CN110265854A - Light guide self-adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser - Google Patents

Abstract

The invention discloses a light guide self-adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser, and aims to solve the problems that a microwave generation device in the existing microwave generation method is large in size, single in frequency point and difficult to adjust frequency. The technical scheme is that a light guide self-adaptive narrow-spectrum microwave generator which consists of a high-energy pulse cluster laser, a voltage source, a wide-band-gap semiconductor device and a radiation output assembly is constructed; the high-energy pulse cluster laser outputs high-energy pulse cluster laser with adjustable pulse cluster repetition frequency, pulse width, envelope waveform and GHz high-frequency pulse repetition frequency to the wide-band gap semiconductor device; the voltage source is a solid pulse forming line which generates pulse voltage to act on the wide band gap semiconductor device; the wide band gap semiconductor device generates a high-frequency electric signal under the simultaneous action of laser and voltage; the radiation output assembly radiates the high-frequency electric signal and outputs a microwave signal. The invention can solve the problems of large volume, single frequency point and difficult frequency adjustment of microwave generating devices.

Description

A light-guided adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser

technical field

The invention relates to a high-power microwave generation method—a narrow-spectrum microwave generation method based on high-repetition-frequency pulse laser and wide-bandgap photoconductive semiconductor.

Background technique

Through strong electromagnetic radiation, high-power microwave interferes, disrupts, and damages the electronic information system of equipment, degrading or invalidating its function, and can effectively improve information countermeasures.

In order to cope with the increasingly complex electromagnetic environment of threat targets in the field of information technology and the continuous emergence of new waveforms and new spectrums, it is urgent to develop a new adaptive directed energy microwave generation method with flexible and adjustable parameters. Traditional high-power microwave generation methods are based on pulsed power devices and relativistic electric vacuum devices, which have been developed for 40-50 years. The output microwave parameters are usually fixed, and the frequency point is single or difficult to adjust. This is because relativistic vacuum devices usually have a narrow operating frequency range and are mechanically structured, making adjustment difficult. Moreover, electric vacuum devices need to operate in a vacuum environment, resulting in bulky microwave generation devices designed using this method.

The use of photoconductive semiconductors to generate microwaves is a new direction of research in recent years. At present, public reports at home and abroad are using photoconductive semiconductors as fast cut-off switches, that is, using the properties of fast conduction of photoconductive semiconductor switches to generate a pulse voltage with a steep front. , and then irradiated to generate broadband or ultra-broadband signals, the role of photoconductive semiconductors in these reports is like a switching oscillator. For example, the document "Photoconductive Switch-Based HPM for Airborne Counter-IED Applications (a high-power microwave generator for airborne anti-improvised explosive devices based on a photoconductive switch), IEEE Transactions on Plasma Science (IEEE Plasma Science Journal), 2014, No. 42, Volume 5, Pages 1285-1294" describes a method of making a broadband microwave signal generator using the conduction characteristics of photoconductive switches. This method uses the fast conduction characteristics of photoconductive switches to cut off the DC bias voltage and generate a The electrical signal with a steep rising edge, and then radiated by a broadband antenna to generate a broadband signal; because the energy of the broadband is dispersed in frequency, and the low-frequency component is limited by the size of the antenna, it is relatively difficult to directional radiation, so the generated microwave power "equivalent radiated power" Low, so the generated microwave power is low, and the microwave signal output by this scheme is on the order of hundreds of watts.

Contents of the invention

The technical problem to be solved by the present invention is to propose a high-repetition-frequency pulse laser-based Lightguide Adaptive Narrowband Microwave Generation Method. Using the linear working mode of the wide bandgap photoconductive semiconductor device at high voltage and high current level (in the linear working mode, a photon enters the device, a pair of hole-electron pairs is generated in the device, and the electric field generated by the electron in the external voltage Move under the action of the laser, and then form a current; the current generated by this mode has the same waveform and frequency as the incident laser. Under the external bias voltage, the wide-bandgap photoconductive semiconductor device is irradiated by the high-repetition-frequency laser to generate high-frequency electrical signals. , and radiate output to produce a microwave signal.

Concrete technical scheme of the present invention comprises the following steps:

The first step is to build a light-guided adaptive narrow-spectrum microwave generator. The microwave generator is composed of a circuit modulation module and an optical path modulation module. The optical path modulation module is a high-energy pulse cluster laser that can be used as a signal source for microwave system photoconductive devices. , referred to as a high-energy pulse cluster laser, the circuit modulation module consists of three parts: a voltage source, a wide bandgap semiconductor device and a radiation output component. The high-energy pulse cluster laser is connected to the wide-bandgap semiconductor device by optical fiber or optical waveguide.

High-energy pulse cluster lasers produce lasers with adjustable pulse cluster repetition frequency, pulse width, envelope waveform, and GHz high-frequency pulse repetition frequency, which are input into wide-bandgap semiconductor devices through optical fibers or optical waveguides.

The high-energy pulse cluster laser consists of a laser seed source, an optical fiber pre-amplifier, an optical modulation module, a high-frequency signal source, a synchronous control circuit, an optical fiber amplifier, and two editable waveform signal boards (namely, the first editable waveform signal board and the second editable waveform signal board) Waveform signal board) composition. The optical modulation module is composed of an acousto-optic modulator and an electro-optic intensity modulator, and the acousto-optic modulator and the electro-optic intensity modulator are connected by means of optical fiber fusion splicing device pigtails. The output end of the laser seed source and the input end of the optical fiber preamplifier, the output end of the optical fiber preamplifier and the optical fiber input end of the optical modulation module (that is, the optical fiber input end of the acousto-optic modulator), the output end of the optical modulation module (that is, the electro-optic intensity The optical fiber output end of the modulator) and the input end of the optical fiber amplifier are connected by optical fiber fusion, and the output end of the optical fiber amplifier is fused with an end cap or an isolator. And the signal input end of the laser seed source is connected to the signal output end of the first editable waveform signal board through a coaxial signal line; the external trigger signal input end of the first editable waveform signal board is connected to the first output end of the synchronous control circuit through Coaxial signal line connection; the external trigger signal input end of the second editable waveform signal board is connected with the second output end of the synchronous control circuit through the coaxial signal line, and the signal output end of the second editable waveform signal board is connected with the acousto-optic modulation The signal input terminal of the device is connected through a coaxial signal line. The radio frequency signal input end of the electro-optic intensity modulator is connected with the signal output end of the high-frequency signal source by a coaxial signal line.

