CN105005159A - High-speed graphene terahertz modulator - Google Patents
High-speed graphene terahertz modulator Download PDFInfo
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- CN105005159A CN105005159A CN201510382058.1A CN201510382058A CN105005159A CN 105005159 A CN105005159 A CN 105005159A CN 201510382058 A CN201510382058 A CN 201510382058A CN 105005159 A CN105005159 A CN 105005159A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 61
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 239000010410 layer Substances 0.000 claims description 37
- 241000283080 Proboscidea <mammal> Species 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000002356 single layer Substances 0.000 claims description 5
- 239000002127 nanobelt Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- -1 polyethylene terephthalate Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 8
- 230000010354 integration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 238000004891 communication Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012237 artificial material Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/516—Details of coding or modulation
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a high-speed graphene terahertz modulator. According to the modulator, a metamaterial unit is adopted as a basic structure; a graphene transistor is adopted; the on-off of the opening of the metamaterial unit is adjusted and controlled through changing the grid voltage of the graphene transistor; and therefore, high-speed and effective modulation on terahertz waves can be realized. With the high-speed graphene terahertz modulator of the invention adopted, the modulation rate of a traditional metamaterial terahertz modulator can be effectively improved, and high-speed and high efficiency modulation on the terahertz waves can be realized. The high-speed graphene terahertz modulator of the invention can work under room temperature, can be manufactured through adopting existing processing technologies, and can be miniaturized and has high integration degree.
Description
Technical field
The present invention relates to Terahertz function element technical field, specifically refer to a kind of high speed Graphene Terahertz modulator, it can at room temperature be modulated THz wave fast and effectively.
Background technology
Terahertz (Terahertz, THz) ripple is often referred to the electromagnetic radiation (1THz=10 of frequency in 0.1 ~ 10THz (wavelength is in 3mm ~ 30 μm) scope
12hz).An oscillation frequency is the electromagnetic wave of 1THz, and its oscillation period is 1ps (1ps=10
-12s), corresponding wavelength is 300 μm.Frequency is the energy of the photon of 1THz is 4.1MeV, and corresponding to 33 wave numbers, its characteristic temperature is 48K.As can be seen here, THz wave has the performance of many uniquenesses such as transient state, broadband property, coherence, low energy.Along with the progress of process technology, Terahertz space is constantly filled up, Terahertz Technology more and more shows its various application in productive life, especially in the communications field, new channel resource is also badly in need of in the exhaustion of simultaneous communications channel resource, therefore, Terahertz communication becomes the focus be concerned in recent years.Terahertz modulator as Primary Component THz wave being carried out to control treatment, at field important roles such as space communtication, short haul connection and safety detection.
Because occurring in nature lacks the material that directly can control THz wave, the slower development of Terahertz modulator, until 21 century surpasses the appearance of medium, the realization for Terahertz modulator provides an effective approach.Super medium, by embedding the periodicity of geometry in particular or the fundamental resonance unit of no periodic array in traditional medium material, constructs the artificial material of the electromagnet characteristic that nature medium does not have.It, by the geomery etc. of artificial design resonant element, carries out control accurate to additional electromagnetic field.2006, automatically controlled super medium Terahertz modulator was implemented first and verifies, thereafter, each research group has carried out a lot of exploration and improvement to automatically controlled super medium Terahertz modulator in depth of modulation, modulation rate and polarization characteristic etc.The automatically controlled metal-semiconductor of tradition surpass medium Terahertz modulator have can at room temperature work, volume is little, be convenient to integrated with complanation etc. advantage, but, its modulation rate, by the impact of the larger RC time constant of device self and semiconductor carriers mobility, urgently further improves.
Graphene is a kind of Two-dimensional Carbon material, and being the general designation of single-layer graphene, bilayer graphene and few layer graphene, is the hardest the thinnest nano material known in the world.It has the coefficient of heat conductivity up to 5300M/mK, 15000cm
2the normal temperature electron mobility of/Vs, than copper or the lower resistivity of silver.Since 2004 it is found that the self-existent two dimensional crystal Graphene of energy, it shows unique character (bipolarity field effect in electricity, optics, calorifics etc., the mobility of superelevation, band gap regulates and controls, quantum Hall effect, light transmission etc.), attracted a large amount of researchers to further investigate it, and predict that it is integrated at micro-nano electronics, application prospect wide in energy storage material, sensor, compound substance etc.
Summary of the invention
The object of the invention is to propose a kind of new material and surpass medium terahertz wave modulator, surpass the low deficiency such as grade of medium Terahertz modulators modulate speed to overcome conventional metals-semiconductor.
For achieving the above object, present invention employs following technical scheme:
Grapheme transistor is combined with super medium modulation unit group, utilize the high speed dynamic perfromance of grapheme transistor and super medium to electromagnetic precision controllability, regulate and control the break-make of super media units opening by changing grapheme transistor grid voltage, thus realize effectively modulating the high speed of THz wave.
High speed Graphene Terahertz modulator provided by the invention comprises grapheme transistor (comprising substrate, graphene layer, cushion, source electrode, drain and gate) array and super medium modulation unit group (comprise more than 4 sphere of movements for the elephants types and surpass media units, pole plate A and pole plate B).Grapheme transistor array period and super medium modulation list tuple structure match, and sphere of movements for the elephants type surpasses media units opening two ends and is connected with drain electrode with the metal source of grapheme transistor respectively.
Described graphene layer, cushion and super media units are prepared over the substrate from top to bottom successively, described super media units is matrix pattern structure, corresponding four openings of four drift angles of matrix pattern structure, the side a and b of each opening arranges source electrode and drain electrode respectively, and described source electrode and drain electrode all form Ohmic contact with graphene layer; Described grid is positioned in the middle of source electrode and drain electrode, in parallel or vertical relation between grid.Described grid is connected with pole plate B, and described source electrode is all connected with pole plate A with drain electrode.
Described grapheme transistor array and super medium modulation unit group fill separation layer, and described separation layer height is consistent with super media units height, can isolate the electrode in grapheme transistor and protect.
The present invention has the following advantages:
(1) Graphene itself there is very high carrier mobility (can up to 25000cm
2/ VS) and very little resistance characteristic, grapheme transistor has high speed characteristics, and therefore this device can realize the High Speed Modulation of THz wave, and modulation rate can up to 300MHz.
(2) by regulating the Fermi level of Graphene, grapheme material can be made to have transparent characteristic at terahertz wave band, single-layer graphene is utilized to replace conventional semiconductors, graphene nanobelt or bilayer graphene replace metal as the grid of grapheme transistor, the THz wave transmitance of device can be increased, be conducive to the depth of modulation improving device, depth of modulation can up to more than 90%.
(3) the present invention is based on super medium, a kind of planar structure of two dimension, device architecture miniaturization, is conducive to integrated development.
(4) symmetrical sphere of movements for the elephants shape structure surpasses medium and has polarization insensitive characteristic.
(5) the present invention can at room temperature work, and is easy to operation, significantly can expands the range of application of THz wave.
(6) application foundation of Graphene in compliant conductive field has certain directive significance to the flexible Terahertz modulator of development.
Accompanying drawing explanation
Fig. 1 is Graphene Terahertz modulator global design conceptual scheme;
Fig. 2 is the structural plan figure of Graphene Terahertz modulator;
Fig. 3 is the side view of Graphene Terahertz modulator, comprises epitaxial layer structure and electrode.
In figure:
1-source electrode; 2-drains; 3-grid; 4-surpasses media units
5-graphene layer; 6-pole plate A; 7-pole plate B; 8-separation layer;
9-substrate; 10-cushion.11-A holds 12-B end
Embodiment
The present invention proposes a kind of mode grapheme transistor combined with super medium modulation unit group, realize design proposal that is effective to space THz wave, High Speed Modulation.Below in conjunction with accompanying drawing, the present invention is described in further detail.
As shown in Figures 1 to 3, high speed Graphene Terahertz modulator provided by the invention comprises substrate 9, graphene layer 5, cushion 10, source electrode 1, drain electrode 2, grid 3, separation layer 8, pole plate A6, pole plate B7 and super media units 4.Wherein, substrate 9, graphene layer 5, cushion 10, source electrode 1, drain electrode 2 and grid 3 form grapheme transistor, the super medium modulation unit group of pole plate A6, pole plate B7 and super media units 4 composition.Described graphene layer 5 is grown on substrate 9, prepares single-layer graphene as graphene layer 5 by stripping technology, graphene layer 5 grows the thick semiconductor buffer layer of 10nm ~ 30nm 10.Active region mesa is prepared by lithographic technique, then the source electrode 1 of grapheme transistor and drain electrode 2 is made to form Ohmic contact with graphene layer 5 by the technology such as photoetching and metal-stripping, make grapheme transistor grid 3 by roller stamping technique and Langmuir-Blodget (LB) technique again, grid 3 and graphene layer 5 form Schottky contacts.Prepare excess of export media units modulation group structure (comprise more than 4 sphere of movements for the elephants types and surpass media units 4, pole plate A6 and pole plate B7) by technology such as ultraviolet photolithographic or electron beam exposure, electron beam evaporation, metal-strippings, and plating thickeies to 2 μm.In super media units modulation group, sphere of movements for the elephants type surpasses corresponding four openings of four drift angles of media units 4, and the A end 11 of each opening and B hold 12 2 to be connected with draining with the source electrode 1 of grapheme transistor respectively, and pole plate B7 is connected with grid 3.As shown in Figure 3, described source electrode 1 and drain electrode 2 lay respectively at the lower surface that described A holds 11 and B end 12, and form Ohmic contact between graphene layer 5.Finally on made grapheme transistor array and super medium modulation unit group, fill separation layer 8, be used for being protected.Described separation layer 8 height is consistent with the height that sphere of movements for the elephants type surpasses media units 4.In the present invention, each sphere of movements for the elephants type surpasses media units 4 and is made up of 4 SRR (metal resonant ring), each SRR by wide be 4 μm, thick be 2 μm metallic film form, comprise a parallel open, 4 openings that each sphere of movements for the elephants type surpasses media units lay respectively on four angles of sphere of movements for the elephants type structure.The grid 3 of grapheme transistor is positioned in the middle of source electrode 1 and drain electrode 2, is parallel or vertical relation, makes can remove crystal orientation mismatch problem in manufacturing process in the present invention between grid 3.This Graphene Terahertz modulator frequency of operation f is calculated as:
Wherein, L is the equivalent inductance value of super media units, and C is the equivalent capacitance value of super media units.
In technique scheme, described substrate 9 material can be silit, sapphire or polyethylene terephthalate etc., graphene layer 5 is single-layer graphene, the grid 3 of grapheme transistor is graphene nanobelt or bilayer graphene, source electrode 1 and the drain electrode 2 of grapheme transistor generally adopt Ti, Al, Ni or Au etc. that the metal of other characteristic close also can be adopted to replace, super media units 4, pole plate A6 and pole plate B7 material are Au, cushion 10 material is generally intrinsic semiconductor, and separation layer 8 adopts insulating material.
Graphene Terahertz modulator of the present invention is the through and off controlling source electrode 1 by changing grid 3 magnitude of voltage size and drain between 2, time when between source electrode 1 and drain electrode 2 in pinch off state, the frequency of spatial is that the THz wave energy of frequency of operation f is bound in super media units opening part, and now frequency is that the transmitance of the THz wave of f is minimum; Time when between source electrode 1 and drain electrode 2 in connected state, the frequency of spatial be the THz wave of f through super media units, now its transmitance is maximum, realizes the Terahertz wave modulation to this frequency of operation point place thus.Manufacture craft of the present invention comprises following concrete steps:
(1) utilize the technique such as semiconductor material growing and stripping to complete the preparation of substrate (comprising substrate 9, graphene layer 5 and cushion 10), substrate 9 is prepared graphene layer 5 and cushion 10 successively.
(2) active region mesa is prepared by lithographic technique.
(3) by source electrode 1 and the drain electrode 2 of the fabrication techniques such as photoetching and metal-stripping grapheme transistor, source electrode 1 and drain electrode 2 is made to form Ohmic contact with graphene layer 5.
(4) completed the making of Graphene grid 3 by roller stamping technique and Langmuir-Blodget (LB) technique etc., make grid 3 and graphene layer 5 form Schottky contacts.
(5) prepare excess of export medium modulation unit group (comprise more than 4 sphere of movements for the elephants types and surpass media units 4, pole plate A6 and pole plate B7) by technology such as ultraviolet photolithographic or electron beam exposure, electron beam evaporation, metal-strippings, and plating thickeies.
(7) separation layer 8 is filled.
(8) by a point packing technique for existing maturation, device is encapsulated, thus prepared the high speed Terahertz modulator of this adjustable working Frequency point.
Claims (5)
1. a high speed Graphene Terahertz modulator, it is characterized in that: comprise grapheme transistor array and super medium modulation unit group, grapheme transistor array period and super medium modulation list tuple structure match, and sphere of movements for the elephants type surpasses media units opening two ends and is connected with drain electrode with the metal source of grapheme transistor respectively; Grapheme transistor in described grapheme transistor array comprises substrate, graphene layer, cushion, source electrode, drain and gate; The sphere of movements for the elephants type that described super medium modulation unit group comprises more than pole plate A, pole plate B and four surpasses media units.
2. a kind of high speed Graphene Terahertz modulator according to claim 1, it is characterized in that: described graphene layer, cushion and super media units are prepared over the substrate from top to bottom successively, described super media units is sphere of movements for the elephants type structure, corresponding four openings in four angles of sphere of movements for the elephants type structure, the side a and b of each opening arranges source electrode and drain electrode respectively, and described source electrode and drain electrode all form Ohmic contact with graphene layer; Described grid is positioned in the middle of source electrode and drain electrode, in parallel or vertical relation between grid; Described grid is connected with pole plate B, and described source electrode is all connected with pole plate A with drain electrode; Grid and graphene layer form Schottky contacts.
3. a kind of high speed Graphene Terahertz modulator according to claim 1, is characterized in that: described grapheme transistor array and super medium modulation unit group fill separation layer, and described separation layer height is consistent with super media units height.
4. a kind of high speed Graphene Terahertz modulator according to claim 1, is characterized in that: described graphene layer is single-layer graphene; Grid is graphene nanobelt or bilayer graphene; Buffer layer thickness is 10nm ~ 30nm; Each sphere of movements for the elephants type surpasses media units and is made up of 4 metal resonant rings, each metal resonant ring by wide be 4 μm, thick be 2 μm metallic film form.
5. a kind of high speed Graphene Terahertz modulator according to claim 1, is characterized in that: described backing material selects silit, sapphire or polyethylene terephthalate; Source electrode and drain material select Ti, Al, Ni or Au metal; Super media units, pole plate A and pole plate B Material selec-tion Au, cushioning layer material selects intrinsic semiconductor insulating material.
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Cited By (4)
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| CN108199782A (en) * | 2018-02-27 | 2018-06-22 | 桂林电子科技大学 | A kind of transmission-type THz wave encoder and coded system based on plasma device |
| CN108983411A (en) * | 2018-07-23 | 2018-12-11 | 郑州大学 | A kind of magnetic field regulation terahertz wave modulator and preparation method thereof |
| CN109164600A (en) * | 2018-09-26 | 2019-01-08 | 北京交通大学 | Integrated two-dimensional Terahertz Meta Materials spectromodulator and preparation method thereof |
| CN110095888A (en) * | 2019-05-07 | 2019-08-06 | 电子科技大学 | Terahertz modulator and system and method based on silicon substrate micro-structure on SOI |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108199782A (en) * | 2018-02-27 | 2018-06-22 | 桂林电子科技大学 | A kind of transmission-type THz wave encoder and coded system based on plasma device |
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| CN108983411A (en) * | 2018-07-23 | 2018-12-11 | 郑州大学 | A kind of magnetic field regulation terahertz wave modulator and preparation method thereof |
| CN108983411B (en) * | 2018-07-23 | 2020-07-07 | 郑州大学 | Terahertz wave modulator for magnetic field regulation and control and manufacturing method thereof |
| CN109164600A (en) * | 2018-09-26 | 2019-01-08 | 北京交通大学 | Integrated two-dimensional Terahertz Meta Materials spectromodulator and preparation method thereof |
| CN110095888A (en) * | 2019-05-07 | 2019-08-06 | 电子科技大学 | Terahertz modulator and system and method based on silicon substrate micro-structure on SOI |
| CN110095888B (en) * | 2019-05-07 | 2021-07-02 | 电子科技大学 | Terahertz modulator based on silicon-based microstructure on SOI (silicon on insulator), system and method |
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Application publication date: 20151028 |
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