CN110429388A - A kind of wideband adjustable Terahertz absorber and preparation method thereof based on vanadium dioxide - Google Patents
A kind of wideband adjustable Terahertz absorber and preparation method thereof based on vanadium dioxide Download PDFInfo
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- CN110429388A CN110429388A CN201910723670.9A CN201910723670A CN110429388A CN 110429388 A CN110429388 A CN 110429388A CN 201910723670 A CN201910723670 A CN 201910723670A CN 110429388 A CN110429388 A CN 110429388A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/007—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with means for controlling the absorption
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0084—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a single continuous metallic layer on an electrically insulating supporting structure, e.g. metal foil, film, plating coating, electro-deposition, vapour-deposition
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Abstract
The invention discloses a kind of wideband adjustable Terahertz absorber and preparation method thereof based on vanadium dioxide.The Terahertz absorber cell cross-section is square, from bottom to top successively by basal layer, composite construction layer, dielectric layer, structured metal layer composition.The composite construction layer is made of the dielectric layer of insertion phase-change material frame structure, and the structured metal layer is formed by metal box and metal block nesting.The present invention utilizes the space overlapping of resonance structure in the longitudinal direction, realizes the wide band absorption to THz wave, can change the conductivity of phase-change material in composite construction layer by external drives such as temperature, illumination, completes the modulation to THz wave absorption efficiency.
Description
Technical field
The present invention relates to Terahertz Technology fields, and in particular to a kind of wideband adjustable Terahertz suction based on vanadium dioxide
Acceptor and preparation method thereof.
Background technique
THz wave refer to positioned at microwave and it is infrared between, electromagnetic wave of the frequency range in 0.1THz-10THz.Due to too
Hertz wave is in special spectral range, has many advantageous characteristics.Research finds it in wireless communication, radar imagery, environment
Detection etc. is with important application prospects.For terahertz emission source and Detection Techniques, to Terahertz effector
The research of part relatively lags behind, such as modulator, polarizer and coupler, especially absorber.Trace it to its cause is because in nature
Lack natural, the suitable strong absorbing material of Terahertz, and then hinders and restricts the development and application of THz devices.
The appearance of electromagnetism Meta Materials provides a kind of new method for Terahertz absorber, and electromagnetism Meta Materials refer to some tools
There is the periodic structure material of man-made structures, it appear that extraordinary physical property not available for nature material.The study found that too
Hertz electromagnetism Meta Materials can occur to absorb strongly at its resonant frequency, this provides new way to explore Terahertz absorber
Diameter.However, degree is small, tuned speed is slow there are still tuning for Terahertz Meta Materials absorber at present, the deficiencies of narrower bandwidth, it is
This, the invention proposes a kind of wideband adjustable Terahertz absorber and preparation method thereof based on vanadium dioxide.
Summary of the invention
The invention discloses a kind of wideband adjustable Terahertz absorber and preparation method thereof based on vanadium dioxide.It is described
Terahertz absorber cell cross-section be square, from bottom to top successively by basal layer, composite construction layer, dielectric layer, metal
Structure sheaf composition.The composite construction layer is made of the dielectric layer of insertion phase-change material frame structure, the metal knot
Structure layer is formed by metal box and metal block nesting.The present invention utilizes the space overlapping of resonance structure in the longitudinal direction, realizes
To the wide band absorption of THz wave, the electricity of phase-change material in composite construction layer can change by external drives such as temperature, illumination
Conductance completes the modulation to THz wave absorption efficiency.
In above scheme, base layer material is silicon materials, and the base layer thickness is 10-500 μm.
In above scheme, phase-change material frame structure material is vanadium dioxide, the composite construction in composite construction layer
Layer with a thickness of 0.1-1 μm.
In above scheme, a length of 6-8 μm of the inner edge of phase-change material frame structure in composite construction layer, a length of 14-16 μ in outside
m。
In above scheme, the dielectric material in dielectric layer and composite construction layer is polyimides, the thickness of the dielectric layer
Degree is 3-5 μm.
In above scheme, metal squares structure and metal frame structure material are precious metal material, institute in structured metal layer
The structured metal layer stated with a thickness of 0.01-0.2 μm.
In above scheme, the side length of metal squares structure is 8-9.5 μm in structured metal layer, the inner edge of metal frame structure
A length of 9.5-10 μm, a length of 10-11 μm of outside.
In above scheme, the cross section of Terahertz absorber periodic unit is square, and the unit period is 15-18 μm.
Compared with prior art, the present invention has following features:
1, when phase-change material is metal phase, bandwidth of the Terahertz absorber absorptivity greater than 90% is up to 1.25THz；
2, when phase-change material is medium phase, Terahertz absorber absorptivity all drops to 25% or less；
3, it can be completed to change the conductivity of phase-change material to absorption band by controlling the temperature of absorber working environment
Wide modulation, to realize tunable function；
4, the present invention has many advantages, such as that structure is simple, tuned speed is fast, tune depth is big, switch and filter in Terahertz etc.
Field has important application value.
Detailed description of the invention
Fig. 1 is the schematic view of the front view of the Terahertz absorber based on vanadium dioxide of the embodiment of the present invention.
Fig. 2 is that the plan structure of composite construction layer in the Terahertz absorber based on vanadium dioxide of the embodiment of the present invention is shown
It is intended to.
Fig. 3 is that the plan structure of structured metal layer in the Terahertz absorber based on vanadium dioxide of the embodiment of the present invention is shown
It is intended to.
Fig. 4 is the Electromagnetic Simulation result of the Terahertz absorber based on vanadium dioxide of the embodiment of the present invention, wherein phase transformation
Material is metal phase.
Fig. 5 is the Electromagnetic Simulation result of the Terahertz absorber based on vanadium dioxide of the embodiment of the present invention, wherein phase transformation
Material is medium phase.
It is indicated in figure: 1, basal layer；2, composite construction layer；3, dielectric layer；4, structured metal layer；5 is in composite construction layers
Phase-change material frame structure；6,7 be respectively dielectric structure in composite construction layer；8,9 be respectively metal squares in structured metal layer
With metal frame structure.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention:
Referring to FIG. 1, FIG. 2 and FIG. 3, the invention discloses a kind of wideband adjustable Terahertz absorber based on vanadium dioxide
And preparation method thereof.The Terahertz absorber cell cross-section is square, compound from bottom to top successively by basal layer 1
Structure sheaf 2, dielectric layer 3, structured metal layer 4 form, wherein the composite construction layer 2 is by insertion phase-change material frame structure
5 dielectric layer composition, the structured metal layer are formed by metal squares 8 are nested with 9 structure of metal box.
Present example additionally provides a kind of wideband adjustable Terahertz based on vanadium dioxide for preparing previous embodiment
The preparation method of absorber, the preparation method the following steps are included:
S1: providing basal layer 1, cleans basal layer and dries up, basal layer lower surface of polishing.
S2: vapour deposition process synthesis of polyimides coating is used in the basal layer upper surface, gluing is then carried out, exposes
Light, development, etching and cleaning obtain dielectric structure 6,7 in composite construction layer.
S3: obtaining phase change material film in composite construction layer using chemical deposition on the basal layer, then into
Row gluing, exposure, development, etching and cleaning obtain phase change material structure 5 in composite construction layer.
S4: dielectric layer 3 is obtained using vapour deposition process on the composite construction layer.
S5: deposition obtains metal prefilter layer on the dielectric layer, is carved using photoetching process to metal prefilter layer
Erosion obtains structured metal layer 4.
After above-mentioned preparation method, so that it may obtain the wideband adjustable terahertz based on vanadium dioxide of previous embodiment
Hereby absorber.In the present embodiment, the unit period is preferably 16.3 μm, and the thickness of basal layer 1 is preferably 200 μm, composite junction
The thickness of structure layer 2 is preferably 0.2 μm, and the thickness of dielectric layer 3 is preferably 4.4 μm, and the thickness of structured metal layer 4 is preferably 0.03 μ
M, the interior side length and outer side length of phase-change material frame structure 5 are respectively preferably 7.0 μm and 15.6 μm, metal knot in composite construction layer
The side length of metal squares 8 in structure layer and the inside and outside side length of metal box 9 are successively preferably 9.2 μm, 9.75 μm, 10.0 μm.Gold
The metal square structure 8 and 9 material of metal box belonged in structure sheaf is gold, and the dielectric material in dielectric layer 3 is polyimides, multiple
Closing the phase-change material in structure sheaf 3 is vanadium dioxide.
The Terahertz absorber obtained using the preparation method of the embodiment of the present invention, can greatly improve the suction of THz wave
Yield.Referring to Fig. 4, when to give phase-change material be metal phase, the absorption spectrum of Terahertz absorber.It can be seen from the figure that
Bandwidth of the Terahertz absorber absorptivity greater than 90% is up to 1.25THz, centre frequency 4.94THz.
Referring to Fig. 5, when to give phase-change material be medium phase, the absorption spectrum of Terahertz absorber.In present embodiment
In, structural parameters are consistent with the structural parameters in upper embodiment, the difference is that vanadium dioxide is in medium phase.It can be with from figure
Find out, Terahertz absorber absorptivity is below 25% in 3THz-7THz, it can thus be seen that as phase-change material is from Fig. 4
When metal phase change is at Fig. 5 medium phase, significant change occurs for absorptivity, realizes tunable function, this is design Terahertz filter
Wave device and switch provide a kind of new method.
Claims (9)
1. the invention discloses a kind of wideband adjustable Terahertz absorber and preparation method thereof based on vanadium dioxide.Its feature
It is that the Terahertz absorber cell cross-section is square, from bottom to top successively by basal layer, composite construction layer, medium
Layer, structured metal layer composition.The composite construction layer is made of the dielectric layer of insertion phase-change material frame structure, described
Structured metal layer is formed by metal box is nested with metal squares.
2. Terahertz absorber according to claim 1, it is characterised in that the base layer material is silicon materials, described
Base layer thickness is 10-500 μm.
3. Terahertz absorber according to claim 1, it is characterised in that square metal structure in the structured metal layer
It is precious metal material with box structural metallic materials, the structured metal layer is with a thickness of 0.01-0.2 μm.
4. structured metal layer according to claim 3, it is characterised in that the side length of the metal squares structure is 8-9.5
μm, a length of 9.5-10 μm of the inner edge of metal frame structure, a length of 10-11 μm of outside.
5. Terahertz absorber according to claim 1, the thickness of dielectric layers is 3-5 μm.
6. Terahertz absorber according to claim 1, it is characterised in that the medium of the composite construction layer, dielectric layer
Material is polyimides, and the composite construction layer is made of the dielectric layer of insertion phase-change material frame structure, and described answers
Closing Laminate construction thickness is 0.1-1 μm.
7. composite construction layer according to claim 6, it is characterised in that phase-change material box in the composite construction layer
A length of 6-8 μm of the inner edge of structure, a length of 14-16 μm of outside.
8. Terahertz absorber according to claim 1, it is characterised in that the cross of the Terahertz absorber periodic unit
Section is square, and the unit period is 15-18 μm.
9. a kind of preparation method of the wideband adjustable Terahertz absorber based on vanadium dioxide, which is characterized in that including following
Step:
Basal layer is provided, basal layer is cleaned and is dried up, basal layer lower surface of polishing.
Vapour deposition process synthesis of polyimides coating is used in the basal layer upper surface, gluing is then carried out, exposure, shows
Shadow, etching and cleaning obtain dielectric structure in composite construction layer.
Phase change material film in composite construction layer is obtained using chemical deposition (PECVD) deposition on the basal layer, so
Gluing, exposure, development are carried out afterwards, and etching and cleaning obtain phase change material structure in composite construction layer.
It deposits to obtain dielectric layer using chemical vapor deposition on the composite construction layer.
Deposition obtains metal prefilter layer on the dielectric layer, performs etching to obtain gold to metal prefilter layer using photoetching process
Belong to structure sheaf.
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| CN201910723670.9A CN110429388A (en) | 2019-08-06 | 2019-08-06 | A kind of wideband adjustable Terahertz absorber and preparation method thereof based on vanadium dioxide |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111900552A (en) * | 2020-08-13 | 2020-11-06 | 中国计量大学 | Temperature control reflection type terahertz polarization converter with absorption function |
| CN112086758A (en) * | 2020-09-14 | 2020-12-15 | 重庆大学 | Double-control broadband terahertz wave absorber based on Dirac semimetal and water |
| CN113054440A (en) * | 2021-03-18 | 2021-06-29 | 四川大学 | Double-control broadband THz absorber based on vanadium dioxide and graphene |
| CN113451783A (en) * | 2021-06-18 | 2021-09-28 | 西安交通大学 | Phase-change controllable composite wave absorber and preparation and performance regulation and control method thereof |
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| CN103247839A (en) * | 2013-04-02 | 2013-08-14 | 华中科技大学 | Switching-controllable THz wave metamaterial perfect absorber and control method thereof |
| CN106435472A (en) * | 2016-10-18 | 2017-02-22 | 天津大学 | Preparation method of gold triangular nanoparticle array and vanadium dioxide film composite embedded structure |
| CN108777370A (en) * | 2018-05-25 | 2018-11-09 | 天津工业大学 | A kind of wideband adjustable Terahertz absorber based on double different composite construction layers |
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| CN103247839A (en) * | 2013-04-02 | 2013-08-14 | 华中科技大学 | Switching-controllable THz wave metamaterial perfect absorber and control method thereof |
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| CN108777370A (en) * | 2018-05-25 | 2018-11-09 | 天津工业大学 | A kind of wideband adjustable Terahertz absorber based on double different composite construction layers |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111900552A (en) * | 2020-08-13 | 2020-11-06 | 中国计量大学 | Temperature control reflection type terahertz polarization converter with absorption function |
| CN111900552B (en) * | 2020-08-13 | 2022-01-18 | 中国计量大学 | Temperature control reflection type terahertz polarization converter with absorption function |
| CN112086758A (en) * | 2020-09-14 | 2020-12-15 | 重庆大学 | Double-control broadband terahertz wave absorber based on Dirac semimetal and water |
| CN112086758B (en) * | 2020-09-14 | 2021-12-28 | 重庆大学 | Double-control broadband terahertz wave absorber based on Dirac semimetal and water |
| CN113054440A (en) * | 2021-03-18 | 2021-06-29 | 四川大学 | Double-control broadband THz absorber based on vanadium dioxide and graphene |
| CN113451783A (en) * | 2021-06-18 | 2021-09-28 | 西安交通大学 | Phase-change controllable composite wave absorber and preparation and performance regulation and control method thereof |
| CN113451783B (en) * | 2021-06-18 | 2022-12-09 | 西安交通大学 | Phase-change controllable composite wave absorber and preparation and performance regulation and control method thereof |
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Application publication date: 20191108 |