The synchronous control circuit provides synchronous timing signals for the first editable waveform signal board and the second editable waveform signal board. The first synchronous timing signal output from the first output terminal of the synchronous control circuit is used to trigger the first editable waveform signal board, and the second synchronous timing signal output from the second output terminal is used to trigger the second editable waveform signal board. The two synchronous timing signals are required to be standard digital trigger signals with adjustable pulse width, adjustable repetition frequency, and an amplitude of 2.5V to 5V, and the time jitter between the first synchronous timing signal and the second synchronous timing signal pulse is less than 5ns.

The first editable waveform signal board is in the external trigger mode. When the first synchronous timing signal is received from the synchronous control circuit, the electrical pulse width is edited according to the requirements of the microwave system photoconductive device for the pulse width of the signal source, and the laser seed source Send a rectangular signal with adjustable repetition frequency and pulse width.

The laser seed source adopts a semiconductor pulse laser seed source, which can generate a laser with flexible and adjustable pulse repetition frequency, pulse width, amplitude and time domain waveform according to the rectangular signal output by the editable waveform signal board. Seed pulse. It is required that the center wavelength range of the semiconductor pulse laser seed source is 1030nm-1065nm, the pulse width range is 10ns-200ns, and the repetition frequency range is 10Hz-200kHz.

The optical fiber pre-amplifier increases the power of the laser seed pulse generated from the laser seed source, and improves the signal-to-noise ratio of the high-energy pulse cluster laser. The optical fiber pre-amplifier is composed of M (M≥1) class optical fiber amplifiers. It is required that the average power and peak power of the laser pulse output by the fiber pre-amplifier be less than or equal to the maximum withstand power of the electro-optical intensity modulator.

The second editable waveform signal board is in an external trigger mode, and sends a preset waveform electrical signal to the acousto-optic modulator when the second synchronous timing signal is received from the synchronous control circuit.

The gain saturation effect of the fiber pre-amplifier and the fiber amplifier will cause the amplified laser pulse shape to be different from the input laser pulse shape they receive, that is, the amplified laser pulse shape will be distorted. In order to be used as the signal source of the microwave system photoconductive device, the present invention needs to output the rectangular envelope pulse cluster laser (that is, the optical fiber amplifier of the present invention must output the rectangular envelope pulse cluster laser), so it is necessary to preset the waveform of the input signal of the optical fiber amplifier, This is accomplished by sending preset waveform electrical signals from the editable waveform signal board to the AOM.

The acousto-optic modulator is a fiber-coupled acousto-optic modulator with a bandwidth greater than 100MHz. On the one hand, the acousto-optic modulator receives the preset waveform electrical signal from the second editable waveform signal board, modulates the optical pulse waveform output by the optical fiber pre-amplifier into a preset time-domain waveform optical pulse, and sends the preset time-domain waveform optical pulse For the electro-optic intensity modulator; on the other hand, the acousto-optic modulator turns off the continuous spontaneous emission noise between the optical pulses output by the fiber preamplifier.

The high-frequency signal source is used to provide a GHz level high-frequency sinusoidal signal with flexible and adjustable frequency for the electro-optic intensity modulator. The high-frequency signal source can be any one of voltage-controlled frequency-variable oscillator, frequency synthesizer, arbitrary waveform generator, and function generator, or it can be a voltage-controlled frequency-variable oscillator, frequency synthesizer, arbitrary waveform generator, function A combination of any generator and power amplifier. It is required that the output voltage of the high-frequency signal source is greater than the half-wave voltage of the electro-optical intensity modulator.

The operating bandwidth of the electro-optical intensity modulator is greater than or equal to 10GHz. According to the high-frequency sinusoidal signal output by the high-frequency signal source, the electro-optical intensity modulator modulates the preset time-domain waveform light pulse received from the acousto-optic modulator into a preset envelope waveform pulse cluster laser, so that the preset envelope waveform pulse cluster The repetition frequency and waveform of the high-frequency pulse in the laser are the same as the high-frequency sinusoidal signal received from the high-frequency signal source, and the modulated pulse cluster laser is sent to the fiber amplifier.

The optical fiber amplifier amplifies the preset envelope waveform pulse cluster laser received from the electro-optical intensity modulator, and outputs a rectangular envelope pulse cluster. The optical fiber amplifier is composed of N (N≥2) level optical fiber amplifiers. The output end of the fiber amplifier is fused with a fiber end cap or an isolator to prevent damage to the high-energy pulse cluster laser caused by the return light from the end face.

The voltage source is a solid-state pulse forming line, which is connected with the electrode of the wide bandgap semiconductor device with conductive silver paste, and generates pulse voltage to act on the wide bandgap semiconductor device.

Wide bandgap semiconductor devices are connected to high-energy pulse cluster lasers through optical fibers or optical waveguides, connected to voltage sources through conductive silver paste, and connected to radiation output components through coaxial lines. Under the simultaneous action of laser and voltage, high-frequency electrical signals are generated. And output the high-frequency electrical signal to the radiation output component.

