CN108376817A - Terahertz bandstop filter unit based on Meta Materials and Terahertz bandstop filter - Google Patents
Terahertz bandstop filter unit based on Meta Materials and Terahertz bandstop filter Download PDFInfo
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- CN108376817A CN108376817A CN201810118598.2A CN201810118598A CN108376817A CN 108376817 A CN108376817 A CN 108376817A CN 201810118598 A CN201810118598 A CN 201810118598A CN 108376817 A CN108376817 A CN 108376817A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2005—Electromagnetic photonic bandgaps [EPB], or photonic bandgaps [PBG]
Abstract
The present invention relates to a kind of Terahertz bandstop filter unit based on Meta Materials, including the first resonator, first medium layer and the second resonator；First resonator, the first medium layer and second resonator are cascading；The first resonator Wei Swastika Huo Swastika font laminated structures, the second resonator Wei Swastika Huo Swastika font laminated structures；First resonator is identical as the structure of the second resonator, and the size of first resonator and second resonator is in scaling proportionate relationship.Prepared Terahertz bandstop filter unit is insensitive to the incident direction of the electromagnetic wave within the scope of Terahertz frequency range, can decay or the effect of reflexible Terahertz frequency range range to realize broad-angle-incident, while also function to widen.
Description
Technical field
The present invention relates to Terahertz Technology fields, more particularly to a kind of Terahertz bandstop filter list based on Meta Materials
Member and Terahertz bandstop filter.
Background technology
THz wave refer to frequency 0.1-10THz ranges, wavelength 30um-3mm ranges electromagnetic wave, in electromagnetic spectrum
In between microwave and infrared ray.THz wave have pulse signal-to-noise ratio height, high resolution, photon energy it is low and to polarity and
The unique electromagnetic properties such as nonpolar molecule absorption characteristic difference.Based on these electromagnetic properties, THz wave is in material molecule light
Spectrum analysis, material non-destructive testing, biological tissue's biopsy, high-precision secrecy radar, inter-satellite broadband connections etc. are ground
Unique advantage is presented in studying carefully.
The artificial electromagnetic material that Meta Materials are made of the sub-wavelength structure unit of periodic arrangement.With conventional nature material
It compares, Meta Materials have the special electromagnetic property such as negative refractive index and negative magnetic conductivity.By to metamaterial structure unit shape
The tuning to electromagnetic wave and control may be implemented in the control of shape size and material component, researcher.
In recent years, more and more for the research of the Terahertz function element based on metamaterial structure so as to Terahertz
The understanding and application of wave band are more and more.Currently, traditional bandstop filter based on Meta Materials can pass through most of frequencies
Component but the frequency component of certain ranges is decayed into extremely low level.But, it can be achieved that bandstop filter within the scope of Terahertz
Cellular construction it is more sensitive to the incident direction of electromagnetic wave, then limit its application in practice.
Invention content
Based on this, it is necessary to be directed to incident direction ratio of the cellular construction to electromagnetic wave of the bandstop filter based on Meta Materials
More sensitive problem provides a kind of Terahertz bandstop filter unit and Terahertz bandstop filter based on Meta Materials.
A kind of Terahertz bandstop filter unit based on Meta Materials, including the first resonator, first medium layer and second
Resonator；First resonator, the first medium layer and second resonator are cascading；First resonance
Qi Wei Swastika Huo Swastika font laminated structures, the second resonator Wei Swastika Huo Swastika font laminated structures；First resonator and institute
The structure for stating the second resonator is identical, and the size of first resonator and second resonator is in scaling proportionate relationship.
The scaling proportional region is 0.85 to 0.95 in one of the embodiments,.
The first medium is laminated on first resonator and second resonator layer by layer in one of the embodiments,
Between, first resonator side corresponding with second resonator is arranged in parallel.
In one of the embodiments, first resonator along its length on axis with second resonator
On projection, with second resonator along its length on axis it is Chong Die.
