CN109932765A - A kind of light absorber and preparation method thereof based on two-dimensional grating - Google Patents
A kind of light absorber and preparation method thereof based on two-dimensional grating Download PDFInfo
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Abstract
The present invention a kind of light absorber based on two-dimensional grating and preparation method thereof is disclosed, it can be achieved that external incident light different frequency range, high efficiency absorbs.The light absorption structure includes the metal mesh compartment, dielectric layer, metal barrier and the substrate that successively use from top to bottom, metal barrier meets incident light and causes surface plasma bulk effect in dielectric layer surface, incident radiation forms surface plasma in metal mesh compartment and dielectric layer interface simultaneously, and two kinds of plasmas being spatially separated carry out symmetrical plasma coupling in the dielectric layer.The present invention has both the high efficiency absorption to different visible light wave band, while extinction characteristic can be inhibited significantly to the susceptibility of incident light beam strikes angle.
Description
Technical field
The invention belongs to electromagnetic protection technical field, it is related to a kind of light absorber structure and production, and in particular to Yi Zhongji
In the light absorber and preparation method thereof of two-dimensional grating.
Background technique
Artificial electromagnetic Meta Materials refer to what a kind of permittivity ε and magnetic permeability μ can be controlled artificially, and the ginseng of two parameters
The NEW TYPE OF COMPOSITE artificial material that number can just born.Artificial electromagnetic Meta Materials have shown the electromagnetism being not present in nature material and have rung
It answers, such as: negative index, artificial magnetic response, super focusing.Another advantage of electromagnetism Meta Materials is that resonance structure can design
Very big range, from radio-frequency range to terahertz wave band and to infrared band.Currently, in specific band wide-ultra material etc.
Gas ions structure shows biggish absorption, this is primarily due to ε < 0, μ < 0 and cause, this novel artificial electromagnetic Meta Materials
It is expected to the replacer as electromagnetic wave absorber.
From the point of view of current developing stage, artificial electromagnetic Meta Materials have one in terms of material and entire device architecture two
A little interim progress；Pendry et al. had devised periodical metal rod structure at 1996 and 1999 respectively
(J.B.Pendry,A.J.Holden,W.J.Stewart,I.Youngs.[J].Phys.Rev.Lett.1996,76,4773.)
With periodical metal openings resonance ring structure (J.B.Pendry, A.J.Holden, D.J.Robbins, W.J.Stewart.IEEE
Trans.Microwave Theory Tech.1999,47,2075.), to realize negative permittivity and negative magnetoconductivity.
2009, Avizour et al. realized desirable absorption in infrared band based on a kind of perfect impedance matching material with negative refractive index
(X.Wang,A.A.Belyanin,S.A.Crooker,D.M.Mittleman&J.Kono.Interference-induced
terahertz transparency in a semiconductor magneto-plasma.[J].Nature Physics,
2009,6:126–130).Later researchers are designed again as hexagonal apertures ring structure (Cheng Y, Yang H, Cheng
Z,Wu N.Perfect metamaterial absorber based on a split-ring-cross resonator
[J].Applied Physics A.2010；102 (1): 99-103.), dendritic structure (Zhu W, Zhao X, Gong B, Liu
L,Su B.Optical metamaterial absorber based on leaf-shaped cells[J].Applied
Physics A.2010；102 (1): 147-51) etc. other left-handed material.Pass through reasonable parameter setting, incident light to structure
In electromagnetic wave be both not reflected or be not transmitted, but be lost in intermediate dielectric layer.Research has focused largely on red at present
Wave section, it is seldom in the research of visible light wave range, and sub-wavelength metal nanostructure is in visible wavelength range, due to surface
Plasma effect is significant and shows unique optical characteristics, and the energy of these resonance is heavily dependent on material particles
Shape, size and material property, but be limited only to theoretically study at present, this is because preparing nano-scale in practice
Figure have a very big difficulty, and the present invention is exactly to prepare device in solving the problems, such as to practice.
Summary of the invention
The present invention is directed to background technique described problem, proposes a kind of based on the light absorber of two-dimensional grating and its production side
Method.
In order to achieve the above object, the present invention uses following scheme:
A kind of light absorber based on two-dimensional grating, which is characterized in that the light absorber structure include from top to bottom according to
Metal mesh compartment, dielectric layer, metal barrier and the substrate of secondary use, metal barrier meet incident light in dielectric layer surface
Cause surface plasma bulk effect, while incident radiation forms surface plasma in metal mesh compartment and dielectric layer interface
Body, two kinds of plasmas being spatially separated carry out symmetrical plasma coupling in the dielectric layer；The metal grill
Layer uses palladium Pd, and dielectric layer uses silica SiO2, for metal barrier using gold Au, substrate is silicon wafer.
A kind of production method of the light absorber based on two-dimensional grating, which comprises the steps of:
A: it is clear for ultrasound in 99.99% dehydrated alcohol and deionized water that silicon wafer is individually positioned in acetone, mass fraction
15-30min is washed, is first dried up with nitrogen gun, then is dried with the baking platform higher than 100 DEG C, cooling 3-5min；
B: one layer of chromium Cr is sputtered on silicon wafer as connection metal using dc sputtering processes, is evacuated 4-6h, vacuum degree is low
In 5 × 10-4Pa, sputtering power 80-100w, sputtering pressure 0.5Pa, sputtering time 3-5s then use d.c. sputtering
Technique sputters one layer of gold Au, is evacuated 4-6h, and vacuum degree is lower than 5 × 10-4Pa, sputtering power 100-120w, sputtering pressure are
0.5Pa, sputtering time 20-25s, then one layer of SiO is sputtered using radio-frequency sputtering technique2, it is evacuated 6h, vacuum degree is lower than 5 × 10- 4Pa, rf sputtering power 80-100w, sputtering pressure 0.5Pa, sputtering time 15-20s；
C: using spin coating proceeding on the substrate SiO2/Au/Cr/Si sputtered one layer of methyl methacrylate MMA of spin coating,
The revolving speed of spin coating is 500r/min, time 9s at a slow speed, is quickly 2000r/min, time 50s dries on 150 DEG C of baking platform
90s is cooled to solvent in MMA and volatilizees, then one layer of polymetylmethacrylate of spin coating, dries 2- on 180 DEG C of baking platform
5min is cooled to solvent in PMMA and volatilizees；
D: system NPGS is generated with nano graph and draws the grid pattern to be exposed；
E: carrying out electron beam exposure for the substrate PMMA/MMA/SiO2/Au/Cr/Si after gluing, controls exposure region with NPGS
Domain is 55 μm, period 550nm, line width 140-200nm of 55 μ m, exposure voltage 30keV, and exposure electric current is 40-
120pA, exposure dose 65-125fc are broken by PMMA strand in the region of electron beam exposure, resolve into shorter
Chain or unimolecule MMA, are dissolved in developer solution, block developing process with deionized water or alcohol washes after development,
The purpose for realizing fixing, to form patterned soft template；
F: when vacuum degree is lower than saturated vapor pressure, diameter is after the Pd silk of 0.1mm vaporizes at high temperature, in photoetching
It forms a film in glue and substrate；
G: being dissolved photoresist using acetone, tetrahydrofuran and chloroform organic solvent, and on photoresist and substrate is disjunct
Metal Pd film will be stripped, thus the device needed for obtaining.
Further, one layer of Cr is sputtered in step B as connection metal, is evacuated 6h, vacuum degree is lower than 5 × 10-4Pa, splashes
Penetrating power is 100w, sputtering pressure 0.5Pa, sputtering time 4s.
Further, three-decker is respectively that Cr sputtering 4s, Au sputter 25s, sputtering power 100w in step B,
SiO2Sputter 15s, rf sputtering power 100w.
Further, MMA and PMMA spin coating is 500r/min, time 9s, quick 2000r/min, time at a slow speed in step C
For 50s.
Further, the period is 550nm, line width 160nm, exposure voltage 30keV in step E, and exposure electric current is
100pA。
The beneficial effects of the present invention are: compared with the practice of existing light absorber, the advantage of the invention is that proposing
A kind of novel structure of two-dimensional grating light absorber and preparation method thereof is, it can be achieved that external incident light different frequency range, high
Efficiency absorbs.The present invention has both the high efficiency absorption to different visible light wave band, while extinction characteristic can be inhibited to incidence significantly
The susceptibility of angle of light.And the production method stability is good, is influenced by environmental factor smaller, is able to achieve repeatable benefit
With.
Detailed description of the invention
Fig. 1: the structural model figure of designed two-dimensional grating light absorber in the present invention.
Fig. 2: when designed two-dimensional grating structure dosage is 65fc in the present invention SEM figure (scanning electron microscope/
SEM)。
Fig. 3: SEM figure when designed two-dimensional grating structure dosage is 95fc in the present invention.
Fig. 4: SEM figure when designed two-dimensional grating structure dosage is 125fc in the present invention.
Fig. 5: the reflection spectrogram tested in the present invention.
Specific embodiment
Below in conjunction with attached drawing and specific implementation example, invention is further explained, and the examples of the embodiments are attached
It is shown in figure, in which the same or similar labels are throughly indicated same or similar element or there is same or like function
Element.The embodiments described below with reference to the accompanying drawings are exemplary, it is intended to be used to explain the present invention, and should not be understood as
Limitation of the present invention, any modification, equivalent replacement or improvement for being made all within the spirits and principles of the present invention etc., should all
It within scope of the presently claimed invention, is not addressed in detail in the technical program, is well-known technique.
Embodiment one:
A: silicon wafer being individually positioned in acetone, dehydrated alcohol (wt99.99, AR) and deionized water and is cleaned by ultrasonic 30min,
It is first dried up with nitrogen gun, then is dried with the baking platform higher than 100 DEG C, cooling 3min；
B: sputter one layer of Cr as connection metal using dc sputtering processes on silicon wafer, is evacuated 6h, and vacuum degree is lower than 5 ×
10-4Pa, sputtering power 100w, sputtering pressure 0.5Pa, sputtering time 4s, then using dc sputtering processes sputtering one
Layer Au, is evacuated 6h, and vacuum degree is lower than 5 × 10-4Pa, sputtering power 100w, sputtering pressure 0.5Pa, sputtering time 25s,
One layer of SiO is sputtered using radio-frequency sputtering technique again2, it is evacuated 6h, vacuum degree is lower than 5 × 10-4Pa, rf sputtering power 100w,
Sputtering pressure is 0.5Pa, sputtering time 15s；
C: using spin coating proceeding, one layer of MMA of spin coating, the revolving speed of spin coating are slow on the substrate SiO2/Au/Cr/Si sputtered
Fast 500r/min, time 9s are quickly 2000r/min, and time 50s dries 90s on 150 DEG C of baking platform, is cooled to MMA
Middle solvent volatilization, then one layer of PMMA of spin coating, dry 2min on 180 DEG C of baking platform, are cooled to solvent in PMMA and volatilize；
D: the grid pattern to be exposed is drawn with NPGS；
E: carrying out electron beam exposure for the substrate PMMA/MMA/SiO2/Au/Cr/Si after gluing, controls exposure region with NPGS
Domain be 55mm × 55mm, the period be 550nm (this be by Comsol emulation get), line width 160nm, exposure voltage 30keV,
Exposing electric current is respectively 100PA, exposure dose 65fc, is broken by PMMA strand in the region of electron beam exposure, point
Solution is dissolved in developer solution at shorter chain or unimolecule MMA, insoluble with deionized water or alcohol etc. after development
The solvent cleaning of photoresist blocks developing process, the purpose of fixing is realized, to form patterned soft template；
F: when vacuum degree is lower than saturated vapor pressure, diameter is after the Pd silk of 0.1mm vaporizes at high temperature, in photoetching
It forms a film in glue and substrate；
G: being dissolved photoresist using organic solvents such as acetone, tetrahydrofuran and chloroforms, is not attached on photoresist with substrate
Metal Pd film will be stripped, thus obtain needed for device it is as shown in Figure 2.
Embodiment two:
A: silicon wafer being individually positioned in acetone, dehydrated alcohol (wt99.99, AR) and deionized water and is cleaned by ultrasonic 30min,
It is first dried up with nitrogen gun, then is dried with the baking platform higher than 100 DEG C, cooling 3min；
B: sputter one layer of Cr as connection metal using dc sputtering processes on silicon wafer, is evacuated 6h, and vacuum degree is lower than 5 ×
10-4Pa, sputtering power 100w, sputtering pressure 0.5Pa, sputtering time 4s, then using dc sputtering processes sputtering one
Layer Au, is evacuated 6h, and vacuum degree is lower than 5 × 10-4Pa, sputtering power 100w, sputtering pressure 0.5Pa, sputtering time 25s,
One layer of SiO is sputtered using radio-frequency sputtering technique again2, it is evacuated 6h, vacuum degree is lower than 5 × 10-4Pa, rf sputtering power 100w,
Sputtering pressure is 0.5Pa, sputtering time 15s；
C: using spin coating proceeding, one layer of MMA of spin coating, the revolving speed of spin coating are slow on the substrate SiO2/Au/Cr/Si sputtered
Fast 500r/min, time 9s are quickly 2000r/min, and time 50s dries 90s on 150 DEG C of baking platform, is cooled to MMA
Middle solvent volatilization, then one layer of PMMA of spin coating, dry 2min on 180 DEG C of baking platform, are cooled to solvent in PMMA and volatilize；
D: the grid pattern to be exposed is drawn with NPGS；
E: carrying out electron beam exposure for the substrate PMMA/MMA/SiO2/Au/Cr/Si after gluing, controls exposure region with NPGS
Domain be 55mm × 55mm, the period be 550nm (this be by Comsol emulation get), line width 160nm, exposure voltage 30keV,
Exposing electric current is respectively 95PA, exposure dose 65fc, is broken by PMMA strand in the region of electron beam exposure, is decomposed
It at shorter chain or unimolecule MMA, is dissolved in developer solution, with the insoluble light such as deionized water or alcohol after development
The solvent cleaning of photoresist blocks developing process, the purpose of fixing is realized, to form patterned soft template；
F: when vacuum degree is lower than saturated vapor pressure, diameter is after the Pd silk of 0.1mm vaporizes at high temperature, in photoetching
It forms a film in glue and substrate；
G: being dissolved photoresist using organic solvents such as acetone, tetrahydrofuran and chloroforms, is not attached on photoresist with substrate
Metal Pd film will be stripped, thus obtain needed for device it is as shown in Figure 3.
Embodiment three:
A: silicon wafer being individually positioned in acetone, dehydrated alcohol (wt99.99, AR) and deionized water and is cleaned by ultrasonic 30min,
It is first dried up with nitrogen gun, then is dried with the baking platform higher than 100 DEG C, cooling 3min；
B: sputter one layer of Cr as connection metal using dc sputtering processes on silicon wafer, is evacuated 6h, and vacuum degree is lower than 5 ×
10-4Pa, sputtering power 100w, sputtering pressure 0.5Pa, sputtering time 4s, then using dc sputtering processes sputtering one
Layer Au, is evacuated 6h, and vacuum degree is lower than 5 × 10-4Pa, sputtering power 100w, sputtering pressure 0.5Pa, sputtering time 25s,
One layer of SiO is sputtered using radio-frequency sputtering technique again2, it is evacuated 6h, vacuum degree is lower than 5 × 10-4Pa, rf sputtering power 100w,
Sputtering pressure is 0.5Pa, sputtering time 15s；
C: using spin coating proceeding, one layer of MMA of spin coating, the revolving speed of spin coating are slow on the substrate SiO2/Au/Cr/Si sputtered
Fast 500r/min, time 9s are quickly 2000r/min, and time 50s dries 90s on 150 DEG C of baking platform, is cooled to MMA
Middle solvent volatilization, then one layer of PMMA of spin coating, dry 2min on 180 DEG C of baking platform, are cooled to solvent in PMMA and volatilize；
D: the grid pattern to be exposed is drawn with NPGS；
E: carrying out electron beam exposure for the substrate PMMA/MMA/SiO2/Au/Cr/Si after gluing, controls exposure region with NPGS
Domain be 55mm × 55mm, the period be 550nm (this be by Comsol emulation get), line width 160nm, exposure voltage 30keV,
Exposing electric current is respectively 125pA, exposure dose 65fc, is broken by PMMA strand in the region of electron beam exposure, point
Solution is dissolved in developer solution at shorter chain or unimolecule MMA, insoluble with deionized water or alcohol etc. after development
The solvent cleaning of photoresist blocks developing process, the purpose of fixing is realized, to form patterned soft template；
F: when vacuum degree is lower than saturated vapor pressure, diameter is after the Pd silk of 0.1mm vaporizes at high temperature, in photoetching
It forms a film in glue and substrate；
G: being dissolved photoresist with organic solvents such as acetone, tetrahydrofuran and chloroforms, and on photoresist and substrate is disjunct
Metal Pd film will be stripped, so that the device needed for obtaining is as shown in Figure 4.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (6)
1. a kind of light absorber based on two-dimensional grating, which is characterized in that the light absorber structure includes from top to bottom successively
Metal mesh compartment, dielectric layer, metal barrier and the substrate of use, metal barrier meet incident light and draw in dielectric layer surface
Surface plasma effect is delivered, while incident radiation forms surface plasma in metal mesh compartment and dielectric layer interface,
Two kinds of plasmas being spatially separated carry out symmetrical plasma coupling in the dielectric layer；The metal mesh compartment is adopted
With palladium Pd, dielectric layer uses silica SiO2, for metal barrier using gold Au, substrate is silicon wafer.
2. a kind of production method of the light absorber based on two-dimensional grating, which comprises the steps of:
A: silicon wafer is individually positioned in acetone, mass fraction to be cleaned by ultrasonic 15- in 99.99% dehydrated alcohol and deionized water
30min is first dried up with nitrogen gun, then is dried with the baking platform higher than 100 DEG C, cooling 3-5min；
B: sputter one layer of chromium Cr as connection metal using dc sputtering processes on silicon wafer, is evacuated 4-6h, and vacuum degree is lower than 5 ×
10-4Pa, sputtering power 80-100w, sputtering pressure 0.5Pa, sputtering time 3-5s are then splashed using dc sputtering processes
One layer of gold Au is penetrated, 4-6h is evacuated, vacuum degree is lower than 5 × 10-4Pa, sputtering power 100-120w, sputtering pressure 0.5Pa splash
Penetrating the time is 20-25s, then sputters one layer of SiO using radio-frequency sputtering technique2, it is evacuated 6h, vacuum degree is lower than 5 × 10-4Pa, radio frequency
Sputtering power is 80-100w, sputtering pressure 0.5Pa, sputtering time 15-20s；
C: one layer of methyl methacrylate MMA of spin coating, spin coating on the substrate SiO2/Au/Cr/Si sputtered using spin coating proceeding
Revolving speed be 500r/min, time 9s at a slow speed, be quickly 2000r/min, time 50s dries 90s on 150 DEG C of baking platform,
It is cooled to solvent in MMA to volatilize, then one layer of polymetylmethacrylate of spin coating, dries 2-5min on 180 DEG C of baking platform, it is cold
But into PMMA, solvent volatilizees；
D: system NPGS is generated with nano graph and draws the grid pattern to be exposed；
E: carrying out electron beam exposure for the substrate PMMA/MMA/SiO2/Au/Cr/Si after gluing, is with NPGS control exposure area
55 55 μm of μ ms, period 550nm, line width 140-200nm, exposure voltage 30keV, exposure electric current are 40-120pA, are exposed
Light dosage is 65-125fc, is broken by PMMA strand in the region of electron beam exposure, and shorter chain or list are resolved into
Molecule MMA, is dissolved in developer solution, blocks developing process with deionized water or alcohol washes after development, realizes fixing
Purpose, to form patterned soft template；
F: when vacuum degree be lower than saturated vapor pressure when, diameter be 0.1mm Pd silk vaporize at high temperature after, photoresist with
It forms a film in substrate；
G: being dissolved photoresist using acetone, tetrahydrofuran and chloroform organic solvent, on photoresist and the disjunct metal of substrate
Pd film will be stripped, thus the device needed for obtaining.
3. the production method of the light absorber according to claim 2 based on two-dimensional grating, which is characterized in that in step B
One layer of Cr is sputtered as connection metal, is evacuated 6h, vacuum degree is lower than 5 × 10-4Pa, sputtering power 100w, and sputtering pressure is
0.5Pa, sputtering time 4s.
4. the production method of the light absorber according to claim 2 based on two-dimensional grating, which is characterized in that in step B
Three-decker is respectively that Cr sputtering 4s, Au sputter 25s, sputtering power 100w, SiO2Sputter 15s, rf sputtering power
For 100w.
5. the production method of the light absorber according to claim 2 based on two-dimensional grating, which is characterized in that in step C
MMA and PMMA spin coating is 500r/min, time 9s, quick 2000r/min, time 50s at a slow speed.
6. the production method of the light absorber according to claim 2 based on two-dimensional grating, which is characterized in that in step E
Period is 550nm, line width 160nm, exposure voltage 30keV, and exposure electric current is 100pA.
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| CN110196464A (en) * | 2019-07-01 | 2019-09-03 | 江南大学 | A kind of a kind of method and composite microstructure for realizing that ultra-wideband-light absorbs |
| CN110862088A (en) * | 2019-10-30 | 2020-03-06 | 南京大学 | Preparation method of silicon nanoneedle array with ultra-high depth-to-width ratio |
| CN111812756A (en) * | 2020-07-30 | 2020-10-23 | 西北农林科技大学 | Grating-insulation-metal three-layer structured visible light perfect absorber and processing method |
| CN113009606A (en) * | 2021-02-04 | 2021-06-22 | 江西师范大学 | Five-layer nano-material ultra-wideband perfect absorber and preparation method thereof |
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