CN110767964A - Tunable terahertz band-stop filter - Google Patents
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Abstract
The invention discloses a tunable terahertz band-stop filter which comprises a high-voltage electrode, a dielectric container, a ground electrode, a dynamic switching capacitor bank, a resistor and a high-voltage pulse power supply. The bottom of the medium container is provided with a micro through hole array which is arranged periodically, the upper surface of the high-voltage electrode is in close contact with the inner surface of the top of the medium container, the lower surface of the high-voltage electrode is spaced from the upper end of the micro through hole array, the surface of the ground electrode is in close contact with the outer surface of the bottom of the medium container, the medium container is filled with working gas, the resistor is connected with the dynamic switching capacitor bank in parallel, one end of the resistor after the resistor is connected with the output end of the high-voltage pulse power. After high-voltage pulses are applied to the high-voltage electrodes, discharge plasmas are generated and uniformly filled in the micro through hole array to form a micro plasma array, and the micro plasma array is used for realizing band elimination filtering of terahertz waves. The terahertz passive filter solves the problems that the structure of the existing terahertz passive filter is solidified, cannot be reconstructed, and is narrow in adjustable frequency band.
Description
Technical Field
The invention belongs to the technical field of terahertz waves, and particularly relates to a terahertz band elimination filter.
Background
Terahertz waves refer to electromagnetic waves with the frequency within the range of 0.1-10THz and the wavelength within the range of 0.03-3mm, are partially overlapped with microwaves at a low frequency band, are partially overlapped with infrared rays at a high frequency band, and are just positioned in a cross region of electronics and photonics, so that the terahertz waves have certain unique performances, such as high time resolution, small harm to organisms, wide communication frequency band, strong penetrability and the like. The terahertz filter is a frequency-selecting device of a terahertz frequency band, is used for effectively inhibiting noise, interference, stray signals and the like, and is one of key devices for applications such as terahertz imaging and terahertz communication. The terahertz filter is divided into a low-pass filter, a high-pass filter, a band-pass filter and a band-stop filter. The structure of the tunable terahertz band-stop filter is generally a crystal containing a periodic artificial microstructure, and the lattice constant is in the micron level and is equivalent to the wavelength of terahertz waves. In the periodic microstructure, the terahertz band gap structure is generated by Bragg scattering, so that terahertz waves with frequencies falling into a forbidden band range are forbidden to be transmitted, and a terahertz band elimination filtering function is realized.
Most of the existing terahertz filters are passive devices and have the defects of structural solidification, incapability of reconstruction and narrow adjustable frequency band. Therefore, attempts have been made to add external control environment variables (temperature, voltage, electromagnetic field, etc.) to the passive filter to regulate the filter characteristics of the terahertz filter. Different from the filtering regulation and control method, the micro-plasma array takes plasma as a metamaterial, and the space of the array is filled with the plasma or a periodically arranged plasma structure is directly formed, so that a special terahertz active filter can be formed. The generation of the plasma and the physical characteristic parameters can be regulated and controlled by external discharge parameters, and the equivalent dielectric coefficient can be positive or negative, so that the terahertz filter characteristic of the micro-plasma array can be regulated in an electrically controlled manner, and the micro-plasma array has the characteristics of quick dynamic response, reconfigurability and wide regulation frequency band. To realize the control of terahertz wave band, it is required to generate a terahertz wave with high electron density at micrometer scale: (>1015cm-3) The formed micro-plasma array is required to have better uniformity and dynamic controllability. However, the above-mentioned micro-iso was generatedPlasma arrays also present several difficulties: (1) compared with millimeter-scale discharge plasma, the discharge plasma characteristics at the micrometer scale deviate from the classic paschen law, so that the breakdown voltage is obviously increased; (2) conventional microplasmas have difficulty achieving high electron densities; (3) the microplasma array has poor uniformity and short lifetime.
