CN110133771B - Method for realizing ultra-narrow band absorption and sensing by using structural symmetry defects - Google Patents
Method for realizing ultra-narrow band absorption and sensing by using structural symmetry defects Download PDFInfo
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Abstract
The invention discloses a method for realizing ultra-narrow-band absorption and sensing by using structural symmetry defects, belonging to the field of micro-electro-mechanical systems and photoelectric detection. The grating structure of the invention is composed of a metal substrate, a medium buffer layer with low refractive index and a medium grating layer with high refractive index, wherein a nanometer groove is introduced into the grating layer, the symmetry of the grating structure is changed by changing the position of the nanometer groove, the high local area and the obvious enhancement of an optical field in the nanometer groove are realized by utilizing the symmetry break of the grating structure, and further, the ultra-narrow band selective perfect absorption of incident light waves is realized. In addition, because the electric field energy is highly localized in the nanometer groove of the symmetry-breaking grating, the tiny change of the background refractive index can cause the obvious movement of the absorption peak, and the method can realize the high-sensitivity refractive index sensing function at the same time, and has application value in the fields of light absorption devices, enhanced nanometer imaging, stealth materials, photoelectric detection, biological sensing and the like.
Description
Technical Field
The invention relates to a method for realizing ultra-narrow-band absorption and sensing by using structural symmetry defects, belonging to the field of micro-electro-mechanical systems and photoelectric detection.
Background
The optical selective perfect absorber can efficiently absorb electromagnetic waves of a specific frequency band, realizes perfect absorption of specific channel light wave energy, and has important application requirements in the fields of photoelectric detection, optical sensing, imaging systems, intelligent communication, photovoltaic solar energy and the like. For micro-nano optical devices, in order to obtain a good light absorption effect, the interaction between incident light waves and micro-nano structures is often required to be improved, and the light absorption efficiency of the devices is improved by utilizing the electric field enhancement of the micro-nano structures. In previous research and application, in order to improve the light absorption efficiency of a micro-nano optical device, the resonance effect of a micro-nano composite structure needs to be used, and the following four methods are mainly adopted: the first method is to utilize Surface plasmon resonance (Surface plasmon resonance) to realize the enhancement of light absorption efficiency by introducing a micro-nano structure into a metal-medium composite structure, for example, utilizing a grating, a coupling prism or scattering particles to provide wave vector momentum matching and exciting a Surface plasmon resonance mode at a metal-medium interface; the second method is to utilize Guided-mode resonance (Guided-mode resonance) to realize the high local area of the optical field energy in the medium waveguide layer by exciting the resonant waveguide mode in the microstructure, and further realize the absorption enhancement of the incident light wave; the third method is to utilize magnetic resonance to realize the high local area of magnetic field energy in the dielectric layer by exciting the magnetic resonance (magnetic resonance) in a metal-medium-metal sandwich structure, namely forming antisymmetric current distribution in the upper and lower metal layers, thereby improving the light absorption efficiency of the device; the fourth method is to utilize Fano resonance (Fano resonance) to form the localization of light field energy and the enhancement of light absorption efficiency at resonance wavelength by regulating and controlling the coupling of bright mode and dark mode in the micro-nano structure.
However, the conventional method for enhancing light absorption by surface plasmon resonance, guided mode resonance, magnetic resonance, fanno resonance, and the like rarely relates to how to enhance light absorption efficiency by using symmetry defects of a micro-nano structure, and particularly how to achieve perfect light absorption of an ultra-narrow band. Although researches in recent years find that the symmetry of the micro-structure can be used for realizing new optical phenomena and device functions, such as Fano resonance, electromagnetic induction transparency, narrow-band filtering, surface plasmon resonance enhancement and the like, the symmetry of the micro-nano structure can be used for realizing the resonance, reflection, transmission or filtering characteristics of the micro-nano structure, and the method does not relate to the application of realizing the perfect light absorption and high-performance sensing of an ultra-narrow band by using the symmetry of the micro-structure.
Disclosure of Invention
The invention provides a method for realizing perfect light absorption and high-sensitivity sensing by utilizing structural symmetry defects. The method specifically relates to the introduction of a nano groove in a medium grating with a metal substrate, changes the symmetry of a grating structure by changing the position of the nano groove, realizes ultra-narrow band light absorption and high-sensitivity refractive index sensing by using the lack of the symmetry of the grating structure, and has application value in the fields of light absorption devices, enhanced nano imaging, stealth materials, photoelectric detection, biological sensing and the like.
A first object of the present invention is to provide a method for ultra-narrow band perfect light absorption and high sensitivity sensing, which is implemented by exploiting the lack of symmetry of the grating structure.
In one embodiment of the present invention, the grating structure includes a metal substrate, a low refractive index dielectric buffer layer, and a high refractive index dielectric grating layer, and the grating is a sub-wavelength structure; and asymmetric nanometer grooves are introduced into the grating layer, namely the distance between the center of each nanometer groove and the center of each grating primitive cell is not equal to 0.
In one embodiment of the present invention, the low refractive index medium buffer layer means that the medium refractive index of the buffer layer is smaller than the medium refractive index of the grating layer; the medium grating layer with high refractive index means that the refractive index of the medium of the grating layer is larger than that of the medium of the buffer layer.
In one embodiment of the present invention, the material of the metal substrate is Au or Ag.
In one embodiment of the invention, the low refractive index dielectric buffer layer and the high refractive index dielectric grating layer are respectively made of SiO materials2And Si.
In one embodiment of the present invention, the metal Ag thin film and SiO2The film and the Si film are prepared by adopting a conventional coating mode, including but not limited to an electron beam evaporation coating mode or a magnetron sputtering coating mode.
In an embodiment of the present invention, the method for manufacturing the grating structure specifically includes: firstly, 100nm thick Ag film is deposited on a high-precision optical substrate such as fused quartz or K9 glass, and SiO is sequentially deposited on the substrate2A thin film and a Si thin film; and finally, preparing a grating microstructure with a nano groove in the top layer Si film.
In one embodiment of the present invention, the grating microstructure is prepared by dry etching, including but not limited to: and transferring the pattern of the mask into the Si thin film structure by using a plasma etching device or an electron beam etching device.
The second purpose of the invention is to provide a grating structure which can perfectly absorb ultra-narrow band selectivity, comprising a metal substrate, a medium buffer layer with low refractive index and a medium grating layer with high refractive index, wherein a nano-groove is introduced into the grating layer, and the distance from the center of the nano-groove to the center of a grating primitive cell is not equal to 0.
The invention also claims the application of the grating structure in the fields of light absorption devices, enhanced nano imaging, stealth materials, photoelectric detection, biosensing and the like. Compared with a photoelectric detector based on a semiconductor material, the electromagnetic wave sensitive wavelength of the structure is determined by the array form and the unit structure size of the semiconductor material instead of the forbidden bandwidth of the semiconductor material, and the selective absorption enhancement of light waves with different wavelengths can be realized by reasonably selecting microstructure parameters such as grating period, duty ratio, width and position of nano-grooves and the like. On the basis, based on the selective perfect light absorption enhancement of the incident light wave, the intensity of the light absorption signal of the specific channel is effectively enhanced and regulated, the responsivity to the light signal detection is improved, and the potential application of the micro-nano photonic device in the aspects of photoelectric detection, sensing and the like is further expanded.
In one embodiment of the invention, the application includes the preparation of photocouplers, photodetectors and the like.
Has the advantages that: according to the invention, the symmetry of the grating structure is changed by changing the position of the nano groove, the high local area and the obvious enhancement of the light field in the nano groove are realized by utilizing the symmetry break of the grating structure, the absorption peak position is highly sensitive to the change of the background refractive index, and the ultra-narrow band selective perfect absorption and the high-sensitivity refractive index sensing are further realized on the incident light wave.
Drawings
FIG. 1 is a schematic view of the structure of the present invention.
Fig. 2 shows the absorption spectra of the inventive structures in the case of symmetry (ds ≠ 0) and in the case of symmetry loss (ds ≠ 0).
Fig. 3 shows normalized electric field amplitude distribution of the resonant wavelength of the structure of the present invention under the symmetric condition (ds ≠ 0) and the symmetry-lacking condition (ds ≠ 0).
Fig. 4 is an absorption spectrum curve of the inventive structure with a change in the nano-groove position ds.
Fig. 5 is an absorption spectrum curve of the structure of the present invention when the width w of the nano-groove is changed.
FIG. 6 is an absorption spectrum plot of the inventive structure with varying background refractive index n.
FIG. 7 is a graph of absorption peak position as a function of background refractive index for different analytes for structures of the present invention.
Detailed Description
The method for realizing ultra-narrow-band absorption and high-sensitivity sensing by using structural symmetry defects comprises the following steps:
example 1
In the invention, metal and dielectric film materials can be selected at will to realize the ultra-narrow band perfect light absorption with broken symmetry, and on the basis, the high sensitivity of the absorption peak position to the change of the background refractive index is utilized to realize the high-sensitivity refractive index sensing. Firstly, a nano notch is introduced into a grating structure with a metal substrate, the distance between the center of the nano notch and the center of a grating primitive cell is not equal to 0, so that the grating structure generates symmetrical defects, the symmetrical defects of the grating structure are utilized, the high local area and the obvious enhancement of an optical field in the nano notch are realized, and further ultra-narrow band light absorption and high sensitivity sensing are obtained.
Fig. 1 is a schematic diagram of a two-dimensional grating structure with a metal substrate and nano-grooves. The substrate is metal and has a refractive index ns. Above the substrate is a layer with a thickness tbLow refractive index dielectric buffer layer of (1), refractive index nb. A two-dimensional grating layer with high refractive index n is arranged above the buffer layeraDepth of ta. The period of the grating along the x direction and the y direction is respectively lambdaxAnd ΛyThe duty ratio in the x direction and the y direction is F. The width of the nanometer groove is w, and the distance from the center of the nanometer groove to the center of the two-dimensional grating primitive cell is dsWhen d issAnd when the signal is not equal to 0, the symmetry of the corresponding grating structure is broken.
Assuming that the selected wave band is near infrared wave band, the substrate, the buffer layer and the grating are respectively selected from Ag and SiO2And Si, with air as background. The thickness of the Ag substrate is larger than the skin depth of a corresponding light wave band (the skin depth of the Ag substrate in a visible light near-infrared band is 20-50nm), so that the reduction of absorption efficiency caused by transmitted light can be avoided; SiO 22The medium buffer layer with low refractive index can separate the Ag substrate from the Si grating for a certain distance to realize better absorption enhancement effect, and the thickness of the medium buffer layer in a visible light near-infrared band is generally higher than 100 nm; the Si grating can generate optical field local to the optical wave with specific wavelength, and further realize the absorption enhancement of the optical wave with the wavelength, generally speaking, the larger the depth of the Si grating is, the larger the wavelength of the corresponding enhanced absorption peak is. In order to improve the light absorption efficiency, the grating adopts a sub-wavelength structure, namely the grating period is less than the wavelength of incident light, and only 0-order transmission diffraction order in the air background at the moment can avoid the reduction of the light absorption efficiency caused by the diffraction of the high-order. Assuming that the thickness of the Ag substrate is 100nm, since the thickness is far greater than the skin depth of the near infrared band Ag, no light is transmitted in the substrate, and the light absorption rate of the structure can be simplified to be A-1-R, wherein R is the reflectivity of the structure. Refractive index of Ag was taken from the Palik database, SiO2Refractive index n ofb1.47, thickness tb200 nm; refractive index n of Sia3.48, Si Grating depth ta480nm, SiO2Thickness of buffer layer, Λx＝Λy＝780nm，FΛx＝FΛy＝400nm。
Under the above parameter conditions, for the TE polarized light vertically incident from above the grating (the electric field direction is along the y direction), the absorption spectrum of the corresponding grating structure in the sub-wavelength band is calculated by using the vector diffraction theory, such as the strict coupled wave theory. Respectively for symmetrical structures (d)s0) and a symmetrical broken structure (d)sNot equal to 0) selecting parameters for calculation, such as a symmetrical structure grating, wherein the parameters are as follows: d s0, w is 0 (symmetrical and without nano-grooves), d s0, w is 20nm (symmetrical and nano-engraved); the symmetry broken grating has the parameters as follows: dsThe calculated absorption spectrum is shown in fig. 2, with 20nm and w 20 nm. It can be seen that, for the case of a symmetrical structure, whether the nano-grooves exist in the grating or not, the light absorption rate of the structure is very small, and the whole structure has a broadband high reflection function; however, the symmetry of the grating structure is broken, which causes ultra-narrow-band light absorption effect, the light absorption rate is close to 100% at the resonance wavelength of 1455.8nm, and the absorption band isThe full width at half maximum (FWHM) is only 0.2nm, the quality (Q) factor is as high as 7279, and the structure presents excellent ultra-narrow band selective perfect absorption characteristics.
