CN103675955A - Method for preparing transparent metamaterial - Google Patents
Method for preparing transparent metamaterial Download PDFInfo
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- CN103675955A CN103675955A CN201210316833.XA CN201210316833A CN103675955A CN 103675955 A CN103675955 A CN 103675955A CN 201210316833 A CN201210316833 A CN 201210316833A CN 103675955 A CN103675955 A CN 103675955A
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- indium oxide
- tin indium
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Abstract
The invention relates to a method for preparing a transparent metamaterial. The method comprises the following steps: firstly, performing deposition on the surface of one side of a transparent substrate to form an indium tin oxide conductive film; then, etching the indium tin oxide conductive film to form a plurality of indium tin oxide microstructures. According to the method for preparing the transparent metamaterial, deposition is performed on the surface of one side of the transparent substrate to form the indium tin oxide conductive film, and then a plurality of indium tin oxide microstructures are obtained through etching. As indium tin oxide has double characteristics of electrical conduction and optical transparency, the metamaterial prepared through the method can respond to visible light and be pervious to light. The refractive-index distribution of the metamaterial is designed, so that convergence, divergence, deflection and the like of visible light can be realized through one metamaterial or a plurality of metamaterials. The method is simple and easily used.
Description
Technical field
The present invention relates to super Material Field, more particularly, relate to a kind of preparation method of transparent metamaterial.
Background technology
Super material is a kind of novel artificial synthetic material that can respond electromagnetism generation, substrate and the artificial microstructure being attached on substrate, consists of.Because artificial microstructure is generally certain geometric structure that has that metal wire is arranged into, therefore can produce response by electromagnetism, thereby make super material monolithic embody the electromagnetic property that is different from substrate, such electromagnetic property can realize the irrealizable specific function of current material, such as realizing, electromagneticly converge, disperse etc., can be used on the electromagnetic communication fields such as antenna, radar.
Super material can be applied on various electromagnetic waves in theory, but existing application is conventionally only in electromagnetic communication fields such as microwaves, and is inoperative to visible ray, and this is that selection by substrate and artificial microstructure limits.Special selection by substrate and artificial microstructure can expand to visible light frequency band by the range of application of super material.
That how to prepare this class transparent metamaterial will be a brand-new problem.
Summary of the invention
Technical matters to be solved by this invention is that a kind of preparation method of brand-new transparent metamaterial is provided.
The method comprises the steps:
S1, on a side surface of transparency carrier, deposition forms tin indium oxide conductive film;
S2, etching oxidation indium tin conductive film are to form a plurality of tin indium oxide microstructures.
Further, described transparency carrier is made by transparent polymer material.
Further, described transparency carrier is made by polymethylmethacrylate, transparent polyurethane, tygon, polyethylene terephthalate or Polyvinylchloride.
Further, described tin indium oxide is In
2o
3and SnO
2potpourri.
Further, calculate by percentage to the quality In in described tin indium oxide
2o
3content be 80%-95%.
Further, the thickness of described tin indium oxide conductive film is between 4-400nm.
Further, described transparency carrier can be divided into a plurality of identical square transparency carrier unit, each transparency carrier unit and the tin indium oxide microstructure on it form a super material cell, and the length and width of each super material cell and thickness are all not more than the wavelength of working electromagnet ripple.
Further, described tin indium oxide conductive film adopts the method for electron beam evaporation, physical vapour deposition (PVD) or magnetron sputtering to deposit on a side surface of transparency carrier.
Further, described a plurality of tin indium oxide microstructure has identical geometric scheme.
Further, described tin indium oxide microstructure has the alabastrine geometric scheme of plane, described tin indium oxide microstructure has the first main line and the second main line of mutually vertically dividing equally, described the first main line is identical with the length of the second main line, described the first main line two ends are connected with two the first branch lines of equal length, described the first main line two ends are connected on the mid point of two the first branch lines, described the second main line two ends are connected with two the second branch lines of equal length, described the second main line two ends are connected on the mid point of two the second metal branch lines, described the first branch line and the second branch line equal in length.
According to the preparation method of transparent metamaterial of the present invention, by deposition on a side surface of transparency carrier, form tin indium oxide conductive film; Recycling etching obtains a plurality of tin indium oxide microstructures, because tin indium oxide has electricity conduction and optically transparent dual nature, therefore super material prepared by this method can produce response and can printing opacity to visible ray, by designing the index distribution of this super material, can realize the converging of visible ray by this super material or a plurality of this super material, disperse, the effect such as deviation.This method is simple and easy to use.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is the structural representation that utilizes the prepared transparent metamaterial of method provided by the present invention;
Fig. 2 is the structural representation of a super material cell of the transparent metamaterial shown in Fig. 1;
Fig. 3 is the tin indium oxide microstructure of a kind of form of adopting of method of the present invention;
Fig. 4 is a kind of derived structure of the tin indium oxide microstructure shown in Fig. 3;
Fig. 5 is a kind of distressed structure of the tin indium oxide microstructure shown in Fig. 3.
Embodiment
The preparation method who the present invention relates to a kind of transparent metamaterial, comprises the steps:
S1, on a side surface of transparency carrier, deposition forms tin indium oxide conductive film; Described tin indium oxide conductive film can adopt the method for electron beam evaporation, physical vapour deposition (PVD) or magnetron sputtering to deposit on a side surface of transparency carrier.
S2, etching oxidation indium tin conductive film are to form a plurality of tin indium oxide microstructures.Etched concrete technology is:
First, utilize the needed overall refractive index of the super material of the accomplished a certain specific function of emulation of the computer software (for example CST) to distribute, super material is divided into a plurality of super material cell D as shown in Figure 2 virtually, whole index distribution is decomposed to each super material cell, and the refractive index spatial that obtains super material cell is arranged.As shown in Figures 1 and 2, described transparency carrier 10 can be divided into a plurality of identical square transparency carrier unit U, each transparency carrier unit U and the tin indium oxide microstructure MS on it form a super material cell D, the length and width of each super material cell D and thickness are all not more than the wavelength of working electromagnet ripple, for example transparency carrier unit U is square sheet, its length and width equate, are 1/10th of working electromagnet wave-wave length, and its thickness is 1/20th of working electromagnet wave-wave length.When working electromagnet ripple herein refers to super material as communication device, the centre frequency of its work.
Then, determine the material of transparency carrier, the material (component) of tin indium oxide microstructure, by emulation, determine the concrete form of the super material cell that each refractive index on super material is corresponding, be size, the geometric scheme of the tin indium oxide microstructure in each super material cell, like this, the whole geometry pattern of all tin indium oxide microstructures can present on computers, according to this whole geometry design producing, goes out the mask (position of the non-hollow out of mask is the whole geometry pattern of all tin indium oxide microstructures) that etching is used.
Finally, mask is covered on the tin indium oxide conductive film forming in S1 step, contact again chemical solution, on tin indium oxide conductive film, the part of hollow out is dissolved falls, and then a plurality of tin indium oxide microstructures that need have been obtained, thereby produce the super material that we need, can realize the converging of visible ray by this super material or a plurality of this super material, disperse, the effect such as deviation.
Preferably, in order to reduce the difficulty of processing of mask, a plurality of tin indium oxide microstructures on transparency carrier adopt identical geometric scheme.
As shown in Figure 3, preferably, described tin indium oxide microstructure of the present invention has the alabastrine geometric scheme of plane, described tin indium oxide microstructure has the first main line J1 and the second main line J2 mutually vertically dividing equally, described the first main line J1 is identical with the length of the second main line J2, described the first main line J1 two ends are connected with two the first branch line F1 of equal length, described the first main line J1 two ends are connected on the mid point of two the first branch line F1, described the second main line J2 two ends are connected with two the second branch line F2 of equal length, described the second main line J2 two ends are connected on the mid point of two the second branch line F2, described the first branch line F1 and the second branch line F2's is equal in length.
Fig. 4 is a kind of derived structure of the alabastrine tin indium oxide microstructure of the plane shown in Fig. 3.Its two ends at each the first branch line F1 and each the second branch line F2 are all connected with identical three branch F3, and the mid point of corresponding three branch F3 is connected with the end points of the first branch line F1 and the second branch line F2 respectively.The rest may be inferred, and the present invention can also derive the metal micro structure of other form.
Fig. 5 is a kind of distressed structure of the alabastrine tin indium oxide microstructure of the plane shown in Fig. 3, the metal micro structure of this kind of structure, the first main line J1 and the second main line J2 are not straight lines, but folding line, the first main line J1 and the second main line J2 are provided with two kink WZ, but the first main line J1 remains vertical with the second main line J2 to be divided equally, by arrange kink towards with the relative position of kink on the first main line and the second main line, the figure to any direction 90-degree rotation all overlaps with former figure around the axis perpendicular to the first main line and the second main line intersection point to make the tin indium oxide microstructure shown in Fig. 5.In addition, can also have other distortion, for example, the first main line J1 and the second main line J2 all arrange a plurality of kink WZ.
Existing super material, because artificial microstructure and substrate are opaque material, is therefore mainly used in microwave region, can not generation effect to visible ray.Transparent metamaterial as herein described, refers to that penetrability reaches more than 85% super material.
Transparency carrier of the present invention for example, can be transparent organic polymer material.In preferred embodiment, transparency carrier 3 of the present invention is selected transparent organic glass, i.e. polymethylmethacrylate, the English PMMA that is called for short.Also can be other transparent organic polymer material, such as being polystyrene (PS) transparent polyurethane (PU), tygon (PE), Low Density Polyethylene (LDPE), polypropylene (PP), polyethylene terephthalate (PET), Polyvinylchloride (PVC) etc.
These materials are by the manufacturing process of prior art, all can realize transparent or semitransparently, and visible ray is seen through.
Artificial microstructure of the present invention is transparent or semitransparent tin indium oxide microstructure.
Tin indium oxide (ITO) is a kind of indium (III family) oxide In
2o
3and tin (IV family) oxide S nO
2potpourri, calculate by percentage to the quality In in described tin indium oxide
2o
3content be 80%-95%.The present invention preferably, calculates by percentage to the quality, contains 90% In in tin indium oxide
2o
3and 10% SnO
2.Tin indium oxide conductive film thickness between 4～400nm time, is clear, colorless, can be used as conductive film and substitutes that silver, copper are wiry also has a good light transmission simultaneously.
Therefore tin indium oxide has good electricity conduction, can realize the achieved functions of good conductor such as silver, copper, and therefore alternative silver, copper are as the starting material of artificial microstructure in super material.
By reference to the accompanying drawings embodiments of the invention are described above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; rather than restrictive; those of ordinary skill in the art is under enlightenment of the present invention; not departing from the scope situation that aim of the present invention and claim protect, also can make a lot of forms, within these all belong to protection of the present invention.
Claims (10)
1. a preparation method for transparent metamaterial, comprises the steps:
S1, on a side surface of transparency carrier, deposition forms tin indium oxide conductive film;
S2, etching oxidation indium tin conductive film are to form a plurality of tin indium oxide microstructures.
2. the preparation method of transparent metamaterial according to claim 1, is characterized in that, described transparency carrier is made by transparent polymer material.
3. the preparation method of transparent metamaterial according to claim 2, is characterized in that, described transparency carrier is made by polymethylmethacrylate, polystyrene, transparent polyurethane, tygon, polyethylene terephthalate or Polyvinylchloride.
4. the preparation method of transparent metamaterial according to claim 1, is characterized in that, described tin indium oxide is In
2o
3and SnO
2potpourri.
5. the preparation method of transparent metamaterial according to claim 4, is characterized in that, calculates by percentage to the quality In in described tin indium oxide
2o
3content be 80%-95%.
6. the preparation method of transparent metamaterial according to claim 1, is characterized in that, the thickness of described tin indium oxide conductive film is between 4-400nm.
7. the preparation method of transparent metamaterial according to claim 1, it is characterized in that, described transparency carrier can be divided into a plurality of identical square transparency carrier unit, each transparency carrier unit and the tin indium oxide microstructure on it form a super material cell, and the length and width of each super material cell and thickness are all not more than the wavelength of working electromagnet ripple.
8. the preparation method of transparent metamaterial according to claim 1, is characterized in that, described tin indium oxide conductive film adopts the method for electron beam evaporation, physical vapour deposition (PVD) or magnetron sputtering to deposit on a side surface of transparency carrier.
9. the preparation method of transparent metamaterial according to claim 1, is characterized in that, described a plurality of tin indium oxide microstructures have identical geometric scheme.
10. the preparation method of transparent metamaterial according to claim 9, it is characterized in that, described tin indium oxide microstructure has the alabastrine geometric scheme of plane, described tin indium oxide microstructure has the first main line and the second main line of mutually vertically dividing equally, described the first main line is identical with the length of the second main line, described the first main line two ends are connected with two the first branch lines of equal length, described the first main line two ends are connected on the mid point of two the first branch lines, described the second main line two ends are connected with two the second branch lines of equal length, described the second main line two ends are connected on the mid point of two the second metal branch lines, described the first branch line and the second branch line equal in length.
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| CN201210316833.XA CN103675955A (en) | 2012-08-31 | 2012-08-31 | Method for preparing transparent metamaterial |
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| CN201210316833.XA CN103675955A (en) | 2012-08-31 | 2012-08-31 | Method for preparing transparent metamaterial |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105048028A (en) * | 2015-07-23 | 2015-11-11 | 北京交通大学 | Terahertz filter and manufacturing method thereof |
| CN105549132A (en) * | 2015-12-09 | 2016-05-04 | 同济大学 | Near-infrared omnidirectional absorber based on hyperbolic photonic crystal |
| CN107579328A (en) * | 2017-09-26 | 2018-01-12 | 中国计量大学 | A kind of super transparent resonance device of surface electromagnetically induced of E shapes all dielectric |
| CN110391500A (en) * | 2018-04-16 | 2019-10-29 | 南京大学 | A kind of super surface design method of optical clear coding of broadband reduction electromagnetic scattering |
| CN111207626A (en) * | 2020-01-08 | 2020-05-29 | 北京航天发射技术研究所 | Compatible radar and optical characteristic conversion device |
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|---|---|---|---|---|
| US4656487A (en) * | 1985-08-19 | 1987-04-07 | Radant Technologies, Inc. | Electromagnetic energy passive filter structure |
| TW201034289A (en) * | 2009-03-04 | 2010-09-16 | Ind Tech Res Inst | Dual polarization antenna structure, radome and design method thereof |
| CN102480006A (en) * | 2011-04-12 | 2012-05-30 | 深圳光启高等理工研究院 | Transparent metamaterial |
-
2012
- 2012-08-31 CN CN201210316833.XA patent/CN103675955A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4656487A (en) * | 1985-08-19 | 1987-04-07 | Radant Technologies, Inc. | Electromagnetic energy passive filter structure |
| TW201034289A (en) * | 2009-03-04 | 2010-09-16 | Ind Tech Res Inst | Dual polarization antenna structure, radome and design method thereof |
| CN102480006A (en) * | 2011-04-12 | 2012-05-30 | 深圳光启高等理工研究院 | Transparent metamaterial |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105048028A (en) * | 2015-07-23 | 2015-11-11 | 北京交通大学 | Terahertz filter and manufacturing method thereof |
| CN105549132A (en) * | 2015-12-09 | 2016-05-04 | 同济大学 | Near-infrared omnidirectional absorber based on hyperbolic photonic crystal |
| CN107579328A (en) * | 2017-09-26 | 2018-01-12 | 中国计量大学 | A kind of super transparent resonance device of surface electromagnetically induced of E shapes all dielectric |
| CN107579328B (en) * | 2017-09-26 | 2020-01-14 | 中国计量大学 | E-shaped full-medium super-surface electromagnetic induction transparent resonance device |
| CN110391500A (en) * | 2018-04-16 | 2019-10-29 | 南京大学 | A kind of super surface design method of optical clear coding of broadband reduction electromagnetic scattering |
| CN111207626A (en) * | 2020-01-08 | 2020-05-29 | 北京航天发射技术研究所 | Compatible radar and optical characteristic conversion device |
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Application publication date: 20140326 |