CN105048028B - A kind of terahertz filter and preparation method thereof - Google Patents
A kind of terahertz filter and preparation method thereof Download PDFInfo
- Publication number
- CN105048028B CN105048028B CN201510439332.4A CN201510439332A CN105048028B CN 105048028 B CN105048028 B CN 105048028B CN 201510439332 A CN201510439332 A CN 201510439332A CN 105048028 B CN105048028 B CN 105048028B
- Authority
- CN
- China
- Prior art keywords
- layer
- polymeric material
- photoresist
- metal
- laminated structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Laminated Bodies (AREA)
Abstract
The embodiment of the invention provides a kind of terahertz filters and preparation method thereof.It include: polymeric material layer and metal layer；The metal layer includes laminated structure, and the laminated structure includes horizontal stripe and taeniae；The laminated structure periodic distribution is in the polymeric material layer.Through the embodiment of the present invention, the filter range of filter is expanded, and is relatively beneficial to terahertz filter applied in other systems.
Description
Technical field
The present invention relates to electromagnetic wave filtration arts more particularly to a kind of terahertz filter and preparation method thereof.
Background technique
Terahertz (THz) wave refers to electromagnetic wave of the frequency between 0.1~10THz (30 μm~3mm of corresponding wavelength), between
Between visible light and microwave.THz wave has the unique physical characteristics such as transient state, low energy, strong penetrability, is allowed in width
The band fields such as communication, image objects, environmental monitoring, medical diagnosis, safety inspection have wide practical use.In practical application
In, the electromagnetic wave and noise for filtering out unwanted frequency range are generally required, to inhibit ambient noise, improves THz wave
Performance.In order to solve this problem, the filtering to electromagnetic wave is realized generally by terahertz filter.
The prior art provides a kind of adjustable THz wave bandstop filter based on Meta Materials artificial structure, the filter
Array is formed including several duplicate sub-wavelength resonance structures, and each resonance structure is by printable opening a pair of
Mouthful contrary molten be combined together of metal U-shaped structure and formed.By change that the two fused structures mutually cover away from
From, it can be achieved that stopband electromagnetic property linear frequency adjustability, the stopband of the bandstop filter is between 0.5-1.0THz.
But the filter filtering range is still relatively narrow, scalability is not strong, it is difficult to be applied to actual Terahertz system
In, so urgent those skilled in the art are that how to expand the filter range of filter the technical issues of solution, to increase
Terahertz filter is applied to the possibility in system.
Summary of the invention
The embodiment provides a kind of terahertz filter, the filter range of filter is expanded, and is increased too
Hertz filter is applied to the possibility in system.
To achieve the goals above, this invention takes following technical solutions.
A kind of terahertz filter, comprising: polymeric material layer and metal layer；The metal layer includes laminated structure, institute
Stating laminated structure includes horizontal stripe and taeniae；The laminated structure periodic distribution is in the polymeric material layer.
Preferably, the polymeric material layer is flexible polymeric material.
Preferably, the flexible polymeric material includes: Parylene, polymethyl methacrylate or polydimethylsiloxanes
Alkane.
Preferably, the metal layer is multilayer, filling flexible polymeric material between the metal layer.
Preferably, the metal layer is two layers or three layers, and the distance between described adjacent metal is 1nm~100 μm.
Preferably, the laminated structure for belonging to same layer is identical；The laminated structure with a thickness of 1nm~100 μm；Institute
The length for stating horizontal stripe is 1nm~1000 μm；The length of the taeniae is 1nm~1000 μm.
Preferably, the laminated structure is I type, II type or III type.
