CN114335213B - Method for preparing high-precision large-area nano structure on insulating substrate - Google Patents
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Abstract
The invention discloses a method for preparing a high-precision large-area nano structure on an insulating substrate, which introduces one or more conductive layers between a spin-coated electron beam adhesive layer and a film layer to be used for preparing a micro-nano structure, increases the release rate of high-energy electrons in the electron beam exposure process, and reduces a local electric field, thereby effectively avoiding accumulation of a large amount of charges on the surface of the insulating substrate and laying a certain technical foundation for further preparing a nano electronic device with a small-size, high-density and large-area micro-nano structure.
Description
Technical Field
The invention relates to the technical field of micro-nano processing technology and infrared single photon detection, in particular to a method for preparing a high-precision large-area nano structure on an insulating substrate.
Background
Micro-nano processing technology is one of key technologies indispensable in the miniaturization and large-scale integration processes of optoelectronic devices. At present, the minimum precision of micro-nano processing technology has been developed to below 5nm, and the performance of related equipment is continuously improved. In scientific experiments, electron beam exposure technology is generally adopted to prepare micro-nano structures, and then the required nano optoelectronic devices are finally obtained through subsequent processes such as etching and the like. Electron beam exposure is a major key process in the development of related nanoelectronic devices. Therefore, the quality of electron beam exposure is an important precondition for determining whether a micro-nano structure with large area and good uniformity can be prepared. A significant factor in reducing the quality of electron beam exposure is electron beam proximity. Because during electron beam exposure, a portion of the large number of energetic electrons incident on the electron beam resist excite exposing secondary electrons, and another portion passes through the electron beam resist to the substrate surface. At this time, if the conductivity of the substrate is good, the energetic electrons can be rapidly conducted away through the substrate to avoid charge accumulation on the substrate surface. If the substrate has poor conductivity, the high-energy electrons are difficult to release through the substrate, and can accumulate on the surface of the substrate to form a strong local electric field, and the existence of the local electric field can greatly change the motion state of secondary electrons, thereby affecting the resolution of an exposure pattern. Furthermore, if the exposed nanostructures are densely distributed, the density of energetic electrons is increased, which, for poorly conductive and even insulating substrates, undoubtedly further exacerbates the charge accumulation effect at the substrate surface. The quality of the conductivity of the substrate directly affects the severity of the electron beam proximity effect.
In the field of low temperature devices, electron beam exposure techniques are very popular. Such as superconducting nanowire single photon detectors (Superconducting Nanowire Single Photon Detector, SNSPD) developed in the beginning of the twentieth century, which is currently the best combination of single photon detectors in the near infrared band. The core detection unit of the SNSPD is a concentrated superconducting nanowire with a serpentine structure, the width of the nanowire is about 50-100 nm, the thickness of the nanowire is 3-10 nm, and the duty ratio of the nanowire is 0.3-0.8. Large photosurfaces, broad spectral response, and increased operating temperatures are several important directions of development for SNSPDs. On the one hand, from the aspect of scientific application, the SNSPD with a large photosurface has very important application prospect in the front fields of infrared astronomical exploration, bioluminescence detection and the like. This is because in these fields, the size of the signal spot received by the detector is typically tens or hundreds of micrometers, and thus the photosurface of the SNSPD needs to be larger than the area of the signal spot, thereby improving the detection efficiency. On the other hand, the current SNSPD has a wide substrate choice, wherein the substrates such as MgO, mgF 2 and Al 2O3 have the advantages of wide spectrum transparency from visible light to mid-infrared and lattice matching with a superconducting film (such as MgO and NbN superconducting films are lattice matched, so that NbN can obtain a superconducting critical transition temperature exceeding 16K at the highest), thereby being capable of being used for preparing the SNSPD with wide spectrum response, simultaneously being capable of effectively improving the working temperature (> 4.2K) of the SNSPD and greatly reducing the refrigeration cost. However, since the substrates MgO, mgF 2 and Al 2O3 are insulated, a serious electron beam proximity effect is caused during the electron beam exposure process, and the effect is more serious with the increase of the density and the area of the exposed pattern, so that it is difficult to prepare a micro-nano structure with a large area and uniformity.
In general, how to prepare micro-nano structures with small size, high density and large area on a substrate with poor conductivity and even insulation has become an important problem to be solved in the development of nano electronic devices. The related solutions reported at present are a pattern correction method and an exposure dose correction method, however, the actual operations of the methods are complex, and the problems of write field splicing dislocation and the like exist in the electron beam exposure process. In addition, there is a method of reducing electron beam proximity effect by spin coating a charge removing gel on a sample, but the resolution of the charge removing gel currently on the market is not too high (> 30 nm), and is not complementary to the preparation of a nanostructure with a width of only tens of nm.
