CN108414115B - Tunable surface plasma waveguide with temperature sensing function - Google Patents
Tunable surface plasma waveguide with temperature sensing function Download PDFInfo
- Publication number
- CN108414115B CN108414115B CN201810261653.3A CN201810261653A CN108414115B CN 108414115 B CN108414115 B CN 108414115B CN 201810261653 A CN201810261653 A CN 201810261653A CN 108414115 B CN108414115 B CN 108414115B
- Authority
- CN
- China
- Prior art keywords
- metal
- waveguide
- temperature sensing
- layer
- graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002184 metal Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 24
- 230000000694 effects Effects 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/32—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in transmittance, scattering or luminescence in optical fibres
- G01K11/3206—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in transmittance, scattering or luminescence in optical fibres at discrete locations in the fibre, e.g. using Bragg scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12138—Sensor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a tunable surface plasma waveguide with temperature sensing, which is characterized by comprising a silicon substrate layer, an InGaAsP semiconductor buffer layer and a duty ratio of 10, wherein the silicon substrate layer, the InGaAsP semiconductor buffer layer and the duty ratio are sequentially spliced from bottom to top: the metal layer of the metal grating is formed by tightly connecting metal Ag and graphene, wherein the length and the thickness of the metal layer are the same, the width ratio is 2 to 1, the metal Ag is positioned at the left half part of the metal layer, the graphene is positioned at the right half part of the metal layer, and the grating air gap of the metal grating is filled with temperature sensing medium ethanol. The waveguide can change the resonance wavelength and the threshold value of the SPP nano laser by controlling the ambient temperature or can obtain the variation of the ambient temperature by detecting the variation of the resonance wavelength of the SPP nano waveguide device, and the waveguide has the capability of tunable emergent wavelength and high sensitivity to the variation of the ambient temperature.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to a tunable surface plasma waveguide with temperature sensing.
Background
The surface plasmon (Surface plasmon polariton, SPP for short) is an electromagnetic mode between a light wave and a movable surface charge, which is realized by changing a sub-wavelength structure of a metal surface, and can support the surface plasmon wave transmitted by a metal-medium interface, so that light energy is transmitted, and the light energy is not limited by diffraction limit, and the SPP plays an important role in manipulating the light energy in nanometer level because of the unique property. The combination of the Zhejiang university and the Alfen laboratory subject of the Royal college of Swedish provides a metal groove SPP waveguide in the text Novel surface plasmon waveguide for high integrations, and the designed waveguide structure can realize the optical field limitation of sub-wavelength magnitude, the loss is only 4dB/um, however, although researchers realize the limitation of the optical field to the magnitude of tens of nanometers, the loss of the designed waveguide device is still very large, and the requirement of large-scale application cannot be met. In 2018, the publication of "Broadband gate-tunable terahertz plasmons in graphene heterostructures" of Nature and Photonic science shows that a double-layer graphene heterostructure is designed and prepared on a silicon carbide waveguide and full light control is realized on a graphene surface plasmon polariton, however, the research of graphene SPP is limited to the waveguide and lacks research on temperature sensing at present, and the requirements of practical application are not met. The natural communication is published in 2013 under the heading of Plasmonic gold mushroom arrays with refractive index sensing figures of merit approaching the theoretical limit, and the sensitivity of the sensor device proposed by the research team can reach 1050nmRIU-1, however, although the high sensitivity is realized by researchers, the structure is large in size, not easy to integrate, and cannot realize photoelectric integration and all-optical loop.
Most of the current research on SPP waveguides or plasmon sensors is focused on one, and few reports on realizing small-sized sensors in combination with SPP waveguides are made.
Disclosure of Invention
It is an object of the present invention to address the deficiencies of the prior art by providing a tunable surface plasmon waveguide with temperature sensing. The waveguide can change the resonance wavelength and the threshold value of the SPP nano laser by controlling the ambient temperature or can obtain the variation of the ambient temperature by detecting the variation of the resonance wavelength of the SPP nano waveguide device, and the waveguide has the capability of tunable emergent wavelength and high sensitivity to the variation of the ambient temperature.
The technical scheme for realizing the aim of the invention is as follows:
unlike the prior art, the tunable surface plasma waveguide with temperature sensing comprises a silicon substrate layer, an InGaAsP semiconductor buffer layer and a duty cycle of 10, which are sequentially spliced from bottom to top: the metal layer of the metal grating is formed by tightly connecting metal Ag and graphene, wherein the length and the thickness of the metal layer are the same, the width ratio is 2 to 1, the metal Ag is positioned at the left half part of the metal layer, the graphene is positioned at the right half part of the metal layer, a grating air gap of the metal grating is filled with temperature sensing medium ethanol, the plasma waveguide structure can form a high-strength LSPR effect at the corners of a single-layer graphene layer, and after the ethanol senses the environmental temperature, the equivalent effective refractive index of the whole plasma waveguide is changed, the resonance wavelength is changed, and temperature sensing is realized by detecting the change of a resonance peak.
The InGaAsP semiconductor is a high-refractive-index medium InGaAsP.
The plasma waveguide is used for realizing the application of the tunable surface plasma waveguide with temperature sensing as an SPP nano waveguide device with tunable emergent wavelength in a sub-wavelength scale device by changing the Fermi level and the carrier concentration of graphene.
The preparation method of the tunable surface plasma waveguide with temperature sensing comprises the following steps: firstly, depositing an InGaAsP semiconductor buffer layer on a silicon substrate, then etching a metal grating structure formed by metal Ag and graphene on the InGaAsP semiconductor buffer layer, and then filling temperature sensing medium ethanol in a grating air gap of the metal grating.
Incident light vertically enters the plasma waveguide from the upper part, surface plasma resonance phenomenon occurs at the interface of the Ag and InGaAsP semiconductor buffer layer due to the scattering effect of the plasma waveguide structure, meanwhile, the surface plasma resonance phenomenon is also realized at the interface of the temperature sensing medium ethanol and the graphene, the 2 types of resonance are coupled and finally converged to the corners of the graphene to form a high-strength LSPR effect, and the equivalent effective refractive index of the whole plasma waveguide is changed after the ethanol senses the environmental temperature, so that the resonance wavelength is changed, and temperature sensing is realized by detecting the change of the resonance peak.
The tunable graphene SPP waveguide sensor with the temperature sensing characteristic can be used as an SPP waveguide device with tunable emergent wavelength in a sub-wavelength scale device, can be used for high-sensitivity temperature detection, can realize a waveguide device with tunable threshold value by adjusting the Fermi level, carrier concentration and environmental temperature of graphene, and can be used for a high-sensitivity temperature sensor by detecting the change of resonant wavelength in reverse.
The waveguide structure can provide stronger localization constraint, and provides basic unit devices for the surface plasma excitation circuit, so that the applications of larger bandwidth, ultra-fast data transmission and ultra-sensitive temperature detection are realized.
The waveguide can change the resonance wavelength and the threshold value of the SPP nano laser by controlling the ambient temperature or can obtain the variation of the ambient temperature by detecting the variation of the resonance wavelength of the SPP nano waveguide device, and the waveguide has the capability of tunable emergent wavelength and high sensitivity to the variation of the ambient temperature.
Drawings
FIG. 1 is a schematic diagram of an embodiment;
in the figure, 1. Silicon substrate layer 2.InGaAsP layer 3.Ag 4. Graphene 5. Ethanol.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and examples, which are not intended to limit the scope of the invention.
Examples:
referring to fig. 1, a tunable surface plasmon waveguide with temperature sensing comprises a silicon substrate layer 1, an InGaAsP semiconductor buffer layer 2, and a duty cycle of 10, which are sequentially stacked from bottom to top: the metal layer of the metal grating is formed by tightly connecting metal Ag3 and graphene 4, wherein the length and the thickness of the metal layer are the same, the width ratio is 2 to 1, the metal Ag3 is positioned at the left half part of the metal layer, the graphene 4 is positioned at the right half part of the metal layer, a grating air gap of the metal grating is filled with temperature sensing medium ethanol 5, the plasma waveguide structure can form a high-strength LSPR effect at the corner of the single-layer graphene layer 4, and after the ethanol 5 senses the environmental temperature, the equivalent effective refractive index of the whole plasma waveguide is changed, so that the resonance wavelength is changed, and temperature sensing is realized by detecting the change of resonance peaks.
The InGaAsP semiconductor is a high-refractive-index medium InGaAsP.
The plasma waveguide is used for realizing the application of the tunable surface plasma waveguide with temperature sensing as an SPP nano waveguide device with tunable emergent wavelength in a sub-wavelength scale device by changing the Fermi level and the carrier concentration of graphene.
The preparation method of the tunable surface plasma waveguide with temperature sensing comprises the following steps: firstly, an InGaAsP semiconductor buffer layer 2 is deposited on a silicon substrate layer 1, then a metal grating structure formed by metal Ag3 and graphene 4 is etched on the InGaAsP semiconductor buffer layer 2, and then a grating air gap of the metal grating is filled with a temperature sensing medium ethanol 5.
Incident light vertically enters the plasma waveguide from the upper part, surface plasma resonance phenomenon occurs at the interface of the Ag3 and InGaAsP semiconductor buffer layer 2 due to the scattering effect of the plasma waveguide structure, meanwhile, the surface plasma resonance phenomenon is also realized at the interface of the temperature sensing medium ethanol 5 and the graphene 4, the 2 types of resonance are coupled, finally, the resonance is converged at the corner of the graphene 4 to form a high-strength LSPR effect, and the equivalent effective refractive index of the whole plasma waveguide is changed after the ethanol 5 senses the environmental temperature, so that the resonance wavelength is changed, and temperature sensing is realized by detecting the change of the resonance peak.
Claims (2)
1. The tunable surface plasma waveguide with the temperature sensing function is characterized by comprising a silicon substrate layer, an InGaAsP semiconductor buffer layer and a duty ratio of 10, wherein the silicon substrate layer, the InGaAsP semiconductor buffer layer and the duty ratio are sequentially spliced from bottom to top: the metal layer of the metal grating of 1, the metal layer of the metal grating is formed by tightly connecting metal Ag and graphene with the same length and thickness and the width ratio of 2 to 1, wherein the metal Ag is positioned at the left half part of the metal layer, the graphene is positioned at the right half part of the metal layer, and the grating air gap of the metal grating is filled with temperature sensing medium ethanol, and the preparation method of the tunable surface plasma waveguide with temperature sensing comprises the following steps: firstly, depositing an InGaAsP semiconductor buffer layer on a silicon substrate, then etching a metal grating structure formed by metal Ag and graphene on the InGaAsP semiconductor buffer layer, and then filling temperature sensing medium ethanol in a grating air gap of the metal grating.
2. The tunable surface plasmon waveguide with temperature sensing according to claim 1, wherein the use of the tunable surface plasmon waveguide with temperature sensing as an exit wavelength tunable SPP nano waveguide device in sub-wavelength scale devices is achieved by changing the fermi level and carrier concentration of graphene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810261653.3A CN108414115B (en) | 2018-03-28 | 2018-03-28 | Tunable surface plasma waveguide with temperature sensing function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810261653.3A CN108414115B (en) | 2018-03-28 | 2018-03-28 | Tunable surface plasma waveguide with temperature sensing function |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108414115A CN108414115A (en) | 2018-08-17 |
| CN108414115B true CN108414115B (en) | 2024-02-27 |
Family
ID=63133875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810261653.3A Active CN108414115B (en) | 2018-03-28 | 2018-03-28 | Tunable surface plasma waveguide with temperature sensing function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108414115B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108957628A (en) * | 2018-09-20 | 2018-12-07 | 广西师范大学 | A kind of mixing plasma waveguide of the long-range coated by dielectric based on molybdenum disulfide |
| CN109115359A (en) * | 2018-09-20 | 2019-01-01 | 广西师范大学 | A kind of temperature sensor based on hybrid plasma waveguide |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5606633A (en) * | 1995-06-26 | 1997-02-25 | American Research Corporation Of Virginia | Chemical detector employing surface plasmon resonance excited using an optical waveguide configured as an asymmetric waveguide coupler |
| CN103335741A (en) * | 2013-06-19 | 2013-10-02 | 暨南大学 | Graphene based optical fiber temperature sensor and manufacturing method thereof |
| WO2014056734A1 (en) * | 2012-10-10 | 2014-04-17 | Eth Zurich | Absorption based guided-mode resonance sensor/switch and method for sensing physical changes in various environments |
| RU140494U1 (en) * | 2013-12-27 | 2014-05-10 | Федеральное государственное бюджетное учреждение науки Казанский физико-технический институт им. Е.К. Завойского Казанского научного центра Российской Академии наук (КФТИ КазНЦ РАН) | DIFFRACTION GRATING |
| US8916825B1 (en) * | 2011-12-01 | 2014-12-23 | Magnolia Optical Technologies, Inc. | Ultraviolet, infrared and terahertz photo/radiation sensors using graphene layers to enhance sensitivity |
| CN104319447A (en) * | 2014-10-21 | 2015-01-28 | 电子科技大学 | Multi-layer coplanar waveguide transmission line based on graphene and preparation method thereof |
| WO2016178981A1 (en) * | 2015-05-01 | 2016-11-10 | The University Of Massachusetts | Distributed fiber sensor |
| CN208043283U (en) * | 2018-03-28 | 2018-11-02 | 广西师范大学 | A kind of tunable surface plasma waveguide having temperature sensing |
-
2018
- 2018-03-28 CN CN201810261653.3A patent/CN108414115B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5606633A (en) * | 1995-06-26 | 1997-02-25 | American Research Corporation Of Virginia | Chemical detector employing surface plasmon resonance excited using an optical waveguide configured as an asymmetric waveguide coupler |
| US8916825B1 (en) * | 2011-12-01 | 2014-12-23 | Magnolia Optical Technologies, Inc. | Ultraviolet, infrared and terahertz photo/radiation sensors using graphene layers to enhance sensitivity |
| WO2014056734A1 (en) * | 2012-10-10 | 2014-04-17 | Eth Zurich | Absorption based guided-mode resonance sensor/switch and method for sensing physical changes in various environments |
| CN103335741A (en) * | 2013-06-19 | 2013-10-02 | 暨南大学 | Graphene based optical fiber temperature sensor and manufacturing method thereof |
| RU140494U1 (en) * | 2013-12-27 | 2014-05-10 | Федеральное государственное бюджетное учреждение науки Казанский физико-технический институт им. Е.К. Завойского Казанского научного центра Российской Академии наук (КФТИ КазНЦ РАН) | DIFFRACTION GRATING |
| CN104319447A (en) * | 2014-10-21 | 2015-01-28 | 电子科技大学 | Multi-layer coplanar waveguide transmission line based on graphene and preparation method thereof |
| WO2016178981A1 (en) * | 2015-05-01 | 2016-11-10 | The University Of Massachusetts | Distributed fiber sensor |
| CN208043283U (en) * | 2018-03-28 | 2018-11-02 | 广西师范大学 | A kind of tunable surface plasma waveguide having temperature sensing |
Non-Patent Citations (4)
| Title |
|---|
| 一种温控的可调表面等离子体光学器件;张兵心;陈淑芬;付雷;邹正峰;孟彦彬;;光学学报(07);全文 * |
| 亚波长金属光栅／电介质／金属混合波导传感结构的研究;陈颖等;《中国激光》;20180131;第45卷(第1期);全文 * |
| 光纤表面等离子体共振传感技术;王文华等;《激光与光电子学进展》;20171231;第54卷(第9期);全文 * |
| 金属膜衬底上亚波长介质光栅结构的特性及传感应用;马伟涛;周骏;黄水平;苑红伟;;中国激光(09);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108414115A (en) | 2018-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11042073B2 (en) | Tunable graphene metamaterials for beam steering and tunable flat lenses | |
| CN110133771B (en) | Method for realizing ultra-narrow band absorption and sensing by using structural symmetry defects | |
| Yang et al. | Ultrahigh-$ Q $ and Low-Mode-Volume Parabolic Radius-Modulated Single Photonic Crystal Slot Nanobeam Cavity for High-Sensitivity Refractive Index Sensing | |
| US9329339B2 (en) | Plasmonic detector and method for manufacturing the same | |
| CN108414115B (en) | Tunable surface plasma waveguide with temperature sensing function | |
| CN208206334U (en) | One kind is by the modified high-sensitivity surface plasma resonator sensor of graphene | |
| CN111123418B (en) | Graphene plasmon cavity-perfect absorber coupling nano resonance device | |
| CN102569485A (en) | Near-infrared band full silicon-base nanometer photoelectric detector | |
| CN211263831U (en) | Multi-resonance plasmon device based on coupling of graphene and magnetic resonance mode | |
| Amiri et al. | Zinc Oxide nanowire gratings for light absorption control through polarization manipulation | |
| Galanty et al. | Extinction enhancement from a self-assembled quantum dots monolayer using a simple thin films process | |
| CN208043283U (en) | A kind of tunable surface plasma waveguide having temperature sensing | |
| Masouleh et al. | Performance improvement of plasmonic-based thin film assisted MSM-PDs | |
| Kashyap et al. | Comparative study of plasmonics based metal-semiconductor-metal photodetector | |
| CN211014019U (en) | Optical fiber liquid refractive index sensor modified by inverse opal photonic crystal structure | |
| Chen et al. | Simulation of perfect absorber at visible frequencies using TiN-based refractory plasmonic metamaterials | |
| Chen et al. | Comb-shaped photonic crystal structure for efficient broadband light diffraction and funnelling in solar cells | |
| Li et al. | Investigation of Surface Plasmon Resonance in the Rectangular Cavity of Ag-Si-SiO 2 | |
| CN108827481A (en) | One kind is by the modified high-sensitivity surface plasma resonator sensor of graphene | |
| Seifouri et al. | Symmetric metal nanogratings and horned shape extended pads to enhance light transmission of plasmonic metal-semiconductor-metal photodetector | |
| Kaur | Investigation of germanium-based plasmonic-photo-detector improved by dual-absorption method using titanium nitride | |
| Fischer et al. | Plasmonics-integrated Ge PIN-photodetectors: efficiency enhancement by Al nanoantennas and plasmon detection | |
| Azharuddin et al. | Nanophotonics and optical fibers: new avenues for sensing and active devices | |
| Zhu et al. | Design and analysis of a broadband nanoantenna for energy harvesting | |
| Rajput | INTEGRATED PHOTONIC DEVICES BASED ON SILICON-ITO HETEROJUNCTION FOR OPTICAL MODULATION AND DETECTION |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |