CN112415785A - Spatial light modulation system based on phase change material - Google Patents

Spatial light modulation system based on phase change material Download PDF

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Publication number
CN112415785A
CN112415785A CN202011079247.9A CN202011079247A CN112415785A CN 112415785 A CN112415785 A CN 112415785A CN 202011079247 A CN202011079247 A CN 202011079247A CN 112415785 A CN112415785 A CN 112415785A
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phase change
change material
phase
layer
modulation unit
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高鼎
程志渊
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Zhejiang University ZJU
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Zhejiang University ZJU
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/0009—Materials therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0102—Constructional details, not otherwise provided for in this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0126—Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass

Abstract

The invention discloses a spatial light modulation system based on a phase change material, which comprises: the input system is used for inputting input light to the phase change material modulation unit array; the phase change material modulation unit array is formed by arranging phase change modulation units on a plane and is used for carrying out two-dimensional spatial distribution modulation on the phase and amplitude characteristics of the input light; the optical addressor and the electric addressing circuit are connected with the phase change material modulation unit array and are used for independently addressing and controlling each phase change modulation unit in the phase change material modulation unit array under the control of an external signal; and the output system is connected with the phase change material modulation unit array and is used for outputting the optical field regulated and controlled by the phase change material modulation unit array. The phase change modulation unit has the main functional layer of a phase change material layer, and can change the optical characteristics of the phase change material by applying certain electric/optical stimulation to the phase change material. The phase and amplitude of the input light can be regulated and controlled through the thickness and the structure of a certain designed material.

Description

Spatial light modulation system based on phase change material
Technical Field
The invention belongs to the technical field of microelectronics/photoelectronics, and particularly relates to a spatial light modulation system based on a phase-change material.
Background
A Spatial Light Modulator (SLM) is a device that modulates characteristics such as amplitude and phase of an optical wave by a predetermined device structure under active control of an electric signal or an optical signal, and writes predetermined information into the optical wave. In general, a spatial light modulator comprises a plurality of individual cells (pixels) spatially arranged in a one-dimensional or two-dimensional array, each cell being independently controllable to control the spatial distribution of the output light. Spatial light modulators are widely used in the fields of display, projection, optical information processing, etc., and SLMs are also the building blocks and core devices in optical computing and optical neural network systems.
The SLM is classified into two categories, optical addressing and electrical addressing, according to the signal source of the spatial light modulator, and if classified according to the way the SLM reads out the signal, it can be classified into transmission type and reflection type. The most common spatial light modulators are liquid crystal spatial light modulators (LC-SLM), Digital Micromirror Devices (DMD). In general, a liquid crystal spatial light modulator modulates incident light by changing optical properties of a liquid crystal material through an electric signal or an optical signal. Digital micromirror devices rely on micro-electromechanical systems (MEMS) to control the rotation of the micromirror to modulate the amplitude of light waves.
With the development of optical technology, the requirements for spatial light modulators are also increasing. In many applications (e.g., in the field of optical computing and optical communications), a spatial light modulator with higher resolution, higher speed and better reliability is required to improve the ability to process information. Although the technology of the liquid crystal spatial light modulator on the market is mature, the corresponding speed is slow due to some characteristics of the liquid crystal material, the response time is still in the millisecond level, and the area of a single unit (pixel) cannot be small (the transverse size is more than 2 um). The digital micro-mirror device has a complicated MEMS structure, a large pixel unit size (more than 5.4 um), high manufacturing difficulty, high cost and general reliability. Moreover, the digital micro-mirror can only modulate the amplitude information of light, but cannot modulate the phase, polarization and other light wave information, and the application is limited.
The phase change material is characterized by having a plurality of changeable amorphous states, polycrystalline states and other phase states and being capable of carrying out reversible rapid transition between different phase states. In different phases, the optical characteristics, including refractive index and absorption coefficient, are quite different, and the electrical characteristics are mainly represented by quite different resistance values. In the last 30 years, phase change materials have been widely used in multimedia optical storage, such as DVDs; in the last 10 years, with the development of microelectronics, phase change materials have begun to be applied to high speed nonvolatile memories. The phase change material can be roughly divided into two types, one is vanadium dioxide (VO)2) The volatile phase change material is a monostable state, and has only one stable phase state at different temperatures, and energy is required to be continuously supplied to maintain the state of the volatile phase change material in order to maintain the corresponding phase state. The other is a chalcogenide phase change material ((e.g. Ge)2Sb2Te5、Sb2S3Etc.) are typically non-volatile, have multiple stable states, a stable amorphous state, and one or more stable crystalline states that can undergo reversible switching upon electrical or optical stimuli. The switching speed is in the order of nanoseconds (10ns-30 ns).
Based on the above, the invention provides a high-resolution and high-speed spatial light modulator structure based on phase-change materials.
Disclosure of Invention
The embodiment of the invention aims to provide a spatial light modulation system based on a phase-change material, which is used for solving the problems of low speed, low resolution and long response time in the prior art.
In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions: a phase change material based spatial light modulation system comprising:
the input system is used for inputting input light to the phase change material modulation unit array;
the phase change material modulation unit array is formed by arranging phase change modulation units on a plane and is used for carrying out two-dimensional spatial distribution modulation on the phase and amplitude characteristics of the input light;
the optical addressor and the electric addressing circuit are connected with the phase change material modulation unit array and are used for independently addressing and controlling each phase change modulation unit in the phase change material modulation unit array under the control of an external signal;
and the output system is connected with the phase change material modulation unit array and is used for outputting the optical field regulated and controlled by the phase change material modulation unit array.
Further, each phase change modulation unit can be independently controlled, and the phase change modulation units are controlled by two stimulation methods of current pulse and laser pulse.
Furthermore, the phase change modulation unit is composed of an anti-reflection layer, an upper transparent electrode, a phase change material layer, a lower metal electrode and a substrate in sequence, wherein the anti-reflection layer is arranged on the surface of the whole phase change modulation unit, electric pulse energy stimulation is applied to the phase change material layer through the upper transparent electrode and the lower metal electrode, the lower metal electrode is also used for reflecting incident light, and the substrate is used as a support of the whole phase change modulation unit.
Furthermore, the material of the phase-change material layer is one of germanium-antimony-tellurium alloy, antimony sulfide and vanadium dioxide, and the thickness of the phase-change material layer is between 5nm and 5 um.
Furthermore, the phase change modulation unit is composed of an anti-reflection layer, a photonic crystal layer and a heating electrode in sequence, wherein the anti-reflection layer is arranged on the surface of the whole phase change modulation unit, and the photonic crystal layer is composed of phase change material layers and dielectric layers which are arranged periodically.
Further, the total number of the photonic crystal layers is 4-20, wherein the thickness of the phase change material layer and the dielectric layer is 1/4 which is used for adjusting the wavelength of light in the medium, the dielectric layer is a transparent material, and the transparent material is Indium Tin Oxide (ITO) and silicon dioxide (SiO)2) And the phase change material layer is made of one of germanium antimony tellurium alloy, antimony sulfide and vanadium dioxide.
Furthermore, the phase change modulation unit is composed of an incident light anti-reflection layer, an upper transparent electrode, a phase change material layer, a lower transparent electrode and an emergent light anti-reflection layer in sequence, and the upper transparent electrode and the lower transparent electrode are transparent to the modulated light.
Furthermore, the phase change modulation unit is composed of an anti-reflection layer, a phase change material layer, a light blocking layer and a transparent substrate in sequence, wherein the light blocking layer is opaque to writing light and transparent to incident light.
Furthermore, the phase change modulation unit sequentially comprises an anti-reflection layer, a protection layer, a phase change material nano array layer, a heating electrode and a substrate, wherein the phase change material nano array layer is a nano array formed by regularly arranging phase change material nano units, and the size of the internal units of the phase change material nano array is 10-500 nanometers.
Compared with the background technology, the invention has the following beneficial effects:
(1) according to the method, the phase-change material is used for modulating the optical field, the phase-change material has larger optical difference among different phase states, the transmission or reflection method can be used for modulating information such as the phase, amplitude, polarization and the like of light, the modulation speed is based on the phase-change rate of the phase-change material and can reach within 50ns, and the ultra-fast and efficient light wave information modulation is realized.
(2) By the micro-nano device processing technology, the size of a modulation unit of the spatial light modulation system can be between 50nm and 100um, and the light wave information modulation with ultrahigh resolution can be realized.
(3) By adopting different phase change materials and structures, the spatial light modulation from ultraviolet to middle infrared and other wave bands can be covered.
