CN107179571A - A kind of visible ultra-wideband absorber and preparation method thereof - Google Patents
A kind of visible ultra-wideband absorber and preparation method thereof Download PDFInfo
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- CN107179571A CN107179571A CN201710387519.3A CN201710387519A CN107179571A CN 107179571 A CN107179571 A CN 107179571A CN 201710387519 A CN201710387519 A CN 201710387519A CN 107179571 A CN107179571 A CN 107179571A
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Abstract
Infrared broad band absorber and preparation method thereof is arrived the invention discloses one kind is visible.The device is made up of sandwich construction, is metal back layer, polymer particles layers, metal intermediate layer, dielectric layer and metal outer successively upwards from substrate.Absorber operation wavelength can covering visible light wave band (0.4~0.8 μm), shortwave (1.1~3 μm), medium wave (3~6 μm) and long wave (6~14 μm) infrared band.Peak absorbance rate A may be up to 99%, and full width at half maximum (FWHM) is up to 2 μm.The absorber has that absorption efficiency is high, service band is wide, Wavelength tunable；It is insensitive to incident light polarization, angle；And technique it is simple, with low cost, can large area prepare and can be grown in the first-class series of advantages of flexible substrate.
Description
Technical field
The present invention relates to field of optical device technology, it is related to a kind of visible to ultra-wideband absorber and preparation method thereof.
Background technology
Broadband perfect absorber is all the hot subject of sciemtifec and technical sphere, especially visible red wave section broadband all the time
Absorb because its various fields such as solar energy acquisition, infrared acquisition, information sensing, solar thermal utilization important application demand be even more by
The extensive concern of people is arrived.Tradition enhancing absorption process is typically the absorbent properties combination anti-reflection using material itself
Means, or the purpose for using more complicated structural system to reach wide band absorption.These methods respectively have feature, but general system
It is thicker or can only operate in specific wave band.
The appearance of phasmon metamaterial provides a new thinking for the research in the field.It is super based on phasmon
Structure material system realizes that the scheme of hypersorption has a lot, and metallic particles-dielectric layer-metal level metamaterial system is to realize superabsorbent
One of typical structure of receipts.Compared with conventional method, the system has deep sub-wavelength characteristic, and the integral thickness of general system only has
More than one the percent of operation wavelength.But this structure general work wave band is narrower.In order to realize broadband absorption, people carry in succession
Go out top layer by single big little metallic particles, be changed to by periodically or non-periodically metallic particles not of uniform size, or in original
Have and pile up the labyrinth that dielectric-metal cycle layer forms multiple-level stack on the basis of three-decker again.These methods really may be used
With the operation wavelength of broadening system, but material preparation will generally use the advanced modern micro-nano such as beamwriter lithography or ultraviolet photolithographic
Process technology, preparation process is complicated, and cost is high, and efficiency is low.
The invention discloses by being simply vapor-deposited or liquid deposition growing film, with polystyrene spheres self assembly
Mode prepares a kind of visible ultra-wideband absorber in any substrate over-assemble double-layer spherical shell structure.Advantage includes：The structure has
There is absorption efficiency high, peak absorbance rate may be up to 100%；Service band is wide, and full width at half maximum (FWHM) is up to 2 μm；Wavelength tunable, radiates peak
Position can arbitrarily be adjusted in 1.1~15 mu m wavebands；It is insensitive to incident light polarization, angle；And technique it is simple, with low cost, can
Large area is prepared and can grown on flexible substrates.
The content of the invention
It is cheap the invention discloses a kind of visible ultra-wideband absorber, and a kind of large area, it is simple controllable,
Realize the preparation method of the perfect absorber in broadband.
The method of the present invention is that vapour deposition or liquid deposition growth metal film layer are used on substrate, then thin at this
Film layer spreads individual layer bead using the mode of polystyrene spheres self assembly, is sequentially depositing spherical shell in metal on polystyrene spheres thereafter
Layer, dielectric layer, the outer spherical shell layer of metal ultimately forms double spherical shell structure.
Double spherical shell structure involved in the present invention, its structure is：It is metal film layer 2, polymer particles successively on substrate 1
Grain 3, inner metallic layer spherical shell layer 4, dielectric layer 5, metal outer spherical shell 6, wherein：
As shown in Figure 1, described metal film layer 2 is the noble metal films such as platinum, gold, silver, copper, aluminium layer, and thickness is
100nm or more；
As shown in Figure 1, described polymer beads can be polystyrene, polymethyl methacrylate or polymer/bis-
Silica composite material, particle diameter is adjustable in 100 nanometers to 1 micrometer range.It is approximately with hexagonal Mi Dui between ball and ball
Long-pending mode is arranged, long-range order；
Described polymer beads 3 use under room temperature condition visible near-infrared wave band ball dielectric constant be 1.57-
Polystyrene sphere between 1.62.Bulb diameter can span 100-1000nm,
As shown in Figure 1, described inner metallic layer spherical shell layer 4 is the metal film layers such as platinum, gold, silver, copper, aluminium, and thickness takes
Value scope is 5-15nm；
As shown in Figure 1, described dielectric layer 5 can be the oxide or sulfide to relevant work wave band weak absorbing
Deng, such as aluminum oxide, titanium oxide, zinc oxide, zinc sulphide, the thickness of film layer is 5-100nm；
As shown in Figure 1, described metal outer spherical shell 6 is the metal film layers such as platinum, gold, silver, copper, aluminium, and thickness is 5-
15nm。
The absorber has that absorption efficiency is high, service band is wide, Wavelength tunable；It is insensitive to incident light polarization, angle；And
Technique is simple, with low cost, can large area prepare and can be grown in the first-class series of advantages of flexible substrate.
Brief description of the drawings
Fig. 1：Metal double spherical shell structure ultra-wideband absorber structure schematic diagram.1 is silicon substrate in figure；2 be metal (gold)
Bottom, thickness is 100nm；3 be polystyrene spheres, a diameter of 450nm；4 be inner metallic layer spherical shell layer, and thickness is 5nm；5 be Jie
Matter layer (aluminum oxide) thickness is 50nm；6 be metal outer spherical shell layer, and thickness is 5nm.
Fig. 2：Metal double spherical shell structure medium-wave infrared broad band absorber Sample Scan Electronic Speculum (SEM) figure.Polyphenyl second in a figures
A diameter of 300nm of alkene ball；A diameter of 450nm of polystyrene spheres in b figures；The a diameter of 800nm of c figure polystyrene spheres；D figures are poly-
Styrene bulb diameter is 4 μm.
Fig. 3：Metal double spherical shell structure medium-wave infrared broad band absorber sample absorption spectra a figures are the knot that FDTD simulations are calculated
Really；B figures are experimental result, a diameter of 450nm of polystyrene spheres used, inner metallic layer spherical shell layer and outer layer spherical shell layer in experiment
Thickness be all 5nm, the thickness of alumina medium layer is 50nm.
Embodiment：
It is further below in conjunction with specific embodiment for present disclosure, technical scheme and advantage is more clearly understood
The present invention is illustrated, these embodiments are merely to illustrate the present invention, and the present invention is not limited only to following examples.Below in conjunction with the accompanying drawings
Embodiment to the present invention elaborates：
Embodiment 1
Thermal evaporation deposition 100nm gold (Au) film is utilized on a silicon substrate, passes through polystyrene (PS) on the thin film
The mode of ball self assembly forms individual layer PS layers of balls.PS balls used in us are the poly- of Thermo Scientific companies production
The styrene ball 10wt% aqueous solution.PS the small ball's diameters are 400nm.Then thermal evaporation deposition 5nm gold thin film is utilized, metal has
Chemical machine vapor phase method deposits 10nm zinc-oxide films, then utilizes thermal evaporation deposition 5nm gold thin film in outermost layer.Sample is by surveying
Examination, gained absorption spectra is more than 90% in 1.5-2.4 μm of sample absorptivity, and peak absorbance rate (98%), full width at half maximum (FWHM) is (0.5 μ
m)。
Embodiment 2
Electron beam evaporation 100nm gold thin film on a glass substrate, on the thin film by polystyrene (PS) ball from group
The mode of dress forms individual layer PS layers of balls.Used PS balls are the polystyrene spheres that Thermo Scientific companies produce
The 10wt% aqueous solution.PS the small ball's diameters are 400nm.Then electron beam evaporation 5nm gold thin film, ald 30nm are utilized
Aluminum oxide film, then 5nm gold thin film is sputtered using ar-ion beam in outermost layer.Sample exists by test, gained absorption spectra
1.5-2.9 μm of sample absorptivity is more than 90%, and peak absorbance rate (95%), full width at half maximum (FWHM) is (0.7 μm).
Embodiment 3
Ar-ion beam sputtering 100nm gold thin film is on the thin film by polystyrene (PS) ball from group on gallium arsenic substrate
The mode of dress forms individual layer PS layers of balls.PS balls used in us are the polystyrene that Thermo Scientific companies produce
The ball 10wt% aqueous solution.PS the small ball's diameters are 500nm, using oxygen rie to 300nm, are then sputtered using ar-ion beam
5nm gold thin film, the nm zinc-oxide films of magnetron sputtering 100, then 5nm gold thin film is sputtered using ar-ion beam in outermost layer.Sample
Product are by test, and gained absorption spectra is more than 85% in 2-3.8 μm of sample absorptivity, peak absorbance rate (98%), and full width at half maximum (FWHM) is
(0.9μm)。
Embodiment 4
Thermal evaporation deposition 100nm gold thin film is utilized on copper coin substrate, passes through polystyrene (PS) ball on the thin film
The mode of self assembly forms individual layer PS layers of balls.PS balls used in us are the polyphenyl that Thermo Scientific companies produce
The ethene ball 10wt% aqueous solution.PS the small ball's diameters are 450nm.Then thermal evaporation deposition 5nm gold thin film is utilized, metal is organic
Chemical vapor deposition 10nm aluminum oxide films, then utilize thermal evaporation deposition 5nm gold thin film in outermost layer.Sample is by surveying
Examination, gained absorption spectra is more than 90% in 2.2-4.4 μm of sample absorptivity, and peak absorbance rate (95%), full width at half maximum (FWHM) is (1 μm).
Embodiment 5
The electron beam evaporation 100nm gold thin film in quartz substrate, on the thin film by polystyrene (PS) ball from group
The mode of dress forms individual layer PS layers of balls.PS balls used in us are the polystyrene that Thermo Scientific companies produce
The ball 10wt% aqueous solution.PS the small ball's diameters are 450nm.Then electron beam evaporation 5nm gold thin film, ald are utilized
30nm aluminum oxide films, then 5nm gold thin film is sputtered using ar-ion beam in outermost layer.Sample is by test, gained absorption spectra
It is more than 90% in 2.4-4.5 μm of sample absorptivity, peak absorbance rate (99%), full width at half maximum (FWHM) is (1.8 μm).
Embodiment 6
Ar-ion beam sputters 100nm gold thin film on gallium arsenic substrate, on the thin film by polystyrene (PS) ball certainly
The mode of assembling forms individual layer PS layers of balls.PS balls used in us are the polyphenyl second that Thermo Scientific companies produce
The alkene ball 10wt% aqueous solution.PS the small ball's diameters are 450nm.Then 5nm gold thin film, magnetron sputtering are sputtered using ar-ion beam
50nm aluminum oxide films, then 5nm gold thin film is sputtered using ar-ion beam in outermost layer.Sample is by test, gained absorption spectra
As a result as shown in Fig. 3.As seen from the figure, it is more than 90%, peak absorbance rate (99%), full width at half maximum (FWHM) in 2.9-6 μm of sample absorptivity
For (2 μm).
Embodiment 7
Electron beam evaporation 150nm aluminium film passes through polystyrene (PS) ball self assembly on the thin film on a silicon substrate
Mode form individual layer PS layers of balls.PS balls used in us are the water for the 10wt% that Thermo Scientific companies produce
Solution.PS the small ball's diameters are in 200nm or so.Then electron beam evaporation 9nm aluminium film, magnetron sputtering 20nm aluminum oxide are utilized
Film, then utilize electron beam evaporation 9nm aluminium film in outermost layer.The broadband absorption that ultraviolet band is more than 90% can be achieved
Spectrum.
Embodiment 8
Electron beam evaporation 200nm Ag films are on the thin film by polystyrene (PS) ball from group on a glass substrate
The mode of dress forms individual layer PS layers of balls.PS balls used in us are the 10wt%'s that Thermo Scientific companies produce
The aqueous solution.PS the small ball's diameters are in 1000nm or so.Then electron beam evaporation 8nm Ag films, magnetron sputtering 30nm oxidations are utilized
Aluminium film, then utilize electron beam evaporation 8nm Ag films in outermost layer.The broadband that visible light wave range is more than 90% can be achieved
Absorption spectra.
Claims (2)
1. a kind of visible ultra-wideband absorber, its structure is：It is upwards metal back layer (2), polymer successively from substrate (1)
Stratum granulosum (3), inner metallic layer spherical shell layer (4), dielectric layer (5), metal outer spherical shell layer (6), its feature are as follows：
Described substrate (1) selects silicon, germanium or silica, or chooses the polytetrafluoroethylmaterial material with flexible speciality；
The polymer of described polymer particles layers (3) is polystyrene or polymethyl methacrylate, or both polymer
With the composite of silica, particle diameter is in 200 nanometers to 1 micrometer range；
The metal of described metal back layer (2), inner metallic layer spherical shell layer (4) and metal outer spherical shell layer (6) be platinum, gold, silver,
Copper, aluminium, metal back layer thickness is much larger than the penetration depth that absorption light is propagated into metal；Inner metallic layer spherical shell layer (4) and metal
The thickness of outer layer spherical shell layer (6) is 5-20 nanometers；
Described dielectric layer (5) is alundum (Al2O3), zinc oxide, titanium dioxide, silica or zinc sulfide compounds, and thickness is
5-100 nanometers.
2. a kind of prepare a kind of method of visible ultra-wideband absorber as claimed in claim 1, it is characterised in that including
Following key step：
1) structure design, absorber is designed using methods such as time-domain finite difference or finite element methods, and absorber is from substrate
(1) it is upwards metal back layer (2), polymer particles layers (3), inner metallic layer spherical shell layer (4), dielectric layer (5), metal outer successively
Spherical shell layer (6)；In order that system is without transmission, metal back layer thickness is much larger than the penetration depth that absorption light is propagated into metal, pin
To different operation wavelengths, remaining each layer geometric parameter need to be optimized accordingly；
2) according to step 1) result of structure design, can be using the method such as magnetron sputtering, electron beam evaporation, double ion beam sputtered
One kind prepare metallic film；
3) according to step 1) result of structure design, polymer particles layers can be prepared with self-assembling method.With Thermo
Exemplified by the polystyrene spheres of Scientific companies production, prepare a silicon chip for cleaning up simultaneously hydrophilic treated, steep 12
12 hours in sodium alkyl sulfate solution；Concentration is taken uniformly to be mixed with absolute ethyl alcohol for the 10wt% polystyrene spheres aqueous solution, than
Example is 1:1, and it is ultrasonic 15 minutes.The solution is dripped on the silicon chip after cleaning drying after immersion, drying forms individual layer PS beads
Film.The single thin film can be transferred to other substrate surfaces；
4) according to step 1) result of structure design, dielectric layer (5) is prepared by atomic layer lamination method.
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Cited By (6)
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| CN108303758A (en) * | 2018-01-29 | 2018-07-20 | 江苏师范大学 | A kind of visible infrared band broad band absorber and preparation method thereof |
| CN108919391A (en) * | 2018-06-14 | 2018-11-30 | 国家纳米科学中心 | Based on metallic film-nucleocapsid plasma structure broadband perfect absorber |
| CN109188578A (en) * | 2018-09-25 | 2019-01-11 | 武汉大学 | A kind of infrared broad spectrum light absorber based on semiconductor material |
| CN109972103A (en) * | 2019-02-25 | 2019-07-05 | 中山大学 | A kind of width angle solar spectral selection absorbing membrane and preparation method thereof |
| CN115248469A (en) * | 2022-07-11 | 2022-10-28 | 中国科学院上海技术物理研究所 | Long-wave infrared broadband absorption structure |
| CN116219397A (en) * | 2022-12-16 | 2023-06-06 | 郑州航空工业管理学院 | Stealth film based on vanadium dioxide phase change characteristics and preparation method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108303758A (en) * | 2018-01-29 | 2018-07-20 | 江苏师范大学 | A kind of visible infrared band broad band absorber and preparation method thereof |
| CN108919391A (en) * | 2018-06-14 | 2018-11-30 | 国家纳米科学中心 | Based on metallic film-nucleocapsid plasma structure broadband perfect absorber |
| CN108919391B (en) * | 2018-06-14 | 2020-11-20 | 国家纳米科学中心 | Broadband perfect absorber based on metal film-core-shell plasma structure |
| CN109188578A (en) * | 2018-09-25 | 2019-01-11 | 武汉大学 | A kind of infrared broad spectrum light absorber based on semiconductor material |
| CN109188578B (en) * | 2018-09-25 | 2020-09-08 | 武汉大学 | Infrared broad spectrum light absorber based on semiconductor material |
| CN109972103A (en) * | 2019-02-25 | 2019-07-05 | 中山大学 | A kind of width angle solar spectral selection absorbing membrane and preparation method thereof |
| CN115248469A (en) * | 2022-07-11 | 2022-10-28 | 中国科学院上海技术物理研究所 | Long-wave infrared broadband absorption structure |
| CN115248469B (en) * | 2022-07-11 | 2023-09-12 | 中国科学院上海技术物理研究所 | Long-wave infrared broadband absorption structure |
| CN116219397A (en) * | 2022-12-16 | 2023-06-06 | 郑州航空工业管理学院 | Stealth film based on vanadium dioxide phase change characteristics and preparation method thereof |
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