CN109095499B - Vanadium dioxide multilayer film system and preparation method and application thereof - Google Patents
Vanadium dioxide multilayer film system and preparation method and application thereof Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G31/00—Compounds of vanadium
- C01G31/02—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Abstract
The invention belongs to the field of physics, and particularly relates to a vanadium dioxide multilayer film system, and a preparation method and application thereof. The multilayer film system comprises a metal thin film layer, a graded-refractive-index material thin film layer and a vanadium dioxide thin film layer, wherein the metal thin film, the graded-refractive-index material thin film and the vanadium dioxide thin film are sequentially arranged from bottom to top. The vanadium dioxide multilayer film system utilizes titanium dioxide which is a material with a function of gradually changing refractive index, so that the number of required film layers in the vanadium dioxide multilayer film system is greatly reduced.
Description
Technical Field
The invention belongs to the field of physics, and particularly relates to a vanadium dioxide multilayer film system, and a preparation method and application thereof.
Background
With the vigorous development of aerospace industry in China, the number of various spacecrafts such as deep space detectors, artificial satellites, space laboratories, space telescopes and the like is increased year by year. Due to the increasing of the instrument power consumption and the heat flux density caused by the complexity of the internal equipment of the spacecraft, the change of the space environment faced by the spacecraft is more and more complex. The fluctuation range of the external temperature of the spacecraft is 150-150 ℃ under the common environment, and the fluctuation range can reach 100-400 ℃ under the special environment. Therefore, the importance of heat flow control research in spacecraft for the development of aerospace technology is self-evident.
When the spacecraft runs on the orbit, the external heat flow of the orbit is greatly changed, and the heat load of instrument equipment can fluctuate greatly. The heat radiation is the only heat exchange mode between the spacecraft and the space environment, and the heat control of the spacecraft in the space environment can be changed by changing the absorption of space heat flow, the heat generation of internal devices and the external radiation of the surface of the spacecraft.
Vanadium dioxide is a metal oxide with phase change property, the phase change temperature of the vanadium dioxide is 68 ℃, and the structural change before and after the phase change causes reversible conversion of infrared light from transmission to reflection; according to the characteristics, the skilled person applies vanadium dioxide to the multilayer film element, and the multilayer film element is widely used in the technical field of spacecraft thermal control application.
The intelligent variable-radiance multilayer film device developed based on vanadium dioxide has great application prospect in future spacecraft thermal control technology due to the advantages of small volume, light weight, extremely low energy consumption, flexible regulation and control and the like. But because of VO2The material has low emissivity at high temperature, and does not meet the thermal control requirement of a spacecraft, so researchers in various countries try to fully utilize the MIT (phase transition) characteristic of the material by various technical means. When they are used, a vanadium dioxide multilayer film element is produced.
Optimizing the design of vanadium dioxide multilayer film elements to change their emissivity change characteristics is considered to be one of the most promising approaches. However, in the multilayer film system of the existing vanadium dioxide multilayer film element, because the vanadium oxides are of a great variety and have properties and growth conditions close to each other, researchers actually prepare a vanadium dioxide film (i.e. a vanadium dioxide multilayer film) which is mainly made of vanadium dioxide and accompanied by a small amount of other heterogeneous thin film materials such as V2O5、VO2、V2O3VO, and the like, and V existsnO2n-1(3. ltoreq. n. ltoreq.9) and VnO2n+1(n is more than or equal to 3 and less than or equal to 6), the phase lattice structures of the vanadium with different valence states are different, the lattice structures, electricity, optics and other physical properties of each phase are greatly different, and the phase change property of the final film material is greatly influencedCan be used. Particularly, in a multilayer film system containing the vanadium dioxide film, different films can interact at the interface of the film layer to influence the growth characteristics of the films, so that the preparation of the vanadium dioxide film with excellent performance in the multilayer film system is difficult.
Disclosure of Invention
In order to solve the problems, the invention provides a vanadium dioxide multilayer film system and a preparation method and application thereof. The vanadium dioxide multilayer film system utilizes materials with the function of gradually changing refractive index, so that the number of required film layers in the vanadium dioxide multilayer film system is greatly reduced.
The invention is realized by the following technical scheme:
a vanadium dioxide multilayer film system comprises a metal thin film layer, a graded-refractive-index material thin film layer and a vanadium dioxide thin film layer, wherein the metal thin film layer, the graded-refractive-index material thin film layer and the vanadium dioxide thin film layer are sequentially arranged from bottom to top.
Further, the graded index material thin film layer means that the refractive index of the thin film gradually changes along the film thickness direction, but remains unchanged in the horizontal direction. Compared with the traditional uniform film system, the graded index material film has wider action spectrum band, reduces the degree of dependence on the incident angle of the light, can realize antireflection in a wide band and a full solid angle range, and is considered as the main development form of a 'perfect' antireflection film in the future.
Further, the gradient refractive index material film layer is a titanium dioxide film layer.
Further, the titanium dioxide thin film layer is formed by TiO2Lattice parameter and VO2The crystal lattice mismatch degree of the titanium dioxide film and the vanadium dioxide film is only about 0.6%, the growth characteristic of the vanadium dioxide film can be effectively improved by using the titanium dioxide film as a vanadium dioxide film buffer layer, and meanwhile, the titanium dioxide film has stable physical and mechanical properties, good space irradiation resistance and visible lightAnd the glass has higher transmittance in an infrared band range, has higher refractive index and can be changed within a range of 1.9-2.3 along with the change of preparation process parameters.
Furthermore, the titanium dioxide thin film layer is used as a bottom growth buffer layer of the vanadium dioxide thin film layer by utilizing the lattice high matching characteristic of titanium dioxide, so that the growth characteristic of the vanadium dioxide thin film layer can be effectively improved, and because the refractive index of the titanium dioxide thin film layer is continuously adjustable, an extra degree of freedom is added for the design of a spectral film system of the vanadium dioxide multilayer film system with adjustable radiance, the number of layers of thin films in the designed film system structure can be effectively reduced, and the preparation complexity and difficulty coefficient are reduced;
because the titanium dioxide film layer overcomes the jump characteristic of an interface in the traditional optical film, light rays can be approximately transmitted in a curve in the titanium dioxide film layer, Fresnel reflection is eliminated, compared with a uniform film system, the radiance adjusting spectrum has wider spectrum section, the dependence degree on the incident angle of the light rays is reduced, and the radiance adjustment in an infrared broadband range and a full solid angle range can be realized;
meanwhile, the titanium dioxide film layer eliminates the interface between film layers, so that the defect generation probability in the growth of a film system can be greatly reduced, and the growth quality of the film system is improved;
in addition, the titanium dioxide thin film layer has the performances of ideal spectral characteristics, adjustable stress, super-smooth surface, extremely low defect density, good adhesion and the like which are difficult to realize by the traditional layered dielectric film.
Further, in the vanadium dioxide multilayer film system, at a low temperature below 68 ℃, the vanadium dioxide thin film layer is a semiconductor phase and has a high transmittance in an infrared band, light waves pass through the vanadium dioxide thin film layer and the gradient refractive index material thin film layer and are emitted from the vanadium dioxide multilayer film system after being reflected by the metal thin film layer (such as Al) with a high reflectance in the infrared band, and the reflectance is high, and at the moment, the vanadium dioxide multilayer film system has a low emissivity characteristic; at a high temperature of more than 68 ℃, the vanadium dioxide thin film layer instantaneously changes into a metal phase, forms a similar FP resonant cavity structure with the bottom metal thin film layer and the gradient refractive index material thin film layer, and realizes the minimum reflectivity under an infrared spectrum section under the destructive interference effect through reasonable matching with the optical thickness of the gradient refractive index material thin film layer, and at the moment, the vanadium dioxide multilayer film system has high radiance characteristic.
The invention also provides a preparation method of the vanadium dioxide multilayer film system, which comprises the step of sputtering metal, the gradient refractive index material and vanadium dioxide on an element substrate in sequence by adopting a sputtering process to form the vanadium dioxide multilayer film system with the structure of the vanadium dioxide thin film layer/the gradient refractive index material thin film layer/the metal thin film layer.
Further, the metal is aluminum, gold or silver.
Further, the preparation method comprises the following specific steps:
step one, theoretically designing and optimizing the spectral performance of a vanadium dioxide multilayer film system
Adopting film system design analysis software to respectively analyze the influence trend and the change rule of the sputtering process parameters on the performance of the graded refractive index material and the performance of the vanadium dioxide film, thereby carrying out process preparation tolerance evaluation; further obtaining the refractive index distribution of the material film layer with the gradually-changing refractive index which is prepared by the actual sputtering process and the deposition process of the vanadium dioxide film which deposits and grows on the material film layer with the gradually-changing refractive index; on the basis, a film system with large spectral bandwidth range, full solid angle space and large radiation rate adjusting amplitude is obtained by optimizing the design of the film system;
step two, sputtering the gradient refractive index material film layer
Depositing metal on the element substrate under the conditions of high vacuum and high deposition rate to obtain the metal thin film layer; then, the influence trend and the change rule of sputtering process parameters on the performance of the graded index material are contrastively analyzed, complete optical performance characterization is carried out on the graded index material, and the deposition parameters of the thin film layer of the graded index material are obtained according to the refractive index distribution requirement of titanium dioxide in the step one;
step three, preparing a vanadium dioxide thin film layer
Before the vanadium dioxide thin film layer is prepared on the graded-refractive-index material thin film layer, firstly, optimizing the deposition parameters of the vanadium dioxide thin film sputtered on the graded-refractive-index material thin film layer, comprehensively evaluating the characteristics of the vanadium dioxide thin film, analyzing and comparing TiO2Preparation of VO (volatile organic compounds) by using graded-refractive-index thin film layer and sputtering process parameter pair2The performance influence trend of the film growth is analyzed according to the film deposition epitaxial growth theory2The gradient refractive index film layer such as crystal structure, surface microstructure, stress and the like is subjected to sputtering deposition to grow VO2The film actually influences the characteristics and mechanism of the factors. On the basis, VO is controlled to be completed2Preferential growth of the film along a predetermined phase and with TiO2The stress of the graded-index material is cooperatively adjusted to improve the phase-change temperature, so that the deposition process parameters of the vanadium dioxide film on the graded-index material film layer for deposition growth are obtained; preparing the vanadium dioxide thin film layer on the graded-refractive-index material thin film layer according to the deposition process parameters to obtain the vanadium dioxide multilayer film system with the structure of vanadium dioxide thin film layer/graded-refractive-index material thin film layer/metal thin film layer;
step four, performing a first step of cleaning the substrate,
testing and evaluating the regulation performance of the radiance of the element by using a radiance tester to complete VO2/TiO2The VO with simple structure, high radiance adjusting efficiency and stable preparation process2Preparation and characterization of multilayer film systems.
Further, the deposition parameters in the third step include sputtering electrical parameters, growth temperature, growth pressure, Ar/O2Flow rate and proportion of reaction gas.
Further, in the third step, comprehensively evaluating the characteristics of the vanadium dioxide film includes:
1) characterizing the content of + 4-valent V in the film by XPS;
2) characterizing the crystal phase components by an X-ray diffractometer;
3) testing the surface shape change of the film surface by using an interferometer, and evaluating the stress characteristic;
4) VO testing by four-probe resistance measuring instrument2Characteristic changes before and after phase change;
5) representing phase change characteristics such as phase change temperature, thermal hysteresis width, phase change amplitude and the like according to the thermal hysteresis loop;
6) measuring the spectral transmittance before and after phase change by using a spectrophotometer, and indirectly evaluating the radiance modulation performance characteristic of the film;
7) testing and evaluating the aggregation density of the film by an ellipsometer;
8) the microstructure was characterized by field emission scanning electron microscopy.
Further, the sputtering technological parameters comprise the optimization of the gradient refractive index titanium dioxide and vanadium dioxide collaborative parameters; the synergistic parameters comprise sputtering parameters and O2Partial pressure feedback control, Ar/O2Gas proportioning, growth temperature and growth pressure.
Furthermore, the main means for modulating the graded index distribution of the graded index material is to adjust Speedflo software in a magnetron sputtering coating machine to dynamically control O according to the design requirement of the refractive index distribution of a graded index material film layer2Partial pressure.
Further, the preparation method adopts a magnetron sputtering deposition technology.
The invention also provides a vanadium dioxide multilayer film element prepared by the preparation method of the vanadium dioxide multilayer film system, and the vanadium dioxide multilayer film element comprises the vanadium dioxide multilayer film system and an element substrate for bearing the vanadium dioxide multilayer film system.
The invention also provides an application of the vanadium dioxide multilayer film element in the field of spacecraft thermal control.
The invention has the following beneficial technical effects:
(1) the vanadium dioxide multilayer film system utilizes the continuous adjustable refractive index of the graded-index material film, adds extra degree of freedom for film system spectrum design, can effectively reduce the number of layers of the film system structure film, simplifies the multilayer film system structure (only the graded-index material layer between the metal film layer and the vanadium dioxide film layer), and reduces the preparation complexity and difficulty coefficient.
(2) The vanadium dioxide multilayer film system utilizes the titanium dioxide film as the spacing layer to design and prepare the vanadium dioxide multilayer film system element with intelligently adjusted radiance, and because the titanium dioxide gradient refractive index material film overcomes the jump characteristic of the interface in the traditional optical film, light can be approximately transmitted in a curve in the vanadium dioxide multilayer film system, Fresnel reflection is eliminated, the radiance adjusting spectrum action spectrum section of the vanadium dioxide multilayer film system is wider, the dependence degree on the incident angle of the light is reduced, and the radiance adjustment in the infrared wide-band and full solid angle range can be realized.
(3) The vanadium dioxide multilayer film system can effectively induce pure-phase growth of the titanium dioxide film by utilizing the characteristic of high matching degree of the crystal form of the titanium dioxide and the vanadium dioxide, reduce the influence degree of magnetron sputtering parameters on the preparation of the vanadium dioxide film, simultaneously reasonably utilize the stress synergistic adjustment characteristic of the titanium dioxide graded index material and the vanadium dioxide film, effectively improve the phase transition temperature of the vanadium dioxide film, and solve the technical problem of preparing the pure-phase vanadium dioxide film with excellent phase transition performance in the multilayer film system.
(4) The vanadium dioxide multilayer film system utilizes titanium dioxide graded index material as the spacing layer to replace a plurality of interference interfaces generated by the traditional spacing layer containing multilayer films, greatly reduces the defect generation probability in the film growth, improves the film forming quality of the vanadium dioxide film, realizes the performances which are difficult to realize by the traditional layered dielectric film, such as ideal spectral characteristics, super-smooth surface, adjustable stress, extremely low defect density, good adhesive force and the like, and provides favorable guarantee for developing a vanadium dioxide film element with excellent radiance and automatic adjustment.
Drawings
Fig. 1 is a schematic structural diagram of a vanadium dioxide multilayer film element in an embodiment of the invention.
FIG. 2 is a schematic structural diagram of a vanadium dioxide multilayer membrane element in the prior art.
Description of reference numerals: 1 is a vanadium dioxide thin film layer; 2 is a graded index material film layer; 3 is a metal film layer; 4 is an element substrate; 2 '-1-2' -N is a spacing layer in the vanadium dioxide multilayer membrane element.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
On the contrary, the invention is intended to cover alternatives, modifications, equivalents and alternatives which may be included within the spirit and scope of the invention as defined by the appended claims. Furthermore, in the following detailed description of the present invention, certain specific details are set forth in order to provide a better understanding of the present invention. It will be apparent to one skilled in the art that the present invention may be practiced without these specific details.
Example 1
The present example provides a vanadium dioxide multilayer film element comprising a vanadium dioxide multilayer film system and an element substrate supporting the vanadium dioxide multilayer film system.
The preparation method of the vanadium dioxide multilayer membrane element comprises the following specific steps:
step one, theoretically designing and optimizing the spectral performance of a vanadium dioxide multilayer film system
Analyzing the influence trend and change rule of sputtering process parameters on the performance of the graded refractive index material and the performance of the vanadium dioxide film respectively by adopting the existing film system analysis software so as to evaluate the process preparation tolerance; further obtaining the refractive index distribution of the required gradient refractive index material film layer which is beneficial to the preparation of the actual process; on the basis, the vanadium dioxide multilayer film system is designed and obtained, and has spectral performance with large spectral bandwidth range, full solid angle space and large radiance adjusting amplitude in an infrared band (1-2.5 micrometers);
step two, sputtering the gradient refractive index material film layer
Depositing metal on the element substrate under the conditions of high vacuum and high deposition rate to obtain the metal thin film layer; then, the influence trend and the change rule of sputtering process parameters on the performance of the material with the gradually-changing refractive index are contrastively analyzed, and complete optical performance characterization is carried out on the material with the gradually-changing refractive index, so that the process parameters of the refractive index distribution of the thin film layer of the material with the gradually-changing refractive index are obtained;
step three, preparing a vanadium dioxide thin film layer
Before the vanadium dioxide thin film layer is prepared on the graded-refractive-index material thin film layer, firstly, optimizing the deposition parameters of the vanadium dioxide thin film sputtered on the graded-refractive-index material thin film layer and comprehensively evaluating the characteristics of the vanadium dioxide thin film so as to obtain the deposition process parameters of the vanadium dioxide thin film for deposition growth on the graded-refractive-index material thin film layer, and on the basis, obtaining the deposition process parameters of the vanadium dioxide thin film for deposition growth on the graded-refractive-index material thin film layer
Completing the preparation of the vanadium dioxide multilayer film element with the structure of a vanadium dioxide thin film layer/a graded-refractive-index material thin film layer/a metal thin film layer/an element substrate;
in the embodiment, the material film layer with the gradually-changed refractive index is a titanium dioxide film layer, and the metal of the metal film layer is aluminum;
the vanadium dioxide multilayer film element with the structure of vanadium dioxide thin film layer/titanium dioxide thin film layer/aluminum thin film layer/element substrate is obtained according to the preparation method of the vanadium dioxide multilayer film element.
Analyzing and comparing the influence trend of the titanium dioxide film layer and the sputtering process parameters on the growth performance of the prepared titanium dioxide film, and analyzing the characteristics and the mechanism of the actual influence factors of the titanium dioxide film layer such as a crystal structure, a surface microstructure, stress and the like on the growth of the vanadium dioxide film by sputtering deposition according to the film deposition epitaxial growth theory. On the basis, the preferential growth of the vanadium dioxide film along the preset phase and the cooperative regulation of the stress of the titanium dioxide film material are controlled to improve the phase transition temperature, and the preparation is realized by utilizing the coordination regulation and control of the gradient refractive index titanium dioxide film layer, the vanadium dioxide and the metal film deposition processHigh-performance vanadium dioxide thin film layer/titanium dioxide thin film layer/aluminum thin film layer/element substrate (VO)2/TiO2Al/SUB, wherein SUB is the element substrate) thermal control element, and the emissivity tester is used for testing and evaluating the emissivity regulation performance of the element to complete VO2/TiO2The preparation and characterization of the vanadium dioxide multilayer film element with the advantages of simple structure, high radiance adjusting efficiency and stable preparation process of the/Al/SUB film element.
The vanadium dioxide multilayer film element of the embodiment utilizes titanium dioxide graded index material as the spacing layer to replace a plurality of interference interfaces generated by the traditional spacing layer containing multilayer films, thereby greatly reducing the defect generation probability in the film growth, improving the film forming quality of the vanadium dioxide film, realizing the performances which are difficult to realize by the traditional layered dielectric film, such as ideal spectral characteristics, super-smooth surface, adjustable stress, extremely low defect density, good adhesive force and the like, and providing favorable guarantee for developing the vanadium dioxide film element with excellent radiance and automatic adjustment.
Claims (6)
1. The vanadium dioxide multilayer film system is characterized by comprising a metal thin film layer, a graded-refractive-index material thin film layer and a vanadium dioxide thin film layer, wherein the metal thin film layer, the graded-refractive-index material thin film layer and the vanadium dioxide thin film layer are sequentially stacked from bottom to top, the graded-refractive-index material thin film layer is a titanium dioxide thin film layer, the multilayer film system is formed by sputtering metal, a graded-refractive-index material and vanadium dioxide on an element substrate in sequence by adopting a sputtering process to form the vanadium dioxide multilayer film system with the structure of the vanadium dioxide thin film layer/the graded-refractive-index material thin film layer/the metal thin film layer, and the preparation method of the multilayer film system comprises:
step one, theoretically designing and optimizing the spectral performance of a vanadium dioxide multilayer film system
Analyzing the influence trend and the change rule of the simulated sputtering process parameters on the performance of the graded refractive index material and the performance of the vanadium dioxide film respectively by adopting the existing film design software, thereby carrying out process preparation tolerance evaluation; the refractive index of the gradient refractive index material film layer which is beneficial to the actual process preparation is obtained to be in the range of 1.9-2.3, the advantage that the refractive index of the titanium dioxide gradient refractive index material is continuously adjustable is utilized, and the vanadium dioxide multilayer film system which is obtained through design optimization has the spectral performance that the spectral bandwidth range is large, the whole solid angle space is large, and the radiance adjusting range is large in the infrared band;
step two, sputtering the gradient refractive index material film layer
Depositing metal on the element substrate under the conditions of high vacuum and high deposition rate to obtain the metal thin film layer; then, the influence trend and the change rule of sputtering process parameters on the performance of the material with the gradually-changing refractive index are contrastively analyzed, and complete optical performance characterization is carried out on the material with the gradually-changing refractive index, so that the preparation implementation process parameters of the thin film layer of the material with the gradually-changing refractive index are obtained;
step three, preparing a vanadium dioxide thin film layer
Before the vanadium dioxide thin film layer is prepared on the graded-refractive-index material thin film layer, firstly, optimizing the deposition parameters of the vanadium dioxide thin film sputtered on the graded-refractive-index material thin film layer and comprehensively evaluating the characteristics of the vanadium dioxide thin film so as to obtain the deposition process parameters of the vanadium dioxide thin film for deposition growth on the graded-refractive-index material thin film layer;
and preparing the vanadium dioxide thin film layer on the graded-refractive-index material thin film layer according to the deposition process parameters to obtain the vanadium dioxide multilayer film system with the structure of vanadium dioxide thin film layer/graded-refractive-index material thin film layer/metal thin film layer.
2. The vanadium dioxide multilayer film system according to claim 1, wherein the metal is aluminum, gold or silver.
3. The vanadium dioxide multilayer film system according to claim 1, wherein in step three, the comprehensive evaluation of the characteristics of the vanadium dioxide film comprises:
1) characterizing the content of + 4-valent V in the film by XPS;
2) characterizing the crystal phase components by an X-ray diffractometer;
3) testing the surface shape change of the film surface by using an interferometer, and evaluating the stress characteristic;
4) VO testing by four-probe resistance measuring instrument2Characteristic changes before and after phase change;
5) representing phase change characteristics such as phase change temperature, thermal hysteresis width, phase change amplitude and the like according to the thermal hysteresis loop;
6) measuring the spectral reflectance/transmittance before and after the phase change by using a spectrophotometer, and indirectly evaluating the radiance modulation performance characteristic of the film;
7) testing and evaluating the aggregation density of the film by an ellipsometer;
8) the microstructure was characterized by field emission scanning electron microscopy.
4. The vanadium dioxide multilayer film system of claim 1, wherein the sputtering process parameters include graded index titanium dioxide and vanadium dioxide co-parametric optimization; the collaborative parameter optimization comprises sputtering parameters and O2Partial pressure feedback control, Ar/O2Gas proportioning, growth temperature and growth pressure.
5. The vanadium dioxide multilayer film system according to any one of claims 1 to 4, wherein the vanadium dioxide multilayer film element comprises a vanadium dioxide multilayer film system based on a graded index material titanium dioxide and an element substrate carrying the vanadium dioxide multilayer film system.
6. The application of the vanadium dioxide multilayer film element prepared by the preparation method of the vanadium dioxide multilayer film system according to claim 5 in the field of thermal control of spacecrafts.
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| CN109095499A (en) | 2018-12-28 |
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