CN114563838B - A high-efficient absorption structure of intermediate infrared band for single photon detects - Google Patents

A high-efficient absorption structure of intermediate infrared band for single photon detects Download PDF

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CN114563838B
CN114563838B CN202210251952.5A CN202210251952A CN114563838B CN 114563838 B CN114563838 B CN 114563838B CN 202210251952 A CN202210251952 A CN 202210251952A CN 114563838 B CN114563838 B CN 114563838B
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贾小氢
秦志
范克彬
鲍涵
徐韬
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Nanjing University
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Abstract

The invention discloses a mid-infrared frequency band efficient absorption structure for single photon detection, and the structure is combined with a tungsten-silicon superconducting nanowire single photon detector to improve the detection efficiency of the detector. The efficient absorption structure is a super-surface structure formed by periodically arranging the golden cross antenna units, and the WSi nanowires are combined with the efficient absorption structure, so that the absorption rate of the WSi SNSPD in the middle infrared band is obviously improved. In addition, the invention can also be extended to SNSPDs made of other thin film materials.

Description

A high-efficient absorption structure of intermediate infrared band for single photon detects
Technical Field
The invention relates to a single photon detector, in particular to a middle infrared band efficient absorption structure for single photon detection.
Background
The Superconducting Nanowire Single Photon Detector (SNSPD) has the characteristics of high detection rate, high detection efficiency, low dark count and the like, and has great application value in the fields of quantum key distribution, deep space communication, dark substance detection and the like. At present, SNSPD realizes high-efficiency single photon detection only in a wave band smaller than 2 mu m, and the performance is expanded to a middle infrared wave band, so that the SNSPD is expected to be applied to astronomy, laser radar, dark matter search, infrared spectroscopy and other aspects. The SNSPD device is required to have high light absorptivity to realize efficient detection of the intermediate infrared band, and the intrinsic light absorptivity of the WSi thin film in the intermediate infrared band is low, so that a coupling structure needs to be designed to improve the light absorptivity. Common methods for improving the optical absorption rate of SNSPD include optical resonant cavities, antenna structures and the like. For 1550nm band, optical resonant cavity is usually used to increase the light absorption rate, while for mid-infrared band, optical resonant cavity is no longer suitable, and the conventional antenna structure has the disadvantage of great loss. Therefore, it is necessary to redesign a super-surface structure formed by periodically arranged antenna arrays, so as to reduce the loss of antenna parts while improving the light absorption efficiency of the single photon detector.
Disclosure of Invention
The invention aims to provide a middle infrared band efficient absorption structure for single photon detection, which solves the problem that a WSi film is low in light absorption rate in a middle infrared band.
The technical solution for realizing the purpose of the invention is as follows: a mid-infrared band efficient absorption structure for single photon detection is a super-surface structure coupled on a WSi SNSPD, and the super-surface is formed by periodically arranging gold cross antenna units.
Further, the wavelength corresponding to the light absorption peak is related to the length of the gold cross, and the size of the light absorption peak is related to the width of the gold cross structure and the size of the gold cross antenna unit.
Further, the Jin Shizi antenna unit has a size of 2 μm × 2 μm, wherein the gold cross has a length of 1.55 μm and a width of 0.3 μm.
Furthermore, the WSi SNSPD coupled with the super-surface structure comprises a Ti layer, an Au layer and SiO layer from bottom to top respectively 2 Layer, WSi layer, siO 2 Layer, ti layer, au layer, corresponding thickness of 10nm, 100nm, 120nm, 5nm, 40nm, 10nm, 80nm.
A preparation method of WSi SNSPD with a super-surface structure comprises the following steps:
step 1, growing a Ti/Au double layer on a substrate by magnetron sputtering, and then growing SiO on the Ti/Au layer by PECVD 2 A layer;
step 2, in SiO 2 Growing a WSi film on the layer by magnetron co-sputtering;
step 3, drawing a nanowire graph on the WSi film in an electron beam exposure mode and etching the WSi nanowire in a reactive ion etching mode;
step 4, growing SiO on the WSi nanowire by PECVD 2 A layer;
step 5, in SiO 2 And drawing patterns on the layers in an electron beam exposure mode, growing a Ti/Au double layer through magnetron sputtering, and stripping the periodic structure of the gold cross antenna unit by using a Lift-off process.
Further, in step 1, magnetron sputtering is used for growing a Ti/Au double layer, and then PECVD is used for growing SiO on the Ti/Au 2 A layer, wherein: the method for growing the Ti/Au double layer by magnetron sputtering adopts a direct current magnetron sputtering mode, wherein the industrial gas is argon gas of 100sccm, the sputtering pressure is 4mTorr, the constant current mode is selected for the Ti layer, the sputtering current is 0.4A, the growth thickness is 10nm, the constant power mode is selected for the Au layer, the sputtering power is 80W, and the growth thickness is 100nm; the process gas for growing the SiO2 layer by PECVD is SiH4/N 2 :100sccm,N 2 O of 450sccm, the gas pressure of 300mTorr, the power of 10W, the growth temperature of 350 ℃ and the growth thickness of 120nm.
Further, in step 2, in SiO 2 Growing a WSi film on the layer by magnetron co-sputtering, wherein: the magnetron co-sputtering process gas is 23.1sccm of argon, the sputtering pressure is 1.0pa, the sputtering power of the W target is 40W, the sputtering power of the Si target is 100W, and the growth thickness of WSi is 5nm.
Further, in step 3, a nanowire pattern is drawn on the WSi film in an electron beam exposure mode and the WSi nanowire is etched in a reactive ion etching mode, wherein: the photoresist used for electron beam exposure is PMMA, the beam current is 0.2nA, and the acceleration voltage is 100kV; the line width of the nanowire pattern is 100nm, the distance is 140nm, and the area of a detection region is 16 micrometers multiplied by 16 micrometers; the process gas of the reactive ion etching is CF4, the gas pressure is 1.2Pa, and the etching time is 60s.
Further, in step 4, siO was grown on WSi nanowires using PECVD 2 A layer, wherein: the process gas of PECVD is SiH4/N 2 :100sccm,N 2 O of 450sccm, a gas pressure of 300mTorr, a power of 10W 2 The growth temperature is 350 ℃, and the growth thickness is 40nm.
Further, in step 5, in SiO 2 Drawing patterns on the layer by using an electron beam exposure mode, growing a Ti/Au double layer by magnetron sputtering, and stripping a periodic structure of the gold cross antenna unit by using a Lift-off process, wherein: the photoresist used for electron beam exposure is PMMA, the beam current is 0.2nA, and the acceleration voltage is 100kV; jin Shizi antenna unit with size of 2 μm × 2 μm, length of gold cross of 1.55 μm, and width of 0.3 μm; the magnetron sputtering Ti/Au double layer adopts a direct current magnetron sputtering mode; the Lift-off process adopts N-methyl solution to strip in water bath at 80 ℃ for 30 min.
Compared with the prior art, the invention has the remarkable advantages that: by adopting the super-surface structure, the light absorption rate of the WSi SNSPD in a middle infrared (5 mu m) wave band can be effectively improved. According to the measurement result, the absorption peak value of the WSi SNSPD coupled with the super-surface structure reaches 98.3% at the position of 5.13 mu m, compared with the WSi SNSPD without the super-surface structure, the absorption rate is improved by more than 9 times, the defects of low absorption rate of the WSi in the middle infrared band and high loss of the antenna structure are overcome, and the method is expected to be used for preparing the middle infrared SNSPD with high detection efficiency in the follow-up process.
Drawings
FIG. 1 is a schematic representation of a unit of a super-surface structure;
FIG. 2 is a flow chart of the preparation of a super-surface structure;
FIG. 3 shows Au-SiO on Si substrate 2 A surface AFM map;
FIG. 4 is an SEM image of a super-surface structure;
FIG. 5 shows a structure of Au-SiO 2 An infrared absorption spectrum of the WSi film on the substrate;
FIG. 6 is a graph of the infrared absorption spectrum of a super-surface structure integrated on a WSi thin film.
Detailed Description
The present invention is further illustrated by the following figures and specific examples, which are to be understood as illustrative only and not as limiting the scope of the invention for use, and modifications of various equivalent forms of the invention which are obvious to those skilled in the art, after reading the present disclosure, are intended to be included within the scope of the appended claims.
Principle of the technology
Surface plasmon effect: when photons are incident on the metal surface, the local electric field on the metal surface is enhanced, a near-field electromagnetic wave propagating along the metal surface is generated, and absorption can be enhanced when the electromagnetic wave resonates with the incident light wave. Due to the existence of the plasmon effect, the light absorption efficiency of the detector can be improved by utilizing the metal antenna structure. However, due to the skin effect, the current is mainly distributed on the surface of the metal antenna, the loss of the antenna part is high, and the phenomenon is more obvious in the middle infrared band. Therefore, the invention adopts the metal antenna array which is arranged periodically, and electromagnetic waves can resonate at the gap between the antenna and the antenna, thereby enhancing the absorption and reducing the loss of the antenna part.
Discussion of Experimental and test results
As shown in figure 1, the invention designs a mid-infrared band efficient absorption structure for single photon detection, which is a super-surface structure coupled on a WSi SNSPD, wherein the super-surface is composed of a periodic gold cross antenna array, the light absorption rate of the mid-infrared band can be greatly improved due to the surface plasmon effect, and the loss of an antenna part can be reduced by the periodic array structure.
The invention adjusts the wavelength corresponding to the light absorptivity peak value by adjusting the length of the gold cross structure, and adjusts the size of the light absorptivity peak value by adjusting the width of the gold cross structure and the size of the periodic unit. After the extinction coefficients (n and k) of the WSi film are obtained by measuring the infrared absorption spectrum of the WSi film, simulation is carried out by utilizing CST software according to the extinction coefficients obtained by measurement, the size of the gold cross antenna unit array structure is adjusted, and the simulation result shows that: 5363 the array of Jin Shizi cells has a length of 1.55 μm and a width of 0.3 μm, and a 2 μm cell size with a peak of 100% light absorption at a wavelength of 5 μm. Wherein the thickness of each layer from bottom to top is respectively 1 Ti layer thickness0nm, 100nm of Au layer thickness, siO 2 Layer thickness 120nm, WSi layer thickness 5nm, siO 2 The layer thickness was 40nm, the Ti layer thickness was 10nm, and the Au layer thickness was 80nm.
Based on the design, the preparation method of the WSi SNSPD with the super-surface structure comprises the following steps:
step 1, firstly putting a polished Si substrate into an acetone solution for ultrasonic cleaning for 10 minutes, then putting the Si substrate into an alcohol solution for ultrasonic cleaning for 10 minutes, finally performing ultrasonic cleaning for 10 minutes by deionized water, blow-drying the Si substrate by nitrogen, checking the cleanliness of the surface of the Si substrate under a microscope, and observing that the surface is smooth and has no obvious dust and impurity for later use.
