CN203218411U - Terahertz wave absorber with periodic branch knot double-ring double-opening structure - Google Patents
Terahertz wave absorber with periodic branch knot double-ring double-opening structure Download PDFInfo
- Publication number
- CN203218411U CN203218411U CN 201320022806 CN201320022806U CN203218411U CN 203218411 U CN203218411 U CN 203218411U CN 201320022806 CN201320022806 CN 201320022806 CN 201320022806 U CN201320022806 U CN 201320022806U CN 203218411 U CN203218411 U CN 203218411U
- Authority
- CN
- China
- Prior art keywords
- minor matters
- dicyclo
- double
- opening
- band minor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The utility model discloses a terahertz wave absorber with a periodic branch knot double-ring double-opening structure, which is characterized by comprising a signal input end, a branch knot double-ring double-opening metal transport layer, a substrate and a metal layer structure, wherein the branch knot double-ring double-opening metal transport layer is connected with the substrate and comprises N*N pieces of branch knot double-ring double-opening periodic units; the branch knot double-ring double-opening periodic unit comprises a snap ring structure and a branch knot snap ring structure; signals are inputted from the input end, pass through the branch knot double-ring double-opening metal transport layer and the substrate in sequence, and reach the metal layer structure; the branch knot double-ring double-opening metal transport layer realizes selection of the absorption frequency; and the metal layer structure realizes absorption of terahertz waves. The terahertz wave absorber disclosed by the utility model has the advantages of simple structure, small size, small volume, light weight, material saving, convenient manufacturing and the like.
Description
Technical field
The utility model relates to absorber, relates in particular to the THz wave absorber of the two hatch frames of a kind of periodicity band minor matters dicyclo.
Background technology
Terahertz wave band is between microwave and millimeter wave and the infrared optical, is the transition region between electronics and the photonic propulsion.Because Terahertz is at the specific position of electromagnetic spectrum, the blank spot on scientific research and technology are used is a lot, so terahertz wave band is also referred to as the Terahertz blank.
The people such as Ao Sidun of U.S.'s Bell Laboratory are when the ultrafast semiconductor phenomenon of research, found GaAs photoconduction detection effect, relevant result delivers at U.S.'s authority's magazine " science ", has caused the extensive concern of scientific circles, becomes the heat subject in 20 end of the centurys.In the practical application, the THz wave absorber is with its relatively low volume, and density is low, and the narrow-band response has important use in the Terahertz thermal imaging.
My THz wave absorber structure current domestic and international research and that proposed seldom, these structures are often very complicated, and difficult in the actual fabrication process, cost is higher, requires also high to processing technology and processing environment.So press for development simple in structure, that size is little, the THz wave absorber of being convenient to processing and fabricating supports the THz wave application is proposed.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and the THz wave absorber of the two hatch frames of a kind of periodicity band minor matters dicyclo is provided.
The utility model discloses the THz wave absorber of the two hatch frames of a kind of periodicity band minor matters dicyclo, it is characterized in that comprising signal input part, the two opening metal transport layers of band minor matters dicyclo, matrix, metal-layer structure; The defeated layer of the two opening metals of band minor matters dicyclo links to each other with matrix, and the two opening metal transport layers of band minor matters dicyclo comprise N * N the two opening periodic units of band minor matters dicyclo; The two opening periodic units of band minor matters dicyclo comprise a split ring structure and band minor matters split ring structure; Signal is imported from signal input part, successively through the two opening metal transport layers of band minor matters dicyclo, matrix, arrive metal-layer structure afterwards, the two opening metal transport layers of band minor matters dicyclo realize the selection to absorption frequency, and metal-layer structure is realized the absorption to THz wave.
The thickness of the two opening metal transport layers of described band minor matters dicyclo is 1～2 μ m.The thickness of described matrix is 300～350 μ m.The thickness of described metal-layer structure is 1～2 μ m.The spacing of the two opening periodic units of adjacent described band minor matters dicyclo is 10～12 μ m.Described split ring structure outer radius is 65～70 μ m, and width is 4～5 μ m, and A/F is 4～5 μ m.Described band minor matters split ring structure outer radius is 30～35 μ m, and metal width is 4～5 μ m, and A/F is 4～5 μ m.The material of described matrix is the High Resistivity Si material, and the material of the two opening metal transport layers of band minor matters dicyclo is copper, and the material of metal-layer structure is copper.
The utlity model has that frequency absorption is good, simple in structure, size is little, volume is little, in light weight, economical with materials, be convenient to advantages such as making.
Description of drawings
Fig. 1 is that periodicity is with the structural representation of the THz wave absorber of the two hatch frames of minor matters dicyclo;
Fig. 2 is the structural representation of the two opening metal transport layers of band minor matters dicyclo of the present utility model;
Fig. 3 is the structural representation of the two opening periodic units of band minor matters dicyclo of the present utility model;
Fig. 4 is that periodicity is with the performance curve of the THz wave absorber of the two hatch frames of minor matters dicyclo.
Embodiment
Shown in Fig. 1～3, periodically the THz wave absorber with the two hatch frames of minor matters dicyclo comprises signal input part 1, the two opening metal transport layers 2 of band minor matters dicyclo, matrix 3, metal-layer structure 4; The two opening metal transport layers 2 of band minor matters dicyclo link to each other with matrix 3, comprise N * N the two opening periodic units 5 of band minor matters dicyclo on the two opening metal transport layers 2 of band minor matters dicyclo, the two opening periodic units 5 of band minor matters dicyclo comprise a split ring structure 6 and band minor matters split ring structure 7; Signal is from signal input part 1 input, successively through the two opening metal transport layers 2 of band minor matters dicyclo, matrix 3, arrive metal-layer structure 4 afterwards, the selection that the two opening metal transport layers 2 of band minor matters dicyclo realize absorption frequency, the absorption that metal-layer structure 4 is realized THz wave.
The thickness of the two opening metal transport layers 2 of described band minor matters dicyclo is 1～2 μ m.The thickness of described matrix 3 is 300～350 μ m.The thickness of described metal-layer structure 4 is 1～2 μ m.The spacing of the two opening periodic units 5 of adjacent described band minor matters dicyclo is 10～12 μ m.Described split ring structure 6 outer radius are 65～70 μ m, and width is 4～5 μ m, and A/F is 4～5 μ m.Described band minor matters split ring structure 7 outer radius are 30～30 μ m, and metal width is 4～5 μ m, and A/F is 4～5 μ m.The material of described matrix 3 is the High Resistivity Si material, and the material of the two opening metal transport layers 2 of band minor matters dicyclo is copper, and the material of metal-layer structure 4 is copper.
Embodiment 1:
It is as follows to set each parameter value: construction unit N=100, the thickness of the two opening metal transport layers of described band minor matters dicyclo is 2 μ m.The thickness of described matrix is 300～350 μ m.The thickness of described metal-layer structure is 2 μ m.The spacing of the two opening periodic units of adjacent described band minor matters dicyclo is 12 μ m.Split ring structure outer radius is 70 μ m, and width is 5 μ m, and A/F is 5 μ m.Band minor matters split ring structure outer radius is 35 μ m, and metal width is 5 μ m, and A/F is 5 μ m.The material of matrix is the High Resistivity Si material, and the material of the two opening metal transport layers of band minor matters dicyclo is copper, and the material of metal-layer structure is copper.Absorption coefficient formula A=1-R-T (A is absorptivity, and R is reflectivity, and T is transmitance) records this absorber absorptivity when center frequency points is 0.825THz with THz-TDS and shows to have good absorbability close to 0.99.
Claims (8)
1. a periodicity is characterized in that comprising signal input part (1), the two opening metal transport layers (2) of band minor matters dicyclo, matrix (3), metal-layer structure (4) with the THz wave absorber of the two hatch frames of minor matters dicyclo; The two opening metal transport layers (2) of band minor matters dicyclo link to each other with matrix (3), and the two opening metal transport layers (2) of band minor matters dicyclo comprise N * N the two opening periodic units (5) of band minor matters dicyclo; The two opening periodic units (5) of band minor matters dicyclo comprise a split ring structure (6) and band minor matters split ring structures (7); Signal is imported from signal input part (1), successively through the two opening metal transport layers (2) of band minor matters dicyclo, matrix (3), arrive metal-layer structure (4) afterwards, the two opening metal transport layers (2) of band minor matters dicyclo realize the selection to absorption frequency, and metal-layer structure (4) is realized the absorption to THz wave.
2. the THz wave absorber of the two hatch frames of a kind of periodicity band minor matters dicyclo according to claim 1 is characterized in that the thickness of the two opening metal transport layers (2) of described band minor matters dicyclo is 1～2 μ m.
3. the THz wave absorber of the two hatch frames of a kind of periodicity band minor matters dicyclo according to claim 1, the thickness that it is characterized in that described matrix (3) is 300～350 μ m.
4. the THz wave absorber of the two hatch frames of a kind of periodicity band minor matters dicyclo according to claim 1, the thickness that it is characterized in that described metal-layer structure (4) is 1～2 μ m.
5. the THz wave absorber of the two hatch frames of a kind of periodicity band minor matters dicyclo according to claim 1 is characterized in that the spacing of the two opening periodic units (5) of adjacent described band minor matters dicyclo is 10～12 μ m.
6. the THz wave absorber of the two hatch frames of a kind of periodicity band minor matters dicyclo according to claim 1 is characterized in that described split ring structure (6) outer radius is 65～70 μ m, and width is 4～5 μ m, and A/F is 4～5 μ m.
7. the THz wave absorber of the two hatch frames of a kind of periodicity band minor matters dicyclo according to claim 1 is characterized in that described band minor matters split ring structure (7) outer radius is 30～35 μ m, and metal width is 4～5 μ m, and A/F is 4～5 μ m.
8. the THz wave absorber of the two hatch frames of a kind of periodicity band minor matters dicyclo according to claim 1, the material that it is characterized in that described matrix (3) is the High Resistivity Si material, the material of the two opening metal transport layers (2) of band minor matters dicyclo is copper, and the material of metal-layer structure (4) is copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320022806 CN203218411U (en) | 2013-01-14 | 2013-01-14 | Terahertz wave absorber with periodic branch knot double-ring double-opening structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320022806 CN203218411U (en) | 2013-01-14 | 2013-01-14 | Terahertz wave absorber with periodic branch knot double-ring double-opening structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203218411U true CN203218411U (en) | 2013-09-25 |
Family
ID=49207918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320022806 Expired - Fee Related CN203218411U (en) | 2013-01-14 | 2013-01-14 | Terahertz wave absorber with periodic branch knot double-ring double-opening structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203218411U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113410595A (en) * | 2021-03-25 | 2021-09-17 | 重庆邮电大学 | Terahertz low-pass angle filter of square ring-four split ring type |
-
2013
- 2013-01-14 CN CN 201320022806 patent/CN203218411U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113410595A (en) * | 2021-03-25 | 2021-09-17 | 重庆邮电大学 | Terahertz low-pass angle filter of square ring-four split ring type |
| CN113410595B (en) * | 2021-03-25 | 2022-05-03 | 重庆邮电大学 | Terahertz low-pass angle filter of square ring-four split ring type |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203232940U (en) | Terahertz wave filter with periodical square opening ring structures | |
| CN106129135A (en) | Terahertz detector based on graphene field effect transistor and preparation method thereof | |
| Mukherjee et al. | Utilization of monolayer MoS2 in Bragg stacks and metamaterial structures as broadband absorbers | |
| CN104198051A (en) | Multiband infrared metamaterial wave absorber | |
| CN202513262U (en) | Periodicity open-type double-circular-ring structure terahertz wave absorber | |
| CN203218411U (en) | Terahertz wave absorber with periodic branch knot double-ring double-opening structure | |
| CN203134940U (en) | Periodic concentric double-ring structure terahertz wave filter | |
| CN203180019U (en) | Terahertz wave absorber of periodic double-opening square ring-shaped structure | |
| CN203218410U (en) | Terahertz wave absorber with periodic double-opening ring structure | |
| CN203180017U (en) | Terahertz wave absorber of periodic branch and knot-provided double-ring double-opening structure | |
| CN203103468U (en) | Terahertz wave filter of periodic double ring and double opening resonance square ring structure | |
| CN203134939U (en) | Terahertz wave absorber with periodic square dual-ring dual-opening structure | |
| CN203218412U (en) | Terahertz wave absorber with a periodic annular structure | |
| CN203134938U (en) | Periodic concentric double ring structure terahertz wave absorber | |
| CN203180016U (en) | Terahertz wave absorber of periodic split ring-shaped structure | |
| CN203150679U (en) | Terahertz wave absorber with periodic metal clip structure | |
| CN203260695U (en) | Periodic quasi-star-shaped terahertz wave absorber | |
| CN203232941U (en) | Periodical metal terahertz wave absorber | |
| CN202384451U (en) | Terahertz wave absorber in periodical cross structure | |
| CN203134936U (en) | Terahertz wave absorber with periodic opening square annular structure | |
| CN203134941U (en) | Terahertz filter with periodic double-opening resonance square ring structure | |
| CN203103469U (en) | Terahertz wave filter of periodic opening resonance square ring structure | |
| CN202034459U (en) | Terahertz wave filter with cyclical dual-opening hollow square-shaped hollow-out structure | |
| CN203707291U (en) | Periodic biscuit-shaped teraHertz wave filter | |
| CN203134937U (en) | Periodic opening resonance ring structure terahertz wave filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130925 Termination date: 20150114 |
|
| EXPY | Termination of patent right or utility model |