(4) The device is a pure solid state device, and benefits from the extremely high number of recyclable phase change times (10) of the phase change material12Second), the device has very high stability and reliability.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a phase change material based spatial light modulation system according to an embodiment of the present invention;
FIG. 2 is a schematic side view of an array structure of spatial light modulators in an embodiment of the present invention;
FIG. 3 is a schematic surface view of an array structure of a spatial light modulator in an embodiment of the invention;
FIG. 4 illustrates a phase change modulation cell structure A according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a phase change modulation cell structure B according to an embodiment of the present invention;
FIG. 6 shows a phase change modulation cell structure C according to an embodiment of the present invention;
FIG. 7 is a phase change modulation cell structure D according to an embodiment of the present invention;
FIG. 8 illustrates a phase change modulation cell structure E according to an embodiment of the present invention;
FIG. 9 is a graph of the refractive index of phase change material antimony sulfide in different phases in an embodiment of the present invention;
FIG. 10 shows the refractive index n and extinction coefficient k of vanadium dioxide, a phase change material, at different temperatures, according to an embodiment of the present invention;
FIG. 11 shows a 6-cycle photonic crystal structure (phase change material Ge) in an embodiment of the present invention2Sb2Te5) The near infrared reflection spectrum experiment test value of (1).
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
Exemplary embodiments according to the present application will now be described in more detail with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art, in the drawings, it is possible to enlarge the thicknesses of layers and regions for clarity, and the same devices are denoted by the same reference numerals, and thus the description thereof will be omitted.
Fig. 1 is a spatial light modulation system based on phase change material for modulating two-dimensional light wave distribution, which includes a phase change material modulation cell array, an optical addressor and an electrical addressing circuit, an input system, and an output system, wherein the input system is used for inputting input light to the phase change material modulation cell array; the phase change material modulation unit array is formed by arranging phase change modulation units on a plane and is used for carrying out two-dimensional spatial distribution modulation on the phase and amplitude characteristics of the input light; the optical addressor and the electric addressing circuit are connected with the phase change material modulation unit array and are used for independently addressing and controlling each phase change modulation unit in the phase change material modulation unit array under the control of an external signal; and the output system is connected with the phase change material modulation unit array and is used for outputting the optical field regulated and controlled by the phase change material modulation unit array.
Fig. 2 and 3 are schematic diagrams of modulation cell arrays. The plurality of units are arranged in a two-dimensional space array, the size of each unit is 50nm-100um, and the unit distance is controlled by a preparation process and is between 100nm-100 um. Each phase change regulating unit can be independently addressed and controlled. The state of the modulation unit can be changed by applying certain electric stimulation/optical stimulation to the corresponding phase change modulation unit through the addresser. The phase and amplitude information of the input light wave can be rapidly modulated in a two-dimensional space and then output through an output system.
As shown in fig. 4-8, is a phase change modulation cell structure based on phase change materials. The structure has at least one phase change material layer as the main functional layer for modulating light wave. The phase change material layer can be one of germanium antimony tellurium alloy, antimony sulfide and vanadium dioxide. The phase change material layer has at least two phase states with a large difference in optical properties between the different phase states in the respective wavelength ranges (fig. 9-10). The phase change material can be reversibly changed in phase state by applying electrical stimulation through the electrodes or by optical stimulation, which changes optical properties such as refractive index and extinction coefficient of the material. When input light passes through the phase change material, the change of the optical properties of the phase change material can cause the optical path difference, the reflectivity and the transmissivity of the incident light to be special. The phase of the output light is changed due to the change of the optical path difference, and the phase-change materials with different thicknesses can generate different phase differences on the incident light. The change of the reflectivity and the transmissivity can effectively regulate and control the intensity of the output light.
Example 1:
fig. 4 shows an electrically addressable reflective phase-change modulation unit, which sequentially comprises an anti-reflection layer, an upper transparent electrode, a phase-change material layer, a lower metal electrode, and a substrate, wherein incident light passes through the anti-reflection layer, the upper transparent electrode, and the phase-change material layer, is reflected by the lower metal electrode, and exits from the upper surface anti-reflection layer, and the substrate serves as a support for the entire phase-change modulation unit. The phase change material layer is electrically stimulated through the upper transparent electrode and the lower metal electrode, so that the optical properties of the phase change material can be changed. FIG. 9 is phase change material antimony sulfide (Sb)2S3) The picture that the refractive index and extinction coefficient of the material change with the wavelength when in different phase states has larger difference between the refractive index and the extinction coefficient of the phase change material in different phase states. FIG. 10 shows vanadium dioxide (VO) as a phase change material2) Optical property curves at different temperatures. The control of the crystalline state and amorphous state conversion of the chalcogenide phase change material is as follows:
changing from the crystalline state to the amorphous state requires the application of a pulse of very short duration and high amplitude.
Changing from the amorphous state to the crystalline state requires the application of a pulse of longer duration and lower amplitude.
The change of the phase state of the phase-change material corresponds to the change of the refractive index of the whole layer of the phase-change material layer. This causes the optical path difference of the incident light to change, thereby adjusting the optical phase characteristics. The thickness of the phase change material needs to be designed according to the wavelength of the modulated light and the phase depth of the modulation, typically between 5nm and 5 μm.
Example 2:
as shown in fig. 5, the phase change modulation unit is another electrically addressable reflective phase change modulation unit, and the phase change modulation unit is sequentially composed of an anti-reflection layer, a photonic crystal layer and a heating electrode, wherein the anti-reflection layer is on the whole surface of the phase change modulation unit, the photonic crystal layer is composed of a phase change material layer and a dielectric layer which are periodically arranged, the structure has no upper electrode, and only a lower electrode serves as a micro-heating device.
The modulation part in the structure is formed by combining two materials, namely a phase change material layer and a dielectric layer, and a one-dimensional photonic crystal or a quasi-photonic crystal is generally formed by the two materials. The phase-change material on the lower electrode is heated by the heat generated by the lower electrode, so that the optical property of the phase-change material is changed, the reflectivity of the structure can be effectively modulated by the change of the optical property of the material, namely, the amplitude information of the optical wave is regulated and controlled by the band gap effect of the one-dimensional photonic crystal. The dielectric material needs to be transparent to the respective wavelength band. The number of layers of the repeating unit is generally between 4 and 20, wherein the thickness of the phase change material layer and the dielectric layer is 1/4 which is used for regulating the wavelength of light in the medium, the dielectric layer is a transparent material, and the transparent material is Indium Tin Oxide (ITO) and silicon dioxide (SiO)2) And titanium nitride (TiN).
FIG. 11 shows a phase change material Ge2Sb2Te5And a dielectric material SiO2And forming a reflectivity test curve of the one-dimensional photonic crystal in a near infrared band. Ge (germanium) oxide2Sb2Te5Thickness of 117nm, SiO2The thickness was 200 nm. Wherein the solid line corresponds to Ge2Sb2Te5In the crystalline state, where the structure has an extremely high reflectivity, close to 1, the dashed line represents Ge2Sb2Te5In the amorphous state, the structure has a low reflectivity. It can be seen that the reflectivity of the structure can be effectively modulated when the GST is in different phases.
Example 3:
as shown in fig. 6, the phase change modulation unit is an electrically addressable transmissive phase change modulation unit, and the phase change modulation unit is sequentially composed of an incident light antireflection layer, an upper transparent electrode, a phase change material layer, a lower transparent electrode, and an emergent light antireflection layer, where the upper transparent electrode and the lower transparent electrode are transparent to modulated light. The incident light penetrates through the anti-reflection layer and the transparent electrode, is modulated by the phase-change material and then is emitted. The anti-reflection layer can effectively reduce the reflection of the interface to light, and the loss of the phase change material layer corresponding to the light wave of the corresponding wave band is small. And applying current pulses to the phase change material layer through an external circuit and the upper and lower transparent electrodes to change the phase state of the phase change material so as to modulate incident light.
Example 4:
as shown in fig. 7, is an optically addressed reflective phase change modulation cell. The phase change modulation unit is composed of an anti-reflection layer, a phase change material layer, a light blocking layer and a transparent substrate in sequence, wherein the light blocking layer is opaque to writing light and transparent to incident light. The light blocking layer is to avoid interference of the write light with the modulated light. The structure does not need electrodes, but directly controls the phase state of the phase-change material through the energy of laser, thereby realizing the function of optical addressing modulation. The phase state of the phase-change material in the modulation unit is changed by applying laser pulse stimulation to the corresponding modulation unit through the optical addresser, and light is modulated.
