CN203134936U - Terahertz wave absorber with periodic opening square annular structure - Google Patents
Terahertz wave absorber with periodic opening square annular structure Download PDFInfo
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- CN203134936U CN203134936U CN 201320022768 CN201320022768U CN203134936U CN 203134936 U CN203134936 U CN 203134936U CN 201320022768 CN201320022768 CN 201320022768 CN 201320022768 U CN201320022768 U CN 201320022768U CN 203134936 U CN203134936 U CN 203134936U
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Abstract
The utility model discloses a terahertz wave absorber with a periodic opening square annular structure, including a signal input terminal, an opening square annular metal transmission layer, a substrate, and a metal layer structure; wherein the opening square annular metal transmission layer is connected with the substrate, the opening square annular metal transmission layer comprises 100*100 opening square annular metal periodic units; the opening square annular metal periodic unit includes an opening square annular structure; and signals are input from the signal input terminal and pass successively through the opening square annular metal transmission layer and the substrate to the metal layer structure, the opening square annular metal transmission layer realizes the selection for absorption frequency, and the metal layer structure realizes the absorption for terahertz waves. The absorber has the advantages of simple structure, small size, small volume, light weight, saving material, and easy production. The utility model discloses the terahertz wave absorber with the periodic opening square annular structure.
Description
Technical field
The utility model relates to absorber, relates in particular to the THz wave absorber of a kind of periodicity opening side loop configuration.
Background technology
Terahertz (1THz=1e
12Hz) technology is a kind of new and high technology that grows up late 1980s, is quite paid close attention in recent years, and it has considerable application prospect in fields such as basic research, commercial Application, biomedicines.
Terahertz emission was familiar with by people in 19th century, still, owing to do not have stable radiation source and a detector, was " no-man's-land " of scientific circles for the substance characteristics of Terahertz spectral coverage always.The people such as Ao Sidun of U.S.'s Bell Laboratory are when the ultrafast semiconductor phenomenon of research, found GaAs photoconduction detection effect, relevant result delivers at U.S.'s authority's magazine " science ", has caused the extensive concern of scientific circles, becomes the heat subject in 20 end of the centurys.In the practical application, the THz wave absorber is with its relatively low volume, and density is low, and the narrow-band response has important use in the Terahertz thermal imaging.My THz wave absorber structure current domestic and international research and that proposed seldom, these structures are often very complicated, and difficult in the actual fabrication process, cost is higher, and is also high to processing technology and the environmental requirement of processing side.So press for development simple in structure, that size is little, the THz wave absorber of being convenient to processing and fabricating supports the THz wave application is proposed.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and the THz wave absorber of a kind of periodicity opening side loop configuration is provided.
The utility model discloses the THz wave absorber of a kind of periodicity opening side loop configuration.It comprises signal input part, opening side's ring metal transport layer, matrix, metal-layer structure; Opening side's ring metal transport layer links to each other with matrix, comprises 100 * 100 opening side's ring metal periodic units on opening side's endless metal transport layer, and opening side's ring metal periodic unit comprises the side of ring, an opening side ring structure; Signal is imported from signal input part, successively the annular shape metal in process side transport layer, matrix, arrive metal-layer structure opening side endless metal transport layer afterwards and realize selection to absorption frequency, metal-layer structure is realized the absorption to THz wave.
The thickness of described opening side endless metal transport layer is 1～2 μ m.The thickness of described matrix is 500～520 μ m.The thickness of described metal-layer structure is 1～2 μ m.The spacing of described adjacent opening side annular periodic unit is 10～12 μ m.Described metal side ring outer radius is 65～70 μ m, and width is 8～10 μ m, and notch length is 8～10 μ m.。The material of described matrix is the High Resistivity Si material, and the material of square endless metal transport layer is copper, and the material of metal-layer structure is copper.
The utlity model has that frequency absorption is good, simple in structure, size is little, volume is little, in light weight, economical with materials, be convenient to advantages such as making.
Description of drawings
Fig. 1 is the structural representation of the THz wave absorber of periodicity opening side loop configuration;
Fig. 2 is the structural representation of opening side of the present utility model endless metal transport layer;
Fig. 3 is the structural representation of opening side of the present utility model annular periodic unit;
Fig. 4 is the THz wave absorber performance curve of the THz wave absorber of periodicity opening side loop configuration.
Embodiment
Shown in Fig. 1～3, periodically the THz wave absorber of opening side's loop configuration comprises signal input part 1, opening side's ring metal transport layer 2, matrix 3, metal-layer structure 4; Opening side's ring metal transport layer 2 links to each other with matrix 3, comprises 100 * 100 opening side's ring metal periodic units 5 on opening side's endless metal transport layer 2, and opening side's ring metal periodic unit 5 comprises the side of ring, an opening side ring structure 6; Signal is from signal input part 1 input, successively the annular shape metal in process side transport layer 2, matrix 3, arrive metal-layer structure 4 afterwards, endless metal transport layer 2 realizations in opening side's are to the selection of absorption frequency, the realization of metal level 4 structures is to the absorption of THz wave.
The thickness of described opening side endless metal transport layer 2 is 1～2 μ m.The thickness of described matrix 3 is 500～520 μ m.The thickness of described metal-layer structure 4 is 1～2 μ m.The spacing of described adjacent opening side annular periodic unit 5 is 10～12 μ m.Described metal side ring outer radius is 65～70 μ m, and width is 8～10 μ m, and notch length is 8～10 μ m.。The material of described matrix 3 is the High Resistivity Si material, and the material of square endless metal transport layer 2 is copper, and the material of metal-layer structure 4 is copper.
Embodiment 1:
It is as follows to set each parameter value: the thickness of square endless metal transport layer is 1 μ m.The thickness of matrix is 500 μ m.The thickness of metal-layer structure is 1 μ m.The spacing of an adjacent square endless metal periodic unit is 10 μ m.Metal side encircles elongated 70 μ m, and width is 8～10 μ m, and notch length is 8～10 μ m.The material of described matrix is the High Resistivity Si material, and the material of breach side's endless metal is copper, and the material of metal-layer structure is copper.Absorption coefficient formula A=1-R-T (A is absorptivity, and R is reflectivity, and T is transmitance) records this absorber absorptivity when center frequency points is 0.85THz with THz-TDS and shows to have good absorbability close to 0.99.
Claims (7)
1. the THz wave absorber of a periodicity opening side loop configuration is characterized in that comprising signal input part (1), opening side's ring metal transport layer (2), matrix (3), metal-layer structure (4); Opening side's ring metal transport layer (2) links to each other with matrix (3), comprises 100 * 100 opening side's ring metal periodic units (5) on opening side's endless metal transport layer (2), and opening side's ring metal periodic unit (5) comprises opening side's ring structure (6); Signal is imported from signal input part (1), pass through opening side's endless metal transport layer (2), matrix (3) successively, arrive metal-layer structure (4) afterwards, opening side's endless metal transport layer (2) realizes the selection to absorption frequency, and metal-layer structure (4) is realized the absorption to THz wave.
2. the THz wave absorber of a kind of periodicity according to claim 1 opening side loop configuration, the thickness that it is characterized in that described opening side's endless metal transport layer (2) is 1～2 μ m.
3. the THz wave absorber of a kind of periodicity according to claim 1 opening side loop configuration, the thickness that it is characterized in that described matrix (3) is 500～520 μ m.
4. the THz wave absorber of a kind of periodicity according to claim 1 opening side loop configuration, the thickness that it is characterized in that described metal-layer structure (4) is 1～2 μ m.
5. the THz wave absorber of a kind of periodicity according to claim 1 opening side loop configuration is characterized in that the spacing of described adjacent opening side annular periodic unit (5) is 10～12 μ m.
6. the THz wave absorber of a kind of periodicity according to claim 1 opening side loop configuration, it is characterized in that described metal openings Fang Huan (6) housing elongated be 65～70 μ m, width is 8～10 μ m, notch length is 8～10 μ m.
7. the THz wave absorber of a kind of periodicity according to claim 1 opening side loop configuration, the material that it is characterized in that described matrix (3) is the High Resistivity Si material, the material of side's endless metal transport layer (2) is copper, and the material of metal-layer structure (4) is copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320022768 CN203134936U (en) | 2013-01-14 | 2013-01-14 | Terahertz wave absorber with periodic opening square annular structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201320022768 CN203134936U (en) | 2013-01-14 | 2013-01-14 | Terahertz wave absorber with periodic opening square annular structure |
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| CN203134936U true CN203134936U (en) | 2013-08-14 |
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| CN 201320022768 Expired - Fee Related CN203134936U (en) | 2013-01-14 | 2013-01-14 | Terahertz wave absorber with periodic opening square annular structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113219576A (en) * | 2021-04-22 | 2021-08-06 | 桂林电子科技大学 | Near-field imaging method based on graphene-metal split ring resonator |
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2013
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113219576A (en) * | 2021-04-22 | 2021-08-06 | 桂林电子科技大学 | Near-field imaging method based on graphene-metal split ring resonator |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130814 Termination date: 20140114 |