CN202384451U - Terahertz wave absorber in periodical cross structure - Google Patents
Terahertz wave absorber in periodical cross structure Download PDFInfo
- Publication number
- CN202384451U CN202384451U CN2011205381406U CN201120538140U CN202384451U CN 202384451 U CN202384451 U CN 202384451U CN 2011205381406 U CN2011205381406 U CN 2011205381406U CN 201120538140 U CN201120538140 U CN 201120538140U CN 202384451 U CN202384451 U CN 202384451U
- Authority
- CN
- China
- Prior art keywords
- metal
- wave absorber
- crux
- thz wave
- transport layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Aerials With Secondary Devices (AREA)
Abstract
The utility model discloses a terahertz wave absorber in a periodical cross structure, which comprises a signal input end, a transmission layer, a base body and a metal layer structure, wherein the transmission layer, the base body and the metal layer structure are connected orderly; the thickness of the transmission layer is 1-2 mum; the transmission layer comprises N*N cross metal structure units which are arranged equidistantly; N is a natural number; the cross metal structure units comprise two transverse H-shaped structures of which the centers are vertical and intercrossed; and a signal is input from the signal input end and reaches to the metal layer structure through the transmission layer and the base body so as to realize to absorb the terahertz wave. The terahertz wave absorber in the periodical cross structure has the advantages of simple structure, small size, small volume, light weight, material saving, convenient manufacture and the like.
Description
Technical field
The utility model relates to absorber, relates in particular to a kind of THz wave absorber of periodicity cross structure.
Background technology
THz wave in electromagnetic spectrum between microwave and infrared radiation, wave-length coverage from 30 μ m to 3000 μ m.Until the eighties in 20th century, to THz wave each side The Characteristic Study with understand also very limitedly, thereby be called as so-called between far infrared and the millimeter wave " Terahertz space ".In the last few years, the research of the actual generating technique in Terahertz source had obtained very big progress.Produce the appearance of more powerful continuous THz wave method along with QCL, free electron laser, light wave difference frequency method and through optical rectification etc.; And the progress of the Terahertz detection aspects such as research of superhet and direct detector, Terahertz Technology becomes the focus of broad research in the world wide gradually.A lot of in the world at present countries all carry out the research of Terahertz aspect energetically, and a lot of at home colleges and universities and research institute are engaged in Terahertz research.
The Terahertz system mainly is made up of radiation source, sensitive detection parts and various function element.In practical application, the THz wave absorber is with its relatively low volume, and density is low, and the narrow-band response has important use in the Terahertz thermal imaging.THz wave absorber structure current domestic and international research and that proposed seldom, these structures are often very complicated, and difficult in the actual fabrication process, cost is higher, and is also high with the processing environment requirement to processing technology.So press for development simple in structure, that size is little, the THz wave absorber of being convenient to processing and fabricating supports the THz wave application is proposed.
Summary of the invention
The purpose of the utility model is the deficiency that overcomes prior art, and a kind of THz wave absorber of periodicity cross structure is provided.
Periodically the THz wave absorber of cross structure comprises signal input part, transport layer, matrix, metal-layer structure; Transport layer, matrix, metal-layer structure link to each other in order; The thickness of transport layer is 1 ~ 2 μ m; Transport layer has N * N crux metal structure unit of equidistant placement, and N is a natural number, and crux metal structure unit comprises the I-shaped structure that two central vertical are intersected; Signal is imported from signal input part, and process transport layer, matrix are realized the absorption to THz wave to metal-layer structure successively.
The thickness of described matrix is 500 ~ 520 μ m.The thickness of described metal-layer structure is 1 ~ 2 μ m.The spacing of described two adjacent crux metal structure unit is 10 ~ 12 μ m.Worker's type height of the I-shaped structure that described central vertical is intersected is 50 ~ 60 μ m, and worker's molded breadth degree is 30 ~ 40 μ m.The material of described matrix is the High Resistivity Si material, and the material of transport layer is a copper, and the material of metal-layer structure is a copper.
The utlity model has that frequency absorption property is good, simple in structure, size is little, volume is little, in light weight, economical with materials, be convenient to make and etc. advantage.
Description of drawings
Fig. 1 is the structural representation of the THz wave absorber of periodicity cross structure;
Fig. 2 is the structural representation of the transport layer of the utility model;
Fig. 3 is the structural representation of the crux metal periodic unit of the utility model;
Fig. 4 is the THz wave absorber performance curve of periodicity cross structure.R is a reflectivity, and A is an absorptivity, and T is a transmitance.
Embodiment
Shown in Fig. 1 ~ 3, periodically the THz wave absorber of cross structure comprises signal input part 1, transport layer 2, matrix 3, metal-layer structure 4; Transport layer 2, matrix 3, metal-layer structure 4 link to each other in order; The thickness of transport layer 2 is 1 ~ 2 μ m; Transport layer 2 has N * N crux metal structure unit 5 of equidistant placement, and N is a natural number, and crux metal structure unit 5 comprises the I-shaped structure 6 that two central vertical are intersected; Signal arrives metal-layer structure 4 through transport layer 2, matrix 3 successively from signal input part 1 input, realizes the absorption to THz wave.
The thickness of described matrix 3 is 500 ~ 520 μ m.The thickness of described metal-layer structure 4 is 1 ~ 2 μ m.The spacing of described two adjacent crux metal structure unit 5 is 10 ~ 12 μ m.Worker's type height of the I-shaped structure 6 that described central vertical is intersected is 50 ~ 60 μ m, and worker's molded breadth degree is 30 ~ 40 μ m.The material of described matrix 3 is the High Resistivity Si material, and the material of transport layer 2 is a copper, and the material of metal-layer structure 4 is a copper.
Construction unit number N=100, the thickness of matrix are 500 μ m.The thickness of metal-layer structure is 1 μ m.The spacing of two adjacent crux metal periodic units is 10 μ m.Worker's type height of the I-shaped structure that central vertical is intersected is 55 μ m, and worker's molded breadth degree is 35 μ m.The material of matrix is the High Resistivity Si material, and the material of crux metal transport layer is a copper, and the material of metal-layer structure is a copper.The performance curve that records the THz wave absorber with the terahertz time-domain spectroscopy appearance is as shown in Figure 4.When center frequency points was 0.7352THz, the THz wave absorptivity was 0.98, showed that this structure has good THz wave absorbability.
Claims (6)
1. the THz wave absorber of a periodicity crux structure is characterized in that comprising signal input part (1), transport layer (2), matrix (3), metal-layer structure (4); Transport layer (2), matrix (3), metal-layer structure (4) link to each other in order; The thickness of transport layer (2) is 1 ~ 2 μ m; Transport layer (2) has N * N the crux metal structure unit (5) of equidistant placement; N is a natural number, and crux metal structure unit (5) comprises the I-shaped structure (6) that two central vertical are intersected; Signal passes through transport layer (2), matrix (3) to metal-layer structure (4) successively from signal input part (1) input, realizes the absorption to THz wave.
2. the THz wave absorber of a kind of periodicity crux structure according to claim 1, the thickness that it is characterized in that described matrix (3) are 500 ~ 520 μ m.
3. the THz wave absorber of a kind of periodicity crux structure according to claim 1, the thickness that it is characterized in that described metal-layer structure (4) are 1 ~ 2 μ m.
4. the THz wave absorber of a kind of periodicity crux structure according to claim 1, the spacing that it is characterized in that described two adjacent crux metal structure unit (5) is 10 ~ 12 μ m.
5. the THz wave absorber of a kind of periodicity crux structure according to claim 1 is characterized in that worker's type height of the I-shaped structure (6) that described central vertical is intersected is 50 ~ 60 μ m, and worker's molded breadth degree is 30 ~ 40 μ m.
6. the THz wave absorber of a kind of periodicity crux structure according to claim 1, the material that it is characterized in that described matrix (3) is the High Resistivity Si material, and the material of transport layer (2) is a copper, and the material of metal-layer structure (4) is a copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205381406U CN202384451U (en) | 2011-12-21 | 2011-12-21 | Terahertz wave absorber in periodical cross structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205381406U CN202384451U (en) | 2011-12-21 | 2011-12-21 | Terahertz wave absorber in periodical cross structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202384451U true CN202384451U (en) | 2012-08-15 |
Family
ID=46632930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011205381406U Expired - Fee Related CN202384451U (en) | 2011-12-21 | 2011-12-21 | Terahertz wave absorber in periodical cross structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202384451U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104111110A (en) * | 2014-07-24 | 2014-10-22 | 电子科技大学 | Top-end-extended cross terahertz absorption structure and application thereof |
| CN105005159A (en) * | 2015-07-02 | 2015-10-28 | 北京航空航天大学 | High-speed graphene terahertz modulator |
-
2011
- 2011-12-21 CN CN2011205381406U patent/CN202384451U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104111110A (en) * | 2014-07-24 | 2014-10-22 | 电子科技大学 | Top-end-extended cross terahertz absorption structure and application thereof |
| CN104111110B (en) * | 2014-07-24 | 2015-12-30 | 电子科技大学 | The cross Terahertz absorbing structure of top expansion and application thereof |
| CN105005159A (en) * | 2015-07-02 | 2015-10-28 | 北京航空航天大学 | High-speed graphene terahertz modulator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Bozzola et al. | Broadband light trapping with disordered photonic structures in thin‐film silicon solar cells | |
| Liu et al. | Tunable absorption enhancement in electric split-ring resonators-shaped graphene arrays | |
| CN203232940U (en) | Terahertz wave filter with periodical square opening ring structures | |
| Wang et al. | Infrared frequency-tunable coherent thermal sources | |
| Zhu et al. | An approach to configure low-loss and full transmission metamaterial based on electromagnetically induced transparency | |
| CN202384451U (en) | Terahertz wave absorber in periodical cross structure | |
| CN202513262U (en) | Periodicity open-type double-circular-ring structure terahertz wave absorber | |
| CN202383398U (en) | Periodic symmetric C-type structured terahertz wave absorber | |
| CN202167588U (en) | Terahertz wave filter with periodical hollow structures | |
| CN203134940U (en) | Periodic concentric double-ring structure terahertz wave filter | |
| CN203180019U (en) | Terahertz wave absorber of periodic double-opening square ring-shaped structure | |
| Ullah et al. | Plasmonic perfect absorber for solar cell applications | |
| Gong et al. | A novel wideband optical absorber based on all-metal 2D gradient nanostructures | |
| CN203134939U (en) | Terahertz wave absorber with periodic square dual-ring dual-opening structure | |
| CN203218410U (en) | Terahertz wave absorber with periodic double-opening ring structure | |
| CN203150679U (en) | Terahertz wave absorber with periodic metal clip structure | |
| Burford et al. | Optimization of silver nanotoroid arrays for the absorption enhancement of silicon thin-film solar cells | |
| CN203103469U (en) | Terahertz wave filter of periodic opening resonance square ring structure | |
| CN203134941U (en) | Terahertz filter with periodic double-opening resonance square ring structure | |
| CN203180016U (en) | Terahertz wave absorber of periodic split ring-shaped structure | |
| CN203218412U (en) | Terahertz wave absorber with a periodic annular structure | |
| CN203134937U (en) | Periodic opening resonance ring structure terahertz wave filter | |
| CN203232941U (en) | Periodical metal terahertz wave absorber | |
| CN203134936U (en) | Terahertz wave absorber with periodic opening square annular structure | |
| CN202384453U (en) | Terahertz wave filter with periodic symmetric gap semi-circular structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120815 Termination date: 20131221 |