CN111769344B - Terahertz band elimination filter - Google Patents
Terahertz band elimination filter Download PDFInfo
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- CN111769344B CN111769344B CN202010676148.2A CN202010676148A CN111769344B CN 111769344 B CN111769344 B CN 111769344B CN 202010676148 A CN202010676148 A CN 202010676148A CN 111769344 B CN111769344 B CN 111769344B
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- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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- H01P1/20—Frequency-selective devices, e.g. filters
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Abstract
The invention discloses a terahertz band elimination filter which comprises NxN same units, wherein the same units are periodically arranged on a plane vertical to the incident direction of terahertz waves, no interval exists between adjacent units, N is an integer greater than or equal to 2, and each unit comprises a first metal resonance layer, a second metal resonance layer and a substrate; the first metal resonance layer is attached to the center of the upper surface of the substrate, and the second metal resonance layer is attached to the center of the lower surface of the substrate; the first metal resonance layer and the second metal resonance layer are both cross-shaped and have the same size; upon incidence of the wave, electromagnetic resonance is generated on the first metal resonance layer and the second metal resonance layer, and electromagnetic energy at the resonance frequency is used for maintaining electronic oscillation, thereby forming a filter stop band. The terahertz band-stop filter has the advantages of rapid attenuation of a stop band, small and large-scale adjustment of bandwidth, simple and easy structure, low cost and the like, and simplifies the structure of the terahertz band-stop filter.
Description
Technical Field
The invention relates to the field of terahertz functional devices and the technical field of electromagnetic filtering, in particular to a terahertz band elimination filter.
Background
The terahertz wave is an electromagnetic wave with the frequency within the range of 0.1-10THz, and has the excellent characteristics of large bandwidth, low energy, no destructive effect on substances, good penetrability and the like. Currently, terahertz technology is widely applied in the fields of imaging, communication, biomedicine and the like.
Besides a terahertz source and a detector, a complete terahertz system also needs various functional devices such as a modulator, a filter, an absorber and the like to regulate and control waves. The filter is used for frequency selection, namely, the filter transmits specific waves and blocks waves except the specific frequencies. The existing terahertz filter is mainly based on structures such as a slab dielectric waveguide and a photonic crystal, has the defects of slow attenuation, complex structure and difficulty in processing, and is difficult to realize micro-adjustment and large-scale adjustment of bandwidth simultaneously by the same filter.
Based on the above problems, how to design a terahertz filter which has a simple structure, a wide bandwidth adjustment range, a steep insertion loss curve and is easy to manufacture becomes a problem which needs to be solved urgently in the field.
Disclosure of Invention
The terahertz band elimination filter is simple in structure, the bandwidth can be adjusted slightly and also adjusted greatly, the insertion loss curve is steep, and the terahertz band elimination filter is easy to manufacture.
In order to achieve the above object, the present invention provides a terahertz band elimination filter, which includes N × N identical units, which are periodically arranged on a plane perpendicular to an incident direction of a terahertz wave, where there is no space between adjacent units, and N is an integer greater than or equal to 2.
The single unit includes: the resonator comprises a first metal resonance layer, a second metal resonance layer and a substrate; the first metal resonance layer includes: a first metal strip, a second metal strip; the first metal strip and the second metal strip are vertically crossed to form a cross shape and are attached to the center of the upper surface of the substrate, and the first metal strip and the second metal strip are respectively parallel to two vertical edges of the upper surface of the unit substrate; the second metal resonance layer includes: the third metal strip and the fourth metal strip are vertically crossed to form a cross and are attached to the center of the lower surface of the substrate, and the third metal strip and the fourth metal strip are respectively superposed with two diagonal lines of the lower surface of the unit substrate; the first metal strip, the second metal strip, the third metal strip and the fourth metal strip are equal in size.
The thickness of the first metal resonance layer ranges from 0.1um to 0.2 um;
the thickness of the second metal resonance layer ranges from 0.1um to 0.2 um;
the thickness of the substrate ranges from 40um to 60 um;
the first metal resonance layer is of a vertically symmetrical and horizontally symmetrical cross-shaped structure, and the second metal resonance layer is of a vertically symmetrical and horizontally symmetrical cross-shaped structure;
the length range of each metal strip is 120-130 um; the width of each metal strip ranges from 8um to 50 um;
the side length range of the single unit is 140-;
the metal layer is made of aluminum or copper, and the substrate is made of a cyclic olefin polymer film;
the terahertz band elimination filter has a strong inhibiting effect on electromagnetic waves near 1THz, and the filter can realize large-range adjustment near 1THz by adjusting the rotation angle and the line width of the second metal resonance layer.
The invention has the beneficial effects that:
1. according to the terahertz band-stop filter, the reflection zero point is introduced through the specific structure, the slope of an insertion loss curve is increased, and the filtering performance is good.
2. The terahertz band elimination filter has the characteristic that the bandwidth can be finely adjusted and also can be greatly adjusted, the fine adjustment of the bandwidth can be realized by changing the included angle between the first metal resonance layer and the second metal resonance layer, the large-range adjustment of the bandwidth can be realized by changing the line width of the cross of the metal resonance layer, and the adjustment can be realized by carrying out secondary processing on the filter.
3. The filter has the advantages of simple structure, convenient manufacture and low cost.
4. The cycloolefin polymer film used by the filter has flexibility and wide application range.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 is a schematic structural diagram of a single unit of a terahertz band-stop filter according to an embodiment of the invention;
FIG. 2 is a schematic structural diagram of a 4 × 4 cell array according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a first metal resonant layer according to an embodiment of the invention;
FIG. 4 is a diagram illustrating a second metal resonant layer according to an embodiment of the present invention;
FIG. 5 is a dimension diagram of a metal resonant layer according to an embodiment of the present invention;
fig. 6 is a graph showing a variation in filtering performance of the second metal resonant layer rotating clockwise by a certain angle according to the embodiment of the present invention;
fig. 7 is a graph illustrating the variation of the filtering performance of the metal resonant layer according to the embodiment of the present invention.
The reflection zero point comprises a first metal resonance layer 1, a second metal resonance layer 2, a substrate 3, a first metal strip 4, a first metal strip 5, a second metal strip 6, a third metal strip 7, a fourth metal strip 8 and a reflection zero point.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terahertz band elimination filter is simple in structure, wide in insertion loss curve and easy to manufacture, and the bandwidth can be adjusted finely and largely.
The invention provides a terahertz band elimination filter, which comprises N multiplied by N identical units, wherein the N multiplied by N identical units are periodically arranged on a plane vertical to the incident direction of terahertz waves, no space exists between adjacent units, N is an integer greater than or equal to 2, and in the embodiment, N is 4, as shown in fig. 2.
As shown in fig. 1, the single unit includes a first metal resonance layer 1, a second metal resonance layer 2, and a substrate 3. Terahertz waves can be filtered through the first metal resonance layer 1, the substrate 3 and the second metal resonance layer 2 in sequence, and filtering signals are obtained.
As shown in fig. 3, the first metal resonance layer 1 includes: a first metal strip 4, a second metal strip 5; the first metal strip 4 and the second metal strip 5 are vertically crossed to form a cross shape and are attached to the center of the upper surface of the substrate, and the first metal strip 4 and the second metal strip 5 are respectively parallel to two vertical edges of the upper surface of the unit substrate; as shown in fig. 4, the second metal resonance layer 2 includes: the third metal strip 6, the fourth metal strip 7, the third metal strip 6 and the fourth metal strip 7 are perpendicularly crossed to form a cross and are attached to the center of the lower surface of the substrate, the third metal strip 6 and the fourth metal strip 7 are respectively superposed with two diagonal lines of the lower surface of the unit substrate, and the first metal strip, the second metal strip, the third metal strip and the fourth metal strip are equal in size.
As shown in fig. 5, the cross length L of the first metal resonance layer 1 and the second metal resonance layer 2 in this embodiment is 130um, and the cross line width W of the first metal resonance layer 1 and the second metal resonance layer 2 is 8 um.
The thickness of the substrate 3 in this embodiment is 40 um.
The thickness of the first metal resonance layer 1 and the second metal resonance layer 2 in this embodiment is 0.1 um.
The side length of the single cell in this embodiment is 140 um.
In this embodiment, the first metal resonance layer 1 and the second metal resonance layer 2 are made of copper.
In this embodiment, the substrate is a cyclic olefin polymer film.
Fig. 6 is a graph of a filter performance variation when the second metal resonance layer 2 rotates clockwise by a certain angle, a single variable is an angle of the second metal resonance layer 2 rotating clockwise, the rotation is 45 degrees, that is, the third metal strip 6 is horizontal, when the fourth metal strip 7 is vertical, the relative bandwidth is 35%, when the rotation is 30 degrees, the relative bandwidth is 36%, when the rotation is 15 degrees, the relative bandwidth is 37%, and when the original state is maintained and no rotation is performed, that is, when the third metal strip 6 and the fourth metal strip 7 coincide with a diagonal line, the relative bandwidth is 38%, so that the fine tuning of the bandwidth of the filter is realized; fig. 7 is that metal resonance layer linewidth W takes filter performance change curve graph under the 8um, 20um, 35um, 50um condition respectively, and single variable is metal resonance layer linewidth W, and relative bandwidth is increased gradually to 70% when W is 50um by 38% when W is 8um, has realized adjusting on a large scale of filter bandwidth, and above-mentioned regulation only needs can realize to the filter secondary operation.
The principles and embodiments of the present invention have been explained herein using specific embodiments, which are merely used to help understand the method and its core ideas of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (1)
1. A terahertz band elimination filter is characterized by comprising N multiplied by N identical units which are periodically arranged on a plane vertical to the incident direction of terahertz waves, wherein the adjacent units have no spacing, and N is an integer greater than or equal to 2;
the single said unit comprises: the first metal resonance layer, the second metal resonance layer and the substrate; the first metal resonance layer includes: a first metal strip, a second metal strip; the first metal strip and the second metal strip are vertically crossed to form a cross shape and are attached to the center of the upper surface of the substrate, and the first metal strip and the second metal strip are respectively parallel to two vertical edges of the upper surface of the unit substrate; the second metal resonance layer includes: the third metal strip and the fourth metal strip are vertically crossed to form a cross and are attached to the center of the lower surface of the substrate, the third metal strip and the fourth metal strip are respectively superposed with two diagonal lines of the lower surface of the unit substrate, and the first metal strip, the second metal strip, the third metal strip and the fourth metal strip are equal in size;
the thickness of the first metal resonance layer ranges from 0.1um to 0.2 um;
the thickness of the second metal resonance layer ranges from 0.1um to 0.2 um;
the thickness of the substrate ranges from 40um to 60 um;
the first metal resonance layer is of a vertically symmetrical and horizontally symmetrical cross-shaped structure, and the second metal resonance layer is of a vertically symmetrical and horizontally symmetrical cross-shaped structure;
the length range of each metal strip is 120-130 um; the width of each metal strip ranges from 8um to 50 um;
the side length range of the single unit is 140-;
the metal resonance layers are made of aluminum or copper, and the substrate is made of a cyclic olefin polymer film;
the terahertz band elimination filter has a strong inhibiting effect on electromagnetic waves near 1THz, and the filter can realize large-range adjustment near 1THz by adjusting the rotation angle and the line width of the second metal resonance layer.
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| CN202010676148.2A CN111769344B (en) | 2020-07-14 | 2020-07-14 | Terahertz band elimination filter |
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| CN202010676148.2A CN111769344B (en) | 2020-07-14 | 2020-07-14 | Terahertz band elimination filter |
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| CN111769344A CN111769344A (en) | 2020-10-13 |
| CN111769344B true CN111769344B (en) | 2022-02-22 |
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| CN215119253U (en) * | 2021-03-22 | 2021-12-10 | 京东方科技集团股份有限公司 | Filtering structure |
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| CN103454784A (en) * | 2013-09-23 | 2013-12-18 | 哈尔滨工程大学 | TeraHertz wave tunable optical control switch based on artificial electromagnetic materials |
| CN205488429U (en) * | 2015-12-31 | 2016-08-17 | 深圳光启高等理工研究院 | Filtering structure and wave filter |
| CN205752461U (en) * | 2016-04-29 | 2016-11-30 | 中国人民解放军理工大学 | A kind of monolayer Double-frequency band elimination frequency-selective surfaces |
| CN108376817A (en) * | 2018-02-06 | 2018-08-07 | 雄安华讯方舟科技有限公司 | Terahertz bandstop filter unit based on Meta Materials and Terahertz bandstop filter |
| CN109585985A (en) * | 2018-11-23 | 2019-04-05 | 中国计量大学 | Concentric squares divide the terahertz filter of shape engraved structure |
| CN210864101U (en) * | 2019-11-12 | 2020-06-26 | 广州铁路职业技术学院（广州铁路机械学校） | High-frequency polarization signal conversion device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8958050B2 (en) * | 2011-11-17 | 2015-02-17 | Samsung Electronics Co., Ltd. | Tunable terahertz metamaterial filter |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103454784A (en) * | 2013-09-23 | 2013-12-18 | 哈尔滨工程大学 | TeraHertz wave tunable optical control switch based on artificial electromagnetic materials |
| CN205488429U (en) * | 2015-12-31 | 2016-08-17 | 深圳光启高等理工研究院 | Filtering structure and wave filter |
| CN205752461U (en) * | 2016-04-29 | 2016-11-30 | 中国人民解放军理工大学 | A kind of monolayer Double-frequency band elimination frequency-selective surfaces |
| CN108376817A (en) * | 2018-02-06 | 2018-08-07 | 雄安华讯方舟科技有限公司 | Terahertz bandstop filter unit based on Meta Materials and Terahertz bandstop filter |
| CN109585985A (en) * | 2018-11-23 | 2019-04-05 | 中国计量大学 | Concentric squares divide the terahertz filter of shape engraved structure |
| CN210864101U (en) * | 2019-11-12 | 2020-06-26 | 广州铁路职业技术学院（广州铁路机械学校） | High-frequency polarization signal conversion device |
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