A kind of production method of terahertz filter, comprising:
Using double throwing silicon wafers as support substrate piece, by thermal oxidation process, in one layer of dioxy of the substrate slice Surface Creation
SiClx insulating medium layer；
First layer polymeric material is formed in double silicon chip surface precipitating flexible polymer materials of throwing；
Using the first layer polymeric material as the first substrate, cleaning, and smear photoresist；
The photoresist smeared on the first layer polymeric material, the light of developed removal exposure area are exposed using mask plate
Photoresist；
The first layer polymeric materials splash-proofing sputtering metal after exposure forms the first metal layer；
Removal photoresist is removed with acetone, the metal sputtered on the photoresist is removed together；
First layer polymeric materials precipitating flexible polymeric material after removing photoresist is as the second layers of polymer
Material, the first layer polymeric material and the second layer polymeric material form polymeric material layer.
Preferably, the first layer polymeric material thickness is 1 μm~200 μm；The first metal layer with a thickness of 1nm~
100μm。
Preferably, further includes:
Using the second layer polymeric material as the second substrate, cleaning, and smear photoresist；
It is exposed using the mask plate of laminated structure figure as described in claim 1 and is smeared on the second layer polymeric material
Photoresist, it is developed removal exposure area photoresist；
The second layer polymeric materials splash-proofing sputtering metal after exposure forms second metal layer, with a thickness of 1nm~100
μm；
Removal photoresist is removed with acetone, the metal sputtered on the photoresist is removed together；
Second layer polymeric materials precipitating flexible polymeric material after removing photoresist is as third layers of polymer
Material, the first layer polymeric material, the second layer polymeric material and third layer polymeric material form polymeric material layer；
And so on, until obtaining the terahertz filter with the metal layer for needing quantity.
As can be seen from the technical scheme provided by the above-mentioned embodiment of the present invention, the embodiment of the present invention is by setting metal layer
Slabbing structure is counted, and periodic distribution forms terahertz filter in the polymeric material layer made of flexible polymeric material, it can
Effectively to filter the THz wave of certain wavelength band, by the way that the size of laminated structure and each laminated structure is mutual
The distance between, the adjusting to resistance band or peak value may be implemented；The embodiment of the present invention can also be arranged as needed
At multilayered structure, a certain range of THz wave is filtered out with realizing, by adjusting the size of each lamellar structure, adjacent gold
Belong to the distance between layer, or even the laminated structure on different metal layer is arranged to different sizes, may be implemented to difference too
Hertz wave wave band filters out, wherein with the increase of laminated structure geometric dimension, the position of absorption peak is mobile to high frequency band；And
With the increase of interfloor distance, stop-band frequency is mobile to low-frequency band.
The additional aspect of the present invention and advantage will be set forth in part in the description, these will become from the following description
Obviously, or embodiment through the invention is recognized.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill of field, without any creative labor, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of terahertz filter structural schematic diagram that the embodiment of the present invention one provides；
Fig. 2 is a kind of terahertz filter laminated structure schematic diagram that the embodiment of the present invention one provides；
Fig. 3 is single layer polymeric material terahertz filter absorbance curves figure；
Fig. 4 is a kind of multilayer terahertz filter structural schematic diagram that the embodiment of the present invention one provides；
Fig. 5 is a kind of multilayer terahertz filter Structure of cross section schematic diagram that the embodiment of the present invention one provides；
Fig. 6 is a kind of multiple layer of polymeric material terahertz filter absorbance curves figure that the embodiment of the present invention one provides；
Fig. 7 is a kind of multiple layer of polymeric material terahertz filter process flow chart provided by Embodiment 2 of the present invention；
It include: polymeric material layer 110, metal layer 120, laminated structure 121, horizontal stripe 122, taeniae 123 in above-mentioned attached drawing；Branch
Support substrate slice 1, insulating medium layer 2, first layer polymeric material 111, photoresist 3, the first metal layer 4, second layer metal layer 5, the
Three-layer metal layer 6, the Terahertz wide-band filter 100 comprising three-layer metal layer 120.
Specific embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and for explaining only the invention, and is not construed as limiting the claims.