The existing partial terahertz filter technology is as follows:
(1) the invention discloses a tunable terahertz band-stop filter unit based on a metamaterial and a tunable terahertz band-stop filter, and relates to a tunable terahertz band-stop filter unit based on a metamaterial, as shown in fig. 1, the tunable terahertz band-stop filter unit comprises a first resonator 100, a first dielectric layer 200 and a second resonator 300, wherein the application number is CN 108376817A; the first resonator 100, the first dielectric layer 200, and the second resonator 300 are sequentially stacked; the first resonator 100 is swastika or swastika sheet-shaped structure, and the second resonator 300 is swastika or swastika sheet-shaped structure; the first resonator 100 and the second resonator 300 have the same structure, and the sizes of the first resonator 100 and the second resonator 300 are in a scaling relationship. The prepared tunable terahertz band elimination filter unit is insensitive to the incident direction of electromagnetic waves in the terahertz frequency range, so that wide-angle incidence is realized, and the effect of widening the terahertz frequency range capable of being attenuated or reflected is achieved. A6 multiplied by 6 array structure is formed in the tunable terahertz band elimination filter unit, when the incident angle is 0 degree, the center frequency of a forbidden band is approximately equal to 0.57THz, and the forbidden band range is 0.54-0.61 THz. The invention has the disadvantages that the bandwidth is only 0.07THz, the filtering frequency band is narrow, and the structure can not be reconstructed and the filtering frequency can not be regulated.
(2) An ultrathin multichannel terahertz filter with temperature regulation is disclosed in the invention of Chinese patent application 2 (publication No. CN 101504997A). As shown in figure 2, the filter is to construct a curved surface on the surface of a high-impedance monocrystalline silicon or gallium arsenide substrate, then grow an indium antimonide film on the curved surface of the substrate, the thickness of the film material is ultrathin (the total thickness is not more than 2.15 microns), the multichannel terahertz filter has five resonance transmission peaks in the frequency range of 0.1 to 3 terahertz, the resonance transmission frequency is basically not changed along with the temperature, and the transmissivity of the five resonance modes is increased along with the temperature reduction, and the transmissivity is as high as 90-93%. The band-pass filter changes various optical parameters of the undoped indium antimonide material at different temperatures through temperature regulation and control, and regulates the transmissivity of a resonance transmission peak, and has the defects that the temperature regulation and control mode is not convenient enough, the transmissivity can be regulated only, and the resonance transmission frequency cannot be regulated.
Disclosure of Invention
In order to solve the technical problems mentioned in the background art, the invention provides a tunable terahertz band-stop filter.
In order to achieve the technical purpose, the technical scheme of the invention is as follows:
a tunable terahertz band elimination filter comprises a high-voltage electrode, a dielectric container, a ground electrode, a dynamic switching capacitor bank, a resistor and a high-voltage pulse power supply; the bottom of the medium container is provided with a micro through hole array which is arranged periodically, the upper surface of the high-voltage electrode is in close contact with the inner surface of the top of the medium container, a gap is reserved between the lower surface of the high-voltage electrode and the upper end of the micro through hole array, the surface of the ground electrode is in close contact with the outer surface of the bottom of the medium container, so that the lower end of the micro through hole array is sealed, the medium container is filled with working gas, the resistor and the dynamic switching capacitor bank are connected in parallel, one end of the resistor and the dynamic switching capacitor bank which are connected in parallel is connected to the output end of a high-voltage pulse power; after high-voltage pulses are applied to the high-voltage electrodes, working gas in the dielectric container is ionized to generate discharge plasma and uniformly fill the micro through hole array, so that a micro plasma array is formed, terahertz waves are vertically incident from one side of the micro plasma array, and the terahertz waves are emitted from the other side of the micro plasma array after being subjected to band-stop filtering.
Furthermore, the medium container is made of quartz, ceramic or polyethylene; the media container is generally square and has dimensions of at least 1.5cm long by 1.5cm wide by 2cm high.
Furthermore, the diameter of each micro-through hole of the micro-through hole array is 10-100 μm, the distance between adjacent micro-through holes is 100-2000 μm, the length of the micro-through hole is at least 0.5cm, and the arrangement shape of the micro-through holes is square or trapezoid.
Furthermore, the high-voltage electrode is made of stainless steel, aluminum or copper, the high-voltage electrode is a square bare electrode, the cross section of the high-voltage electrode is slightly smaller than that of the medium container, the thickness of the high-voltage electrode is 0.2-1cm, the edge of the high-voltage electrode is an arc chamfer, and the distance between the lower surface of the high-voltage electrode and the upper end of the micro through hole array is 0.1-1 cm.
Furthermore, the ground electrode is made of stainless steel, aluminum or copper, is square, has a cross section slightly larger than the bottom of the medium container, and has a thickness of 0.1-0.3 cm.
Furthermore, the working gas is helium, neon, argon or a mixed gas of at least one of the gases and other simple substances, and the working pressure is 1-100 kPa.
Furthermore, the resistor is a high-voltage non-inductive resistor, the resistance value of the resistor is 1-100k omega, and the power of the resistor is 50-500W.
Further, the dynamic switching capacitor bank comprises a plurality of switchable capacitors connected in parallel, and each switchable capacitor is connected in series with the high-voltage solid-state switch; the switchable capacitors are 10 high-voltage non-inductive capacitors, the capacitance value of each switchable capacitor is 1 muF, and the rated voltage is 20 kV; the high-voltage solid-state switch is a silicon controlled thyristor, the rated voltage of the high-voltage solid-state switch is 1-20kV, and the on-off time of the high-voltage solid-state switch is less than 15 mu s; the number of switchable capacitors of the access circuit is controlled by the high-voltage solid-state switch, so that the equivalent capacitance value is changed within the range of 1-10 mu F.
Further, the output parameters of the high-voltage pulse power supply are as follows: the pulse width is 0.1-100 mus, the rising edge is less than 1 mus, the frequency is 0.1-40kHz, and the voltage amplitude is 0-20 kV.
Further, the microplasma array is confined in a microperforation array, the microplasma having an electron density of at least 1015cm-3Diameter of 1-100 μm, length of at least 0.5cm, and arrangement shape identical to that of micro via arrayThe working pressure is 1-100 kPa; the characteristic physical parameters of the micro plasma array are changed by adjusting the parameters, the resistance, the dynamic switching capacitor bank and the working gas components of the high-voltage pulse power supply;
the bandwidth of the tunable terahertz band-stop filter is 0.1-0.4THz, the attenuation in the band-stop range is at least 20dB, and the tunable range of the band-gap center frequency is at least 20 GHz; the characteristic physical parameters of the micro-plasma array are controlled, so that the terahertz band-stop filtering characteristic is regulated and controlled.
Adopt the beneficial effect that above-mentioned technical scheme brought:
(1) according to the invention, the micro-plasma array is formed through the micro-through hole array, and the formed micro-plasma array has the characteristics of small characteristic size and high electron density, and can realize terahertz band-stop filtering;
(2) the micro through hole array structure designed by the invention has influence on gas discharge and filtering effects, the diameter of the through holes is very small, and the number of the through holes is large, so that the density of plasma generated in the through holes is higher, and the uniformity is ensured;
(3) according to the invention, by adjusting parameters, resistance, capacitance, working gas components or pressure of the high-voltage pulse power supply, characteristic physical parameters of the micro-plasma array can be conveniently changed, and wide-range tuning of terahertz band-stop filtering is realized; the formed micro-plasma array has the electrical control performance, so that the tunable terahertz band-stop filter can be reconfigurable and has high dynamic response speed;
(4) according to the invention, the generated micro-plasma array is relatively uniform through the uniformity of the electric fields of the inert working gas and the high-voltage electrode and the rapid nanosecond rising edge of the high-voltage pulse power supply;
(5) the invention adopts inert working gas and air pressure control, thus reducing the breakdown voltage; the micro through hole with high length-diameter ratio, the high-voltage pulse power supply with the rapid pulse rising edge, the exposed high-voltage electrode and the ground electrode are adopted, so that plasma is generated in the micro through hole and has high electron density;
(6) the invention only adopts a pair of high-voltage electrode and ground electrode, and simultaneously generates plasma in a plurality of micro through holes, thereby reducing the economic cost and the complexity of the electrode structure;
(7) the high-voltage electrode is not in contact with the micro through hole, and the ground electrode is in close contact with the micro through hole array but is not inserted into the micro through hole, so that the process complexity is greatly reduced.
Drawings
FIG. 1 is a schematic structural diagram of the prior art Chinese patent application 1;
FIG. 2 is a schematic structural diagram of the prior art Chinese patent application 2;
FIG. 3 is a schematic diagram of a tunable terahertz band-stop filter designed by the present invention;
FIG. 4 is a schematic diagram of a dynamically switched capacitor bank of the present invention;
FIG. 5 is a schematic cross-sectional view of a micro-via array of the present invention;
FIG. 6 is a diagram of a stop band characteristic of a microplasma array according to an embodiment of the present invention.
Detailed Description
The technical scheme of the invention is explained in detail in the following with the accompanying drawings.
As shown in fig. 3, the tunable terahertz band-stop filter includes a high-voltage electrode 1, a dielectric container 2, a ground electrode 4, a dynamic switching capacitor bank 5, a resistor 6 and a high-voltage pulse power supply 7. The bottom of the medium container 2 is provided with a micro through hole array 3 which is arranged periodically, the upper surface of the high-voltage electrode 1 is in close contact with the inner surface of the top of the medium container 2, a gap is arranged between the lower surface of the high-voltage electrode 1 and the upper end of the micro through hole array 3, the surface of the ground electrode 4 is in close contact with the outer surface of the bottom of the medium container 2, so that the lower end of the micro through hole array 3 is sealed, the medium container 2 is filled with working gas 8, the resistor 6 is connected with the dynamic switching capacitor bank 5 in parallel, one end of the two parallel connected is connected to the output end of the high-voltage pulse power supply 7, and the other end of. After high-voltage pulses are applied to the high-voltage electrode 1, working gas 8 in the medium container 2 is ionized to generate discharge plasma and uniformly fill the micro through hole array 3, so that a micro plasma array is formed, terahertz waves vertically enter from one side of the micro plasma array, and the terahertz waves are emitted from the other side of the micro plasma array after being subjected to band-stop filtering. The generation and characteristic physical parameters of the micro-plasma array are controlled by changing parameters of a high-voltage pulse power supply, components of working gas, a resistor and a dynamic switching capacitor bank, so that the terahertz band-stop filtering characteristic of the micro-plasma array is regulated and controlled.
In the present embodiment, the following preferred schemes are adopted for the medium container 2:
the dielectric container is made of quartz, ceramic or polyethylene, and has a square shape and a size of at least 1.5cm (length) x 1.5cm (width) x 2cm (height). The medium container contains a sealed working gas capable of withstanding a pressure of at least 2 atmospheres. And the high-voltage electrode and the ground electrode are respectively fixed on the inner surface of the top part and the outer surface of the bottom part of the medium container by adopting an active metal brazing mode.
In this embodiment, the following preferred scheme is adopted for the micro via array 3:
the diameter of each micro-through hole of the micro-through hole array is 10-100 mu m, the distance between every two adjacent micro-through holes is 100-2000 mu m, the length of each micro-through hole is at least 0.5cm, and the arrangement shape of each micro-through hole is square or trapezoid. The micro through holes provide generating channels for micro plasmas, and a micro plasma array with alternately and periodically arranged medium and plasmas can be formed. The cross-section of the micro-via array is shown in fig. 4.
In this embodiment, the high voltage electrode 1 is implemented by adopting the following preferred scheme:
the high-voltage electrode is made of stainless steel, aluminum or copper, the high-voltage electrode is a square bare electrode, the cross section of the high-voltage electrode is slightly smaller than that of the medium container, the thickness of the high-voltage electrode is 0.2-1cm, the edge of the high-voltage electrode is an arc chamfer, and the distance between the lower surface of the high-voltage electrode and the upper end of the micro through hole array is 0.1-1 cm. The high-voltage electrode provides a high electric field which is uniformly distributed, so that the working gas can be ionized to generate more uniform plasma.
In this embodiment, the ground electrode 4 is implemented by using the following preferred scheme:
the ground electrode is made of stainless steel, aluminum or copper, is square, has a cross section slightly larger than the bottom of the medium container, and has a thickness of 0.1-0.3 cm. The ground electrode can not only seal one end of the micro through hole, but also enhance the electric field, so that plasma can be generated in the micro through hole.
In this embodiment, the working gas 8 is implemented by adopting the following preferred scheme:
the working gas is helium, neon, argon or a mixed gas of at least one of the gases and other simple substances, and the working pressure is 1-100 kPa. The working gas serves to reduce the breakdown voltage and produce a more uniform plasma.
In this embodiment, the resistor 6 is implemented by using the following preferred scheme:
the resistor is a high-voltage non-inductive resistor, the resistance value of the resistor is 1-100k omega, and the power of the resistor is 50-500W. The power supply is used for limiting the current, protecting the power supply and the micro plasma array and prolonging the service life.
In this embodiment, the dynamic switching capacitor bank 5 is implemented by adopting the following preferred scheme:
the dynamic switching capacitor bank comprises a plurality of switchable capacitors connected in parallel, and each switchable capacitor is connected with a high-voltage solid-state switch in series. The switchable capacitors are 10 high-voltage non-inductive capacitors in total, the capacitance value is 1 muF, and the rated voltage is 20 kV; the high-voltage solid-state switch is a thyristor, the rated voltage is 1-20kV, and the on-off time is less than 15 mu s. The number of capacitors connected into the circuit is controlled by the high-voltage solid-state switch, so that the equivalent capacitance value can be changed within the range of 1-10 mu F. The dynamic switching capacitor bank is not only used for limiting the current and inhibiting electromagnetic interference, but also used for adjusting the rising rate of the output voltage of the high-voltage pulse power supply and controlling the characteristic physical parameters of the discharge plasma. The structure of the dynamic switching capacitor bank is shown in fig. 5, wherein 501 represents a switchable capacitor, and 502 represents a high-voltage solid-state switch.
In this embodiment, the high-voltage pulse power supply 7 is implemented by adopting the following preferred scheme:
output parameters of the high-voltage pulse power supply: the pulse width is 0.1-100 mus, the rising edge is less than 1 mus, the frequency is 0.1-40kHz, and the voltage amplitude is 0-20 kV. The high voltage parameter of the high voltage pulse power supply is flexible and adjustable, which is beneficial to generating uniform high density micro plasma with high efficiency.
In this embodiment, the microplasma array is confined in a microperforation array, the microplasma having an electron density of at least 1015cm-3The diameter is 10-100 μm, the length is at least 0.5cm, and the arrangement shape is the same as the micro through hole array.
The bandwidth of the tunable terahertz band-stop filter formed by the microplasma array is 0.1-0.4THz, the attenuation in the band-stop range is at least 20dB, and the tunable range of the band-gap center frequency is at least 20 GHz. By changing physical characteristic parameters of the microplasma array, terahertz waves with the frequency within the range of 0.1-1THz can be selectively filtered and tuned. And whether the micro plasma array is generated or not is controlled, and the tunable function of the tunable terahertz band-stop filter can be controlled to be turned on or off.
Specific parameters of the tunable terahertz band-stop filter are given below:
the dielectric container is made of quartz, and is square in shape, and has dimensions of 1.5cm (length) x 1.5cm (width) x 2cm (height). The diameter of the micro through holes is 100 micrometers, the distance between every two adjacent through holes is 200 micrometers, the length of each through hole is 1cm, and a 60X 60 through hole array is formed. The medium container contains sealed working gas helium with pressure of 100 kPa. The high-voltage electrode 1 is made of stainless steel and is square, the cross section of the high-voltage electrode is slightly smaller than that of the dielectric container, the thickness of the high-voltage electrode is 0.6cm, and the edge of the high-voltage electrode is an arc chamfer so that an electric field is uniform. The ground electrode is made of stainless steel, is square, has a cross section slightly larger than the bottom of the medium container, and has a thickness of 0.2 cm. The resistor is a high-voltage non-inductive resistor, the resistance value is 5k omega, and the power is 500W. 10 switchable high-voltage non-inductive capacitors in the dynamic switching capacitor bank are all put into use, and the equivalent capacitance value is 10 mu F.
When the high-voltage pulse power supply works, the output parameters of the high-voltage pulse power supply are 0.1 mu s of pulse width, 0.5 mu s of rising edge, 4kHz of frequency and adjustable output voltage amplitude of 0-20kV, terahertz waves vertically enter from one side of the micro plasma array, and the terahertz waves are emitted from the other side after band-stop filtering. When the output voltage is 0, the helium is not ionized, and the micro through hole is filled with the helium. The helium gas was ionized with the increase of the output voltage, and the electron density of the plasma was 10 when the output voltage was 10kV15cm-3(ii) a The electron density of the plasma is 2 x 10 at an output voltage of 12kV15cm-3. Due to the action of the ground electrode for enhancing the electric field, plasma is introduced and generated in the micro through holes to form a micro plasma array, the micro plasma array is restrained in the micro through hole array, the diameter is 100 micrometers, the length is 1cm, and the arrangement shape is the same as that of the micro through holes. As shown in fig. 6, the bandwidth of the tunable terahertz band-stop filter reaches 0.12THz, the maximum attenuation in the stop band range reaches 180dB, and the tuning range of the stop band center frequency is 30 GHz. Similarly, other output parameters of the high-voltage pulse power supply, such as pulse width, rising edge, frequency and the like, can be adjusted to change the plasma electron density, so that the stop band characteristic of the tunable terahertz band-stop filter is changed.
The embodiments are only for illustrating the technical idea of the present invention, and the technical idea of the present invention is not limited thereto, and any modifications made on the basis of the technical scheme according to the technical idea of the present invention fall within the scope of the present invention.
Claims (10)
1. A tunable terahertz band-stop filter is characterized in that: the device comprises a high-voltage electrode, a dielectric container, a ground electrode, a dynamic switching capacitor bank, a resistor and a high-voltage pulse power supply; the bottom of the medium container is provided with a micro through hole array which is arranged periodically, the upper surface of the high-voltage electrode is in close contact with the inner surface of the top of the medium container, a gap is reserved between the lower surface of the high-voltage electrode and the upper end of the micro through hole array, the surface of the ground electrode is in close contact with the outer surface of the bottom of the medium container, so that the lower end of the micro through hole array is sealed, the medium container is filled with working gas, the resistor and the dynamic switching capacitor bank are connected in parallel, one end of the resistor and the dynamic switching capacitor bank which are connected in parallel is connected to the output end of a high-voltage pulse power; after high-voltage pulses are applied to the high-voltage electrodes, working gas in the dielectric container is ionized to generate discharge plasma and uniformly fill the micro through hole array, so that a micro plasma array is formed, terahertz waves are vertically incident from one side of the micro plasma array, and the terahertz waves are emitted from the other side of the micro plasma array after being subjected to band-stop filtering.
2. The tunable terahertz band-stop filter of claim 1, wherein: the medium container is made of quartz, ceramic or polyethylene; the media container is generally square and has dimensions of at least 1.5cm long by 1.5cm wide by 2cm high.
3. The tunable terahertz band-stop filter of claim 1, wherein: the diameter of each micro-through hole of the micro-through hole array is 10-100 mu m, the distance between every two adjacent micro-through holes is 100-2000 mu m, the length of each micro-through hole is at least 0.5cm, and the arrangement shape of each micro-through hole is square or trapezoid.
4. The tunable terahertz band-stop filter of claim 1, wherein: the high-voltage electrode is made of stainless steel, aluminum or copper, is a square bare electrode, has a cross section slightly smaller than that of the medium container, is 0.2-1cm thick, has an arc chamfer at the edge, and has a distance of 0.1-1cm between the lower surface of the high-voltage electrode and the upper end of the micro through hole array.
5. The tunable terahertz band-stop filter of claim 1, wherein: the ground electrode is made of stainless steel, aluminum or copper, is square, has a cross section slightly larger than the bottom of the medium container, and has a thickness of 0.1-0.3 cm.
6. The tunable terahertz band-stop filter of claim 1, wherein: the working gas is helium, neon, argon or a mixed gas of at least one of the gases and other simple substances, and the working pressure is 1-100 kPa.
7. The tunable terahertz band-stop filter of claim 1, wherein: the resistor is a high-voltage non-inductive resistor, the resistance value of the resistor is 1-100k omega, and the power of the resistor is 50-500W.
8. The tunable terahertz band-stop filter of claim 1, wherein: the dynamic switching capacitor bank comprises a plurality of switchable capacitors connected in parallel, and each switchable capacitor is connected in series with a high-voltage solid-state switch; the switchable capacitors are 10 high-voltage non-inductive capacitors, the capacitance value of each switchable capacitor is 1 muF, and the rated voltage is 20 kV; the high-voltage solid-state switch is a silicon controlled thyristor, the rated voltage of the high-voltage solid-state switch is 1-20kV, and the on-off time of the high-voltage solid-state switch is less than 15 mu s; the number of switchable capacitors of the access circuit is controlled by the high-voltage solid-state switch, so that the equivalent capacitance value is changed within the range of 1-10 mu F.
9. The tunable terahertz band-stop filter of claim 1, wherein: the output parameters of the high-voltage pulse power supply are as follows: the pulse width is 0.1-100 mus, the rising edge is less than 1 mus, the frequency is 0.1-40kHz, and the voltage amplitude is 0-20 kV.
10. The tunable terahertz band-stop filter of claim 1, wherein: the microplasma array is confined in the microperforation array, the microplasma having an electron density of at least 1015cm-3The diameter is 1-100 μm, the length is at least 0.5cm, the arrangement shape is the same as that of the micro through hole array, and the working pressure is 1-100 kPa; the characteristic physical parameters of the micro plasma array are changed by adjusting the parameters, the resistance, the dynamic switching capacitor bank and the working gas components of the high-voltage pulse power supply;
the bandwidth of the tunable terahertz band-stop filter is 0.1-0.4THz, the attenuation in the band-stop range is at least 20dB, and the tunable range of the band-gap center frequency is at least 20 GHz; the characteristic physical parameters of the micro-plasma array are controlled, so that the terahertz band-stop filtering characteristic is regulated and controlled.
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| CN114205983A (en) * | 2021-11-09 | 2022-03-18 | 中国人民解放军军事科学院国防工程研究院工程防护研究所 | Measuring system and method for diagnosing plasma electron density |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007000989A1 (en) * | 2005-06-27 | 2007-01-04 | Kyoto University | Electromagnetic wave control element, electromagnetic wave control device, electromagnetic wave control plasma, and electromagnetic wave control method |
| CN105594122A (en) * | 2013-09-30 | 2016-05-18 | Mks韩国株式会社 | Impedance matching method and impedance matching system |
| CN106058390A (en) * | 2016-07-08 | 2016-10-26 | 桂林电子科技大学 | Terahertz band-stop filter for adjustment through electrostatic driving |
| CN108376817A (en) * | 2018-02-06 | 2018-08-07 | 雄安华讯方舟科技有限公司 | Terahertz bandstop filter unit based on Meta Materials and Terahertz bandstop filter |
-
2019
- 2019-10-23 CN CN201911010577.XA patent/CN110767964A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007000989A1 (en) * | 2005-06-27 | 2007-01-04 | Kyoto University | Electromagnetic wave control element, electromagnetic wave control device, electromagnetic wave control plasma, and electromagnetic wave control method |
| CN105594122A (en) * | 2013-09-30 | 2016-05-18 | Mks韩国株式会社 | Impedance matching method and impedance matching system |
| CN106058390A (en) * | 2016-07-08 | 2016-10-26 | 桂林电子科技大学 | Terahertz band-stop filter for adjustment through electrostatic driving |
| CN108376817A (en) * | 2018-02-06 | 2018-08-07 | 雄安华讯方舟科技有限公司 | Terahertz bandstop filter unit based on Meta Materials and Terahertz bandstop filter |
Non-Patent Citations (1)
| Title |
|---|
| LEE W. CROSS ET AL.: "Development of Large-Area Switchable Plasma Device for X-Band Applications", 《IEEE TRANSACTIONS ON PLASMA SCIENCE》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114205983A (en) * | 2021-11-09 | 2022-03-18 | 中国人民解放军军事科学院国防工程研究院工程防护研究所 | Measuring system and method for diagnosing plasma electron density |
| CN114205983B (en) * | 2021-11-09 | 2024-05-14 | 中国人民解放军军事科学院国防工程研究院工程防护研究所 | Measurement system and method for diagnosing plasma electron density |
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