CN115148890A - Preparation method of niobium-aluminum Josephson junction based on metal mask - Google Patents
Preparation method of niobium-aluminum Josephson junction based on metal mask Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 38
- 239000002184 metal Substances 0.000 title claims abstract description 38
- PEQFPKIXNHTCSJ-UHFFFAOYSA-N alumane;niobium Chemical compound [AlH3].[Nb] PEQFPKIXNHTCSJ-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 39
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 39
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 34
- 239000010955 niobium Substances 0.000 claims abstract description 34
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 11
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 11
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 238000001259 photo etching Methods 0.000 claims abstract description 8
- 238000010894 electron beam technology Methods 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims abstract description 4
- 239000003960 organic solvent Substances 0.000 claims abstract description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 239000011888 foil Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 9
- 239000003570 air Substances 0.000 abstract 1
- 239000003153 chemical reaction reagent Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 21
- 238000005516 engineering process Methods 0.000 description 13
- 230000008901 benefit Effects 0.000 description 6
- 239000003292 glue Substances 0.000 description 5
- 239000002096 quantum dot Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/805—Constructional details for Josephson-effect devices
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Abstract
The invention discloses a preparation method of a niobium-aluminum Josephson junction based on a metal mask, which comprises the following steps: the metal mask shields part of the substrate, and an aluminum film is deposited; oxidizing the aluminum film; performing magnetron sputtering deposition on a 50nm niobium film; removing the metal mask, etching the surface of the niobium film by using ion beams, exposing a new surface of the niobium film, and depositing a 160nm niobium film again; photoetching or electron beam exposure developing to determine the junction area and the upper electrode pattern; and etching by using reactive ions to obtain a junction region, and removing the photoresist in an organic solvent. The method adopts the method of protecting the metal mask and the niobium film to prepare the Josephson junction, greatly simplifies the process of preparing the Josephson junction in the superconducting quantum circuit, breaks through the limitation of the size when the Josephson junction is prepared by the traditional process, effectively reduces the influence of organic reagent, water and air on the oxidation barrier layer on the surface of the aluminum film, and effectively improves the success rate and the reliability of preparing the Josephson junction.
Description
Technical Field
The invention relates to the field of superconducting device preparation, in particular to a method for preparing a niobium-aluminum Josephson junction based on a metal mask.
Background
In 1985, h.devoret et al discovered that superconducting quantization phenomenon exists in superconducting josephson junctions. Scientists then sequentially prepare different superconducting qubits such as phase qubits, charge qubits, flux qubits, transport qubits, and the like. The superconducting qubit as a nonlinear system has strong functions, can be used for performing quantum computation, can also be used for performing microwave single photon detection by utilizing the principle of the coupling effect of the superconducting qubit and microwave photons, and can even be made into a high-quality single photon source. Although the working principle of each superconducting qubit is different in performance, the core devices are all superconducting Josephson junctions. Josephson junctions also have significant applications in many fields such as radio astronomy, satellite radar, terahertz communication, medical detection and the like.
The most widely used superconducting metals in the fabrication of superconducting devices are aluminum and niobium. Wherein the aluminum has a purer superconducting state and a very large coherence length of 1600nm, which is 40 times that of niobium. Moreover, thicker aluminum films exhibit the properties of the first type of superconductor, where the presence of penetrating flux and accompanying noise is absent, and the aluminum films can be quite smooth with fewer defects. Aluminum is susceptible to oxidation by air, which is both an advantage and a disadvantage to josephson junction fabrication. The method has the advantages that the aluminum film can be directly oxidized to obtain the oxidation barrier layer with reliable quality and smaller relative dielectric constant; the disadvantage is that the complete preparation process of the aluminum junction needs to be carried out in a vacuum environment all the time to prevent air from affecting it. At present, the process for preparing the aluminum junction is complex, the aluminum junction is prepared by methods such as a Dolan Bridge preparation method and the like, the method is complex, and the processes such as double-layer glue spin coating, electron beam exposure of the double-layer glue, development to generate a suspension Bridge, electron beam evaporation of aluminum films at different angles, stripping and the like are needed. The other aluminum junction process adopts a cross method, but only small-area aluminum junctions can be prepared, and a stripping process is needed in the preparation process, so that photoresist residue is easily caused, and the junction performance is influenced.
Niobium has a high critical temperature and a high energy gap, a short coherence length of 40nm, a high mechanical strength, a strong substrate adsorption capacity, and can undergo multiple high-temperature and low-temperature cycles. Niobium junctions, however, do not allow a high quality oxide layer to be obtained directly by the oxide electrode method, as do aluminum junctions. The niobium junction needs to adopt a method of growing a silicon oxide protective layer to protect a junction region, the quality of the barrier layer is improved to reduce leakage current, one more photoetching is needed, and the preparation process is relatively complex.
Disclosure of Invention
Aiming at the defects that the traditional aluminum junction process is complex, the area of a prepared junction is small, loss is increased due to glue residue, the traditional niobium junction process is complex, the barrier layer quality is poor and the like, the technical problem to be solved is to provide a method for preparing a niobium-aluminum Josephson junction based on a metal mask.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a preparation method of a niobium-aluminum Josephson junction based on a metal mask comprises the following steps:
1) Covering a part of the substrate by using a metal mask, and depositing an aluminum film on the surface of the clean substrate by adopting electron beam evaporation equipment;
2) Adopting oxygen to oxidize the surface of an aluminum film to obtain an aluminum oxide layer as a barrier layer;
3) Depositing a layer of niobium film to wrap the oxide layer on the surface of the aluminum film by magnetron sputtering;
4) Removing the metal mask, etching the surface of the niobium film by using ion beams, exposing a new surface of the niobium film, and depositing a layer of niobium film with the thickness of 160nm by using magnetron sputtering
5) Defining junction regions by photoetching or electron beam exposure and development;
6) And etching the reactive ions to obtain a junction area and an upper electrode, and removing the photoresist of the sample to obtain the sample.
In step 1), the substrate is cleaned by the following method: the sapphire substrate was placed in acetone and ultrasonically cleaned for 5min at 100W, then the residue was cleaned with alcohol and deionized water, and blown dry with a nitrogen gun, and then baked for 5min on a 95 ℃ baking table.
In the step 1), a high-temperature vacuum adhesive tape is used for fixing the substrate and the aluminum-foil paper on the sample disc, and the aluminum-foil paper shields about half of the substrate.
Step 1), in an interconnected vacuum equipment system, the vacuum degree is controlled to be 1 multiplied by 10 -8 Torr, an aluminum film was deposited on the substrate surface at a rate of 0.2nm/s by electron beam evaporation to a thickness of 80nm.
In the step 2), the oxidation conditions are as follows: the oxygen concentration is more than 99.9 percent, the pressure of the cavity is 7Torr, and the oxidation time is 30min.
In step 3), 50nm of niobium film was deposited using magnetron sputtering at a rate of 0.2 nm/s.
And 4) etching for 5s by using ion beams to expose a fresh surface, and depositing a niobium film for 160nm in magnetron sputtering at a rate of 0.5 nm/s.
In the step 5), the steps of photoetching, exposing and developing are as follows: spin-coating a layer of AZ5214 photoresist on the surface of a sample, firstly rotating at a low rotation speed of 600rpm for 10s, then rotating at a high rotation speed of 3000rpm for 60s, placing the sample on a heating platform, baking at 95 ℃ for 2min, then observing the surface of the sample by using a microscope of an ultraviolet exposure machine, and observing a clear step, defining a junction area on the step, controlling the junction area, and developing for 12s after the exposure for 10s is finished.
And 6), etching by using reactive ion beam etching, introducing SF6 gas until the pressure is 40mTorr, setting the power to be 100W, and etching for 4min.
In the step 6), the organic solvent for removing the photoresist is acetone and ethanol.
Has the advantages that: compared with the prior art, the preparation method of the niobium-aluminum Josephson junction based on the metal mask has the following advantages:
1) The preparation method of the niobium-aluminum Josephson junction based on the metal mask adopts a metal mask technology, a photoetching technology, an electron beam evaporation technology, a magnetron sputtering technology and a reactive ion etching technology to prepare the niobium-aluminum Josephson junction with better performance. The method comprises the steps of shielding an aluminum film on a clean substrate by using a metal mask, obtaining a good oxidation barrier layer on the surface of the aluminum film, and depositing a 50nm niobium film by using a magnetron sputtering technology to protect the barrier layer from being influenced by air when the metal mask is taken down. And (3) after the metal mask is taken down, the surface of the niobium film is etched for 5s by using ion beams, a niobium film with the thickness of 160nm is deposited by using the magnetron sputtering technology again, the position and the size of a junction area are determined at the step of the film by using the electron beam exposure developing technology, and the niobium film which is not protected by the photoresist is removed by using the reactive ion etching technology, so that the preparation of the sample can be finished.
2) The method simplifies the traditional Josephson junction process, is beneficial to preparing large-size, good-consistency and reliable Josephson junctions, and is beneficial to preparing large-scale junction arrays; effectively avoiding the residue of junction glue and improving the performance of the Josephson junction; meanwhile, according to test results, the niobium-aluminum Josephson junction prepared by the method has the advantages of larger energy gap, smaller leakage current, better nonlinearity and the like.
Drawings
FIG. 1 is a flow chart of the fabrication of a niobium aluminum Josephson junction based on a metal mask;
FIG. 2 is an optical image of a niobium aluminum Josephson junction prepared;
fig. 3 is a current-voltage characteristic test chart of the niobium-aluminum josephson junction.
Detailed Description
The present invention will be further described with reference to the following specific examples.
Example 1
A method for preparing a niobium-aluminum Josephson junction based on a metal mask is shown in figure 1, and comprises the following steps:
1) Covering a part of the substrate with a metal mask such as aluminum foil paper of a certain shape, and depositing an aluminum film with a thickness of 80nm on the surface of the clean substrate by an electron beam evaporation device; the specific operation is as follows: the sapphire substrate is placed in acetone and cleaned by 100W ultrasound for 5min, then residues are cleaned by alcohol and deionized water, a nitrogen gun is used for blow-drying, then the sapphire substrate is baked on a baking table at 95 ℃ for 5min, the substrate and aluminum foil paper are fixed on a sample tray by using a high-temperature vacuum adhesive tape, and the substrate is shielded by the aluminum foil paper by about half. Sent into an interconnected vacuum equipment system, and the background vacuum degree of all cavities reaches 1 multiplied by 10 -8 Torr, an aluminum film was deposited at a rate of 0.2nm/s using electron beam evaporation for 80nm.
2) The oxygen concentration is more than 99.9 percent, the pressure of the cavity is 7Torr, oxygen is introduced into the surface of the alumina film for 30 minutes, and the alumina layer is obtained to be used as the barrier layer.
3) Magnetron sputtering was used to deposit 50nm of niobium film at a rate of 0.2nm/s to protect the surface oxide layer of the aluminum film from air.
4) And taking the sample out of the interconnected vacuum system, taking down the metal mask, etching the sample for 5s by using ion beams to expose a fresh surface, and depositing the niobium film for 160nm in magnetron sputtering at the speed of 0.5 nm/s.
5) Photoetching or laser direct writing exposure, and developing to define junction regions; the specific operation is as follows: spin coating a layer of AZ5214 photoresist on the surface of a sample, firstly rotating at a low speed of 600rpm for 10s, then rotating at a high speed of 3000rpm for 60s, placing the sample on a heating platform, baking for 2min at 95 ℃, then observing the surface of the sample by using a microscope of an ultraviolet exposure machine, and observing a clear step, defining a junction area on the step, controlling the junction area, and developing after the exposure is finished.
6) And etching by using reactive ions to obtain a junction region and an upper electrode, and removing the photoresist of the sample to obtain the sample. And etching by using reactive ion beam, introducing SF6 gas until the pressure is 40mTorr, setting the power to be 100W, and etching for 4min to completely etch the niobium film unprotected by the photoresist, wherein the aluminum film and the oxide layer are not influenced. Wherein, the organic solvent for removing the photoresist is acetone and ethanol. The low power ultrasonic machine was used for 10s of ultrasound. Then washing the mixture by using deionized water, and drying the mixture by using a nitrogen gun.
The method comprises the steps of shielding an aluminum film on a clean substrate by using a metal mask, obtaining a good oxidation barrier layer on the surface of the aluminum film, and depositing a 50nm niobium film by using a magnetron sputtering technology to protect the barrier layer from air when the metal mask is taken down. And (3) after the metal mask is taken down, the surface of the niobium film is etched for 5s by using ion beams, a niobium film with the thickness of 160nm is deposited by using the magnetron sputtering technology again, the position and the size of a junction area are determined at the step of the film by using the electron beam exposure developing technology, and the niobium film which is not protected by the photoresist is removed by using the reactive ion etching technology, so that the preparation of the sample can be finished.
The performance of the prepared niobium-aluminum Josephson junction is detected, and the method specifically comprises the following steps:
an optical microscope was used to obtain an optical image of the niobia josephson junction, as shown in fig. 2, a clear aluminum film edge was obtained using a metal mask method, and the junction region of the niobia josephson junction was at the edge.
Current voltage characteristic tests are carried out on the niobium-aluminum Josephson junction by using a current source KEITHLEY 6221 and a voltmeter KEITHLEY 2182A, and the results are shown in figure 3, the test results show that the niobium-aluminum Josephson junction is good in nonlinearity, the energy gap reaches 1.43mV, the energy gap of a common aluminum junction is only 0.30mV, the ratio of leakage current to critical current reaches 3.1%, the ratio of the leakage current to the critical current of a common superconducting qubit required junction is below 10%, and therefore the niobium-aluminum Josephson junction reaches the standard serving as the superconducting qubit.
The method simplifies the traditional Josephson junction process, is beneficial to preparing large-size, good-consistency and reliable Josephson junctions, and is beneficial to preparing large-scale junction arrays; effectively avoiding the residue of junction glue and improving the performance of the Josephson junction; meanwhile, the current-voltage characteristic test result shown in fig. 3 shows that the niobium-aluminum josephson junction prepared by the method has the advantages of better nonlinearity, larger energy gap, smaller leakage current and the like compared with the common aluminum josephson junction.
Claims (10)
1. A preparation method of a niobium-aluminum Josephson junction based on a metal mask is characterized by comprising the following steps:
1) Covering a part of the substrate by using a metal mask, and depositing an aluminum film on the surface of the clean substrate by adopting electron beam evaporation equipment;
2) Adopting oxygen to oxidize the surface of an aluminum film to obtain an aluminum oxide layer as a barrier layer;
3) Depositing a layer of niobium film to wrap the oxide layer on the surface of the aluminum film by magnetron sputtering;
4) Removing the metal mask, etching the surface of the niobium film by using ion beams, exposing a new surface of the niobium film, and depositing a layer of niobium film with the thickness of 160nm by using magnetron sputtering
5) Defining junction regions by photoetching or electron beam exposure and development;
6) And etching the reactive ions to obtain a junction area and an upper electrode, and removing the photoresist of the sample to obtain the sample.
2. The method of claim 1, wherein the metal mask-based niobium aluminum josephson junction is prepared by: in step 1), the substrate is cleaned by the following method: the sapphire substrate was placed in acetone and ultrasonically cleaned for 5min at 100W, then the residue was cleaned with alcohol and deionized water, and blown dry with a nitrogen gun, and then baked for 5min on a 95 ℃ baking table.
3. The method of claim 1, wherein the metal mask-based niobium aluminum josephson junction is prepared by: in the step 1), a high-temperature vacuum adhesive tape is used for fixing the substrate and the aluminum-foil paper on the sample disc, and the aluminum-foil paper shields about half of the substrate.
4. The method of claim 1, wherein the metal mask-based niobium aluminum josephson junction is prepared by: step 1), in an interconnected vacuum equipment system, the vacuum degree is controlled to be 1 multiplied by 10 -8 Torr, an aluminum film was deposited on the substrate surface at a rate of 0.2nm/s by electron beam evaporation to a thickness of 80nm.
5. The method of claim 1, wherein the metal mask-based niobium aluminum josephson junction is prepared by: in the step 2), the oxidation conditions are as follows: the oxygen concentration is more than 99.9 percent, the pressure of the cavity is 7Torr, and the oxidation time is 30min.
6. The method of claim 1, wherein the metal mask-based niobium aluminum josephson junction is prepared by: in step 3), 50nm of niobium film was deposited using magnetron sputtering at a rate of 0.2 nm/s.
7. The method of claim 1, wherein the metal mask-based niobium aluminum josephson junction is prepared by: and 4) etching for 5s by using ion beams to expose a fresh surface, and depositing a niobium film for 160nm in magnetron sputtering at a rate of 0.5 nm/s.
8. The method of claim 1, wherein the metal mask-based niobium aluminum josephson junction is prepared by: in the step 5), the steps of photoetching, exposing and developing are as follows: spin-coating a layer of AZ5214 photoresist on the surface of a sample, firstly rotating at a low rotation speed of 600rpm for 10s, then rotating at a high rotation speed of 3000rpm for 60s, placing the sample on a heating platform, baking at 95 ℃ for 2min, then observing the surface of the sample by using a microscope of an ultraviolet exposure machine, and observing a clear step, defining a junction area on the step, controlling the junction area, and developing for 12s after the exposure for 10s is finished.
9. The method of claim 1, wherein the metal mask-based niobium aluminum josephson junction is prepared by: and 6), etching by using reactive ion beam etching, introducing SF6 gas until the pressure is 40mTorr, setting the power to be 100W, and etching for 4min.
10. The method of claim 1, wherein the metal mask-based niobium aluminum josephson junction is prepared by: in the step 6), the organic solvent for removing the photoresist is acetone and ethanol.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115802873A (en) * | 2022-10-24 | 2023-03-14 | 中国人民解放军战略支援部队信息工程大学 | ALD Josephson junction preparation method based on metal mask etching |
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| CN112467022A (en) * | 2020-11-23 | 2021-03-09 | 南京大学 | Niobium-based probe SQUID electromagnetic sensor and preparation method and application thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115802873A (en) * | 2022-10-24 | 2023-03-14 | 中国人民解放军战略支援部队信息工程大学 | ALD Josephson junction preparation method based on metal mask etching |
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