CN110265854B - Light guide self-adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser - Google Patents
Light guide self-adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser Download PDFInfo
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Abstract
The invention discloses a light guide self-adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser, and aims to solve the problems that a microwave generation device in the existing microwave generation method is large in size, single in frequency point and difficult to adjust frequency. The technical scheme is that a light guide self-adaptive narrow-spectrum microwave generator which consists of a high-energy pulse cluster laser, a voltage source, a wide-band-gap semiconductor device and a radiation output assembly is constructed; the high-energy pulse cluster laser outputs high-energy pulse cluster laser with adjustable pulse cluster repetition frequency, pulse width, envelope waveform and GHz high-frequency pulse repetition frequency to the wide-band gap semiconductor device; the voltage source is a solid pulse forming line which generates pulse voltage to act on the wide band gap semiconductor device; the wide band gap semiconductor device generates a high-frequency electric signal under the simultaneous action of laser and voltage; the radiation output assembly radiates the high-frequency electric signal and outputs a microwave signal. The invention can solve the problems of large volume, single frequency point and difficult frequency adjustment of microwave generating devices.
Description
Technical Field
The invention relates to a high-power microwave generation method, in particular to a narrow-spectrum microwave generation method based on high-repetition-frequency pulse laser and a wide-band-gap light guide semiconductor.
Background
The high-power microwave degrades or loses efficacy through strong electromagnetic radiation, interference, disturbance and damage of an electronic information system of the equipment, can effectively improve the information countermeasure capacity, and has the characteristics of light speed attack, soft killing, surface killing, small collateral damage and the like.
In order to cope with the increasingly complex and new waveform and new spectrum of the threatening target electromagnetic environment in the information field, a novel adaptive energy-oriented microwave generation method with flexibly adjustable parameters needs to be developed urgently. The traditional high-power microwave generation method is based on a pulse power device and a relativistic electric vacuum device, has been developed for 40-50 years, and the output microwave parameters are usually fixed, and the frequency point is single or difficult to adjust. This is because the relativistic vacuum device generally has a narrow operating frequency range and is a mechanical structure, and adjustment is difficult. Furthermore, the electrovacuum devices need to be operated in a vacuum environment, resulting in bulky microwave-generating devices designed using this approach.
The generation of microwaves by utilizing the photoconductive semiconductor is a new direction for more researches in recent years, and at present, the photoconductive semiconductor is used as a quick cut-off switch in the published reports at home and abroad, namely, the quick conduction property of the photoconductive semiconductor switch is utilized to generate a pulse voltage with a steep front edge, and then the pulse voltage is radiated to generate a broadband or ultra-wideband signal, and the photoconductive semiconductor in the reports has the function similar to a switch oscillator. For example, the document "photonic Switch-Based HPM for air gun Counter-IEDs Applications" (high power microwave generator for Airborne anti-explosive device Based on Photoconductive Switch), IEEE transactions on Plasma Science (IEEE Plasma scientific bulletin), 2014, 42, volume 5, pages 1285-1294 "describes a method for manufacturing a broadband microwave signal generator by using the conduction characteristic of Photoconductive Switch, the method cuts off dc bias by using the fast conduction characteristic of Photoconductive Switch to generate a steep rising edge electrical signal, and then generates a broadband signal by radiation of broadband antenna; because the energy of the broad spectrum is dispersed on the frequency, the low-frequency component is limited by the size of the antenna, and the directional radiation is relatively difficult, the generated microwave power is low in equivalent radiation power, the generated microwave power is low, and the microwave signal output by the scheme is in the hundreds of watts magnitude.
Disclosure of Invention
The invention aims to solve the technical problems that a microwave generating device used in the existing method for generating microwaves by utilizing an electric vacuum device is large in size, single in frequency point and difficult to adjust frequency, and provides a light guide self-adaptive narrow-spectrum microwave generating method based on high-repetition-frequency pulse laser. The linear working mode of the wide-band-gap photoconductive semiconductor device under high voltage and large current levels is utilized (in the linear working mode, a photon is injected into the device to generate a pair of hole electron pairs in the device, the electrons move under the action of an electric field generated by an external voltage to form a current, the current generated by the mode has the same waveform and frequency with the incident laser, and under the external bias voltage, the wide-band-gap photoconductive semiconductor device is irradiated by high-repetition-frequency laser to generate a high-frequency electric signal and radiate and output the high-frequency electric signal to generate a microwave signal.
The specific technical scheme of the invention comprises the following steps:
the method comprises the following steps of constructing a light guide self-adaptive narrow-spectrum microwave generator, wherein the microwave generator consists of a circuit modulation module and a light path modulation module, the light path modulation module is a high-energy pulse cluster laser which can be used as a light guide device signal source of a microwave system, the high-energy pulse cluster laser is short, and the circuit modulation module consists of a voltage source, a wide-band-gap semiconductor device and a radiation output assembly. The high-energy pulse cluster laser and the wide-band-gap semiconductor device are connected by adopting optical fibers or optical waveguides.
The high-energy pulse cluster laser generates laser with adjustable pulse cluster repetition frequency, pulse width, envelope waveform and GHz high-frequency pulse repetition frequency, and the laser is input into the wide-bandgap semiconductor device through an optical fiber or an optical waveguide.
The high-energy pulse cluster laser consists of a laser seed source, an optical fiber preamplifier, an optical modulation module, a high-frequency signal source, a synchronous control circuit, an optical fiber amplifier and 2 waveform signal plates capable of being edited (namely a first waveform signal plate capable of being edited and a second waveform signal plate capable of being edited). The optical modulation module consists of an acousto-optic modulator and an electro-optic intensity modulator, and the acousto-optic modulator and the electro-optic intensity modulator are connected in a mode of welding tail fibers of the device through optical fibers. The output end of the laser seed source is connected with the input end of the optical fiber preamplifier, the output end of the optical fiber preamplifier is connected with the optical fiber input end of the optical modulation module (namely the optical fiber input end of the acousto-optic modulator), the output end of the optical modulation module (namely the optical fiber output end of the electro-optic intensity modulator) is connected with the input end of the optical fiber amplifier in an optical fiber fusion mode, and the output end of the optical fiber amplifier is fused with an end cap or an isolator. The signal input end of the laser seed source is connected with the signal output end of the first editable waveform signal plate through a coaxial signal line; the external trigger signal input end of the first editable waveform signal plate is connected with the first output end of the synchronous control circuit through a coaxial signal line; the external trigger signal input end of the second editable waveform signal plate is connected with the second output end of the synchronous control circuit through a coaxial signal line, and the signal output end of the second editable waveform signal plate is connected with the signal input end of the acousto-optic modulator through a coaxial signal line. The radio frequency signal input end of the electro-optical intensity modulator is connected with the signal output end of the high-frequency signal source through a coaxial signal wire.
The synchronization control circuit provides a synchronization timing signal for the first editable waveform signal board and the second editable waveform signal board. The first synchronous time sequence signal output by the first output end of the synchronous control circuit is used for triggering the first editable waveform signal plate, and the second synchronous time sequence signal output by the second output end is used for triggering the second editable waveform signal plate. The 2 paths of synchronous timing signals are required to be standard digital trigger signals with adjustable pulse width, adjustable repetition frequency and amplitude of 2.5-5V, and the time jitter between the pulses of the first synchronous timing signal and the second synchronous timing signal is less than 5 ns.
The first editable waveform signal plate is in an external trigger working mode, when a first synchronous time sequence signal is received from the synchronous control circuit, the width of an electric pulse is edited according to the requirement of the microwave system light guide device on the pulse width of a signal source, and a rectangular signal with adjustable repetition frequency and pulse width is sent to the laser seed source.
The laser seed source adopts a semiconductor pulse laser seed source, and the semiconductor pulse laser seed source can generate laser seed pulses with flexibly adjustable pulse repetition frequency, pulse width, amplitude and time domain waveform according to rectangular signals output by the editable waveform signal board. The central wavelength range of the semiconductor pulse laser seed source is required to be 1030 nm-1065 nm, the pulse width range is required to be 10 ns-200 ns, and the repetition frequency range is required to be 10 Hz-200 kHz.
The optical fiber preamplifier is used for improving the power of laser seed pulses generated from a laser seed source and improving the signal-to-noise ratio of the high-energy pulse cluster laser. The optical fiber preamplifier consists of M (M is more than or equal to 1) stages of optical fiber amplifiers. The average power and peak power of the output laser pulse of the fiber preamplifier are required to be less than or equal to the maximum bearing power of the electro-optical intensity modulator.
And the second editable waveform signal board is in an external trigger working mode, and sends a preset waveform electric signal to the acousto-optic modulator when receiving a second synchronous timing signal from the synchronous control circuit.
The gain saturation effects of the fiber pre-amplifier and the fiber amplifier may cause the amplified laser pulse waveform to be different from the input laser pulse waveform they receive, i.e., the amplified laser pulse waveform may be distorted. In order to be used as a signal source of a microwave system optical waveguide device, the invention needs to output rectangular envelope pulse cluster laser (namely, the optical fiber amplifier needs to output the rectangular envelope pulse cluster laser), so that the waveform of an input signal of the optical fiber amplifier needs to be preset, and the preset waveform electric signal is sent to an acousto-optic modulator through an editable waveform signal plate.
The acousto-optic modulator is an optical fiber coupling acousto-optic modulator, and the bandwidth is more than 100 MHz. On one hand, the acousto-optic modulator receives a preset waveform electric signal from the second editable waveform signal plate, modulates the optical pulse waveform output by the optical fiber preamplifier into a preset time domain waveform optical pulse, and sends the preset time domain waveform optical pulse to the electro-optic intensity modulator; on the other hand, the acousto-optic modulator cuts off continuous spontaneous radiation noise among the light pulses output by the optical fiber preamplifier.
The high-frequency signal source is used for providing a GHz-level high-frequency sinusoidal signal with flexibly adjustable frequency for the electro-optical intensity modulator. The high-frequency signal source can be any one of a voltage-controlled frequency-variable oscillator, a frequency synthesizer, an arbitrary waveform generator and a function generator, and can also be a combination of any one of the voltage-controlled frequency-variable oscillator, the frequency synthesizer, the arbitrary waveform generator and the function generator and a power amplifier. The voltage output by the high-frequency signal source is required to be larger than the half-wave voltage of the electro-optical intensity modulator.
The working bandwidth of the electro-optical intensity modulator is more than or equal to 10 GHz. The electro-optical intensity modulator modulates a preset time domain waveform optical pulse received from the acousto-optic modulator into a preset envelope waveform pulse cluster laser according to a high-frequency sinusoidal signal output by a high-frequency signal source, so that the repetition frequency and the waveform of a high-frequency pulse in the preset envelope waveform pulse cluster laser are the same as those of a high-frequency sinusoidal signal received from the high-frequency signal source, and the modulated pulse cluster laser is sent to the optical fiber amplifier.
And the optical fiber amplifier amplifies the preset envelope waveform pulse cluster laser received from the electro-optical intensity modulator and outputs a rectangular envelope pulse cluster. The optical fiber amplifier consists of N (N is more than or equal to 2) stages of optical fiber amplifiers. The output end of the optical fiber amplifier is welded with an optical fiber end cap or an isolator, so that the damage of the end face return light to the high-energy pulse cluster laser is prevented.
The voltage source is a solid pulse forming line, and is connected with the electrode of the wide-band-gap semiconductor device by conductive silver paste to generate pulse voltage to act on the wide-band-gap semiconductor device.
The wide band gap semiconductor device is connected with the high-energy pulse cluster laser through an optical fiber or an optical waveguide, is connected with a voltage source through conductive silver paste, and is connected with the radiation output assembly through a coaxial line, and generates a high-frequency electric signal under the simultaneous action of laser and voltage, and outputs the high-frequency electric signal to the radiation output assembly.
The wide bandgap semiconductor device is composed of four parts, i.e. a semiconductor wafer (i.e. a substrate), 2 electrodes, a filling material and a supporting structure, and the combination of the semiconductor wafer 8 and 2 electrode connections is the same as the structure of the "opposite-incident light type high power photoconductive switching device" described in the patent with application number 201710616299.7 of "opposite-incident light type high power photoconductive switching device and its manufacturing method": using a high-resistance semiconductor as a substrate material, preparing a transparent conducting layer on (the front surface of) the high-resistance semiconductor, preparing a high-voltage-resistant passivation layer with an anti-reflection effect on the transparent conducting layer, arranging a metal ring on the periphery of the high-voltage-resistant passivation layer to be tightly attached to the transparent conducting layer, and then connecting the high-voltage-resistant passivation layer with a hollow metal electrode (namely, the upper surface of the metal ring is tightly attached to the hollow metal electrode); the back of the high-resistance semiconductor is firstly prepared with a silver coating with high reflection performance and then is connected with a solid metal electrode. The hollow metal electrode and the solid metal electrode are two electrodes in the invention, and the rest parts (namely the substrate material, the transparent conducting layer, the high-voltage-resistant passivation layer, the metal ring and the silver coating) are the semiconductor wafer used in the invention. The semiconductor wafer may be a square sheet or a circular sheet, and has a thickness of 0.01mm to 10mm, a side length of 1mm to 50mm in the case of the square sheet, and a diameter of 1mm to 50mm in the case of the circular sheet. The substrate material of the semiconductor wafer, namely the high-resistance semiconductor selection wide band gap SiC material, such as 4H-SiC or 6H-SiC material, has the withstand voltage requirement of 3-4 MV/cm, and the recombination time of SiC crystal carriers is less than 1 ns. The hollow metal electrode and the solid metal electrode can be made of stainless steel or brass; the ratio of the diameter of the hollow metal electrode and the solid metal electrode to the side length or the diameter of the semiconductor wafer is kept between 1 and 1.5; the hollow metal electrode and the solid metal electrode are connected with the semiconductor wafer by adopting conductive silver adhesive for bonding, and the silver adhesive is solidified after baking. The supporting structure is a rectangular uncovered box processed by polytetrafluoroethylene materials, the hollow metal electrode penetrates through the first side surface of the supporting structure, one end of the hollow metal electrode is bonded with the first surface of the semiconductor wafer, and the other end of the hollow metal electrode is connected with a voltage source; one end of the solid metal electrode is adhered to the second surface (the surface opposite to the first surface) of the semiconductor wafer, and the other end of the solid metal electrode penetrates through the second side surface of the supporting structure and is connected with a voltage source; the semiconductor chip 8, the hollow metal electrode, the solid metal electrode and the supporting structure are filled with filling materials, the filling materials are required to completely cover the semiconductor chip, the hollow metal electrode and the solid metal electrode, the average withstand field strength of the filling materials 100 is required to be more than or equal to 40kV/mm, when the light wavelength is 200 nm-1200 nm, the transmittance of light is more than 99%, and the filling materials are preferably epoxy resin.
The voltage source is a solid state pulse forming line. The voltage-resistant range of the solid pulse forming line is the same as that of the wide-band gap semiconductor device, and the impedance of the solid pulse forming line is the same as the minimum resistance of the wide-band gap semiconductor device in a conduction state under laser irradiation. The solid-state pulse forming line is of a three-flat-plate structure and is stacked together according to a metal plate-medium-metal plate structure. The medium has a high energy storage density of>1J/cm3) The metal plate is made of silver. The connection mode of the voltage source and the wide band gap semiconductor device is as follows: the wide band gap semiconductor device comprises two electrodes, a middle metal plate and an upper metal plate, wherein the middle metal plate and the upper metal plate can be respectively connected with a voltage source, and the two electrodes can also be connected with the middle metal plate and the lower metal plate of the voltage source.
The radiation output component is a flat broadband radiation horn matched with the impedance of a voltage source, is connected with the wide band gap semiconductor device through an SMA (miniature version A) coaxial line, radiates a high-frequency electric signal output by the wide band gap semiconductor device and generates a microwave signal to be output.
Secondly, the high-energy pulse cluster laser generates high-energy pulse cluster laser and outputs the high-energy pulse cluster laser to the wide-band-gap semiconductor device, and the repetition frequency, the pulse width, the envelope waveform and the GHz high-frequency pulse repetition frequency of the high-energy pulse cluster laser can be tuned, and the method comprises the following steps:
2.1, the synchronous control circuit outputs 2 paths of digital signals with adjustable repetition frequencies;
2.2, the first editable waveform signal plate is triggered by a first path of synchronous signal output by the synchronous control circuit, the electric pulse width of the first editable waveform signal plate is edited according to the parameter requirement of the microwave system light guide device on the pulse width of the signal source, and a rectangular signal with adjustable pulse width is sent to the laser seed source;
2.3, the laser seed source receives the rectangular signal with adjustable pulse width output by the first editable waveform signal plate to generate rectangular light pulse with adjustable pulse width, and the repetition frequency and the pulse width of the light pulse are both adjustable;
2.4, amplifying the energy of the rectangular optical pulse output by the laser seed source to be not more than the maximum bearable power of the electro-optic intensity modulator by using an optical fiber preamplifier so as to improve the signal-to-noise ratio, wherein the waveform of the output laser pulse is characterized in that the waveform is distorted due to the gain saturation effect;
and 2.5, the second editable waveform signal plate is triggered by the synchronous control circuit to output a second path of synchronous signal, and a rectangular electric signal with the same pulse width as the first editable waveform signal plate is output.