Those skilled in the art of the present technique are appreciated that unless expressly stated, singular " one " used herein, " one
It is a ", " described " and "the" may also comprise plural form.It is to be further understood that being arranged used in specification of the invention
Diction " comprising " refer to that there are the feature, integer, step, operation, element and/or component, but it is not excluded that in the presence of or addition
Other one or more features, integer, step, operation, element, component and/or their group.It should be understood that when we claim member
Part is " connected " or when " coupled " to another element, it can be directly connected or coupled to other elements, or there may also be
Intermediary element.In addition, " connection " used herein or " coupling " may include being wirelessly connected or coupling.Wording used herein
"and/or" includes one or more associated any cells for listing item and all combinations.
Those skilled in the art of the present technique are appreciated that unless otherwise defined, all terms used herein (including technology art
Language and scientific term) there is meaning identical with the general understanding of those of ordinary skill in fields of the present invention.Should also
Understand, those terms such as defined in the general dictionary, which should be understood that, to be had and the meaning in the context of the prior art
The consistent meaning of justice, and unless defined as here, it will not be explained in an idealized or overly formal meaning.
In order to facilitate understanding of embodiments of the present invention, it is done by taking several specific embodiments as an example below in conjunction with attached drawing further
Explanation, and each embodiment does not constitute the restriction to the embodiment of the present invention.
Embodiment one
This embodiment offers a kind of terahertz filters, and specific implementation structure is as shown in Figure 1, Figure 2, Figure 3, Figure 4, can
To include；
Polymeric material layer 110 and metal layer 120, wherein polymeric material layer be made of flexible polymeric material for example,
Parylene (Parylene), PMMA (Polymethylmethacrylate, polymethyl methacrylate), PDMS
Flexibilities such as (polydimethylsiloxane, dimethyl silicone polymers) and the excellent polymer material of translucency, such as Fig. 2 institute
Show, metal layer 120 is that laminated structure 121 includes horizontal stripe 122 and taeniae 123；Metal layer can be by resistivity such as copper, aluminium, silver
Low, good conductivity metal material is made；Laminated structure periodic distribution is in polymeric material layer 110.
The embodiment of the present invention in the specific implementation process, in order to realize the demand for filtering out different THz waves, metal layer 120
It can be set to one layer, may be set to be multilayer.
For the embodiment of the present invention with one layer of metal layer 120, by the periodic distance, the ruler that change laminated structure 121
It is very little etc., the different THz wave filter of available absorption peak；With the increasing of the geometric dimension of the laminated structure of metal layer
Greatly, the position of absorption peak is mobile to high frequency band, for example, as shown in Fig. 2, (becoming laminated structure by the length b for adjusting horizontal stripe 122
121 width), the length a of the length c of taeniae 123 and/or laminated structure 121, and for multiple horizontal stripes 122 and/or
Taeniae 123, the width between different horizontal stripes 122 and/or between different taeniaes 123 can also be adjusted, in turn, is realized to difference
The absorption of the THz wave of peak value.Wherein, as shown in figure 3, Fig. 3 show metal layer of the embodiment of the present invention 120 be single layer when, to too
The absorbance curves of Hertz wave, the embodiment of the present invention absorbs the Terahertz at 0.92THz close to perfection as seen from Figure 3
Wave, and reached within the scope of 0.8THz to 1THz 90% or more THz wave absorptivity.
In addition, as shown in Figure 4, Figure 5, Fig. 4 is the structural schematic diagram of three layers of THz wave filter, Fig. 5 is three layers of terahertz
The hereby Structure of cross section schematic diagram of wave filter.For the embodiment of the present invention with more metal layers 120, can also pass through by
Each layer is arranged to the periodic distance with various sizes of laminated structure 121 and each lamellar structure 121, between layers
Distance, it is available absorb the continuous peak value of cluster THz wave filter.By to dielectric material thickness, dielectric constant
Design, make Meta Materials absorption peak generate frequency displacement, so as to realize the movement of the filter passband in certain wavelength band
And tuning.The embodiment of the present invention has been presented in Fig. 6 the absorbance curves that this filter is obtained by emulation, and stopband range exists
0.7 to 2.1THz wide frequency range, this programme are also extended to the integrated full Terahertz frequency of 2n (n >=1) a filter
The filter that domain absorbs.
