CN108336505A - A kind of insensitive Meta Materials of terahertz wave band broadband polarization - Google Patents
A kind of insensitive Meta Materials of terahertz wave band broadband polarization Download PDFInfo
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- CN108336505A CN108336505A CN201810096060.6A CN201810096060A CN108336505A CN 108336505 A CN108336505 A CN 108336505A CN 201810096060 A CN201810096060 A CN 201810096060A CN 108336505 A CN108336505 A CN 108336505A
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- 239000000463 material Substances 0.000 title claims abstract description 65
- 230000010287 polarization Effects 0.000 title claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 93
- 239000002184 metal Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 238000010521 absorption reaction Methods 0.000 claims abstract description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 2
- 230000007812 deficiency Effects 0.000 abstract description 3
- 239000011358 absorbing material Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 60
- 239000010408 film Substances 0.000 description 17
- 230000009102 absorption Effects 0.000 description 12
- 238000004088 simulation Methods 0.000 description 5
- 238000011160 research Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
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- 238000002310 reflectometry Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
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- 229940079593 drug Drugs 0.000 description 1
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- 238000003384 imaging method Methods 0.000 description 1
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- 229910052711 selenium Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
Abstract
The invention discloses a kind of insensitive Meta Materials of terahertz wave band broadband polarization, including metal film reflector layer, middle dielectric layer and patterned material layer, and the middle dielectric layer is between metal film reflector layer and patterned material layer；The patterned material layer is arranged by metal disk stacked structure, the metal disk stacked structure has stacked gradually the first compound disk, first medium, the second compound disk, second medium and the compound disk of third from bottom to up, every layer of compound wafer radius is reduced successively from the bottom up, and first medium is identical as the radius of the second compound disk, second medium is identical as the radius of the compound disk of third；Each compound disk responds an absorption peak.The present invention solves that existing terahertz wave band absorbing material is complicated, makes difficult etc. deficiency, while having evaded the drawbacks of turning is not easy to shape in prepared by Meta Materials using the figure of disc-shaped.
Description
Technical field
The present invention relates to electromagnetic communication field more particularly to a kind of insensitive Meta Materials of terahertz wave band broadband polarization.
Background technology
THz wave refers to electromagnetic wave of the frequency in 0.1THz to 10THz ranges, and Terahertz is also known as far infrared, submillimeter
Wave, ultramicrowave etc..Infrared band and the microwave band development of THz wave both sides are relatively ripe, recognize terahertz wave band
Know and research is still very limited.
Terahertz the reach of science needs many function solenoid devices, such as THz wave sources, lens, switch, modulator, biography
Sensor, phase-shifter and pack device etc., however nature can manipulate the material expensive of THz wave and rare, cause Terahertz
Development is limited.
THz wave has many good qualities：(1) transient state：The typical pulse-widths of wideband THz wave are in subpicosecond magnitude, therefore
It can be used for the high-resolution research of subpicosecond, femtosecond magnitude, especially study the variation of semiconductor carriers.(2) broadband property：
Its frequency band covers the range from 0.1THz to 10THz, which contains rotation and the vibration level of most of molecules, many
Important organic molecule shows extremely strong absorption and dispersion characteristics to Terahertz frequency, meanwhile, the plasma of semi-conducting material
For body frequency also in the wave band, these spectral characteristics determine that THz wave will be in the fields such as biology, chemistry, semiconductor great Zhan bodies
Hand.(3) coherence：The excitation of THz wave is to dissipate one's fortune life either by relevant laser by the dipole arrays for the electric current driving that is concerned with
Pulse is generated by nonlinear difference frequency generation, has very high time and spatial coherence.Existing terahertz time-domain spectroscopy skill
Art can directly measure the amplitude and phase of oscillating electromagnetic fields, this feature is when the transient state of research material is concerned with dynamics problem
With great advantage.(4) low energy：Frequency is the photon energy only about 4meV, about X-ray light of the electromagnetic wave of 1THz
The part per trillion of sub- energy, therefore ionization will not be generated to measuring sample, this not only contributes to live to biological tissue
Physical examination is looked into, and has breakthrough meaning to harmless safety inspection.
