CN115966626A - Design and construction process of two-dimensional photoelectric detector array with sandwich structure - Google Patents
Design and construction process of two-dimensional photoelectric detector array with sandwich structure Download PDFInfo
- Publication number
- CN115966626A CN115966626A CN202211149206.1A CN202211149206A CN115966626A CN 115966626 A CN115966626 A CN 115966626A CN 202211149206 A CN202211149206 A CN 202211149206A CN 115966626 A CN115966626 A CN 115966626A
- Authority
- CN
- China
- Prior art keywords
- mos
- electrode
- graphene
- sandwich structure
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a design and construction process of a two-dimensional photoelectric detector array with an asymmetric sandwich structure, and belongs to the field of microelectronic processes and application of photoelectric detectors. The invention relates to large-area molybdenum disulfide (MoS) prepared by Chemical Vapor Deposition (CVD) with gold (Au) as a bottom electrode material 2 ) As the middle layer channel material, large-area Graphene prepared by CVD is used as the top layer electrode material, and Au and MoS are utilized on the basis 2 The etching resistance of Graphene is different, and Au-MoS is realized by adopting the traditional optical exposure and etching process 2 ‑GrapThe size, the position and the number of the hene sandwich structure photoelectric detectors can be controllably constructed.
Description
1. Field of the invention
The invention belongs to the field of microelectronic technology and photoelectric detector application, and particularly relates to a design and construction technology of a two-dimensional photoelectric detector array with a sandwich structure.
2. Background of the invention
Under the background of the high-speed development of modern science and technology, people have higher and higher requirements on information exchange, and the information processing is required to be efficient, convenient, time-saving and labor-saving. Photodetectors, which affect people's lives at all times, are also important components of optoelectronic systems. The core mechanism of the photoelectric detector is to convert optical radiation energy into an electric signal which can be processed by an electronic device, and the photoelectric detector is widely applied and has an extremely important position in both military and civil fields. In recent years, the development of photoelectric information technology has been advanced, and higher demands have been made on the photoelectric detector, and it is desired that the device can realize high integration, miniaturization, high performance, and high stability. The conventional photoelectric detector is based on materials such as silicon, germanium and the like, the preparation process of the materials is quite mature, however, the conventional photoelectric detector is limited by the fact that silicon is an indirect bandgap semiconductor, the quantum efficiency is low, the absorption spectrum is narrow, and at present, the performance of the conventional photoelectric detector is close to the theoretical limit. Therefore, the adoption of the novel two-dimensional semiconductor material for preparing the photoelectric detector has very important significance for solving the dilemma of the current photoelectric field.
Molybdenum disulfide (MoS) 2 ) The material is a novel two-dimensional semiconductor material, and the unique energy band structure of the material has stronger absorption to visible light, near infrared and photons; on the other hand, the van Hoff singularities in the density of electronic structural states show strong substance-light interaction, which means strong photon absorption and thus excitation of electron-hole pairs despite the reduced thickness, and thus MoS 2 Becoming a hot candidate for channel materials of a new generation of photoelectric detection devices. In the existing multiple MoS 2 Of the photodetector structures, the sandwich structure has become one of the hot spots in research because of the MoS 2 When sandwiched between bottom and top electrodes, the electrons and holes generated by light irradiation only need to pass through MoS under the action of electric field 2 The thickness of the layer can quickly reach the electrode, so that the key indexes of the photoelectric detector, such as detection rate response time, are obviously improved. Currently about MoS 2 Metal/MoS reported in sandwich structure photodetectors 2 Metal, metal/MoS 2 Graphene (Graphene), graphene/MoS 2 /Graphene et al, however, regardless of MoS as the channel material 2 Also, graphene, which is an electrode material, mostly adopts a mechanical peeling method, in such a case, the controllability of the size, the position and the quantity of the device cannot be realized, and the device cannot be applied to different electricity in practiceThe need for a way.
Therefore, research into a MoS compatible with the existing microelectronic process and capable of realizing controllable and asymmetric sandwich structure on the size, position and number of devices 2 The construction process of the photoelectric detector array has important significance for promoting the development of two-dimensional materials in the field of photoelectric detector devices.
3. Summary of the invention
The invention aims to: moS with asymmetric sandwich structure 2 The design and construction process of the photoelectric detector array promotes the application of two-dimensional materials in the field of photoelectric detector devices.
The photodetector comprises at least a silicon/silicon dioxide substrate (Si/SiO) 2 ) Gold (Au) and Graphene, channel two-dimensional material MoS 2 Forming a sandwich structure. Silicon dioxide is arranged on the silicon substrate, and Au-MoS is arranged on the silicon dioxide layer 2 -Graphene sandwich structure with metallic Au as bottom electrode, moS 2 And as the middle layer channel material, graphene is used as a top layer electrode, so that an array unit of the photoelectric detector is constructed.
The invention aims to prepare large-area MoS by using Au as a bottom electrode material and adopting a Chemical Vapor Deposition (CVD) method 2 As the middle layer channel material, large-area Graphene prepared by CVD is used as the top electrode material, and Au and MoS are utilized on the basis 2 The etching resistance of Graphene is different, and Au-MoS is realized by adopting the traditional optical and etching process 2 Controllable design and implementation of the size, position and number of photodetectors of the Graphene sandwich structure.
The technical scheme adopted by the invention is as follows:
MoS with asymmetric sandwich structure 2 The design and construction process of the photoelectric detector array comprises the following steps:
(1) Cleaning a silicon wafer: mixing SiO 2 Cutting the Si substrate into a square substrate, and blowing away large-particle silicon slag remained on the surface of the substrate in the cutting process by using dry nitrogen; and putting the substrate into acetone for ultrasonic treatment for 15min, adding absolute ethyl alcohol for 15min, adding deionized water for 15min, and drying by using a nitrogen gun.
(2) Preparing a patterned metal electrode: spin-coating photoresist on the processed silicon wafer, photoetching and developing by adopting an ultraviolet exposure machine, evaporating a titanium electrode by using an electron beam, and stripping to obtain a patterned Au electrode; in which titanium (Ti) is used as the substrate SiO 2 Adhesion to Au; a part of the Au electrode is used as the bottom electrode of the device (and MoS) 2 Direct contact), and one part is led out as a connection of a top-layer Graphene electrode so as to facilitate the test; the size of the electrode can be designed according to needs; a schematic diagram of which is shown in fig. 1.
(3) Transfer of large area MoS 2 : preparation of large-area MoS on sapphire substrate 2 Then, a Polystyrene (PS) solution is spin-coated on the surface of the substrate at 3500rpm for 60s, the substrate is placed on a constant-temperature heating plate, heated at 80-90 ℃ for 15min and baked, and then taken down; after cooling, the sapphire is cut along the edge with tweezers, immersed in deionized water until MoS is attached 2 The PS film is separated from the sapphire and floats on the water surface, and SiO with a patterned metal electrode is used 2 Fishing out the silicon substrate; placing on a constant temperature heating plate, heating at 80 deg.C for 60min, heating at 150 deg.C for 30min, baking, and taking off; cooling, soaking in toluene solution for 10min, removing PS layer, taking out, sequentially washing with acetone and anhydrous ethanol, and blowing with nitrogen; annealing at 300 deg.C under vacuum for 2h to ensure MoS 2 The contact with a gold electrode is good; a schematic diagram of which is shown in fig. 2.
(4) Preparation of patterned MoS 2 Channel: spin-coating photoresist on the substrate prepared in the step (3), ultraviolet exposure lithography, development, and reactive ion etching (SF) 6 ) Obtaining patterned MoS 2 Channel, so that MoS 2 The electrode is positioned right above the bottom Au electrode to form Van der Waals contact; moS 2 The size of the channel can be designed according to the requirement; due to Au and SF 6 Does not react and is therefore in patterning MoS 2 In the process, the Au electrode is not affected; a schematic diagram of which is shown in fig. 3.
(5) Transferring large area Graphene: preparing large-area Graphene on copper foil, spin-coating polymethyl methacrylate (PMMA) solution on the copper foil at the coating speed of 1000rpm, 10s,3000rpm and 30s, and placing the copper foil at constant temperatureHeating on a hot plate at 100 deg.C for 1min, baking, and taking off; after cooling, the copper foil with Graphene side up was placed in FeCl 3 Corroding the copper foil in the HCl corrosive liquid for 3min, washing with deionized water, repeating for 3 times to remove Graphene on the bottom surface of the copper foil, continuously corroding for about 30min after the copper foil is completely corroded; fishing out the glass slide into deionized water for rinsing for 5min, repeating rinsing for 5 times, fishing out the glass slide by using the substrate prepared in the step (4), placing the glass slide on a constant-temperature heating plate, and heating at 50 ℃, 70 ℃,90 ℃ and 110 ℃ for 5min respectively; cooling, soaking in acetone solution for 10min, removing PMMA layer, taking out, sequentially washing with acetone and anhydrous ethanol, and blowing with nitrogen; annealing at 300 deg.C under vacuum for 2h to ensure Graphene and MoS 2 Good contact with Au electrode; a schematic diagram of which is shown in fig. 4.
(6) Preparation of patterned Graphene electrodes: spin-coating photoresist on the substrate prepared in the step (5), ultraviolet exposure lithography, development, and reactive ion etching (O) 2 ) Obtaining a patterned Graphene electrode; one end of the Graphene electrode is arranged in the MoS 2 The right upper side of the first electrode is used as a top electrode, a bottom Au electrode and a channel material MoS of the device 2 The superposed area of the front projection of the top layer Graphene electrode and the front projection of the top layer Graphene electrode is the working area of the device; the other end of the Graphene electrode is led out through Au electrode contact so as to facilitate testing; due to Au and O 2 Do not react and thus in patterning MoS 2 In the process, the Au electrode is not affected; a schematic diagram of which is shown in fig. 5.
Wherein, in the step (1), the oxide layer thickness of the substrate is 285nm, the substrate thickness is 500 μm P-type doped silicon, and the resistivity is 0.001-0.005 Ω & cm.
Wherein, the pre-exposure time in the step (2) is preferably 2 to 3s, the flood exposure time is preferably 50 to 60s, and the development time is preferably 30 to 35s.
Wherein, preferably, the Ti/Au electrode in the step (2) adopts electron beam to deposit Ti with the thickness of 5-15nm, au with the thickness of 20-40nm and the deposition rate
Wherein, preferably, the channel material MoS in the step (3) 2 Is 1-10 layers, and has an area of 1cm × 1cm.
Wherein, preferably, the channel material MoS in the step (4) 2 The orthographic projection on the bottom Au electrode needs to extend 1-2 μm outward to prevent the subsequent Graphene electrode from being conducted with the bottom Au electrode, except for forming a sandwich structure, as shown in FIG. 3.
Wherein, preferably, the channel material MoS in the step (4) 2 The size of (A) is 10-100 μm.
Among them, the graphene in the step (5) is preferably a single layer, and the area is 1cm × 1cm.
Wherein, the exposure time in the step (6) is preferably 2 to 3s, and the development time is preferably 13 to 17s.
Preferably, in the step (6), the Graphene top layer electrode is arranged on the channel material MoS 2 The coincidence size of the orthographic projection on the optical axis should be less than MoS 2 And (c) a size to prevent conduction between the Graphene electrode and the underlying Au electrode, as shown in fig. 5.
Preferably, in the step (6), one end of the metal (Graphene) top electrode, which is far away from the sandwich structure, needs to be connected with the gold electrode prepared in the step (2) to facilitate the test, as shown in fig. 5.
Preferably, the bottom layer in the step (6) is an Au electrode and a channel material MoS 2 The area (namely the working area of the device) overlapped with the orthographic projection of the top-layer Graphene electrode is between 100 and 10 4 μm 2 。
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. in the present invention, moS is used 2 The graphene and the graphene are large-area materials, the provided construction process is compatible with the existing microelectronic process, and the sandwich structure MoS can be realized 2 The size, the position and the number of the photoelectric detectors are controllable, the photoelectric detectors can be suitable for the requirements of different circuits and the planning preparation, and the Au and the MoS are mainly utilized 2 Graphene has different etching resistance characteristics, and is used in patterned MoS 2 Etching gas SF of reactive ion beam used in Graphene process 6 And O 2 Will not react with the gold electrode.