In practical applications, for the embodiment of the present invention with more metal layers 120 generally by adjacent metal 120 it
Between distance be set as 1nm~100 μm, wherein distance be 10nm, 100nm, 10 μm when, the effect for inhaling THz wave is more preferable；
1nm~100 generally are set as by the thickness of laminated structure for the embodiment of the present invention with one layer or more metal layers 120
μm；The length of horizontal stripe 122 therein is set as 1nm~1000 μm, wherein effect becomes apparent from 10nm, 100nm, 100 μm；It is vertical
The length of item is 1nm~1000 μm, wherein effect becomes apparent from 10nm, 100nm, 100 μm；It can either guarantee so adjacent
Between metal layer while mutually insulated, and it can reasonably absorb the THz wave for needing to filter out；
Wherein, for the convenience on producing, implementing, the laminated structure 121 for belonging to same layer can be set into identical
Size.
Laminated structure 121 in the specific implementation process, can be arranged to the shape of class Roman number by the embodiment of the present invention,
Can specifically there are I type, II type or III type.Wherein Absorber Bandwidth of different shapes is also different, can be arranged according to actual needs.
Some basic parameters that several laminated structures 121 are class Roman capitals terahertz filter are given in following table 1, with
And different shape, different metal count the relationships with Absorber Bandwidth layer by layer:
Table 1
Embodiment two
This embodiment offers a kind of production process such as the terahertz filter in embodiment one as shown in fig. 7, comprises
Following processing step:
Step S701, standby piece, using double throwing silicon wafers as the support substrate piece 1 of flexible structure, by the method for thermal oxide,
Substrate surface grows layer of silicon dioxide as insulating medium layer 2, and the thickness of this layer of silica can be 300nm；
Step S702, in silicon chip surface precipitation polymers, the polymer be flexible polymer material (such as Parylene,
The flexibilities such as PMMA, PDMS and the excellent polymer material of translucency), with a thickness of 5 μm~200 μm, form the first layers of polymer material
Material 111；
Step S703, as the first substrate of filter, photoetching is smeared after routinely cleaning at first layer polymeric material
Glue 3 is exposed using the mask plate of the laminated structure figure in such as embodiment one, and the photoresist of developed removal exposure area；
Step S704, first layer polymeric materials splash-proofing sputtering metal after exposure forms the first metal layer 4, and metal can be
The resistivity such as copper, aluminium, silver are low, good conductivity metal material, and thickness can be 1nm~100 μm；
Step S705, removal photoresist is removed with acetone, sputters metal on a photoresist together as photoresist is by band
It walks, has thus obtained the metal layer 120 such as the laminated structure figure in embodiment one；
Step S706, precipitation polymerization material is packaged device, and thickness can be 5 μm~200 μm, obtains single layer terahertz
Hereby filter, the metal layer 120 in the filter are wrapped up by polymeric material layer 110；
By process above step, can obtain filtering such as the single-layer flexible Terahertz of the laminated structure in embodiment one
Device.The performance of the embodiment of the present invention is emulated, is obtained too by CST (CST STUDIO SUITE, Electromagnetic Simulation) software
The absorbance curves of hertz filter, as shown in figure 3, having reached perfect absorption at 0.92THz, and in 0.8THz to 1THz model
90% or more THz wave absorptivity is reached in enclosing.This characteristic provides foundation for the filtering of realization THz wave band.
The embodiment of the present invention in the specific implementation process, in order to manufacture the terahertz filter comprising more metal layers 120
Can also include:
Step S707, after conventional cleaning silicon chip, photoresist 3 is smeared, second of photoetching process is carried out, using such as embodiment one
In laminated structure figure mask plate exposure, remove the photoresist of exposure area；
Step S708, substrate surface sputters second layer metal layer 5, metal can for the resistivity such as copper, aluminium, silver low, electric conductivity
Good metal material, with a thickness of 1nm~100 μm；
Step S709, removal photoresist is removed with acetone, the metal sputtered on a photoresist is pulled away, thus obtains
Such as the metal layer 120 of the laminated structure figure in embodiment one；
Step S710, precipitation polymerization material (such as Parylene, PMMA, the flexibilities such as PDMS and the excellent polymerization of translucency
Object material), with a thickness of 5 μm~200 μm, at this point, can obtain metal layer 120 is double-deck THz wave filter.
It further, can also include: step S711, using double-deck THz wave filter as substrate, inorganic cleaning
After silicon wafer, photoresist 3 is smeared, third time photoetching process is carried out, using the mask plate of the laminated structure figure in such as embodiment one
Exposure, the photoresist of developed removal exposure area；
Step S712, substrate surface sputters third layer metal layer 6, metal can for the resistivity such as copper, aluminium, silver low, electric conductivity
Good metal material, with a thickness of 1nm~100 μm；
Removal photoresist is removed with acetone, the metal layer sputtered on a photoresist is pulled away, and has thus been obtained as implemented
The third layer metal structure of laminated structure figure in example one；
Step S713, precipitation polymerization material (such as Parylene, PMMA, the flexibilities such as PDMS and the excellent polymerization of translucency
Object material) device is packaged, with a thickness of 1 μm~200 μm；
By above-mentioned processing step, can manufacture if the laminated structure figure in embodiment one is comprising three-layer metal layer 120
Terahertz wide-band filter 100.And so on, as needed, by that can be prepared in this approach as each in embodiment one
Kind laminated structure and different layers of terahertz filters.The difference of absorption band can be shown in absorbance curves.
In conclusion the embodiment of the present invention is by being designed to laminated structure for metal layer, and periodic distribution is poly- in flexibility
In polymeric material layer made of condensation material, form terahertz filter, can effectively your certain THz wave of filter bag, lead to
The distance that the size of laminated structure and each laminated structure is mutual is crossed, may be implemented to resistance band or peak value
Adjusting；The embodiment of the present invention can also be arranged to multilayered structure as needed, to realize to a certain range of Terahertz
Wave filters out, by adjusting the size of each lamellar structure, the distance between adjacent metal, or even by the piece on different metal layer
Shape structure setting may be implemented to filter out different THz wave wave bands, wherein with laminated structure geometry at different sizes
The position of the increase of size, absorption peak is mobile to high frequency band；And with the increase of interfloor distance, stop-band frequency is moved to low-frequency band
It is dynamic.
The embodiment of the present invention in the specific implementation process, can since the embodiment of the present invention is made of flexible polymeric material
It is arranged on the interface for the receiving end that arbitrary shape is attached to Terahertz communication system with basis；By the way of multiple-layer stacked,
It is even to be dispersed in flexible polymeric material, it is effectively prevent metal layer deformation fracture, improves reliability.Laminated structure, which uses, includes horizontal stripe
The difficulty of preparation is reduced with the structure type of taeniae convenient for production.
Those of ordinary skill in the art will appreciate that: attached drawing is the schematic diagram of one embodiment, module in attached drawing or
Process is not necessarily implemented necessary to the present invention.
All the embodiments in this specification are described in a progressive manner, same and similar portion between each embodiment
Dividing may refer to each other, and each embodiment focuses on the differences from other embodiments.Especially for device or
For system embodiment, since it is substantially similar to the method embodiment, so describing fairly simple, related place is referring to method
The part of embodiment illustrates.Apparatus and system embodiment described above is only schematical, wherein the conduct
The unit of separate part description may or may not be physically separated, component shown as a unit can be or
Person may not be physical unit, it can and it is in one place, or may be distributed over multiple network units.It can root
According to actual need that some or all of the modules therein is selected to achieve the purpose of the solution of this embodiment.Ordinary skill
Personnel can understand and implement without creative efforts.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by anyone skilled in the art,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with scope of protection of the claims
Subject to.
