CN203218412U - Terahertz wave absorber with a periodic annular structure - Google Patents
Terahertz wave absorber with a periodic annular structure Download PDFInfo
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- CN203218412U CN203218412U CN 201320022894 CN201320022894U CN203218412U CN 203218412 U CN203218412 U CN 203218412U CN 201320022894 CN201320022894 CN 201320022894 CN 201320022894 U CN201320022894 U CN 201320022894U CN 203218412 U CN203218412 U CN 203218412U
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- thz wave
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Abstract
The utility model discloses a terahertz wave absorber with a periodic annular structure, which comprises a signal input end, an annular metal transport layer, a substrate and a metal layer structure, wherein the annular metal transport layer is connected with the substrate and comprises 100*100 pieces of annular metal periodic units, and the annular metal periodic unit comprises an annular structure and a capacitance symbol shaped structure; signals are inputted from the signal input end, pass through the metal transport layer and the substrate in sequence, and reach the metal layer structure; the annular metal transport layer realizes selection of the absorption frequency; and the metal layer structure realizes absorption of terahertz waves. The terahertz wave absorber disclosed by the utility model has the advantages of simple structure, small size, small volume, light weight, material saving, convenient manufacturing and the like. The utility model discloses a terahertz wave absorber with the periodic annular structure.
Description
Technical field
The utility model relates to absorber, relates in particular to a kind of THz wave absorber of periodicity loop configuration.
Background technology
THz wave is often referred to frequency, and (or wavelength is at 0.03～3mm) electromagnetic wave at 0.1～10T Hz.Terahertz wave band is between microwave and millimeter wave and the infrared optical, is the transition region between electronics and the photonic propulsion.Because Terahertz is at the specific position of electromagnetic spectrum, the blank spot on scientific research and technology are used is a lot, so terahertz wave band is also referred to as the Terahertz blank.THz wave has superior performance, all have important researching value and application prospect at basic research subjects such as physics, chemistry and life science and application branches of learning such as medical imaging, safety inspection, product detection, space communication and weapon guidance, receive the concern of countries in the world
The people such as Ao Sidun of U.S.'s Bell Laboratory are when the ultrafast semiconductor phenomenon of research, found GaAs photoconduction detection effect, relevant result delivers at U.S.'s authority's magazine " science ", has caused the extensive concern of scientific circles, becomes the heat subject in 20 end of the centurys.In the practical application, the THz wave absorber is with its relatively low volume, and density is low, and the narrow-band response has important use in the Terahertz thermal imaging.
My THz wave absorber structure current domestic and international research and that proposed seldom, these structures are often very complicated, and difficult in the actual fabrication process, cost is higher, requires also high to processing technology and processing environment.So press for development simple in structure, that size is little, the THz wave absorber of being convenient to processing and fabricating supports the THz wave application is proposed.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of THz wave absorber of periodicity loop configuration is provided.
The utility model discloses a kind of THz wave absorber of periodicity loop configuration.It comprises signal input part, endless metal transport layer, matrix, metal-layer structure; The endless metal transport layer links to each other with matrix, comprises 100 * 100 endless metal periodic units on the endless metal transport layer, and the endless metal periodic unit comprises an annular ring structure and electric capacity symbol shape structure; Signal is imported from signal input part, passes through annular shape metal transport layer, matrix successively, arrives the realization of metal-layer structure endless metal transport layer to the selection of absorption frequency afterwards, and metal-layer structure is realized the absorption to THz wave.
The thickness of described endless metal transport layer is 1～2 μ m.The thickness of described matrix is 400～500 μ m.The thickness of described metal-layer structure is 1～2 μ m.The spacing of adjacent described annular periodic unit is 10～12 μ m.Described becket outer radius is 65～70 μ m, and width is 4～5 μ m.Described electric capacity symbol shape structure, metal width is 4～5 μ m, and gap length is 8～10 μ m, and the length of both sides, space metal is 12～16 μ m.The material of described matrix is the High Resistivity Si material, and the material of endless metal transport layer is copper, and the material of metal-layer structure is copper.
The utlity model has that frequency absorption is good, simple in structure, size is little, volume is little, in light weight, economical with materials, be convenient to advantages such as making.
Description of drawings
Fig. 1 is the structural representation of the THz wave absorber of periodicity loop configuration;
Fig. 2 is the structural representation of endless metal transport layer of the present utility model;
Fig. 3 is the structural representation of annular periodic unit of the present utility model;
Fig. 4 is the THz wave absorber performance curve of the THz wave absorber of periodicity loop configuration.
Embodiment
Shown in Fig. 1～3, periodically the THz wave absorber of loop configuration comprises signal input part 1, endless metal transport layer 2, matrix 3, metal-layer structure 4; Endless metal transport layer 2 links to each other with matrix 3, comprises 100 * 100 endless metal periodic units 5 on the endless metal transport layer 2, and endless metal periodic unit 5 comprises an annular ring structure 6 and electric capacity symbol shape structure 7; Signal passes through annular shape metal transport layer 2, matrix 3 successively, arrives metal-layer structure 4 afterwards from signal input part 1 input, the selection that endless metal transport layer 2 realizes absorption frequency, and metal level 4 structures realize the absorption to THz wave.
The thickness of described endless metal transport layer 2 is 1～2 μ m.The thickness of described matrix 3 is 400～520 μ m.The thickness of described metal-layer structure 4 is 1～2 μ m.The spacing of adjacent described annular periodic unit 5 is 10～12 μ m.Described metal ring structure 6 outer radius are 65～70 μ m, and width is 4～5 μ m.Described electric capacity symbol shape structure 7, metal width are 4～5 μ μ m, and gap length is 8～10 μ m, and the length of both sides, space metal is 12～16 μ m.The material of described matrix 3 is the High Resistivity Si material, and the material of endless metal transport layer 2 is copper, and the material of metal-layer structure 4 is copper.
Embodiment 1:
It is as follows to set each parameter value: metal structure unit number is 100, and the thickness of endless metal transport layer is 1 μ n.The thickness of matrix is 500 μ m.The thickness of metal-layer structure is 1 μ m.The spacing of adjacent endless metal periodic unit is 10 μ m.The becket outer radius is 70 μ m, and width is 5 μ m.Electric capacity symbol shape structure, metal width are 5 μ m, and gap length is 10 μ m, and the length of both sides, space metal is 16 μ m.The material of matrix is the High Resistivity Si material, and the material of breach endless metal is copper, and the material of metal-layer structure is copper.Absorption coefficient formula A=1-R-T (A is absorptivity, and R is reflectivity, and T is transmitance) records this absorber absorptivity when center frequency points is 0.4THz with THz-TDS and shows to have good absorbability close to 0.91.
Claims (8)
1. the THz wave absorber of a periodicity loop configuration is characterized in that comprising signal input part (1), endless metal transport layer (2), matrix (3), metal-layer structure (4); Endless metal transport layer (2) links to each other with matrix (3), comprises on the endless metal transport layer (2) that 100 * 100 endless metal periodic units (5), endless metal periodic unit (5) comprise a loop configuration (6) and electric capacity symbol shape structure (7); Signal is imported from signal input part (1), pass through endless metal transport layer (2), matrix (3) successively, arrive metal-layer structure (4) afterwards, endless metal transport layer (2) realizes the selection to absorption frequency, and metal-layer structure (4) is realized the absorption to THz wave.
2. the THz wave absorber of a kind of periodicity loop configuration according to claim 1, the thickness that it is characterized in that described endless metal transport layer (2) is 1～2 μ m.
3. the THz wave absorber of a kind of periodicity loop configuration according to claim 1, the thickness that it is characterized in that described matrix (3) is 400～500 μ m.
4. the THz wave absorber of a kind of periodicity loop configuration according to claim 1, the thickness that it is characterized in that described metal-layer structure (4) is 1～2 μ m.
5. the THz wave absorber of a kind of periodicity loop configuration according to claim 1, the spacing that it is characterized in that adjacent described annular periodic unit (5) is 10～12 μ m.
6. the THz wave absorber of a kind of periodicity loop configuration according to claim 1 is characterized in that described metal ring structure (6) outer radius is 65～70 μ m, and width is 4～5 μ m.
7. the THz wave absorber of a kind of periodicity loop configuration according to claim 1 is characterized in that described electric capacity symbol shape structure (7), and metal width is 4～5 μ m, and gap length is 8～10 μ m, and the length of both sides, space metal is 12～16 μ m.
8. the THz wave absorber of a kind of periodicity loop configuration according to claim 1, the material that it is characterized in that described matrix (3) is the High Resistivity Si material, and the material of endless metal transport layer (2) is copper, and the material of metal-layer structure (4) is copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 201320022894 CN203218412U (en) | 2013-01-14 | 2013-01-14 | Terahertz wave absorber with a periodic annular structure |
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| CN 201320022894 CN203218412U (en) | 2013-01-14 | 2013-01-14 | Terahertz wave absorber with a periodic annular structure |
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| CN203218412U true CN203218412U (en) | 2013-09-25 |
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| CN 201320022894 Expired - Fee Related CN203218412U (en) | 2013-01-14 | 2013-01-14 | Terahertz wave absorber with a periodic annular structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115279162A (en) * | 2022-08-01 | 2022-11-01 | 南京大学 | Perfect absorber and its preparing method |
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2013
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115279162A (en) * | 2022-08-01 | 2022-11-01 | 南京大学 | Perfect absorber and its preparing method |
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| C14 | Grant of patent or utility model | ||
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| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130925 Termination date: 20140114 |