Example 5:
fig. 8 shows a phase change modulation cell using metamaterial technology. The phase change modulation unit is composed of an anti-reflection layer, a protective layer, a phase change material nano array layer, a heating electrode and a substrate in sequence, the phase change material nano array layer is a nano array formed by regularly arranging phase change material nano units, and the size of the unit inside the phase change material nano array is 10 nanometers to 500 nanometers. By utilizing the special regulation and control function of the nano array on light, the structure not only can modulate the amplitude and the phase of the light, but also can realize accurate control on the characteristics of the light such as polarization and the like.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A phase change material based spatial light modulation system, comprising:
the input system is used for inputting input light to the phase change material modulation unit array;
the phase change material modulation unit array is formed by arranging phase change modulation units on a plane and is used for carrying out two-dimensional spatial distribution modulation on the phase and amplitude characteristics of the input light;
the optical addressor and the electric addressing circuit are connected with the phase change material modulation unit array and are used for independently addressing and controlling each phase change modulation unit in the phase change material modulation unit array under the control of an external signal;
and each phase change modulation unit can be independently controlled, and is controlled by two stimulation methods of current pulse and laser pulse.
2. The system according to claim 1, wherein the phase change modulation unit comprises an anti-reflection layer, an upper transparent electrode, a phase change material layer, a lower metal electrode, and a substrate in sequence, wherein the anti-reflection layer is on the surface of the entire phase change modulation unit, and applies electric pulse stimulation to the phase change material layer through the upper transparent electrode and the lower metal electrode, the lower metal electrode is further configured to reflect incident light, and the substrate serves as a support for the entire phase change modulation unit.
3. The system according to claim 2, wherein the material of the phase change material layer is one of ge-sb-te alloy, sb-sulfide, and v-dioxide.
4. A phase change material based spatial light modulation system according to claim 3, wherein the phase change material layer is between 5nm-5um thick.
5. The system according to claim 1, wherein the phase change modulation unit comprises an anti-reflection layer, a photonic crystal layer and a heating electrode in sequence, wherein the anti-reflection layer is disposed on the surface of the phase change modulation unit, and the photonic crystal layer comprises a phase change material layer and a dielectric layer which are periodically arranged.
6. The phase change material based spatial light modulation system of claim 5, wherein the photonic crystal layer has a total number of layers of 4-20, wherein the phase change material layer and the dielectric layer have a thickness of 1/4 which is tuned to control the wavelength of light in the medium, and wherein the dielectric layer is a transparent material.
7. The system according to claim 6, wherein the transparent material is Indium Tin Oxide (ITO), silicon dioxide (SiO)2) And the phase change material layer is made of one of germanium antimony tellurium alloy, antimony sulfide and vanadium dioxide.
8. The system according to claim 1, wherein the phase change modulation unit comprises an incident light anti-reflection layer, an upper transparent electrode, a phase change material layer, a lower transparent electrode, and an emergent light anti-reflection layer in sequence, and the upper transparent electrode and the lower transparent electrode are transparent to the modulated light.
9. The system as claimed in claim 1, wherein the phase-change modulation unit comprises an anti-reflection layer, a phase-change material layer, a light blocking layer, and a transparent substrate, the light blocking layer being opaque to writing light and transparent to incident light.
10. The phase-change-material-based spatial light modulation system according to claim 1, wherein the phase-change modulation unit is composed of an anti-reflection layer, a protective layer, a phase-change-material nano-array layer, a heating electrode and a substrate in sequence, the phase-change-material nano-array layer is a nano-array formed by regularly arranging phase-change-material nano-units, and the size of an internal unit of the phase-change-material nano-array is 10 nanometers to 500 nanometers.
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CN113376870A (en) * 2021-05-19 2021-09-10 杭州电子科技大学 Space light type electro-optical modulation device based on phase change material and manufacturing method thereof
CN113406815A (en) * 2021-05-19 2021-09-17 华南理工大学 Terahertz active super-surface amplitude type spatial modulator
CN115639698A (en) * 2022-12-07 2023-01-24 之江实验室 C-waveband silicon waveguide micro-ring modulator based on phase-change material antimony sulfide and modulation method
CN117075366A (en) * 2023-08-28 2023-11-17 中山大学 Electric control phase change control module and control method based on phase change microarray

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