CN110376667A - A kind of broadband electromagnetic wave absorber and preparation method thereof based on refractory material - Google Patents
A kind of broadband electromagnetic wave absorber and preparation method thereof based on refractory material Download PDFInfo
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- CN110376667A CN110376667A CN201910674105.8A CN201910674105A CN110376667A CN 110376667 A CN110376667 A CN 110376667A CN 201910674105 A CN201910674105 A CN 201910674105A CN 110376667 A CN110376667 A CN 110376667A
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 71
- 239000011819 refractory material Substances 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000002063 nanoring Substances 0.000 claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 22
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 16
- 239000011651 chromium Substances 0.000 claims abstract description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 6
- 239000010937 tungsten Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000000609 electron-beam lithography Methods 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 206010037660 Pyrexia Diseases 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 3
- 238000002848 electrochemical method Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000002164 ion-beam lithography Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000005672 electromagnetic field Effects 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 15
- 238000000862 absorption spectrum Methods 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Laminated Bodies (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The present invention provides a kind of broadband electromagnetic wave absorber and preparation method thereof based on refractory material.The broadband electromagnetic wave absorber is successively made of the three-decker of the metal nano ring of smooth metallic diaphragm, the dielectric nano-rings of division and division from bottom to top.Metal therein can be the refractory materials such as titanium, nickel, chromium or tungsten metal.Present invention process preparation it is simple mature, it can be achieved that large area the manufacturing.The characteristics of absorber of the invention under complicated electromagnetic field environment there is broadband perfection to absorb, thermal stability.
Description
Technical field
The present invention relates to materialogies and energy field, and in particular to a kind of broadband electro-magnetic wave absorption based on refractory material
Device and preparation method thereof.
Background technique
Broadband electromagnetic wave absorber is an indispensability for realizing solar spectral efficient absorption and broadband photodetection
One of device, principle are usually plasmon resonance, medium guided wave mode and spectrum phase coupling or cause phenomena such as relevant
The RESONANCE ABSORPTION or capture phenomenon of light wave.
Since 2008 report meta-material absorber, international academic community has started one new upsurge.Broadband
Absorber solar battery, heat radiation and in terms of have good application prospect.Up to the present, have excellent
The design of absorbent properties absorber has been achieved for huge progress.Many different types of absorbers are suggested, including single-frequency
Band, double frequency-band, multiband and broad band absorber.Meta-material absorber is mainly made of metal-dielectric-metal three-decker.It inhales
The performance for receiving device is not only determined by material itself, but also combines close phase with the shape of absorber material, size, arrangement and structure
It closes.Bottom metal layers are to prevent electromagnetic transmission (i.e. transmissivity is 0), and top metal structure is that matching absorber impedance inhibits reflection
(i.e. reflectivity is close to 0).To which according to absorptivity formula A=1-R-T, (wherein A represents absorptivity, and R represents reflectivity, T generation
Table transmissivity), the perfection that can obtain absorptivity close to 100% absorbs.Existing some broad band absorbers absorb often only one kind
Resonant wavelength, absorption band are relatively narrow.In addition, there are some defects for these absorber systems, as Absorber Bandwidth is relatively narrow, absorption efficiency
It is low, structure is complicated and it is poor using precious metal material and thermal stability to need.
Therefore, design and Implement broadband range it is perfect absorb depend only on it is simple to operation and can be with large area work
The problem that the metal-dielectric compound system of skill production faces solar absorption will have very important realistic meaning and answer
With value.
Summary of the invention
In order to solve the defect for the absorber mentioned in background technique, the present invention provides a kind of wide wave based on refractory material
Section electromagnetic wave absorber and preparation method thereof.
A kind of broadband electromagnetic wave absorber based on refractory material of the invention, comprising:
Smooth metal film；
The dielectric nano-rings of the dielectric nano-rings of division of the array on the metal film, the division refer to electric Jie
There are several gaps in matter nano-rings；
The metal nano ring of division in the dielectric nano-rings of the division, the metal nano ring of the division are set
Refer to that there are several gaps on metal nano ring.
Further, the dielectric nano-rings of the division include four equally distributed gaps, the metal of the division
Nano-rings include four equally distributed gaps.
Further, the thickness of the smooth metal film is more than 150 nanometers, and the material of the smooth metal film is
Titanium, nickel, chromium or tungsten.
Further, the dielectric nano-rings of the division with a thickness of 1-300 nanometers, the dielectric nanometer of the division
The material of ring is silica, aluminium oxide or magnesium fluoride.
Further, the metal nano ring thickness of the division is 1-300 nanometers, the material of the metal nano ring of the division
Material is titanium, nickel, chromium or tungsten.
Further, the internal diameter of the metal nano ring of the dielectric nano-rings and division of the division and outer diameter are protected
It holds unanimously, internal diameter is 1-300 nanometers, and outer diameter is 300-800 nanometers.
Further, the period of the array is greater than or equal to the outer diameter of the dielectric nano-rings of the division, makes score
The nanometer interannular holding split is not overlapped.
The preparation method of the above-mentioned broadband electromagnetic wave absorber based on refractory material, comprising the following steps:
(1) smooth substrate is provided；
(2) metallic diaphragm of specific thicknesses is deposited on substrate；
(3) dielectric membranous layer of specific thicknesses is deposited on step (2) metallic diaphragm obtained；
(4) metallic diaphragm of specific thicknesses is deposited on step (3) dielectric membranous layer obtained；
(5) it is performed etching using no mask electron beam lithography, focused-ion-beam lithography technology, obtains the metal nano of division
The array structure of the dielectric nano-rings of the array structure and division of ring；
(6) it is cleaned using dehydrated alcohol, acetone, obtains the broadband electromagnetic wave absorber based on refractory material.
Further, the substrate is quartz, glass, silicon wafer or organic film.
Further, the deposition method includes magnetron sputtering method, Vacuum Coating method, metal fever evaporation coating method, laser
The mixed method of one or more of pulsed deposition method, chemical plating method, atomic layer deposition method, electrochemical method.
Beneficial effects of the present invention:
1, material used in entire electromagnetic wave absorber all has effect resistant to high temperature, silica, aluminium oxide, fluorination
Magnesium, titanium, nickel, chromium, tungsten fusing point be 1650 DEG C, 2054 DEG C, 1248 DEG C, 1668 DEG C, 1445 DEG C, 1907 DEG C, 3422 DEG C respectively, because
This electromagnetic wave absorber has thermal stability resistant to high temperature, it is possible to prevente effectively from it is previous it is common based on noble metal granule array or
The inherent metal ohmic that the perfect light absorber of multi-element metal resonance array composite construction etc. systems composition can not overcome is lost,
The problems such as fuel factor and thermal instability；
2, the strong electromagnetic resonance mode having by using piece of refractory metal material and broadband Resonance Absorption Properties are realized
The perfection of near-infrared to middle infrared band absorbs；
3, the characteristic of the metal/dielectric nano-rings periodic arrangement based on division, can generate multiple frequency ranges it is equal from
Plasmon resonance mode, and then obtain broadband electromagnetic wave perfection absorption characteristic；
4, used metal material is that the earth contains refractory material abundant, low in cost, in solar cell, hot spoke
It penetrates, is stealthy, the fields such as infrared imaging are all with a wide range of applications；
5, it realizes that highly efficient solar energy inhales wave response, under the irradiation of incident light, that is, sunlight, 1234-3660 is received
The sunlight wave band of rice can achieve 96.2% or more average wave absorbing efficiency, to realize the efficient absorption to sunlight；
6, absorber structure is simple, easily prepared, simplifies experiment preparation flow, uses manpower and material resources sparingly, be easy to practical popularization
Production has very high practical value.
Detailed description of the invention
The present invention is described in further details below with reference to attached drawing.
Fig. 1 is the structural schematic diagram of the broadband electromagnetic wave absorber the present invention is based on refractory material.
Fig. 2 is the abosrption spectrogram of broadband electromagnetic wave absorber of the embodiment of the present invention 1 based on refractory material.
Fig. 3 is that the chromium that broadband electromagnetic wave absorber top layer of the 2-4 of the embodiment of the present invention based on refractory material is division is received
Meter Huan, thickness (h) are 45,65,85 nanometers of corresponding abosrption spectrograms.
Fig. 4 is two that broadband electromagnetic wave absorber middle layer of the 5-7 of the embodiment of the present invention based on refractory material is division
Silica nano-rings, thickness (t) are 190,210,230 nanometers of corresponding abosrption spectrograms.
Fig. 5 is the nano-rings internal diameter that 8-10 of the embodiment of the present invention is divided based on the broadband electromagnetic wave absorber of refractory material
It (r) is 115,135,155 nanometers of corresponding abosrption spectrograms.
Fig. 6 is the nanometer interannular that 11-13 of the embodiment of the present invention is divided based on the broadband electromagnetic wave absorber of refractory material
Gap (d) is 25,45,65 nanometers of corresponding abosrption spectrograms.
Fig. 7 is the structural schematic diagram of broadband electromagnetic wave absorber of the embodiment of the present invention 14 based on refractory material.
Fig. 8 is the abosrption spectrogram of broadband electromagnetic wave absorber of the embodiment of the present invention 15 based on refractory material.
Specific embodiment
As shown in Figure 1, a kind of broadband photoelectromagnetic wave absorber based on refractory material of the invention, is by smooth gold
The metal nano ring 3 for belonging to film 1, the dielectric nano-rings 2 of division and division is connected in sequence from bottom to top.Wherein, division
Dielectric nano-rings and the metal nano ring of division press periodic array.The dielectric nano-rings of each division include four and uniformly divide
The gap of cloth, the metal nano ring of each division include four equally distributed gaps.
The broadband electromagnetic wave absorber based on refractory material can be prepared in accordance with the following steps:
(1) smooth substrate is cleaned by configured cleaning solution, is then rinsed well with deionized water, is dried with nitrogen,
It is fixed in settling chamber；
(2) metallic diaphragm of specific thicknesses is deposited on substrate；
(3) dielectric membranous layer of specific thicknesses is deposited on step (2) metallic diaphragm obtained；
(4) metallic diaphragm of specific thicknesses is deposited on step (3) dielectric membranous layer obtained；
(5) it is performed etching using no mask electron beam lithography, focused-ion-beam lithography technology, obtains the metal nano of division
The array structure of the dielectric nano-rings of the array structure and division of ring；
(6) it is cleaned using dehydrated alcohol, acetone, obtains the broadband electromagnetic wave absorber based on refractory material.
Specifically, substrate can be quartz, glass, silicon wafer or organic film.Deposition method includes magnetron sputtering method, Vacuum Deposition
Embrane method, metal fever evaporation coating method, pulse laser deposition, chemical plating method, atomic layer deposition method, one in electrochemical method
Kind or several mixed methods.
Embodiment 1:
The preparation method of a kind of broadband photoelectromagnetic wave absorber based on refractory material of the present embodiment: first in substrate
Silica glass on piece uses physical vaccum deposite method to be sequentially depositing chromium film of a layer thickness for 150 nanometers, a layer thickness
The chromium film for being 65 nanometers for 210 nanometers of silicon dioxide films and one layer；Secondly, on top layer chromium film and middle layer silicon dioxide film
Use chromium/silica nanometer ring of electron beam lithography preparation division for cyclic array, array period (P) is received for 400
Rice；The inside radius (r) of the nano-rings of division is 135 nanometers, and outer radius (R) is 200 nanometers；Smooth thickness of metal film
It (a) is 150 nanometers, the silica nanometer ring thickness (t) of division is 210 nanometers, and the chromium nanometer ring thickness (h) of division is received for 65
Rice；The gap (d) of the nano-rings of division is 45 nanometers.
The broadband photoelectromagnetic wave absorber based on refractory material of the present embodiment is tested, can be obtained such as Fig. 2
Shown in abosrption spectrogram.From figure 2 it can be seen that from near-infrared of the wavelength from 1234 nanometers to 3660 nanometer infrared model in
In enclosing, it is 2426 nanometers that absorber, which realizes strong absorption response absorption wide-band of the absorptivity greater than 90%, and average absorption ratio is up to
96.2%.
Embodiment 2:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, the thickness of the chromium nano-rings of top layer division
Degree is 45 nanometers, and other parameters are identical as specific embodiment 1.It can get corresponding abosrption spectrogram as shown in Figure 3.
Embodiment 3:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, the thickness of the chromium nano-rings of top layer division
Degree is 65 nanometers, and other parameters are identical as specific embodiment 1.It can get corresponding abosrption spectrogram as shown in Figure 3.Chromium nano-rings
When with a thickness of 65 nanometers, spectral width band of the absorber absorptivity greater than 90% reaches 2426 nanometers, the range of respective absorption spectrum
From 1234 nanometers to 3660 nanometer.
Embodiment 4:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, the thickness of the chromium nano-rings of top layer division
Degree is 85 nanometers, and other parameters are identical as specific embodiment 1.It can get corresponding abosrption spectrogram as shown in Figure 3.
Embodiment 5:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, the silica of intermediate split layer are received
Meter Huan with a thickness of 190 nanometers, other parameters are identical as specific embodiment 1.It can get corresponding absorption spectrum as shown in Figure 4
Figure.
Embodiment 6:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, the silica of intermediate split layer are received
Meter Huan with a thickness of 210 nanometers, other parameters are identical as specific embodiment 1.It can get corresponding absorption spectrum as shown in Figure 4
Figure.The silica nanometer ring of division with a thickness of 210 nanometers when, absorber reaches best effect.
Embodiment 7:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, the silica of intermediate split layer are received
Meter Huan with a thickness of 230 nanometers, other parameters are identical as specific embodiment 1.It can get corresponding absorption spectrum as shown in Figure 4
Figure.
Embodiment 8:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, the silica of intermediate split layer are received
The inside radius of meter Huan is 115 nanometers, and other parameters are identical as specific embodiment 1.It can get corresponding absorption spectrum as shown in Figure 5
Figure.
Embodiment 9:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, the silica of intermediate split layer are received
The inside radius of meter Huan is 135 nanometers, and other parameters are identical as specific embodiment 1.It can get corresponding absorption spectrum as shown in Figure 5
Figure.The absorptivity of absorber is most wide greater than 90% absorption wide-band when inside radius is 135 nanometers.
Embodiment 10:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, the silica of intermediate split layer are received
The inside radius of meter Huan is 155 nanometers, and other parameters are identical as specific embodiment 1.It can get corresponding absorption spectrum as shown in Figure 5
Figure.
Embodiment 11:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, the gap of the nano-rings of division is
25 nanometers, other parameters are identical as specific embodiment 1.It can get corresponding abosrption spectrogram as shown in Figure 6.
Embodiment 12:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, the gap of the nano-rings of division is
45 nanometers, other parameters are identical as specific embodiment 1.It can get corresponding abosrption spectrogram as shown in Figure 6.Gap is 45 nanometers
When absorber absorption response it is best.
Embodiment 13:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, the gap of the nano-rings of division is
65 nanometers, other parameters are identical as specific embodiment 1.It can get corresponding abosrption spectrogram as shown in Figure 6.
Embodiment 14:
The broadband photoelectromagnetic wave absorber based on refractory material in the present embodiment, absorber top in embodiment 1
Portion adds the silicon dioxide layer (thickness can be 50 nanometers -300 nanometers) of one layer of antireflection, obtains four-layer structure as shown in Figure 7
The broadband photoelectromagnetic wave absorber based on refractory material.
Embodiment 15:
Broadband photoelectromagnetic wave absorber in the present embodiment based on refractory material, absorber overhead in embodiment 1
Adding a layer thickness is 130 nanometers of antireflection silicon dioxide layer.The silicon dioxide anti-reflection of absorption spectrum top layer as shown in Figure 8
For layer with a thickness of 130 nanometers, assimilation effect is best.Absorber realizes that broadband of the absorptivity greater than 90% reaches 3386 nanometers, from 685
Nanometer is to 4071 nanometers.94.35% is up in 600 nanometers to 4200 nanometers of spectral region average absorption ratios.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, several simple deductions, replacement can also be made, all shall be regarded as belonging to guarantor of the invention
Protect range.
Claims (10)
1. a kind of broadband electromagnetic wave absorber based on refractory material, comprising:
Smooth metal film；
The dielectric nano-rings of the dielectric nano-rings of division of the array on the metal film, the division refer to that dielectric is received
There are several gaps on meter Huan；
The metal nano ring of division in the dielectric nano-rings of the division is set, and the metal nano ring of the division refers to
There are several gaps on metal nano ring.
2. the broadband electromagnetic wave absorber according to claim 1 based on refractory material, it is characterised in that: the division
Dielectric nano-rings include four equally distributed gaps, the metal nano ring of the division includes four equally distributed
Gap.
3. the broadband electromagnetic wave absorber according to claim 2 based on refractory material, it is characterised in that: described smooth
The thickness of metal film be more than 150 nanometers, the material of the smooth metal film is titanium, nickel, chromium or tungsten.
4. the broadband electromagnetic wave absorber according to claim 2 based on refractory material, it is characterised in that: the division
Dielectric nano-rings with a thickness of 1-300 nanometers, the material of the dielectric nano-rings of the division is silica, aluminium oxide
Or magnesium fluoride.
5. the broadband electromagnetic wave absorber according to claim 2 based on refractory material, it is characterised in that: the division
Metal nano ring thickness be 1-300 nanometer, the material of the metal nano ring of the division is titanium, nickel, chromium or tungsten.
6. the broadband electromagnetic wave absorber according to claim 2 based on refractory material, it is characterised in that: the division
Dielectric nano-rings and the internal diameter and outer diameter of the metal nano ring of the division be consistent, internal diameter is 1-300 nanometers, outside
Diameter is 300-800 nanometers.
7. the broadband electromagnetic wave absorber according to claim 1 based on refractory material, it is characterised in that: the array
Period be greater than or equal to the division dielectric nano-rings outer diameter.
8. the preparation of the broadband electromagnetic wave absorber described in -7 any claims based on refractory material according to claim 1
Method, comprising the following steps:
(1) smooth substrate is provided；
(2) metallic diaphragm of specific thicknesses is deposited on substrate；
(3) dielectric membranous layer of specific thicknesses is deposited on step (2) metallic diaphragm obtained；
(4) metallic diaphragm of specific thicknesses is deposited on step (3) dielectric membranous layer obtained；
(5) it is performed etching using no mask electron beam lithography, focused-ion-beam lithography technology, obtains the metal nano ring of division
The array structure of array structure and the dielectric nano-rings of division；
(6) it is cleaned using dehydrated alcohol, acetone, obtains the broadband electromagnetic wave absorber based on refractory material.
9. according to the method described in claim 8, it is characterized by: the substrate is quartz, glass, silicon wafer or organic film.
10. according to the method described in claim 8, it is characterized by: the deposition method includes magnetron sputtering method, vacuum coating
One of method, metal fever evaporation coating method, pulse laser deposition, chemical plating method, atomic layer deposition method, electrochemical method
Or several mixed method.
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Cited By (1)
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| CN113009606A (en) * | 2021-02-04 | 2021-06-22 | 江西师范大学 | Five-layer nano-material ultra-wideband perfect absorber and preparation method thereof |
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