CN203180016U - Terahertz wave absorber of periodic split ring-shaped structure - Google Patents
Terahertz wave absorber of periodic split ring-shaped structure Download PDFInfo
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- CN203180016U CN203180016U CN 201320022712 CN201320022712U CN203180016U CN 203180016 U CN203180016 U CN 203180016U CN 201320022712 CN201320022712 CN 201320022712 CN 201320022712 U CN201320022712 U CN 201320022712U CN 203180016 U CN203180016 U CN 203180016U
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- split ring
- wave absorber
- open annular
- thz wave
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Abstract
The utility model discloses a terahertz wave absorber of a periodic split ring-shaped structure. The terahertz wave absorber comprises a signal input terminal, a split ring-shaped metal transmission layer, a matrix, and a metal layer structure, wherein the split ring-shaped metal transmission layer is connected with the matrix; the split ring-shaped metal transmission layer comprises N x N split ring metal periodic units. Each split ring metal periodic unit comprises a split ring structure. Signals are inputted from the signal input terminal and then reach the metal layer structure after sequentially passing through the split ring-shaped metal transmission layer and the matrix. The split ring-shaped metal transmission layer realizes the selection of absorption frequencies, and the metal layer structure realizes the effect of absorption of the terahertz waves. The terahertz wave absorber is advantaged by being simple in structure, small in size, small in volume, light in weight, economized in material, convenient to manufacture, and the like. The utility model discloses the terahertz wave absorber of the periodic split ring-shaped structure.
Description
Technical field
The utility model relates to absorber, relates in particular to a kind of THz wave absorber of periodicity open annular structure.
Background technology
Terahertz (1THz=1e
12Hz) technology is a kind of new and high technology that grows up late 1980s, is quite paid close attention in recent years, and it has considerable application prospect in fields such as basic research, commercial Application, biomedicines.
Terahertz emission was familiar with by people in 19th century, still, owing to do not have stable radiation source and a detector, was " no-man's-land " of scientific circles for the substance characteristics of Terahertz spectral coverage always.The people such as Ao Sidun of U.S.'s Bell Laboratory are when the ultrafast semiconductor phenomenon of research, found GaAs photoconduction detection effect, relevant result delivers at U.S.'s authority's magazine " science ", has caused the extensive concern of scientific circles, becomes the heat subject in 20 end of the centurys.In the practical application, the THz wave absorber is with its relatively low volume, and density is low, and the narrow-band response has important use in the Terahertz thermal imaging.My THz wave absorber structure current domestic and international research and that proposed seldom, these structures are often very complicated, and difficult in the actual fabrication process, cost is higher, requires also high to processing technology and processing environment.So press for development simple in structure, that size is little, the THz wave absorber of being convenient to processing and fabricating supports the THz wave application is proposed.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of THz wave absorber of periodicity open annular structure is provided.
The utility model discloses a kind of THz wave absorber of periodicity open annular structure.It comprises signal input part, split ring metal transport layer, matrix, metal-layer structure; Split ring metal transport layer links to each other with matrix, comprises N * N split ring metal periodic unit on the open annular metal transport layer, and split ring metal periodic unit comprises a split ring ring structure; Signal is imported from signal input part, passes through annular shape metal transport layer, matrix successively, arrives the realization of metal-layer structure open annular metal transport layer to the selection of absorption frequency afterwards, and metal-layer structure is realized the absorption to THz wave.
The thickness of described open annular metal transport layer is 1～2 μ m.The thickness of described matrix is 500～520 μ m.The thickness of described metal-layer structure is 1～2 μ m.The spacing of a described adjacent open annular periodic unit is 10～12 μ m.Described becket outer radius is 70 μ m, and width is 5 μ m, and notch length is 6 μ m.The material of described matrix is the High Resistivity Si material, and the material of endless metal transport layer is copper, and the material of metal-layer structure is copper.
The utlity model has that frequency absorption is good, simple in structure, size is little, volume is little, in light weight, economical with materials, be convenient to advantages such as making.
Description of drawings
Fig. 1 is the structural representation of the THz wave absorber of periodicity open annular structure;
Fig. 2 is the structural representation of open annular metal transport layer of the present utility model;
Fig. 3 is the structural representation of open annular periodic unit of the present utility model;
Fig. 4 is the THz wave absorber performance curve of the THz wave absorber of periodicity open annular structure.
Embodiment
Shown in Fig. 1～3, periodically the THz wave absorber of open annular structure comprises signal input part 1, split ring metal transport layer 2, matrix 3, metal-layer structure 4; Split ring metal transport layer 2 links to each other with matrix 3, comprises N * N split ring metal periodic unit 5 on the open annular metal transport layer 2, and split ring metal periodic unit 5 comprises a split ring ring structure 6; Signal passes through annular shape metal transport layer 2, matrix 3 successively, arrives metal-layer structure 4 afterwards from signal input part 1 input, the selection that open annular metal transport layer 2 realizes absorption frequency, and metal level 4 structures realize the absorption to THz wave.
The thickness of described open annular metal transport layer 2 is 1～2 μ m.The thickness of described matrix 3 is 500～520 μ m.The thickness of described metal-layer structure 4 is 1～2 μ m.The spacing of a described adjacent open annular periodic unit 5 is 10～12 μ m.Described becket outer radius is 70 μ m, and width is 5 μ m, and notch length is 6 μ m.The material of described matrix 3 is the High Resistivity Si material, and the material of endless metal transport layer 2 is copper, and the material of metal-layer structure 4 is copper.
Embodiment 1:
It is as follows to set each parameter value: construction unit N=100, the thickness of endless metal transport layer are 1 μ m.The thickness of matrix is 500 μ m.The thickness of metal-layer structure is 1 μ m.The spacing of an adjacent endless metal periodic unit is 10 μ m.The becket outer radius is 70 μ m, and width is 5 μ m.The material of described matrix is the High Resistivity Si material, and the material of breach endless metal is copper, and the material of metal-layer structure is copper.Absorption coefficient formula A=1-R-T (A is absorptivity, and R is reflectivity, and T is transmitance) records this absorber absorptivity when center frequency points is 1.002THz with THz-TDS and shows to have good absorption characteristic close to 0.91.
Claims (7)
1. the THz wave absorber of a periodicity open annular structure is characterized in that comprising signal input part (1), split ring metal transport layer (2), matrix (3), metal-layer structure (4); Split ring metal transport layer (2) links to each other with matrix (3), comprises N * N split ring metal periodic unit (5) on the open annular metal transport layer (2), and split ring metal periodic unit (5) comprises a split ring structure (6); Signal is imported from signal input part (1), pass through open annular metal transport layer (2), matrix (3) successively, arrive metal-layer structure (4) afterwards, open annular metal transport layer (2) realizes the selection to absorption frequency, and metal-layer structure (4) is realized the absorption to THz wave.
2. the THz wave absorber of a kind of periodicity open annular structure according to claim 1, the thickness that it is characterized in that described open annular metal transport layer (2) is 1～2 μ m.
3. the THz wave absorber of a kind of periodicity open annular structure according to claim 1, the thickness that it is characterized in that described matrix (3) is 500～520 μ m.
4. the THz wave absorber of a kind of periodicity open annular structure according to claim 1, the thickness that it is characterized in that described metal-layer structure (4) is 1～2 μ m.
5. the THz wave absorber of a kind of periodicity open annular structure according to claim 1, the spacing that it is characterized in that a described adjacent open annular periodic unit (5) is 10～12 μ m.
6. the THz wave absorber of a kind of periodicity open annular structure according to claim 1 is characterized in that described metal openings ring (6) outer radius is 70 μ m, and width is 5 μ m, and notch length is 6 μ m.
7. the THz wave absorber of a kind of periodicity open annular structure according to claim 1, the material that it is characterized in that described matrix (3) is the High Resistivity Si material, and the material of endless metal transport layer (2) is copper, and the material of metal-layer structure (4) is copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320022712 CN203180016U (en) | 2013-01-14 | 2013-01-14 | Terahertz wave absorber of periodic split ring-shaped structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320022712 CN203180016U (en) | 2013-01-14 | 2013-01-14 | Terahertz wave absorber of periodic split ring-shaped structure |
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| CN203180016U true CN203180016U (en) | 2013-09-04 |
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| CN 201320022712 Expired - Fee Related CN203180016U (en) | 2013-01-14 | 2013-01-14 | Terahertz wave absorber of periodic split ring-shaped structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110376667A (en) * | 2019-07-25 | 2019-10-25 | 江西师范大学 | A kind of broadband electromagnetic wave absorber and preparation method thereof based on refractory material |
| CN114280710A (en) * | 2021-12-19 | 2022-04-05 | 复旦大学 | Super-structure surface with double-continuum spectrum bound state characteristics |
-
2013
- 2013-01-14 CN CN 201320022712 patent/CN203180016U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110376667A (en) * | 2019-07-25 | 2019-10-25 | 江西师范大学 | A kind of broadband electromagnetic wave absorber and preparation method thereof based on refractory material |
| CN110376667B (en) * | 2019-07-25 | 2022-07-26 | 江西师范大学 | Broadband electromagnetic wave absorber based on refractory material and preparation method thereof |
| CN114280710A (en) * | 2021-12-19 | 2022-04-05 | 复旦大学 | Super-structure surface with double-continuum spectrum bound state characteristics |
| CN114280710B (en) * | 2021-12-19 | 2024-02-02 | 复旦大学 | Super-structured surface with bicontinuous spectrum binding state characteristics |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130904 Termination date: 20140114 |