CN114335213A - Method for preparing high-precision large-area nano structure on insulating substrate - Google Patents
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Abstract
The invention discloses a method for preparing a high-precision large-area nano structure on an insulating substrate, which introduces one or more conducting layers between a spin-coated electron beam glue layer and a thin film layer to be prepared into a micro-nano structure, increases the release rate of high-energy electrons in the electron beam exposure process, and reduces a local electric field, thereby effectively avoiding a large amount of charges from accumulating on the surface of the insulating substrate, and laying a certain technical foundation for further preparing a nano electronic device with a small size, high density and large-area micro-nano structure.
Description
Technical Field
The invention relates to the fields of micro-nano processing technology and infrared single photon detection technology, in particular to a method for preparing a high-precision large-area nano structure on an insulating substrate.
Background
The micro-nano processing technology is one of the indispensable key technologies in the miniaturization and large-scale integration process of optoelectronic devices. At present, the minimum precision of the micro-nano processing technology is developed to be below 5nm, and the performance of related equipment is continuously improved. In scientific experiments, a micro-nano structure is generally prepared by adopting an electron beam exposure technology, and then the required nano optoelectronic device is finally obtained through subsequent processes such as etching and the like. Electron beam exposure is a key process for the development of related nanoelectronic devices. Therefore, the quality of electron beam exposure is an important prerequisite for determining whether a large-area and good-uniformity micro-nano structure can be prepared. One important factor that degrades the quality of electron beam exposure is the electron beam proximity effect. Because during the electron beam exposure process, a part of the large amount of high-energy electrons incident on the electron beam resist excites secondary electrons for exposure, and the other part passes through the electron beam resist to reach the surface of the substrate. At this time, if the substrate has good conductivity, these high-energy electrons can be rapidly conducted away through the substrate to avoid the accumulation of charges on the substrate surface. If the conductivity of the substrate is poor, the high-energy electrons are difficult to release through the substrate, and can be accumulated on the surface of the substrate to form a strong local electric field, and the motion state of secondary electrons can be greatly changed due to the existence of the local electric field, so that the resolution of an exposure pattern is influenced. Furthermore, if the exposed nanostructures are densely distributed, the density of energetic electrons is increased, which, for less conductive and even insulating substrates, undoubtedly further exacerbates the charge accumulation effect on the substrate surface. Therefore, the conductivity of the substrate directly affects the proximity effect of the electron beam.
In the field of low temperature devices, electron beam exposure techniques are widely used. For example, a Superconducting Nanowire Single Photon Detector (SNSPD) developed in the beginning of the twenty-first century is a Single Photon Detector with the best comprehensive performance in the near infrared band. The core detection unit of SNSPD is meanderingThe width of the dense superconducting nanowire is about 50-100 nm, the thickness of the dense superconducting nanowire is 3-10 nm, and the duty ratio of the nanowire is 0.3-0.8. Large photosurfaces, broad spectral response and increased operating temperatures are several important development directions for SNSPDs. On one hand, from the aspect of scientific application, the SNSPD with the large photosurface has very important application prospect in the frontier fields of infrared astronomical exploration, biological fluorescence detection and the like. This is because in these fields, the size of the signal spot received by the detector is usually tens or even hundreds of micrometers, and therefore, the photosensitive surface of the SNSPD needs to be larger than the area of the signal spot, so as to improve the detection efficiency. On the other hand, the current SNSPD has wide substrate selection, such as MgO and MgF2And Al2O3The substrate has the advantages of wide-spectrum transparency from visible light to middle infrared and lattice matching with the superconducting film (for example, the lattice matching of MgO and NbN superconducting film can make NbN obtain the superconducting critical transition temperature exceeding 16K at most), so that the substrate can be used for preparing SNSPD with wide-spectrum response, and simultaneously, the working temperature of the SNSPD can be effectively improved>4.2K), the refrigeration cost is greatly reduced. However, since MgO, MgF2And Al2O3The substrates are insulated, so that a serious electron beam proximity effect is caused in the electron beam exposure process, the effect is more serious along with the increase of the density and the area of an exposure pattern, and a large-area and uniform micro-nano structure is difficult to prepare.
In general, how to prepare a micro-nano structure with small size, high density and large area on a substrate with poor conductivity and even insulation becomes an important difficult problem to be solved urgently in the development of nano electronic devices. At present, a pattern correction method and an exposure dose correction method are reported as related solutions, however, the practical operation of the methods is relatively complex, and the problems of writing field splicing dislocation and the like exist in the electron beam exposure process. In addition, there is a method for reducing the electron beam proximity effect by spin coating a charge-removed resist on a sample, but the resolution of the charge-removed resist on the market is not very high (>30nm), and the method is not complementary to the preparation of nano-structures with the width of only tens of nm.
Disclosure of Invention
The purpose of the invention is as follows: in order to solve the problem that the electron beam exposure generates serious electron beam proximity effect on an insulating substrate, the invention provides a method for preparing a high-precision large-area nano structure on the insulating substrate.
The technical scheme is as follows: a method for preparing a high-precision large-area nano structure on an insulating substrate comprises the following steps:
step 1: growing a film for preparing a micro-nano structure on the surface of a substrate with poor conductivity and even insulation;
step 2: growing one or more conductive layers on the surface of the film;
and step 3: spin-coating electron beam photoresist on the upper surface of the conducting layer, and drying the electron beam photoresist to obtain a sample;
wherein, the material used for the conducting layer has the following physical properties:
the material used for the conducting layer is conductive when the temperature is more than 280K, and is insulating when the temperature is less than 10K;
the material used for the conductive layer has no absorption to visible light or infrared light or the absorption rate is lower than 10 percent;
the material used for the conducting layer is easy to grow in a large area and has a uniform structure;
the conducting layer can not be denatured in the subsequent processes, and the physical and chemical properties of the film can not be influenced. Further, the substrate includes but is not limited to MgO substrate, MgF2Substrate and Al2O3One of the substrates.
Further, the film includes, but is not limited to, one of a NbN film, a Nb film, and a NbTiN film.
Further, the material used for the conductive layer includes, but is not limited to, amorphous Si or Nb5N6。
Further, the electron beam photoresist includes, but is not limited to, one of HSQ, PMMA, ZEP520, and AR-P6200.
The invention also discloses a preparation method of the micro-nano structure material, which comprises the following steps:
preparing a sample by adopting the method for preparing the high-precision large-area nano structure on the insulating substrate;
exposing a micro-nano structure graph on an electron beam photoresist of a sample by importing a micro-nano structure design drawing file to an electron beam exposure system and setting exposure parameters, and obtaining an exposure sample after exposure is completed;
developing and post-baking the exposed sample to obtain a superconducting nanowire pattern;
and transferring the superconducting nanowire pattern on the electron beam photoresist to the film by using etching gas to obtain the micro-nano structure material.
Further, the micro-nano structure design drawing file comprises a graph of the superconducting nanowires, the duty ratio of the graph of the superconducting nanowires, the total area of the superconducting nanowires, the line width of the superconducting nanowires and the distance between the superconducting nanowires.
Further, the etching gas includes, but is not limited to, CF4、SF6、CHF3、Ar、O2One or more of the above gases in combination.
The invention also discloses a preparation method of the nano optoelectronic device, and the nano optoelectronic device is prepared on the basis of the micro-nano structure material prepared by the micro-nano structure material preparation method.
Has the advantages that: compared with the prior art, the invention has the following advantages:
(1) the invention grows a film for preparing a micro-nano structure on a weak conductive or insulating substrate, and introduces a conductive layer structure on the surface of the film and then spin-coats an electron beam photoresist to achieve the purpose of reducing the electron beam approach effect generated in the electron beam exposure process;
(2) by adopting the method provided by the invention, a large-area and good-uniformity micro-nano structure can be prepared on a poor-conductivity or insulating substrate; the method has great benefits for low-temperature devices, particularly for SNSPD preparation, and can enable the SNSPD to simultaneously achieve the goals of large photosurface, wide-spectrum response and increased working temperature (such as growing an NbN superconducting thin film on an MgO insulating substrate to prepare the SNSPD with the large photosurface and the high working temperature (> 4.2K));
(3) the particle size of the introduced conducting layer material can be controlled to be several nanometers or even sub-nanometer magnitude, so that the resolution of an exposure pattern is not reduced;
(4) the method has simple process and strong operability, and can be widely applied to the technical field of large-scale integrated nano optoelectronic devices.
Drawings
FIG. 1 is a schematic sectional view of a MgO insulation substrate after cleaning;
FIG. 2 is a schematic view showing that a NbN superconducting thin film is grown on the upper surface of a MgO insulating substrate;
FIG. 3 shows Nb growth based on FIG. 25N6A schematic view of the conductive layer;
FIG. 4 is a schematic view of a layer of HSQ e-beam glue spin-coated on the substrate of FIG. 3;
FIG. 5 is a top view of a designed serpentine structure of superconducting nanowires;
FIG. 6 is a diagram of the result of exposure development of HSQ e-beam paste on the basis of FIG. 4;
FIG. 7 is Nb in addition to FIG. 65N6A result schematic diagram of the conducting layer and the NbN superconducting film after reactive ion etching;
FIG. 8 is a scanning electron microscope photomicrograph of large area nanowires obtained by electron beam exposure without the introduction of a conductive layer;
FIG. 9 shows a state in which Nb is introduced5N6And the conducting layer is subjected to electron beam exposure to obtain a scanning electron microscope photo of the large-area nanowire.
Detailed Description
The technical solution of the present invention will be further explained with reference to the accompanying drawings and examples.
The invention relates to a method for preparing a high-precision large-area nano structure on an insulating substrate, which comprises the following steps:
step 1: growing a film for preparing a micro-nano structure on the surface of the substrate with high cleanliness, poor conductivity and even insulation, and carrying out ultrasonic cleaning on the substrate on which the film is grown; such substrates with poor or even insulation include, but are not limited to, MgO, MgF2And Al2O3(ii) a When an insulating substrate is selected, the surface roughness RMS of the selected insulating substrate<1 nm. Films grown on the surface of the substrate and used for preparing micro-nano structures include but are not limited to NbN, Nb and NbTiN; the film is grown by the methods including but not limited to direct current magnetron sputtering, co-sputtering, atomic layer stacking and chemical vapor deposition, the thickness of the grown film is 1nm-10nm, and the surface roughness RMS is<1nm。
Step 2: growing one or more conductive layers on the upper surface of the film; the conductive layer is grown by a method including, but not limited to, dc magnetron sputtering, co-sputtering, atomic layer deposition, and chemical vapor deposition.
Now, the following description is made on several physical properties required by the introduced conductive layer material, which is beneficial to quickly find and screen out the conductive layer material meeting the requirements in practical application. In order not to affect the performance of the optoelectronic device, the conductive layer structure should have four main physical properties at the same time: first, the conductive layer is at room temperature (>280K) Conducting electricity at low temperatures: (<10K) Insulating; second, the conductive layer is non-absorptive or absorptive of visible or infrared light below 10%; thirdly, the conducting layer is easy to grow in a large area and has a uniform structure; fourth, the conductive layer is not denatured in the subsequent processes, and does not affect the physical and chemical properties of the thin film. The materials used for the conductive layer may include, but are not limited to, amorphous Si and Nb5N6. The conductive layer has a thickness of 5nm-1000nm and surface roughness RMS<5nm。
And step 3: ultrasonically cleaning again, spin-coating electron beam photoresist on the upper surface of the conducting layer, drying the electron beam photoresist, and conveying the sample into an electron beam exposure system for exposure; the spin-on e-beam resist should have good etch resistance, the e-beam resist thickness is set to 20nm-2000nm, and the selection of species can include, but is not limited to, HSQ, PMMA, ZEP520, and AR-P6200.
And 4, step 4: importing a micro-nano structure design drawing file into an electron beam exposure system, setting exposure parameters, and starting to expose a micro-nano structure graph on an electron beam photoresist; the duty ratio (graph actual area/photosensitive surface) of the micro-nano structure graph is 0.1-1, and the structural shape comprises but is not limited to a winding structure, a broken line structure, a fractal structure or a spiral structure. In setting the exposure parameters, the exposure beam flow may be 0.1 to 10nA, and the exposure dose is set as the case may be.
And 5: and after the exposure is finished, taking out the exposed sample, developing and post-baking. And transferring the micro-nano structure graph on the electron beam photoresist to the film by adopting a reactive ion etching system, thereby obtaining a large-area micro-nano structure with good uniformity. The main etching object of the reactive ion etching system comprises a conductive layer and a thin film. The etching gas is selected differently for different conductive layer materials and thin film materials, and may be selected from etching gases including but not limited to CF4、SF6、CHF3、Ar、O2And the combination formula of the above gases.
Example 1
Based on the above method, this embodiment gives a detailed experimental operation flow by taking the preparation of SNSPD with large photosurface on an insulating substrate as an example, which includes
Step 1: cleaning the MgO insulating substrate 1 with the thickness of 500 mu m by using acetone, ethanol and deionized water, blowing the MgO insulating substrate 1 by using a nitrogen gun after the MgO insulating substrate 1 is cleaned so as to remove water vapor on the surface of the substrate, and measuring the surface roughness RMS of the MgO insulating substrate 1 by using AFM, wherein the RMS is less than 0.5 nm; see fig. 1.
Step 2: growing a 5nm NbN superconducting film 2 for preparing a micro-nano structure on the surface of a high-cleanliness MgO insulating substrate 1 by adopting a direct-current magnetron sputtering instrument, wherein the surface roughness RMS of the growing NbN superconducting film 2 is less than 0.5nm, obtaining a sample shown in figure 2, and carrying out ultrasonic cleaning on the sample.
Because the NbN superconducting film 2 is matched with the MgO insulating substrate 1 in lattice, and the NbN superconducting film 2 grown on the MgO insulating substrate 1 can obtain the superconducting critical transition temperature of 16.5K at most, the method is greatly beneficial to developing SNSPD which can work above the liquid helium temperature (4.2K).
And step 3: growing a layer of Nb with the thickness of 120nm on the surface of the NbN superconducting film 2 by adopting radio frequency magnetron sputtering5N6The material acts as a conductive layer as shown in figure 3. Cleaning the grown NbN superconducting thin film 2 and Nb by respectively adopting acetone, ethanol and deionized water again5N6And the MgO insulating substrate 1 of the conducting layer 3 is dried by a nitrogen gun after being cleaned so as to remove the water vapor on the surface.
And 4, step 4: and selecting the HSQ electron beam photoresist with better etching resistance, wherein the solute concentration percentage of the HSQ is 6%. At Nb5N6The surface of the conductive layer 3 is spin-coated with the electron beam resist 4 to obtain an HSQ electron beam resist layer with a thickness of 200nm, and then the MgO insulating substrate 1 is placed on a baking table with a temperature of 90 ℃ to be baked for 4 minutes to achieve the purpose of curing HSQ, as shown in FIG. 4.
And 5: the structure of the superconductive nanowire is designed to be a meandering structure, and the total area of the nanowire is 80 x 80 μm2The nanowire design line width is 100nm and the spacing is 200nm, as shown in fig. 5. The design file is led into an electron beam exposure system, the electron beam exposure high voltage is set to be 100kV, the exposure beam current is set to be 0.2nA, and the superconducting nanowire graph begins to be written on the electron beam photoresist 4.
Step 6: after the electron beam exposure was completed, the MgO insulating substrate 1 was taken out, developed for 30 seconds at an ambient temperature of 23 ℃ using an HSQ-dedicated developing solution (TMAH developing solution with a solute concentration percentage of 25%) and baked for 2 minutes on a baking stage at a temperature of 90 ℃ to obtain a superconducting nanowire pattern, as shown in fig. 6.
And 7: nb pair by using reactive ion etching system5N6And etching the conducting layer 3 and the NbN superconducting film 2, and transferring the superconducting nanowire pattern to the NbN superconducting film 2. Can select SF6And CHF3The mixed gas of (2) is used as an etching gas. And taking out the substrate after the etching is finished, and obtaining the superconducting nanowire 5 with large area and good uniformity, wherein the schematic cross-sectional structure of the superconducting nanowire is shown in FIG. 7.
To fully illustrate the excellent effects of this example, fig. 8 shows the electron beam exposure effect when only the conductive layer is not introduced, in a case where the other operation steps and operation conditions of example 1 are completely consistent, in relation to the scanning electron microscope photograph. As can be seen from fig. 8, when no conductive layer is introduced, the electron beam proximity effect caused by electron beam exposure is very severe, and the nanowires with large area and uniform structure cannot be exposed. While Nb is introduced into the embodiment 15N6The electron beam exposure effect after the conductive layer is shown in fig. 9, and it can be seen that the widths of the nanowires at the edge and the middle area of the large-area nanowire pattern obtained by the electron beam exposure after the conductive layer is introduced are almost the same, and the uniformity is good, which indicates that the electron beam proximity effect is greatly reduced at this time.
Claims (9)
1. A method for preparing a high-precision large-area nano structure on an insulating substrate is characterized by comprising the following steps of: the method comprises the following steps:
step 1: growing a film for preparing a micro-nano structure on the surface of a substrate with poor conductivity and even insulation;
step 2: growing one or more conductive layers on the surface of the film;
and step 3: spin-coating electron beam photoresist on the upper surface of the conducting layer, and drying the electron beam photoresist to obtain a sample;
wherein, the material used for the conducting layer has the following physical properties:
the material used for the conducting layer is conductive when the temperature is more than 280K, and is insulating when the temperature is less than 10K;
the material used for the conductive layer has no absorption to visible light or infrared light or the absorption rate is lower than 10%.
2. The method of claim 1, wherein the method further comprises the steps of: the substrate comprises a MgO substrate and MgF2Substrate and Al2O3One of the substrates.
3. The method of claim 1, wherein the method further comprises the steps of: the film comprises one of an NbN film, an Nb film and an NbTiN film.
4. The method of claim 1, wherein the method further comprises the steps of: the material used for the conductive layer comprises amorphous Si or Nb5N6。
5. The method of claim 1, wherein the method further comprises the steps of: the electron beam resist comprises one of HSQ, PMMA, ZEP520 and AR-P6200.
6. A method for preparing a micro-nano structure material is characterized by comprising the following steps: the method comprises the following steps:
preparing a sample by using the method for preparing the high-precision large-area nano structure on the insulating substrate according to any one of claims 1 to 5;
exposing a micro-nano structure graph on an electron beam photoresist of a sample by importing a micro-nano structure design drawing file to an electron beam exposure system and setting exposure parameters, and obtaining an exposure sample after exposure is completed;
developing and post-baking the exposed sample to obtain a superconducting nanowire pattern;
and transferring the superconducting nanowire pattern on the electron beam photoresist to the film by using etching gas to obtain the micro-nano structure material.
7. The method for preparing the micro-nano structure material according to claim 6, which is characterized by comprising the following steps: the micro-nano structure design drawing file comprises a graph of the superconducting nanowires, the duty ratio of the graph of the superconducting nanowires, the total area of the superconducting nanowires, the line width of the superconducting nanowires and the distance between the superconducting nanowires.
8. A method for preparing a micro-nano structure material according to claim 6, which comprisesIs characterized in that: the etching gas comprises CF4、SF6、CHF3、Ar、O2One or more of the above gases in combination.
9. A preparation method of a nano photoelectronic device is characterized by comprising the following steps: on the basis of the micro-nano structure material prepared by the micro-nano structure material preparation method of claim 6, a nano optoelectronic device is prepared.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102976264A (en) * | 2012-12-13 | 2013-03-20 | 中国科学院物理研究所 | Method for preparing self-supporting multilayer micro nano structure |
| CN103579405A (en) * | 2012-09-10 | 2014-02-12 | 清华大学 | High-speed SNSPD with high-absorption structure and preparation method of high-speed SNSPD |
| CN110850688A (en) * | 2019-11-28 | 2020-02-28 | 清华大学 | Method for manufacturing optical micro-nano graph on surface of lithium niobate thin film |
| CN112798116A (en) * | 2021-01-13 | 2021-05-14 | 南京大学 | Intermediate infrared superconducting nanowire single photon detector |
| CN112885951A (en) * | 2021-01-27 | 2021-06-01 | 电子科技大学 | Porous superconducting niobium nitride nanowire and preparation method thereof |
| CN113346004A (en) * | 2021-06-04 | 2021-09-03 | 南京大学 | SNSPD with high heat recovery rate and six-nitrogen five-niobium buffer layer |
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579405A (en) * | 2012-09-10 | 2014-02-12 | 清华大学 | High-speed SNSPD with high-absorption structure and preparation method of high-speed SNSPD |
| CN102976264A (en) * | 2012-12-13 | 2013-03-20 | 中国科学院物理研究所 | Method for preparing self-supporting multilayer micro nano structure |
| CN110850688A (en) * | 2019-11-28 | 2020-02-28 | 清华大学 | Method for manufacturing optical micro-nano graph on surface of lithium niobate thin film |
| CN112798116A (en) * | 2021-01-13 | 2021-05-14 | 南京大学 | Intermediate infrared superconducting nanowire single photon detector |
| CN112885951A (en) * | 2021-01-27 | 2021-06-01 | 电子科技大学 | Porous superconducting niobium nitride nanowire and preparation method thereof |
| CN113346004A (en) * | 2021-06-04 | 2021-09-03 | 南京大学 | SNSPD with high heat recovery rate and six-nitrogen five-niobium buffer layer |
Non-Patent Citations (3)
| Title |
|---|
| "Comparison of Superconducting Nanowire Single-Photon Detectors Made of NbTiN and NbN Thin Films", 《IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY》, 30 June 2018 (2018-06-30) * |
| "Sixteen-Pixel NbN Nanowire Single Photon Detector Coupled With 300-μm Fiber", 《 IEEE PHOTONICS JOURNAL》, 29 February 2020 (2020-02-29) * |
| "超导纳米线单光子探测器高效高速特性研究", 《中国博士学位论文全文数据库 基础科学辑》, 15 September 2021 (2021-09-15) * |
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