The wide bandgap semiconductor device consists of four parts: a semiconductor wafer (i.e. substrate), 2 electrodes, a filling material and a support structure. The combination of 8 semiconductor wafers and 2 electrodes is connected with the patent "opposite positive incident light type" with application number 201710616299.7. High-power photoconductive switch device and its manufacturing method" described in the "opposite positive incident light type high-power photoconductive switch device" has the same structure: use high-resistance semiconductor as substrate material, prepare transparent conductive layer on high-resistance semiconductor (front side) , prepare a high-voltage passivation layer with an anti-reflection effect on the transparent conductive layer. There is a metal ring around the high-voltage passivation layer that is close to the transparent conductive layer, and then connected to the hollow metal electrode (that is, the top of the metal ring is close to the hollow metal electrode); the back of the high-resistance semiconductor is first prepared with a silver-plated layer with high reflectivity, and then connected to a solid metal electrode. The hollow metal electrode and the solid metal electrode are two electrodes in the present invention, and all the other parts (i.e., substrate material, transparent conductive layer, high-voltage resistant passivation layer, metal ring, silver-plated layer) are semiconductor used in the present invention. wafer. The semiconductor wafer can be a square sheet or a circular sheet, with a thickness of 0.01 mm to 10 mm, a side length of 1 mm to 50 mm for a square sheet, and a diameter of 1 mm to 50 mm for a circular sheet. The semiconductor wafer substrate material, that is, the high-resistance semiconductor, chooses a wide bandgap SiC material, such as 4H-SiC or 6H-SiC material. The withstand voltage requirement is 3-4MV/cm, and the recombination time of SiC crystal carriers is less than 1ns. Hollow metal electrode and solid metal electrode material can be stainless steel or brass; The ratio of the diameter of hollow metal electrode and solid metal electrode to the side length or diameter of semiconductor wafer is kept between 1～1.5; Hollow metal electrode and solid metal electrode and The connection of the semiconductor chip is bonded with conductive silver glue, and the silver glue is cured after baking. The support structure is a rectangular box without a cover processed by polytetrafluoroethylene material, the hollow metal electrode passes through the first side of the support structure, one end is bonded to the first surface of the semiconductor wafer, and the other end is connected to the voltage source; the solid metal electrode One end of one end is bonded to the second face (a face opposite to the first face) of the semiconductor wafer, and the other end passes through the second side of the support structure and is connected to the voltage source; the semiconductor wafer 8, the hollow metal electrode, the solid metal electrode and There is a filling material between the supporting structures. The filling material is required to completely cover the semiconductor wafer, hollow metal electrode, and solid metal electrode. The filling material 100 requires an average withstand field strength of ≥ 40kV/mm. When the light wavelength is 200nm to 1200nm, the transmission of light The ratio is greater than 99%, and the filling material is preferably epoxy resin.

The voltage source is a solid state pulse forming line. The withstand voltage range of the solid-state pulse forming line should be the same as that of the wide bandgap semiconductor device, and the impedance of the solid state pulse forming line should be the same as the on-state minimum resistance of the wide bandgap semiconductor device under laser irradiation. The solid-state pulse forming line has a three-plate structure, which is stacked together according to the structure of metal plate-dielectric-metal plate-medium-metal plate. The medium is a dielectric material with high energy storage density (>1J/cm ³ ), and the metal plate is made of silver. The connection mode between the voltage source and the wide bandgap semiconductor device is: two electrodes of the wide bandgap semiconductor device, the middle metal plate and the upper metal plate that can be connected to the voltage source respectively, and the two electrodes can also be connected to the middle metal plate and the lower metal plate of the voltage source.

The radiation output component is a flat-panel broadband radiation horn that matches the impedance of the voltage source. It is connected to the wide-bandgap semiconductor device through the SMA (SubMiniature version A) coaxial line, and radiates the high-frequency electrical signal output by the wide-bandgap semiconductor device to generate microwave signals. output.

In the second step, the high-energy pulse cluster laser generates high-energy pulse cluster laser and outputs high-energy pulse cluster laser to the wide bandgap semiconductor device. The repetition frequency, pulse width, envelope waveform, and GHz high-frequency pulse repetition frequency of this high-energy pulse cluster laser can all be used. Tuning, by:

2.1, the synchronous control circuit outputs 2 channels of digital signals with adjustable repetition frequency;

2.2. The first editable waveform signal board is triggered by the first synchronous signal output by the synchronous control circuit, and the electric pulse width of the first editable waveform signal board is edited according to the pulse width parameter requirements of the microwave system photoconductive device for the signal source, and sent to the laser The seed source sends a rectangular signal with adjustable pulse width;

2.3. The laser seed source receives the rectangular signal with adjustable pulse width output by the first editable waveform signal board, and generates a rectangular optical pulse with adjustable pulse width. The repetition frequency and pulse width of this optical pulse can be adjusted;

2.4. The optical fiber pre-amplifier amplifies the energy of the rectangular optical pulse output by the laser seed source to the maximum acceptable power of the electro-optical intensity modulator to improve the signal-to-noise ratio. The output laser pulse waveform is characterized by distortion due to the gain saturation effect ;

2.5. The second editable waveform signal board is triggered by the second synchronization signal output by the synchronization control circuit, and outputs a rectangular electrical signal with the same pulse width as the first editable waveform signal board.

2.6, the acousto-optic modulator receives a rectangular electrical signal with the same pulse width as the first editable waveform signal board from the second editable waveform signal board, that is, the laser pulse waveform output by the fiber preamplifier is not changed, and the time domain waveform is not changed The laser pulse is sent to the electro-optic intensity modulator;

2.7, the high-frequency signal source outputs a high-frequency sinusoidal signal with a flexible and adjustable frequency of GHz order;

2.8. According to the high-frequency sinusoidal signal received from the high-frequency signal source, the electro-optic intensity modulator modulates the laser pulse received from the acousto-optic modulator into a pulse cluster laser with the same envelope waveform, so that the high The repetition frequency and waveform of the high-frequency pulse are the same as the high-frequency sinusoidal signal received from the high-frequency signal source, and the pulse cluster laser is sent to the fiber amplifier;

2.9, Test the input pulse cluster laser envelope waveform, output pulse cluster laser envelope waveform and pulse cluster laser energy of the fiber amplifier, and calculate the time-dependent input from the pulse cluster energy, input pulse cluster envelope waveform, and output pulse cluster envelope waveform The instantaneous power P _in (t) of the pulse cluster and the instantaneous power P _out (t) of the time-containing output pulse cluster are imported into the Matlab program (including a random parallel gradient descent algorithm) to extract the envelope waveform as the initial input and output waveform, and thus calculate Obtain the gain curve relevant to time, obtain initial gain G by formula (1) curve fitting ₀ and the saturated energy flow E _sat parameter of amplifier.Then the rectangular envelope waveform is set as the target output envelope waveform, and the operation Matlab program obtains the preset A waveform electrical signal is set; the preset waveform electrical signal is obtained by the following method:

2.9.1, Set the output signal of the second editable waveform signal board as a rectangle, that is, the output signal of the second editable waveform signal board makes the acousto-optic modulator not change the laser pulse waveform output by the optical fiber pre-amplifier. Under this condition, use a high-speed oscilloscope, photodetector and power meter to test the input pulse cluster envelope waveform, output pulse cluster envelope waveform and pulse cluster energy E _out (t) of the fiber amplifier. The time-dependent input pulse cluster instantaneous power P _in (t) and the time-dependent output pulse cluster instantaneous power P _out (t) are calculated from the envelope waveform and the output pulse cluster envelope waveform, where t is time.

2.9.2, import the obtained time-dependent input pulse cluster instantaneous power P _in (t) and time-dependent output pulse cluster instantaneous power P _out (t) into the Matlab program, extract the envelope waveform, and use it as a random parallel gradient descent algorithm to calculate the predicted Initial input and output waveforms when compensating the waveform.

2.9.3. Calculate the time-related gain function G(t) through the formula G(t)=P _out (t)/P _in (t). According to the gain formula (1) in the amplifier FN model,

G(t)＝1+(G ₀ -1)exp[-E _out (t)/E _sat ] (1)

Curve fitting obtains initial gain G ₀ and the saturated energy flow E _sat parameter of amplifier;

2.9.4, set the rectangular envelope waveform as the target output envelope waveform of the Matlab program, and normalize the target output rectangular envelope waveform;

2.9.5, run the MATLAB program to get the preset waveform.

2.10. Edit the output pulse waveform of the second editable waveform signal board according to the preset waveform electrical signal, so that the second editable waveform signal board outputs the preset waveform electrical signal to the acousto-optic modulator.

2.11, the acousto-optic modulator receives the preset waveform electrical signal from the second editable waveform signal board, and modulates the optical pulse waveform output by the optical fiber pre-amplifier into a preset time-domain waveform optical pulse, which is characterized in that the waveform is calculated through the above steps The preset waveform can make the pulse cluster envelope waveform output by the fiber amplifier into a rectangle, and send the preset time-domain waveform optical pulse to the electro-optical intensity modulator.

2.12, the electro-optical intensity modulator modulates the preset time-domain waveform light pulse received from the acousto-optic modulator into a preset envelope waveform pulse cluster laser according to the high-frequency sinusoidal signal received from the high-frequency signal source, which is characterized by the pulse cluster form , and the pulse cluster envelope is a preset waveform, so that the repetition frequency and waveform of the high-frequency pulse in the preset envelope waveform pulse cluster laser are the same as the high-frequency sinusoidal signal received from the high-frequency signal source, and the modulated pulse cluster The laser light is sent to the fiber amplifier;

2.13. The fiber amplifier amplifies the preset envelope waveform pulse cluster laser received from the electro-optical intensity modulator, and outputs high-energy pulse cluster laser to the wide bandgap semiconductor device. The pulse cluster laser repetition frequency, pulse width, envelope waveform, GHz high Frequency pulse repetition frequency can be tuned.

In the third step, the voltage source (pulse forming line) generates a pulse voltage, and the high-energy pulse cluster laser and the pulse voltage act on the wide bandgap semiconductor device at the same time. That is, the voltage source applies voltage only when the high-energy pulse cluster laser starts to irradiate the semiconductor, and when the light irradiation ends, the voltage loading ends accordingly.

The high-energy pulse cluster laser uses optical waveguide or optical fiber to irradiate the wide bandgap semiconductor device from the hollow metal electrode to change the resistance of the wide bandgap semiconductor device (here the wide bandgap photoconductive semiconductor device is essentially equivalent to a variable resistor, and its internal resistance According to the change of the laser light intensity), the resistance of the wide bandgap semiconductor device changes linearly with the light intensity of the high-energy pulse cluster laser, and the light intensity becomes larger and the resistance decreases.

At the same time, the wide-bandgap semiconductor device modulates the pulse voltage into a high-frequency electrical signal with the same frequency as the modulation frequency of the high-energy pulse cluster laser (the wide-bandgap semiconductor device works in a linear mode, that is, a photon incident into the device generates a pair of hole-electron pairs, and electrons in the It moves under the action of the electric field generated by the applied voltage, and then generates a current; the current generated by this mode has the same waveform and frequency as the incident laser; this working mode is based on Ohm's law "I=U/R", and the pulse voltage U during the modulation process Constant, the resistance R changes in inverse proportion with the light intensity, so the current I output by the wide bandgap semiconductor device changes in direct proportion to the light intensity, so the periodically changing light intensity (that is, the high-energy pulse cluster laser) produces a periodically changing current. Both have the same frequency), and send the modulated high-frequency electrical signal to the radiation output component.

Step 4: The radiation output component radiates high-frequency electrical signals: the radiation output component receives high-frequency electrical signals from the wide bandgap semiconductor device, radiates the high-frequency electrical signals, and generates microwave signal output.

The light guide self-adaptive narrow-spectrum microwave generator constructed in the first step of the present invention has the characteristics of modularization, solidification and intelligence.

Compared with traditional high-power microwave generation methods based on pulsed power and relativistic vacuum tubes, the present invention has the following technical features:

1. Flexible output microwave frequency - the parameters can be adjusted freely and flexibly, which has the natural advantage of "intelligence". In the linear mode of the wide bandgap semiconductor device of the present invention, one photon incident into the SiC crystal will generate an electron (carrier), so the current in the SiC crystal is completely controlled by the high-energy pulse cluster laser, because the carrier in the SiC crystal has With a recombination time of less than 1 ns, the semiconductor device can respond to an input optical signal of GHz and output an electrical signal of GHz. The electrical signal output by the wide bandgap semiconductor device is consistent with the modulation frequency of the high-energy pulse cluster laser input to the device. The output frequency mainly depends on the modulation frequency of the high-energy pulse cluster laser, unlike a traditional high-power microwave device that only corresponds to one frequency point. In the present invention, by changing the modulation frequency of the high-energy pulse cluster laser (see step 2.7, the high-frequency signal source outputs a high-frequency sinusoidal signal with a flexible and adjustable frequency of GHz magnitude; adjusting the output frequency of the high-frequency signal source can change the high-energy pulse cluster laser. Modulation frequency) can realize the modulation of microwave frequency 10 times frequency, that is, adjustable from 0.1GHz to 1GHz, and the recombination time of SiC crystal carriers limits the upper limit of frequency modulation.

