CN108336505B - Terahertz waveband broadband polarization insensitive metamaterial - Google Patents
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
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Abstract
The invention discloses a terahertz waveband broadband polarization insensitive metamaterial, which comprises a metal thin film reflecting layer, an intermediate dielectric layer and a graphical material layer, wherein the intermediate dielectric layer is positioned between the metal thin film reflecting layer and the graphical material layer; the imaging material layer is formed by arranging a metal wafer stacking structure, the metal wafer stacking structure is sequentially stacked with a first composite wafer, a first medium, a second composite wafer, a second medium and a third composite wafer from bottom to top, the radius of each layer of composite wafer is sequentially reduced from bottom to top, the radius of the first medium is the same as that of the second composite wafer, and the radius of the second medium is the same as that of the third composite wafer; each composite disc responds to one absorption peak. The invention overcomes the defects of complex structure, difficult manufacturing and the like of the existing terahertz waveband wave-absorbing material, and overcomes the defect that corners are not easy to form in the preparation of metamaterials by using the wafer-shaped graph.
Description
Technical Field
The invention relates to the field of electromagnetic communication, in particular to a terahertz waveband broadband polarization insensitive metamaterial.
Background
Terahertz waves refer to electromagnetic waves with frequencies ranging from 0.1THz to 10THz, and are also called far infrared, submillimeter waves, ultra-micro waves and the like. The development of the infrared band and the microwave band on two sides of the terahertz wave is relatively mature, and the knowledge and research on the terahertz band are still very limited.
The development of terahertz science needs many electromagnetic functional devices, such as THz wave sources, lenses, switches, modulators, sensors, phase shifters, beam bunching devices and the like, however, materials capable of controlling terahertz waves in nature are expensive and rare, and the development of terahertz is limited.
Terahertz waves have many advantages: (1) transient property: the typical pulse width of the broadband terahertz wave is in the sub-picosecond magnitude, so that the broadband terahertz wave can be used for high-resolution research in the sub-picosecond and femtosecond magnitude, and particularly for the research on the change of semiconductor carriers. (2) Broad band property: the frequency band of the terahertz wave covers the range from 0.1THz to 10THz, the wave band contains the rotation and vibration energy levels of most molecules, many important organic molecules show extremely strong absorption and dispersion characteristics to terahertz frequency, and simultaneously, the plasma frequency of a semiconductor material is also in the wave band, and the spectral characteristics determine that the terahertz wave can be developed in the fields of biology, chemistry, semiconductors and the like. (3) Coherence: the excitation of terahertz waves is generated by coherent current-driven dipole oscillation or coherent laser pulses through nonlinear optical difference frequency, and has high temporal and spatial coherence. The existing terahertz time-domain spectroscopy technology can directly measure the amplitude and the phase of an oscillating electromagnetic field, and the characteristic has great advantage in the research of the transient coherent dynamics problem of materials. (4) Low energy performance: the photon energy of the electromagnetic wave with the frequency of 1THz is only about 4meV and about one millionth of the energy of X-ray photons, so that the ionization effect on a measurement sample is not generated, and the method is not only favorable for biopsy of biological tissues, but also has breakthrough significance on harmless safety inspection.
"metamaterial" generally refers to a conformable material having properties and characteristics not possessed by the original constituent parts, which possesses extraordinary physical properties (often not possessed by materials of nature); the properties are often not primarily determined by the intrinsic properties of the constituent materials, but rather by the artificial structure therein. In addition, the plasma frequency of the semiconductor falls on the terahertz waveband, and the terahertz molecular probe has unique advantages for researching the structure of biomacromolecules, intermolecular reaction, interaction between molecules and the environment and the like.