2. In the present invention, for a single MoS 2 Sandwich photoelectric detector, bottom Au electrode, top Graphene electrode and MoS 2 The contact of (a) is achieved by transfer, which is advantageous for achieving an excellent van der waals basis. This is because the conventional process is applied directly to the MoS 2 When metal is deposited, the structure of the two-dimensional material is damaged by heat generated during electron beam deposition, and the performance of the device is further influenced.
3. In the present invention, for a single MoS 2 The sandwich photoelectric detection device has the advantages that electrons and holes generated by illumination only need to pass through MoS under the action of an electric field 2 The thickness of the layer can quickly reach the electrode, and the Graphene electrode has high light transmission property, so that the key indexes of the photoelectric detector such as detection rate response time and the like can be obviously improved; in addition, the asymmetric electrode structure can generate a built-in electric field through the difference of Schottky barriers on the top layer and the bottom layer, and therefore, the built-in electric field is applied to the self-driven photoelectric detector.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic diagram of a patterned metal electrode;
FIG. 2 transfer of Large area MoS 2 A schematic view;
FIG. 3 preparation of patterned MoS 2 A channel schematic;
FIG. 4 transfer of large area Graphene schematic;
FIG. 5 is a schematic diagram of the preparation of a patterned Graphene electrode;
FIG. 6 is a schematic diagram of the device structure
FIG. 7 is a schematic cross-sectional view of the device structure
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating embodiments of the invention, are given by way of illustration only, not by way of limitation, i.e., the embodiments described are intended as a selection of the best mode contemplated for carrying out the invention, not as a full mode. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
The features and properties of the present invention are described in further detail below with reference to examples.
(1) Cleaning a silicon wafer: mixing SiO 2 Cutting the/Si substrate to 1.5X 1.5cm 2 Blowing away large-particle silicon slag remained on the surface of the substrate in the cutting process by using dry nitrogen; putting the substrate into acetone, ultrasonic treating for 15min, anhydrous ethanol for 15min, deionized water for 15min, and blowing with nitrogen gun。
(2) Preparing a patterned metal electrode: spin-coating a photoresist on the processed silicon wafer, wherein the spin-coating speed of a photoetching machine is divided into low speed 1000rpm, high speed 3000rpm, low speed 10s and high speed 30s; placing the sample after glue coating on a heating table at 100 ℃ for heating for 1min, selecting an electrode mask, and modifying the photoresist by adopting an ultraviolet exposure method, wherein the exposure time is 3s of front exposure and 60s of flood exposure respectively, and the development time is 30s; cleaning with deionized water after the development is finished, and drying with nitrogen; depositing Ti/Au by electron beam evaporation at 10nm and 20nm respectively at a deposition rate
After deposition is finished, acetone is adopted to dissolve the photoresist for electrode stripping, and finally, a designed patterned gold electrode is obtained on the substrate, wherein the size of the electrode in the working area of the device is 20 microns multiplied by 20 microns.
(3) Transfer of large area MoS 2 : preparation of 1cm x 1cm double-layer MoS on sapphire substrate 2 Then, a Polystyrene (PS) solution is spin-coated on the surface of the substrate at 3500rpm for 60s, the substrate is placed on a constant-temperature heating plate, heated at 90 ℃ for 15min, baked and taken down; after cooling, the sapphire edge was cut with a pair of tweezers, and immersed in deionized water until MoS was attached 2 The PS film is separated from the sapphire and floats on the water surface, and SiO with a patterned metal electrode is used 2 Fishing out the silicon substrate; placing on a constant temperature heating plate, heating at 80 deg.C for 60min, heating at 150 deg.C for 30min, baking, and taking off; cooling, soaking in toluene solution for 10min, removing PS layer, taking out, sequentially washing with acetone and anhydrous ethanol, and blowing with nitrogen; annealing at 300 ℃ under vacuum for 2h to ensure MoS 2 Good contact with gold electrodes.
(4) Preparation of patterned MoS 2 Channel: spin-coating a photoresist on the substrate prepared in the step (3), wherein the spin-coating and gluing speeds of a photoetching machine are low 1000rpm and high 3000rpm, low 10s and high 30s; exposing for 3s, and developing for 14s to obtain patterned MoS 2 Channel, so that MoS 2 Is located right above the bottom Au electrode to form Van der Waals contact with the bottom Au electrode, wherein MoS in the working region of the device 2 Size of 20 mum×20μm。
(5) Transfer of large area Graphene: preparing 1cm multiplied by 1cm single-layer Graphene on a copper foil, then spin-coating polymethyl methacrylate (PMMA) solution on the copper foil, wherein the coating speed is 1000rpm, the coating speed is 10s, the coating speed is 3000rpm, the coating speed is 30s, placing the copper foil on a constant-temperature heating plate, heating at 100 ℃ for 1min, and then baking and taking down the copper foil; after cooling, the copper foil with Graphene side up was placed in FeCl 3 Corroding the copper foil in the HCl corrosive liquid for 3min, washing with deionized water, repeating for 3 times to remove Graphene on the bottom surface of the copper foil, continuously corroding for about 30min after the copper foil is completely corroded; fishing out the glass slide into deionized water for rinsing for 5min, repeating rinsing for 5 times, fishing out the glass slide by using the substrate prepared in the step (4), placing the glass slide on a constant-temperature heating plate, and heating at 50 ℃, 70 ℃,90 ℃ and 110 ℃ for 5min respectively; cooling, soaking in acetone solution for 10min, removing PMMA layer, taking out, sequentially washing with acetone and anhydrous ethanol, and blowing with nitrogen; annealing at 300 deg.C under vacuum for 2h to ensure Graphene and MoS 2 Good contact with the Au electrode.
(6) Preparation of patterned Graphene electrodes: spin-coating a photoresist on the substrate prepared in the step (5), wherein the spin-coating and gluing speeds of a photoetching machine are low 1000rpm and high 3000rpm, low 10s and high 30s; exposing for 3s, and developing for 14s to obtain a patterned Graphene electrode; one end of the Graphene electrode is arranged in the MoS 2 Forming van der waals contact with the device as a top electrode of the device, wherein the size of Graphene in the working area of the device is 20 micrometers multiplied by 20 micrometers; the other end of the Graphene electrode was brought out through an Au electrode contact for testing.
Claims (12)
1. MoS with sandwich structure 2 The design and construction process of the photoelectric detector array comprises the following steps:
(1) Cleaning a silicon wafer: mixing SiO 2 Cutting the Si substrate into a square substrate, and blowing away large-particle silicon slag remained on the surface of the substrate in the cutting process by using dry nitrogen; and putting the substrate into acetone for ultrasonic treatment for 15min, adding absolute ethyl alcohol for 15min, adding deionized water for 15min, and drying by using a nitrogen gun.
(2) Preparing a patterned metal electrode: spin-coating the processed silicon waferEtching glue, adopting an ultraviolet exposure machine for photoetching and developing, using an electron beam to evaporate a titanium electrode, and stripping to obtain a patterned Au electrode; in which titanium (Ti) is used as substrate SiO 2 Adhesion to Au; a part of the Au electrode is used as the bottom electrode of the device (and MoS) 2 Direct contact), a part of the top Graphene electrode is led out as a connection of the top Graphene electrode so as to be convenient for testing; the size of the electrodes can be designed as desired.
(3) Transfer of large area MoS 2 : preparation of large-area MoS on sapphire substrate 2 Then, a Polystyrene (PS) solution is spin-coated on the surface of the substrate at 3500rpm for 60s, the substrate is placed on a constant-temperature heating plate, heated at 80-90 ℃ for 15min and baked, and then taken down; after cooling, the sapphire is cut along the edge with tweezers, immersed in deionized water until MoS is attached 2 The PS film is separated from the sapphire and floats on the water surface, and SiO with a patterned metal electrode is used 2 Fishing out the silicon substrate; placing on a constant temperature heating plate, heating at 80 deg.C for 60min, heating at 150 deg.C for 30min, baking, and taking off; cooling, soaking in toluene solution for 10min, removing PS layer, taking out, sequentially washing with acetone and anhydrous ethanol, and blowing with nitrogen; annealing at 300 ℃ under vacuum for 2h to ensure MoS 2 Good contact with gold electrodes.
(4) Preparation of patterned MoS 2 Channel: spin-coating photoresist on the substrate prepared in the step (3), ultraviolet exposure lithography, development, and reactive ion etching (SF) 6 ) Obtaining patterned MoS 2 Channel of MoS 2 The electrode is positioned right above the bottom Au electrode to form Van der Waals contact; moS 2 The size of the channel can be designed according to needs; due to Au and SF 6 Do not react and thus in patterning MoS 2 The Au electrode is not affected in the process of (2).
(5) Transferring large area Graphene: preparing large-area Graphene on a copper foil, then spin-coating polymethyl methacrylate (PMMA) solution on the copper foil at the coating speed of 1000rpm, 10s and 30s, placing the copper foil on a constant-temperature heating plate, heating at 100 ℃ for 1min, baking and taking down the copper foil; after cooling, the copper foil with Graphene side up was placed in FeCl 3 Corroding copper foil in HCl corrosive liquid for 3min, washing with deionized water, and repeating for 3Removing Graphene on the bottom surface of the copper foil, continuously corroding for about 30min after the copper foil is completely corroded; fishing out the glass slide into deionized water for rinsing for 5min, repeating rinsing for 5 times, fishing out the glass slide by using the substrate prepared in the step (4), placing the glass slide on a constant-temperature heating plate, and heating at 50 ℃, 70 ℃,90 ℃ and 110 ℃ for 5min respectively; cooling, soaking in acetone solution for 10min, removing PMMA layer, taking out, sequentially washing with acetone and anhydrous ethanol, and drying with nitrogen; annealing at 300 deg.C under vacuum for 2h to ensure Graphene and MoS 2 Good contact with the Au electrode.
(6) Preparation of patterned Graphene electrodes: spin-coating photoresist on the substrate prepared in the step (5), ultraviolet exposure lithography, development, and reactive ion etching (O) 2 ) Obtaining a patterned Graphene electrode; one end of the Graphene electrode is arranged in the MoS 2 The top layer electrode, the bottom layer Au electrode and the channel material MoS of the device are arranged right above the substrate 2 The superposed area of the orthographic projection of the top-layer Graphene electrode and the orthographic projection of the top-layer Graphene electrode is the working area of the device; the other end of the Graphene electrode is led out through Au electrode contact so as to facilitate testing; due to Au and O 2 Does not react and is therefore in patterning MoS 2 The Au electrode is not affected in the process of (3).
2. MoS of sandwich structure according to claim 1 2 The design and construction process of the photoelectric detector array is characterized in that: in the step (1), the thickness of the oxide layer of the substrate is 285nm, the thickness of the substrate is 500 mu m of P-type doped silicon, and the resistivity is 0.001-0.005 omega cm.
3. MoS of sandwich structure according to claim 1 2 The design and construction process of the photoelectric detector array is characterized in that: in the step (2), the pre-exposure time is 2-3s, the flood exposure time is 50-60s, and the development time is 30-35s.
4. MoS of sandwich structure according to claim 1 2 The design and construction process of the photoelectric detector array is characterized in that: the Ti/Au electrode in the step (2) adopts electron beam to deposit Ti of 5-15nm, 20-40nm of Au, and a deposition rate of
5. MoS of sandwich structure according to claim 1 2 The design and construction process of the photoelectric detector array is characterized in that: the channel material MoS in the step (3) 2 Is 1-10 layers, and has an area of 1cm × 1cm.
6. MoS of sandwich structure according to claim 1 2 The design and construction process of the photoelectric detector array is characterized in that: the channel material MoS in the step (4) 2 The orthographic projection on the bottom Au electrode is required to extend 1-2 μm outwards except for forming a sandwich structure so as to prevent the subsequent Graphene electrode from being conducted with the bottom Au electrode.
7. MoS of sandwich structure according to claim 1 2 The design and construction process of the photoelectric detector array is characterized in that: the channel material MoS in the step (4) 2 The size of (A) is 10-100 μm.
8. MoS of sandwich structure according to claim 1 2 The design and construction process of the photoelectric detector array is characterized in that: the graphene in the step (5) is a single layer, and the area is 1cm multiplied by 1cm.
9. MoS of sandwich structure according to claim 1 2 The design and construction process of the photoelectric detector array is characterized in that: in the step (6), the exposure time is 2-3s, and the development time is 13-17s.
10. MoS of sandwich structure according to claim 1 2 The design and construction process of the photoelectric detector array is characterized in that: in the step (6), graphene top layer electrode is arranged on the channel material MoS 2 The coincidence size of the orthographic projection on the surface is less than MoS 2 And the size is used for preventing the conduction of the Graphene electrode and the bottom Au electrode.
11. MoS of sandwich structure according to claim 1 2 The design and construction process of the photoelectric detector array is characterized in that: in the step (6), one end of the metal (Graphene) top layer electrode, which is far away from the sandwich structure, needs to be connected with the gold electrode prepared in the step (2) so as to facilitate the test.
12. MoS of sandwich structure according to claim 1 2 The design and construction process of the photoelectric detector array is characterized in that: in the step (6), the bottom layer Au electrode and the channel material MoS 2 The area (namely the working area of the device) overlapped with the orthographic projection of the top-layer Graphene electrode is between 100 and 10 4 μm 2 。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211149206.1A CN115966626A (en) | 2022-09-21 | 2022-09-21 | Design and construction process of two-dimensional photoelectric detector array with sandwich structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211149206.1A CN115966626A (en) | 2022-09-21 | 2022-09-21 | Design and construction process of two-dimensional photoelectric detector array with sandwich structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115966626A true CN115966626A (en) | 2023-04-14 |
Family
ID=87360537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211149206.1A Pending CN115966626A (en) | 2022-09-21 | 2022-09-21 | Design and construction process of two-dimensional photoelectric detector array with sandwich structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115966626A (en) |
-
2022
- 2022-09-21 CN CN202211149206.1A patent/CN115966626A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4316049A (en) | High voltage series connected tandem junction solar battery | |
| US20100175749A1 (en) | Solar cell and method for manufacturing metal electrode layer to be used in the solar cell | |
| CN107833940B (en) | Photoelectronic device based on two-dimensional molybdenum disulfide-rhenium disulfide heterojunction, preparation method and application | |
| JP5475246B2 (en) | Solar cell | |
| WO2023169245A1 (en) | Method for preparing solar cell, and solar cell | |
| CN109616541A (en) | Transition-metal dichalcogenide transverse direction homogeneity joint solar cell and preparation method thereof | |
| CN112885922A (en) | Based on PtSe2Photoelectric detector with silicon nano-pillar array and preparation method thereof | |
| CN113140644A (en) | Single-sided or double-sided solar cell patterned mask and preparation method of solar cell | |
| CN100565888C (en) | The photoetching method that is used for contacting thin-film semiconductor structures | |
| CN114023844A (en) | Self-driven photoelectric detector and preparation method thereof | |
| CN111081806A (en) | Photoelectric detector based on ultrashort channel graphene and preparation method thereof | |
| JPH0147907B2 (en) | ||
| CN115966626A (en) | Design and construction process of two-dimensional photoelectric detector array with sandwich structure | |
| WO2023098038A1 (en) | Method for preparing columnar electrode structure of perovskite solar cell | |
| Pratiwi et al. | Fabrication of porous silicon using photolithography and reactive ion etching (RIE) | |
| WO2022052534A1 (en) | Solar cell and manufacturing method therefor | |
| JP2014072209A (en) | Photoelectric conversion element and photoelectric conversion element manufacturing method | |
| KR930004126B1 (en) | Single crystal solar cell manufacture method | |
| CN113471324A (en) | Broadband photoelectric detector based on graphene homojunction and preparation method thereof | |
| JP2011096730A (en) | Thin-film solar cell and method of manufacturing the same | |
| CN111785836A (en) | Solar cell with hole transport layer with moth eye structure and preparation method thereof | |
| JPH07106612A (en) | Fabrication of photoelectric converter | |
| CN112885908B (en) | Double-sided light-transmitting flexible thin-film solar cell and preparation method thereof | |
| CN111933724B (en) | Photodiode and preparation method thereof | |
| CN114335213B (en) | Method for preparing high-precision large-area nano structure on insulating substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication |