CN115148891A - Preparation method of high-temperature superconducting Josephson junction - Google Patents
Preparation method of high-temperature superconducting Josephson junction Download PDFInfo
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Abstract
The invention relates to the technical field of superconducting electronics, in particular to a preparation method of a high-temperature superconducting Josephson junction. The preparation method provided by the invention comprises the following steps: preparing Tl on the surface of the substrate 2 Ba 2 CaCu 2 O 8 Annealing the high-temperature superconducting precursor film to obtain the beveling Tl 2 Ba 2 CaCu 2 O 8 A high temperature superconducting thin film; said bevelling Tl 2 Ba 2 CaCu 2 O 8 The c-axis of the high-temperature superconducting film is inclined to the surface of the substrate; at the chamfer Tl 2 Ba 2 CaCu 2 O 8 Preparing a gold plating layer and positive photoresist on the surface of the high-temperature superconducting film in sequence; and photoetching and removing the positive photoresist in sequence, and then carrying out focused ion beam treatment to obtain the high-temperature superconducting Josephson junction. The preparation method can overcome the problems of low junction forming rate and poor consistency existing in the step junction preparation, and can efficiently and stably prepare the high-temperature superconducting Josephson serial junctions with high consistency.
Description
Technical Field
The invention relates to the technical field of superconducting electronics, in particular to a preparation method of a high-temperature superconducting Josephson junction.
Background
Superconducting josephson junctions play a crucial role in ultrasensitive electromagnetic sensors, quantum computing, terahertz detection, and many devices fabricated based on superconducting principles. Particularly, the high-temperature superconducting Josephson junction prepared based on the high-temperature superconducting thin film shows high nonlinear voltage-current characteristics and sensitive high-frequency response, so that the high-temperature superconducting Josephson junction has outstanding application advantages in the fields of radio frequency and terahertz, and the high-temperature superconducting Josephson junction has obvious advantages in improving the working temperature of superconducting electronic equipment, so that the dependence of the superconducting electronic equipment on refrigeration conditions is weakened, and the preparation of the high-performance high-temperature superconducting Josephson junction has great significance in promoting the practicability and application diversification of the superconducting electronic equipment.
Since the josephson effect was discovered and demonstrated for 60 years now, josephson junctions were successively prepared on low temperature superconductors and high temperature superconductors. For the high-temperature superconducting Josephson junction, the preparation of the high-temperature superconducting Josephson intrinsic junction on a beveled substrate, a step substrate and a MESA structure substrate is realized based on a high-temperature superconducting thin film such as YBCO and the like. The preparation of high-temperature superconducting Josephson intrinsic junctions is realized on a double-crystal substrate and a step substrate, and the junctions are applied to the research of a high-temperature superconducting mechanism on one hand and are widely applied to the development of superconducting devices such as a terahertz radiation source, a terahertz detector, a mixer, a SQUID and the like on the other hand. To date, there has been very little research on nano-sized high temperature superconducting josephson junctions, and there is a wide need to efficiently prepare stable high temperature superconducting josephson junctions. The existing method for preparing the high-temperature superconducting Josephson junction has more or less defects, for example, the problems of low junction forming rate and poor junction forming consistency exist in the step junction preparation.
Disclosure of Invention
The invention aims to provide a preparation method of a high-temperature superconducting Josephson junction, which can overcome the problems of low junction forming rate and poor consistency existing in the preparation of a step junction and can efficiently and stably prepare a high-temperature superconducting Josephson tandem junction with high consistency.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of a high-temperature superconducting Josephson junction, which comprises the following steps:
preparing Tl on the surface of the substrate 2 Ba 2 CaCu 2 O 8 Annealing the high-temperature superconducting precursor film to obtain the beveled Tl 2 Ba 2 CaCu 2 O 8 A high temperature superconducting thin film; said bevelling Tl 2 Ba 2 CaCu 2 O 8 The c axis of the high-temperature superconducting film is inclined to the surface of the substrate;
at the chamfer Tl 2 Ba 2 CaCu 2 O 8 Preparing a gold plating layer and positive photoresist on the surface of the high-temperature superconducting film in sequence;
and photoetching and removing the positive photoresist in sequence, and then carrying out focused ion beam treatment to obtain the high-temperature superconducting Josephson junction.