Claims (5)
1. a kind of terahertz filter characterized by comprising polymeric material layer and metal layer；The metal layer includes piece
Shape structure, the laminated structure include horizontal stripe and taeniae, and the both ends of the taeniae are vertically connected with the horizontal stripe, form II type
Or III type structure；The laminated structure periodic distribution is in the polymeric material layer；The metal layer is multilayer, described adjacent
The distance between metal layer is 1nm~100nm；The laminated structure size for belonging to same layer is identical；The laminated structure
With a thickness of 1nm~100 μm；The length of the horizontal stripe is 1nm~100 μm；The length of the taeniae is 1nm~100 μm；It is described poly-
Condensation material layer is flexible polymeric material.
2. terahertz filter according to claim 1, which is characterized in that the flexible polymeric material includes: poly- to two
Toluene, polymethyl methacrylate or dimethyl silicone polymer.
3. a kind of production method of the terahertz filter as described in claim 1 to 2 any one characterized by comprising
Using double throwing silicon wafers as support substrate piece, by thermal oxidation process, in the substrate slice Surface Creation layer of silicon dioxide
Insulating medium layer；
First layer polymeric material is formed in double silicon chip surface precipitating flexible polymer materials of throwing；
Using the first layer polymeric material as the first substrate, cleaning, and smear photoresist；
The photoetching smeared on the first layer polymeric material is exposed using mask plate corresponding with the figure of the laminated structure
Glue, the photoresist of developed removal exposure area；
The first layer polymeric materials splash-proofing sputtering metal after exposure forms the first metal layer；
Removal photoresist is removed with acetone, the metal sputtered on the photoresist is removed together；
First layer polymeric materials precipitating flexible polymeric material after removing photoresist as second layer polymeric material,
The first layer polymeric material and the second layer polymeric material form polymeric material layer.
4. the production method of terahertz filter according to claim 3, which is characterized in that the first layer polymeric material
With a thickness of 1 μm~200 μm；The first metal layer is with a thickness of 1nm~100 μm.
5. the production method of terahertz filter according to claim 3 or 4, which is characterized in that further include:
Using the second layer polymeric material as the second substrate, cleaning, and smear photoresist；
The photoetching smeared on the second layer polymeric material is exposed using mask plate corresponding with the figure of the laminated structure
Glue, the photoresist of developed removal exposure area；；
The second layer polymeric materials splash-proofing sputtering metal after exposure forms second metal layer, with a thickness of 1nm~100 μm；
Removal photoresist is removed with acetone, the metal sputtered on the photoresist is removed together；
Second layer polymeric materials precipitating flexible polymeric material after removing photoresist as third layer polymeric material,
The first layer polymeric material, the second layer polymeric material and third layer polymeric material form polymeric material layer；
And so on, until obtaining the terahertz filter with the metal layer for needing quantity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510439332.4A CN105048028B (en) | 2015-07-23 | 2015-07-23 | A kind of terahertz filter and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510439332.4A CN105048028B (en) | 2015-07-23 | 2015-07-23 | A kind of terahertz filter and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105048028A CN105048028A (en) | 2015-11-11 |
| CN105048028B true CN105048028B (en) | 2019-08-06 |
Family
ID=54454385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510439332.4A Active CN105048028B (en) | 2015-07-23 | 2015-07-23 | A kind of terahertz filter and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105048028B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107230816B (en) * | 2017-05-10 | 2019-04-26 | 中国电子科技集团公司第五十四研究所 | A kind of terahertz filter and its processing method |
