CN105226355B - High parasitic band suppression a quarter mould substrate integration wave-guide frequency-selective surfaces - Google Patents
High parasitic band suppression a quarter mould substrate integration wave-guide frequency-selective surfaces Download PDFInfo
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- CN105226355B CN105226355B CN201510547204.1A CN201510547204A CN105226355B CN 105226355 B CN105226355 B CN 105226355B CN 201510547204 A CN201510547204 A CN 201510547204A CN 105226355 B CN105226355 B CN 105226355B
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Abstract
The invention belongs to the technical field of frequency-selective surfaces; a kind of high parasitic band suppression a quarter mould substrate integration wave-guide frequency-selective surfaces are provided; under the premise of substrate integration wave-guide frequency-selective surfaces high selectivity is ensured, it is low to solve the problems, such as that prior art provides frequency-selective surfaces structure parasitic band suppression degree.The substrate integration wave-guide frequency-selective surfaces, including the first metal copper clad layers, dielectric layer, the second metal copper clad layers stacked gradually from top to bottom；There is identical size " L " type gap along etching edge in first, second metal copper clad layers, " L " the type gap is made up of short side and long side, and in the first metal copper clad layers the short side in " L " type gap and the long side in " L " type gap in the second metal copper clad layers it is corresponding open up, corresponding long side with short side is corresponding opens up.The present invention effectively improves the parasitic band suppression degree of frequency-selective surfaces structure under the premise of substrate integration wave-guide frequency-selective surfaces high selectivity is ensured.
Description
Technical field
The invention belongs to the technical field of frequency-selective surfaces, more particularly to a kind of high parasitic band suppression substrate integrates ripple
Setting frequency selects surface.
Background technology
Frequency-selective surfaces are a kind of spatial filters, the periodic array structure being made up of metal patch or gap.Base
In different unit forms, frequency-selective surfaces are widely used in microwave, millimeter wave and Terahertz frequency range, are such as used as reflecting surface day
Sub- reflecting surface and antenna house of line etc..Substrate integration wave-guide has low section, low-loss special compared with conventional microstrip and metal waveguide
Property；Frequency-selective surfaces based on substrate integrated waveguide technology have the advantages that high selectivity, bandwidth be easy to control, easy processing.
For example, document《Polarization rotating frequency selective surface based on
substrate integrated waveguide technology》(Simone A.Winkler,Wei Hong,Maurizio
Bozzi,and Ke Wu,“IEEE Transactions on Antennas and Propagation,vol.58,no.4,
Apr.2010. a kind of substrate integration wave-guide frequency-selective surfaces are proposed in), it includes one layer of dielectric layer and double layer of metal covers copper
Layer.Upper strata metal copper clad layers edge etch vertical clearance gap, lower metal copper clad layers edge etch horizontal gap, in middle dielectric layer
Substrate integration wave-guide resonator is formed using metallization VIA.Due to the needs of electric property, the cavity of the frequency-selective surfaces
It is operated in higher mode TM120/TM210, cavity size is bigger than normal, and Out-of-band rejection performance is bad.
A kind of substrate integration wave-guide frequency-selective surfaces are and for example proposed in Publication No. CN1825678A Chinese patent,
Substrate is the dielectric substrate with double-sided metal face, and upper and lower metal surface center etching is full symmetric on length and width both direction
" well " type gap.Centre frequency is 13.1GHz, is equally operated in cavity higher mode TM120, substrate thickness 1mm, parasitic passband
The frequency of occurrences is 1.52f0。
Publication No. CN101170207A Chinese patent discloses a kind of bi-pass band frequency selective surface, and the two of unit substrate
Face is coated with metal level, in the plated-through hole of two groups of different sizes squares of whole dielectric substrate arrangement, respective chamber
Upper and lower metal level center etch identical high frequency, low frequency square gap.Two passband central frequencies are respectively 9GHz, 11GHz,
It is operated in cavity higher mode TM120, substrate thickness 1mm, the parasitic passband frequency of occurrences is 1.15f0。
It can be found that although substrate integration wave-guide frequency-selective surfaces select surface phase with legacy frequencies from above-mentioned document
Than having advantage in performance, but cavity higher mode is all operated in, causes unit size larger, and the graing lobe frequency of occurrences and unit
Size is inversely proportional, therefore does not solve the problems, such as parasitic band suppression well, to realize frequency-selective surfaces high selection simultaneously
Characteristic and high parasitic band suppression degree difficulty are larger.
The content of the invention
It is an object of the invention to provide a kind of high parasitic band suppression a quarter mould substrate integration wave-guide frequency to select
Surface, under the premise of substrate integration wave-guide frequency-selective surfaces high selectivity is ensured, solve prior art and frequency selection table is provided
The problem of face structure parasitic band suppression degree is low.
To achieve the above object, the technical scheme is that：
High parasitic band suppression a quarter mould substrate integration wave-guide frequency-selective surfaces, it is characterised in that including from upper
The first metal copper clad layers, dielectric layer, the second metal copper clad layers down stacked gradually；First metal copper clad layers have along etching edge
" L " type gap, the second metal copper clad layers are etched with identical size " L " type gap in correspondence position, and " L " the type gap is by short side
Formed with long side, and in the first metal copper clad layers in the short side in " L " type gap and the second metal copper clad layers " L " type gap long side
Correspondingly open up, the long side in " L " type gap is corresponding with the short side in " L " type gap in the second metal copper clad layers in the first metal copper clad layers
Open up；On dielectric layer around " L " type gap set it is a series of run through plated through-hole, covered with the first metal copper clad layers and the second metal
Layers of copper collectively forms substrate integration wave-guide waveguide resonant cavity.
Further, the square arrangement of the plated through-hole, " L " the type gap are located at plated through-hole and surround square
Any one angle.
The long side and short side in " L " the type gap meet following relation：
A quarter mode resonant cavity cavity main mould TM0.5,0.5,0Resonant frequency：
Gap resonant frequency：
Wherein, sl1For bond length, sl2For long edge lengths, c0For the light velocity in vacuum, εrFor used medium dielectric constant.
Further, the width of the high parasitic band suppression a quarter mould substrate integration wave-guide frequency-selective surfaces of the present invention
Height is than being more than 10 times.
Illustrate from operation principle：Structure of the present invention is said for the cellular construction of integrated waveguide frequency-selective surfaces
Bright, the ratio of width to height (the ratio of width to height=element length/dielectric thickness) of the substrate integration wave-guide frequency-selective surfaces is more than 10 times, due to
Its very big the ratio of width to height, a quarter die cavity body are able to maintain that full die cavity body main mould electric field intensity map is constant, therefore edge (" L " type) stitches
Gap can be equivalent to a quarter die cavity body magnetic wall (main mould direction of an electric field is parallel with magnetic wall), and can encourage cavity main mould, cause
Unit small-sized；Moreover, twice close to the cavity length of side of the edge slot length, according to cavity resonant frequency and gap resonance frequency
Rate calculation formula, gap resonant frequency is close to cavity main mould TM0.5,0.5,0, so as to be used as another resonance point, in working frequency model
In enclosing, double frequency response is formed with cavity main mould, is effectively improved pass-band performance.By the length for suitably adjusting gap short side and long side
Degree, change the size of two kinds of mode of resonance coupling amounts, easily realize bandwidth control.
It is further to note that the high parasitic band suppression a quarter mould substrate integration wave-guide frequency selection table of the present invention
" L " gap in face is along edge in any one angle by plated through-hole in the square corner formed, the first metal
" L " gap is opened in same angle in copper clad layers and the second metal copper clad layers, open up position vertically correspond to it is overlapping.
Beneficial effects of the present invention：
The present invention makes full use of a quarter mould substrate integration wave-guide cavity configuration characteristic, makes working frequency humorous in cavity main mould
Shake a little, and realize that double frequency responds with gap resonance, compared to traditional structure, the present invention has following two outstanding advantages:
1st, substrate integration wave-guide frequency-selective surfaces of the present invention are operated in a quarter mould TM of cavity0.5,0.5,0, and cause
The resonant element is only 0.59 times of conventional elements length, because cell size and the frequency-selective surfaces graing lobe frequency of occurrences are into anti-
Than, therefore the present invention can substantially increase grating lobe suppression degree.
2nd, a quarter mode structure inhibits the non-rotationally-symmetric cavity higher mode in some fields, reduces parasitic passband
Number；So that the substrate integration wave-guide frequency-selective surfaces parasitic passband frequency of occurrences of the present invention is away from working frequency, it is the latter
1.74 times, that is, effectively improve the parasitic band suppression degree of existing substrate integration wave-guide frequency-selective surfaces.
Brief description of the drawings
Fig. 1 is substrate integration wave-guide frequency-selective surfaces three dimensional structure diagram of the present invention, wherein, 1 is that the first metal covers
Layers of copper, 2 be dielectric layer, 3 be the second metal copper clad layers.
Fig. 2 is substrate integration wave-guide frequency-selective surfaces superstructure figure of the present invention, wherein, 11 be the first metal copper clad layers
" L " type gap, 21 are through plated through-hole.
Fig. 3 is substrate integration wave-guide frequency-selective surfaces understructure figure of the present invention, wherein, 31 be the second metal copper clad layers
" L " type gap.
Fig. 4 is substrate integration wave-guide frequency-selective surfaces emulation S parameter result figure of the present invention.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.
High parasitic band suppression a quarter mould substrate integration wave-guide frequency-selective surfaces, its structure are provided in the present embodiment
As shown in figure 1, its upper strata, understructure are as shown in Figure 2 and Figure 3, the substrate integration wave-guide frequency-selective surfaces, including from upper past
Under stack gradually the first metal copper clad layers 1, dielectric layer 2, the second metal copper clad layers 3；Along etching edge in first metal copper clad layers 1
There is " L " type gap 11, form frequency-selective surfaces unit；There is " L " type gap 31 along etching edge in second metal copper clad layers 3,
It is vertical with " L " type gap 11 corresponding to open up；" L " type gap 11 is identical with 31 sizes of " L " type gap, by short side and long side structure
Into the short side (sl in " L " type gap 111) with the long side (sl in " L " type gap 312) vertically correspondingly open up, the length in " L " type gap 11
Side (sl2) with the short side (sl in " L " type gap 311) vertically correspondingly open up；A series of pass through is set around " L " type gap on dielectric layer
Plated through-hole 21 is worn, through the square arrangement of plated through-hole, with the first metal copper clad layers and the second common structure of metal copper clad layers
Into substrate integration wave-guide waveguide resonant cavity.
The specific design of the substrate integration wave-guide frequency-selective surfaces is completed for said structure, its centre frequency is
10GHz, electromagnetism full-wave simulation is carried out in HFSS to it；The dielectric layer 2 of selection is TLY-5, and dielectric constant 2.2, thickness is only
For 0.508mm, loss angle tangent 0.0009；First metal copper clad layers 1, the thickness of the second metal copper clad layers 2 are
0.018mm；The substrate integration wave-guide length of side is 8mm, and a diameter of 0.5mm in side wall hole 21, hole centre-to-centre spacing is 0.75mm；In copper clad layers
The two minor matters length in " L " the type gap 11 (31) of etching are respectively 6.3 (6.5) mm, 6.5 (6.3) mm, width 0.3mm, distance
Side wall hole center spacing is 0.45mm；Whole unit Cycle Length is 8mm.
Emulated, the results showed that：Gap resonant frequency is 9.88GHz, and cavity main mould resonant frequency is 10.03GHz, the
One parasitic passband is gap high-order mode resonance, frequency 17.38GHz, is 1.74 times of working frequency.
The foregoing is only a specific embodiment of the invention, any feature disclosed in this specification, except non-specifically
Narration, can alternative features equivalent by other or with similar purpose replaced；Disclosed all features or all sides
Method or during the step of, in addition to mutually exclusive feature and/or step, can be combined in any way.
Claims (3)
1. high parasitic band suppression a quarter mould substrate integration wave-guide frequency-selective surfaces, it is characterised in that including from upper past
Under the first metal copper clad layers, dielectric layer, the second metal copper clad layers that stack gradually；First metal copper clad layers have along etching edge
" L " type gap, the second metal copper clad layers are etched with identical size " L " type gap in correspondence position, and " L " the type gap is by short side
Formed with long side, and in the first metal copper clad layers in the short side in " L " type gap and the second metal copper clad layers " L " type gap long side
Correspondingly open up, the long side in " L " type gap is corresponding with the short side in " L " type gap in the second metal copper clad layers in the first metal copper clad layers
Open up；On dielectric layer around " L " type gap set it is a series of run through plated through-hole, covered with the first metal copper clad layers and the second metal
Layers of copper collectively forms substrate integration wave-guide waveguide resonant cavity；The long side and short side in " L " the type gap meet following relation：
A quarter mode resonant cavity cavity main mould TM0.5,0.5,0Resonant frequency：
Gap resonant frequency：
Wherein, sl1For bond length, sl2For long edge lengths, c0For the light velocity in vacuum, εrFor used medium dielectric constant.
2. the substrate integration wave-guide frequency-selective surfaces as described in claim 1, it is characterised in that the substrate integration wave-guide frequency
The ratio of width to height on surface is selected to be more than 10.
3. the substrate integration wave-guide frequency-selective surfaces as described in claim 1, it is characterised in that the plated through-hole is square
Arrangement, " L " the type gap are located at any one angle that plated through-hole surrounds square.
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799856B (en) * | 2017-10-19 | 2020-01-24 | 广东曼克维通信科技有限公司 | Substrate integrated waveguide tunable filter |
| CN109768358B (en) * | 2019-02-25 | 2020-08-18 | 广东曼克维通信科技有限公司 | Coupling folding substrate integrated waveguide filter |
| CN110137637A (en) * | 2019-04-24 | 2019-08-16 | 广东曼克维通信科技有限公司 | A kind of LTCC miniaturized substrate integrated waveguide filter |
| CN110233337A (en) * | 2019-05-22 | 2019-09-13 | 电子科技大学 | A kind of double frequency miniaturization cavity-backed radiator antenna design method |
| CN111430891B (en) * | 2020-03-13 | 2021-09-21 | 华南理工大学 | Broadband low-profile antenna based on polarization correlation super-surface structure |
| CN112952318B (en) * | 2021-01-29 | 2021-10-19 | 南京邮电大学 | Four-order cross coupling band-pass filter based on folded substrate integrated waveguide resonant cavity |
| CN114243276B (en) * | 2021-10-27 | 2022-10-28 | 北京邮电大学 | Novel self-duplex multi-band terahertz antenna |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170207A (en) * | 2007-11-12 | 2008-04-30 | 杭州电子科技大学 | Three-frequency bad high-performance frequency selection surface based on adjacent unit micro interference |
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2015
- 2015-08-31 CN CN201510547204.1A patent/CN105226355B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170207A (en) * | 2007-11-12 | 2008-04-30 | 杭州电子科技大学 | Three-frequency bad high-performance frequency selection surface based on adjacent unit micro interference |
Non-Patent Citations (3)
| Title |
|---|
| "Frequency-Tunable Compact Antenna Using Quarter-Mode Substrate Integrated Waveguide";Muhammad Usman Memon 等;《IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS》;20150819;第14卷;第1606-1609页 * |
| "Polarization Rotating Frequency Selective Surface Based on Substrate IntegratedWaveguide Technology";Simone A. Winkler 等;《IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION》;20100407;第58卷(第4期);第1202-1213页 * |
| "Size-Reduced Bandpass Filters using Quarter-Mode Substrate Integrated Waveguide Loaded with Different Defected Ground Structure Patterns";Yong Mao Huang 等;《2015 IEEE MTT-S International Microwave Symposium (IMS)》;20150522;全文 * |
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