CN110265854A - Light guide self-adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser - Google Patents

Light guide self-adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser Download PDF

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CN110265854A
CN110265854A CN201910526275.1A CN201910526275A CN110265854A CN 110265854 A CN110265854 A CN 110265854A CN 201910526275 A CN201910526275 A CN 201910526275A CN 110265854 A CN110265854 A CN 110265854A
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signal
waveform
laser
pulse
cluster
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CN110265854B (en
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荀涛
杨汉武
张斌
张军
侯静
伍麒霖
贺璇
王日品
李嵩
张强
贺军涛
张建德
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National University of Defense Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention discloses a light guide self-adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser, and aims to solve the problems that a microwave generation device in the existing microwave generation method is large in size, single in frequency point and difficult to adjust frequency. The technical scheme is that a light guide self-adaptive narrow-spectrum microwave generator which consists of a high-energy pulse cluster laser, a voltage source, a wide-band-gap semiconductor device and a radiation output assembly is constructed; the high-energy pulse cluster laser outputs high-energy pulse cluster laser with adjustable pulse cluster repetition frequency, pulse width, envelope waveform and GHz high-frequency pulse repetition frequency to the wide-band gap semiconductor device; the voltage source is a solid pulse forming line which generates pulse voltage to act on the wide band gap semiconductor device; the wide band gap semiconductor device generates a high-frequency electric signal under the simultaneous action of laser and voltage; the radiation output assembly radiates the high-frequency electric signal and outputs a microwave signal. The invention can solve the problems of large volume, single frequency point and difficult frequency adjustment of microwave generating devices.

Description

A kind of adaptive narrow spectrum microwave production method of the light guide based on high energy pulse cluster laser
Technical field
The present invention relates to a kind of High-Power Microwave production methods --- based on high recurrent frequency pulse laser and broad-band gap light guide half The narrow spectrum microwave production method of conductor.
Background technique
High-Power Microwave is upset, the electronic information of damage equipment by strong electromagnetic radiation, interference, drops its function Grade or failure can effectively improve information countermeasure ability, have light velocity attack, soft destruction, the spies such as face kills, collateral damage is small Point.
In order to cope with the increasingly complicated and new waveform of threat target electromagnetic environment of informatization, new frequency spectrum it is continuous The case where emerging in large numbers needs to develop parameter flexibly adjustable NEW ADAPTIVE directional energy microwave production method.Conventional high power microwave Production method is that 40-50 has been developed based on pulse power device and the theory of relativity electron tube, exports microwave parameters Usually fixed, frequency point is single or is difficult to adjust.It this is because the usual operating frequency range of the theory of relativity vacuum device is narrow, and is machinery Structure is adjusted difficult.Moreover, electron tube needs to run under vacuum conditions, cause to produce using the microwave of this method design Raw device volume is huge.
Generating microwave using photoconductive semiconductors is a more new direction of Recent study, open both at home and abroad at present to report It is all to generate one using the property of the fast conducting of photoconductive semiconductor switches using photoconductive semiconductors as quick cut-out switch The pulse voltage of a steep-front, then radiation generates broadband or ultra-broadband signal, the effect class of photoconductive semiconductors in these reports Like switching oscillator.For example, document " Photoconductive Switch-Based HPM for Airborne Counter- IED Applications (the High-Power Microwave generator for airborne anti-improvised explosive devices based on photoconductive switch), IEEE Transactions on Plasma Science (IEEE plasma science journal), 2014,42 phases, volume 5, the 1285th- Page 1294 " described in be exactly it is a kind of using photoconductive switch on state characteristic production wide-band microwave signal generator method, the party Method cuts off Dc bias using the fast conducting characteristic of photoconductive switch, generates a steep rising edge electric signal, then pass through broadband day Beta radiation generates wide range signal；Since the energy of wide range disperses in frequency, and low-frequency component is restricted and antenna size, orients spoke Relative difficulty is penetrated, so the microwave power " equivalent radiation power " generated is low, thus the microwave power generated is lower, and the program is defeated Microwave signal out is in hectowatt magnitude.
Summary of the invention
The technical problem to be solved by the present invention is to be used for the existing method for generating microwave using electron tube Microwave generator part volume it is big, the problem of frequency point is single and frequency difficulty tune, propose a kind of light based on high recurrent frequency pulse laser Lead adaptive narrow spectrum microwave production method.It is linear in the case where high voltage and high current are horizontal using broad-band gap photoconductive semiconductors device Operating mode (under linear operation mode, as soon as photon enters to inject device, generates a pair of of hole-electron pair, electricity in device Son moves under the action of the electric field that applied voltage generates, and then forms electric current；The electric current and incident laser that this mode generates There are consistent waveform and frequency, under applying bias voltage, by Gao Zhongying laser irradiation broad-band gap photoconductive semiconductors device, produces Raw high frequency electrical signal, and radiant output generates microwave signal.
Specific technical solution of the present invention the following steps are included:
The first step constructs light guide adaptively narrow spectrum microwave generator, and the microwave generator is by circuit modulation module and optical path Modulation module two parts composition, wherein optical path modulation module is a kind of high energy that can be used as microwave system photocon signal source Impulse cluster laser, abbreviation high energy pulse cluster laser, circuit modulation module is by voltage source, wide bandgap semiconductor device and radiation Output precision three parts composition.High energy pulse cluster laser is connect with wide bandgap semiconductor device using optical fiber or optical waveguide.
High energy pulse cluster laser generation impulse cluster repetition, pulsewidth, envelope waveform, GHz high-frequency impulse repetition are all adjustable Laser is input in wide bandgap semiconductor device by optical fiber or optical waveguide.
High energy pulse cluster laser is by laser seed source, optical fiber prime amplifier, optical modulation module, high-frequency signal source, same Walk control circuit, fiber amplifier and 2 pieces of editable waveform signal plates (i.e. the first editable waveform signal plate and second editables Waveform signal plate) composition.Optical modulation module is made of acousto-optic modulator and electro-optic intensity modulator, acousto-optic modulator and electric light Intensity modulator is connected in a manner of fused fiber splice device tail optical fiber.The input of the output end and optical fiber prime amplifier in laser seed source End, optical fiber prime amplifier output end and optical modulation module optic fibre input end (i.e. the optic fibre input end of acousto-optic modulator), The output end (i.e. the fiber-optic output of electro-optic intensity modulator) and the input terminal of fiber amplifier of optical modulation module pass through The mode of fused fiber splice connects, and the output end welding of fiber amplifier has end cap or isolator.And the signal in laser seed source Input terminal is connected with the signal output end of the first editable waveform signal plate by coaxial signal line；First editable waveform signal The outer triggering signal input terminal of plate and the first output end of synchronous control circuit are connected by coaxial signal line；Second editable The outer triggering signal input terminal of waveform signal plate is connected with the second output terminal of synchronous control circuit by coaxial signal line, the The signal output end of two editable waveform signal plates is connected with the signal input part of acousto-optic modulator by coaxial signal line.Electric light The RF signal input end of intensity modulator and the signal output end of high-frequency signal source are connected with coaxial signal line.
The synchronous control circuit provides synchronization for the first editable waveform signal plate and the second editable waveform signal plate Clock signal.First synchronous sequence signal of the first output end of synchronous control circuit output is for triggering the first editable waveform letter Number plate, the second synchronous sequence signal of second output terminal output is for triggering the second editable waveform signal plate.It is required that 2 tunnels are synchronous Clock signal is adjustable pulse width, and repetition is adjustable, and amplitude is the standard digital trigger signal of 2.5V~5V, and the first synchronous sequence is believed Number and the second synchronous sequence signal inter pulse time shake be less than 5ns.
The first editable waveform signal plate is external trigger operating mode, same when receiving first from synchronous control circuit When walking clock signal, electronic pulse width is edited in the requirement according to microwave system photocon to signal source pulsewidth, to laser seed Source sends repetition and all adjustable rectangular signal of pulsewidth.
The laser seed source uses semiconductor pulse laser seed source, and this semiconductor pulse laser seed source can root It is flexibly adjustable sharp that pulse repetition, pulsewidth, amplitude, time domain waveform are generated according to the rectangular signal of editable waveform signal plate output Light seed pulse.It is required that the central wavelength range in semiconductor pulse laser seed source is 1030nm~1065nm, pulse duration range is 10ns~200ns, repetition range are 10Hz~200kHz.
The optical fiber prime amplifier carries out power raising to the laser seed pulse generated from laser seed source, and promotes height The signal-to-noise ratio of energy impulse cluster laser.Optical fiber prime amplifier is made of M (M >=1) grade fiber amplifier.It is required that optical fiber prime amplifier The mean power and peak power of output laser pulse are less than or equal to the maximum of electro-optic intensity modulator and bear power.
The second editable waveform signal plate is external trigger operating mode, same when receiving second from synchronous control circuit Predetermined waveform electric signal is sent to acousto-optic modulator when walking clock signal.
The gain saturaition of optical fiber prime amplifier and fiber amplifier will lead to amplified laser pulse shape and it Received input laser pulse shape it is different, i.e., amplified laser pulse shape can be distorted.In order to as microwave System photocon signal source, the present invention need to export rectangular envelope impulse cluster laser, and (fiber amplifier i.e. of the present invention must export square Shape profiled pulses cluster laser), it is therefore desirable to the waveform of the input signal of fiber amplifier is preset, this passes through editable wave Shape signal plate sends predetermined waveform electric signal to acousto-optic modulator and realizes.
The acousto-optic modulator is fiber coupling acousto-optic modulator, and band is wider than 100MHz.Acousto-optic modulator on the one hand from Second editable waveform signal plate receives predetermined waveform electric signal, the optical pulse waveform that optical fiber prime amplifier exports is modulated to pre- If time domain waveform light pulse, and by default time domain waveform light pulses to electro-optic intensity modulator；Another aspect acousto-optic modulation Device turns off continuous spontaneous emission noise between the light pulse that optical fiber prime amplifier exports.
The high-frequency signal source is used to provide frequency agile adjustable GHz magnitude, high frequency sine letter for electro-optic intensity modulator Number.High-frequency signal source can be any in voltage-controlled frequency variable oscillation device, frequency synthesizer, arbitrary waveform generator, function generator It is a kind of, or voltage-controlled frequency variable oscillation device, frequency synthesizer, arbitrary waveform generator, any one in function generator with The combination of power amplifier.It is required that the voltage of high-frequency signal source output is greater than the half-wave voltage of electro-optic intensity modulator.
The bandwidth of operation of electro-optic intensity modulator is more than or equal to 10GHz.Electro-optic intensity modulator is defeated according to high-frequency signal source High frequency sinusoidal signal out will be modulated to default envelope waveform pulse from the received default time domain waveform light pulse of acousto-optic modulator Cluster laser so that in default envelope waveform impulse cluster laser the repetition of high-frequency impulse and waveform with from the received height of high-frequency signal source Frequency sinusoidal signal is identical, and modulated impulse cluster laser is sent to fiber amplifier.
The fiber amplifier is amplified to from the received default envelope waveform impulse cluster laser of electro-optic intensity modulator, Export rectangular envelope impulse cluster.Fiber amplifier is made of N (N >=2) grade fiber amplifier.The output end welding of fiber amplifier There are end caps or isolator, prevents damage of the end face light echo to high energy pulse cluster laser.
Voltage source is that state pulse forming line is connected with the electrode of wide bandgap semiconductor device with conductive silver paste, generates arteries and veins Voltage is rushed to act on wide bandgap semiconductor device.
Wide bandgap semiconductor device is connected by optical fiber or optical waveguide with high energy pulse cluster laser, by conductive silver paste and Voltage source is connected, and is connected by coaxial line with radiant output component, under acting on while laser and voltage, generates high frequency telecommunications Number, and high frequency electrical signal is exported and gives radiant output component.
Wide bandgap semiconductor device is by four semiconductor wafer (i.e. substrate), 2 electrodes, packing material and support construction portions It is grouped as, the combination that semiconductor wafer 8 and 2 electrode connects, and " opposite is just entering application No. is 201710616299.7 patent " opposite is just entering light type high power photoconductive switching device " described in light type high power photoconductive switching device and preparation method thereof " ties Structure is identical: it uses high ohmic semiconductor as substrate material, prepares transparency conducting layer on high ohmic semiconductor (front), Preparation has the high pressure resistant passivation layer of antireflective effect on transparency conducting layer, and the surrounding of high pressure resistant passivation layer has a becket to be close to Then transparency conducting layer connects (i.e. the upper surface of becket is close to hollow metal electrode) with hollow metal electrode；High resistance is partly led The body back side first prepares the silver coating with high reflexive energy, then connect with solid metal electrode.Hollow metal electrode therein and Solid metal electrode is two electrodes in the present invention, rest part (i.e. substrate material, transparency conducting layer, high pressure resistant passivation Layer, becket, silver coating) it is semiconductor wafer used in the present invention.Semiconductor wafer can be square sheet or thin rounded flakes, With a thickness of 0.01mm~10mm, side length is 1mm~50mm when being square sheet, and diameter is 1mm~50mm's when being thin rounded flakes. Semiconductor wafer substrate material, that is, high ohmic semiconductor selects broad-band gap SiC material, and such as 4H-SiC or 6H-SiC material, pressure resistance is wanted It asks as 3~4MV/cm, the recombination time of SiC crystal carrier is less than 1ns.Hollow metal electrode and solid metal electrode material can To be stainless steel or brass；The side length of the diameter and semiconductor wafer of hollow metal electrode and solid metal electrode or the ratio of diameter It is maintained between 1~1.5；Hollow metal electrode and solid metal electrode and the connection of semiconductor wafer are mutually glued using conductive silver glue It connects, by solidifying elargol after baking.Support construction is the rectangle uncovered box being processed into polytetrafluoroethylene material, hollow gold Belong to the first side that electrode passes through support construction, one end is Nian Jie with the first face of semiconductor wafer, and the other end is connected with voltage source； One end of solid metal electrode is Nian Jie with the second face (face opposite with the first face) of semiconductor wafer, and the other end passes through branch The second side of support structure, is connected with voltage source；Semiconductor wafer 8, hollow metal electrode, solid metal electrode and support construction Between have a packing material, packing material requires that semiconductor wafer, hollow metal electrode, solid metal electrode is completely covered, and fills Material 100 will be averaging tolerance field strength >=40kV/mm, and as optical wavelength 200nm~1200nm, the transmitance of light is greater than 99%, Packing material preferred epoxy.
Voltage source is state pulse forming line.The pressure-resistant range of state pulse forming line should be with wide bandgap semiconductor device Pressure-resistant range is identical, the conducting state minimum resistance of state pulse forming line impedance and wide bandgap semiconductor device under laser irradiation It is identical.State pulse forming line is three slab constructions, is stacked according to metal plate-dielectric-metal plate-dielectric-metal plate structure Together.Medium is with high energy storage density (> 1J/cm3) dielectric material, metallic sheet material select silver.Voltage source and broadband The connection type of gap semiconductor device are as follows: two electrode of wide bandgap semiconductor device, the intermetallic metal that voltage source can be separately connected Plate and upper layer metal plate, two electrodes also can connect voltage source intermetallic metal plate and lower metal plate.
Radiant output component is the plate broadband radiation loudspeaker to match with voltage source impedance, passes through SMA (SubMiniature version A) coaxial line is connected with wide bandgap semiconductor device, by wide bandgap semiconductor device output High frequency electrical signal is radiated, and microwave signal output is generated.
Second step, high energy pulse cluster laser generates high energy pulse cluster laser, and exports height to wide bandgap semiconductor device Energy impulse cluster laser, this high energy pulse cluster laser repetition, pulsewidth, envelope waveform, GHz high-frequency impulse repetition is tunable, side Method is:
2.1, synchronous control circuit exports the 2 adjustable digital signals of tunnel repetition；
2.2, the first editable waveform signal plate is in synchronized control the first via synchronization signal triggering of circuit output, according to micro- Electronic pulse width of the wave system system photocon to parameter request editor the first editable waveform signal plate of signal source pulsewidth, Xiang Ji The rectangular signal of light seed source transmission adjustable pulse width；
2.3, laser seed source receives the rectangular signal of the adjustable pulse width of the first editable waveform signal plate output, generates arteries and veins The adjustable rectangle light pulse of width, this light pulse repetition, pulsewidth is adjustable；
2.4, the rectangle optical pulse energy that laser seed source exports is amplified to no more than electro-optic intensity by optical fiber prime amplifier The maximum of modulator can bear power, and to promote signal-to-noise ratio, the laser pulse shape feature of output is waveform due to gain saturatiuon Effect is distorted；
2.5, the second editable waveform signal plate is in synchronized control the triggering of circuit output the second tunnel synchronization signal, output and the The rectangular telecommunication number of one editable waveform signal plate same pulse width.
2.6, acousto-optic modulator receives arteries and veins identical as the first editable waveform signal plate from the second editable waveform signal plate Wide rectangular telecommunication number does not change the laser pulse shape of optical fiber prime amplifier output, and will have not been changed swashing for time domain waveform Light pulses are to electro-optic intensity modulator；
2.7, high-frequency signal source exports GHz magnitude frequency flexibly adjustable high frequency sinusoidal signal；
2.8, electro-optic intensity modulator will connect according to from the received high frequency sinusoidal signal of high-frequency signal source from acousto-optic modulator The Laser pulse modulator for having not been changed time domain waveform received is the impulse cluster laser of identical envelope waveform, so that high frequency arteries and veins in impulse cluster The repetition of punching and waveform are identical as from the received high frequency sinusoidal signal of high-frequency signal source, and impulse cluster laser is sent to optical fiber and is put Big device；
2.9, test the input pulse cluster laser envelope waveform, output impulse cluster laser envelope waveform and arteries and veins of fiber amplifier Rush cluster laser energy, by impulse cluster energy and input pulse cluster envelope waveform, output impulse cluster envelope waveform be calculated containing when Input pulse cluster instantaneous power Pin(t and the impulse cluster instantaneous power P of output containing whenout(t), Matlab program is imported (to include random Parallel gradient descent algorithm) in extract envelope waveform, as initial input output waveform, be thus calculated and time correlation Gain curve, initial gain G is obtained by formula (1) curve matching0E can be flowed with the saturation of amplifiersatParameter.Then by square Shape envelope waveform is set as target output envelope waveform, and operation Matlab program obtains predetermined waveform electric signal；The predetermined waveform Electric signal is obtained using following methods:
2.9.1, rectangle, i.e. the second editable waveform signal are set by the output signal of the second editable waveform signal plate Plate output signal makes acousto-optic modulator not change the laser pulse shape that optical fiber prime amplifier exports.With this condition with high speed Oscillograph, the input pulse cluster envelope waveform of photodetector and power meter test fiber amplifier, output impulse cluster Envelop waves Shape and impulse cluster ENERGY Eout(t), it is calculated by impulse cluster energy and input pulse cluster envelope waveform, output impulse cluster envelope waveform Obtain the cluster instantaneous power of input pulse containing when Pin(t) and when containing impulse cluster instantaneous power P is exportedout(t), t is the time.
2.9.2, by obtained input pulse containing when cluster instantaneous power Pin(t) and when containing impulse cluster instantaneous power P is exportedout (t) Matlab program is imported, envelope waveform is extracted, it is calculated as random paralleling gradient descent algorithm first when pre-compensating for waveform Beginning outputs and inputs waveform.
2.9.3, pass through formula G (t)=Pout(t)/Pin(t) the gain function G (t) with time correlation is calculated, according to Gain formula (1) in amplifier F-N model,
G (t)=1+ (G0-1)exp[-Eout(t)/Esat] (1)
Curve matching obtains initial gain G0E can be flowed with the saturation of amplifiersatParameter；
2.9.4, the target that rectangular envelope waveform is set as Matlab program is exported into envelope waveform, normalization target exports square Shape envelope waveform；
2.9.5, operation MATLAB program obtains predetermined waveform.
2.10, according to predetermined waveform electric signal, the output pulse waveform of the second editable waveform signal plate is edited, so that the Two editable waveform signal plates export predetermined waveform electric signal to acousto-optic modulator.
2.11, acousto-optic modulator receives predetermined waveform electric signal from the second editable waveform signal plate, by optical fiber pre-amplification The optical pulse waveform of device output is modulated to default time domain waveform light pulse, it is characterized in that waveform is to be calculated by above step Predetermined waveform, the impulse cluster envelope waveform that may make fiber amplifier to export is rectangle, and by default time domain waveform light pulse It is sent to electro-optic intensity modulator.
2.12, electro-optic intensity modulator will connect according to from the received high frequency sinusoidal signal of high-frequency signal source from acousto-optic modulator The default time domain waveform light pulse received is modulated to default envelope waveform impulse cluster laser, it is characterized in that impulse cluster form and pulse Cluster envelope is predetermined waveform so that in default envelope waveform impulse cluster laser the repetition of high-frequency impulse and waveform with from high-frequency signal The received high frequency sinusoidal signal in source is identical, and modulated impulse cluster laser is sent to fiber amplifier；
2.13, fiber amplifier is put to from the received default envelope waveform impulse cluster laser of electro-optic intensity modulator Greatly, high energy pulse cluster laser, this repetition of impulse cluster laser, pulsewidth, envelope waveform, GHz high are exported to wide bandgap semiconductor device Frequency pulse repetition is tunable.
Third step, voltage source (pulse-forming line) generate pulse voltage, and high energy pulse cluster laser and pulse voltage are made simultaneously For wide bandgap semiconductor device.I.e. only high energy pulse cluster laser start irradiate semiconductor when voltage source just apply voltage, When light terminates irradiation, voltage-drop loading also accordingly terminates.
High energy pulse cluster laser utilizes optical waveguide or optical fiber, and wide band gap semiconducter device is irradiated to from hollow metal electrode On part, change wide bandgap semiconductor device resistance (herein broad-band gap photoconductive semiconductors device be substantially equivalent to one it is variable Resistance, internal resistance change according to the variation of laser intensity), the resistance of wide bandgap semiconductor device is with high energy pulse cluster laser The linear variation of light intensity, light intensity become larger, and resistance reduces.
Meanwhile wide bandgap semiconductor device by pulsed-voltage control at height identical with high energy pulse cluster Laser Modulation frequency (wide bandgap semiconductor device works in linear model frequency electric signal, i.e. a photon enters to inject device and generates a pair of of both hole and electron Right, electronics moves under the action of the electric field that applied voltage generates, and then generates electric current；The electric current and incidence that this mode generates Laser has consistent waveform and frequency；Pulse voltage U is not according to Ohm's law " I=U/R ", in modulated process for the operating mode Becoming, resistance R changes with light intensity in inverse proportion, therefore the electric current I of wide bandgap semiconductor device output and the proportional example variation of light intensity, So periodically variable light intensity (i.e. high energy pulse cluster laser) produces periodically variable electric current, the two frequency is identical), and Modulated high frequency electrical signal is sent to radiant output component.
4th step, radiant output component radiate high frequency electrical signal: radiant output component is received from wide bandgap semiconductor device High frequency electrical signal radiates high frequency electrical signal, generates microwave signal output.
The adaptive narrow spectrum microwave generator of the light guide of the first step of the present invention building is with modularization, solid state and intelligentized Feature.
Compared to the conventional high power microwave production method based on pulse power and the theory of relativity radio tube, the present invention has Following technical characterstic:
1, output microwave frequency is flexible --- and parameter is any flexibly adjustable, the inherent advantage with " intelligence ".The present invention Under wide bandgap semiconductor device linear model, a photon, which enters to inject, just generates an electronics (carrier) in SiC crystal, therefore Electric current in SiC crystal is completely by high energy pulse cluster laser control, since the carrier in SiC crystal has lower than 1ns's Recombination time, the semiconductor devices can respond the input optical signal of GHz, export the electric signal of GHz.Wide bandgap semiconductor device The electric signal of output is consistent with the input modulating frequency of high energy pulse cluster laser of the device, and output frequency depends primarily on high energy The modulating frequency of impulse cluster laser, unlike conventional high power microwave set of device only corresponds to a frequency point.The present invention passes through change (see 2.7 steps, high-frequency signal source exports GHz magnitude frequency flexibly adjustable high frequency sinusoidal to the modulating frequency of high energy pulse cluster laser Signal；High-frequency signal source output frequency is adjusted, the modulating frequency of high energy pulse cluster laser can be changed), Microwave Frequency may be implemented The modulation of 10 frequency multiplication of rate, i.e., adjustable from 0.1GHz to 1GHz, the recombination time of SiC crystal carrier limits on warbled Limit.
2, there is high repetition frequency ability using the microwave that the present invention generates --- repetition rate of the invention depends on height The repetition rate of energy impulse cluster laser, only by the supply function for carrying equipment (such as panzer, naval vessels, fighter plane) of the invention The limitation of rate.Existing electrovacuum scheme repetition rate only has tens to 100Hz, and the present invention is in high energy pulse cluster laser repetition Range is 10Hz~200kHz, therefore higher repetition frequency may be implemented in the present invention.
3, the adaptive narrow spectrum microwave generator of light guide of first step building of the present invention has high reliability --- all units It is solid-state, which needs gas spark switch and vacuum electron beam and its auxiliary device unlike conventional high power microwave system, Thus space efficiency utilization is high, and compact-sized small in size, reliability is higher, and platform flexibility is stronger.
4, the adaptive narrow spectrum microwave generator of light guide of stronger maneuverability --- first step production of the present invention has weight Lighter, the smaller advantage of volume can allow platform to increase additional energy-storage system simultaneously when being equipped to equipment up Enhance attack.
5, the wide bandgap semiconductor device in the present invention works in linear model, i.e. a photon enters to inject device and generates one To hole-electron pair, electronics moves under the action of the electric field that applied voltage generates, and then generates electric current；What this mode generated Electric current and incident laser have consistent waveform and frequency.Therefore the present invention is regulated and controled by high frequency light, photoconductive semiconductors can be regarded Make one " light guide amplifier ", generation be narrow spectrum microwave signal (when microwave signal pulsewidth is 100ns, spectrum width 10MHz amount Grade or 1% magnitude of relative bandwidth), there are better directional transmissions, it is higher to generate microwave energy.
6, the present invention fills wide bandgap semiconductor device using packing material, and air edge flashing is avoided to hit It wears, promotes the pressure resistance of semiconductor devices, also improve the power capacity of microwave generator.
The present invention attacks integrated radar in High-Power Microwave technology of new generation, spy and cognition electronic warfare field possesses wide answer Use prospect.
Detailed description of the invention
Fig. 1 is overview flow chart of the present invention；
Fig. 2 is the adaptive narrow spectrum microwave generator building-block of logic of light guide of first step building of the present invention；
Fig. 3 is the high energy pulse cluster overall laser structure schematic diagram in Fig. 2.
Fig. 4 is that predetermined waveform electric signal generates schematic diagram.Wherein, Fig. 4 (a) is 6 input pulse cluster envelope of fiber amplifier Waveform, 4 (b) export impulse cluster envelope waveform for fiber amplifier 6；Fig. 4 (c) is normalization target output rectangular envelope waveform； Fig. 4 (d) is normalization predetermined waveform；
Fig. 5 is the structure chart of wide bandgap semiconductor device；
Fig. 6 is the connection schematic diagram of wide bandgap semiconductor device, three plate pulse-forming lines and radiation assembly.
Specific embodiment
Fig. 1 is overview flow chart of the present invention；As shown in Figure 1, the present invention the following steps are included:
The first step constructs light guide adaptively narrow spectrum microwave generator, as shown in Fig. 2, the adaptive narrow spectrum microwave of light guide generates Device is made of circuit modulation module and optical path modulation module two parts, and wherein optical path modulation module is that one kind can be used as microwave system The high energy pulse cluster laser for photocon signal source of uniting, abbreviation high energy pulse cluster laser, circuit modulation module is by voltage source 200, wide bandgap semiconductor device 400 and 300 three parts of radiant output component composition.High energy pulse cluster laser and broad-band gap half Conductor device 400 is connected using optical fiber or optical waveguide.
High energy pulse cluster laser generation impulse cluster repetition, pulsewidth, envelope waveform, GHz high-frequency impulse repetition are all adjustable Laser is input in wide bandgap semiconductor device by optical fiber or optical waveguide.
High energy pulse cluster laser as shown in figure 3, by laser seed source 1, optical fiber prime amplifier 2, optical modulation module 3, High-frequency signal source 4, synchronous control circuit 5, fiber amplifier 6 and editable waveform signal plate 7 form.Wherein laser seed source 1, Optical fiber prime amplifier 2, optical modulation module 3 and fiber amplifier 6 are connected by the mode of fused fiber splice.High-frequency signal source 4 synchronizes Control circuit 5, the first editable waveform signal plate 71 and laser seed source 1, the second editable waveform signal plate 72 and acousto-optic tune It is connected between device 31 processed with coaxial wire.
Optical modulation module 3 is made of acousto-optic modulator 31 and electro-optic intensity modulator 32, acousto-optic modulator 31 and electric light Intensity modulator 32 is connected in a manner of fused fiber splice device tail optical fiber.The output end in laser seed source 1 and optical fiber prime amplifier 2 Optic fibre input end (the i.e. optical fiber of acousto-optic modulator 31 of input terminal, the output end of optical fiber prime amplifier 2 and optical modulation module 3 Input terminal), the output end (i.e. the fiber-optic output of electro-optic intensity modulator 32) of optical modulation module 3 and fiber amplifier 6 Input terminal is connected by way of fused fiber splice, and the output end welding of fiber amplifier 6 has end cap or isolator.And laser The signal input part of seed source 6 is connected with the signal output end of the first editable waveform signal plate 71 by coaxial signal line；The The outer triggering signal input terminal of one editable waveform signal plate 71 and the first output end of synchronous control circuit 5, which pass through, coaxially to be believed The connection of number line；The outer triggering signal input terminal of second editable waveform signal plate 71 and the second output of synchronous control circuit 5 End is connected by coaxial signal line, and the signal of the signal output end and acousto-optic modulator 31 of the second editable waveform signal plate 72 is defeated Enter end to be connected by coaxial signal line.The RF signal input end of electro-optic intensity modulator 32 and the signal of high-frequency signal source 4 are defeated Outlet is connected with coaxial signal line.
The synchronous control circuit 5 is that the first editable waveform signal plate 71 and the second editable waveform signal plate 72 provide Synchronous sequence signal.First synchronous sequence signal of 5 first output end of synchronous control circuit output is for triggering the first editable Waveform signal plate 71, the second synchronous sequence signal of second output terminal output is for triggering the second editable waveform signal plate 72. It is required that 2 road synchronous sequence signals are adjustable pulse width, repetition is adjustable, and amplitude is the standard digital trigger signal of 2.5V~5V, and the One synchronous sequence signal and the shake of the second synchronous sequence signal inter pulse time are less than 5ns.
The first editable waveform signal plate 71 is external trigger operating mode, when receiving first from synchronous control circuit When synchronous sequence signal, electronic pulse width is edited in the requirement according to microwave system photocon to signal source pulsewidth, to laser kind Component 1 sends repetition and all adjustable rectangular signal of pulsewidth.
The laser seed source 1 uses semiconductor pulse laser seed source, and this semiconductor pulse laser seed source can be with It is flexible according to the rectangular signal generation pulse repetition of the first editable waveform signal plate 71 output, pulsewidth, amplitude, time domain waveform Adjustable laser seed pulse.It is required that the central wavelength range in semiconductor pulse laser seed source 1 is 1030nm~1065nm, arteries and veins Wide scope is 10ns~200ns, and repetition range is 10Hz~200kHz.
The optical fiber prime amplifier 2 carries out power raising to the laser seed pulse generated from laser seed source, and is promoted The signal-to-noise ratio of high energy pulse cluster laser.Optical fiber prime amplifier 2 is made of M (M >=1) grade fiber amplifier.It is required that predispersed fiber is put The mean power and peak power of 2 output laser pulse of big device are less than or equal to the maximum of electro-optic intensity modulator and bear power.
The second editable waveform signal plate 72 is external trigger operating mode, when receiving the from synchronous control circuit 5 Predetermined waveform electric signal is sent to acousto-optic modulator when two synchronous sequence signals.
The acousto-optic modulator 31 is fiber coupling acousto-optic modulator, and band is wider than 100MHz.31 1 side of acousto-optic modulator Face receives predetermined waveform electric signal, the optical pulse waveform that optical fiber prime amplifier 2 is exported from the second editable waveform signal plate 72 It is modulated to default time domain waveform light pulse, and by default time domain waveform light pulses to electro-optic intensity modulator 32；Another party Face acousto-optic modulator 31 turns off continuous spontaneous emission noise between the light pulse that optical fiber prime amplifier 2 exports.
The high-frequency signal source 4 is used to provide the adjustable GHz magnitude, high frequency of frequency agile just for electro-optic intensity modulator 32 String signal.High-frequency signal source 4 can be in voltage-controlled frequency variable oscillation device, frequency synthesizer, arbitrary waveform generator, function generator Any one, or it is voltage-controlled frequency variable oscillation device, frequency synthesizer, arbitrary waveform generator, any one in function generator The combination of kind and power amplifier.It is required that the voltage that high-frequency signal source 4 exports is greater than the half-wave voltage of electro-optic intensity modulator 32.
The bandwidth of operation of electro-optic intensity modulator 32 is more than or equal to 10GHz.Electro-optic intensity modulator 32 is according to high-frequency signal The high frequency sinusoidal signal of source output will be modulated to default Envelop waves from the received default time domain waveform light pulse of acousto-optic modulator 31 Shape impulse cluster laser so that in default envelope waveform impulse cluster laser the repetition of high-frequency impulse and waveform with from high-frequency signal source 1 Received high frequency sinusoidal signal is identical, and modulated impulse cluster laser is sent to fiber amplifier 6.
The fiber amplifier 6 is put to from the received default envelope waveform impulse cluster laser of electro-optic intensity modulator Greatly, rectangular envelope impulse cluster is exported.Fiber amplifier 6 is made of N (N >=2) grade fiber amplifier.The output of fiber amplifier 6 End welding has end caps or isolator, prevents damage of the end face light echo to high energy pulse cluster laser.
As shown in Fig. 2, voltage source 200 is the electrode conduction of state pulse forming line and wide bandgap semiconductor device 400 Silver paste connection generates pulse voltage and acts on wide bandgap semiconductor device 400.
Wide bandgap semiconductor device 400 is connected by optical fiber or optical waveguide with high energy pulse cluster laser, and conductive silver is passed through Slurry is connected with voltage source, is connected by coaxial line with radiant output component, under acting on while laser and voltage, generates high frequency Electric signal, and high frequency electrical signal is exported to radiant output component 300.
As shown in figure 5, wide bandgap semiconductor device 400 is by semiconductor wafer 8 (i.e. substrate), 2 electrodes, packing materials 100 and the part of support construction 101 4 form, what semiconductor wafer 8 and 2 electrode connect, which be applied in combination high ohmic semiconductor, makees For substrate material, transparency conducting layer is prepared on high ohmic semiconductor (front), is prepared over transparent conductive layer with anti-reflection The high pressure resistant passivation layer of effect, preparing becket connection transparency conducting layer later, (surrounding of i.e. high pressure resistant passivation layer has a gold Belong to ring close-fitting transparent conductive layer), then (i.e. the upper surface of becket is close to hollow metal electrode with the connection of hollow metal electrode 91 91)；Substrate back first prepares the silver coating with high reflexive energy, then connect with solid metal electrode 92.Hollow gold therein Belong to electrode 91 and solid metal electrode 92 is two electrodes in the present invention, rest part (i.e. substrate material, electrically conducting transparent Layer, high pressure resistant passivation layer, becket, silver coating) it is semiconductor wafer 8 used in the present invention.Semiconductor wafer 8 can be rectangular Thin slice or thin rounded flakes, with a thickness of 0.01mm~10mm, side length is 1mm~50mm when being square sheet, straight when being thin rounded flakes Diameter is 1mm~50mm's.8 substrate material of semiconductor wafer selects broad-band gap SiC material, and such as 4H-SiC or 6H-SiC, pressure resistance is wanted It asks as 3~4MV/cm, the recombination time of SiC crystal carrier is less than 1ns.92 material of hollow metal electrode 91 and solid metal electrode Material can be stainless steel or brass；The side length of the diameter and semiconductor wafer of hollow metal electrode 91 and solid metal electrode 92 or The ratio of diameter is maintained between 1~1.5；The connection of hollow metal electrode 91 and solid metal electrode 92 and semiconductor wafer uses Conductive silver glue is mutually bonded, by solidifying elargol after baking.Support construction 101 is the rectangle being processed into polytetrafluoroethylene material Uncovered box, hollow metal electrode 91 pass through the first side 1011 of support construction 101, one end and the first of semiconductor wafer 8 Face 81 is bonded, and the other end is connected with voltage source；Second face 82 of one end of solid metal electrode 92 and semiconductor wafer 8 is (with the A 81 opposite face on one side) it is bonded, the other end passes through the second side 1012 of support construction 101, is connected with voltage source；Partly lead There are packing material 100, packing material between body chip 8, hollow metal electrode 91, solid metal electrode 92 and support construction 101 100 require that semiconductor wafer 8, hollow metal electrode 91, solid metal electrode 92 is completely covered, and packing material 100 will be averaging It is resistant to field strength >=40kV/mm, as optical wavelength 200nm~1200nm, the transmitance of light is greater than 99%, the preferred epoxy of packing material Resin.
As shown in fig. 6, voltage source 200 is state pulse forming line.The pressure-resistant range and broad-band gap of state pulse forming line The pressure-resistant range of semiconductor devices 400 is identical, and state pulse forming line impedance and wide bandgap semiconductor device 400 are in laser irradiation Under conducting state minimum resistance it is identical.State pulse forming line is three slab constructions, according to metal plate-dielectric-metal plate-Jie Matter-metal plate structure is stacked together.Medium is with high energy storage density (> 1J/cm3) dielectric material, metallic sheet material Select silver.The connection type of voltage source 200 and wide bandgap semiconductor device 400 are as follows: 400 hollow metal of wide bandgap semiconductor device Electrode 91, solid metal electrode 92 are separately connected the intermetallic metal plate 202 and upper layer metal plate 201 or two electrodes of voltage source 200 Connect 200 intermetallic metal plate 202 of voltage source and lower metal plate 203.It (is gold among two electrodes connection voltage source 200 shown in Fig. 6 Belong to plate 202 and lower metal plate 203)
Radiant output component is the plate broadband radiation loudspeaker 300 to match with 200 impedance of voltage source, passes through SMA (SubMiniature version A) coaxial line is connected with wide bandgap semiconductor device 400, by wide bandgap semiconductor device 400 The high frequency electrical signal of output is radiated, and microwave signal output is generated.
Second step, high energy pulse cluster laser generates high energy pulse cluster laser, and exports height to wide bandgap semiconductor device Energy impulse cluster laser, method is:
2.1, synchronous control circuit 5 exports the 2 adjustable digital signals of tunnel repetition；
2.2, the first editable waveform signal plate 71 is in synchronized control the first via synchronization signal triggering of the output of circuit 5, root According to wide bandgap semiconductor device 400 to the electric pulse of parameter request editor the first editable waveform signal plate 71 of signal source pulsewidth Width sends the rectangular signal of adjustable pulse width to laser seed source 1；
2.3, laser seed source 1 receives the rectangular signal of the adjustable pulse width of the first editable waveform signal plate 71 output, produces The rectangle light pulse of raw adjustable pulse width, this light pulse repetition, pulsewidth is adjustable；
2.4, the rectangle optical pulse energy that laser seed source 1 exports is amplified to strong no more than electric light by optical fiber prime amplifier 2 The maximum of degree modulator 32 can bear power, and to promote signal-to-noise ratio, the laser pulse shape feature of output is waveform due to gain Saturation effect is distorted；
2.5, the second editable waveform signal plate 72 be in synchronized control circuit output the second tunnel synchronization signal triggering, output with The rectangular telecommunication number of first editable waveform signal plate, 71 same pulse width.
2.6, acousto-optic modulator 31 receives and the first editable waveform signal plate 71 from the second editable waveform signal plate 72 The rectangular telecommunication number of same pulse width, i.e., do not change the laser pulse shape of the output of optical fiber prime amplifier 2, and will have not been changed time domain wave The laser pulse of shape is sent to electro-optic intensity modulator 32；
2.7, high-frequency signal source 4 exports GHz magnitude frequency flexibly adjustable high frequency sinusoidal signal；
2.8, electro-optic intensity modulator 32 is according to will be from acousto-optic modulator from the received high frequency sinusoidal signal of high-frequency signal source 4 The 31 received Laser pulse modulators for having not been changed time domain waveform are the impulse cluster laser of identical envelope waveform, so that high in impulse cluster The repetition of frequency pulse and waveform are identical as from the received high frequency sinusoidal signal of high-frequency signal source 4, and impulse cluster laser is sent to Fiber amplifier 6；
2.9, test fiber amplifier 6 input pulse cluster laser envelope waveform, output impulse cluster laser envelope waveform and Impulse cluster laser energy is calculated and is contained by impulse cluster energy and input pulse cluster envelope waveform, output impulse cluster envelope waveform When input pulse cluster instantaneous power Pin(t and the impulse cluster instantaneous power P of output containing whenout(t), it imports in Matlab program and extracts The gain curve with time correlation is calculated as initial input output waveform in envelope waveform, by formula (1) curve matching Obtain initial gain G0E can be flowed with the saturation of amplifiersatParameter.Then rectangular envelope waveform is set as target output Envelop waves Shape, operation Matlab program (including random paralleling gradient descent algorithm) obtain predetermined waveform electric signal；
As shown in figure 4, the predetermined waveform electric signal is obtained using following methods:
2.9.1, rectangle, i.e. the second editable waveform letter are set by the output signal of the second editable waveform signal plate 72 Number 72 output signal of plate makes acousto-optic modulator 31 not change the laser pulse shape of the output of optical fiber prime amplifier 2.In this condition The lower input pulse cluster envelope waveform with high-speed oscilloscope, photodetector and power meter test fiber amplifier 6, output pulse Cluster envelope waveform and impulse cluster energy, by impulse cluster energy and input pulse cluster envelope waveform, output impulse cluster envelope waveform meter Calculation obtains the cluster instantaneous power of input pulse containing when Pin(t) and when containing impulse cluster instantaneous power P is exportedout(t)。
2.9.2, by obtained input pulse containing when cluster instantaneous power Pin(t) and when containing impulse cluster instantaneous power P is exportedout (t) Matlab program (including stochastic parallel gradient descent optimization algorithm) is imported, extracts envelope waveform, as random paralleling ladder Degree descent algorithm calculates initial input and output waveform when pre-compensating for waveform, such as 6 input pulse cluster of Fig. 4 (a) fiber amplifier Envelope waveform, ordinate are instantaneous power, and unit is watt that abscissa is the time, and unit is nanosecond, and Fig. 4 (b) is fiber amplifier 6 output impulse cluster envelope waveforms, ordinate is instantaneous power because power is exaggerated by fiber amplifier 6, unit be kilowatt, Abscissa is the time, and unit is nanosecond.
2.9.3, pass through formula G (t)=Pout(t)/Pin(t) the gain function G (t) with time correlation is calculated, according to Gain formula (1) in amplifier F-N model,
G (t)=1+ (G0-1)exp[-Eout(t)/Esat] (1)
Curve matching obtains initial gain G0E can be flowed with the saturation of amplifiersatParameter；
2.9.4, the target that rectangular envelope waveform is set as Matlab program is exported into envelope waveform, normalization target exports square Shown in shape envelope waveform such as Fig. 4 (c), in Fig. 4 (c), ordinate is normalized value, and abscissa is the time, and unit is nanosecond；
2.9.5, operation MATLAB program obtains predetermined waveform, shown in normalization predetermined waveform such as Fig. 4 (d), in Fig. 4 (d), Ordinate is normalized value, and abscissa is the time, and unit is nanosecond.
2.10, according to predetermined waveform electric signal, the output pulse waveform of the second editable waveform signal plate 72 is edited, so that Second editable waveform signal plate 72 exports predetermined waveform electric signal to acousto-optic modulator 31.
2.11, acousto-optic modulator 31 receives predetermined waveform electric signal from the second editable waveform signal plate 27, by predispersed fiber The optical pulse waveform that amplifier 2 exports is modulated to default time domain waveform light pulse, it is characterized in that waveform is by above step meter Obtained predetermined waveform, the impulse cluster envelope waveform that may make fiber amplifier 6 to export are rectangle, and by default time domain waveform Light pulses are to electro-optic intensity modulator 32.
2.12, electro-optic intensity modulator 32 is according to will be from acousto-optic modulation from the received high frequency sinusoidal signal of high-frequency signal source 4 The received default time domain waveform light pulse of device 31 is modulated to default envelope waveform impulse cluster laser, it is characterized in that impulse cluster form, And impulse cluster envelope is predetermined waveform so that in default envelope waveform impulse cluster laser the repetition of high-frequency impulse and waveform with from height The received high frequency sinusoidal signal of frequency source signal 4 is identical, and modulated impulse cluster laser is sent to fiber amplifier 6；
2.13, fiber amplifier 6 is carried out to from the received default envelope waveform impulse cluster laser of electro-optic intensity modulator 32 Amplification exports high energy pulse cluster laser, this repetition of impulse cluster laser, pulsewidth, envelope waveform, GHz to wide bandgap semiconductor device High frequency, pulse repetition is tunable.
Third step, voltage source 200 (i.e. pulse-forming line) generate pulse voltage, and high energy pulse cluster laser and pulse voltage are same When act on wide bandgap semiconductor device 400.I.e. only when high energy pulse cluster laser starts to irradiate semiconductor, voltage source is just applied Making alive, when light terminates irradiation, voltage-drop loading also accordingly terminates.
High energy pulse cluster laser utilizes optical waveguide or optical fiber, is irradiated to wide band gap semiconducter from hollow metal electrode 91 On device 400, change the resistance of wide bandgap semiconductor device 400, the resistance of wide bandgap semiconductor device 400 is with high energy pulse cluster The linear variation of the light intensity of laser, light intensity become larger, and resistance reduces.
Meanwhile wide bandgap semiconductor device 400 by pulsed-voltage control at identical as high energy pulse cluster Laser Modulation frequency High frequency electrical signal, and modulated high frequency electrical signal is sent to radiant output component.
4th step, radiant output component radiate high frequency electrical signal: radiant output component receives high frequency from wide band gap semiconducter Electric signal radiates high frequency electrical signal, generates microwave signal output.

Claims (16)

1. a kind of adaptive narrow spectrum microwave production method of light guide based on high energy pulse cluster laser, it is characterised in that including following step It is rapid:
The first step, adaptively narrow spectrum microwave generator, the adaptive narrow spectrum microwave generator of light guide modulate mould by circuit to building light guide Block and optical path modulation module two parts composition, wherein optical path modulation module is high energy pulse cluster laser, circuit modulation module by Voltage source (200), wide bandgap semiconductor device (400) and radiant output component (300) three parts composition, high energy pulse cluster laser Device is connect with wide bandgap semiconductor device (400) using optical fiber or optical waveguide；
High energy pulse cluster laser generates impulse cluster repetition, pulsewidth, envelope waveform, all adjustable laser of GHz high-frequency impulse repetition, It is input in wide bandgap semiconductor device (400) by optical fiber or optical waveguide；
High energy pulse cluster laser is by laser seed source (1), optical fiber prime amplifier (2), optical modulation module (3), high-frequency signal Source (4), synchronous control circuit (5), fiber amplifier (6), 2 pieces of editable waveform signal plates (7) i.e. the first editable waveform letter Number plate (71) and the second editable waveform signal plate (72) composition；Optical modulation module (3) is by acousto-optic modulator (31) and electric light Intensity modulator (32) composition, acousto-optic modulator (31) and electro-optic intensity modulator (32) are in a manner of fused fiber splice device tail optical fiber Connection；The output end in laser seed source (1) and the input terminal of optical fiber prime amplifier (2), optical fiber prime amplifier (2) output end with The output of the optic fibre input end, optical modulation module (3) of optic fibre input end, that is, acousto-optic modulator (31) of optical modulation module (3) The end i.e. fiber-optic output of electro-optic intensity modulator (32) and the input terminal of fiber amplifier (6) are by way of fused fiber splice Connection；The signal output end of the signal input part in laser seed source (1) and the first editable waveform signal plate (71) passes through coaxial Signal wire is connected；The of the outer triggering signal input terminal of first editable waveform signal plate (71) and synchronous control circuit (5) One output end is connected by coaxial signal line；The outer triggering signal input terminal of second editable waveform signal plate (72) with it is synchronous The second output terminal of control circuit (5) is connected by coaxial signal line, the signal output of the second editable waveform signal plate (72) End is connected with the signal input part of acousto-optic modulator (31) by coaxial signal line, the radiofrequency signal of electro-optic intensity modulator (32) Input terminal is connect with the signal output end of high-frequency signal source (4) with coaxial signal line；
Synchronous control circuit (5) is that the first editable waveform signal plate (71) and the second editable waveform signal plate (72) provide together Walk clock signal；First synchronous sequence signal of the first output end output is used to trigger the first editable waveform signal plate (71), Second synchronous sequence signal of second output terminal output is for triggering the second editable waveform signal plate (72)；
First editable waveform signal plate (71) is external trigger operating mode, same when receiving first from synchronous control circuit (5) When walking clock signal, electronic pulse width is edited in the requirement according to microwave system photocon to signal source pulsewidth, to laser seed Source (1) sends repetition and all adjustable rectangular signal of pulsewidth；
Laser seed source (1) uses semiconductor pulse laser seed source, according to the output of the first editable waveform signal plate (71) Rectangular signal generates the flexible adjustable laser seed pulse of pulse repetition, pulsewidth, amplitude, time domain waveform；
Optical fiber prime amplifier (2) carries out power raising to the laser seed pulse generated from laser seed source (1), and promotes conduct The signal-to-noise ratio of the high energy pulse cluster laser of microwave system photocon signal source；Optical fiber prime amplifier (2) is by M grades of fiber amplifiers Device composition, M >=1；
Second editable waveform signal plate (72) is external trigger operating mode, same when receiving second from synchronous control circuit (5) Predetermined waveform electric signal is sent to acousto-optic modulator (31) when walking clock signal；
Acousto-optic modulator (31) is fiber coupling acousto-optic modulator, and acousto-optic modulator (31) is on the one hand believed from the second editable waveform Number plate (72) receives predetermined waveform electric signal, and the optical pulse waveform that optical fiber prime amplifier (2) export is modulated to default time domain wave Shape light pulse, and give default time domain waveform light pulses to electro-optic intensity modulator (32)；Another aspect acousto-optic modulator (31) continuous spontaneous emission noise between the light pulse of shutdown optical fiber prime amplifier (2) output；
High-frequency signal source (4) is used to provide the adjustable GHz magnitude, high frequency sinusoidal signal of frequency for electro-optic intensity modulator (32), The voltage for asking high-frequency signal source (4) to export is greater than the half-wave voltage of electro-optic intensity modulator (32)；
The high frequency sinusoidal signal that electro-optic intensity modulator (32) is exported according to high-frequency signal source (4), will be from acousto-optic modulator (31) Received default time domain waveform light pulse is modulated to default envelope waveform impulse cluster laser, so that default envelope waveform impulse cluster swashs The repetition of high-frequency impulse and waveform are identical as from high-frequency signal source (4) received high frequency sinusoidal signal in light, and will be modulated Impulse cluster laser is sent to fiber amplifier (6)；
Fiber amplifier (6) is amplified to from the received default envelope waveform impulse cluster laser of electro-optic intensity modulator (32), Rectangular envelope impulse cluster is exported, fiber amplifier (6) is made of N grades of fiber amplifiers, N >=2；The output of fiber amplifier (6) End welding has end caps or isolator；
Wide bandgap semiconductor device (400) is connected by optical fiber or optical waveguide with high energy pulse cluster laser, and conductive silver paste is passed through It is connected with voltage source (200), is connected by coaxial line with radiant output component, under being acted on while laser and voltage, is generated High frequency electrical signal, and high frequency electrical signal is exported and gives radiant output component；Wide bandgap semiconductor device (400) is by semiconductor wafer (8), hollow metal electrode (91), solid metal electrode (92), packing material (100) and support construction (101) composition；
Voltage source (200) is that state pulse forming line is connected with the electrode of wide bandgap semiconductor device (400) with conductive silver paste, Pulse voltage is generated to act on wide bandgap semiconductor device (400)；
Radiant output component (300) is the plate broadband radiation loudspeaker to match with voltage source (200) impedance, coaxial by SMA Line is connected with wide bandgap semiconductor device (400)；
Second step, high energy pulse cluster laser generate high energy pulse cluster laser, export high energy to wide bandgap semiconductor device (400) Impulse cluster laser, method are:
2.1, synchronous control circuit (5) exports the 2 adjustable digital signals of tunnel repetition；
2.2, the first editable waveform signal plate (71) is in synchronized control the first via synchronization signal triggering of circuit (5) output, root According to wide bandgap semiconductor device (400) to the electricity of parameter request editor the first editable waveform signal plate (71) of signal source pulsewidth Pulse width sends the rectangular signal of adjustable pulse width to laser seed source (1)；
2.3, laser seed source (1) receives the rectangular signal of the adjustable pulse width of the first editable waveform signal plate (71) output, produces The rectangle light pulse of raw adjustable pulse width；
2.4, the rectangle optical pulse energy that laser seed source (1) exports is amplified to strong no more than electric light by optical fiber prime amplifier (2) The maximum of degree modulator (32) can bear power, to promote signal-to-noise ratio；
2.5, the second editable waveform signal plate (72) is in synchronized control the triggering of circuit output the second tunnel synchronization signal, output and the The rectangular telecommunication number of one editable waveform signal plate (71) same pulse width；
2.6, acousto-optic modulator (31) receives and the first editable waveform signal plate from the second editable waveform signal plate (72) (71) rectangular telecommunication number of same pulse width, i.e., do not change the laser pulse shape of optical fiber prime amplifier (2) output, and will have not been changed The laser pulse of time domain waveform is sent to electro-optic intensity modulator (32)；
2.7, high-frequency signal source (4) exports GHz magnitude frequency flexibly adjustable high frequency sinusoidal signal；
2.8, electro-optic intensity modulator (32) basis will be from acousto-optic modulator from high-frequency signal source (4) received high frequency sinusoidal signal (31) the received Laser pulse modulator for having not been changed time domain waveform is the impulse cluster laser of identical envelope waveform, so that in impulse cluster The repetition of high-frequency impulse and waveform are identical as from high-frequency signal source (4) received high frequency sinusoidal signal, and impulse cluster laser is sent out Give fiber amplifier (6)；
2.9, test the input pulse cluster laser envelope waveform, output impulse cluster laser envelope waveform and arteries and veins of fiber amplifier (6) Rush cluster laser energy Eout(t), it is calculated by impulse cluster energy and input pulse cluster envelope waveform, output impulse cluster envelope waveform To the cluster instantaneous power of input pulse containing when Pin(t and the impulse cluster instantaneous power P of output containing whenout(t), t is the time, importing include with Envelope waveform is extracted in the Matlab program of machine parallel gradient descent algorithm, as initial input output waveform, is calculated With the gain curve of time correlation, initial gain G is obtained through curve matching0E can be flowed with the saturation of amplifiersatThen parameter will Rectangular envelope waveform is set as target output envelope waveform, and operation Matlab program obtains predetermined waveform electric signal；
2.10, according to predetermined waveform electric signal, the output pulse waveform of the second editable waveform signal plate (72) is edited, so that the Two editable waveform signal plates (72) export predetermined waveform electric signal to acousto-optic modulator (31)；
2.11, acousto-optic modulator (31) receives predetermined waveform electric signal from the second editable waveform signal plate 27, and predispersed fiber is put The optical pulse waveform of big device (2) output is modulated to default time domain waveform light pulse, and default time domain waveform light pulses are given Electro-optic intensity modulator (32)；
2.12, electro-optic intensity modulator (32) basis will be from acousto-optic modulation from high-frequency signal source (4) received high frequency sinusoidal signal The received default time domain waveform light pulse of device (31) is modulated to default envelope waveform impulse cluster laser, presets envelope waveform impulse cluster Laser is impulse cluster form and impulse cluster envelope is predetermined waveform, so that high-frequency impulse in default envelope waveform impulse cluster laser Repetition and waveform it is identical as from high-frequency signal source (4) received high frequency sinusoidal signal, and by modulated impulse cluster laser send out Give fiber amplifier (6)；
2.13, fiber amplifier (6) is carried out to from the received default envelope waveform impulse cluster laser of electro-optic intensity modulator (32) Amplification exports high energy pulse cluster laser, this repetition of impulse cluster laser, pulsewidth, Envelop waves to wide bandgap semiconductor device (400) Shape, GHz high frequency, pulse repetition is tunable；
Third step, voltage source (200) generate pulse voltage, and high energy pulse cluster laser and pulse voltage act on broad-band gap half simultaneously Conductor device (400)；High energy pulse cluster laser utilizes optical waveguide or optical fiber, is irradiated to broadband from hollow metal electrode (91) On gap semiconductor device (400), change the resistance of wide bandgap semiconductor device (400), the electricity of wide bandgap semiconductor device (400) The linear variation of light intensity with high energy pulse cluster laser is hindered, light intensity becomes larger, and resistance reduces；Meanwhile wide bandgap semiconductor device (400) by pulsed-voltage control at high frequency electrical signal identical with high energy pulse cluster Laser Modulation frequency, and by modulated height Frequency electric signal is sent to radiant output component (300)；
4th step, radiant output component (300) radiate high frequency electrical signal: radiant output component (300) is from wide band gap semiconducter device Part (400) receives high frequency electrical signal, radiates to high frequency electrical signal, generates microwave signal output.
2. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as described in claim 1, It is characterized in that first synchronous sequence signal of the synchronous control circuit (5) output and the second synchronous sequence signal is that pulsewidth can Adjust, repetition is adjustable, amplitude is the standard digital trigger signal of 2.5V~5V, and the first synchronous sequence signal and the second synchronous sequence Time jitter is less than 5ns between signal pulse.
3. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as described in claim 1, Be characterized in that the laser seed source (1) central wavelength range be 1030nm~1065nm, pulse duration range be 10ns~ 200ns, repetition range are 10Hz~200kHz.
4. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as described in claim 1, The mean power and peak power for being characterized in that optical fiber prime amplifier (2) output laser pulse are less than or equal to electro-optic intensity tune The maximum of device (32) processed bears power.
5. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as described in claim 1, It is characterized in that the acousto-optic modulator (31) band is wider than 100MHz, the bandwidth of operation of the electro-optic intensity modulator (32) is greater than Equal to 10GHz.
6. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as described in claim 1, It is characterized in that the high-frequency signal source (4) are voltage-controlled frequency variable oscillation device, frequency synthesizer, arbitrary waveform generator, function generation Any one in device, or be any one in voltage-controlled frequency variable oscillation device, frequency synthesizer, arbitrary waveform generator, function generator The combination of kind and power amplifier.
7. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as described in claim 1, Be characterized in that the semiconductor wafer (8) of the wide bandgap semiconductor device (400) is connected with 2 electrodes, semiconductor wafer (8) by Substrate material, transparency conducting layer, high pressure resistant passivation layer, becket, silver coating are constituted；Substrate material uses high ohmic semiconductor, High ohmic semiconductor is prepared with transparency conducting layer on front, is prepared with high pressure resistant passivation layer over transparent conductive layer, high pressure resistant blunt The surrounding for changing layer has a becket close-fitting transparent conductive layer, and the upper surface of becket is close to hollow metal electrode (91)；High resistance Semiconductor back surface is prepared with silver coating, connect with solid metal electrode (92)；Support construction (101) is to use polytetrafluoroethylene material The rectangle uncovered box being processed into, hollow metal electrode (91) pass through the first side 1011 of support construction (101), one end and half First face 81 of conductor chip (8) is bonded, and the other end is connected with voltage source (200)；One end of solid metal electrode (92) and half Second face 82 of conductor chip (8) is bonded, and the other end passes through the second side 1012 of support construction (101), with voltage source (200) It is connected；There is filling between semiconductor wafer (8), hollow metal electrode (91), solid metal electrode (92) and support construction (101) Material (100), packing material (100) require that semiconductor wafer (8), hollow metal electrode (91), solid metal electricity is completely covered Pole (92).
8. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as claimed in claim 7, The semiconductor wafer (8) for being characterized in that the wide bandgap semiconductor device (400) is square sheet or thin rounded flakes, with a thickness of 0.01mm~10mm, side length is 1mm~50mm when being square sheet, and diameter is 1mm~50mm when being thin rounded flakes.
9. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as claimed in claim 7, It is characterized in that the high ohmic semiconductor selection broad-band gap SiC material of the wide bandgap semiconductor device (400), resistance to pressure request is 3 The recombination time of~4MV/cm, SiC crystal carrier are less than 1ns.
10. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as claimed in claim 9, It is characterized in that the SiC material refers to 4H-SiC or 6H-SiC material.
11. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as claimed in claim 7, The hollow metal electrode (91) and solid metal electrode (92) material for being characterized in that the wide bandgap semiconductor device (400) are not Become rusty steel or brass；The side length or straight of the diameter of hollow metal electrode (91) and solid metal electrode (92) and semiconductor wafer (8) The ratio of diameter is maintained between 1~1.5；The company of hollow metal electrode (91) and solid metal electrode (92) and semiconductor wafer (8) It connects and is mutually bonded using conductive silver glue.
12. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as claimed in claim 7, It is characterized in that the packing material (100) of the wide bandgap semiconductor device (400) will be averaging tolerance field strength >=40kV/mm, when When optical wavelength 200nm~1200nm, the transmitance of light is greater than 99%.
13. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as claimed in claim 12, It is characterized in that the packing material is epoxy resin.
14. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as described in claim 1, It is characterized in that the pressure-resistant range of the state pulse forming line is identical as the pressure-resistant range of wide bandgap semiconductor device (400), Gu State pulse shaping line impedence is identical as conducting state minimum resistance of the wide bandgap semiconductor device (400) under laser irradiation.
15. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as described in claim 1, It is characterized in that the state pulse forming line is three slab constructions, according to metal plate-dielectric-metal plate-dielectric-metal plate knot Structure is stacked together；Medium is energy storage density > 1J/cm3Dielectric material, metallic sheet material select silver；Voltage source (200) and width The connection type of bandgap semiconductor device (400) are as follows: the hollow metal electrode (91) of wide bandgap semiconductor device (400) and solid Metal electrode (92) is separately connected the intermetallic metal plate 202 and upper layer metal plate 201 or hollow metal electrode of voltage source (200) (91) and solid metal electrode (92) connection voltage source (200) intermetallic metal plate 202 and lower metal plate 203.
16. the adaptive narrow spectrum microwave production method of a kind of light guide based on high energy pulse cluster laser as described in claim 1, It is characterized in that the predetermined waveform electric signal of the second editable waveform signal plate (72) described in 2.9 steps is obtained using following methods:
2.9.1, rectangle is set by the output signal of the second editable waveform signal plate (72), uses high speed oscillography with this condition Device, the input pulse cluster envelope waveform of photodetector and power meter test fiber amplifier (6), output impulse cluster envelope waveform With impulse cluster energy, by impulse cluster energy and input pulse cluster envelope waveform, output impulse cluster envelope waveform be calculated containing when Input pulse cluster instantaneous power Pin(t) and when containing impulse cluster instantaneous power P is exportedout(t)；
2.9.2 by Pin(t) and Pout(t) the Matlab program for including stochastic parallel gradient descent optimization algorithm is imported, packet is extracted Network waveform calculates initial input and output waveform when pre-compensating for waveform as stochastic parallel gradient descent optimization algorithm；
2.9.3, pass through formula G (t)=Pout(t)/Pin(t) the gain function G (t) with time correlation is calculated, according to amplification Gain formula (1) in device F-N model,
G (t)=1+ (G0-1)exp[-Eout(t)/Esat] (1)
Curve matching obtains initial gain G0E can be flowed with the saturation of amplifiersatParameter；
2.9.4, the target that rectangular envelope waveform is set as Matlab program is exported into envelope waveform；
2.9.5, operation MATLAB program obtains predetermined waveform electric signal.
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