| CN108376817A (en) * | 2018-02-06 | 2018-08-07 | 雄安华讯方舟科技有限公司 | Terahertz bandstop filter unit based on Meta Materials and Terahertz bandstop filter |
| CN110165415B (en) * | 2019-05-31 | 2021-12-21 | 南京邮电大学 | Hollowed-out upper-layer and lower-layer coupling type electromagnetic induction transparent film |
| CN111244586A (en) * | 2020-01-15 | 2020-06-05 | 合肥工业大学 | Method for preparing periodic gear-shaped terahertz band-pass filter structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102890992B (en) * | 2011-05-10 | 2015-10-14 | 深圳光启高等理工研究院 | A kind of transparent artificial electromagnetic material |
| CN202259698U (en) * | 2011-10-25 | 2012-05-30 | 哈尔滨理工大学 | Fractal structure-based multi-tape polarization insensitive terahertz metamaterial absorber |
| CN102664312A (en) * | 2012-04-13 | 2012-09-12 | 深圳光启创新技术有限公司 | Method for multilayer metamaterial film coating and method for manufacturing metamaterial antenna housing |
| CN102723568B (en) * | 2012-05-30 | 2015-07-22 | 深圳光启创新技术有限公司 | TM mode harmonic oscillator and preparation method thereof |
| CN103675955A (en) * | 2012-08-31 | 2014-03-26 | 深圳光启创新技术有限公司 | Method for preparing transparent metamaterial |
-
2015
- 2015-07-23 CN CN201510439332.4A patent/CN105048028B/en active Active
Non-Patent Citations (1)
| Title |
|---|
| "太赫兹频谱可重构MEMS超材料研究";杨天阳;《中国优秀硕士学位论文全文数据库信息科技辑》;20140615;论文正文第19-57页 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105048028A (en) | 2015-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105048028B (en) | A kind of terahertz filter and preparation method thereof | |
| Li et al. | A low-profile broadband bandpass frequency selective surface with two rapid band edges for 5G near-field applications | |
| CN106058482B (en) | Transparent wideband electromagnetic wave absorbing device based on bilayer conductive film | |
| CN103078158A (en) | L-band miniature low-pass filter | |
| Junlin et al. | Flexible dual-band band-stop metamaterials filter for the terahertz region | |
| CN106299558A (en) | high reliability dielectric waveguide filter | |
| KR101688210B1 (en) | Meshed chiral metamaterial | |
| Al-Sheikh et al. | Design of wideband bandstop frequency-selective structures using stacked parallel strip line arrays | |
| CN112490678B (en) | VO-based2Broadband terahertz super-surface absorption unit and super-surface absorber | |
| Ma et al. | Optically transparent broadband microwave absorber by graphene and metallic rings | |
| Zhou et al. | Flexible radiofrequency filters based on highly conductive graphene assembly films | |
| Abueidda et al. | Shielding effectiveness and bandgaps of interpenetrating phase composites based on the Schwarz Primitive surface | |
| CN109390700B (en) | Mixed structure metamaterial terahertz broadband absorber | |
| US20200153076A1 (en) | Composite Substrate for Radio Frequency Signals and Method of Manufacturing a Composite Substrate | |
| CN103401077A (en) | Miniaturized artificial magnetic conductor based on interdigital capacitor and application thereof | |
| CN110048201B (en) | Multi-band terahertz band elimination filter | |
| CN104485498B (en) | Sapphire substrates microstrip filter | |
| Zakaria et al. | Transformation of generalized chebyshev lowpass filter prototype to suspended stripline structure highpass filter for wideband communication systems | |
| JP6985048B2 (en) | Sheet type metamaterial | |
| CN105304980B (en) | Based on low Jie's Meta Materials band resistance type frequency-selective surfaces | |
| CN104051826A (en) | Asymmetric double-layer band pass frequency selective surface | |
| Belyaev et al. | A microwave bandpass filter on dielectric layers with metal grids | |
| Cahill et al. | Two-layer mm-wave FSS of linear slot elements with low insertion loss | |
| de Lucena Nóbrega et al. | Analysis of frequency selective surfaces with T-shaped pre-fractals patch elements | |
| Padooru et al. | Dual capacitive-inductive nature of graphene metasurface: Transmission characteristics at low-terahertz frequencies |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |