CN205752461U - A kind of monolayer Double-frequency band elimination frequency-selective surfaces - Google Patents
A kind of monolayer Double-frequency band elimination frequency-selective surfaces Download PDFInfo
- Publication number
- CN205752461U CN205752461U CN201620377276.6U CN201620377276U CN205752461U CN 205752461 U CN205752461 U CN 205752461U CN 201620377276 U CN201620377276 U CN 201620377276U CN 205752461 U CN205752461 U CN 205752461U
- Authority
- CN
- China
- Prior art keywords
- frequency
- subresonator
- cross dipole
- selective surfaces
- patch resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
This utility model provides a kind of monolayer Double-frequency band elimination frequency-selective surfaces, loads including Rectangular Enclosure with Participating Media substrate, side's ring patch resonator, cross dipole subresonator and four copper cash；Side's ring patch resonator is arranged on the upper face of medium substrate, and the edge of side's ring patch resonator is parallel with the edge of Rectangular Enclosure with Participating Media substrate respectively；Cross dipole subresonator is arranged on the upper face of medium substrate, and on two diagonal of four side of being positioned at of branch, tunnel ring patch resonator of cross dipole subresonator；Four copper cash load and run through Rectangular Enclosure with Participating Media substrate, and are connected with four ending vertical of cross dipole subresonator respectively.Coupling between this monolayer Double-frequency band elimination frequency-selective surfaces simple in construction, frequency-adjustable, multi-resonant unit is little and has relatively low high-frequency resonant frequency.
Description
Technical field
This utility model relates to a kind of frequency-selective surfaces, especially a kind of monolayer Double-frequency band elimination frequency-selective surfaces.
Background technology
Frequency-selective surfaces is widely used in antenna house, microwave wave-absorber, antenna reflector and electromagnetic shielding.Typical frequency-selective surfaces is that the spatial band with periodic structure is led to or band elimination filter, and traditional frequency-selective surfaces is mainly single-frequency response.Along with the fast development of Modern Communication System, design has the frequency-selective surfaces of multi-frequency Characteristic, to avoid the mutual interference of adjacent communication equipment to become study hotspot.Multi-resonant unit, as donut or Fang Huanke realize relatively independent frequency response, for the design of multifrequency frequency-selective surfaces.Existing many scholars have made correlational study, and such as multilamellar or three dimensional structure, fractal structure, multi-resonant unit, disresonance sub-wavelength miniaturization structure etc., but multilamellar makes its structure become complicated, and sensitivity to parameter strengthens simultaneously, and requirement on machining accuracy improves.
In prior art, J. Yang proposes accurate equivalent circuit (EC) model analyzing side's ring resonant frequency selection surface with one heart, but resistor loaded makes processing difficulties；Ghaffer I. Kiani devises the frequency-selective surfaces that angle of inclination is incident that is adapted to of novel structure, but the pattern of double-deck superposition makes structure complicated；Yi-Min Yu proposes the miniaturization frequency-selective surfaces loaded based on copper cash, but this structure is only single-frequency characteristic.
Summary of the invention
The purpose of this utility model is the monolayer Double-frequency band elimination frequency-selective surfaces providing a kind of simple in construction, processing easy.
In order to solve above-mentioned technical problem, this utility model provides a kind of monolayer Double-frequency band elimination frequency-selective surfaces, loads including Rectangular Enclosure with Participating Media substrate, side's ring patch resonator, cross dipole subresonator and four copper cash；Side's ring patch resonator is arranged on the upper face of medium substrate, and the edge of side's ring patch resonator is parallel with the edge of Rectangular Enclosure with Participating Media substrate respectively；Cross dipole subresonator is arranged on the upper face of medium substrate, and on two diagonal of four side of being positioned at of branch, tunnel ring patch resonator of cross dipole subresonator；Four copper cash load and run through Rectangular Enclosure with Participating Media substrate, and are connected with four ending vertical of cross dipole subresonator respectively.
Employing side's ring patch resonator produces resonance, simple in construction, frequency-adjustable at low frequency (WLAN, 5GHz), and has reserved locus for multi-resonant unit, can reduce the coupling between unit；Using the crossed dipoles in the side's of being positioned at ring patch resonator ring to produce resonance at high frequency, crossed dipoles slant setting, to increase its length, reduces resonant frequency；Use and copper cash loading is set in crossed dipoles end, thus add dipole equivalent capacity and inductance, and reduce high-frequency resonant frequency (X-band, 10GHz) further.
As further restriction scheme of the present utility model, the ring hem width degree of side's ring patch resonator is 0.4 ~ 0.5mm, and the spacing of ring limit and Rectangular Enclosure with Participating Media substrate edges is 0.25mm.When reducing along with the spacing of the increase of side's ring patch size, i.e. ring limit with Rectangular Enclosure with Participating Media substrate edges, corresponding equivalent capacity and inductance can increase, and first resonant frequency is toward low frequency offset, and the resonance effect of meeting slightly affected second band resistance.The ring hem width of side's ring patch resonator is less on two resonant frequency impacts in the case of conversion is little.
As further restriction scheme of the present utility model, branch's width of cross dipole subresonator is 0.3 ~ 0.5mm, and the two-way branch overall length being positioned on same diagonal is 6 ~ 8mm.Use the cross dipole subresonator that branch's width is 0.3 ~ 0.5mm and two-way branch overall length is 6 ~ 8mm can produce resonance at low frequency (5GHz).
As further restriction scheme of the present utility model, radius and height that copper cash loads are respectively 0.25mm and 1.6mm.Using radius and height to be respectively the loading of 0.25mm and 1.6mm copper cash makes crossed dipoles resonator have preferable equivalent inductance and electric capacity, to reduce the resonant frequency of dipole further.
The beneficial effects of the utility model are: (1) employing side ring patch resonator produces resonance, simple in construction, frequency-adjustable at low frequency (WLAN, 5GHz), and has reserved locus for multi-resonant unit, can reduce the coupling between unit；(2) using the crossed dipoles in the side's of being positioned at ring patch resonator ring to produce resonance at high frequency, crossed dipoles slant setting, to increase its length, reduces resonant frequency；(3) use and copper cash loading is set in crossed dipoles end, thus add dipole equivalent capacity and inductance, and reduce high-frequency resonant frequency (X-band, 10GHz) further.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model；
Fig. 2 is data Propagation Simulation result figure of the present utility model；
Fig. 3 is 5GHz simulated electric field of the present utility model；
Fig. 4 is 10GHz simulated electric field of the present utility model；
Fig. 5 is that 5GHz of the present utility model emulates magnetic field；
Fig. 6 is that 10GHz of the present utility model emulates magnetic field；
Fig. 7 is equivalent-circuit model of the present utility model；
Fig. 8 is that artificial transmission coefficient of the present utility model is with crossed dipoles change in size curve；
Fig. 9 is TM wave polarization transmission coefficient simulation curve of the present utility model；
Figure 10 is TE wave polarization transmission coefficient simulation curve of the present utility model.
In figure: 1, Rectangular Enclosure with Participating Media substrate, 2, side's ring patch resonator, 3, cross dipole subresonator, 4, copper cash loads.
Detailed description of the invention
As it is shown in figure 1, monolayer Double-frequency band elimination frequency-selective surfaces of the present utility model includes: Rectangular Enclosure with Participating Media substrate 1, side's ring patch resonator 2, cross dipole subresonator 3 and four copper cash load 4.
Wherein, side's ring patch resonator 2 is arranged on the upper face of medium substrate 1, and the edge of side's ring patch resonator 2 is parallel with the edge of Rectangular Enclosure with Participating Media substrate 1 respectively；Cross dipole subresonator 3 is arranged on the upper face of medium substrate 1, and on two diagonal of four side of being positioned at of branch, tunnel ring patch resonator 2 of cross dipole subresonator 3；Four copper cash load 4 and run through Rectangular Enclosure with Participating Media substrate 1, and are connected with 3 four ending vertical of cross dipole subresonator respectively；The ring hem width degree of side's ring patch resonator 2 is 0.4 ~ 0.5mm, preferably 0.5mm, and the spacing at ring limit and Rectangular Enclosure with Participating Media substrate 1 edge is 0.25mm；Branch's width of cross dipole subresonator 3 is 0.3 ~ 0.5mm, preferably 0.4mm, and the two-way branch overall length being positioned on same diagonal is 6 ~ 8mm, preferably 7mm；Copper cash loads radius and height respectively 0.25mm and 1.6mm of 4；Rectangular Enclosure with Participating Media substrate 1 uses FR4, and height is 1.6mm, and relative dielectric constant isε r=4.4, loss angle tangent is tanδ=0.02；.
As in figure 2 it is shown, by transmission coefficient is emulated, it is thus achieved that the Double-frequency band elimination characteristic that frequency band is relatively wide.By the size of suitable adjustment side's ring patch resonator 2, the resistance of low frequency (5GHz) band can be realized.In order to reduce the cross dipole subresonator 3 resonant frequency at high frequency, four copper cash load 4 asymmetrical loads in the top of crossed dipoles, to increase equivalent capacity and inductance.It can be seen that the resonant frequency after Jia Zaiing is reduced to 10GHz by 14.5GHz.
As shown in Figures 3 and 4, for analyzing band-stop response further, figure gives this monolayer Double-frequency band elimination frequency-selective surfaces and hinders the electric field at mid frequency and Distribution of Magnetic Field at two bands.Wherein, the electric field of Fig. 3 is 5GHz, the left and right sides of the electric current side of being mainly distributed on ring patch resonator 2 in figure, consistent with the simulation result not having cross dipole subresonator 3 and copper cash loading 4.The electric field of Fig. 4 is 10GHz, and in figure, electric current is mainly gathered in copper cash loading 4, demonstrates and there is stronger coupling between adjacent copper loading 4.As it was previously stated, copper cash loads 4 equivalent inductance and the electric capacity adding cross dipole subresonator 3.
As it can be seen in figures 5 and 6, the magnetic field of Fig. 5 is 5GHz, the both sides up and down of the magnetic current side of being mainly distributed on ring patch resonator 2 in figure.The magnetic field of Fig. 6 is 10GHz, and in figure, magnetic current is mainly distributed on cross dipole subresonator 3.Theoretical according to transmission line model and equivalent circuit, above-mentioned design can produce stronger coupling near two resonant frequencies.
Full wave analysis is usually used in optimization frequency and selects the structural parameters on surface, and with the increase of the complexity of structure, index increases simulation time.Equivalent-circuit model can first predict the elementary structure parameter of frequency-selective surfaces, to improve simulation efficiency, and gives the physical interpretation of frequency-selective surfaces, it is simple to designer understands.Based on transmission theory, the equivalent circuit of frequency-selective surfaces of the present utility model can be by two groups of parallel LC resonance circuit equivalences, as shown in Figure 7.In figure, C1 and L1 represents equivalent capacity and the inductance of cross dipole subresonator 3 respectively, L2 and L3 is copper cash loading 4 and the equivalent inductance of cross dipole subresonator 3 respectively, C2 is defined as two closest copper cash and loads the mutual inductance between 4, and Z0 is the characteristic impedance of free space.The mid frequency of low-frequency band resistance is mainly caused by C1 and L1 resonance, and the mid frequency of high frequency band resistance is mainly caused by L2, L3 and C2 resonance.
As shown in Figure 8, by further Parameter analysis, it appeared that cross dipole subresonator 3 physical dimension has coupling to low frequency band-stop response.Along with the increase of dipole length, two resonance frequency bands are all toward low frequency offset, but dipole length is less on resonant frequency impact in the case of change is little.Therefore, between cross dipole subresonator 3 and side's ring patch resonator 2, coupling is certainly existed.
As shown in Figure 9 and Figure 10, this utility model frequency-selective surfaces different angles frequency response characteristic to TM and TE wave polarization, bandwidth of rejection is approximately 35% and 37% respectively relative to mid frequency 5GHz and 10GHz.For TM wave polarization, band-stop response is the most stable；For TE ripple, along with the increase of incident angle, the band-stop response of first is kept approximately constant.And second band suppressed frequency band is toward low frequency offset, and occurring in that secondary resonance at highband part, this is loaded crossed dipoles resonance mainly due to second band resistance by asymmetric top.
Claims (4)
1. a monolayer Double-frequency band elimination frequency-selective surfaces, it is characterised in that: include that Rectangular Enclosure with Participating Media substrate (1), side's ring patch resonator (2), cross dipole subresonator (3) and four copper cash load (4)；Side's ring patch resonator (2) is arranged on the upper face of medium substrate (1), and the edge of side's ring patch resonator (2) is parallel with the edge of Rectangular Enclosure with Participating Media substrate (1) respectively；Cross dipole subresonator (3) is arranged on the upper face of medium substrate (1), and on two diagonal of four sides of being positioned at of branch, tunnel ring patch resonator (2) of cross dipole subresonator (3)；Four copper cash load (4) and run through Rectangular Enclosure with Participating Media substrate (1), and are connected with (3) four ending vertical of cross dipole subresonator respectively.
Monolayer Double-frequency band elimination frequency-selective surfaces the most according to claim 1, it is characterised in that: the ring hem width degree of side's ring patch resonator (2) is 0.4 ~ 0.5mm, and the spacing at ring limit and Rectangular Enclosure with Participating Media substrate (1) edge is 0.25mm.
Monolayer Double-frequency band elimination frequency-selective surfaces the most according to claim 1 and 2, it is characterised in that: branch's width of cross dipole subresonator (3) is 0.3 ~ 0.5mm, and the two-way branch overall length being positioned on same diagonal is 6 ~ 8mm.
Monolayer Double-frequency band elimination frequency-selective surfaces the most according to claim 1 and 2, it is characterised in that: copper cash loads radius and height respectively 0.25mm and 1.6mm of (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620377276.6U CN205752461U (en) | 2016-04-29 | 2016-04-29 | A kind of monolayer Double-frequency band elimination frequency-selective surfaces |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620377276.6U CN205752461U (en) | 2016-04-29 | 2016-04-29 | A kind of monolayer Double-frequency band elimination frequency-selective surfaces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205752461U true CN205752461U (en) | 2016-11-30 |
Family
ID=57372736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620377276.6U Expired - Fee Related CN205752461U (en) | 2016-04-29 | 2016-04-29 | A kind of monolayer Double-frequency band elimination frequency-selective surfaces |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205752461U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876975A (en) * | 2017-03-03 | 2017-06-20 | 哈尔滨工业大学 | A kind of individual layer double frequency assembled unit and the frequency-selective surfaces containing the unit |
| CN108336503A (en) * | 2018-01-23 | 2018-07-27 | 中国计量大学 | A kind of graphene electricity tune THz wave absorber |
| CN111415812A (en) * | 2019-01-07 | 2020-07-14 | 台达电子企业管理（上海）有限公司 | Coupling inductor and power module |
| CN111769344A (en) * | 2020-07-14 | 2020-10-13 | 合肥工业大学 | Terahertz band elimination filter |
| US11676756B2 (en) | 2019-01-07 | 2023-06-13 | Delta Electronics (Shanghai) Co., Ltd. | Coupled inductor and power supply module |
| US11909311B2 (en) | 2017-05-05 | 2024-02-20 | Delta Electronics (Shanghai) Co., Ltd | Power converter, inductor element and control method of phase shedding |
-
2016
- 2016-04-29 CN CN201620377276.6U patent/CN205752461U/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876975A (en) * | 2017-03-03 | 2017-06-20 | 哈尔滨工业大学 | A kind of individual layer double frequency assembled unit and the frequency-selective surfaces containing the unit |
| US11909311B2 (en) | 2017-05-05 | 2024-02-20 | Delta Electronics (Shanghai) Co., Ltd | Power converter, inductor element and control method of phase shedding |
| CN108336503A (en) * | 2018-01-23 | 2018-07-27 | 中国计量大学 | A kind of graphene electricity tune THz wave absorber |
| CN108336503B (en) * | 2018-01-23 | 2020-10-16 | 中国计量大学 | Graphene electric-tuning terahertz wave absorber |
| CN111415812A (en) * | 2019-01-07 | 2020-07-14 | 台达电子企业管理（上海）有限公司 | Coupling inductor and power module |
| US11676756B2 (en) | 2019-01-07 | 2023-06-13 | Delta Electronics (Shanghai) Co., Ltd. | Coupled inductor and power supply module |
| CN111415812B (en) * | 2019-01-07 | 2023-11-10 | 台达电子企业管理（上海）有限公司 | Coupling inductance and power module |
| US11901113B2 (en) | 2019-01-07 | 2024-02-13 | Delta Electronics (Shanghai) Co., Ltd. | Inversely coupled inductor and power supply module |
| CN111769344A (en) * | 2020-07-14 | 2020-10-13 | 合肥工业大学 | Terahertz band elimination filter |
| CN111769344B (en) * | 2020-07-14 | 2022-02-22 | 合肥工业大学 | Terahertz band elimination filter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205752461U (en) | A kind of monolayer Double-frequency band elimination frequency-selective surfaces | |
| US9099784B2 (en) | Array antenna of mobile terminal and implementing method thereof | |
| CN107946762B (en) | X-waveband miniaturized high-wave-permeability FSS (frequency selective surface system) based on C-type interlayer radar cover wall structure | |
| CN109599657A (en) | It is a kind of based on antenna array and function divide feeding network integrated design towards 5G base-station antenna array and its design method | |
| TW201320467A (en) | Antenna isolation using metamaterial | |
| CN203760653U (en) | Small multiband electromagnetic band gap structure | |
| CN109193167B (en) | Miniaturized frequency selective surface with low ratio of high resonance point to low resonance point | |
| CN108281797B (en) | High angle stability frequency-selective surfaces based on 2.5D braiding structure | |
| CN105226355B (en) | High parasitic band suppression a quarter mould substrate integration wave-guide frequency-selective surfaces | |
| CN106654567B (en) | Capacitive and inductive surface coupling mechanism miniaturized high-performance high-frequency band communication radome | |
| CN106067583A (en) | A kind of frequency selective material method for designing of high out-of-side rejection degree based on aperture multiple structure | |
| CN212182533U (en) | Base station antenna and multiband base station antenna | |
| CN104681955A (en) | UWB (ultra wide band) antenna with dual resistance band function | |
| KR20130117226A (en) | Antenna using meta-material | |
| CN110504542A (en) | Load the wideband dual polarized high density high-isolation array antenna of compound isolator | |
| CN105789855A (en) | Novel double-band EBG structure | |
| CN115986425A (en) | Method for designing oblique incidence ultra-wideband wave-absorbing metamaterial based on characteristic mode theory | |
| Malekpoor | Comparative investigation of reflection and band gap properties of finite periodic wideband artificial magnetic conductor surfaces for microwave circuits applications in X‐band | |
| CN109103552B (en) | Loaded lumped element frequency selective surface | |
| CN107171042B (en) | Frequency selective surface structure | |
| KR101133343B1 (en) | Mimo(multi input multi output) antenna without phase variation | |
| CN104347939A (en) | MIMO (multi-input and multi-output) antenna system and radiation absorbing method | |
| CN108461912B (en) | Terahertz microstrip antenna | |
| CN114267958A (en) | Low-pass absorption type frequency selection structure with narrow transition band | |
| CN206412472U (en) | Capacitive, perceptual surface coupling mechanism miniaturisation high-performance high band communication antenna cover |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161130 Termination date: 20170429 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |