CN111900552A - Temperature control reflection type terahertz polarization converter with absorption function - Google Patents
Temperature control reflection type terahertz polarization converter with absorption function Download PDFInfo
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- CN111900552A CN111900552A CN202010814132.3A CN202010814132A CN111900552A CN 111900552 A CN111900552 A CN 111900552A CN 202010814132 A CN202010814132 A CN 202010814132A CN 111900552 A CN111900552 A CN 111900552A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
- H01Q15/242—Polarisation converters
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Abstract
The invention discloses a temperature control reflection type terahertz polarization converter with an absorption function. The vanadium dioxide/vanadium dioxide composite material is composed of a pre-designed and periodic unit structure, wherein the structural unit sequentially comprises a top metal microstructure layer, an upper dielectric layer, a middle vanadium dioxide layer, a middle metal microstructure layer, a lower dielectric layer and a bottom metal layer from top to bottom. The state of vanadium dioxide is controlled by changing the temperature, and the designed structure can realize the high-efficiency polarization conversion and absorption functions of the reflective terahertz wave. The temperature control reflection type terahertz polarization converter with the absorption function has the advantages of compact structure, novel design, excellent performance and the like, and has potential application prospects in terahertz imaging and terahertz communication.
Description
Technical Field
The invention relates to a terahertz polarization converter, in particular to a temperature control reflection type terahertz polarization converter with an absorption function.
Background
The metamaterial is a novel artificially designed electromagnetic material, the structure of the metamaterial is generally composed of periodic array units with sub-wavelength sizes, and the metamaterial has many extraordinary physical properties different from conventional materials in the nature. The metamaterial is not a new material form, but is a novel design method for artificially combining and designing conventional materials in nature to realize unique physical properties such as negative refraction, electromagnetic stealth and the like, and the metamaterial is a brand new design concept and brings great change to the traditional thinking mode of materials.
The terahertz polarization converter is an important functional device in a terahertz system, and the polarization state has important application in the aspects of communication, navigation, radar detection and the like, so that the control of the polarization state of electromagnetic waves is very important. Because different polarization states of terahertz waves have great influence on various characteristics of the terahertz waves, the control and processing of the polarization states of the terahertz waves are always the focus of attention in the scientific and technological field, polarization conversion and absorption are widely applied in the fields of satellite navigation, communication and the like, and the development of the terahertz polarization converter is very important.
Disclosure of Invention
The invention aims to solve the defects in the prior art and provides a temperature-controlled reflective terahertz polarization converter with an absorption function. The technical scheme of the invention is as follows:
a temperature control reflection type terahertz polarization converter with an absorption function comprises NxN structural units, wherein N is a natural number larger than 0, the NxN structural units are periodically arranged on a plane vertical to the input direction of terahertz waves, each structural unit is in a cuboid shape, and the NxN structural units are continuously spliced on the plane; each structural unit is of a multilayer structure and sequentially comprises a top metal microstructure, an upper dielectric layer, a middle vanadium dioxide layer, a middle metal microstructure layer, a lower dielectric layer and a bottom metal layer from top to bottom; the top metal microstructure layer consists of a pair of isosceles right triangle metal patches and a metal strip, the two isosceles right triangle metal patches are respectively attached to two opposite angles of the upper medium layer, two right-angle sides of each isosceles right triangle metal patch are respectively overlapped with two vertical sides of the upper medium layer, a rectangular notch is formed in the center of the bottom side of each isosceles right triangle metal patch, the metal strip is laid along the diagonal line of the top surface of the upper medium layer, and two ends of the metal strip respectively extend into the rectangular notches of the pair of isosceles right triangle metal patches but are not in contact with the isosceles right triangle metal patches; the middle metal microstructure layer consists of four same metal square rings, and the four metal square rings are arranged between the middle vanadium dioxide layer and the lower dielectric layer at intervals in a 2 x 2 array form; the converter controls the state of vanadium dioxide by changing the temperature so as to realize the functions of absorption and polarization conversion of terahertz waves.
The specific parameters of each part in the scheme can adopt the following preferable modes:
preferably, each of the N × N structural units is a square in a plan view, and a side of the square is 110 μm to 130 μm.
Preferably, in the top metal microstructure layer, the waist length of the isosceles right triangle metal patch is 35-45 μm, the depth of a rectangular gap is 8-12 μm, and the width is 6-10 μm; the length of the metal strip is 100-120 mu m, and the width of the metal strip is 6-10 mu m; the isosceles right triangle metal patch and the metal strip are made of copper and have the thickness of 0.5 mu m.
Preferably, the upper dielectric layer is made of quartz and has a thickness of 30-50 μm.
Preferably, the lower dielectric layer is made of quartz and has a thickness of 30-50 μm.
Preferably, the material of the middle vanadium dioxide layer is vanadium dioxide, and the thickness is 1 μm.
Preferably, in the intermediate metal microstructure layer, the four metal square rings are copper rings, the side length is 25 to 35 μm, the width is 4 to 6 μm, and the thickness is 0.5 μm.
Preferably, the bottom metal layer is made of copper and has a thickness of 0.5 μm.
The temperature control reflection type terahertz polarization converter with the absorption function has the advantages of novel design, compact structure, low cost, high polarization conversion ratio and the like. When the vanadium dioxide is in a metallic state, the polarization conversion ratio is more than 99.9% at 0.49THz and 0.73 THz; when the vanadium dioxide is in an insulating state, the absorption ratio at 0.71THz exceeds 99.8 percent, and the application requirements of satellite navigation, imaging, terahertz communication and the like are greatly met.
Drawings
FIG. 1 is a schematic representation of a metamaterial of the present invention;
FIG. 2 is a three-dimensional schematic diagram of a temperature-controlled reflective terahertz polarization converter unit structure with an absorption function;
FIG. 3 is a top view of a top metal microstructure layer of a temperature-controlled reflective terahertz polarization converter with absorption function;
FIG. 4 is a top view of an intermediate metal microstructure layer of a temperature-controlled reflective terahertz polarization converter with an absorption function;
FIG. 5 is a graph of co-polarization reflection coefficient and cross-polarization reflection coefficient when terahertz waves are vertically incident when vanadium dioxide is in a metal state;
FIG. 6 is a graph of the polarization conversion ratio of terahertz waves incident perpendicularly when vanadium dioxide is in a metallic state;
FIG. 7 is a graph of co-polarization reflection coefficient and cross-polarization reflection coefficient when terahertz waves are vertically incident when vanadium dioxide is in an insulating state;
FIG. 8 is a graph of vanadium dioxide in the insulating state; and (3) an absorption rate curve graph when the terahertz waves are vertically incident.
Detailed Description
As shown in fig. 1 to 4, a metamaterial schematic diagram and a unit structure schematic diagram of a temperature-controlled reflective terahertz polarization converter with an absorption function include N × N structural units 7, where N is a natural number greater than 0, and a specific N value may be set as required. The N × N structural units 7 are periodically arranged on a plane perpendicular to the terahertz wave input direction, each structural unit 7 is in a rectangular parallelepiped shape with a square cross section, and the N × N structural units 7 are continuously spliced on the plane. Each structural unit 7 is of a multilayer structure and sequentially comprises a top metal microstructure 1, an upper dielectric layer 2, a middle vanadium dioxide layer 3, a middle metal microstructure layer 4, a lower dielectric layer 5 and a bottom metal layer 6 from top to bottom. Wherein, top layer metal micro-structure layer 1 comprises a pair of isosceles right triangle-shaped metal paster 8 and a metal strip 9, two isosceles right triangle-shaped metal paster 8 laminate respectively in two diagonal departments of last dielectric layer 2, and two right-angle sides of every isosceles right triangle-shaped metal paster 8 coincide with two vertically limits of last dielectric layer 2 respectively, the base central point of every isosceles right triangle-shaped metal paster 8 puts and has seted up the rectangle breach, metal strip 9 lays along the diagonal slope 45 of 2 top surfaces of last dielectric layer, both ends stretch into respectively in a pair of isosceles right triangle-shaped metal paster 8's the rectangle breach but with isosceles right triangle-shaped metal paster 8 contactless. The whole isosceles right triangle metal patch 8 is of a left-right mirror symmetry structure. The middle metal microstructure layer 4 is composed of four identical metal square rings 10, the four metal square rings 10 are arranged between the middle vanadium dioxide layer 3 and the lower dielectric layer 5 in a 2 x 2 array mode, and intervals are kept between the adjacent metal square rings 10. The converter controls the state of vanadium dioxide by changing the temperature so as to realize the functions of absorption and polarization conversion of terahertz waves.
The specific materials and parameters for each part are as follows: in the N × N structural units 7, the plan view of each structural unit 7 is a square, and the side length of the square is 110 μm to 130 μm. In the top metal microstructure layer 1, the waist length of the isosceles right triangle metal patch 8 is 35-45 μm, the depth of the rectangular gap is 8-12 μm, and the width is 6-10 μm; the length of the metal strip 9 is 100-120 μm, and the width is 6-10 μm; the isosceles right triangle metal patch 8 and the metal strip 9 are made of copper and have a thickness of 0.5 μm. The upper dielectric layer 2 is made of quartz and has a thickness of 30-50 μm. The lower dielectric layer 5 is made of quartz and has a thickness of 30-50 μm. The material of the middle vanadium dioxide layer 3 is vanadium dioxide, and the thickness is 1 μm. In the intermediate metal microstructure layer 4, four metal square rings 10 are copper rings, the side length is 25 to 35 μm, the width is 4 to 6 μm, and the thickness is 0.5 μm. The bottom metal layer 6 is made of copper and has a thickness of 0.5 μm.
The following describes specific technical effects of the temperature-controlled reflective terahertz polarization converter by way of example.
Example 1
In this embodiment, the structure and the shapes of the components of the temperature-controlled reflective terahertz polarization converter with the absorption function are as described above, and therefore are not described in detail. However, the specific parameters of each component are as follows: the structure unit comprises N multiplied by N structural units which are arranged periodically, the top view of each structural unit is square, and the side length of each square is 120 mu m. The waist length of the isosceles triangle metal patch in the top metal microstructure layer is 40 μm, the depth of a rectangular gap is 14 μm, and the width is 14 μm; the length of the metal strip is 110 μm, and the width is 8 μm; the isosceles right triangle metal patch and the metal strip are made of copper and have the thickness of 0.5 mu m. The upper dielectric layer and the lower dielectric layer are made of quartz, and the thickness of the upper dielectric layer and the thickness of the lower dielectric layer are both 40 micrometers. The middle vanadium dioxide layer is made of vanadium dioxide and has the thickness of 1 mu m. In the intermediate metal microstructure layer, four identical metal square rings are all copper rings, the side length is 30 micrometers, the width is 5 micrometers, the thickness is 0.5 micrometers, and the distance between every two adjacent metal square rings is 30 micrometers. The bottom metal layer is made of copper and has a thickness of 0.5 μm. The temperature control reflection type terahertz polarization converter realizes control over the state of vanadium dioxide through temperature change, so that the control functions of terahertz wave polarization conversion and absorption are achieved. FIG. 5 is a graph of co-polarization reflection coefficient and cross-polarization reflection coefficient when terahertz waves are vertically incident when vanadium dioxide is in a metal state; FIG. 6 is a graph of the polarization conversion ratio of terahertz waves incident perpendicularly when vanadium dioxide is in a metallic state; FIG. 7 is a graph of co-polarization reflection coefficient and cross-polarization reflection coefficient when terahertz waves are vertically incident when vanadium dioxide is in an insulating state; fig. 8 is an absorption rate curve of a terahertz wave at normal incidence when vanadium dioxide is in an insulating state. When the vanadium dioxide is in a metallic state, the polarization conversion ratio is more than 99.9% at 0.49THz and 0.73 THz; when the vanadium dioxide is in the insulating state, the absorption ratio exceeds 99.8% at 0.71 THz.
Claims (8)
1. A temperature control reflection type terahertz polarization converter with an absorption function is characterized by comprising N x N structural units (7), wherein N is a natural number larger than 0, the N x N structural units (7) are periodically arranged on a plane vertical to the input direction of terahertz waves, each structural unit (7) is in a cuboid shape, and the N x N structural units (7) are continuously spliced on the plane; each structural unit (7) is of a multilayer structure and sequentially comprises a top metal microstructure (1), an upper dielectric layer (2), a middle vanadium dioxide layer (3), a middle metal microstructure layer (4), a lower dielectric layer (5) and a bottom metal layer (6) from top to bottom; the top metal microstructure layer (1) is composed of a pair of isosceles right triangle metal patches (8) and a metal strip (9), the two isosceles right triangle metal patches (8) are respectively attached to two opposite angles of the upper dielectric layer (2), two right-angle sides of each isosceles right triangle metal patch (8) are respectively superposed with two vertical sides of the upper dielectric layer (2), a rectangular notch is formed in the center of the bottom side of each isosceles right triangle metal patch (8), the metal strip (9) is laid along the diagonal line of the top surface of the upper dielectric layer (2), and two ends of the metal strip respectively extend into the rectangular notches of the pair of isosceles right triangle metal patches (8) but are not in contact with the isosceles right triangle metal patches (8); the middle metal microstructure layer (4) consists of four same metal square rings (10), and the four metal square rings (10) are arranged between the middle vanadium dioxide layer (3) and the lower dielectric layer (5) at intervals in a 2 x 2 array form; the converter controls the state of vanadium dioxide by changing the temperature so as to realize the functions of absorption and polarization conversion of terahertz waves.
2. The temperature-controlled reflective terahertz polarization converter with the absorption function as claimed in claim 1, wherein, in the N × N structural units (7), each structural unit (7) is square in plan view, and the side length of the square is 110 μm to 130 μm.
3. The temperature-controlled reflective terahertz polarization converter with the absorption function as claimed in claim 1, wherein in the top metal microstructure layer (1), the isosceles right triangle metal patch (8) has a waist length of 35 μm to 45 μm, a rectangular notch depth of 8 μm to 12 μm, and a width of 6 μm to 10 μm; the length of the metal strip (9) is 100-120 mu m, and the width is 6-10 mu m; the isosceles right triangle metal patch (8) and the metal strip (9) are made of copper and have the thickness of 0.5 mu m.
4. The temperature-controlled reflective terahertz polarization converter with the absorption function as claimed in claim 1, wherein the upper dielectric layer (2) is made of quartz and has a thickness of 30 μm to 50 μm.
5. The temperature-controlled reflective terahertz polarization converter with the absorption function as claimed in claim 1, wherein the material of the lower dielectric layer (5) is quartz, and the thickness is 30 μm to 50 μm.
6. The temperature-controlled reflective terahertz polarization converter with the absorption function as claimed in claim 1, wherein the material of the middle vanadium dioxide layer (3) is vanadium dioxide, and the thickness is 1 μm.
7. The temperature-controlled reflective terahertz polarization converter with absorption function as claimed in claim 1, wherein in the intermediate metal microstructure layer (4), four metal square rings (10) are copper rings, and have a side length of 25 μm to 35 μm, a width of 4 μm to 6 μm, and a thickness of 0.5 μm.
8. The temperature-controlled reflective terahertz polarization converter with absorption function of claim 1, wherein the material of the bottom metal layer (6) is copper and has a thickness of 0.5 μm.
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| CN112864632A (en) * | 2020-12-31 | 2021-05-28 | 山西大学 | Asymmetric multifunctional metamaterial polarization converter |
| CN112886367A (en) * | 2021-01-19 | 2021-06-01 | 之江实验室 | Terahertz optoelectronic oscillator and oscillation method |
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| CN111900552B (en) | 2022-01-18 |
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