Disclosure of Invention
The invention aims to: in order to solve the problem that the electron beam exposure produces serious electron beam proximity effect on the insulating substrate, the invention provides a method for preparing a high-precision and large-area nano structure on the insulating substrate, one or more conductive layers are introduced between a spin-coated electron beam adhesive layer and a film layer to be prepared into a micro-nano structure, the release rate of high-energy electrons in the electron beam exposure process is increased, and a local electric field is reduced, so that a great amount of charges are effectively prevented from accumulating on the surface of the insulating substrate, and a certain technical foundation is laid for further preparing a nano electronic device with a small size, high density and large area micro-nano structure.
The technical scheme is as follows: a method of fabricating high precision, large area nanostructures on an insulating substrate, comprising the steps of:
Step 1: growing a film for preparing a micro-nano structure on the surface of a substrate with poor conductivity and even insulation;
Step 2: growing one or more conductive layers on the surface of the film;
step 3: spin-coating electron beam photoresist on the upper surface of the conductive layer, and drying the electron beam photoresist to obtain a sample;
wherein, the material used for the conductive layer has the following physical characteristics:
the material used for the conductive layer is conductive at the temperature of more than 280K and insulated at the temperature of less than 10K;
the conductive layer is made of materials which have no absorption or less than 10% of visible light or infrared light;
the material used for the conductive layer is easy to grow in a large area and has uniform structure;
The conductive layer will not be denatured during the subsequent processes and will not affect the physical and chemical properties of the film. Further, the substrate includes, but is not limited to, one of a MgO substrate, a MgF 2 substrate, and an Al 2O3 substrate.
Further, the film includes, but is not limited to, one of an NbN film, an Nb film, and an NbTiN film.
Further, the conductive layer may be made of materials including, but not limited to, amorphous Si or Nb 5N6.
Further, the electron beam photoresist includes, but is not limited to, one of HSQ, PMMA, ZEP520,520 and AR-P6200.
The invention also discloses a preparation method of the micro-nano structural material, which comprises the following steps:
the sample is prepared by adopting the method for preparing the high-precision large-area nano structure on the insulating substrate;
The micro-nano structure pattern is exposed on the electron beam photoresist of the sample by leading in a micro-nano structure design pattern file to an electron beam exposure system and setting exposure parameters, and an exposure sample is obtained after the exposure is completed;
developing and post-baking the exposure sample to obtain a superconductive nanowire pattern;
and transferring the superconducting nanowire pattern on the electron beam photoresist to the film by adopting etching gas to obtain the micro-nano structural material.
Further, the micro-nano structure design file comprises a pattern of superconducting nanowires, a duty ratio of the pattern of the superconducting nanowires, a total area of the superconducting nanowires, line widths of the superconducting nanowires and intervals among the superconducting nanowires.
Further, the etching gas includes, but is not limited to, one or more gas combinations in CF 4、SF6、CHF3、Ar、O2.
The invention also discloses a preparation method of the nano photoelectronic device, and the nano photoelectronic device is prepared on the basis of the micro-nano structural material prepared by adopting the preparation method of the micro-nano structural material.
The beneficial effects are that: compared with the prior art, the invention has the following advantages:
(1) The invention grows a film for preparing a micro-nano structure on a weak conductive or insulating substrate, and spin-coats electron beam photoresist after introducing a conductive layer structure on the surface of the film so as to achieve the purpose of reducing electron beam proximity effect generated in the electron beam exposure process;
(2) By adopting the method provided by the invention, the micro-nano structure with large area and good uniformity can be prepared on the insulating substrate with poor conductivity; for low-temperature devices, particularly for SNSPD preparation, the SNSPD can simultaneously realize a large photosurface, a wide spectral response and the aim of improving the working temperature (such as growing an NbN superconducting film on an MgO insulating substrate to prepare the SNSPD with the large photosurface and high working temperature (> 4.2K);
(3) The particle size of the introduced conductive layer material can be controlled to be in the order of a few nanometers or even sub-nanometers, so that the resolution of an exposure pattern is not reduced;
(4) The invention has simple process and strong operability, and can be widely applied to the technical field of large-scale integrated nano optoelectronic devices.