2.6, the acousto-optic modulator receives a rectangular electric signal with the same pulse width as that of the first editable waveform signal plate from the second editable waveform signal plate, namely, the laser pulse waveform output by the optical fiber preamplifier is not changed, and the laser pulse with the unchanged time domain waveform is sent to the electro-optic intensity modulator;
2.7, outputting a high-frequency sinusoidal signal with flexibly adjustable GHz level frequency by a high-frequency signal source;
2.8, the electro-optic intensity modulator modulates the laser pulse of the unchanged time domain waveform received from the acousto-optic modulator into pulse cluster laser with the same envelope waveform according to the high-frequency sinusoidal signal received from the high-frequency signal source, so that the repetition frequency and the waveform of the high-frequency pulse in the pulse cluster are the same as the high-frequency sinusoidal signal received from the high-frequency signal source, and the pulse cluster laser is sent to the optical fiber amplifier;
2.9, testing the input pulse cluster laser envelope waveform, the output pulse cluster laser envelope waveform and the pulse cluster laser energy of the optical fiber amplifier, and calculating the instantaneous power P of the time-containing input pulse cluster according to the pulse cluster energy, the input pulse cluster envelope waveform and the output pulse cluster envelope waveformin(t and instantaneous power P of the timed output pulse trainout(t) extracting an envelope waveform by introducing a Matlab program (including a random parallel gradient descent algorithm), using the envelope waveform as an initial input/output waveform, calculating a time-dependent gain curve, and fitting the curve of the formula (1) to obtain an initial gain G0And putSaturated energy flow E of the amplifiersatAnd (4) parameters. Then setting the rectangular envelope waveform as a target output envelope waveform, and operating a Matlab program to obtain a preset waveform electric signal; the preset waveform electric signal is obtained by adopting the following method:
2.9.1, the output signal of the second editable waveform signal plate is set to be rectangular, namely the second editable waveform signal plate output signal enables the acousto-optic modulator not to change the laser pulse waveform output by the optical fiber preamplifier. Under the condition, a high-speed oscilloscope, a photoelectric detector and a power meter are used for testing the input pulse cluster envelope waveform, the output pulse cluster envelope waveform and the pulse cluster energy E of the optical fiber amplifierout(t) calculating the instantaneous power P of the time-containing input pulse cluster according to the pulse cluster energy, the envelope waveform of the input pulse cluster and the envelope waveform of the output pulse clusterin(t) and instantaneous power P of the timed output pulse packetout(t), t is time.
2.9.2, instantaneous power P of the obtained time-containing input pulse clusterin(t) and instantaneous power P of the timed output pulse packetoutAnd (t) introducing a Matlab program, extracting an envelope waveform, and using the envelope waveform as an initial input waveform and an initial output waveform when a precompensation waveform is calculated by a random parallel gradient descent algorithm.
2.9.3 by formula g (t) Pout(t)/Pin(t) calculating to obtain a time-dependent gain function G (t), according to a gain formula (1) in an amplifier F-N model,
G(t)=1+(G0-1)exp[-Eout(t)/Esat](1)
curve fitting to obtain initial gain G0Saturated power flow E of sum amplifiersatA parameter;
2.9.4, setting the rectangular envelope waveform as a target output envelope waveform of a Matlab program, and normalizing the target output rectangular envelope waveform;
2.9.5, running the MAT L AB program to get the preset waveform.
And 2.10, editing the output pulse waveform of the second editable waveform signal plate according to the preset waveform electric signal, so that the second editable waveform signal plate outputs the preset waveform electric signal to the acousto-optic modulator.
2.11, the acousto-optic modulator receives the preset waveform electric signal from the second editable waveform signal board, and modulates the optical pulse waveform output by the optical fiber preamplifier into a preset time domain waveform optical pulse, wherein the waveform is the preset waveform obtained through the calculation of the steps, so that the envelope waveform of a pulse cluster output by the optical fiber amplifier is rectangular, and the preset time domain waveform optical pulse is sent to the electro-optic intensity modulator.
2.12, the electro-optical intensity modulator modulates the preset time domain waveform light pulse received from the acousto-optical modulator into preset envelope waveform pulse cluster laser according to the high-frequency sinusoidal signal received from the high-frequency signal source, wherein the preset envelope waveform pulse cluster laser is characterized by a pulse cluster form, and the pulse cluster envelope is a preset waveform, so that the repetition frequency and the waveform of the high-frequency pulse in the preset envelope waveform pulse cluster laser are the same as the high-frequency sinusoidal signal received from the high-frequency signal source, and the modulated pulse cluster laser is sent to the optical fiber amplifier;
and 2.13, amplifying the preset envelope waveform pulse cluster laser received from the electro-optical intensity modulator by using an optical fiber amplifier, and outputting high-energy pulse cluster laser to the wide-bandgap semiconductor device, wherein the repetition frequency, the pulse width, the envelope waveform and the GHz high-frequency pulse repetition frequency of the pulse cluster laser can be tuned.
And thirdly, a voltage source (pulse forming line) generates pulse voltage, and the high-energy pulse cluster laser and the pulse voltage act on the wide-bandgap semiconductor device simultaneously. Namely, the voltage source applies the voltage only when the high-energy pulse cluster laser starts to irradiate the semiconductor, and when the light finishes irradiating, the voltage loading is finished correspondingly.
The high-energy pulse cluster laser irradiates the wide-band-gap semiconductor device from the hollow metal electrode by using the optical waveguide or the optical fiber, the resistance of the wide-band-gap semiconductor device is changed (here, the wide-band-gap photoconductive semiconductor device is substantially equivalent to a variable resistor, and the internal resistance of the wide-band-gap photoconductive semiconductor device changes according to the change of the light intensity of the laser), the resistance of the wide-band-gap semiconductor device changes linearly along with the light intensity of the high-energy pulse cluster laser, the light intensity becomes larger, and the resistance is reduced.
The wide band gap semiconductor device modulates pulse voltage into high frequency electric signal with the same frequency as the high energy pulse cluster laser (the wide band gap semiconductor device works in linear mode, namely a photon enters the device to generate a pair of hole electron pairs, electrons move under the action of an electric field generated by an external voltage to generate current, the current generated by the mode and the incident laser have the same waveform and frequency, the working mode does not change the pulse voltage U in the modulation process according to ohm law, the resistance R changes in inverse proportion along with the light intensity, so the current I output by the wide band gap semiconductor device and the light intensity change in positive proportion, the periodically changing light intensity (namely the high energy pulse cluster laser) generates periodically changing current, the frequency of the periodically changing current and the frequency of the periodically changing current are the same), and the modulated high frequency electric signal is sent to the radiation output assembly.
Fourthly, the radiation output assembly radiates high-frequency electric signals: the radiation output component receives the high-frequency electric signal from the wide-band-gap semiconductor device, radiates the high-frequency electric signal and generates a microwave signal output.
The light guide self-adaptive narrow-spectrum microwave generator constructed in the first step of the invention has the characteristics of modularization, solid state and intellectualization.
Compared with the traditional high-power microwave generation method based on pulse power and relativistic vacuum tubes, the method has the following technical characteristics:
1. the output microwave frequency is flexible, the parameters are flexible and adjustable at will, and the intelligent microwave oven has the natural advantage of intellectualization. In the linear mode of the wide band gap semiconductor device, a photon is injected into the SiC crystal to generate an electron (carrier), so that the current in the SiC crystal is completely controlled by the high-energy pulse cluster laser, and the semiconductor device can respond to a GHz input optical signal and output a GHz electric signal because the carrier in the SiC crystal has the recombination time of less than 1 ns. The modulation frequency of the electric signal output by the wide band gap semiconductor device is consistent with that of the high-energy pulse cluster laser input into the device, the output frequency mainly depends on the modulation frequency of the high-energy pulse cluster laser, and the device is not similar to a traditional high-power microwave device which only corresponds to one frequency point. The invention can realize the modulation of 10 times of the microwave frequency by changing the modulation frequency of the high-energy pulse cluster laser (see 2.7 steps, the high-frequency signal source outputs a high-frequency sinusoidal signal with flexibly adjustable GHz-level frequency, and the modulation frequency of the high-energy pulse cluster laser can be changed by adjusting the output frequency of the high-frequency signal source), namely the modulation frequency is adjustable from 0.1GHz to 1GHz, and the upper limit of the frequency modulation is limited by the recombination time of SiC crystal carriers.
2. The microwave generated by the invention has high repetition frequency capability, the repetition frequency of the invention depends on the repetition frequency of the high-energy pulse cluster laser and is only limited by the supply power of the equipment (such as a armored car, a naval vessel and a fighter) carrying the invention. The repetition frequency of the existing electric vacuum scheme is only dozens to 100Hz, and the range of the repetition frequency of the high-energy pulse cluster laser is 10Hz to 200kHz, so that the invention can realize higher repetition frequency.
3. The light guide self-adaptive narrow-spectrum microwave generator constructed in the first step of the invention has high reliability, all units are solid, and the system does not need a gas spark switch, a vacuum electron beam and accessory equipment thereof in the traditional high-power microwave system, so the space utilization efficiency is high, the structure is compact, the volume is small, the reliability is higher, and the platform adaptability is stronger.
4. The light guide self-adaptive narrow-spectrum microwave generator manufactured in the first step of the invention has the advantages of lighter weight and smaller volume, and when the generator is carried on equipment, the platform can be simultaneously allowed to be added with an additional energy storage system to enhance the attack force.
5. The wide band gap semiconductor device works in a linear mode, namely, a photon enters the device to generate a pair of hole electron pairs, and the electrons move under the action of an electric field generated by an external voltage so as to generate current; this mode produces a current having a waveform and frequency that is consistent with the incident laser light. Therefore, the invention can use the photoconductive semiconductor as a 'photoconductive amplifier' through high-frequency light regulation, generates a narrow-spectrum microwave signal (when the pulse width of the microwave signal is 100ns, the spectrum width is in the order of 10MHz, or the relative bandwidth is in the order of 1 percent), has better directional emission, and generates higher microwave energy.
6. The wide-band-gap semiconductor device is filled with the filling material, so that the air surface flashover breakdown is avoided, the withstand voltage of the semiconductor device is improved, and the power capacity of the microwave generator is also improved.
The invention has wide application prospect in the fields of new generation high power microwave technology, exploration and attack integrated radar and cognitive electronic warfare.
Drawings
FIG. 1 is a general flow diagram of the present invention;
FIG. 2 is a logic structure diagram of a light guide adaptive narrow spectrum microwave generator constructed in the first step of the present invention;
fig. 3 is a schematic diagram of the overall structure of the high-energy pulse cluster laser in fig. 2.
Fig. 4 is a schematic diagram of the generation of the preset waveform electric signal. Wherein, fig. 4(a) is the input pulse cluster envelope waveform of the optical fiber amplifier 6, and fig. 4(b) is the output pulse cluster envelope waveform of the optical fiber amplifier 6; FIG. 4(c) is a normalized target output rectangular envelope waveform; FIG. 4(d) is a normalized preset waveform;
figure 5 is a block diagram of a wide bandgap semiconductor device;
fig. 6 is a schematic diagram of the connection of a wide bandgap semiconductor device, a tri-plate type pulse forming line and a radiation element.
Detailed Description
FIG. 1 is a general flow diagram of the present invention; as shown in fig. 1, the present invention comprises the steps of:
firstly, a light guide self-adaptive narrow-spectrum microwave generator is constructed, as shown in fig. 2, the light guide self-adaptive narrow-spectrum microwave generator is composed of a circuit modulation module and a light path modulation module, wherein the light path modulation module is a high-energy pulse cluster laser which can be used as a microwave system light guide device signal source, and is called high-energy pulse cluster laser for short, and the circuit modulation module is composed of a voltage source 200, a wide band gap semiconductor device 400 and a radiation output component 300. The high-energy pulse cluster laser is connected with the wide bandgap semiconductor device 400 by an optical fiber or an optical waveguide.
The high-energy pulse cluster laser generates laser with adjustable pulse cluster repetition frequency, pulse width, envelope waveform and GHz high-frequency pulse repetition frequency, and the laser is input into the wide-bandgap semiconductor device through an optical fiber or an optical waveguide.
The high-energy pulse cluster laser is shown in fig. 3 and comprises a laser seed source 1, an optical fiber preamplifier 2, an optical modulation module 3, a high-frequency signal source 4, a synchronous control circuit 5, an optical fiber amplifier 6 and an editable waveform signal plate 7. The laser seed source 1, the optical fiber preamplifier 2, the optical modulation module 3 and the optical fiber amplifier 6 are connected by means of optical fiber fusion. The high-frequency signal source 4, the synchronous control circuit 5, the first editable waveform signal plate 71 and the laser seed source 1 are connected by coaxial cables, and the second editable waveform signal plate 72 and the acousto-optic modulator 31 are connected by coaxial cables.
The optical modulation module 3 is composed of an acousto-optic modulator 31 and an electro-optic intensity modulator 32, and the acousto-optic modulator 31 and the electro-optic intensity modulator 32 are connected in a mode of a fiber fusion device tail fiber. The output end of the laser seed source 1 is connected with the input end of the optical fiber preamplifier 2, the output end of the optical fiber preamplifier 2 is connected with the optical fiber input end of the optical modulation module 3 (namely, the optical fiber input end of the acousto-optic modulator 31), the output end of the optical modulation module 3 (namely, the optical fiber output end of the electro-optic intensity modulator 32) is connected with the input end of the optical fiber amplifier 6 in an optical fiber fusion mode, and the output end of the optical fiber amplifier 6 is fused with an end cap or an isolator. The signal input end of the laser seed source 6 is connected with the signal output end of the first editable waveform signal plate 71 through a coaxial signal line; the external trigger signal input end of the first editable waveform signal plate 71 is connected with the first output end of the synchronous control circuit 5 through a coaxial signal line; an external trigger signal input end of the second editable waveform signal plate 71 is connected with a second output end of the synchronous control circuit 5 through a coaxial signal line, and a signal output end of the second editable waveform signal plate 72 is connected with a signal input end of the acousto-optic modulator 31 through a coaxial signal line. The radio frequency signal input end of the electro-optical intensity modulator 32 is connected with the signal output end of the high frequency signal source 4 by a coaxial signal line.
The synchronization control circuit 5 supplies the first editable waveform signal board 71 and the second editable waveform signal board 72 with synchronization timing signals. The first synchronous timing signal outputted from the first output terminal of the synchronous control circuit 5 is used to trigger the first editable waveform signal board 71, and the second synchronous timing signal outputted from the second output terminal is used to trigger the second editable waveform signal board 72. The 2 paths of synchronous timing signals are required to be standard digital trigger signals with adjustable pulse width, adjustable repetition frequency and amplitude of 2.5-5V, and the time jitter between the pulses of the first synchronous timing signal and the second synchronous timing signal is less than 5 ns.
The first editable waveform signal plate 71 is in an external trigger working mode, and when receiving a first synchronous timing signal from the synchronous control circuit, the first editable waveform signal plate edits the width of an electric pulse according to the requirement of the microwave system light guide device on the pulse width of the signal source, and sends a rectangular signal with adjustable repetition frequency and pulse width to the laser seed source 1.
The laser seed source 1 adopts a semiconductor pulse laser seed source, and the semiconductor pulse laser seed source can generate laser seed pulses with flexibly adjustable pulse repetition frequency, pulse width, amplitude and time domain waveform according to rectangular signals output by the first editable waveform signal plate 71. The central wavelength range of the semiconductor pulse laser seed source 1 is required to be 1030 nm-1065 nm, the pulse width range is required to be 10 ns-200 ns, and the repetition frequency range is required to be 10 Hz-200 kHz.
The optical fiber preamplifier 2 is used for improving the power of laser seed pulses generated from a laser seed source and improving the signal-to-noise ratio of the high-energy pulse cluster laser. The optical fiber preamplifier 2 consists of M (M is more than or equal to 1) stages of optical fiber amplifiers. The average power and peak power of the laser pulse output by the fiber preamplifier 2 are required to be less than or equal to the maximum bearing power of the electro-optical intensity modulator.
The second editable waveform signal board 72 is in the external trigger operating mode, and sends the preset waveform electric signal to the acousto-optic modulator when receiving the second synchronous timing signal from the synchronous control circuit 5.
The acousto-optic modulator 31 is an optical fiber coupling acousto-optic modulator, and the bandwidth is larger than 100 MHz. On one hand, the acousto-optic modulator 31 receives the preset waveform electric signal from the second editable waveform signal plate 72, modulates the optical pulse waveform output by the optical fiber preamplifier 2 into a preset time domain waveform optical pulse, and sends the preset time domain waveform optical pulse to the electro-optic intensity modulator 32; on the other hand, the acousto-optic modulator 31 cuts off continuous spontaneous emission noise between the light pulses output by the fiber preamplifier 2.
