CN109545179A - A kind of closely perfect absorber of light of the ultra wide band based on refractory material - Google Patents
A kind of closely perfect absorber of light of the ultra wide band based on refractory material Download PDFInfo
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- G—PHYSICS
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- G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/16—Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
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Abstract
The invention discloses a kind of closely perfect absorber of light of ultra wide band based on refractory material.The closely perfect absorber of light of the ultra wide band is followed successively by the first metal layer, dielectric layer, second metal layer, the first dielectric grating layer, metal grating layer and the second dielectric grating layer from the bottom to top；The first metal layer, the dielectric layer and the second metal layer constitute packed structures；The first dielectric grating layer, the metal grating layer and the second dielectric grating layer constitute optical grating construction.The present invention greatly extends the wave-length coverage and absorptivity of light absorption.
Description
Technical field
The present invention relates to nearly perfect absorber of light fields, inhale more particularly to a kind of closely perfect light of ultra wide band based on refractory material
Acceptor.
Background technique
Surface plasmon resonance (Surface plasmons resonance) typically refers to the freely electricity of metal structure surface
Son adds the collective oscillation under electromagnetic wave irradiation outside, forms local Electromagnetic enhancement effect in metal surface.Meta Materials refer to
A kind of nanostructure manufactured by engineer, the performances such as magnetic conductivity, refractive index can artificial adjustment, receiving in recent years
The fields such as meter Guang Xue, material science are widely used.
The concept of surface phasmon electromagnetism Meta Materials perfection absorber is by Landy et al. 2008 in " Physical Review
Letters " it is put forward for the first time in (volume 100, page 207402) paper for delivering.Hereafter, people to various narrowbands and
The perfect electromagnetic absorption structure in broadband has made extensive and intensive studies.Traditional Meta Materials perfection absorber is generally three layers
Structure: lighttight metallic substrates, intermediate dielectric film layer, top layer are the metal micro structures that there is plasmon resonance to respond.
By rationally designing the parameter of material and the size of structure, so that the electromagnetic component generation between incident light and structure couples,
So that light reflectivity (R) and light transmission (T) level off to 0 in a certain wave-length coverage, to realize the suction close to 100%
Luminosity (A=1-R-T), i.e., close perfect light absorption.But traditional nearly perfect light absorber often can only be in relatively narrow wavelength model
Enclose the nearly perfect light absorption of interior realization.In addition, these electromagnetic wave perfection light absorption systems be typically all be based on precious metal material (such as
Gold, silver) it is fabricated, the free electron oscillation of these metal materials necessarily leads to strong ohmic loss and fuel factor, to nanometer material
Expect that the stability influence of structure is very big, such absorber of light there is very big drawback under the conditions of high fever.
Therefore, design invents a kind of closely perfect absorber of light of the ultra wide band based on refractory material for overcoming existing research body
It can not be provided simultaneously with the closely perfect light absorption in broadband and the high heat condition of high temperature resistant in system and invention, while also wanting the technologies such as easily fabricated
Require very important realistic meaning and application prospect.
Summary of the invention
The object of the present invention is to provide a kind of closely perfect absorber of light of ultra wide band based on refractory material, greatly extend light suction
The wave-length coverage and absorptivity of receipts.
To achieve the above object, the present invention provides following schemes:
A kind of closely perfect absorber of light of the ultra wide band based on refractory material, the closely perfect absorber of light of ultra wide band are followed successively by from the bottom to top
The first metal layer, dielectric layer, second metal layer, the first dielectric grating layer, metal grating layer and the second dielectric grating
Layer；The first metal layer, the dielectric layer and the second metal layer constitute packed structures；The first dielectric light
Grid layer, the metal grating layer and the second dielectric grating layer constitute optical grating construction.
Optionally, the material of the first metal layer, the second metal layer and the metal grating layer is refractory material.
Optionally, the thickness of the first metal layer is greater than or equal to 150nm, the second metal layer and the metal grating
Layer is with a thickness of 10-60nm.
Optionally, the material of the dielectric layer, the first dielectric grating layer and the second dielectric grating layer is
Dielectric material.
Optionally, the dielectric layer, the first dielectric grating layer and the second dielectric grating layer with a thickness of
60-220nm。
Optionally, the grating slit width of the optical grating construction is 20-220nm.
Optionally, the screen periods of the optical grating construction are 200-410nm.
Optionally, the production method of the closely perfect absorber of light of the ultra wide band based on refractory material includes:
The first metal layer, dielectric layer and the second metal are sequentially depositing on the quartz wafer of polishing using magnetic control sputtering device
Layer；
A layer photoresist is uniformly coated in the second metal layer；
One-dimensional photoresist fringe period structure is prepared in the second metal layer using the method for electron beam lithography；
First dielectric grating layer, metal are sequentially depositing in the one-dimensional photoresist fringe period structure using magnetic control sputtering device
Grating layer and the second dielectric grating layer；
Dielectric layer and metal layer on the one-dimensional photoresist fringe period structure striped is removed using the method for Lift-off,
Retain the dielectric layer and metal layer between the one-dimensional photoresist fringe period structure striped；
Using going glue to remove the one-dimensional photoresist fringe period structure in second metal layer, complete the production.
Compared with prior art, the present invention has following technical effect that the present invention by accumulating multi-layer grating (IMI) and multilayer
Structure MIM integration, greatly extends the wave-length coverage of light absorption.And the present invention is using the refractory materials such as titanium, chromium, tungsten composition
Perfect absorber of light has the loss of lower metal ohmic, better fuel factor and thermal stability.By adjustment structure size and
The closely perfect light absorption of ultra wide band can be realized in visible-middle infrared band by optimizing material parameter.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to required in embodiment
The attached drawing used is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, right
For those of ordinary skill in the art, without any creative labor, it can also be obtained according to these attached drawings
Other attached drawings.
Fig. 1 is the structural schematic diagram of the closely perfect absorber of light of ultra wide band of the embodiment of the present invention based on refractory material；
Fig. 2 is the production method flow chart of the closely perfect absorber of light of ultra wide band of the embodiment of the present invention based on refractory material；
Fig. 3 is the abosrption spectrogram of the closely perfect absorber of light of the ultra wide band based on refractory material of the embodiment of the present invention one；
Fig. 4 is the abosrption spectrogram of the closely perfect absorber of light of the ultra wide band based on refractory material of the embodiment of the present invention two；
Fig. 5 is the abosrption spectrogram of the closely perfect absorber of light of the ultra wide band based on refractory material of the embodiment of the present invention three；
Fig. 6 is the abosrption spectrogram of the closely perfect absorber of light of the ultra wide band based on refractory material of the embodiment of the present invention four；
Fig. 7 is the abosrption spectrogram of the closely perfect absorber of light of the ultra wide band based on refractory material of the embodiment of the present invention five；
Fig. 8 is the abosrption spectrogram of the closely perfect absorber of light of the ultra wide band based on refractory material of the embodiment of the present invention six.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clearly and completely
Description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of closely perfect absorber of light of ultra wide band based on refractory material, greatly extend light suction
The wave-length coverage and absorptivity of receipts.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific embodiment party
The present invention is described in further detail for formula.
As shown in Figure 1, a kind of closely perfect absorber of light of ultra wide band based on refractory material is followed successively by the first metal layer from the bottom to top
1, dielectric layer 2, second metal layer 3, the first dielectric grating layer 4, metal grating layer 5 and the second dielectric grating layer 6.Institute
It states the first metal layer 1, the dielectric layer 2 and the second metal layer 3 and constitutes packed structures；The first dielectric grating
Layer 4, the metal grating layer 5 and the second dielectric grating layer 6 constitute optical grating construction.The grating of the optical grating construction is narrow
Slit width degree L is 20-220nm.The screen periods P of the optical grating construction is 200-410nm.
The material of the first metal layer 1, the second metal layer 3 and the metal grating layer 5 is the fire resistings such as titanium, chromium or tungsten
Material.The material of the dielectric layer 2, the first dielectric grating layer 4 and the second dielectric grating layer 6 is dioxy
The dielectric materials such as SiClx, aluminium oxide or magnesium fluoride.The thickness of the first metal layer 1 is greater than or equal to 150nm, second gold medal
Belong to layer 3 and the metal grating layer 5 with a thickness of 10-60nm.The dielectric layer 2, the first dielectric grating layer 4 and
The second dielectric grating layer 6 with a thickness of 60-220nm.
As shown in Fig. 2, manufacturing step includes: 1) to be sequentially depositing the first metal on the quartz wafer of polishing using magnetic control sputtering device
Layer 1, dielectric layer 2 and second metal layer 3；2) layer photoresist is uniformly coated in the second metal layer 3；3) it uses
The method of electron beam lithography prepares one-dimensional photoresist fringe period structure in the second metal layer 3；4) magnetron sputtering is used
Instrument is sequentially depositing the first dielectric grating layer 4, metal grating layer 5 and second in the one-dimensional photoresist fringe period structure
Dielectric grating layer 6；5) remove the electricity on the one-dimensional photoresist fringe period structure striped using the method for Lift-off to be situated between
Matter layer and metal layer retain dielectric layer and metal layer between the one-dimensional photoresist fringe period structure striped；6) it uses
It goes glue to remove the one-dimensional photoresist fringe period structure in second metal layer 3, it is close to obtain the ultra wide band based on refractory material
Perfect absorber of light.
Embodiment one:
Metal material all select titaniums, the first metal layer 1 with a thickness of 200nm, other metal layer thickness are all 20nm, dielectric
Material selection aluminium oxide, with a thickness of 120nm.The period of optical grating construction is 260nm, slit width 40nm.Fig. 3 is implemented thus
The abosrption spectrogram of the closely perfect absorber of light of ultra wide band under example.From figure 3, it can be seen that in the wave-length coverage of 570-3529nm
Interior, the absorptivity of light is up to 90% or more, i.e., realizes nearly perfect light absorption, and entire band in the range that bandwidth is 2959nm
Average light absorption rate in wide scope is up to 97%.
Embodiment two:
Metal material all select titaniums, the first metal layer 1 with a thickness of 200nm, other metal layer thickness are all 20nm, dielectric
Material selection aluminium oxide, with a thickness of 120nm.The period of optical grating construction is 290nm, slit width 40nm.Fig. 4 is implemented thus
The abosrption spectrogram of the closely perfect absorber of light of ultra wide band under example.From fig. 5, it can be seen that in the wave-length coverage of 580-3715nm
Absorptivity reach 90% or more, i.e., realize nearly perfect light absorption in the range that bandwidth is 3135nm, and average light is inhaled
Yield has reached 96.4%.
Embodiment three:
Metal material all selects titanium, and for the first metal layer 1 with a thickness of 200nm, other metal layer thickness are all 20nm, dielectric material
Material selects aluminium oxide, with a thickness of 120nm.The period of optical grating construction is 290nm, slit width 100nm.Fig. 5 is implemented thus
The abosrption spectrogram of the closely perfect absorber of light of ultra wide band under example.From fig. 5, it can be seen that the light in 525-2900nm wave-length coverage
Absorptivity reaches 90% or more, i.e., realizes nearly perfect light absorption, and average light absorption rate in the range that bandwidth is 2375nm
Up to 98.4%.
Example IV:
Metal material all select titaniums, the first metal layer 1 with a thickness of 200nm, other metal layer thickness are all 40nm, dielectric
Material selection aluminium oxide, with a thickness of 120nm.The period of optical grating construction is 260nm, slit width 40nm.Fig. 6 is implemented thus
The abosrption spectrogram of the closely perfect absorber of light of ultra wide band under example.From fig. 6, it can be seen that the light in 668-3680nm wave-length coverage
Absorptivity reaches 90% or more, i.e., realizes nearly perfect light absorption, and average light absorption rate in the range that bandwidth is 3012nm
Reach 94.38%.
Embodiment five:
Metal material all select titaniums, the first metal layer 1 with a thickness of 200nm, other metal layer thickness are all 20nm, dielectric
Material selection aluminium oxide, with a thickness of 140nm.The period of optical grating construction is 260nm, slit width 40nm.Fig. 7 condition thus
Under the closely perfect absorber of light of ultra wide band abosrption spectrogram.From figure 7 it can be seen that in 629-3870nm wave-length coverage, light
Absorptivity reaches 90% or more, i.e., realizes nearly perfect light absorption, and average light absorption rate in the range that bandwidth is 3241nm
Reach 97.87%.
Embodiment six:
3 the selection of material titanium of the first metal layer 1 and second metal layer, 5 the selection of material tungsten of metal grating layer, the first metal layer 1 are thick
Degree is 200nm, second metal layer 3, metal grating layer 5 thickness be 20nm, dielectric substance selects aluminium oxide, and thickness is
120nm.Grating structure period is 290nm, slit width 100nm.The closely perfect absorber of light of ultra wide band of Fig. 8 embodiment thus
Abosrption spectrogram.As can be seen from Figure 8, in 550-2850nm wave-length coverage, absorptivity is greater than 90%, i.e., in bandwidth
Nearly perfect light absorption is realized for the range of 2300nm wide, and average light absorption rate reaches 97.86%.It can significantly see simultaneously
Out, absorptivity nearly reaches 100% in 1000-1500nm, 2000-2500nm wave-length coverage.
The specific embodiment provided according to the present invention, the invention discloses following technical effects:
1) in the present invention, by greatly extending the wave-length coverage of light absorption for multi-layer grating (IMI) and MIM integration,
In the wave-length coverage of 570-3529nm, the nearly perfect light absorption for absorbing and being greater than that 90%, bandwidth is 2959nm is obtained, and average
Absorptivity reaches 97%, much larger than existing studies have reported that the Absorber Bandwidth that middle other structures are shown；
2) titanium, the tungsten used in this structure belongs to metal material resistant to high temperature, the melting temperature of tungsten and aluminium oxide be not 3422
With 2072 DEG C, the melting temperature of chromium is more than 1900 DEG C, much higher than golden (1064 DEG C), silver-colored (962 DEG C) and copper (1083 DEG C)；Therefore it uses
The perfect absorber of light that the refractory materials such as titanium, chromium, tungsten are constituted has the loss of lower metal ohmic, better fuel factor and heat
Stability；
3) it can realize that the closely perfect light of ultra wide band is inhaled in visible-middle infrared band by adjustment structure size and optimization material parameter
It receives；Photoelectric device in high temperature resistant, high fever includes infrared acquisition and photoelectric conversion, infrared imaging, solar photovoltaic
The fields such as pond device and heat radiator are all with a wide range of applications；Structure is simple, easily manufactured, at low cost.
Each embodiment in this specification is described in a progressive manner, and the highlights of each of the examples are implement with other
The difference of example, the same or similar parts in each embodiment may refer to each other.
Used herein a specific example illustrates the principle and implementation of the invention, and the explanation of above embodiments is only
It is to be used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, according to this hair
Bright thought, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification should not manage
Solution is limitation of the present invention.
Claims (8)
1. a kind of closely perfect absorber of light of ultra wide band based on refractory material, which is characterized in that the closely perfect absorber of light of ultra wide band
Be followed successively by from the bottom to top the first metal layer, dielectric layer, second metal layer, the first dielectric grating layer, metal grating layer and
Second dielectric grating layer；The first metal layer, the dielectric layer and the second metal layer constitute packed structures；Institute
It states the first dielectric grating layer, the metal grating layer and the second dielectric grating layer and constitutes optical grating construction.
2. the closely perfect absorber of light of the ultra wide band according to claim 1 based on refractory material, which is characterized in that described the
The material of one metal layer, the second metal layer and the metal grating layer is refractory material.
3. the closely perfect absorber of light of the ultra wide band according to claim 1 based on refractory material, which is characterized in that described the
The thickness of one metal layer is greater than or equal to 150nm, and the second metal layer and the metal grating layer are with a thickness of 10-60nm.
4. the closely perfect absorber of light of the ultra wide band according to claim 1 based on refractory material, which is characterized in that the electricity
The material of dielectric layer, the first dielectric grating layer and the second dielectric grating layer is dielectric material.
5. the closely perfect absorber of light of the ultra wide band according to claim 1 based on refractory material, which is characterized in that the electricity
Dielectric layer, the first dielectric grating layer and the second dielectric grating layer with a thickness of 60-220nm.
6. the closely perfect absorber of light of the ultra wide band according to claim 1 based on refractory material, which is characterized in that the light
The grating slit width of grid structure is 20-220nm.
7. the closely perfect absorber of light of the ultra wide band according to claim 1 based on refractory material, which is characterized in that the light
The screen periods of grid structure are 200-410nm.
8. the closely perfect absorber of light of the ultra wide band according to claim 1 based on refractory material, which is characterized in that the base
Include: in the production method of the closely perfect absorber of light of the ultra wide band of refractory material
The first metal layer, dielectric layer and the second metal are sequentially depositing on the quartz wafer of polishing using magnetic control sputtering device
Layer；
A layer photoresist is uniformly coated in the second metal layer；
One-dimensional photoresist fringe period structure is prepared in the second metal layer using the method for electron beam lithography；
First dielectric grating layer, metal are sequentially depositing in the one-dimensional photoresist fringe period structure using magnetic control sputtering device
Grating layer and the second dielectric grating layer；
Dielectric layer and metal layer on the one-dimensional photoresist fringe period structure striped is removed using the method for Lift-off,
Retain the dielectric layer and metal layer between the one-dimensional photoresist fringe period structure striped；
Using going glue to remove the one-dimensional photoresist fringe period structure in second metal layer, complete the production.
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