Drawings
FIG. 1 is a schematic cross-sectional view of a MgO insulating substrate after cleaning;
FIG. 2 is a schematic diagram of an NbN superconducting thin film grown on the upper surface of an MgO insulating substrate;
FIG. 3 is a schematic diagram of the Nb 5N6 conductive layer grown on the basis of FIG. 2;
FIG. 4 is a schematic illustration of spin-coating a layer of HSQ electron beam glue on the basis of FIG. 3;
FIG. 5 is a top view of a superconducting nanowire of a designed serpentine structure;
FIG. 6 is a schematic diagram showing the results of the HSQ electron beam resist after exposure development based on FIG. 4;
FIG. 7 is a schematic diagram showing the results of reactive ion etching of the Nb 5N6 conductive layer and NbN superconducting film in accordance with FIG. 6;
FIG. 8 is a scanning electron micrograph of large area nanowires obtained by electron beam exposure without introducing a conductive layer;
Fig. 9 is a scanning electron micrograph of a large area nanowire obtained by electron beam exposure after introduction of the Nb 5N6 conductive layer.
Detailed Description
The technical scheme of the invention is further described with reference to the accompanying drawings and the embodiments.
The invention relates to a method for preparing a high-precision large-area nano structure on an insulating substrate, which comprises the following steps:
Step 1: growing a film for preparing a micro-nano structure on the surface of a substrate with high cleanliness, poor conductivity and even insulation, and carrying out ultrasonic cleaning on the substrate on which the film is grown; such poorly conductive and even insulating substrates include, but are not limited to, mgO, mgF 2, and Al 2O3; if an insulating substrate is selected, the surface roughness RMS of the selected insulating substrate is less than 1nm. Films grown on the substrate surface for fabrication into micro-nano structures include, but are not limited to, nbN, nb, and NbTiN; the film is grown by direct current magnetron sputtering, co-sputtering, atomic layer stacking and chemical vapor deposition, and the thickness of the grown film is 1nm-10nm, and the surface roughness RMS is <1nm.
Step 2: growing one or more conductive layers on the upper surface of the film; the conductive layer can be grown by, but not limited to, direct current magnetron sputtering, co-sputtering, atomic layer deposition and chemical vapor deposition.
The following description is made on several physical properties of the introduced conductive layer material, which is beneficial to quickly finding and screening out the conductive layer material meeting the requirements in practical application. In order not to affect the performance of the optoelectronic device, the conductive layer structure should have four main physical properties at the same time: first, the conductive layer is conductive at normal temperature (> 280K) and insulating at low temperature (< 10K); second, the conductive layer has no absorption or less than 10% of visible or infrared light; thirdly, the conductive layer is easy to grow in a large area and has uniform structure; fourth, the conductive layer will not be denatured during the subsequent processes and will not affect the physical and chemical properties of the film. The materials used for the conductive layer may include, but are not limited to, amorphous Si and Nb 5N6. The thickness of the conductive layer is 5nm-1000nm, and the surface roughness RMS is <5nm.
Step 3: ultrasonic cleaning is carried out again, electron beam photoresist is coated on the upper surface of the conductive layer in a spin mode, the electron beam photoresist is dried, and a sample is sent into an electron beam exposure system for exposure; the spin-on electron beam resist should have good etch resistance, and the electron beam resist thickness is set to 20nm-2000nm, and the type selection may include, but is not limited to HSQ, PMMA, ZEP a 520 and AR-P6200.
Step 4: the micro-nano structure design drawing file is imported into an electron beam exposure system, exposure parameters are set, and exposure of micro-nano structure drawings on an electron beam photoresist is started; the micro-nano structure pattern has a duty cycle (pattern real area/photosurface) of 0.1-1, and the structure shape comprises, but is not limited to, a serpentine structure, a broken line structure, a fractal structure or a spiral structure. In the process of setting exposure parameters, the exposure beam current can be 0.1-10nA, and the exposure dose is set according to specific situations.
Step 5: and taking out an exposure sample after exposure, developing and post-baking. And transferring the micro-nano structure pattern on the electron beam photoresist to the film by adopting a reactive ion etching system, thereby obtaining the micro-nano structure with large area and good uniformity. The reactive ion etching system mainly etches objects including a conductive layer and a thin film. The etching gas is selected differently for different conductive layer materials and film materials, and etching gases that may be used include, but are not limited to, CF 4、SF6、CHF3、Ar、O2 and combinations of the above.
Example 1
Based on the above method, this embodiment takes the preparation of SNSPD with large photosurface on an insulating substrate as an example, and provides detailed experimental operation flow including
Step 1: cleaning an MgO insulating substrate 1 with the thickness of 500 mu m by adopting acetone, ethanol and deionized water, drying the MgO insulating substrate 1 by a nitrogen gun after cleaning so as to remove water vapor on the surface of the substrate, and measuring the surface roughness RMS <0.5nm of the MgO insulating substrate 1 by adopting AFM; see fig. 1.
Step 2: and (3) growing a NbN superconducting film 2 with the thickness of 5nm for preparing a micro-nano structure on the surface of the MgO insulating substrate 1 with high cleanliness by adopting a direct current magnetron sputtering instrument, wherein the surface roughness RMS of the grown NbN superconducting film 2 is less than 0.5nm, obtaining a sample shown in figure 2, and carrying out ultrasonic cleaning on the sample.
Since the NbN superconducting thin film 2 is lattice matched with the MgO insulating substrate 1, and the maximum obtainable superconducting critical transition temperature of the NbN superconducting thin film 2 grown on the MgO insulating substrate 1 is 16.5K, this is of great benefit to develop SNSPD which can operate above the liquid helium temperature (4.2K).
Step 3: and a layer of 120 nm-thick Nb 5N6 material is grown on the surface of the NbN superconducting film 2 by adopting radio frequency magnetron sputtering as a conductive layer, as shown in figure 3. And cleaning the MgO insulating substrate 1 on which the NbN superconducting film 2 and the Nb 5N6 conducting layer 3 are grown by adopting acetone, ethanol and deionized water respectively, and drying by using a nitrogen gun after cleaning so as to remove water vapor on the surface.
Step 4: HSQ electron beam photoresist with good etching resistance is selected, and the solute concentration percentage of the HSQ is 6%. Spin-coating electron beam photoresist 4 on the surface of the Nb 5N6 conductive layer 3, obtaining HSQ electron beam photoresist layer with the thickness of 200nm after spin-coating, and then placing the MgO insulating substrate 1 on a baking table with the temperature of 90 ℃ for baking for 4 minutes, thereby achieving the purpose of curing HSQ, as shown in figure 4.
Step 5: the structure of the superconducting nanowire is designed to be a serpentine structure, the total area of the nanowire is 80×80 μm 2, the design line width of the nanowire is 100nm, and the pitch is 200nm, as shown in fig. 5. The design file was introduced into an electron beam exposure system, the electron beam exposure high voltage was set to 100kV, the exposure beam current was 0.2nA, and writing of the superconducting nanowire pattern on the electron beam resist 4 was started.
Step 6: after the electron beam exposure was completed, the MgO insulating substrate 1 was taken out, developed with an HSQ-dedicated developing solution (TMAH developing solution having a concentration percentage of a solute of 25%) at an ambient temperature of 23 ℃ for 30s, and baked on a baking table having a temperature of 90 ℃ for 2 minutes to obtain a pattern of superconducting nanowires, as shown in fig. 6.
Step 7: and etching the Nb 5N6 conductive layer 3 and the NbN superconducting film 2 by adopting a reactive ion etching system, and transferring the superconducting nanowire pattern to the NbN superconducting film 2. A mixed gas of SF 6 and CHF 3 may be selected as the etching gas. And taking out the substrate after etching is finished, and obtaining the superconductive nanowire 5 with large area and good uniformity, wherein the schematic diagram of the cross-section structure of the superconductive nanowire is shown in figure 7.
To fully illustrate the excellent effects of this example, fig. 8 shows the electron beam exposure effect when only the conductive layer was not introduced, in the case of completely conforming to the other operation steps and operation conditions of example 1, in relation to a scanning electron microscope photograph. As can be seen from fig. 8, when the conductive layer is not introduced, the electron beam proximity effect caused by the electron beam exposure is remarkable, and the nanowires having a large area and uniform structure cannot be exposed. In example 1, the electron beam exposure effect after introducing the Nb 5N6 conductive layer is shown in fig. 9, and it can be seen that the widths of the nanowires at the edge and middle regions of the large-area nanowire pattern obtained by the electron beam exposure after introducing the conductive layer are almost the same, and the uniformity is good, which indicates that the electron beam proximity effect is greatly reduced at this time.
Claims (7)
1. A preparation method of a micro-nano structure material is characterized by comprising the following steps: comprising the following steps:
A sample is prepared by adopting a method for preparing a high-precision large-area nano structure on an insulating substrate;
The micro-nano structure pattern is exposed on the electron beam photoresist of the sample by leading in a micro-nano structure design pattern file to an electron beam exposure system and setting exposure parameters, and an exposure sample is obtained after the exposure is completed;
developing and post-baking the exposure sample to obtain a superconductive nanowire pattern;
Transferring the superconducting nanowire pattern on the electron beam photoresist to a film by adopting etching gas to obtain a micro-nano structure material;
The method for preparing the high-precision large-area nano structure on the insulating substrate comprises the following steps of:
Step 1: growing a film for preparing a micro-nano structure on the surface of a substrate with poor conductivity and even insulation;
Step 2: growing one or more conductive layers on the surface of the film;
step 3: spin-coating electron beam photoresist on the upper surface of the conductive layer, and drying the electron beam photoresist to obtain a sample;
wherein, the material used for the conductive layer has the following physical characteristics:
the material used for the conductive layer is conductive at the temperature of more than 280K and insulated at the temperature of less than 10K;
the conductive layer is made of materials which have no absorption or less than 10% of visible light or infrared light;
wherein the film comprises one of an NbN film, an Nb film and an NbTiN film.
2. The method for preparing the micro-nano structural material according to claim 1, wherein the method comprises the following steps: the substrate includes one of a MgO substrate, a MgF 2 substrate, and an Al 2O3 substrate.
3. The method for preparing the micro-nano structural material according to claim 1, wherein the method comprises the following steps: the material used for the conductive layer comprises amorphous Si or Nb 5N6.
4. The method for preparing the micro-nano structural material according to claim 1, wherein the method comprises the following steps: the electron beam photoresist includes one of HSQ, PMMA, ZEP and AR-P6200.
5. The method for preparing the micro-nano structural material according to claim 1, wherein the method comprises the following steps: the micro-nano structure design file comprises a pattern of superconducting nanowires, a duty ratio of the pattern of the superconducting nanowires, a total area of the superconducting nanowires, line widths of the superconducting nanowires and intervals among the superconducting nanowires.
6. The method for preparing the micro-nano structural material according to claim 1, wherein the method comprises the following steps: the etching gas includes one or more gas combinations in CF 4、SF6、CHF3、Ar、O2.
7. A preparation method of a nano optoelectronic device is characterized in that: the nano optoelectronic device is prepared on the basis of the micro-nano structural material prepared by the micro-nano structural material preparation method of claim 1.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102976264A (en) * | 2012-12-13 | 2013-03-20 | 中国科学院物理研究所 | Method for preparing self-supporting multilayer micro nano structure |
| CN103579405A (en) * | 2012-09-10 | 2014-02-12 | 清华大学 | High-speed SNSPD with high-absorption structure and preparation method of high-speed SNSPD |
| CN110850688A (en) * | 2019-11-28 | 2020-02-28 | 清华大学 | Method for manufacturing optical micro-nano graph on surface of lithium niobate thin film |
| CN112798116A (en) * | 2021-01-13 | 2021-05-14 | 南京大学 | Intermediate infrared superconducting nanowire single photon detector |
| CN112885951A (en) * | 2021-01-27 | 2021-06-01 | 电子科技大学 | Porous superconducting niobium nitride nanowire and preparation method thereof |
| CN113346004A (en) * | 2021-06-04 | 2021-09-03 | 南京大学 | SNSPD with high heat recovery rate and six-nitrogen five-niobium buffer layer |
-
2021
- 2021-11-17 CN CN202111359465.2A patent/CN114335213B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579405A (en) * | 2012-09-10 | 2014-02-12 | 清华大学 | High-speed SNSPD with high-absorption structure and preparation method of high-speed SNSPD |
| CN102976264A (en) * | 2012-12-13 | 2013-03-20 | 中国科学院物理研究所 | Method for preparing self-supporting multilayer micro nano structure |
| CN110850688A (en) * | 2019-11-28 | 2020-02-28 | 清华大学 | Method for manufacturing optical micro-nano graph on surface of lithium niobate thin film |
| CN112798116A (en) * | 2021-01-13 | 2021-05-14 | 南京大学 | Intermediate infrared superconducting nanowire single photon detector |
| CN112885951A (en) * | 2021-01-27 | 2021-06-01 | 电子科技大学 | Porous superconducting niobium nitride nanowire and preparation method thereof |
| CN113346004A (en) * | 2021-06-04 | 2021-09-03 | 南京大学 | SNSPD with high heat recovery rate and six-nitrogen five-niobium buffer layer |
Non-Patent Citations (3)
| Title |
|---|
| Comparison of Superconducting Nanowire Single-Photon Detectors Made of NbTiN and NbN Thin Films.《IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY》.2018,全文. * |
| Sixteen-Pixel NbN Nanowire Single Photon Detector Coupled With 300-μm Fiber.《 IEEE PHOTONICS JOURNAL》.2020,全文. * |
| 超导纳米线单光子探测器高效高速特性研究.《中国博士学位论文全文数据库 基础科学辑》.2021,全文. * |
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