2. The microwave produced by the present invention has a high repetition rate capability—the repetition rate of the present invention depends on the repetition rate of the high-energy pulse cluster laser, and is only limited by the supply power of the equipment (such as armored vehicles, ships, and fighter jets) carrying the present invention . The repetition frequency of the existing electric vacuum scheme is only tens to 100 Hz, and the repetition frequency range of the high-energy pulse cluster laser in the present invention is 10 Hz to 200 kHz, so the present invention can realize a higher repetition frequency.

3. The light guide adaptive narrow-spectrum microwave generator constructed in the first step of the present invention has high reliability—all units are solid-state, and the system does not require gas spark switch, vacuum electron beam and its ancillary equipment like traditional high-power microwave systems , so the space utilization efficiency is high, the structure is compact, the volume is small, the reliability is higher, and the platform adaptability is stronger.

4. Stronger mobility - the light guide adaptive narrow-spectrum microwave generator produced in the first step of the present invention has the advantages of lighter weight and smaller volume. When it is mounted on the equipment, it can simultaneously allow the platform to add additional Energy storage system to enhance attack power.

5. The wide bandgap semiconductor device in the present invention works in a linear mode, that is, a photon incident into the device produces a pair of hole-electron pairs, and the electrons move under the action of the electric field generated by the applied voltage, thereby generating current; The current and incident laser light have consistent waveforms and frequencies. Therefore, the present invention can regard the photoconductive semiconductor as a "photoconductive amplifier" through high-frequency light regulation, and what it produces is a narrow-spectrum microwave signal (when the pulse width of the microwave signal is 100ns, the spectral width is on the order of 10MHz, or the relative bandwidth is on the order of 1%) , with better directional emission and higher microwave energy.

6. The present invention uses filling materials to fill wide-bandgap semiconductor devices, avoiding air flashover breakdown along the surface, improving the withstand voltage of semiconductor devices, and also improving the power capacity of microwave generators.

The invention has broad application prospects in the fields of new-generation high-power microwave technology, detection and attack integrated radar, and cognitive electronic warfare.

Description of drawings

Fig. 1 is the overall flow chart of the present invention;

Fig. 2 is the logical structural diagram of the light guide adaptive narrow-band microwave generator constructed in the first step of the present invention;

FIG. 3 is a schematic diagram of the overall structure of the high-energy pulsed cluster laser in FIG. 2 .

FIG. 4 is a schematic diagram of generating a preset waveform electrical signal. Wherein, Fig. 4 (a) is the envelope waveform of fiber amplifier 6 input pulse clusters, 4 (b) is the envelope waveform of fiber amplifier 6 output pulse clusters; Fig. 4 (c) is the normalized target output rectangular envelope waveform; Fig. 4(d) is a normalized preset waveform;

5 is a structural diagram of a wide bandgap semiconductor device;

Fig. 6 is a schematic diagram of connection of a wide bandgap semiconductor device, a three-plate pulse forming line and a radiation component.

Detailed ways

Fig. 1 is an overall flowchart of the present invention; As shown in Fig. 1, the present invention comprises the following steps:

The first step is to build a light-guided adaptive narrow-spectrum microwave generator. As shown in Figure 2, the light-guided adaptive narrow-spectrum microwave generator consists of two parts: a circuit modulation module and an optical path modulation module. The optical path modulation module is a microwave The high-energy pulse cluster laser of the signal source of the system photoconductive device, referred to as the high-energy pulse cluster laser, the circuit modulation module consists of three parts: a voltage source 200 , a wide bandgap semiconductor device 400 and a radiation output component 300 . The high-energy pulse cluster laser is connected to the wide bandgap semiconductor device 400 by optical fiber or optical waveguide.

High-energy pulse cluster lasers produce lasers with adjustable pulse cluster repetition frequency, pulse width, envelope waveform, and GHz high-frequency pulse repetition frequency, which are input into wide-bandgap semiconductor devices through optical fibers or optical waveguides.

As shown in Figure 3, the high-energy pulse cluster laser consists of a laser seed source 1, an optical fiber pre-amplifier 2, an optical modulation module 3, a high-frequency signal source 4, a synchronous control circuit 5, an optical fiber amplifier 6 and an editable waveform signal board 7. The laser seed source 1, the optical fiber pre-amplifier 2, the optical modulation module 3 and the optical fiber amplifier 6 are connected by optical fiber fusion. The high-frequency signal source 4, the synchronous control circuit 5, the first editable waveform signal board 71 and the laser seed source 1, the second editable waveform signal board 72 and the acousto-optic modulator 31 are connected by coaxial cables.

The optical modulation module 3 is composed of an acousto-optic modulator 31 and an electro-optic intensity modulator 32, and the acousto-optic modulator 31 and the electro-optic intensity modulator 32 are connected by means of optical fiber fusion splicing device pigtails. The output end of the laser seed source 1 and the input end of the optical fiber preamplifier 2, the output end of the optical fiber preamplifier 2 and the optical fiber input end of the optical modulation module 3 (that is, the optical fiber input end of the acousto-optic modulator 31), the optical modulation module 3 The output end (that is, the optical fiber output end of the electro-optical intensity modulator 32 ) is connected to the input end of the fiber amplifier 6 through fiber fusion, and the output end of the fiber amplifier 6 is fused with an end cap or an isolator. And the signal input end of the laser seed source 6 is connected with the signal output end of the first editable waveform signal board 71 through the coaxial signal line; One output end is connected through the coaxial signal line; The external trigger signal input end of the second editable waveform signal board 71 is connected with the second output end of the synchronous control circuit 5 through the coaxial signal line, and the second editable waveform signal board 72 The signal output terminal is connected to the signal input terminal of the AOM 31 through a coaxial signal line. The radio frequency signal input end of the electro-optical intensity modulator 32 is connected with the signal output end of the high frequency signal source 4 by a coaxial signal line.