The research of the metamaterial is very important for terahertz science. The development of terahertz science still needs many electromagnetic functional devices, such as THz wave sources, lenses, switches, modulators, sensors, phase shifters, beam bunching devices and the like, however, materials capable of controlling terahertz waves in nature are expensive and rare, and metamaterial functional devices are expected to meet the requirements of terahertz development. In the terahertz wave band, through reasonable artificial design, the terahertz detection device based on the metamaterial absorption structure can well absorb terahertz radiation, and the defect that traditional infrared bolometers, pyroelectric detectors and other pyroelectric detectors are poor in terahertz wave band absorption is effectively overcome.
Since L andy proposed a perfect absorber model in 2008, the structure of the metamaterial absorber is generally a metal film layer, a dielectric layer and a metal pattern layer.
The metamaterial with the broadband absorption characteristic can be applied to the fields of invisible cloak, atmospheric environment monitoring, drug monitoring, medical imaging, genetic inspection and the like.
The existing wave-absorbing metamaterial mostly adopts an annular or opening resonant ring with corners, the width of a line is narrow, and the structure is complex and the manufacturing is difficult to achieve the polarization insensitivity or broadband absorption.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, provides a terahertz waveband broadband polarization insensitive metamaterial, overcomes the defects of complex structure, difficult manufacturing and the like of the existing terahertz waveband wave-absorbing material, and avoids the defect that corners are difficult to form in metamaterial preparation by using a wafer-shaped graph.
The purpose of the invention is realized by the following technical scheme: a terahertz waveband broadband polarization insensitive metamaterial comprises a metal film reflecting layer, a middle dielectric layer and a graphical material layer, wherein the middle dielectric layer is positioned between the metal film reflecting layer and the graphical material layer;
the imaging material layer is formed by arranging a metal wafer stacking structure, the metal wafer stacking structure is sequentially stacked with a first composite wafer, a first medium, a second composite wafer, a second medium and a third composite wafer from bottom to top, the radius of each layer of composite wafer is sequentially reduced from bottom to top, the radius of the first medium is the same as that of the second composite wafer, and the radius of the second medium is the same as that of the third composite wafer; each composite disc responds to one absorption peak.
Further, the first composite disk of the metal disk stack structure has five radii from large to small, which are respectively R1, R2, R3, R4 and R5.
Further, the patterning material layer comprises 25 metal wafer stacking structures, and each row and each column of the patterning material layer are provided with 5 metal wafer stacking structures; the radiuses of the first composite disks of each row of metal disk stacking structures are adjacently arranged according to the circulation sequence of R1-R2-R3-R4-R5-R1, the radius of the first composite disk of each row of initial metal disk stacking structures is the radius of the first composite disk of the third metal disk stacking structure behind the initial metal disk stacking structure of the previous row, and the distances between the centers of the first composite disks of each row of metal disk stacking structures are the same.
Further, R1, R2, R3, R4 and R5 are respectively 9 μm, 8.6 μm, 8.2 μm, 8.0 μm and 7.9 μm.
Furthermore, the radius of the first composite wafer is 0.8 mu m larger than that of the second composite wafer, and the radius of the second composite wafer is 1.6 mu m larger than that of the third composite wafer.
Further, the thickness of the metal film reflecting layer is 200nm, the thickness of the middle dielectric layer is 1.4 μm, the thicknesses of the first composite wafer, the second composite wafer and the third composite wafer are all 200nm, and the thicknesses of the first medium and the second medium are 2 μm.
Furthermore, the area of the metal thin film reflecting layer is the area of the whole metamaterial, and the length and the width of the metal thin film reflecting layer are both 100 micrometers.
Furthermore, the connection line of the centers of the first composite wafer, the second composite wafer and the third composite wafer is perpendicular to the plane of the metal film reflection layer.
Furthermore, the metal film reflecting layer, the first composite wafer, the second composite wafer and the third composite wafer are all made of gold.
Furthermore, the intermediate dielectric layer, the first dielectric and the second dielectric are all made of polyimide PI.
The invention has the beneficial effects that:
according to the terahertz waveband broadband polarization insensitive metamaterial provided by the invention, when incident waves vertically enter from one side of the metal wafer stacking structure of the metamaterial, a large amount of reverse charges are accumulated at the upper end and the lower end of the composite wafer, and a pure electric response is generated on the metal wafer stacking structure. The wafer structure is strongly coupled with the reverse electric response on the metal film to generate a magnetic response, so that an obvious trough appears on the reflectivity spectral line, and a perfect absorption peak is corresponded. Meanwhile, the composite wafer arrangement and the multilayer stacking structure are overlapped with a plurality of absorption layers, so that the bandwidth is widened. The special arrangement and the symmetry of the wafer make the structure achieve the effect of insensitive polarization.
Drawings
FIG. 1 is a structural side view of a terahertz waveband broadband polarization insensitive metamaterial provided by the invention:
fig. 2 is a top view of the metal wafer stacking unit structure provided by the present invention:
FIG. 3 is a top view of a terahertz waveband broadband polarization insensitive metamaterial structure provided by the invention:
fig. 4 is a numerical simulated absorption plot of a single layer composite wafer structure:
FIG. 5 is a numerical simulated absorption plot of a two-layer composite wafer structure:
FIG. 6 is a numerical simulated absorption plot of a three-layer composite wafer structure;
in the figure, 1-a metal film reflecting layer, 2-an intermediate dielectric layer, 3-a patterned material layer, 4-a first composite wafer, 5-a first medium, 6-a second composite wafer, 7-a second medium, and 8-a third composite wafer.
Detailed Description
The technical scheme of the invention is further described in detail by combining the attached drawings:
as shown in fig. 1, a terahertz waveband broadband polarization insensitive metamaterial, as shown in fig. 1, fig. 2 and fig. 3, includes a metal thin film reflective layer 1, an intermediate dielectric layer 2 and a patterned material layer 3, wherein the intermediate dielectric layer 2 is located between the metal thin film reflective layer 1 and the patterned material layer 3. The material is a periodic structure with an overall cell size of 100 μm x 100 μm, the area of the metallic thin film reflective layer 1 being the area of the entire metamaterial.
Preferably, in this embodiment, as shown in fig. 1, the thickness H1 of the metal thin film reflective layer 1 is 200nm, and the thickness H2 of the middle dielectric layer 2 is 1.4 μm.
The patterned material layer 3 is formed by arranging metal wafer stacking structures, the structural size of each stacking structure is 20 micrometers x 20 micrometers, the metal wafer stacking structures are sequentially stacked with a first composite wafer 4, a first medium 5, a second composite wafer 6, a second medium 7 and a third composite wafer 8 from bottom to top, the radius of each layer of composite wafer is sequentially reduced from bottom to top, the radius of the first medium 5 is the same as that of the second composite wafer 6, and the radius of the second medium 7 is the same as that of the third composite wafer 8; each composite disc responds to one absorption peak. Preferably, the connection line of the centers of the first composite wafer 4, the second composite wafer 6 and the third composite wafer 8 is perpendicular to the plane of the metal film reflective layer 1.
Specifically, the radius of the first composite wafer 4 is 0.8 μm larger than that of the second composite wafer 6, and the radius of the second composite wafer 6 is 1.6 μm larger than that of the third composite wafer 8; the thicknesses of the first composite disk 4, the second composite disk 6 and the third composite disk 8 are all 200nm, and the thicknesses H3 and H4 of the first medium 5 and the second medium 7 are all 2 μm, and the top view is shown in FIG. 2.
More preferably, in the present embodiment, the first composite disc 4 of the metal disc stack structure has five radii, from large to small: 9 μm for R1, 8.6 μm for R2, 8.2 μm for R3, 8.0 μm for R4 and 7.9 μm for R5; the distance B between the centers of the circles of each first composite wafer 4 is 20 μm, which is also the side length of the small square unit where each first composite wafer 4 is located.
The arrangement is shown in fig. 3: the graphical material layer 3 comprises 25 metal wafer stacking structures, and each row of the graphical material layer is provided with 5 metal wafer stacking structures; the radii of the first composite disks 4 of each row of metal disk stacked structures are adjacently arranged according to the cyclic sequence of R1-R2-R3-R4-R5-R1, and the radius of the first composite disk 4 of each row of the initial metal disk stacked structure is the radius of the first composite disk 4 of the third metal disk stacked structure after the previous row of the initial metal disk stacked structures.
Preferably, in this embodiment, the materials of the metal thin film reflective layer 1, the first composite wafer 4, the second composite wafer 6 and the third composite wafer 8 all have an electrical conductivity σ of 4.09x107S/m gold. The intermediate dielectric layer 2, the first dielectric 5 and the second dielectric 7 are all made of materials with relative dielectric constants of
And (3) polyimide PI.
The graphical material layer 3 is a metal wafer stacking structure and comprises three layers of composite metal wafers and two layers of media with different thicknesses, and the composite wafers, the media and the composite wafers are stacked in sequence from large to small according to the structural radius of the composite wafers, so that the purpose of increasing the bandwidth is achieved. The upper frequency selective surface is matched with the atmosphere in impedance within a specific frequency range, allows electromagnetic waves within the specific frequency range to pass through, is reflected by the bottom layer, and has resonance loss in the middle medium layer 2, so that high absorption is achieved. The invention achieves high broadband absorption, polarization insensitivity can be realized due to the special arrangement of the composite wafer layer, the defect that corners are not easy to form in metamaterial preparation is overcome by the wafer-shaped pattern, and the manufacture is convenient.
The terahertz waveband broadband polarization insensitive material is subjected to time domain algorithm simulation calculation in CSTCWAve Studio 2015 electromagnetic simulation software, under the condition of vertical incidence electromagnetic waves, the absorption spectrum of a single-layer composite wafer metamaterial structure is shown in fig. 4, two layers are shown in fig. 5, and three layers are shown in fig. 6. The absorption rate is calculated by the formula of A-1-S11 2-S21 2In the formula S11Is an analog value of the reflection coefficient, S12Is an analog value of the projection coefficient. When electromagnetic waves enter a specific frequency band, the reflectivity of the frequency band is close to 0 due to the resonance absorption effect of the metamaterial, and the transmission rate is 0 due to the fact that the metal thin film reflection layer 1 completely reflects the electromagnetic waves, so that the perfect absorption of nearly 100% is achieved. The following compares three layers with one and two layers:
when only one layer of composite wafer is arranged on the metal film reflecting layer 1 and the middle medium layer 2, the frequency bandwidth of the absorption rate of more than 80 percent reaches 0.8THz (the frequency band is 4.6-5.4 THz), and the maximum absorption rate reaches 99.99 percent.
When the metal film reflecting layer 1 and the middle medium layer 2 are provided with the structures of the first layer, the second layer composite wafer and the first medium 5, the frequency bandwidth of the absorption rate of more than 80 percent reaches 1.6THz (the frequency band is 4.7-6.3 THz), and the maximum absorption rate reaches 99.99 percent.
When a three-layer composite original sheet structure is adopted (i.e., the content of the embodiment), the frequency bandwidth of the absorption rate of more than 80% reaches 2.7THz (the frequency band is 4.7-7.4 THz), and the maximum absorption rate reaches 99.99%.
While the present invention has been described by way of examples, and not by way of limitation, other variations of the disclosed embodiments, as would be readily apparent to one of skill in the art, are intended to be within the scope of the present invention, as defined by the claims.
Claims (8)
1. A terahertz waveband broadband polarization insensitive metamaterial comprises a metal film reflecting layer, a middle dielectric layer and a graphical material layer, wherein the middle dielectric layer is positioned between the metal film reflecting layer and the graphical material layer;
the method is characterized in that: the imaging material layer is formed by arranging a metal wafer stacking structure, the metal wafer stacking structure is sequentially stacked with a first composite wafer, a first medium, a second composite wafer, a second medium and a third composite wafer from bottom to top, the radius of each layer of composite wafer is sequentially reduced from bottom to top, the radius of the first medium is the same as that of the second composite wafer, and the radius of the second medium is the same as that of the third composite wafer; each composite disc responds to an absorption peak;
the first composite wafer of the metal wafer stacking structure has five radii which are respectively R1, R2, R3, R4 and R5 from large to small;
the graphical material layer comprises 25 metal wafer stacking structures, and each row of the graphical material layer is provided with 5 metal wafer stacking structures; the radiuses of the first composite disks of each row of metal disk stacking structures are adjacently arranged according to the circulation sequence of R1-R2-R3-R4-R5-R1, the radius of the first composite disk of each row of initial metal disk stacking structures is the radius of the first composite disk of the third metal disk stacking structure behind the initial metal disk stacking structure of the previous row, and the distances between the centers of the first composite disks of each row of metal disk stacking structures are the same.
2. The terahertz waveband broadband polarization insensitive metamaterial according to claim 1, wherein: the R1, R2, R3, R4 and R5 are respectively 9 μm, 8.6 μm, 8.2 μm, 8.0 μm and 7.9 μm.
3. The terahertz waveband broadband polarization insensitive metamaterial according to claim 1, wherein: the radius of the first composite wafer is 0.8 mu m larger than that of the second composite wafer, and the radius of the second composite wafer is 1.6 mu m larger than that of the third composite wafer.
4. The terahertz waveband broadband polarization insensitive metamaterial according to claim 1, wherein: the thickness of the metal film reflecting layer is 200nm, the thickness of the middle medium layer is 1.4 mu m, the thicknesses of the first composite wafer, the second composite wafer and the third composite wafer are all 200nm, and the thicknesses of the first medium and the second medium are 2 mu m.
5. The terahertz waveband broadband polarization insensitive metamaterial according to claim 1, wherein: the area of the metal film reflecting layer is the area of the whole metamaterial, and the length and the width of the metal film reflecting layer are both 100 micrometers.
6. The terahertz waveband broadband polarization insensitive metamaterial according to claim 1, wherein: the connection line of the circle centers of the first composite wafer, the second composite wafer and the third composite wafer is vertical to the plane of the metal film reflecting layer.
7. The terahertz waveband broadband polarization insensitive metamaterial according to claim 1, wherein: the metal film reflecting layer, the first composite wafer, the second composite wafer and the third composite wafer are all made of gold.
8. The terahertz waveband broadband polarization insensitive metamaterial according to claim 1, wherein: the middle medium layer, the first medium and the second medium are all made of polyimide PI.
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| CN109309286B (en) * | 2018-08-23 | 2021-06-08 | 南京邮电大学 | Polarization-insensitive ultra-wideband terahertz wave absorber with multilayer structure |
| CN109613635B (en) * | 2019-01-15 | 2024-04-02 | 桂林电子科技大学 | Novel ultra-narrow band wave absorber with metal nano ring column array structure |
| CN113745842B (en) * | 2021-08-23 | 2023-12-26 | 东风汽车集团股份有限公司 | Metamaterial wave-absorbing structure applied to millimeter wave radar and vehicle antenna thereof |
| CN114460673B (en) * | 2022-01-21 | 2023-05-26 | 中南大学 | High-temperature solar spectrum selective absorber based on plasmon resonance and preparation method thereof |
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| CN103181025A (en) * | 2010-04-12 | 2013-06-26 | 塔夫茨大学 | Silk electronic components |
| CN103296433A (en) * | 2012-02-29 | 2013-09-11 | 深圳光启创新技术有限公司 | Metamaterial |
| CN103346409A (en) * | 2013-06-06 | 2013-10-09 | 电子科技大学 | Intermediate infrared multi-band frequency and broadband periodicity microwave absorption structure based on medium modulation |
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| CN106058484A (en) * | 2016-07-08 | 2016-10-26 | 西安电子科技大学 | Broadband electromagnetic wave-absorbing material with multilayer structure |
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