Preferably, the Tl is prepared 2 Ba 2 CaCu 2 O 8 The method of the high-temperature superconducting precursor film comprises magnetron sputtering;
the discharge current of the magnetron sputtering is 50 to 100mA, the voltage is 100 to 200V, and the time is 90 to 150min.
Preferably, the annealing temperature is 750 to 780 ℃ and the annealing time is 60 to 120min.
Preferably, said Tl 2 Ba 2 CaCu 2 O 8 High temperature superconducting precursor film and bevel Tl 2 Ba 2 CaCu 2 O 8 The thickness of the high-temperature superconducting film is 400 to 500nm.
Preferably, the thickness of the gold plating layer is 50 to 100nm;
the preparation method of the photoresist is whirl coating; the rotating speed of the whirl coating is 7000 to 8000rpm, and the time is 45 to 50s.
Preferably, the lithography comprises: transferring the primary structure of the superconductive Josephson junction on the surface of the positive photoresist, exposing with ultraviolet rays, developing with a developing solution, and finally etching.
Preferably, the acceleration voltage of the focused ion beam treatment is 2.00 to 3.00kV, and the ion beam is a gallium ion beam with the beam intensity of 0.10 to 0.30nA.
Preferably, the primary structure of the superconducting josephson junction comprises an antenna region, a junction region and two electrode regions;
the two electrode regions are respectively positioned at two opposite sides of the junction region and the antenna region;
the two electrode areas respectively comprise two square electrodes with the side length of 1.2mm multiplied by 1.2mm to 2.0mm multiplied by 2.0 mm; the distance between the two square electrodes with the side length of 1.2mm multiplied by 1.2mm to 2.0mm multiplied by 2.0mm is 0.7 to 1mm; the distance between the two electrode areas is 2.9 to 4mm.
Preferably, the antenna area consists of a planar log periodic antenna;
the field angle of the feeder line in the center of the planar log-periodic antenna is 45 degrees, and the field angles of the sector sawtooth vibrators connected to the two sides of the feeder line of the planar log-periodic antenna are 45 degrees;
and the two sector antennas of the planar log periodic antenna are respectively positioned at two sides of the junction area.
Preferably, the antenna region, the junction region and the two electrode regions are connected through a connecting line;
the connecting line is composed of superconducting microwires, and the superconducting microwires are positioned on the central axis of the antenna area, the junction area and the two electrode areas;
the width of the superconducting microwire is 0.1-0.2mm.
The invention provides a preparation method of a high-temperature superconducting Josephson junction, which comprises the following steps: preparing Tl on the surface of the substrate 2 Ba 2 CaCu 2 O 8 Annealing the high-temperature superconducting precursor film to obtain the beveling Tl 2 Ba 2 CaCu 2 O 8 A high temperature superconducting thin film; said bevelling Tl 2 Ba 2 CaCu 2 O 8 The c axis of the high-temperature superconducting film is inclined to the surface of the substrate; at the chamfer Tl 2 Ba 2 CaCu 2 O 8 Preparing gold coating and photoetching on the surface of high-temperature superconducting filmGluing; and photoetching and removing the positive photoresist in sequence, and then carrying out focused ion beam treatment to obtain the high-temperature superconducting Josephson junction. The preparation method of the invention is firstly at Tl 2 Ba 2 CaCu 2 O 8 The high-temperature superconducting thin film is used for preparing the Josephson junction with the nanometer size, meanwhile, the stability and the consistency of the high-temperature superconducting Josephson junction depend on the growth quality of the high-temperature superconducting thin film and the size of the nanometer junction, and the size precision of the Josephson junction can be greatly improved by adopting a focused ion beam process with nanometer processing precision based on the high-quality high-temperature superconducting thin film, so that a brand new path is provided for preparing the Josephson junction with the high consistency based on the high-quality high-temperature superconducting thin film.
Drawings
FIG. 1 is a schematic view of a production process of the production method of the present invention;
FIG. 2 is a schematic structural diagram of a primary structure of a high temperature superconducting Josephson junction prepared according to the present invention;
FIG. 3 is an SEM image of a high temperature superconducting Josephson junction prepared in example 1 of the present invention;
FIG. 4 is a schematic view showing the structure of the HTS Josephson junction measured by the four-point method in example 1 of the present invention;
FIG. 5 is an I-V curve measured at 50K for a 1.5 μm wide micron bridge fabricated by conventional photolithographic processes;
FIG. 6 is a graph of the I-V characteristics of a HTS Josephson junction of the present invention measured at a temperature of 50K;
FIG. 7 shows beveling Tl according to the present invention 2 Ba 2 CaCu 2 O 8 TEM image of the high temperature superconducting thin film;
FIG. 8 shows beveling Tl according to the present invention 2 Ba 2 CaCu 2 O 8 A Selected Area Electron Diffraction (SAED) pattern of the high temperature superconducting film;
in FIGS. 1~2 and 4, 1-electrode, 2-antenna, 3-Josephson junction, 4-connecting wire, 5-substrate, 6-Tl 2 Ba 2 CaCu 2 O 8 High temperature superconducting precursor film, 7-Tl 2 Ba 2 CaCu 2 O 8 High temperature superconducting thin film, 8-goldPlating layer, 9-photoresist positive, 10-exposed photoresist positive, 11-electrode connecting line and 12-indium pressing point.
Detailed Description
As shown in fig. 1, the present invention provides a method for preparing a high temperature superconducting josephson junction, comprising the steps of:
preparing Tl on the surface of the substrate 2 Ba 2 CaCu 2 O 8 Annealing the high-temperature superconducting precursor film to obtain the beveled Tl 2 Ba 2 CaCu 2 O 8 (Tl-2212) a high-temperature superconducting thin film; said bevelling Tl 2 Ba 2 CaCu 2 O 8 The c axis of the high-temperature superconducting film is inclined to the surface of the substrate;
at the said chamfer Tl 2 Ba 2 CaCu 2 O 8 Preparing a gold plating layer and positive photoresist on the surface of the high-temperature superconducting film in sequence;
and photoetching and removing the positive photoresist in sequence, and then carrying out focused ion beam treatment to obtain the high-temperature superconducting Josephson junction.
In the present invention, all the starting materials for the preparation are commercially available products known to those skilled in the art unless otherwise specified.
The invention prepares Tl on the surface of a substrate 2 Ba 2 CaCu 2 O 8 Annealing the high-temperature superconducting precursor film to obtain the beveled Tl 2 Ba 2 CaCu 2 O 8 A high temperature superconducting thin film.
In the invention, the substrate is preferably a beveled substrate, and the material of the beveled substrate is preferably lanthanum aluminate (LaAlO) 3 ) The size of the beveled substrate is preferably 10mm multiplied by 12mm, the thickness of the beveled substrate is preferably 0.5mm, and the beveled angle is preferably 20 degrees; the beveling direction of the beveled substrate is parallel to the short side direction of the beveled substrate.
In the present invention, the Tl is prepared 2 Ba 2 CaCu 2 O 8 The method for preparing the high-temperature superconducting precursor film preferably comprises magnetron sputtering; the discharge current of the magnetron sputtering is preferably 50 to 100mA, more preferably 80 to 100mA, and most preferably 100mA; preference of voltageIs 100 to 200V, more preferably 130 to 180V, and most preferably 150 to 160V; the time is preferably 90 to 150min, more preferably 90 to 130min, and most preferably 90 to 100min.
In the present invention, said Tl 2 Ba 2 CaCu 2 O 8 The thickness of the high-temperature superconducting precursor film is preferably 400 to 500nm, more preferably 420 to 480nm, and most preferably 450 to 470nm.
In the invention, the annealing temperature is preferably 750 to 780 ℃, and more preferably 760 to 770 ℃; the time is preferably 60 to 120min, more preferably 90 to 100min.
In the present invention, the purpose of said annealing is to promote Tl 2 Ba 2 CaCu 2 O 8 Tl with excellent crystallization performance of high-temperature superconducting precursor film 2 Ba 2 CaCu 2 O 8 A high temperature superconducting thin film.
In the present invention, the beveling Tl 2 Ba 2 CaCu 2 O 8 The thickness of the high-temperature superconducting thin film is preferably 500nm.
To obtain a bias cut Tl 2 Ba 2 CaCu 2 O 8 After the high temperature superconducting film, the invention is in said bias cutting Tl 2 Ba 2 CaCu 2 O 8 And preparing a gold plating layer and positive photoresist on the surface of the high-temperature superconducting film in sequence.
In the invention, the preparation method of the gold plating layer is preferably magnetron sputtering; the magnetron sputtering process is not limited in any way, and can be carried out by a process known to those skilled in the art.
In the invention, the thickness of the gold plating layer is preferably 50 to 100nm, more preferably 60 to 90nm, and most preferably 70 to 80nm.
In the invention, the gold plating layer can better protect the superconducting Josephson junction from the influence of the ambient humidity.
In the invention, the photoresist is preferably AZP4620 photoresist. In the invention, the preparation method of the positive photoresist is preferably whirl coating; the rotating speed of the whirl coating is preferably 7000 to 8000rpm, more preferably 7200 to 7800rpm, and most preferably 740 to 760rpm; the time is preferably 45 to 50s, more preferably 46 to 49s, and most preferably 47 to 48s. After the whirl coating is finished, the invention also preferably comprises drying, wherein the drying temperature is preferably 89 ℃, and the drying time is preferably 100s; the drying is preferably carried out in an oven.
After preparing and obtaining the gold plating layer and the positive photoresist, the positive photoresist is sequentially subjected to photoetching and positive photoresist removal, and then focused ion beam treatment is carried out, so as to obtain the high-temperature superconducting Josephson junction.
In the present invention, the lithography preferably includes: transferring the primary structure of the superconductive Josephson junction on the surface of the positive photoresist, exposing with ultraviolet rays, developing with a developing solution, and finally etching.
In the present invention, the primary structure of the superconducting josephson junction preferably comprises an antenna region, a junction region and two electrode regions;
the two electrode regions are preferably located at opposite sides of the junction region and the antenna region, respectively;
the two electrode areas preferably comprise two square electrodes with the side length of 1.2mm multiplied by 1.2mm to 2.0mm multiplied by 2.0 mm; the distance between the two square electrodes with the side length of 1.2mm multiplied by 1.2mm to 2.0mm multiplied by 2.0mm is preferably 0.7 to 1mm; the distance between the two electrode areas is preferably 2.9-4 mm.
In the present invention, the antenna area preferably consists of a planar log periodic antenna;
the field angle of the branch feeder line in the center of the planar log-periodic antenna is preferably 45 degrees, and the field angles of the sector sawtooth vibrators connected to the two sides of the branch feeder line of the planar log-periodic antenna are preferably 45 degrees;
the two sector antennas of the planar log periodic antenna are preferably located on either side of the junction region.
In the present invention, the antenna region, the junction region and the two electrode regions are preferably connected by a connection line;
the connecting line is preferably made of superconducting microwires, and the superconducting microwires are preferably positioned on the central axes of the antenna area, the junction area and the two electrode areas;
the width of the superconducting microwire is preferably 0.1-0.2mm.
In the present invention, the junction region is located at the center of the planar log periodic antenna, the junction region includes a three-level linear structure, the line width sizes of the first two poles are respectively 4 μm and 2 μm, and the narrowest dimension is 500nm × 300nm (as shown in fig. 3).
In the present invention, the exposure is preferably ultraviolet exposure, and the time for the ultraviolet exposure is preferably 7 seconds.
In the present invention, the development is preferably carried out after rinsing the sample obtained after the exposure in a positive photoresist developer for 27 seconds, and rapidly rinsing in distilled water twice.
In the present invention, the etching is preferably performed in a pure argon atmosphere. The etching process is not limited in any way, and can be performed by a process known to those skilled in the art.
In the invention, the etching can remove the superconducting thin film on the surface of the specific high-temperature superconducting thin film, which is not covered by the positive photoresist, the residual positive photoresist on the surface of the specific high-temperature superconducting thin film needs to be erased by using acetone after the etching is finished, and the primary structure can be prepared on the surface of the specific high-temperature superconducting thin film by the etching.
In the invention, the acceleration voltage of the focused ion beam treatment is preferably 2.00 to 3.00kV, more preferably 2.2 to 2.8kV and most preferably 2.5 to 2.6kV, and the ion beam is a gallium ion beam with the beam intensity of preferably 0.10 to 0.30nA and more preferably 0.15 to 0.25nA.
In the present invention, the focused ion beam treatment is preferably carried out using a FEI-Helios NanolLab 460HP focused ion beam-electron beam dual beam apparatus manufactured by FEI corporation.
The following will explain the preparation method of the high temperature superconducting josephson junction provided by the present invention in detail with reference to the examples, but they should not be construed as limiting the scope of the present invention.
Example 1
The high-temperature superconducting Josephson junction comprises four electrodes, a planar log periodic antenna, a Josephson junction and a superconducting micron connecting wire;
the preparation process according to the figure 1: in LaAlO 3 A layer of Tl with a thickness of 500nm was prepared by magnetron sputtering (sputtering conditions: 100mA, 150V, 90 min) on the surface of a beveled substrate (10 mm. Times.12 mm in size, 0.5mm in thickness, bevel angle of 20 DEG, bevel direction parallel to the short side of the substrate) 2 Ba 2 CaCu 2 O 8 After the high-temperature superconducting precursor film, the Tl is processed 2 Ba 2 CaCu 2 O 8 Annealing the high-temperature superconducting precursor film (760 ℃,90 min) to obtain Tl 2 Ba 2 CaCu 2 O 8 A high temperature superconducting thin film;
subjecting said Tl to 2 Ba 2 CaCu 2 O 8 Magnetron sputtering a gold coating layer with the thickness of 100nm on the surface of the high-temperature superconducting thin film, spinning glue for 45s at 7000rpm on the surface of the gold coating layer to obtain AZP4620 photoresist positive photoresist, exposing the gold positive photoresist for 7s by ultraviolet rays, transferring the primary structure of the high-temperature superconducting Josephson junction to the thin film, cleaning the photoresist positive photoresist exposed by the ultraviolet rays by positive photoresist developing solution during developing, protecting a covering region from argon ion etching during etching of a part of the photoresist positive photoresist to obtain a primary structure, and erasing the residual photoresist positive photoresist by acetone to obtain the complete primary structure of the high-temperature superconducting Josephson junction, wherein the primary structure comprises an electrode 1, an antenna 2 and a connecting wire 4 in the figure 2, and the primary structure of the high-temperature superconducting Josephson junction is subjected to nanoscale processing by using focused ion beams (the accelerating voltage is 2.00kV, and the ion beams are gallium superconducting ion beams with the beam intensity of 0.10 nA) to obtain the high-temperature superconducting Josephson junction;
performing SEM test on the high-temperature superconducting Josephson junction, wherein the test result is shown in FIG. 3, as can be seen from FIG. 3, the junction region comprises a three-level linear structure, the line width sizes of the front two poles are respectively 4 μm and 2 μm, and the narrowest dimension is 500nm multiplied by 300nm;
FIG. 7 shows beveling Tl according to the present invention 2 Ba 2 CaCu 2 O 8 TEM image of the high temperature superconducting thin film; as shown in FIG. 7, laAlO 3 The c-axis direction of the substrate makes an angle of 20 degrees with the surface of the substrate. The Tl-2212 film grows along the c-axis direction of the substrate. The periodic arrangement of each element in the Tl-2212 crystal shows that the high-quality Tl-2212 film is formed on the oblique cut LaAlO 3 Epitaxial growth on substrate；
FIG. 8 shows beveling Tl according to the present invention 2 Ba 2 CaCu 2 O 8 A Selected Area Electron Diffraction (SAED) pattern of the high temperature superconducting thin film; as can be seen from FIG. 8, the diffraction spots of the crystal lattice of the film are arranged regularly, and the spots clearly show that the arrangement periodicity of each element of the film is good, the phase purity is high, and the consistency of the crystal lattice arrangement is strong;
as shown in fig. 4, four electrode cords are connected by four indium pressing points by a four-point method, and the transmission characteristics of the high-temperature superconducting josephson junction are characterized under different temperature conditions, and the characterization result is shown in fig. 5~6, wherein fig. 5 is an I-V curve measured at 50K temperature by a micrometer bridge (comparative example 1, except that FIB nanomachining is not used in the conventional process, the length and width of the bridge are still large, and the characteristics of each josephson junction connected in series in the micrometer bridge are still different, which cannot ensure the consistency of the serial junctions) with the width of 1.5 μm prepared by the conventional photolithography process; FIG. 6 is a graph of the I-V characteristics of a HTS Josephson junction of the present invention measured at a temperature of 50K; from 5~6, the I-V curve of the microbridge has a large number of branches, indicating poor uniformity of the series superconducting junctions; the high-temperature superconducting Josephson junction is processed by a focused ion beam, the I-V characteristic curve of the nano-sized superconducting junction does not branch any more, and the series superconducting junctions show extremely high consistency;
like the method for preparing the josephson junction in the embodiment, a large amount of test data shows that the preparation of the high-consistency high-temperature superconducting josephson series junction in the invention depends on the high performance of the c-axis inclined growth Tl-2212 superconducting thin film sample and the superiority of the FIB nano process, in other words, the high-quality c-axis inclined growth Tl-2212 superconducting thin film sample and the FIB process are two necessary conditions for preparing the high-consistency high-temperature superconducting josephson series junction.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A preparation method of a high-temperature superconducting Josephson junction is characterized by comprising the following steps:
preparing Tl on the surface of the substrate 2 Ba 2 CaCu 2 O 8 Annealing the high-temperature superconducting precursor film to obtain the beveled Tl 2 Ba 2 CaCu 2 O 8 A high temperature superconducting thin film; said chamfer Tl 2 Ba 2 CaCu 2 O 8 The c axis of the high-temperature superconducting film is inclined to the surface of the substrate;
at the chamfer Tl 2 Ba 2 CaCu 2 O 8 Preparing a gold plating layer and positive photoresist on the surface of the high-temperature superconducting film in sequence;
and photoetching and removing the positive photoresist in sequence, and then carrying out focused ion beam treatment to obtain the high-temperature superconducting Josephson junction.
2. The method of claim 1, wherein said Tl is prepared 2 Ba 2 CaCu 2 O 8 The method of the high-temperature superconducting precursor film comprises magnetron sputtering;
the discharge current of the magnetron sputtering is 50 to 100mA, the voltage is 100 to 200V, and the time is 90 to 150min.
3. The method according to claim 1, wherein the annealing is carried out at a temperature of 750 to 780 ℃ for 60 to 120min.
4. The method of claim 1, 2 or 3, wherein said Tl is 2 Ba 2 CaCu 2 O 8 High temperature superconducting precursor film and bevel Tl 2 Ba 2 CaCu 2 O 8 The thickness of the high-temperature superconducting film is 400 to 500nm.
5. The preparation method according to claim 1, wherein the thickness of the gold plating layer is 50 to 100nm;
the preparation method of the photoresist is whirl coating; the rotating speed of the whirl coating is 7000 to 8000r/min, and the time is 45 to 50s.
6. The method of manufacturing of claim 1, wherein the photolithography comprises: transferring the primary structure of the superconductive Josephson junction on the surface of the positive photoresist, exposing with ultraviolet rays, developing with a developing solution, and finally etching.
7. The preparation method according to claim 1, wherein the acceleration voltage of the focused ion beam treatment is 2.00 to 3.00kV, and the ion beam is a gallium ion beam with a beam intensity of 0.10 to 0.30nA.
8. The method of claim 6, wherein a primary structure of the superconducting Josephson junction comprises an antenna region, a junction region, and two electrode regions;
the two electrode regions are respectively positioned at two opposite sides of the junction region and the antenna region;
the two electrode areas respectively comprise two square electrodes with the side length of 1.2mm multiplied by 1.2mm to 2.0mm multiplied by 2.0 mm; the distance between the two square electrodes with the side length of 1.2mm multiplied by 1.2mm to 2.0mm multiplied by 2.0mm is 0.7 to 1mm; the distance between the two electrode areas is 2.9 to 4mm.
9. The method of claim 8, wherein the antenna field is comprised of a planar log periodic antenna;
the field angle of the feeder line in the center of the planar log-periodic antenna is 45 degrees, and the field angles of the sector sawtooth vibrators connected to the two sides of the feeder line of the planar log-periodic antenna are 45 degrees;
and the two sector antennas of the planar log periodic antenna are respectively positioned at two sides of the junction area.
10. The method of claim 8, wherein the antenna region, the junction region and the two electrode regions are connected by a connection line;
the connecting line is composed of superconducting microwires, and the superconducting microwires are positioned on the central axes of the antenna area, the junction area and the two electrode areas;
the width of the superconducting microwire is 0.1-0.2mm.
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| CN115764260A (en) * | 2022-11-17 | 2023-03-07 | 南通大学 | Butterfly antenna suitable for embedding meander line of superconducting series Josephson double-crystal junction |
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| CN115764260A (en) * | 2022-11-17 | 2023-03-07 | 南通大学 | Butterfly antenna suitable for embedding meander line of superconducting series Josephson double-crystal junction |
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