The synchronization control circuit 5 provides synchronous timing signals for the first editable waveform signal board 71 and the second editable waveform signal board 72 . The first synchronous timing signal output from the first output terminal of the synchronization control circuit 5 is used to trigger the first editable waveform signal board 71 , and the second synchronous timing signal output from the second output terminal is used to trigger the second editable waveform signal board 72 . The two synchronous timing signals are required to be standard digital trigger signals with adjustable pulse width, adjustable repetition frequency, and an amplitude of 2.5V to 5V, and the time jitter between the first synchronous timing signal and the second synchronous timing signal pulse is less than 5ns.

The first editable waveform signal board 71 is an external trigger mode. When the first synchronous timing signal is received from the synchronous control circuit, the electrical pulse width is edited according to the requirements of the microwave system photoconductive device for the pulse width of the signal source, and the laser seed Source 1 sends a rectangular signal with adjustable repetition frequency and pulse width.

The laser seed source 1 adopts a semiconductor pulse laser seed source, and this semiconductor pulse laser seed source can generate pulse repetition frequency, pulse width, amplitude, and time domain waveform according to the rectangular signal output by the first editable waveform signal board 71. Adjustable laser seed pulse. It is required that the center wavelength range of the semiconductor pulsed laser seed source 1 is 1030nm-1065nm, the pulse width range is 10ns-200ns, and the repetition frequency range is 10Hz-200kHz.

The fiber pre-amplifier 2 increases the power of the laser seed pulse generated from the laser seed source, and improves the signal-to-noise ratio of the high-energy pulse cluster laser. The optical fiber pre-amplifier 2 is composed of M (M≥1) class optical fiber amplifiers. It is required that the average power and peak power of the laser pulse output by the fiber pre-amplifier 2 be less than or equal to the maximum withstand power of the electro-optical intensity modulator.

The second editable waveform signal board 72 is in an external trigger mode, and sends a preset waveform electrical signal to the acousto-optic modulator when receiving the second synchronous timing signal from the synchronous control circuit 5 .

The acousto-optic modulator 31 is a fiber-coupled acousto-optic modulator with a bandwidth greater than 100 MHz. On the one hand, the acousto-optic modulator 31 receives the preset waveform electrical signal from the second editable waveform signal board 72, modulates the optical pulse waveform output by the optical fiber pre-amplifier 2 into a preset time-domain waveform optical pulse, and converts the preset time-domain waveform The light pulses are sent to the electro-optic intensity modulator 32; on the other hand, the acousto-optic modulator 31 turns off the continuous spontaneous emission noise between the light pulses output by the optical fiber pre-amplifier 2.

The high-frequency signal source 4 is used to provide the electro-optical intensity modulator 32 with a GHz-level high-frequency sinusoidal signal with a flexible and adjustable frequency. The high-frequency signal source 4 can be any one of a voltage-controlled frequency-variable oscillator, a frequency synthesizer, an arbitrary waveform generator, and a function generator, or can be a voltage-controlled frequency-variable oscillator, a frequency synthesizer, an arbitrary waveform generator, Combination of any function generator with a power amplifier. It is required that the output voltage of the high-frequency signal source 4 be greater than the half-wave voltage of the electro-optical intensity modulator 32 .

The operating bandwidth of the electro-optical intensity modulator 32 is greater than or equal to 10 GHz. The electro-optical intensity modulator 32 modulates the preset time-domain waveform light pulse received from the acousto-optic modulator 31 into a preset envelope waveform pulse cluster laser according to the high-frequency sinusoidal signal output by the high-frequency signal source, so that the preset envelope waveform The repetition frequency and waveform of the high-frequency pulses in the pulse cluster laser are the same as the high-frequency sinusoidal signal received from the high-frequency signal source 1, and the modulated pulse cluster laser is sent to the fiber amplifier 6.

The optical fiber amplifier 6 amplifies the preset envelope waveform pulse cluster laser received from the electro-optical intensity modulator, and outputs a rectangular envelope pulse cluster. The optical fiber amplifier 6 is composed of N (N≥2) level optical fiber amplifiers. The output end of the optical fiber amplifier 6 is fused with a fiber end cap or an isolator to prevent damage to the high-energy pulse cluster laser caused by the return light from the end face.

As shown in FIG. 2 , the voltage source 200 is a solid-state pulse forming line, which is connected to the electrode of the wide bandgap semiconductor device 400 with conductive silver paste, and generates a pulse voltage to act on the wide bandgap semiconductor device 400 .

The wide bandgap semiconductor device 400 is connected to a high-energy pulse cluster laser through an optical fiber or an optical waveguide, connected to a voltage source through a conductive silver paste, and connected to a radiation output component through a coaxial line. Under the simultaneous action of laser and voltage, high-frequency electrical signals are generated , and output the high-frequency electrical signal to the radiation output component 300 .

As shown in Figure 5, wide bandgap semiconductor device 400 is made up of four parts of semiconductor wafer 8 (ie base), 2 electrodes, filling material 100 and support structure 101, and the combination of semiconductor wafer 8 and 2 electrodes connections uses high-resistance semiconductor As a substrate material, a transparent conductive layer is prepared on the high-resistance semiconductor (front side), and a high-voltage passivation layer with anti-reflection effect is prepared on the transparent conductive layer, and then a metal ring is prepared to connect the transparent conductive layer (that is, high-voltage passivation There is a metal ring close to the transparent conductive layer around the layer), and then it is connected with the hollow metal electrode 91 (that is, the top of the metal ring is close to the hollow metal electrode 91); the back side of the substrate is first prepared with a silver-plated layer with high reflectivity, and then Connect to solid metal electrode 92 . The hollow metal electrode 91 and the solid metal electrode 92 are two electrodes in the present invention, and the rest (i.e. substrate material, transparent conductive layer, high-voltage resistant passivation layer, metal ring, silver-plated layer) are used in the present invention semiconductor wafer 8. The semiconductor wafer 8 can be a square slice or a circular slice, with a thickness of 0.01 mm to 10 mm, a side length of 1 mm to 50 mm for a square slice, and a diameter of 1 mm to 50 mm for a circular slice. The substrate material of the semiconductor wafer 8 is a wide bandgap SiC material, such as 4H-SiC or 6H-SiC, the withstand voltage requirement is 3-4MV/cm, and the recombination time of SiC crystal carriers is less than 1ns. Hollow metal electrode 91 and solid metal electrode 92 materials can be stainless steel or brass; The ratio of the diameter of hollow metal electrode 91 and solid metal electrode 92 and the side length or diameter of semiconductor wafer remains between 1～1.5; Hollow metal electrode 91 The connection with the solid metal electrode 92 and the semiconductor wafer is bonded with conductive silver glue, and the silver glue is cured after baking. The support structure 101 is a rectangular box without a cover processed by polytetrafluoroethylene material, the hollow metal electrode 91 passes through the first side 1011 of the support structure 101, one end is bonded to the first surface 81 of the semiconductor wafer 8, and the other end is connected to the voltage The source is connected; one end of the solid metal electrode 92 is bonded to the second surface 82 of the semiconductor wafer 8 (a surface opposite to the first surface 81), and the other end passes through the second side 1012 of the support structure 101 to be connected to the voltage source; There is a filling material 100 between the semiconductor wafer 8, the hollow metal electrode 91, the solid metal electrode 92, and the support structure 101. The filling material 100 is required to completely cover the semiconductor wafer 8, the hollow metal electrode 91, and the solid metal electrode 92. The filling material 100 requires an average durability. The receiving field strength is ≥40kV/mm, when the light wavelength is 200nm-1200nm, the light transmittance is greater than 99%, and the filling material is preferably epoxy resin.

As shown in Figure 6, the voltage source 200 is a solid state pulse forming line. The withstand voltage range of the solid-state pulse forming line is the same as that of the wide bandgap semiconductor device 400 , and the impedance of the solid state pulse forming line is the same as the on-state minimum resistance of the wide bandgap semiconductor device 400 under laser irradiation. The solid-state pulse forming line has a three-plate structure, which is stacked together according to the structure of metal plate-medium-metal plate-medium-metal plate. The medium is a dielectric material with high energy storage density (>1J/cm ³ ), and the metal plate is made of silver. The connection mode between the voltage source 200 and the wide bandgap semiconductor device 400 is: the hollow metal electrode 91 and the solid metal electrode 92 of the wide bandgap semiconductor device 400 are respectively connected to the middle metal plate 202 and the upper metal plate 201 of the voltage source 200, or the two electrodes are connected to the voltage source 200 middle metal plate 202 and lower metal plate 203. (shown in Fig. 6 is that two electrodes are connected to voltage source 200 middle metal plate 202 and lower floor metal plate 203)

The radiation output component is a flat-panel broadband radiation horn 300 matching the impedance of the voltage source 200, connected to the wide-bandgap semiconductor device 400 through an SMA (SubMiniature version A) coaxial line, and radiating the high-frequency electrical signal output by the wide-bandgap semiconductor device 400 , producing a microwave signal output.

In the second step, the high-energy pulse cluster laser generates high-energy pulse cluster laser, and outputs high-energy pulse cluster laser to the wide bandgap semiconductor device, the method is:

2.1, the synchronous control circuit 5 outputs 2 digital signals with adjustable repetition frequency;

2.2, the first editable waveform signal board 71 is triggered by the first synchronous signal output by the synchronous control circuit 5, and the electric pulse of the first editable waveform signal board 71 is edited according to the parameter requirements of the wide bandgap semiconductor device 400 on the pulse width of the signal source Width, send a rectangular signal with adjustable pulse width to the laser seed source 1;

2.3. The laser seed source 1 receives the rectangular signal with adjustable pulse width output by the first editable waveform signal board 71, and generates a rectangular optical pulse with adjustable pulse width. The repetition frequency and pulse width of this optical pulse can be adjusted;

2.4, the optical fiber pre-amplifier 2 amplifies the energy of the rectangular optical pulse output by the laser seed source 1 to the maximum tolerable power of the electro-optical intensity modulator 32, so as to improve the signal-to-noise ratio, and the output laser pulse waveform is characterized by the waveform due to the gain saturation effect Distortion occurred;

2.5. The second editable waveform signal board 72 is triggered by the second synchronization signal output by the synchronization control circuit, and outputs a rectangular electrical signal with the same pulse width as the first editable waveform signal board 71 .

2.6, the acousto-optic modulator 31 receives from the second editable waveform signal board 72 a rectangular electrical signal with the same pulse width as the first editable waveform signal board 71, that is, the laser pulse waveform output by the optical fiber preamplifier 2 is not changed, and the The laser pulse that changes the time-domain waveform is sent to the electro-optic intensity modulator 32;

2.7, the high-frequency signal source 4 outputs a high-frequency sinusoidal signal with flexible and adjustable frequency in the order of GHz;

2.8, the electro-optical intensity modulator 32 modulates the laser pulse received from the acousto-optic modulator 31 without changing the time-domain waveform into a pulse cluster laser with the same envelope waveform according to the high-frequency sinusoidal signal received from the high-frequency signal source 4, so that the pulse The repetition frequency and waveform of the high-frequency pulse in the cluster are the same as the high-frequency sinusoidal signal received from the high-frequency signal source 4, and the pulse cluster laser is sent to the fiber amplifier 6;

2.9, test the input pulse cluster laser envelope waveform, output pulse cluster laser envelope waveform and pulse cluster laser energy of the fiber amplifier 6, and calculate the time-dependent pulse cluster energy, input pulse cluster envelope waveform, and output pulse cluster envelope waveform The input pulse cluster instantaneous power P _in (t and time-containing output pulse cluster instantaneous power P _out (t), import the Matlab program to extract the envelope waveform, as the initial input and output waveform, calculate the time-related gain curve, by the formula (1) Curve fitting obtains the initial gain G ₀ and the saturated energy flow E _sat parameter of the amplifier. Then set the rectangular envelope waveform as the target output envelope waveform, and run the Matlab program (includes a random parallel gradient descent algorithm) to obtain the preset waveform electrical signal;

As shown in Figure 4, the preset waveform electrical signal is obtained by the following method:

2.9.1, set the output signal of the second editable waveform signal board 72 as a rectangle, that is, the output signal of the second editable waveform signal board 72 makes the acousto-optic modulator 31 not change the laser pulse waveform output by the optical fiber preamplifier 2 . Under this condition, test the input pulse cluster envelope waveform, the output pulse cluster envelope waveform and the pulse cluster energy of the optical fiber amplifier 6 with a high-speed oscilloscope, a photoelectric detector and a power meter, by the pulse cluster energy and the input pulse cluster envelope waveform, output The time-dependent input pulse cluster instantaneous power P _in (t) and the time-dependent output pulse cluster instantaneous power P _out (t) are obtained by calculating the pulse cluster envelope waveform.

