CN109358386A - A kind of multi-wavelength near infrared absorption device for polarizing insensitive - Google Patents
A kind of multi-wavelength near infrared absorption device for polarizing insensitive Download PDFInfo
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- CN109358386A CN109358386A CN201811373697.1A CN201811373697A CN109358386A CN 109358386 A CN109358386 A CN 109358386A CN 201811373697 A CN201811373697 A CN 201811373697A CN 109358386 A CN109358386 A CN 109358386A
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- polarizing
- near infrared
- infrared absorption
- absorption device
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
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Abstract
The invention discloses a kind of multi-wavelength near infrared absorption devices for polarizing insensitive, belong to near-infrared meta-material absorber technical field, and solving the problems, such as can only be in single, electromagnetic wave in two or three wavelength high-selenium corn.Absorber of the invention is made of multiple absorber units, and each absorber unit includes: substrate (1), golden film (2), gold nano chamber (21)；Wherein, golden film (2) is tightly attached to the upper surface of substrate (1)；Metal nano chamber (21) is " ten " font groove, positioned at the center of structural unit, the interior certain depth of golden film (2) is carved into since the upper surface of golden film (2) but without carving thoroughly；Electromagnetic wave material is filled in the metal nano chamber (21).Near infrared absorption device provided by the invention has structure simple, high-absorbility, and polarize insensitive and wide-angle characteristic, and there are six absorption peak points.
Description
Technical field
The present invention relates to infrared technique fields, and in particular to a kind of multi-wavelength meta-material absorber for polarizing insensitive.
Background technique
In national defense and military fields, to avoid weaponry from being found and attacked by enemy, the tactical level of military equipment is improved,
Radar stealth technology also becomes increasingly important, the great attention by countries in the world.Inhaling wave is the key that radar stealth technology, but
There are the disadvantages such as bulky, heavy, performance is low for traditional absorbing material, are above very restricted in application.Based on Meta Materials
Absorber have many advantages, such as thin thickness, light weight, absorb it is strong, miniature survey radiation gauge, thermoelectron optical detector, infrared stealth,
The fields such as radiation refrigeration are with important application prospects.Landy et al. for the first time microwave band propose metal splitting ring/medium/
Metal wire sandwich structure, the structure realize the perfect of single wavelength and absorb, and then, and propose follow-on sandwich structure
(metal structure/medium/metallic film) has been widely studied since its structure is simple, absorptivity is high.
Currently, a variety of meta-material absorber structures, but the operating wave of these absorber structures has been proposed in scientific research personnel
Long primary limitation has been unable to meet the requirement of system rejection to disturbance in the electro-magnetic wave absorption of single, double or three wavelength.Therefore, such as
What realizes the electro-magnetic wave absorption of multiple wavelength, enhances the anti-interference to system, is a problem in urgent need to solve.The present invention
The meta-material absorber of proposition realizes the perfect of much six wavelength in 1.0~2.5 microns and absorbs, but also has polarization
Insensitive and wide-angle characteristic, therefore there is very high engineering application value.
Summary of the invention
The purpose of the invention is to provide a kind of multi-wavelength with the insensitive characteristic that polarizes for working in infrared band
Meta-material absorber.
The object of the present invention is achieved like this: the meta-material absorber is made of multiple absorber units, absorber list
Member includes: substrate (1), golden film (2), gold nano chamber (21)；Wherein, golden film (2) is tightly attached to the upper surface of substrate (1)；Metal is received
Rice chamber (21) is " ten " font groove, positioned at the center of structural unit, is carved into golden film (2) since the upper surface of golden film (2)
Certain depth but not quarter are thoroughly；The lossless electromagnetic wave material of filling in the metal nano chamber (21).
The cross section of each absorber unit is square, and its side length is 300~390 nanometers of
The thickness t of the golden film is much larger than the penetration depth h of infrared waves in a metalskin, the depth h of gold nano chamber, from
The thickness of the remaining golden film in the upper surface of the bottom of metal nano chamber to substrate remains to the penetration depth much larger than infrared waves, i.e. T-
H > > hskin。
The width W of the gold nano chamber (21) is 80~110 nanometers.
The depth h of the gold nano chamber (21) is 700~900 nanometers.
The length L of the gold nano chamber (21) is 240~290 nanometers.
Filling electromagnetic wave material is GaAs, silicon, indium phosphide or gallium phosphide in the gold nano chamber (21).
Compared with prior art, the present invention its remarkable advantage are as follows:
1. meta-material absorber is using electromagnetic wave material is filled in metal nano groove, structure is simple, compact, novel, complete
It is U.S. symmetrical, it is easy to accomplish, it can also make absorber that there is the characteristic of polarize insensitive and wide-angle；
2. meta-material absorber proposed by the present invention can realize six absorptions in 1.0~2.5 microns of wave-length coverage
Peak, and all with the absorption of almost Perfect；
3. meta-material absorber structure material therefor proposed by the present invention is all conventional material, it is easy to accomplish.
Detailed description of the invention
Fig. 1: three dimensional structure diagram of the invention.
Fig. 2: Fig. 1 main view.
Fig. 3: Fig. 1 bottom view.
Fig. 4: the present invention is to normal incident absorption coefficient simulation result diagram.
Fig. 5: absorption spectrogram of the present invention under different polarisation angles.
Fig. 6: absorptivity spectrogram of the present invention in TM wave, under different oblique firing angles.
Specific embodiment
Present invention is further described in detail with specific embodiment with reference to the accompanying drawing.
Multi-wavelength meta-material absorber of the present invention is infinite period structure, including the multiple absorptive units being continuously arranged.
As shown in Figure 1, 2, 3, the absorptive unit includes: substrate (1), golden film (2), gold nano chamber (21)；Wherein, golden
Film (2) is tightly attached to the upper surface of substrate (1)；Gold nano chamber (21) is " ten " font groove, positioned at the center of structural unit, from gold
The upper surface of film (2) starts to be carved into the interior certain depth of golden film (2) but without carving thoroughly；Nothing is filled in the metal nano chamber (21)
Electromagnetic wave material is lost.
As embodiment, the parameters of structural dimension of each absorptive unit is as follows: P=310 nanometers of lattice period；Golden film (1)
T=1000 nanometers of thickness；Width W, length L, the depth h of gold nano chamber (21) are respectively 100,270,800 nanometers；Gold nano
The material filled in chamber (21) is GaAs.
The absorptivity of multi-wavelength meta-material absorber described in the present embodiment is defined as A=1-R-T, and R is reflectivity in formula,
T is transmissivity.In order to maximize absorptivity, it is desirable that small as far as possible in entire frequency range internal reflection rate and transmissivity.This
Gold nano chamber (21) bottom invented in the absorptive unit of design is full golden film, and electromagnetic wave cannot transmit, and transmissivity levels off to zero,
Therefore absorptivity calculation formula can be reduced to A=1-R.
Simulation result of the present embodiment under electromagnetic wave normal incidence as shown in figure 4, the simulation result by FDTD
Solutions is calculated.From the figure, it can be seen that there are six apparent absorption peaks in 1.0~2.5 microns.This six suctions
Receive the peak absorptivity at 1.233 microns, 1.372 microns, 1.566 microns, 1.824 microns, 2.124 microns, 2.355 microns point
Not Wei 89.38%, 99.92%, 98.06%, 95.91%, 96.81%, 99.70%, and average absorption ratio is up to
96.63%.This illustrates that absorber proposed by the present invention has reached the absorption of almost Perfect on six wavelength.
Absorption spectrogram of the present embodiment under different polarisation angles is as shown in Figure 5.The polarisation angles are defined as electric field
The angle of vector and vertical direction, it is constant that electromagnetic wave wave vector still remains perpendicular to wave-absorber absorbing surface.As can be seen from the figure
Absorber proposed by the present invention absorption response curve having the same under different polarisation angles, this illustrates suction proposed by the present invention
It receives device and shows the good insensitive characteristic of polarization.
For the present embodiment in TM wave, absorptivity simulation result diagram is as shown in Figure 6 under different oblique firing angles.It can from figure
To find out, when incidence angle is 60 degree, each absorption peak can still keep high-absorbility.This illustrates absorption proposed by the present invention
Device has wide-angle characteristic.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only for
Citing and explanation, and be not intended to limit the invention within the scope of described embodiment.Furthermore those skilled in the art can
With understanding, the present invention is not limited to the above embodiments, and introduction according to the present invention can also make more kinds of modifications
And modification, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention is by attached
Claims and its equivalent scope defined.
Claims (9)
1. a kind of multi-wavelength near infrared absorption device for polarizing insensitive, it is characterised in that: the absorber is by multiple absorber units
It constitutes, each absorber unit includes: substrate (1), golden film (2), gold nano chamber (21)；Wherein, golden film (2) is tightly attached to
The upper surface of substrate (1)；Gold nano chamber (21) is " ten " font groove, positioned at the center of structural unit, from the upper table of golden film (2)
Face starts to be carved into the interior certain depth of golden film (2) but no quarter thoroughly, and the certain depth refers to from the bottom of gold nano chamber to substrate
The remaining golden film thickness in upper surface remain to the penetration depth much larger than electromagnetic wave；Electromagnetism is filled in the gold nano chamber (21)
Wave material.
2. a kind of multi-wavelength near infrared absorption device for polarizing insensitive according to claim 1, it is characterised in that: the lining
Bottom (1) is one of High Resistivity Si, polyimides, GaAs or quartz crystal, with a thickness of 50~1000 microns.
3. a kind of multi-wavelength near infrared absorption device for polarizing insensitive according to claim 1, it is characterised in that: the gold
The thickness t of film is much larger than the penetration depth h of electromagnetic wave in a metalskin, the depth h of gold nano chamber, from the bottom of metal nano chamber
The thickness of the remaining golden film in the upper surface of portion to substrate remains to the penetration depth much larger than electromagnetic wave, i.e. t-h > > hskin。
4. a kind of multi-wavelength near infrared absorption device for polarizing insensitive according to claim 1, it is characterised in that: described every
The cross section of a wave absorbing device unit is all square, and side length P is 300~390 nanometers.
5. a kind of multi-wavelength near infrared absorption device for polarizing insensitive according to claim 1, it is characterised in that: the gold
The depth h of nano-cavity (21) is 700~900 nanometers.
6. a kind of multi-wavelength near infrared absorption device for polarizing insensitive according to claim 1, it is characterised in that: the gold
The width W of nano-cavity (21) is 80~110 nanometers.
7. a kind of multi-wavelength near infrared absorption device for polarizing insensitive according to claim 1, it is characterised in that: the gold
The length L of nano-cavity (21) is 240~290 nanometers.
8. a kind of multi-wavelength near infrared absorption device for polarizing insensitive according to claim 1, it is characterised in that: described
Filling electromagnetic wave material is GaAs, silicon, indium phosphide or gallium phosphide in gold nano chamber (21).
9. a kind of multi-wavelength near infrared absorption device for polarizing insensitive according to claim 1, it is characterised in that: the suction
Wave cellular array number is no less than 10 × 10.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811373697.1A CN109358386A (en) | 2018-11-14 | 2018-11-14 | A kind of multi-wavelength near infrared absorption device for polarizing insensitive |
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| CN201811373697.1A CN109358386A (en) | 2018-11-14 | 2018-11-14 | A kind of multi-wavelength near infrared absorption device for polarizing insensitive |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110208887A (en) * | 2019-04-15 | 2019-09-06 | 华南师范大学 | A kind of visible light ultrathin wideband resonance absorbing device based on semiconductor |
| CN110376667A (en) * | 2019-07-25 | 2019-10-25 | 江西师范大学 | A kind of broadband electromagnetic wave absorber and preparation method thereof based on refractory material |
| CN112134024A (en) * | 2020-09-25 | 2020-12-25 | 合肥工业大学 | Three-dimensional structure broadband metamaterial wave absorber based on full graphite |
| CN112327558A (en) * | 2020-09-30 | 2021-02-05 | 成都理工大学 | Method and system for generating secondary harmonic waves of intermediate infrared broadband |
| CN115313059A (en) * | 2022-09-01 | 2022-11-08 | 中国人民解放军空军工程大学 | Polarization insensitive electromagnetic anti-reflection super surface under extreme incident angle |
-
2018
- 2018-11-14 CN CN201811373697.1A patent/CN109358386A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110208887A (en) * | 2019-04-15 | 2019-09-06 | 华南师范大学 | A kind of visible light ultrathin wideband resonance absorbing device based on semiconductor |
| CN110208887B (en) * | 2019-04-15 | 2021-07-02 | 华南师范大学 | Ultra-thin broadband resonance absorber of visible light based on semiconductor |
| CN110376667A (en) * | 2019-07-25 | 2019-10-25 | 江西师范大学 | A kind of broadband electromagnetic wave absorber and preparation method thereof based on refractory material |
| CN110376667B (en) * | 2019-07-25 | 2022-07-26 | 江西师范大学 | Broadband electromagnetic wave absorber based on refractory material and preparation method thereof |
| CN112134024A (en) * | 2020-09-25 | 2020-12-25 | 合肥工业大学 | Three-dimensional structure broadband metamaterial wave absorber based on full graphite |
| CN112327558A (en) * | 2020-09-30 | 2021-02-05 | 成都理工大学 | Method and system for generating secondary harmonic waves of intermediate infrared broadband |
| CN115313059A (en) * | 2022-09-01 | 2022-11-08 | 中国人民解放军空军工程大学 | Polarization insensitive electromagnetic anti-reflection super surface under extreme incident angle |
| CN115313059B (en) * | 2022-09-01 | 2023-09-08 | 中国人民解放军空军工程大学 | Electromagnetic anti-reflection super surface under polarization insensitive extreme incidence angle |
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Application publication date: 20190219 |