Step 2, adhering the cleaned Si substrate to a tray, and sending the tray to a magnetron sputtering device for growing a Ti/Au double layer, wherein parameters of magnetron sputtering are shown in Table 1:
TABLE 1 DC MAGNETO-CONTROLLED SPUTTERING METHOD FOR GROWING Ti/Au THIN FILM
Figure GDA0003874439080000041
Step 3, after growing the Ti/Au double layer, putting the sample into PECVD equipment for SiO 2 The PECVD parameters are shown in the following table;
TABLE 2 PECVD growth of SiO 2 Film Condition
Figure GDA0003874439080000042
Step 4, growing SiO 2 After layering, putting the sample into an alcohol solution, ultrasonically cleaning for 5 minutes, drying by using nitrogen, putting the sample into a magnetron co-sputtering instrument for growth of a WSi film, wherein parameters of magnetron sputtering are shown as the following table:
TABLE 3 conditions for magnetron co-sputtering growth of WSi films
Flow of gas Sputtering gas pressure W target power Power of Si target Rotational speed Time of sputtering
Ar23.1sccm 1.0pa 40W 100W 100rpm 37s
And 5, spin-coating an electron beam resist of PMMA (polymethyl methacrylate) on the surface of the sample grown in the step 4, wherein the thickness of the glue is 200nm, then performing electron beam lithography on the electron beam resist by using an EBPG5200 electron beam exposure system, drawing a line pattern with the line width of 100nm, the interval of 140nm and the area of 16 Mum multiplied by 16 Mum on the electron beam resist, and then etching the sample subjected to electron beam exposure in a reactive ion etching manner under the following conditions shown in the table, so that the nanowire pattern drawn by electron beam exposure is transferred to the WSi thin film to form the WSi nanowire.
TABLE 4 reactive ion etching conditions
Figure GDA0003874439080000051
Step 6, then sending the sample into a PECVD deviceIn preparation of SiO 2 Layer growth, PECVD parameters are shown in the table below, followed by spin coating of an e-beam resist of PMMA (polymethyl methacrylate) to a glue thickness of 200nm on the sample surface, followed by e-beam lithography of the e-beam resist using the EBPG5200 e-beam exposure system. And (3) after the electron beam exposure is finished, growing a Ti/Au film on the sample by adopting magnetron sputtering under the same growth condition as the step 2, and finally stripping the pattern by adopting an N-methyl solution hot water bath at 80 ℃ for 30 minutes.
TABLE 5 PECVD growth of SiO 2 Film Condition
Figure GDA0003874439080000052
The invention selects Si with double-sided polishing as a substrate material, and WSi SNSPD with a super-surface structure is prepared on the substrate material, as shown in figure 1, and the preparation flow is shown in figure 2. The flatness requirement of the substrate is higher in the actual device preparation process, and compared with a plurality of different preparation modes, the flatness of the substrate is measured by using AFM (atomic force microscope), and finally, a Ti/Au layer is grown by magnetron sputtering and SiO is grown by PECVD (plasma enhanced chemical vapor deposition) 2 The RMS value of (a) is less than 1 (as shown in fig. 3), indicating that the substrate prepared in this way is relatively flat and meets the requirements of device fabrication.
Fig. 4 shows that the prepared super-surface basically conforms to the design in structural size, and as can be seen from the infrared absorption spectra of the WSi SNSPD without or without the super-surface structure in fig. 5 and 6, the device with the super-surface structure has obvious absorption enhancement in the mid-infrared (5 μm) band, the absorption peak can reach more than 98% at 5.18 μm, and the absorption rate of the device without the super-surface structure is less than 10%, which indicates that the structure can effectively improve the light absorption rate of the WSi SNSPD in the mid-infrared, and the development of the mid-infrared SNSPD with high detection efficiency is facilitated.

Claims (10)

1. The intermediate infrared band efficient absorption structure for single photon detection is characterized by being a super-surface structure coupled on a WSi SNSPD, wherein the super-surface is formed by periodically arranging gold cross antenna units.
2. The mid-infrared band high-efficiency absorption structure for single photon detection according to claim 1, wherein the wavelength corresponding to the peak value of the light absorption rate is related to the length of the gold cross, and the size of the peak value of the light absorption rate is related to the width of the gold cross and the size of the gold cross antenna unit.
3. The mid-infrared band high-efficiency absorption structure for single photon detection of claim 1, wherein the Jin Shizi antenna unit has the size of 2 μm x 2 μm, and the gold cross has the length of 1.55 μm and the width of 0.3 μm.
4. The mid-infrared band high-efficiency absorption structure for single photon detection according to claim 1, wherein the WSi SNSPD coupled with the super-surface structure comprises a Ti layer, an Au layer and a SiO layer from bottom to top respectively 2 Layer, WSi layer, siO 2 Layer, ti layer, au layer, corresponding thickness of 10nm, 100nm, 120nm, 5nm, 40nm, 10nm, 80nm.
5. The preparation method of the WSi SNSPD with the super-surface structure is characterized by comprising the following steps:
step 1, growing a Ti/Au double layer on a substrate by magnetron sputtering, and then growing a SiO2 layer on the Ti/Au layer by PECVD;
step 2, in SiO 2 Growing a WSi film on the layer by magnetron co-sputtering;
step 3, drawing a nanowire graph on the WSi film in an electron beam exposure mode and etching the WSi nanowire in a reactive ion etching mode;
step 4, growing SiO on the WSi nanowire by PECVD 2 A layer;
step 5, in SiO 2 And drawing patterns on the layers in an electron beam exposure mode, growing a Ti/Au double layer through magnetron sputtering, and stripping the periodic structure of the gold cross antenna unit by using a Lift-off process.
6. The method for preparing WSi SNSPD with a super-surface structure according to claim 5, wherein in step 1, magnetron sputtering is used to grow a Ti/Au bilayer, and then PECVD is used to grow SiO on the Ti/Au bilayer 2 A layer, wherein: the method for growing the Ti/Au double layer by magnetron sputtering adopts a direct current magnetron sputtering mode, the industrial gas is argon gas 100sccm, the sputtering pressure is 4mTorr, the constant current mode is selected for the Ti layer, the sputtering current is 0.4A, the growth thickness is 10nm, the constant power mode is selected for the Au layer, the sputtering power is 80W, and the growth thickness is 100nm; PECVD (plasma enhanced chemical vapor deposition) growth of SiO 2 The process gas of the layer is SiH4/N 2 :100sccm,N 2 O of 450sccm, the gas pressure of 300mTorr, the power of 10W, the growth temperature of 350 ℃ and the growth thickness of 120nm.
7. The method for preparing WSi SNSPD with super-surface structure according to claim 5, wherein in step 2, in SiO 2 Growing a WSi film on the layer by magnetron co-sputtering, wherein: the magnetron co-sputtering process gas is 23.1sccm of argon, the sputtering pressure is 1.0pa, the sputtering power of the W target is 40W, the sputtering power of the Si target is 100W, and the growth thickness of WSi is 5nm.
8. The method for preparing a WSi SNSPD with a super-surface structure according to claim 5, wherein in step 3, a nanowire pattern is drawn on the WSi film by using an electron beam exposure mode and the WSi nanowire is etched by using a reactive ion etching mode, wherein: the photoresist used for electron beam exposure is PMMA, the beam current is 0.2nA, and the acceleration voltage is 100kV; the line width of the nanowire pattern is 100nm, the distance is 140nm, and the area of a detection region is 16 micrometers multiplied by 16 micrometers; the process gas of the reactive ion etching is CF4, the gas pressure is 1.2Pa, and the etching time is 60s.
9. The method for preparing WSi SNSPD with a super-surface structure according to claim 5, wherein in step 4, siO is grown on WSi nanowires by PECVD 2 A layer, wherein: the process gas of PECVD is SiH4/N 2 :100sccm,N 2 O of 450sccm and the air pressure of 300mTorr, power of 10W 2 The growth temperature is 350 ℃, and the growth thickness is 40nm.
10. The method for preparing WSi SNSPD with super-surface structure according to claim 5, wherein in step 5, in SiO 2 Drawing patterns on the layers in an electron beam exposure mode, growing a Ti/Au double layer through magnetron sputtering, and stripping a periodic structure of the gold cross antenna unit by using a Lift-off process, wherein: the photoresist used for electron beam exposure is PMMA, the beam current is 0.2nA, and the acceleration voltage is 100kV; jin Shizi antenna element size is 2 μm × 2 μm, gold cross length is 1.55 μm, width is 0.3 μm; the magnetron sputtering Ti/Au double layer adopts a direct current magnetron sputtering mode; the Lift-off process adopts N-methyl solution to strip in water bath at 80 ℃ for 30 min.
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