What " Meta Materials " were often referred to a kind of attribute possessed not available for initial component part and feature meets material,
With extraordinary physical property (often in the material of nature not available)；Property does not often determine mainly and constitutes material
The intrinsic properties of material, and it is decided by artificial structure therein.In addition, the plasma frequency of semiconductor is fallen in THz wave more
Section has unique advantage to structure, intermolecular reaction, the interaction of molecule and environment etc. of studying large biological molecule.
The research of Meta Materials is particularly significant for Terahertz science.It is still necessary to many function solenoid devices for Terahertz the reach of science
Part, such as THz wave sources, lens, switch, modulator, sensor, phase-shifter and pack device etc., however nature can manipulate too
The material expensive of Hertz wave and it is rare, and the needs of Meta Materials function element is expected to meet Terahertz development.In terahertz wave band,
By rational artificial design, the terahertz detection device based on Meta Materials absorbing structure can generate terahertz emission good
Absorption, effectively compensate for the pyroelectric detectors such as traditional infrared bolometer, pyroelectricity terahertz wave band absorb it is bad
Disadvantage.
From after Landy in 2008 proposes perfect absorber model, the structure of the design of meta-material absorber is generally：One layer
Metal film layer, one layer of dielectric layer, one layer of metal pattern layer.
Meta Materials with wide band absorption characteristic can be applied in stealthy cape, atmosphere environment supervision, drugs monitoring, medicine
The fields such as imaging, genetic test.
Present absorbing meta-material mostly uses ring-type or the split ring resonator with turning, and line thickness is narrow, and to reach
The insensitive or wide band absorption that polarizes can cause complicated, make difficult result.
Invention content
It is insensitive super that it is an object of the invention to overcome the deficiencies of the prior art and provide a kind of terahertz wave band broadband polarizations
Material, solves that existing terahertz wave band absorbing material is complicated, makes difficult etc. deficiency, while utilizing disk
The figure of shape has evaded the drawbacks of turning is not easy to shape in prepared by Meta Materials.
The purpose of the present invention is achieved through the following technical solutions：A kind of terahertz wave band broadband polarization is insensitive super
Material, including metal film reflector layer, middle dielectric layer and patterned material layer, the middle dielectric layer are located at metallic film
Between reflecting layer and patterned material layer；
The patterned material layer is arranged by metal disk stacked structure, the metal disk stacked structure from
Under it is supreme stacked gradually the first compound disk, first medium, the second compound disk, second medium and the compound disk of third, often
The compound wafer radius of layer is reduced successively from the bottom up, and first medium is identical with the radius of the second compound disk, second medium and
The radius of the compound disk of third is identical；Each compound disk responds an absorption peak.
Further, there are five types of radiuses altogether for the first compound disk of the metal disk stacked structure, from greatly to small point
It Wei not R1, R2, R3, R4 and R5.
Further, the patterned material layer includes 25 metal disk stacked structures, and each row and column have 5 gold
Belong to disk stacked structure；The radius of first compound disk of each row metal disk stacked structure presses R1-R2-R3-R4-R5-R1
Circular order arranged adjacent, and the radius of the first compound disk of each start of line metal disk stacked structure be lastrow rise
The radius of first compound disk of third metal disk stacked structure, each metal disk heap after beginning metal disk stacked structure
Distance is identical between the first compound disk center of circle of stack structure.
Further, described R1, R2, R3, R4, R5 are respectively 9 μm, 8.6 μm, 8.2 μm, 8.0 μm, 7.9 μm.
Further, the radius of the second compound disk of radius ratio of the first compound disk is 0.8 μm big, the second compound disk
The radius of the compound disk of radius ratio third is 1.6 μm big.
Further, the thickness of the metal film reflector layer is 200nm, and the thickness of the middle dielectric layer is
1.4 μm, the thickness of the first compound disk, the second compound disk and the compound disk of third is 200nm, and first medium and second are situated between
The thickness of matter is 2 μm.
Further, the area of the metal film reflector layer is the area of entire Meta Materials, and length and width is
100μm。
Further, the circle center line connecting of the first compound disk, the second compound disk and the compound disk of third is vertical
The plane where metal film reflector layer.
Further, the metal film reflector layer, the first compound disk, the second compound disk and the compound disk of third
Material be gold.
Further, the material of the middle dielectric layer, first medium and second medium is polyimides PI.
The beneficial effects of the invention are as follows：
The insensitive Meta Materials of terahertz wave band broadband polarization provided by the invention, when incidence wave is from the metal disk of Meta Materials
When the vertical incidence of stacked structure side, a large amount of reversed charge is had accumulated in compound disk upper and lower ends, is stacked in metal disk
A pure electroresponse is produced in structure.With the reversed electroresponse on metal film strong coupling occurs for wafer architecture, produces
A raw magnetic response leads to occur an apparent trough on reflectivity spectral line, a corresponding perfect absorption peak.Meanwhile it is multiple
It is exactly to be superimposed several this absorptions to close disk arrangement and multilayer lamination structure, has widened bandwidth.Special arrangement adds disk
The symmetry of itself makes the structure achieve the effect that polarization is insensitive.
Description of the drawings
Fig. 1 is the insensitive metamaterial structure side view of terahertz wave band broadband polarization provided by the invention：
Fig. 2 is metal disk stackable unit structure top view provided by the invention：
Fig. 3 is the insensitive metamaterial structure vertical view of terahertz wave band broadband polarization provided by the invention：
Fig. 4 is the numerical simulation absorption figure of the compound wafer architecture of single layer：
Fig. 5 is the numerical simulation absorption figure of two layers of compound wafer architecture：
Fig. 6 is the numerical simulation absorption figure of three layers of compound wafer architecture；
In figure, 1- metal film reflector layers, 2- middle dielectric layers, 3- patterned material layers, the first compound disks of 4-, 5-
One medium, the second compound disks of 6-, 7- second mediums, the compound disk of 8- thirds.
Specific implementation mode
Technical scheme of the present invention is described in further detail below in conjunction with the accompanying drawings：
As shown in Figure 1, a kind of insensitive Meta Materials of terahertz wave band broadband polarization, as shown in Figure 1, Figure 2 and Figure 3, including
Metal film reflector layer 1, middle dielectric layer 2 and patterned material layer 3, the middle dielectric layer 2 are located at metal film reflector
Between layer 1 and patterned material layer 3.The material is periodic structure, and an integral unit size is 100 μm of 100 μm of X, metal
The area of thin film reflective layer 1 is the area of entire Meta Materials.
More preferably, in the present embodiment, as shown in Figure 1, the thickness H1 of the metal film reflector layer 1 is 200nm, institute
The thickness H2 for the middle dielectric layer 2 stated is 1.4 μm.
Wherein, the patterned material layer 3 is arranged by metal disk stacked structure, the structure of each stacked structure
Size is 20 μm of 20 μm of X, and the metal disk stacked structure has stacked gradually the first compound disk 4, first Jie from bottom to up
Matter 5, the second compound disk 6, second medium 7 and the compound disk 8 of third, every layer of compound wafer radius are reduced successively from the bottom up,
And first medium 5 is identical as the radius of the second compound disk 6, the radius of the compound disk of second medium 7 and third 8 is identical；Each
Compound disk responds an absorption peak.Preferably, the first compound disk 4, the second compound disk 6 and the compound disk of third
8 circle center line connecting is perpendicular to 1 place plane of metal film reflector layer.
Specifically, the radius of the second compound disk 6 of radius ratio of the first compound disk 4 is 0.8 μm big, the second compound disk 6
The compound disk of radius ratio third 8 radius it is 1.6 μm big；First compound disk 4, the second compound disk 6 and the compound disk of third 8
Thickness be 200nm, the thickness H3 and H4 of first medium 5 and second medium 7 are 2 μm, and vertical view is as shown in Figure 2.
More preferably, in the present embodiment, there are five types of half altogether for the first compound disk 4 of the metal disk stacked structure
Diameter, from greatly to small difference：R1 is 9 μm, R2 is 8.6 μm, R3 is 8.2 μm, R4 is 8.0 μm and R5 is 7.9 μm；Each first is compound
The length of side of square junior unit where spacing B is 20 μm and each first compound disk 4 between 4 center of circle of disk.
Its arrangement mode is as shown in Figure 3：The patterned material layer 3 includes 25 metal disk stacked structures, is often gone
Each column has 5 metal disk stacked structures；The radius of first compound disk 4 of each row metal disk stacked structure presses R1-
The circular order arranged adjacent of R2-R3-R4-R5-R1, and the first compound disk 4 of each start of line metal disk stacked structure
Radius be lastrow starting metals disk stacked structure after third metal disk stacked structure the first compound disk 4 partly
Diameter.
More preferably, in the present embodiment, the metal film reflector layer 1, the first compound disk 4, the second compound disk 6
Material with the compound disk of third 8 is conductivityσ=4.09x107The gold of S/m.And the middle dielectric layer 2, first is situated between
The material of matter 5 and second medium 7 is that relative dielectric constant isPolyimides PI.
Wherein, patterned material layer 3 is metal disk stacked structure, including three layers composite metal disk, two layers of different thickness
The medium of degree is stacked according to the descending sequence of the structure radius of the compound compound disk of disk-medium-, to reach increase bandwidth
Purpose.Upper layer frequency-selective surfaces are matched in particular frequency range internal impedance with air, allow the electromagnetism of particular frequency range
Wave passes through, then is reflected through bottom, is lost in 2 internal resonance of middle dielectric layer, reaches high-selenium corn.Invention achieves the suctions of broadband height
It receives, and due to the specific configuration of compound disk layer, can accomplish to polarize insensitive, the figure of disc-shaped has evaded Meta Materials system
The drawbacks of standby middle turning is not easy to shape, facilitates making.
The above-mentioned insensitive material of terahertz wave band broadband polarization passes through 2015 Electromagnetic Simulations of CSTMicrowave Studio
Time-Domain algorithm simulation in software calculates, in the case of vertical incidence electromagnetic wave, the suction of the compound disk metamaterial structure of single layer
Frequency spectrum is received as shown in figure 4, double-deck as shown in figure 5, three layers as shown in Figure 6.The calculation formula of absorptivity is A=1-S11 2-S21 2, formula
Middle S11For the analogue value of reflectance factor, S12For the analogue value of projection coefficient.When electromagnetic wave incident, in special frequency band, due to super
The resonant absorption effects of material so that the reflectivity of the frequency band is close to 0, and since metal film reflector layer 1 is fully reflective
Electromagnetic wave, transmissivity 0, perfect to realize intimate 100% absorb.Following the description carries out three layers and one layer and two layers
Comparison：
When there was only one layer of compound disk on metal film reflector layer 1 and middle dielectric layer 2, absorptivity is 80% or more
Frequency bandwidth reaches 0.8THz (frequency range is 4.6~5.4THz), and maximum absorbance is up to 99.99%.
When having first layer and the compound disk of the second layer and first medium 5 on metal film reflector layer 1 and middle dielectric layer 2
Structure, absorptivity reach 1.6THz (frequency range is 4.7~6.3THz) in 80% or more frequency bandwidth, and maximum absorbance is up to
99.99%.
And when using three layers of compound former chip architecture (content of the present embodiment), bandwidth of the absorptivity 80% or more
Degree reaches 2.7THz (frequency range is 4.7~7.4THz), and maximum absorbance is up to 99.99%.
The present invention is described by embodiment, but is not limited the invention, with reference to description of the invention, institute
Other variations of disclosed embodiment, are such as readily apparent that the professional person of this field, such variation should belong to
Within the scope of the claims in the present invention limit.
Claims (10)
1. a kind of insensitive Meta Materials of terahertz wave band broadband polarization, including metal film reflector layer, middle dielectric layer and figure
Change material layer, the middle dielectric layer is between metal film reflector layer and patterned material layer；
It is characterized in that：The patterned material layer is arranged by metal disk stacked structure, the metal disk heap
It is compound that stack structure has stacked gradually the first compound disk, first medium, the second compound disk, second medium and third from bottom to up
Disk, every layer of compound wafer radius are reduced successively from the bottom up, and first medium is identical as the radius of the second compound disk, second
Medium is identical as the radius of the compound disk of third；Each compound disk responds an absorption peak.
2. a kind of insensitive Meta Materials of terahertz wave band broadband polarization according to claim 1, it is characterised in that：Described
There are five types of radiuses altogether for first compound disk of metal disk stacked structure, from greatly to small respectively R1, R2, R3, R4 and R5.
3. a kind of insensitive Meta Materials of terahertz wave band broadband polarization according to claim 2, it is characterised in that：Described
Patterned material layer includes 25 metal disk stacked structures, and each row and column have 5 metal disk stacked structures；The gold per a line
The radius for belonging to the first compound disk of disk stacked structure presses the circular order arranged adjacent of R1-R2-R3-R4-R5-R1, and every
The radius of first compound disk of a line starting metals disk stacked structure is the after lastrow starting metals disk stacked structure
The radius of first compound disk of three metal disk stacked structures, the first compound disk circle of each metal disk stacked structure
Distance is identical between the heart.
4. a kind of insensitive Meta Materials of terahertz wave band broadband polarization according to claim 2, it is characterised in that：Described
R1, R2, R3, R4, R5 are respectively 9 μm, 8.6 μm, 8.2 μm, 8.0 μm, 7.9 μm.
5. a kind of insensitive Meta Materials of terahertz wave band broadband polarization according to claim 1, it is characterised in that：First is multiple
The radius for closing the second compound disk of radius ratio of disk is 0.8 μm big, and the half of the compound disk of radius ratio third of the second compound disk
Diameter is 1.6 μm big.
6. a kind of insensitive Meta Materials of terahertz wave band broadband polarization according to claim 1, it is characterised in that：Described
The thickness of metal film reflector layer is 200nm, and the thickness of the middle dielectric layer is 1.4 μm, and the first compound disk, second are answered
The thickness for closing disk and the compound disk of third is 200nm, and the thickness of first medium and second medium is 2 μm.
7. a kind of insensitive Meta Materials of terahertz wave band broadband polarization according to claim 1, it is characterised in that：Described
The area of metal film reflector layer is the area of entire Meta Materials, and length and width is 100 μm.
8. a kind of insensitive Meta Materials of terahertz wave band broadband polarization according to claim 1, it is characterised in that：Described
The circle center line connecting of first compound disk, the second compound disk and the compound disk of third is flat where metal film reflector layer
Face.
9. a kind of insensitive Meta Materials of terahertz wave band broadband polarization according to claim 1, it is characterised in that：Described
Metal film reflector layer, the first compound disk, the second compound disk and the compound disk of third material be gold.
10. a kind of insensitive Meta Materials of terahertz wave band broadband polarization according to claim 1, it is characterised in that：It is described
Middle dielectric layer, first medium and second medium material be polyimides PI.
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Cited By (4)
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| CN109309286A (en) * | 2018-08-23 | 2019-02-05 | 南京邮电大学 | A kind of ultra wide band Terahertz wave absorbing device that the polarization of multilayered structure is insensitive |
| CN109613635A (en) * | 2019-01-15 | 2019-04-12 | 桂林电子科技大学 | A kind of novel ultra-narrow band wave absorbing device of metal nano annulated column array structure |
| CN113745842A (en) * | 2021-08-23 | 2021-12-03 | 东风汽车集团股份有限公司 | Metamaterial wave-absorbing structure applied to millimeter wave radar and vehicle antenna thereof |
| CN114460673A (en) * | 2022-01-21 | 2022-05-10 | 中南大学 | High-temperature solar spectrum selective absorber based on plasmon resonance and preparation method thereof |
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| CN109309286A (en) * | 2018-08-23 | 2019-02-05 | 南京邮电大学 | A kind of ultra wide band Terahertz wave absorbing device that the polarization of multilayered structure is insensitive |
| CN109309286B (en) * | 2018-08-23 | 2021-06-08 | 南京邮电大学 | Polarization-insensitive ultra-wideband terahertz wave absorber with multilayer structure |
| CN109613635A (en) * | 2019-01-15 | 2019-04-12 | 桂林电子科技大学 | A kind of novel ultra-narrow band wave absorbing device of metal nano annulated column array structure |
| CN109613635B (en) * | 2019-01-15 | 2024-04-02 | 桂林电子科技大学 | Novel ultra-narrow band wave absorber with metal nano ring column array structure |
| CN113745842A (en) * | 2021-08-23 | 2021-12-03 | 东风汽车集团股份有限公司 | Metamaterial wave-absorbing structure applied to millimeter wave radar and vehicle antenna thereof |
| CN113745842B (en) * | 2021-08-23 | 2023-12-26 | 东风汽车集团股份有限公司 | Metamaterial wave-absorbing structure applied to millimeter wave radar and vehicle antenna thereof |
| CN114460673A (en) * | 2022-01-21 | 2022-05-10 | 中南大学 | High-temperature solar spectrum selective absorber based on plasmon resonance and preparation method thereof |
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| CN108336505B (en) | 2020-07-28 |
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