The high-frequency signal source 4 is used for providing a GHz-level high-frequency sinusoidal signal with flexibly adjustable frequency for the electro-optical intensity modulator 32. The high frequency signal source 4 may be any one of a voltage controlled frequency variable oscillator, a frequency synthesizer, an arbitrary waveform generator, and a function generator, or may be a combination of any one of a voltage controlled frequency variable oscillator, a frequency synthesizer, an arbitrary waveform generator, and a function generator and a power amplifier. The high frequency signal source 4 is required to output a voltage greater than the half-wave voltage of the electro-optical intensity modulator 32.
The operating bandwidth of the electro-optic intensity modulator 32 is 10GHz or greater. The electro-optical intensity modulator 32 modulates the preset time domain waveform optical pulse received from the acousto-optical modulator 31 into preset envelope waveform pulse cluster laser according to the high-frequency sinusoidal signal output by the high-frequency signal source, so that the repetition frequency and the waveform of the high-frequency pulse in the preset envelope waveform pulse cluster laser are the same as the high-frequency sinusoidal signal received from the high-frequency signal source 1, and sends the modulated pulse cluster laser to the optical fiber amplifier 6.
The optical fiber amplifier 6 amplifies the preset envelope waveform pulse cluster laser received from the electro-optical intensity modulator and outputs a rectangular envelope pulse cluster. The optical fiber amplifier 6 is composed of N (N is more than or equal to 2) stages of optical fiber amplifiers. The output end of the optical fiber amplifier 6 is welded with an optical fiber end cap or an isolator to prevent the damage of the end face return light to the high-energy pulse cluster laser.
As shown in fig. 2, the voltage source 200 is a solid-state pulse forming line, and is connected to the electrodes of the wide bandgap semiconductor device 400 with a conductive silver paste to generate a pulse voltage to act on the wide bandgap semiconductor device 400.
The wide bandgap semiconductor device 400 is connected to the high-energy pulse cluster laser through an optical fiber or an optical waveguide, connected to a voltage source through a conductive silver paste, and connected to the radiation output module through a coaxial line, and generates a high-frequency electrical signal under the simultaneous action of laser and voltage, and outputs the high-frequency electrical signal to the radiation output module 300.
As shown in fig. 5, the wide bandgap semiconductor device 400 is composed of four parts, i.e., a semiconductor wafer 8 (i.e., a substrate), 2 electrodes, a filling material 100 and a supporting structure 101, wherein the semiconductor wafer 8 and the 2 electrodes are connected by using a high-resistance semiconductor as a substrate material, a transparent conductive layer is prepared on (the front surface of) the high-resistance semiconductor, a high-voltage-resistant passivation layer with an anti-reflection effect is prepared on the transparent conductive layer, and then a metal ring is prepared to connect the transparent conductive layer (i.e., a metal ring is arranged around the high-voltage-resistant passivation layer and tightly attached to the transparent conductive layer), and then the wide bandgap semiconductor device is connected to a hollow metal electrode 91 (i; the back side of the substrate is first prepared with a silver coating having high reflectivity and then connected to a solid metal electrode 92. The hollow metal electrode 91 and the solid metal electrode 92 are two electrodes in the present invention, and the rest (i.e., the substrate material, the transparent conductive layer, the high voltage-resistant passivation layer, the metal ring, and the silver plating layer) is the semiconductor wafer 8 used in the present invention. The semiconductor wafer 8 may be a square sheet or a circular sheet, and has a thickness of 0.01mm to 10mm, a side length of 1mm to 50mm in the case of the square sheet, and a diameter of 1mm to 50mm in the case of the circular sheet. The substrate material of the semiconductor wafer 8 is a wide band gap SiC material, such as 4H-SiC or 6H-SiC, the withstand voltage requirement is 3-4 MV/cm, and the recombination time of SiC crystal carriers is less than 1 ns. The hollow metal electrode 91 and the solid metal electrode 92 may be made of stainless steel or brass; the ratio of the diameter of the hollow metal electrode 91 and the solid metal electrode 92 to the side length or the diameter of the semiconductor wafer is kept between 1 and 1.5; the hollow metal electrode 91 and the solid metal electrode 92 are bonded to the semiconductor wafer by conductive silver paste, and the silver paste is cured by baking. The support structure 101 is a rectangular uncovered box made of polytetrafluoroethylene material, the hollow metal electrode 91 penetrates through the first side surface 1011 of the support structure 101, one end of the hollow metal electrode is adhered to the first surface 81 of the semiconductor wafer 8, and the other end of the hollow metal electrode is connected with a voltage source; one end of the solid metal electrode 92 is bonded to the second side 82 (the side opposite the first side 81) of the semiconductor wafer 8, and the other end passes through the second side 1012 of the support structure 101 and is connected to a voltage source; the filling material 100 is arranged among the semiconductor wafer 8, the hollow metal electrode 91, the solid metal electrode 92 and the supporting structure 101, the filling material 100 is required to completely cover the semiconductor wafer 8, the hollow metal electrode 91 and the solid metal electrode 92, the average withstand field strength of the filling material 100 is required to be more than or equal to 40kV/mm, when the light wavelength is 200 nm-1200 nm, the transmittance of the light is more than 99%, and the filling material is preferably epoxy resin.
As shown in fig. 6, the voltage source 200 is a solid-state pulse forming line. Of solid-state pulse-forming linesThe withstand voltage range is the same as that of the wide band gap semiconductor device 400, and the solid-state pulse forming line impedance is the same as the on-state minimum resistance of the wide band gap semiconductor device 400 under laser irradiation. The solid-state pulse forming line is of a three-flat-plate structure and is stacked together according to a metal plate-medium-metal plate structure. The medium has a high energy storage density of>1J/cm3) The metal plate is made of silver. The voltage source 200 and the wide bandgap semiconductor device 400 are connected in the following manner: the wide band gap semiconductor device 400 has the hollow metal electrode 91 and the solid metal electrode 92 connected to the middle metal plate 202 and the upper metal plate 201 of the voltage source 200, or both connected to the middle metal plate 202 and the lower metal plate 203 of the voltage source 200. (FIG. 6 shows a two-electrode voltage source 200 with a middle plate 202 and a lower plate 203)
The radiation output component is a flat broadband radiation horn 300 matched with the voltage source 200 in impedance, and is connected with the wide band gap semiconductor device 400 through an SMA (sub miniature version A) coaxial line, so that the high-frequency electric signal output by the wide band gap semiconductor device 400 is radiated to generate microwave signal output.
Secondly, the high-energy pulse cluster laser generates high-energy pulse cluster laser and outputs the high-energy pulse cluster laser to the wide band gap semiconductor device, and the method comprises the following steps:
2.1, the synchronous control circuit 5 outputs 2 paths of digital signals with adjustable repetition frequencies;
2.2, the first editable waveform signal plate 71 is triggered by the first path of synchronous signal output by the synchronous control circuit 5, the electric pulse width of the first editable waveform signal plate 71 is edited according to the parameter requirement of the wide-bandgap semiconductor device 400 on the pulse width of the signal source, and a rectangular signal with adjustable pulse width is sent to the laser seed source 1;
2.3, the laser seed source 1 receives the pulse width adjustable rectangular signal output by the first editable waveform signal plate 71 to generate a pulse width adjustable rectangular light pulse, and the repetition frequency and the pulse width of the light pulse are both adjustable;
2.4, the optical fiber preamplifier 2 amplifies the energy of the rectangular optical pulse output by the laser seed source 1 to be not more than the maximum bearable power of the electro-optical intensity modulator 32 so as to improve the signal-to-noise ratio, and the waveform of the output laser pulse is characterized in that the waveform is distorted due to the gain saturation effect;
2.5, the second editable waveform signal plate 72 is triggered by the synchronous control circuit to output a second path of synchronous signal, and outputs a rectangular electric signal with the same pulse width as that of the first editable waveform signal plate 71.
2.6, the acousto-optic modulator 31 receives the rectangular electric signal with the same pulse width as the first editable waveform signal plate 71 from the second editable waveform signal plate 72, namely, the laser pulse waveform output by the fiber preamplifier 2 is not changed, and sends the laser pulse with the unchanged time domain waveform to the electro-optic intensity modulator 32;
2.7, the high-frequency signal source 4 outputs a high-frequency sinusoidal signal with flexibly adjustable GHz level frequency;
2.8, the electro-optical intensity modulator 32 modulates the laser pulse of the unchanged time domain waveform received from the acousto-optic modulator 31 into pulse cluster laser with the same envelope waveform according to the high-frequency sinusoidal signal received from the high-frequency signal source 4, so that the repetition frequency and the waveform of the high-frequency pulse in the pulse cluster are the same as the high-frequency sinusoidal signal received from the high-frequency signal source 4, and sends the pulse cluster laser to the optical fiber amplifier 6;
2.9, testing the input pulse cluster laser envelope waveform, the output pulse cluster laser envelope waveform and the pulse cluster laser energy of the optical fiber amplifier 6, and calculating the instantaneous power P of the time-containing input pulse cluster according to the pulse cluster energy, the input pulse cluster envelope waveform and the output pulse cluster envelope waveformin(t and instantaneous power P of the timed output pulse trainout(t) introducing the Matlab program to extract an envelope waveform as an initial input/output waveform, calculating to obtain a time-dependent gain curve, and performing curve fitting according to the formula (1) to obtain an initial gain G0Saturated power flow E of sum amplifiersatAnd (4) parameters. Then setting the rectangular envelope waveform as a target output envelope waveform, and operating a Matlab program (including a random parallel gradient descent algorithm) to obtain a preset waveform electric signal;
as shown in fig. 4, the preset waveform electric signal is obtained by the following method:
2.9.1, the output signal of the second editable waveform signal board 72 is set to be rectangular, i.e., the output signal is set to be rectangularThe second editable waveform signal board 72 outputs a signal so that the acousto-optic modulator 31 does not change the waveform of the laser pulse output by the fiber preamplifier 2. Under the condition, the input pulse cluster envelope waveform, the output pulse cluster envelope waveform and the pulse cluster energy of the optical fiber amplifier 6 are tested by using a high-speed oscilloscope, a photoelectric detector and a power meter, and the instantaneous power P of the time-containing input pulse cluster is obtained by calculating the pulse cluster energy, the input pulse cluster envelope waveform and the output pulse cluster envelope waveformin(t) and instantaneous power P of the timed output pulse packetout(t)。
2.9.2, instantaneous power P of the obtained time-containing input pulse clusterin(t) and instantaneous power P of the timed output pulse packetout(t) introducing a Matlab program (including a stochastic parallel gradient descent optimization algorithm), extracting an envelope waveform, and calculating initial input and output waveforms of the pre-compensation waveform as the stochastic parallel gradient descent algorithm, for example, as shown in fig. 4(a), the input pulse cluster envelope waveform of the optical fiber amplifier 6 has an instantaneous power in watt on the ordinate and a time in nanosecond on the abscissa, and as shown in fig. 4(b), the output pulse cluster envelope waveform of the optical fiber amplifier 6 has an instantaneous power in kilowatt on the ordinate because the power is amplified by the optical fiber amplifier 6, and the time in nanosecond on the abscissa.
2.9.3 by formula g (t) Pout(t)/Pin(t) calculating to obtain a time-dependent gain function G (t), according to a gain formula (1) in an amplifier F-N model,
G(t)=1+(G0-1)exp[-Eout(t)/Esat](1)
curve fitting to obtain initial gain G0Saturated power flow E of sum amplifiersatA parameter;
2.9.4, setting the rectangular envelope waveform as the target output envelope waveform of the Matlab program, wherein the normalized target output rectangular envelope waveform is shown in fig. 4(c), the ordinate is the normalized value, the abscissa is time, and the unit is nanosecond;
2.9.5, running MAT L AB program to obtain the preset waveform, normalizing the preset waveform as shown in FIG. 4(d), the ordinate is the normalized value, the abscissa is time, and the unit is nanosecond.
2.10, editing the output pulse waveform of the second editable waveform signal plate 72 according to the preset waveform electric signal, so that the second editable waveform signal plate 72 outputs the preset waveform electric signal to the acousto-optic modulator 31.
2.11, the acousto-optic modulator 31 receives the preset waveform electrical signal from the second editable waveform signal board 27, modulates the optical pulse waveform output by the optical fiber preamplifier 2 into the preset time domain waveform optical pulse, which is characterized in that the waveform is the preset waveform obtained through the above steps, so that the envelope waveform of the pulse cluster output by the optical fiber amplifier 6 is rectangular, and sends the preset time domain waveform optical pulse to the electro-optic intensity modulator 32.
2.12, the electro-optical intensity modulator 32 modulates the preset time domain waveform light pulse received from the acousto-optic modulator 31 into preset envelope waveform pulse cluster laser according to the high-frequency sinusoidal signal received from the high-frequency signal source 4, wherein the preset envelope waveform pulse cluster laser is characterized by a pulse cluster form and the pulse cluster envelope is a preset waveform, so that the repetition frequency and the waveform of the high-frequency pulse in the preset envelope waveform pulse cluster laser are the same as the high-frequency sinusoidal signal received from the high-frequency signal source 4, and the modulated pulse cluster laser is sent to the optical fiber amplifier 6;
2.13, the optical fiber amplifier 6 amplifies the preset envelope waveform pulse cluster laser received from the electro-optical intensity modulator 32 and outputs high-energy pulse cluster laser to the wide-band gap semiconductor device, and the repetition frequency, the pulse width, the envelope waveform, the GHz high frequency and the pulse repetition frequency of the pulse cluster laser can be tuned.
In a third step, the voltage source 200 (i.e., the pulse forming line) generates a pulse voltage, and the high-energy pulse cluster laser and the pulse voltage are simultaneously applied to the wide bandgap semiconductor device 400. That is, the voltage source applies the voltage only when the high-energy pulse cluster laser starts to irradiate the semiconductor, and when the irradiation of the light is finished, the voltage loading is correspondingly finished.
The high-energy pulse cluster laser irradiates the wide band gap semiconductor device 400 from the hollow metal electrode 91 by using an optical waveguide or an optical fiber, the resistance of the wide band gap semiconductor device 400 is changed, the resistance of the wide band gap semiconductor device 400 changes linearly along with the light intensity of the high-energy pulse cluster laser, the light intensity is increased, and the resistance is reduced.
Meanwhile, the wide bandgap semiconductor device 400 modulates the pulse voltage into a high-frequency electrical signal having the same modulation frequency as the high-energy pulse cluster laser, and transmits the modulated high-frequency electrical signal to the radiation output assembly.
Fourthly, the radiation output assembly radiates high-frequency electric signals: the radiation output component receives the high-frequency electric signal from the wide-band-gap semiconductor, radiates the high-frequency electric signal and generates a microwave signal output.
Claims (16)
1. A light guide self-adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser is characterized by comprising the following steps:
the method comprises the following steps that firstly, a light guide self-adaptive narrow-spectrum microwave generator is constructed, wherein the light guide self-adaptive narrow-spectrum microwave generator consists of a circuit modulation module and a light path modulation module, the light path modulation module is a high-energy pulse cluster laser, the circuit modulation module consists of a voltage source (200), a wide-band-gap semiconductor device (400) and a radiation output component (300), and the high-energy pulse cluster laser and the wide-band-gap semiconductor device (400) are connected by adopting optical fibers or optical waveguides;
the high-energy pulse cluster laser generates laser with adjustable pulse cluster repetition frequency, pulse width, envelope waveform and GHz high-frequency pulse repetition frequency, and the laser is input into the wide-bandgap semiconductor device (400) through an optical fiber or an optical waveguide;
the high-energy pulse cluster laser consists of a laser seed source (1), an optical fiber preamplifier (2), an optical modulation module (3), a high-frequency signal source (4), a synchronous control circuit (5), an optical fiber amplifier (6), 2 editable waveform signal plates (7), namely a first editable waveform signal plate (71) and a second editable waveform signal plate (72); the optical modulation module (3) consists of an acousto-optic modulator (31) and an electro-optic intensity modulator (32), and the acousto-optic modulator (31) and the electro-optic intensity modulator (32) are connected in a mode of splicing tail fibers of the device by optical fibers; the output end of the laser seed source (1) is connected with the input end of the optical fiber preamplifier (2), the output end of the optical fiber preamplifier (2) is connected with the optical fiber input end of the optical modulation module (3), namely the optical fiber input end of the acousto-optic modulator (31), the output end of the optical modulation module (3), namely the optical fiber output end of the electro-optic intensity modulator (32) is connected with the input end of the optical fiber amplifier (6) in an optical fiber fusion mode; the signal input end of the laser seed source (1) is connected with the signal output end of the first editable waveform signal plate (71) through a coaxial signal line; the external trigger signal input end of the first editable waveform signal plate (71) is connected with the first output end of the synchronous control circuit (5) through a coaxial signal line; the external trigger signal input end of a second editable waveform signal plate (72) is connected with the second output end of the synchronous control circuit (5) through a coaxial signal line, the signal output end of the second editable waveform signal plate (72) is connected with the signal input end of the acousto-optic modulator (31) through a coaxial signal line, and the radio-frequency signal input end of the electro-optic intensity modulator (32) is connected with the signal output end of the high-frequency signal source (4) through a coaxial signal line;
a synchronous control circuit (5) provides synchronous timing signals for the first editable waveform signal plate (71) and the second editable waveform signal plate (72); the first synchronous timing signal output by the first output end is used for triggering a first editable waveform signal plate (71), and the second synchronous timing signal output by the second output end is used for triggering a second editable waveform signal plate (72);
the first editable waveform signal plate (71) is in an external trigger working mode, when a first synchronous timing signal is received from the synchronous control circuit (5), the width of an electric pulse is edited according to the requirement of a microwave system light guide device on the pulse width of a signal source, and a rectangular signal with adjustable repetition frequency and pulse width is sent to the laser seed source (1);
the laser seed source (1) adopts a semiconductor pulse laser seed source, and generates laser seed pulses with flexibly adjustable pulse repetition frequency, pulse width, amplitude and time domain waveform according to rectangular signals output by the first editable waveform signal plate (71);
the optical fiber preamplifier (2) is used for improving the power of the laser seed pulse generated from the laser seed source (1) and improving the signal-to-noise ratio of a high-energy pulse cluster laser serving as a microwave system light guide device signal source; the optical fiber preamplifier (2) consists of M-level optical fiber amplifiers, wherein M is more than or equal to 1;
the second editable waveform signal plate (72) is in an external trigger working mode, and sends a preset waveform electric signal to the acousto-optic modulator (31) when receiving a second synchronous timing signal from the synchronous control circuit (5);
the acousto-optic modulator (31) is an optical fiber coupling acousto-optic modulator, on one hand, the acousto-optic modulator (31) receives a preset waveform electric signal from the second editable waveform signal plate (72), modulates the optical pulse waveform output by the optical fiber preamplifier (2) into a preset time domain waveform optical pulse, and sends the preset time domain waveform optical pulse to the electric light intensity modulator (32); on the other hand, the acousto-optic modulator (31) cuts off continuous spontaneous radiation noise among the optical pulses output by the optical fiber preamplifier (2);
the high-frequency signal source (4) is used for providing a GHz-magnitude high-frequency sinusoidal signal with adjustable frequency for the electro-optical intensity modulator (32), and the voltage output by the high-frequency signal source (4) is required to be greater than the half-wave voltage of the electro-optical intensity modulator (32);
the electro-optical intensity modulator (32) modulates a preset time domain waveform optical pulse received from the acousto-optic modulator (31) into preset envelope waveform pulse cluster laser according to a high-frequency sinusoidal signal output by the high-frequency signal source (4), so that the repetition frequency and the waveform of a high-frequency pulse in the preset envelope waveform pulse cluster laser are the same as those of the high-frequency sinusoidal signal received from the high-frequency signal source (4), and sends the modulated pulse cluster laser to the optical fiber amplifier (6);
the optical fiber amplifier (6) amplifies the preset envelope waveform pulse cluster laser received from the electro-optical intensity modulator (32) and outputs a rectangular envelope pulse cluster, wherein the optical fiber amplifier (6) consists of N stages of optical fiber amplifiers, and N is more than or equal to 2; the output end of the optical fiber amplifier (6) is welded with an optical fiber end cap or an isolator;
the wide band gap semiconductor device (400) is connected with the high-energy pulse cluster laser through an optical fiber or an optical waveguide, is connected with a voltage source (200) through conductive silver paste, is connected with the radiation output assembly through a coaxial line, generates a high-frequency electric signal under the simultaneous action of laser and voltage, and outputs the high-frequency electric signal to the radiation output assembly; the wide bandgap semiconductor device (400) is composed of a semiconductor wafer (8), a hollow metal electrode (91), a solid metal electrode (92), a filling material (100) and a support structure (101);
the voltage source (200) is a solid-state pulse forming line, and is connected with the electrode of the wide-bandgap semiconductor device (400) by conductive silver paste to generate pulse voltage to act on the wide-bandgap semiconductor device (400);
the radiation output component (300) is a flat broadband radiation horn matched with the impedance of the voltage source (200) and is connected with the wide band gap semiconductor device (400) through an SMA coaxial line;
secondly, the high-energy pulse cluster laser generates high-energy pulse cluster laser, and the high-energy pulse cluster laser is output to the wide band gap semiconductor device (400), and the method comprises the following steps:
2.1, outputting 2 paths of digital signals with adjustable repetition frequencies by a synchronous control circuit (5);
2.2, the first editable waveform signal plate (71) is triggered by a first path of synchronous signal output by the synchronous control circuit (5), the electric pulse width of the first editable waveform signal plate (71) is edited according to the parameter requirement of the wide-bandgap semiconductor device (400) on the pulse width of the signal source, and a rectangular signal with adjustable pulse width is sent to the laser seed source (1);
2.3, the laser seed source (1) receives a rectangular signal with adjustable pulse width output by the first editable waveform signal plate (71) and generates a rectangular light pulse with adjustable pulse width;
2.4, the optical fiber preamplifier (2) amplifies the energy of the rectangular optical pulse output by the laser seed source (1) to a value not exceeding the maximum bearable power of the electro-optic intensity modulator (32) so as to improve the signal-to-noise ratio;
2.5, the second editable waveform signal plate (72) is triggered by the synchronous control circuit to output a second path of synchronous signal, and a rectangular electric signal with the same pulse width as the first editable waveform signal plate (71) is output;
2.6, the acousto-optic modulator (31) receives a rectangular electric signal with the same pulse width as that of the first editable waveform signal plate (71) from the second editable waveform signal plate (72), namely, the laser pulse waveform output by the optical fiber preamplifier (2) is not changed, and sends the laser pulse with the unchanged time domain waveform to the electro-optic intensity modulator (32);
2.7, outputting a high-frequency sinusoidal signal with flexibly adjustable GHz-level frequency by a high-frequency signal source (4);
2.8, the electro-optical intensity modulator (32) modulates the laser pulse of the unchanged time domain waveform received from the acousto-optic modulator (31) into pulse cluster laser of the same envelope waveform according to the high-frequency sinusoidal signal received from the high-frequency signal source (4), so that the repetition frequency and the waveform of the high-frequency pulse in the pulse cluster are the same as the high-frequency sinusoidal signal received from the high-frequency signal source (4), and sends the pulse cluster laser to the optical fiber amplifier (6);
2.9 testing the input pulse cluster laser envelope waveform, the output pulse cluster laser envelope waveform and the pulse cluster laser energy E of the optical fiber amplifier (6)out(t) calculating the instantaneous power P of the time-containing input pulse cluster according to the pulse cluster energy, the envelope waveform of the input pulse cluster and the envelope waveform of the output pulse clusterin(t) and instantaneous power P of the timed output pulse packetout(t), t is time, an envelope waveform is extracted from a Matlab program containing a random parallel gradient descent algorithm and is used as an initial input and output waveform, a gain curve related to the time is obtained through calculation, and an initial gain G is obtained through curve fitting0Saturated power flow E of sum amplifiersatSetting the rectangular envelope waveform as a target output envelope waveform, and operating a Matlab program to obtain a preset waveform electric signal;
2.10, editing the output pulse waveform of the second editable waveform signal plate (72) according to the preset waveform electric signal, so that the second editable waveform signal plate (72) outputs the preset waveform electric signal to the acousto-optic modulator (31);
2.11, the acousto-optic modulator (31) receives the preset waveform electric signal from the second editable waveform signal plate 27, modulates the optical pulse waveform output by the optical fiber preamplifier (2) into a preset time domain waveform optical pulse, and sends the preset time domain waveform optical pulse to the electro-optic intensity modulator (32);
2.12, the electro-optical intensity modulator (32) modulates a preset time domain waveform light pulse received from the acousto-optic modulator (31) into a preset envelope waveform pulse cluster laser according to a high-frequency sinusoidal signal received from the high-frequency signal source (4), the preset envelope waveform pulse cluster laser is in a pulse cluster form, and the pulse cluster envelope is a preset waveform, so that the repetition frequency and the waveform of a high-frequency pulse in the preset envelope waveform pulse cluster laser are the same as the high-frequency sinusoidal signal received from the high-frequency signal source (4), and the modulated pulse cluster laser is sent to the optical fiber amplifier (6);
2.13, amplifying the preset envelope waveform pulse cluster laser received from the electro-optical intensity modulator (32) by the optical fiber amplifier (6), and outputting high-energy pulse cluster laser to the wide-bandgap semiconductor device (400), wherein the repetition frequency, the pulse width, the envelope waveform, the GHz high frequency and the pulse repetition frequency of the pulse cluster laser can be tuned;
thirdly, a voltage source (200) generates pulse voltage, and the high-energy pulse cluster laser and the pulse voltage act on the wide-bandgap semiconductor device (400) simultaneously; the high-energy pulse cluster laser irradiates the wide-band-gap semiconductor device (400) from the hollow metal electrode (91) by utilizing an optical waveguide or an optical fiber, the resistance of the wide-band-gap semiconductor device (400) is changed, the resistance of the wide-band-gap semiconductor device (400) changes linearly along with the light intensity of the high-energy pulse cluster laser, the light intensity is increased, and the resistance is reduced; meanwhile, the wide bandgap semiconductor device (400) modulates the pulse voltage into a high-frequency electrical signal with the same modulation frequency as the high-energy pulse cluster laser, and transmits the modulated high-frequency electrical signal to the radiation output assembly (300);
fourthly, the radiation output component (300) radiates the high-frequency electric signal: the radiation output component (300) receives a high-frequency electric signal from the wide-band-gap semiconductor device (400), radiates the high-frequency electric signal, and generates a microwave signal output.
2. The method as claimed in claim 1, wherein the first and second synchronous timing signals outputted from the synchronous control circuit (5) are standard digital trigger signals with adjustable pulse width, adjustable repetition frequency and amplitude of 2.5V-5V, and the time jitter between pulses of the first and second synchronous timing signals is less than 5 ns.
3. The light guide adaptive narrow spectrum microwave generation method based on the high-energy pulse cluster laser as claimed in claim 1, characterized in that the central wavelength range of the laser seed source (1) is 1030 nm-1065 nm, the pulse width range is 10 ns-200 ns, and the repetition frequency range is 10 Hz-200 kHz.
4. The method for generating the waveguide-adaptive narrow-spectrum microwave based on the high-energy pulse cluster laser as claimed in claim 1, characterized in that the average power and the peak power of the output laser pulse of the optical fiber preamplifier (2) are less than or equal to the maximum withstand power of the electro-optical intensity modulator (32).
5. The method for generating microwave with light guide self-adaptive narrow spectrum based on high-energy pulse cluster laser as claimed in claim 1, characterized in that the bandwidth of the acousto-optic modulator (31) is greater than 100MHz, and the working bandwidth of the electro-optic intensity modulator (32) is greater than or equal to 10 GHz.
6. The method for generating the high-energy pulse cluster laser-based photoconductive adaptive narrow-spectrum microwave according to claim 1, wherein the high-frequency signal source (4) is any one of a voltage-controlled frequency-variable oscillator, a frequency synthesizer, an arbitrary waveform generator and a function generator, or is a combination of any one of a voltage-controlled frequency-variable oscillator, a frequency synthesizer, an arbitrary waveform generator and a function generator and a power amplifier.
7. The method for generating the microwave with the light guide self-adaptive narrow spectrum based on the high-energy pulse cluster laser is characterized in that a semiconductor wafer (8) of the wide-bandgap semiconductor device (400) is connected with 2 electrodes, wherein the semiconductor wafer (8) is composed of a substrate material, a transparent conducting layer, a high-voltage-resistant passivation layer, a metal ring and a silver coating; the substrate material adopts a high-resistance semiconductor, a transparent conducting layer is prepared on the front surface of the high-resistance semiconductor, a high-voltage resistant passivation layer is prepared on the transparent conducting layer, a metal ring is arranged around the high-voltage resistant passivation layer and clings to the transparent conducting layer, and a hollow metal electrode (91) is clinged to the upper surface of the metal ring; a silver coating is prepared on the back of the high-resistance semiconductor and is connected with a solid metal electrode (92); the supporting structure (101) is a rectangular uncovered box processed by polytetrafluoroethylene materials, a hollow metal electrode (91) penetrates through a first side surface 1011 of the supporting structure (101), one end of the hollow metal electrode is adhered to a first surface 81 of the semiconductor wafer (8), and the other end of the hollow metal electrode is connected with a voltage source (200); one end of the solid metal electrode (92) is bonded to the second side 82 of the semiconductor wafer (8) and the other end passes through the second side 1012 of the support structure (101) and is connected to a voltage source (200); a filling material (100) is arranged among the semiconductor wafer (8), the hollow metal electrode (91), the solid metal electrode (92) and the supporting structure (101), and the filling material (100) is required to completely cover the semiconductor wafer (8), the hollow metal electrode (91) and the solid metal electrode (92).
8. The method for the photoconductive adaptive narrow-spectrum microwave generation based on the high-energy pulse cluster laser as claimed in claim 7, characterized in that the semiconductor wafer (8) of the wide-bandgap semiconductor device (400) is a square thin plate or a circular thin plate, and has a thickness of 0.01mm to 10mm, a side length of 1mm to 50mm in the case of the square thin plate, and a diameter of 1mm to 50mm in the case of the circular thin plate.
9. The method for generating the high-energy pulse cluster laser-based photoconductive adaptive narrow-spectrum microwave according to claim 7, wherein a high-resistance semiconductor of the wide-band-gap semiconductor device (400) is made of a wide-band-gap SiC material, the withstand voltage requirement is 3-4 MV/cm, and the recombination time of SiC crystal carriers is less than 1 ns.
10. The method for self-adaptive narrow-spectrum microwave generation based on high-energy pulse cluster laser in light guide according to claim 9, wherein the SiC material is 4H-SiC or 6H-SiC material.
11. The method of claim 7, wherein the materials of the hollow metal electrode (91) and the solid metal electrode (92) of the wide bandgap semiconductor device (400) are stainless steel or brass; the ratio of the diameter of the hollow metal electrode (91) and the solid metal electrode (92) to the side length or the diameter of the semiconductor wafer (8) is kept between 1 and 1.5; the hollow metal electrode (91) and the solid metal electrode (92) are connected with the semiconductor chip (8) by adopting conductive silver paste for bonding.
12. The method for generating microwave with light guide self-adaptive narrow spectrum based on high-energy pulse cluster laser as claimed in claim 7, wherein the filling material (100) of the wide-bandgap semiconductor device (400) is required to have an average withstand voltage of 40kV/mm or more, and the transmittance of light is more than 99% when the wavelength of light is 200nm to 1200 nm.
13. The method of claim 12, wherein the filling material is epoxy resin.
14. The method for generating microwave with light guide self-adaptive narrow spectrum based on high-energy pulse cluster laser as claimed in claim 1, wherein the voltage-withstanding range of the solid-state pulse forming line is the same as that of the wide-band gap semiconductor device (400), and the impedance of the solid-state pulse forming line is the same as the minimum resistance of the wide-band gap semiconductor device (400) in the on-state under laser irradiation.
15. The method for generating a light guide adaptive narrow-spectrum microwave based on a high-energy pulse cluster laser as claimed in claim 1, wherein the solid-state pulse forming line has a three-plate structure stacked together in a metal plate-dielectric-metal plate structure; the medium being energy storage density>1J/cm3The metal plate material is silver; the voltage source (200) and the wide bandgap semiconductor device (400) are connected in a manner that: the hollow metal electrode (91) and the solid metal electrode (92) of the wide bandgap semiconductor device (400) are respectively connected to the middle metal plate 202 and the upper metal plate 201 of the voltage source (200), or the hollow metal electrode (91) and the solid metal electrode (92) are connected to the middle metal plate 202 and the lower metal plate 203 of the voltage source (200).
16. The method for generating light guide adaptive narrow-spectrum microwave based on high-energy pulse cluster laser as claimed in claim 1, wherein the preset waveform electric signal of the second editable waveform signal plate (72) in the 2.9 steps is obtained by the following method:
2.9.1, setting the output signal of the second editable waveform signal plate (72) to be rectangular, and testing the envelope of the input pulse cluster of the optical fiber amplifier (6) by using a high-speed oscilloscope, a photoelectric detector and a power meter under the conditionWaveform, output pulse cluster envelope waveform and pulse cluster energy, and the instantaneous power P of the time-containing input pulse cluster is obtained by calculating the pulse cluster energy, the input pulse cluster envelope waveform and the output pulse cluster envelope waveformin(t) and instantaneous power P of the timed output pulse packetout(t);
2.9.2, mixing Pin(t) and Pout(t) introducing a Matlab program containing a random parallel gradient descent optimization algorithm, extracting an envelope waveform, and using the envelope waveform as an initial input waveform and an initial output waveform when the random parallel gradient descent optimization algorithm calculates a pre-compensation waveform;
2.9.3 by formula g (t) Pout(t)/Pin(t) calculating to obtain a time-dependent gain function G (t), according to a gain formula (1) in an amplifier F-N model,
G(t)=1+(G0-1)exp[-Eout(t)/Esat](1)
curve fitting to obtain initial gain G0Saturated power flow E of sum amplifiersatA parameter;
2.9.4, setting the rectangular envelope waveform as a target output envelope waveform of a Matlab program;
2.9.5, running the MAT L AB program to obtain the preset waveform electric signal.
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