The Terahertz bandstop filter further includes second dielectric layer and third resonator in one of the embodiments,；
First resonator, the first medium layer, second resonator, the second dielectric layer and the third resonator according to
It is secondary to be stacked；First resonator along its length on axis and second resonator along its length on axis
With on the third resonator projection, with the third resonator along its length on axis it is Chong Die.
The second dielectric layer is laminated in second resonator and the third resonator in one of the embodiments,
Between, first resonator, second resonator side corresponding with the third resonator are arranged in parallel, and described
The center of one resonator, second resonator and the third resonator is point-blank.
The thickness of first resonator, second resonator and the third resonator in one of the embodiments,
Degree is between 0.4 micron to 0.6 micron.
In one of the embodiments, the first resonator Swastika font laminated structures include cross agent structure and
Four short linear type free end；The cross agent structure includes two cross one another long linear type structures, described two
Long linear type structure forms four connecting pins after intersecting, the four short linear type free end is with clockwise or counterclockwise
Direction corresponds and is connected on four connecting pins of the cross agent structure.
It is micro- to be in 98 for the length range of the long linear type structure of the cross agent structure in one of the embodiments,
For rice between 102 microns, the length range of the four short linear type free end is 38 microns to 42 microns；One word of the length
The width of shape structure is equal with the short width of linear type structure, and thickness is also equal.
Any one of a kind of Terahertz bandstop filter, including claim 1-9 right are wanted in one of the embodiments,
It is in M*N array arrangements to ask the Terahertz bandstop filter unit, the Terahertz bandstop filter unit, wherein M >=1,
N≥1。
The above-mentioned Terahertz bandstop filter unit based on Meta Materials, passes through the first resonator, first medium layer and second
Resonator is cascading, and the first resonator and the second resonator are set as the same Swastika or Swastika font laminated structures of phase,
The rotational symmetry of You Yu Swastika Huo Swastika font laminated structures so that prepared Terahertz bandstop filter unit is to Terahertz frequency
The incident direction of electromagnetic wave in segment limit is insensitive, to realize broad-angle-incident, while the first resonator and second humorous
The size for Qi Swastika Huo Swastika font laminated structures of shaking is in scaling relationship, and also functioning to widen can decay or reflexible Terahertz frequency range
The effect of range.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The attached drawing of other embodiment is obtained according to these attached drawings.
Fig. 1 is the structure chart for the Terahertz bandstop filter unit that an embodiment provides；
Fig. 2 is the first resonator or the second resonator in the Terahertz bandstop filter unit of Fig. 1 illustrated embodiments
One of embodiment structure chart；
Fig. 3 be Fig. 1 illustrated embodiments Terahertz bandstop filter unit in one of embodiment structure chart；
Fig. 4 is one of the Terahertz bandstop filter Dan Yuanzhong Swastika font laminated structures of Fig. 1 illustrated embodiments
The structural schematic diagram of embodiment；
Fig. 5 is one of the Terahertz bandstop filter Dan Yuanzhong Swastika font laminated structures of Fig. 1 illustrated embodiments
The structural schematic diagram of embodiment；
Fig. 6 is the structure chart of one of the Terahertz bandstop filter that an embodiment provides embodiment；
Fig. 7 is the incident angle schematic diagram of electromagnetic wave in the Terahertz bandstop filter that an embodiment provides；
Fig. 8 be embodiment illustrated in fig. 6 in Terahertz bandstop filter in electromagnetic wave incident obtained by transmission spectrum.
Specific implementation mode
To facilitate the understanding of the present invention, below with reference to relevant drawings to invention is more fully described.In attached drawing
Give presently preferred embodiments of the present invention.But the present invention can realize in many different forms, however it is not limited to this paper institutes
The embodiment of description.Keep the understanding to the disclosure more thorough on the contrary, purpose of providing these embodiments is
Comprehensively.
Unless otherwise defined, the skill of all of technologies and scientific terms used here by the article and the technical field for belonging to invention
The normally understood meaning of art personnel is identical.Description to be intended merely in the term used in the description of invention specific herein
The purpose of embodiment, it is not intended that the limitation present invention.Term as used herein "and/or" includes one or more relevant
Any and all combinations of Listed Items.
One embodiment provides a kind of Terahertz bandstop filter unit based on Meta Materials.The Terahertz bandreject filtering
On the one hand electromagnetic wave that device unit can reflect or decay within the scope of incident Terahertz frequency range so that the electromagnetic wave of other frequency ranges
Can it pass through；On the other hand it is insensitive to the incident direction of the electromagnetic wave within the scope of Terahertz frequency range, i.e., multi-angle incidence when, should
Terahertz resistance filter cell still keeps good to the reflection of the electromagnetic wave within the scope of Terahertz frequency range or transmission capacity
Stability.
Referring to FIG. 1, Terahertz bandstop filter unit includes the first resonator 100, first medium layer 200 and second
Resonator 300.Wherein, the material of the first resonator 100 and the second resonator 300 is metal material, which can be
The conductive metal such as gold, silver, copper, iron and aluminium.The material of first medium layer 200 is flexible dielectric material.The flexible media material
Material can be Kapton, can also be other dielectric constants and the similar flexible dielectric material of loss.The first medium
Layer 200 can be plate-like, but is not limited to plate, as long as the separation of the first resonator 100 and the second resonator 300 can be realized i.e.
It can.Preferably, first medium layer 200 is plate-like, and length and width is 150 microns, and thickness is 49 microns.Preferably,
The dielectric constant of one dielectric layer 200 is 3.5, loss tangent 0.0027, magnetic conductivity 1.
First resonator 100, first medium layer 200 and the second resonator 300 are cascading.In other words, first is situated between
Matter layer 200 is laminated between the first resonator 100 and the second resonator 300.
Referring to FIG. 2,100 Wei Swastika Huo Swastika font laminated structures of the first resonator, 300 Wei Swastika Huo Swastika fonts of the second resonator
Laminated structure.The wherein , Swastika Huo Swastika fonts can by chemical vapor deposition (Chemical Vapor Depos it ion,
CVD), physical vapor deposition (Phys ical Vapor Depos it ion, PVD) is formed in the upper and lower of first medium layer 200
Surface, to form the first resonator 100 and the second resonator 300 of Ju You Swastika Huo Swastika font laminated structures.Specifically, should
Swastika Huo Swastika font laminated structures include in the first metal strip and the second metal strip of two sections of bendings, the first metal strip and the second metal
Item includes the vertically extending extended segment of main paragraph and autonomous agent section both ends, and two extended segments being connect with same main paragraph
Extending direction is opposite.The main paragraph of the main paragraph of first metal strip and the second metal strip is in right-angled intersection, and four extended segments are prolonged
Direction is stretched successively to be in clockwise 90 degree of variations or change successively to be in counterclockwise 90 degree.
First resonator 100 is identical as the structure of the second resonator 300, the first resonator 100 and the second resonator 300
Size is in scaling proportionate relationship.Wherein, since the Swastika Huo Swastika fonts have rotational symmetry, while the first resonator 100 is the
The projection of two resonators, 300 upslide movie queen, the first resonator 100 are corresponding parallel with each side of the second resonator 300, are based on this institute
The first resonator 100 and the second resonator 300 of Ju You Swastika Huo Swastika font laminated structures obtained also have rotational symmetry, make
It obtains and preferable albedo or damping capacity is kept for the electromagnetic wave within the scope of the Terahertz of multi-angle incidence.In addition, the
The size of one resonator 100 and the second resonator 300 is in scaling relationship so as within the scope of incident Terahertz frequency range
The resonant frequency of electromagnetic wave reduces, to play the role of broadened bandwidth.
In conclusion the above-mentioned Terahertz bandstop filter unit based on Meta Materials, passes through the first resonator 100, first
Dielectric layer 200 and the second resonator 300 are cascading, and the first resonator 100 and the second resonator 300 are set as phase
Tong Swastika Huo Swastika font laminated structures, the rotational symmetry of You Yu Swastika Huo Swastika font laminated structures so that prepared Terahertz
Bandstop filter unit is insensitive to the incident direction of the electromagnetic wave within the scope of Terahertz frequency range, enters to realize wide angle
It penetrates, while the size of 300 Swastika Huo Swastika font laminated structures of the first resonator 100 and the second resonator is in scaling relationship, is also risen
It can decay or the effect of reflexible Terahertz frequency range range to widening.
In one embodiment, scaling proportional region is 0.85 to 0.95.Preferably, scaling ratio is 0.9.Specifically,
The area of one resonator 100 is more than the area of the second resonator 300, each between the first resonator 100 and the second resonator 300
The scaling ratio of corresponding sides is 0.9, i.e. the area of the second resonator 300 only has the 0.9 of the first resonator 100, the scaling ratio
Can widen can decay or the bandwidth of reflexible Terahertz frequency range range.
In one embodiment, with continued reference to FIG. 1, first medium layer 200 is laminated in the first resonator 100 and the second resonance
Between device 300, the first resonator 100 side corresponding with the second resonator 300 is arranged in parallel.That is, first medium layer
200 detach the first resonator 100 with the second resonator 300.Meanwhile 100 Swastika Huo Swastika font laminated structures of the first resonator
With the equal keeping parallelism relationship in each side corresponding to 300 Swastika Huo Swastika font laminated structures of the second resonator.
In one embodiment, the first resonator 100 along its length on axis with the throwing on the second resonator 300
Shadow, with the second resonator 300 along its length on axis it is Chong Die.Specifically, by the first resonator 100 along its length on
Axis projections on the second resonator 300, the projection and the second resonator 300 along its length on axis it is Chong Die, to make
The first resonator 100 is mutually parallel with 300 each corresponding sides of the second resonator, i.e., if the first resonator 100 is projected to the
On two resonators 300, then the first resonator 100 is overlapped with the center of the second resonator 300 and each corresponding sides are mutually parallel so that
First resonator 100 and the second resonator 300 are in rotational symmetry structure, and then make the Terahertz bandstop filter unit
It is insensitive to the incident direction of electromagnetic wave, can be in that multi-angle is incident.
In one embodiment, referring to FIG. 3, Terahertz bandstop filter further includes second dielectric layer 400 and third resonance
Device 500.First resonator 100, first medium layer 200, the second resonator 300, second dielectric layer 400 and third resonator 500
It is cascading.Third resonator 500 is identical as the structure of the first resonator 100 and the second resonator 300.
Specifically, the structure of Terahertz bandstop filter unit is five layers, is stacked from top to bottom, it is humorous to be followed successively by first
Shake device 100, first medium layer 200, the second resonator 300, second dielectric layer 400 and third resonator 500, and the first resonator
100, the second resonator 300 and third resonator 500 are Xiang Tong Swastika Huo Swastika font laminated structures.Five layers of the Terahertz band
Resistance filter cell can further widen can decay or reflexible Terahertz frequency range within the scope of electromagnetic wave.In addition, Terahertz
The structure of bandstop filter unit is not limited to three layers or five layers, can also be other numbers of plies, as long as can widen can for number of plies increase
Decaying or reflexible Terahertz frequency range range or insensitive to the incident direction of electromagnetic wave.
Further, third resonator 500 is identical with the structure of the first resonator 100, i.e. third resonator 500
There are Xiang Tong Swastika Huo Swastika font laminated structures, and each correspondence of the Swastika Huo Swastika font laminated structures with 100 Ju of the first resonator
The size on side is also identical.In addition, the size of the first resonator 100 and the size of the second resonator 300 are pressed in terms of length and width
Special ratios reduce, i.e., the area of the first resonator 100 is more than the area of the second resonator 300.The size of second resonator 300
The special ratios are also pressed with the size of third resonator 500 to reduce, and the area of the second resonator 300 is more than third resonator
500 area or the size of third resonator 500 and the size of the first resonator 100 or the second resonator 300 are consistent
It can also.
In one embodiment, second dielectric layer 400 is laminated between the second resonator 300 and third resonator 500, the
One resonator 100, the second resonator 300 side corresponding with third resonator 500 are arranged in parallel.First resonator 100 is along length
Spend the axis on direction and the second resonator 300 along its length on axis with 500 projection on third resonator, with the
Three resonators 500 along its length on axis overlapping.Specifically, the first resonator 100, first medium layer 200, the second resonance
Device 300, second dielectric layer 400 and third resonator 500 are cascading, and first medium layer 200 and second dielectric layer 400
Size can will be isolated between the first resonator 100, the second resonator 300 and third resonator 500.And first resonance
Device 100 along its length on axis and the second resonator 300 along its length on axis projections in third resonator 500
On, then the axis projections of the two are Chong Die with the axis of third resonator 500, so that it is guaranteed that the full extent to more incident electricity
Magnetic wave is decayed or is emitted.
In one embodiment, the first resonator 100, the second resonator 300 and third resonator 500 use metal material.
The metal material can be the conductive metal such as gold, silver, copper, iron and aluminium.
In one embodiment, the thickness of the first resonator 100, the second resonator 300 and third resonator 500 is in
Between 0.4 micron to 0.6 micron.Preferably, the thickness of the first resonator 100, the second resonator 300 and third resonator 500
Equal 0.5 micron.
In one embodiment, 100 Swastika Huo Swastika font laminated structures of the first resonator include cross agent structure and four
A short linear type free end.Cross agent structure includes two cross one another long linear type structures, two long linear type knot
Structure forms four connecting pins after intersecting, four short linear type free end is corresponded with direction clockwise or counterclockwise and supported
It is connected on four connecting pins of cross agent structure.Preferably, it please refers to Fig.2 and Fig. 4, two cross one another long linear types
Structure forms four connecting pins length and width after being mutually perpendicular in mutually orthogonal relationship, and two long linear type structure are equal.
Four short linear type free end corresponds in a clockwise direction to be connected on four connecting pins of cross agent structure.Its
In, four short linear type free end with its corresponding to four connecting pins of cross agent structure be mutually perpendicular to, and keep
Identical structure.In addition.First resonator, 100 Swastika fonts laminated structures also can be as shown in Figure 5.
In one embodiment, the length range of the long linear type structure of cross agent structure is micro- in 98 microns to 102
Between rice, the length range of four short linear type free end is between 38 microns to 42 microns.The width of long linear type structure
Equal with the short width of linear type structure, thickness is also equal.Preferably, with continued reference to FIG. 4, the length one of cross agent structure
The length L of character form structure1It is 100 microns, the length L of four short linear type free end2It is 40 microns, the width of long linear type structure
Spend W1With the width W of short linear type structure2It it is 13 microns, thickness is 0.5 micron.
One embodiment provides a kind of Terahertz bandstop filter, including above-mentioned Terahertz bandstop filter unit,
Terahertz bandstop filter unit is in M*N array arrangements, wherein M >=1, N >=1.Preferably, the Terahertz bandstop filter by
Terahertz bandstop filter unit periodic arrangement, forms the array structure of 6*6, as shown in Figure 6.
The design and optimization that Terahertz bandstop filter unit is carried out using 3 D electromagnetic simulation software, finally obtain performance
Excellent Terahertz bandstop filter.Specific Terahertz bandstop filter model of element parameter setting is as follows, referring to FIG. 4, a
=150 μm, L1=100 μm, W1=W2=13 μm, L2=40 μm, h1=0.5 μm (does not mark in figure, indicates the first resonator 100
With the thickness of the second resonator 300), h2=49 μm (not marked in figure, indicate the thickness of first medium layer 200), ε=3.5
(dielectric constant of first medium layer 200), δ=0.0027 tan (loss tangent of first medium layer 200), μ=1 (first
The magnetic conductivity of dielectric layer 200).The boundary condition of the Terahertz bandstop filter is periodic array arrangement.Meanwhile electromagnetic wave
Incident angle and the Terahertz bandstop filter are in three-dimensional perspective, using YZ planes as the plane of reference, and the angled α of Z axis center line, with
XZ planes are the plane of reference, and rotation angle is β about the z axis, and angle schematic diagram is as shown in Fig. 6.Referring to FIG. 7, being hindered for the Terahertz band
Transmission spectrum of the filter under (0 °~45 °) incidences of electromagnetic wave wide angle.It can be seen from the figure that with the increasing of incident angle
Greatly, which shows good stability in working band.Specifically, at angle [alpha]=0 °,
Centre frequency f0It is approximately equal to 0.57THz, within the scope of 0.54~0.61THz, the transmission coefficient of the Terahertz bandstop filter reaches
To -29dB, with the increase of incident angle α, red shift occurs for bandwidth, and transmission coefficient is on a declining curve, it is seen then that due to terahertz
The structure of the hereby rotational symmetry of resistance filter unit, this Terahertz bandstop filter is the insensitive structure that polarizes, and is further demonstrate,proved
This bright Terahertz band stop filter structure is applicable in Various Complex application scenarios.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of Terahertz bandstop filter unit based on Meta Materials, which is characterized in that including the first resonator, first medium
Layer and the second resonator；First resonator, the first medium layer and second resonator are cascading；It is described
First resonator Wei Swastika Huo Swastika font laminated structures, the second resonator Wei Swastika Huo Swastika font laminated structures；Described first is humorous
The device that shakes is identical as the structure of the second resonator, and the size of first resonator and second resonator is in scaling ratio
Relationship.
2. Terahertz bandstop filter unit according to claim 1, which is characterized in that the scaling proportional region is
0.85 to 0.95.
3. Terahertz bandstop filter unit according to claim 1, which is characterized in that the first medium is laminated on layer by layer
Between first resonator and second resonator, first resonator side corresponding with second resonator is flat
Row setting.
4. Terahertz bandstop filter unit according to claim 3, which is characterized in that first resonator is along length
Axis on direction on second resonator projection, with second resonator along its length on axis weight
It is folded.
5. Terahertz bandstop filter unit according to claim 1, which is characterized in that the Terahertz bandstop filter
Further include second dielectric layer and third resonator；First resonator, the first medium layer, second resonator, institute
It states second dielectric layer and the third resonator is cascading；First resonator along its length on axis and institute
State the second resonator along its length on axis on the third resonator projection, with the third resonator along long
Spend the axis overlapping on direction.
6. Terahertz bandstop filter unit according to claim 4, which is characterized in that the second dielectric layer is laminated in
Between second resonator and the third resonator, first resonator, second resonator and the third are humorous
The corresponding side of the device that shakes is arranged in parallel, and the center of first resonator, second resonator and the third resonator
Point-blank.
7. Terahertz bandstop filter unit according to claim 4, which is characterized in that first resonator, described
The thickness of second resonator and the third resonator is between 0.4 micron to 0.6 micron.
8. Terahertz bandstop filter unit according to claim 1, which is characterized in that the first resonator Swastika words
Shape laminated structure includes cross agent structure and four short linear type free end；The cross agent structure includes two phases
The long linear type structure mutually intersected, described two long linear type structures form four connecting pins after intersecting, described four short
Linear type free end corresponds four connections for being connected to the cross agent structure with direction clockwise or counterclockwise
On end.
9. Terahertz bandstop filter unit according to claim 1, which is characterized in that the cross agent structure
The length range of long linear type structure is between 98 microns to 102 microns, the length model of the four short linear type free end
Enclose is 38 microns to 42 microns；The width of the long linear type structure is equal with the short width of linear type structure, thickness
It is equal.
10. a kind of Terahertz bandstop filter, which is characterized in that described in any one of claim 1-9 claims
Terahertz bandstop filter unit, the Terahertz bandstop filter unit are in M*N array arrangements, wherein M >=1, N >=1.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810118598.2A CN108376817A (en) | 2018-02-06 | 2018-02-06 | Terahertz bandstop filter unit based on Meta Materials and Terahertz bandstop filter |
| PCT/CN2018/081336 WO2019153465A1 (en) | 2018-02-06 | 2018-03-30 | Terahertz band stop filter unit based on metamaterial and terahertz band stop filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810118598.2A CN108376817A (en) | 2018-02-06 | 2018-02-06 | Terahertz bandstop filter unit based on Meta Materials and Terahertz bandstop filter |
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| CN109167136A (en) * | 2018-08-23 | 2019-01-08 | 成都信息工程大学 | A kind of microstrip structure |
| CN109585984A (en) * | 2018-10-26 | 2019-04-05 | 中山大学 | A kind of Broadband bandstop filter of no RLC periodic structure |
| CN110011008A (en) * | 2019-03-31 | 2019-07-12 | 华南理工大学 | A kind of Terahertz Broadband bandstop filter based on super surface |
| CN110048201A (en) * | 2019-05-24 | 2019-07-23 | 中国计量大学上虞高等研究院有限公司 | Multiband Terahertz bandstop filter |
| CN110277616A (en) * | 2019-06-27 | 2019-09-24 | 南京理工大学 | Swastika type dual-pass band-pass filter is minimized based on vertical folding |
| CN110767964A (en) * | 2019-10-23 | 2020-02-07 | 南京航空航天大学 | Tunable terahertz band-stop filter |
| CN111585033A (en) * | 2020-05-25 | 2020-08-25 | 南通大学 | Near-zero refractive index metamaterial with double stop bands |
| CN111769345A (en) * | 2020-07-14 | 2020-10-13 | 合肥工业大学 | Terahertz metamaterial filter |
| CN111769344A (en) * | 2020-07-14 | 2020-10-13 | 合肥工业大学 | Terahertz band elimination filter |
| CN114324345A (en) * | 2021-11-01 | 2022-04-12 | 清华大学深圳国际研究生院 | Material imaging method and device, terminal equipment and storage medium |
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| CN106887710A (en) * | 2017-03-07 | 2017-06-23 | 西安电子科技大学 | Improve the frequency-selective surfaces structure of angle stability |
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| CN109167136A (en) * | 2018-08-23 | 2019-01-08 | 成都信息工程大学 | A kind of microstrip structure |
| CN109167136B (en) * | 2018-08-23 | 2021-04-06 | 成都信息工程大学 | Microstrip structure |
| CN109585984B (en) * | 2018-10-26 | 2020-04-03 | 中山大学 | Broadband band-stop filter without RLC periodic structure |
| CN109585984A (en) * | 2018-10-26 | 2019-04-05 | 中山大学 | A kind of Broadband bandstop filter of no RLC periodic structure |
| CN110011008A (en) * | 2019-03-31 | 2019-07-12 | 华南理工大学 | A kind of Terahertz Broadband bandstop filter based on super surface |
| CN110048201A (en) * | 2019-05-24 | 2019-07-23 | 中国计量大学上虞高等研究院有限公司 | Multiband Terahertz bandstop filter |
| CN110277616A (en) * | 2019-06-27 | 2019-09-24 | 南京理工大学 | Swastika type dual-pass band-pass filter is minimized based on vertical folding |
| CN110767964A (en) * | 2019-10-23 | 2020-02-07 | 南京航空航天大学 | Tunable terahertz band-stop filter |
| CN111585033A (en) * | 2020-05-25 | 2020-08-25 | 南通大学 | Near-zero refractive index metamaterial with double stop bands |
| CN111769345A (en) * | 2020-07-14 | 2020-10-13 | 合肥工业大学 | Terahertz metamaterial filter |
| CN111769344A (en) * | 2020-07-14 | 2020-10-13 | 合肥工业大学 | Terahertz band elimination filter |
| CN111769344B (en) * | 2020-07-14 | 2022-02-22 | 合肥工业大学 | Terahertz band elimination filter |
| CN114324345A (en) * | 2021-11-01 | 2022-04-12 | 清华大学深圳国际研究生院 | Material imaging method and device, terminal equipment and storage medium |
| CN114324345B (en) * | 2021-11-01 | 2024-01-12 | 清华大学深圳国际研究生院 | Material imaging method and device, terminal equipment and storage medium |
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