CN108414115A - A kind of tunable surface plasma waveguide having temperature sensing - Google Patents
A kind of tunable surface plasma waveguide having temperature sensing Download PDFInfo
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- CN108414115A CN108414115A CN201810261653.3A CN201810261653A CN108414115A CN 108414115 A CN108414115 A CN 108414115A CN 201810261653 A CN201810261653 A CN 201810261653A CN 108414115 A CN108414115 A CN 108414115A
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- temperature sensing
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- 239000002184 metal Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 25
- 235000019441 ethanol Nutrition 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000000872 buffer Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 23
- 230000000694 effects Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 206010020751 Hypersensitivity Diseases 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/32—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in transmittance, scattering or luminescence in optical fibres
- G01K11/3206—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in transmittance, scattering or luminescence in optical fibres at discrete locations in the fibre, e.g. using Bragg scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12138—Sensor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a kind of tunable surface plasma waveguides having temperature sensing, characterized in that silicon substrate layer, InGaAsP semiconductor buffer layers, the duty ratio 10 spliced including sequence from low to uper part：The metal layer of 1 metal grating, the metal layer of the metal grating is identical as thickness by length, width for 2 to 1 metal Ag and graphene than closely connecting and composing, wherein metal Ag is located at the left side of metal layer, graphene is located at the right side of metal layer, and the grating the air gap of the metal grating is filled with temperature sensing medium ethyl alcohol.This waveguide can change the resonance wavelength and threshold value of SPP nano lasers by controlling environment temperature, or the variable quantity by detecting the resonance wavelength of SPP nanometers of waveguide devices, to obtain the variable quantity of environment temperature, the ability of this existing outgoing tunable wave length of waveguide, and there is the detectability highly sensitive to variation of ambient temperature.
Description
Technical field
The present invention relates to technical field of photo communication, specifically a kind of tunable surface plasma-wave for having temperature sensing
It leads.
Background technology
Surface plasma excimer (Surface plasmon polariton, abbreviation SPP) is by changing metal surface
Sub-wavelength structure realize a kind of light wave and transportable surface charge between electromagnet mode, can support metal and medium interface
The surface plasma-wave of transmission, to transmit light energy, and it is not limited by diffraction limit, just because of this unique property of SPP
Matter makes it manipulate light energy in nanometer scale and plays an important role.Zhejiang University and Sweden Royal Institute of Technology A Erfen
The cooperation of laboratory seminar is in " Novel surface plasmon waveguide for high integrations " text
The waveguiding structure of the metallic channel SPP waveguides of proposition, design can realize that the light field limitation of sub-wavelength magnitude, loss are only 4dB/
Um, however although researcher, which realizes, is tied to light field tens nanometers of magnitude, the waveguide device loss of design is still
It is very big, it is unable to reach the requirement of large-scale application.《Nature Photonics》" Broadband gate- have been published in 2018
A tunable terahertz plasmons in graphene heterostructures " texts, Nanjing University and the U.S.
UCLA is prepared for bilayer graphene heterojunction structure the study found that being designed in silicon carbide waveguide, swashs to graphene surface plasma
Member realizes full photocontrol, however, the research of graphene SPP is all confined to waveguide at present, lacks to temperature sensing and studies, meets
The not requirement of practical application.《Naturally it communicates》" Plasmonic gold mushroom arrays have been published in 2013
with refractive index sensing figures of merit approaching the theoretical
A limit " texts, the sensing utensil sensitivity which proposes is up to 1050nmRIU-1, however although researcher realizes
High sensitivity, but the structure size is big, it is not easy of integration, it cannot achieve that photoelectricity is integrated, full light circuit.
The research of SPP waveguides or plasma sensor is mostly concentrated at present first, real for combining SPP waveguides
Existing small size sensor report is very few.
Invention content
The purpose of the present invention is in view of the deficiencies of the prior art, and provide a kind of tunable surface etc. having temperature sensing
Ion waveguide.This waveguide can change the resonance wavelength and threshold value of SPP nano lasers by controlling environment temperature, or pass through
The variable quantity for detecting the resonance wavelength of SPP nanometers of waveguide devices, to obtain the variable quantity of environment temperature, this waveguide it is existing go out
The ability of tunable wave length is penetrated, and there is the detectability highly sensitive to variation of ambient temperature.
Realizing the technical solution of the object of the invention is：
A kind of tunable surface plasma waveguide having temperature sensing, unlike the prior art, including from lower and
Silicon substrate layer that upper sequence is spliced, InGaAsP semiconductor buffer layers, duty ratio 10：The metal layer of 1 metal grating, it is described
The metal layer of metal grating is identical as thickness by length, width for 2 to 1 metal Ag and graphene than closely connecting and composing,
Middle metal Ag is located at the left side of metal layer, graphene is located at the right side of metal layer, between the grating air of the metal grating
Gap is filled with temperature sensing medium ethyl alcohol, and this plasma wave guide structure can form high intensity in single-layer graphene layer edge
LSPR effects, after ethyl alcohol sense ambient temperature, the equivalent effective refractive index of entire plasma waveguide changes, and then altogether
Vibration wave length changes, and the sensing of temperature is realized by detecting formant variation.
The InGaAsP semiconductors are high refractive index medium InGaAsP.
The plasma waveguide has temperature sensing with carrier concentration by the fermi level for changing graphene to realize
Tunable surface plasma waveguide as outgoing tunable wave length SPP nanometer waveguide devices in sub-wavelength dimensions device
Using.
The preparation method of the tunable surface plasma waveguide for having temperature sensing is：It sinks first in silicon substrate layer
Product InGaAsP semiconductor buffer layers, then etch the gold being made of metal Ag and graphene on InGaAsP semiconductor buffer layers
Belong to optical grating construction, then fills temperature sensing medium ethyl alcohol in the grating the air gap of metal grating.
Incident light is incident on plasma waveguide vertically from above, due to the scattering process of plasma wave guide structure, Ag with
Surface plasma resonance phenomenon occurs for InGaAsP semiconductor buffers bed boundary, at the same time, temperature sensing medium ethyl alcohol and graphene circle
Face also achieves surface plasma resonance phenomenon, and above-mentioned 2 class resonance couples, and finally converges to the edge of graphene, shape
At the LSPR effects of high intensity, and due to ethyl alcohol sense ambient temperature after, the equivalent effective refractive index of entire plasma waveguide is sent out
Changing, and then resonant wavelength changes, and the sensing of temperature is realized by detecting formant variation.
Tunable graphene SPP waveguide sensors with thermometer sensor DS18B20 act not only as outgoing Wavelength tunable
Application of the humorous SPP waveguide devices in sub-wavelength dimensions device can be also used for highly sensitive temperature sensing, can pass through
Fermi level, carrier concentration and the environment temperature of graphene are adjusted, realizes the tunable waveguide device of threshold value, meanwhile, and can
In turn, by detecting the variation of resonance wavelength, the slight change of environment temperature is obtained, for highly sensitive temperature sensing
Device.
This waveguiding structure is capable of providing stronger localization constraint, has and is provided substantially for surface plasma exciting circuit
Unit component, to realize bigger bandwidth, ultrafast data transmission, hypersensitive temperature detection application.
This waveguide can change the resonance wavelength and threshold value of SPP nano lasers by controlling environment temperature, or pass through
The variable quantity for detecting the resonance wavelength of SPP nanometers of waveguide devices, to obtain the variable quantity of environment temperature, this waveguide it is existing go out
The ability of tunable wave length is penetrated, and there is the detectability highly sensitive to variation of ambient temperature.
Description of the drawings
Fig. 1 is the structural schematic diagram of embodiment；
In figure, 1. 4. graphenes of 2.InGaAsP layers of silicon substrate layer 3.Ag, 5. ethyl alcohol.
Specific implementation mode
The content of present invention is further elaborated with reference to the accompanying drawings and examples, but is not limitation of the invention.
Embodiment：
Referring to Fig.1, a kind of tunable surface plasma waveguide having temperature sensing, including sequence from low to uper part splice
Silicon substrate layer 1, InGaAsP semiconductor buffer layers 2, duty ratio 10：The metal layer of 1 metal grating, the metal grating
Metal layer is identical as thickness by length, width than for 2 to 1 metal Ag3 and graphene 4 closely connect and compose, wherein metal Ag3
It is located at the right side of metal layer positioned at the left side of metal layer, graphene 4, the grating the air gap of the metal grating is filled with
Temperature sensing medium ethyl alcohol 5, this plasma wave guide structure can form the LSPR effects of high intensity in 4 edge of single-layer graphene layer,
After 5 sense ambient temperature of ethyl alcohol, the equivalent effective refractive index of entire plasma waveguide changes, and then resonance wave long hair
Changing realizes the sensing of temperature by detecting formant variation.
The InGaAsP semiconductors are high refractive index medium InGaAsP.
The plasma waveguide has temperature sensing with carrier concentration by the fermi level for changing graphene to realize
Tunable surface plasma waveguide as outgoing tunable wave length SPP nanometer waveguide devices in sub-wavelength dimensions device
Using.
The preparation method of the tunable surface plasma waveguide for having temperature sensing is：First in silicon substrate layer 1
InGaAsP semiconductor buffer layers 2 are deposited, are then etched by 4 structure of metal Ag3 and graphene on InGaAsP semiconductor buffer layers 2
At metal grating structure, then in the grating the air gap of metal grating filling temperature sensing medium ethyl alcohol 5.
Incident light is incident on plasma waveguide vertically from above, due to the scattering process of plasma wave guide structure, Ag3 with
Surface plasma resonance phenomenon, at the same time, temperature sensing medium ethyl alcohol 5 and graphene occur for 2 interface of InGaAsP semiconductor buffer layers
4 interfaces also achieve surface plasma resonance phenomenon, and above-mentioned 2 class resonance couples, and finally converges to the corner of graphene 4
Place, forms the LSPR effects of high intensity, and due to 5 sense ambient temperature of ethyl alcohol after, equivalent effective folding of entire plasma waveguide
The rate of penetrating changes, and then resonant wavelength changes, and the sensing of temperature is realized by detecting formant variation.
Claims (2)
1. a kind of tunable surface plasma waveguide having temperature sensing, characterized in that splice including sequence from low to uper part
Silicon substrate layer, InGaAsP semiconductor buffer layers, duty ratio 10：The metal layer of 1 metal grating, the gold of the metal grating
Belong to that layer is identical as thickness by length, width for 2 to 1 metal Ag and graphene than closely connecting and composing, wherein metal Ag is located at
The left side of metal layer, graphene are located at the right side of metal layer, and the grating the air gap of the metal grating is filled with temperature-sensitive
Medium ethyl alcohol.
2. the tunable surface plasma waveguide according to claim 1 for having temperature sensing, characterized in that it is described it is equal from
Wavelet be connected change fermi level and the carrier concentration of graphene realize tunable surface for having temperature sensing etc. from
Wavelet is led as the application for being emitted the SPP nanometer waveguide devices of tunable wave length in sub-wavelength dimensions device.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810261653.3A CN108414115B (en) | 2018-03-28 | 2018-03-28 | Tunable surface plasma waveguide with temperature sensing function |
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| CN201810261653.3A CN108414115B (en) | 2018-03-28 | 2018-03-28 | Tunable surface plasma waveguide with temperature sensing function |
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| CN108414115B CN108414115B (en) | 2024-02-27 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108957628A (en) * | 2018-09-20 | 2018-12-07 | 广西师范大学 | A kind of mixing plasma waveguide of the long-range coated by dielectric based on molybdenum disulfide |
| CN109115359A (en) * | 2018-09-20 | 2019-01-01 | 广西师范大学 | A kind of temperature sensor based on hybrid plasma waveguide |
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Cited By (2)
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| CN109115359A (en) * | 2018-09-20 | 2019-01-01 | 广西师范大学 | A kind of temperature sensor based on hybrid plasma waveguide |
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