Example 2
In order to reveal the physical mechanism corresponding to the ultra-narrow band light absorption of the symmetrical defect structure, the symmetrical situation (d) is respectively calculated by adopting the strict coupled wave theorys0) and symmetry-breaking case (d)sNot equal to 0), the electric field distribution of the grating structure at the resonance absorption wavelength of 1455.8nm, resulting in fig. 3.
FIG. 3 shows the structure of the present invention in a symmetrical condition (d)s0) and symmetry-breaking case (d)sNot equal to 0), the normalized electric field amplitude distribution of 1455.8nm absorption peak light waves on the xoy plane. As can be seen from FIG. 3, for a symmetrical structure the grating, i.e. d s0, w is 0 (symmetrical and without nano-grooves), and dsAnd w is 20nm (symmetrical and nano-grooved), and no matter whether the nano-grooved exists in the grating, due to the local effect of the high-refractive-index grating on the optical field, the electric field in the structure is enhanced to a certain extent, but the enhancement effect is not significant, and the energy of the optical field is mainly bound in the high-refractive-index Si grating, so that the Mieresonance (Mieresonance) resonance characteristic is presented. But for a symmetrical broken structure, i.e. dsBecause a cuboid unit in the Si grating primitive cell is split into two asymmetric dimers, the electromagnetic coupling between the two asymmetric dimers obviously enhances the optical field amplitude of the structure, a cavity resonance pattern is generated in the nanometer groove, almost all the energy of the optical field is transferred into the nanometer groove, the normalized amplitude of the electric field intensity is sharply enhanced, and the maximum light intensity is increased by 2.25 multiplied by 104Multiple, perfect light absorption with absorption efficiency approaching 100% at resonant wavelengths is achieved.
Example 3
For a symmetrical grating structure (d)sNot equal to 0), under the condition that the groove width w is equal to 20nm, selecting different groove positions dsE.g. dsRespectively take ds＝20nm、ds＝30nm、ds＝40nm、ds＝50nm、dsD can be calculated using vector diffraction theory at 60nmsAbsorption spectrum profile of the structure as it changes;
as can be seen from FIG. 4, when dsWhen the wavelength of the ultra-narrow band absorption peak is remarkably red-shifted from 20nm to 60nm, the wavelength of the absorption peak is shifted from 1455.8nm to 1498.1nm, namely, the asymmetry of the grating structure is increased (namely, the d is increased)s) The narrow-band absorption peak moves towards the long-wave direction, but the corresponding low absorption side band is kept unchanged, and the structure still keeps excellent ultra-narrow-band selective absorption characteristics.
Example 4
In the absence of symmetry (d)sNot equal to 0), for the groove position dsIn the case of 20nm, different groove widths w are selected, for example, w is 10nm, w is 15nm, w is 20nm, w is 25nm, and w is 30nm, and the absorption spectrum curve of the structure when w changes can be calculated by using the vector diffraction theory,
as can be seen from FIG. 5, when the width of the nano-groove is greatly changed, i.e. w is increased from 10nm to 30nm, the structure still has excellent ultra-narrow band, low side band and selective absorption characteristics, and the light absorption efficiency is higher than 90%. In addition, the absorption peak is blue-shifted with increasing w, because increasing the width of the nano-grooves reduces the equivalent refractive index of the grating layer.
Example 5
In the absence of symmetry (d)sNot equal to 0), one symmetry-breaking grating structure is arbitrarily chosen, for example d is chosens20nm, w 20nm for different background refractive indices n. For example, n is 1.00, n is 1.01, n is 1.02, n is 1.03, and n is 1.04, and absorption spectra corresponding to different background refractive index change structures are calculated to obtain fig. 6.
As can be seen from fig. 6, when the background refractive index is slightly changed, the position of the absorption peak is significantly shifted, and the absorption peak position exhibits a highly sensitive spectral response characteristic to the slight change of the background refractive index.
According to the calculation result of fig. 6, data of different absorption peak positions and corresponding background refractive indexes are obtained, and the relation of the absorption peak positions with the change of the background refractive indexes of different analytes is drawn to obtain fig. 7. As can be seen from fig. 7, the position of the absorption peak moves linearly with the change of the background refractive index, and the slope of the straight line obtained by linear fitting corresponds to the sensing sensitivity S of 405 nm/RIU. On the basis of this, the sensed quality factor FoM is calculated as S/FWHM, where FWHM is the full width at half maximum of the absorption peak, resulting in FoM 2025. It can be seen that the symmetry-broken grating combines extremely high sensing sensitivity (S ═ 405nm/RIU) and quality factor (FoM ═ 2025), and exhibits an excellent refractive index sensing function.
Although the present invention has been described with reference to the preferred embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (14)
1. A method for realizing beautiful light absorption and high-sensitivity sensing in an ultra-narrow band is characterized in that a nano notch is introduced into a grating structure with a metal substrate based on a symmetrical broken grating structure, and the grating structure is symmetrically broken by enabling the distance from the center of the nano notch to the center of a grating primitive cell to be not equal to 0; the grating structure comprises a medium buffer layer with low refractive index and a medium grating layer with high refractive index; the medium buffer layer with low refractive index refers to that the medium refractive index of the buffer layer is smaller than that of the grating layer; the medium grating layer with high refractive index means that the refractive index of the medium of the grating layer is larger than that of the medium of the buffer layer.
2. The method of claim 1, wherein the grating structure comprises a metal substrate, a low refractive index dielectric buffer layer, a high refractive index dielectric grating layer; the grating is of a sub-wavelength structure, and asymmetric nanometer grooves are introduced; the asymmetry means that the distance from the center of the nanometer groove to the center of the grating primitive cell is not equal to 0.
3. A method according to claim 1 or 2, wherein the incident light waves to which the method is applied comprise TE polarized light waves or TM polarized light waves.
4. A grating structure is characterized by comprising a metal substrate, a buffer layer and a grating layer, wherein asymmetric nanometer grooves are introduced into the grating layer; the asymmetry refers to that the distance from the center of the nanometer groove to the center of the grating primitive cell is not equal to 0; the medium refractive index of the buffer layer is smaller than that of the grating layer.
5. The grating structure of claim 4 wherein the buffer layer is SiO2The grating layer is made of Si; the metal substrate is Au or Ag.
6. The grating structure of claim 4 or 5, wherein the buffer layer is SiO prepared by conventional coating method2A film; the grating layer is a Si film prepared by adopting a conventional film coating mode; the metal substrate is an Ag film prepared by adopting a conventional film coating mode.
7. The grating structure of claim 6 wherein the coating comprises electron beam evaporation coating or magnetron sputtering coating.
8. A method of producing a grating structure according to claim 5 or 7, characterized in that a thin Ag film is deposited on a high-precision optical substrate, on the basis of which SiO is deposited in turn2A thin film and a Si thin film; finally, preparing a grating microstructure with a nanometer groove in the top layer Si film; the optical substrate is fused quartz, a silicon wafer or K9 glass.
9. A method of preparing a grating structure according to claim 6, characterized in that a thin film of Ag is deposited on a high precision optical substrate, on the basis of which SiO is deposited in turn2A thin film and a Si thin film; finally, preparing a grating microstructure with a nanometer groove in the top layer Si film; the optical substrate is fused quartz, a silicon wafer or K9 glass.
10. The method of claim 8, wherein the grating microstructure is prepared by dry etching.
11. The method of claim 9, wherein the grating microstructure is prepared by dry etching.
12. The method according to claim 10 or 11, wherein the dry etching is a transfer of a pattern of a mask into the Si thin film structure using a plasma etching apparatus or an electron beam etching apparatus.
13. Use of a grating structure according to any one of claims 4, 5 or 7 in the fields of light absorbing devices, stealth materials, photodetection, biosensing or nanoimaging.
14. Use of the grating structure of claim 6 in the fields of light absorbing devices, stealth materials, photodetection, biosensing or nanoimaging.
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| CN110703371B (en) * | 2019-10-14 | 2022-08-26 | 江西师范大学 | Semiconductor super-surface electromagnetic wave absorber and preparation method thereof |
| CN111308587B (en) * | 2020-03-02 | 2022-06-28 | 江西师范大学 | Tunable multi-band ultra-narrow band electromagnetic wave absorber |
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| CN111580268B (en) * | 2020-05-29 | 2021-10-15 | 上海交通大学 | Selective absorption/emission device construction method and system suitable for any wavelength |
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