change material is subjected to phase state change, and the colors can reflect the change of the working waveband and the gray modulation degree in real time. The invention has simple structure, easy processing and use and can realize the multifunction of a single-structure device.

Description

Phase-change-material-based optical modulation device with dynamic color display and preparation method thereof
Technical Field
The invention belongs to the technical field of color display and light modulation, and particularly relates to a phase-change material-based light modulation device with dynamic color display and a preparation method thereof.
Background
The traditional color display technology adopts color absorption materials such as dyes, pigments and the like to perform spectral filtering color development. However, such materials have relatively low service life, complicated preparation process, and color crosstalk, which makes the color absorbing materials face a great challenge in applications such as high resolution display and imaging. The development of the science of nanotechnology, nanophotonics and the like makes artificial nanostructures such as metamaterials and super surfaces a new technology in the color development field. More importantly, the color presented by the structure can be changed by regulating the size, the shape, the period and the like of the nano structure. Compared with the traditional color development technology, the color generated by the structure, namely the structural color, has the characteristics of higher brightness, smaller size, fastness and the like, thereby having great advantages in color display, imaging technology and anti-counterfeiting technology. In addition, a structure with color dynamic regulation capability is an important development direction in structural color, however, most of the current structural color works have the defect of insufficient dynamic regulation capability or need specific conditions. Meanwhile, the multifunctional device can realize the functions of broadband and multiband light absorption, light modulation, light detection and the like, can greatly improve the use efficiency of the device, and can reduce the overall production cost, and the like, so that the multifunctional device is widely applied to various fields. Most common multifunctional devices adopt a cascade structure, but the device preparation process is more complex compared with a single-function device due to the cascade structure, and the device reliability is further reduced due to the problems of alignment precision and the like among the cascade structures.
Disclosure of Invention
In order to solve the problems, the invention provides a phase-change material based light modulation device with dynamic color display and a preparation method thereof, wherein dynamic color development of visible light can be realized in the phase-change material phase change process, and the infrared band working band generates a light modulation effect. The designed device adopts multiple physical modes to realize the multifunction of the device, and the application range of the device can be greatly improved under the condition of not increasing the difficulty of the processing technology.
In order to achieve the purpose, the invention adopts the following technical scheme:
the light modulation device with dynamic color display based on the phase change material comprises a light function element array and a control circuit and is characterized in that the light function element comprises a metamaterial structure, the metamaterial structure at least comprises a metal nanostructure layer and a metal reflector layer, and a dielectric layer and a phase change material layer are arranged between the metal nanostructure layer and the metal reflector layer.
As one of possible embodiments, the metamaterial structure further includes a substrate and/or a transparent protection layer, and the substrate, the metal mirror layer, the phase change material layer, the dielectric layer, the metal nanostructure layer and the transparent protection layer are sequentially distributed along a set direction.
Further, the metal nanostructure layer and/or the metal mirror layer at least comprises a single metal layer formed by any one of gold, platinum, silver, copper, aluminum and titanium or an alloy layer formed by any two or more.
Further, the metal nanostructure layer and/or the metal reflector layer include more than two single metal layers, more than two alloy layers or a stacked structure formed by stacking more than one single metal layers and more than one alloy layers.
Further, the metal nanostructure layer comprises a one-dimensional or two-dimensional grating, the period of the grating is 100-1000 nm, and the thickness is 5-150 nm.
Further, the thickness of the metal mirror layer is 50 nm or more, preferably 200 nm or less.
Further, the thickness of the dielectric layer is 3-100 nm, and the material includes but is not limited to silicon dioxide, titanium dioxide, aluminum oxide, silicon nitride, magnesium fluoride or zinc selenide.
Further, the material for forming the phase change material may be selected from, and not limited to, chalcogenide compounds, transition metal oxides, and the like, such as Vanadium Oxide (VO)xStoichiometric-dependent ratio), germanium antimony tellurium alloy (GexSbyTe)zThe compounding ratio depends on stoichiometry), a silver indium antimony tellurium compound (AgInSbTe), and the like, and the materials may be used alone or in combination.
Further, the transparent protective layer is mainly formed of a material with low absorption to incident waves, including but not limited to silicon dioxide, silicon nitride or aluminum oxide.
Further, the preparation method of the phase-change material-based light modulation device with dynamic color display comprises the following steps:
(1) preparing a substrate including a control circuit on a silicon wafer by using a standard CMOS process;
(2) preparing a metal reflector layer on a substrate by a metal film deposition method;
(3) preparing a phase change material layer and a dielectric layer on the metal reflector layer by a thin film deposition method;
(4) manufacturing a metal nano-structure layer on the dielectric layer by a thin film deposition method and a micro-nano processing method;
(5) preparing a transparent protective layer on the metal nanostructure layer by a thin film deposition method;
(6) and preparing the interconnected electrode by a micro-nano processing method.
The invention constructs a novel infrared light modulation technology with adjustable color display based on the phase-change material, wherein the electromagnetic property of the metamaterial mainly depends on the sub-wavelength structure, so that the metamaterial has great design freedom and can realize the control of an absorption peak in a larger wavelength range.
Moreover, the effective dielectric constant and the magnetic permeability of the metamaterial can be close to those of free space at specific wavelength by optimally designing the sub-wavelength structure, and then zero reflection is obtained.
Preferably, by combining the metamaterial with the sub-wavelength structure and the reflector, complete localization of the electromagnetic wave of a specific waveband can be realized.
And, according to the phase change property of the phase change material, the crystal composition mode of the phase change material is correspondingly changed, for example, vanadium dioxide is changed from a monoclinic system structure in a medium state to a rutile system structure in a metal state. According to the analysis of the first principle, the refractive index of the phase-change material can be obviously changed when the structural crystal system of the phase-change material is changed.
In the invention, the phase-change material can generate phase change under the action of an electric field, an optical field or Joule heat by external voltage or light irradiation, so that the electric (thermal) regulation and control of the refractive index of the phase-change material are obtained, and further the color change of a device in a visible light wave band, the gray modulation of the intensity of infrared reflection light and the wave band modulation are realized.
In addition, the infrared light modulator with the dynamic adjustable color display does not need to be similar to a multi-cascade structure device preparation process, can be integrated on a control circuit through film deposition and micro-nano processing, and realizes complete integration, so that the large-array color development light modulator can be manufactured at low cost, and the infrared working condition can be directly calibrated by adopting colors to replace an expensive infrared spectrometer.
Compared with the prior art, the invention has the advantages that:
(a) the invention adopts the multi-mode synergistic effect, and the device is simple to prepare;
(b) the invention can realize the multifunction of a single device structure;
(c) the invention can directly judge the modulation state through the appearance color of the device;
(d) the invention can directly judge the real-time temperature of the device through the appearance color of the device.
Drawings
FIG. 1 is a longitudinal cross-sectional view of a phase change material based light modulation device with dynamic color display in an alternative embodiment of the present invention;
FIG. 2 is a longitudinal cross-sectional view of a phase change material based light modulation device with dynamic color display in an alternative embodiment of the present invention;
FIG. 3 is a top view of a light modulation device with dynamic color display based on the use of a one-dimensional grating structure in an alternative embodiment of the present invention;
FIG. 4 is a top view of a light modulation device with dynamic color display based on the use of a two-dimensional grating structure in an alternative embodiment of the present invention;
FIG. 5 is a diagram of the operating state of a phase change material based light modulation device with dynamic color display in an alternative embodiment of the present invention; fig. 5(a) is a reflection spectrum in an operating state, and fig. 5(b) is a device appearance color in the operating state.
Detailed Description
One aspect of the invention provides a phase-change material-based light modulation device with dynamic color display, which mainly comprises a light function element array and a control circuit, wherein the light function element comprises a super-structure material structure, and the super-structure material structure at least comprises a metal nano-structure layer, a metal reflector layer, a dielectric layer and a phase-change material layer between the metal nano-structure layer and the metal reflector layer.
The modulation principle of the light modulation device with dynamic color display is based on the change of the refractive index of a material in the phase change process of a phase change material layer under bias voltage or light irradiation, and the multi-physical mode synergistic effect of the device is utilized, so that the change of color and the position of a modulation narrow-band absorption peak are realized, the continuous change of light waves with specific wavelengths between high reflection and high absorption is realized, and the modulation of the reflected light intensity is further obtained.
In a preferred embodiment of the present invention, referring to fig. 1, the phase-change material based light modulation device with dynamic color display comprises a substrate 00, a metal mirror layer 11, a phase-change material layer 22, a dielectric layer 33, a metal nanostructure layer 44 and a transparent protection layer 55. The substrate 00 and the transparent protective layer 55 may be removed separately or simultaneously according to different cases to constitute the entire device (see fig. 2). In addition, the positions of the phase change material layer 22 and the dielectric layer 33 may be interchanged. The metamaterial structure is designed to have low reflection at the wavelength location of the incident wave when the modulator is unbiased.
The optically functional elements form a two-dimensional (fig. 3) or one-dimensional (fig. 4) array of cells and are independently addressable, with the color and reflected intensity modulation of each cell being controlled by control circuitry.
The working principle is that incident electromagnetic wave 66 with specific wavelength is incident to the optical function element array, the structure of the metamaterial on the optical function element is optimized to be high in absorption at the wavelength, and the device presents certain color; after the metal nanostructure layer 44 and the metal mirror layer 11 are directly biased or irradiated by external modulation light, the phase change material layer 22 changes the refractive index due to the phase change, and further changes the absorption value at the wavelength of the incident light, and the change of the absorption value changes with the magnitude of the applied bias, so as to obtain the modulation of the intensity of the reflected light from the optical functional element, or it can be understood that the low reflection peak position of the super-structural material structure changes accordingly, the intensity modulation is realized by the reflected light at the wavelength position of the incident light, and then, by independently controlling the bias of each unit on the optical functional element array, the spatial light modulation capability can be obtained, and at the same time, the structural color also changes with the change of the refractive index.
Preferably, the light modulation device with dynamic color display may include a substrate 00, a metal mirror layer 11, a phase change material layer 22, a dielectric layer 33, a metal nanostructure layer 44, and a transparent protection layer 55, wherein the metal mirror layer 11, the phase change material layer 22, the dielectric layer 33, and the metal nanostructure layer 44 form a super-structure material structure.
Further, the substrate 00 is preferably silicon, and a control circuit is prepared.
Further, the metal materials of the metal mirror layer 11 and the metal nanostructure layer 44 can be selected from, but not limited to, a single metal layer, an alloy layer or a stacked structure of multiple single metal layers or alloy layers, such as gold, platinum, silver, copper, aluminum, titanium, and the like.
Further, the metal nanostructure layer 44 is a one-dimensional grating or a two-dimensional grating, the period is 100-2000 nm, and the thickness is 5-100 nm.
Further, the thickness of the metal reflector layer 11 is not less than 50 nm.
Further, the material for forming the phase-change material layer 22 may be selected from, and not limited to, chalcogenide, transition metal oxide, etc., such as Vanadium Oxide (VO)xStoichiometric-dependent ratio), germanium antimony tellurium alloy (GexSbyTe)zThe compounding ratio depends on stoichiometry), a silver indium antimony tellurium compound (AgInSbTe), and the like, and the materials may be used alone or in combination.
Further, the dielectric layer 33 can be selected from, but not limited to, silicon dioxide, silicon nitride, magnesium fluoride, zinc selenide, etc., and has a thickness of 5-100 nm.
Further, the transparent protection layer 55 is a low absorption material of incident light, such as silicon nitride, silicon dioxide, aluminum oxide, etc.
Another aspect of the present invention provides a method for manufacturing the aforementioned light modulation device with dynamic color display, comprising: a control circuit is prepared on a substrate, then a metal reflector, a dielectric layer and a phase change material layer are prepared, and then a metal nanostructure layer and a transparent protective layer are formed through further processing and are electrically interconnected.
Further, as one of more preferred embodiments, the preparation method may comprise the steps of:
(1) preparing a substrate including a control circuit on a silicon wafer by using a standard CMOS process;
(2) preparing a metal reflector layer on a substrate by a metal film deposition method;
(3) preparing a phase change material layer and a dielectric layer on the metal reflector layer by a thin film deposition method;
(4) manufacturing a metal nano-structure layer on the dielectric layer by a thin film deposition and micro-nano processing method;
(5) preparing a transparent protective layer on the metal nanostructure layer by a thin film deposition method;
(6) and preparing the interconnected electrode by a micro-nano processing method.
In summary, the phase-change-material-based optical modulation device with dynamic color display has the advantages of simple structure, high integration level, easiness in manufacturing, low cost, capability of realizing high-speed modulation, easiness in modulation depth regulation and control, and capability of reflecting the modulation effect of the infrared working band through color.
The technical solution of the present invention is described in detail below with reference to several embodiments and related drawings.
Example 1: referring to fig. 1 and fig. 3, the spatial light modulator based on the metamaterial structure of the present embodiment includes a substrate 00 (silicon) with a control circuit, a metal mirror 11 (silver), a phase change material layer 22 (vanadium dioxide), a dielectric layer 33 (silicon nitride), a metal nanostructure layer 44 (silver), and a transparent protection layer 55 (silicon dioxide). The device structure is selected as follows: the thickness of the metal nanostructure layer 44 is 70 nanometers, and the metal nanostructure layer is a two-dimensional grating structure, the side length of the metal grating is 220 nanometers, and the period is 440 nanometers; the phase change material layer 22 has a thickness of 20 nm; the thickness of the dielectric layer 33 is 5 nm; the thickness of the metal reflector 11 is 70 nanometers; the transparent protective layer 55 has a thickness of 100 nm. Because the metal nanostructure layer 44 has symmetry, the spatial light modulator of the present embodiment has the same effect on each polarized light at normal incidence, as shown in fig. 5, when vanadium dioxide is in a medium state, the device is green, the infrared operating wavelength thereof is 2.224 μm, and the reflectivity of the optical functional element is 0.12; when vanadium dioxide was in the metallic state, the device exhibited a sapphire blue color with a reflectivity of 0.80 at 2.224 microns. The modulation depth reaches 0.68. When the vanadium dioxide is changed between a medium state and a metal state, the reflectivity of the optical functional element is changed between 0.12 and 0.8, and gray scale adjustment can be realized. Since each cell in the array of optically functional elements is independently addressable, the entire light modulator can achieve spatial modulation of the intensity of the reflected light and can be directly reflected by color.
The present example was carried out by the following preparation method:
(1) preparing a substrate including a control circuit on a silicon wafer by using a standard CMOS process;
(2) preparing a metal reflector layer on a substrate by a metal film deposition method;
(3) preparing a dielectric layer and a phase change material layer on the metal reflector layer by a thin film deposition method;
(4) manufacturing a metal nano-structure layer on the phase-change material layer by a thin film deposition and micro-nano processing method;
(5) preparing a transparent protective layer on the metal nanostructure layer by a thin film deposition method;
(6) and preparing the interconnected electrode by a micro-nano processing method.
One or more preferred embodiments of the present invention are disclosed, and it is apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention.
Accordingly, while the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above-described specific embodiments, which are merely illustrative and not restrictive. The invention has not been described in detail and is part of the common general knowledge of a person skilled in the art.

Claims (9)

1. A phase change material based light modulation device with dynamic color display comprising an array of optically functional elements and a control circuit, characterized in that: the optical functional element comprises a metamaterial structure, the metamaterial structure at least comprises a metal nanostructure layer (44) and a metal reflector layer (11), and a dielectric layer (33) and a phase-change material layer (22) are arranged between the metal nanostructure layer and the metal reflector layer;
the metamaterial structure further comprises a substrate (00) and a transparent protection layer (55), and the substrate, the metal reflector layer, the phase change material layer, the dielectric layer, the metal nanostructure layer and the transparent protection layer are sequentially distributed along a set direction; the working principle is that incident electromagnetic waves (66) with specific wavelength are incident to the optical function element array, the structure of the metamaterial on the optical function element is optimized to be high in absorption at the wavelength, and the device presents certain color; after the metal nanostructure layer (44) and the metal mirror layer (11) or the metal mirror layer (11) is directly biased or irradiated by external modulation light, the phase change material layer (22) changes the refractive index due to phase state change, so that the absorption value at the wavelength of incident light is changed, and the change of the absorption value is changed along with the magnitude of the external bias voltage, so that the modulation of the intensity of the reflected light from the optical functional element is obtained, or it can be understood that the low reflection peak position of the metamaterial structure is changed accordingly, the intensity modulation of the reflected light at the wavelength position of the incident light is realized, and then, the bias voltage of each unit on the optical functional element array is independently controlled, so that the spatial optical modulation capability can be obtained, and the structural color is changed along with the change of the refractive index.
2. The phase change material based light modulation device with dynamic color display of claim 1, wherein: the metal nanostructure layer and/or the metal reflector layer at least comprises a single metal layer formed by any one of gold, platinum, silver, copper, aluminum and titanium or an alloy layer formed by any two or more than two.
3. The phase change material based light modulation device with dynamic color display of claim 2, wherein: the metal nanostructure layer and/or the metal reflector layer comprise more than two single metal layers, more than two alloy layers or a superposed structure formed by laminating more than one single metal layers and more than one alloy layers.
4. A phase change material based light modulation device with dynamic color display according to any one of claims 1-3, characterized in that: the metal nanostructure layer comprises a one-dimensional or two-dimensional grating, the period of the grating is 100-1000 nanometers, and the thickness of the grating is 5-150 nanometers.
5. A phase change material based light modulation device with dynamic color display according to any one of claims 1-3, characterized in that: the thickness of the metal reflector layer is more than 50 nanometers.
6. A phase change material based light modulation device with dynamic color display according to any one of claims 1-3, characterized in that: the thickness of the dielectric layer is 3-100 nanometers, and the material of the dielectric layer comprises silicon dioxide, titanium dioxide, aluminum oxide, silicon nitride, magnesium fluoride or zinc selenide.
7. A phase change material based light modulation device with dynamic color display according to any one of claims 1-3, characterized in that: the phase change material is vanadium oxide or germanium antimony tellurium alloy.
8. A phase change material based light modulation device with dynamic color display according to any one of claims 1-3, characterized in that: the transparent protective layer is mainly formed by a material with low absorption to incident waves, and the material with low absorption to the incident waves comprises silicon dioxide, silicon nitride or aluminum oxide.
9. A method of fabricating a phase change material based light modulation device with dynamic color display as claimed in any one of claims 1-8, characterized by: the method comprises the following steps:
(1) preparing a substrate including a control circuit on a silicon wafer by using a standard CMOS process;
(2) preparing a metal reflector layer on a substrate by a metal film deposition method;
(3) preparing a phase change material layer and a dielectric layer on the metal reflector layer by a thin film deposition method;
(4) manufacturing a metal nano-structure layer on the dielectric layer by a thin film deposition method and a micro-nano processing method;
(5) preparing a transparent protective layer on the metal nanostructure layer by a thin film deposition method;
(6) and preparing the interconnected electrode by a micro-nano processing method.
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