2.9.2, import the obtained time-dependent input pulse cluster instantaneous power P _in (t) and time-dependent output pulse cluster instantaneous power P _out (t) into the Matlab program (including stochastic parallel gradient descent optimization algorithm), and extract the envelope waveform ,, as the initial input and output waveforms when the precompensation waveform is calculated by the stochastic parallel gradient descent algorithm, as shown in Figure 4 (a) fiber amplifier 6 input pulse cluster envelope waveform, the ordinate is the instantaneous power, the unit is watts, and the abscissa is time , the unit is nanoseconds, Fig. 4 (b) is the envelope waveform of the pulse cluster output by the optical fiber amplifier 6, the ordinate is the instantaneous power, because the power is amplified by the optical fiber amplifier 6, the unit is kilowatts, the abscissa is the time, the unit is nanoseconds .

2.9.3, calculate the time-related gain function G(t) through the formula G(t)=P _out (t)/P _in (t), according to the gain formula (1) in the amplifier FN model,

G(t)＝1+(G ₀ -1)exp[-E _out (t)/E _sat ] (1)

Curve fitting obtains initial gain G ₀ and the saturated energy flow E _sat parameter of amplifier;

2.9.4, set the rectangular envelope waveform as the target output envelope waveform of the Matlab program, and normalize the target output rectangular envelope waveform as shown in Figure 4(c). In Figure 4(c), the ordinate is normalized Value, the abscissa is time, the unit is nanosecond;

2.9.5, run the MATLAB program to get the preset waveform, and the normalized preset waveform is shown in Figure 4(d). In Figure 4(d), the ordinate is the normalized value, the abscissa is time, and the unit is nano second.

2.10. Edit the output pulse waveform of the second editable waveform signal board 72 according to the preset waveform electrical signal, so that the second editable waveform signal board 72 outputs the preset waveform electrical signal to the acousto-optic modulator 31 .

2.11, the acousto-optic modulator 31 receives the preset waveform electrical signal from the second editable waveform signal board 27, and modulates the optical pulse waveform output by the optical fiber pre-amplifier 2 into a preset time-domain waveform optical pulse, which is characterized in that the waveform has passed through the above The preset waveform calculated in the step can make the pulse cluster envelope waveform output by the optical fiber amplifier 6 rectangular, and send the preset time-domain waveform optical pulses to the electro-optic intensity modulator 32 .

2.12. The electro-optical intensity modulator 32 modulates the preset time-domain waveform light pulse received from the acousto-optic modulator 31 into a preset envelope waveform pulse cluster laser according to the high-frequency sinusoidal signal received from the high-frequency signal source 4, which is characterized by Pulse cluster form, and the pulse cluster envelope is a preset waveform, so that the repetition frequency and waveform of the high-frequency pulse in the preset envelope waveform pulse cluster laser are the same as the high-frequency sinusoidal signal received from the high-frequency signal source 4, and the modulation The last pulse cluster laser is sent to the fiber amplifier 6;

2.13, the optical fiber amplifier 6 amplifies the preset envelope waveform pulse cluster laser received from the electro-optic intensity modulator 32, and outputs the high-energy pulse cluster laser to the wide bandgap semiconductor device. The pulse cluster laser repetition frequency, pulse width, envelope waveform, GHz high frequency and pulse repetition frequency can be tuned.

In the third step, the voltage source 200 (that is, the pulse forming line) generates a pulse voltage, and the high-energy pulse cluster laser and the pulse voltage act on the wide bandgap semiconductor device 400 at the same time. That is, the voltage source applies voltage only when the high-energy pulse cluster laser starts to irradiate the semiconductor, and when the light irradiation ends, the voltage loading ends accordingly.

The high-energy pulse cluster laser uses optical waveguide or optical fiber to irradiate the wide bandgap semiconductor device 400 from the hollow metal electrode 91 to change the resistance of the wide bandgap semiconductor device 400. The resistance of the wide bandgap semiconductor device 400 is proportional to the light intensity of the high energy pulse cluster laser Linear change, light intensity increases, resistance decreases.

At the same time, the wide bandgap semiconductor device 400 modulates the pulse voltage into a high-frequency electrical signal with the same modulation frequency as the high-energy pulse cluster laser, and sends the modulated high-frequency electrical signal to the radiation output component.

The fourth step, the radiation output component radiates the high-frequency electrical signal: the radiation output component receives the high-frequency electrical signal from the wide bandgap semiconductor, radiates the high-frequency electrical signal, and generates a microwave signal output.

Claims (16)

1. A photoconductive adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser, is characterized in that comprising the following steps: The first step is to build a light-guided adaptive narrow-spectrum microwave generator. The light-guided adaptive narrow-spectrum microwave generator is composed of a circuit modulation module and an optical path modulation module. The optical path modulation module is a high-energy pulse cluster laser, and the circuit modulation module is composed of a voltage source (200), a wide bandgap semiconductor device (400) and a radiation output assembly (300) are composed of three parts, and the high-energy pulse cluster laser and the wide bandgap semiconductor device (400) are connected by an optical fiber or an optical waveguide; The high-energy pulse cluster laser produces laser with adjustable pulse cluster repetition frequency, pulse width, envelope waveform, and GHz high-frequency pulse repetition frequency, which is input into the wide bandgap semiconductor device (400) through optical fiber or optical waveguide; The high-energy pulse cluster laser consists of a laser seed source (1), an optical fiber pre-amplifier (2), an optical modulation module (3), a high-frequency signal source (4), a synchronous control circuit (5), an optical fiber amplifier (6), and two The editing waveform signal board (7) is composed of the first editable waveform signal board (71) and the second editable waveform signal board (72); the optical modulation module (3) consists of an acousto-optic modulator (31) and an electro-optic intensity modulator (32) form, and acousto-optic modulator (31) and electro-optic intensity modulator (32) are connected with the mode of optical fiber welding device pigtail; The output end of laser seed source (1) and the input end of optical fiber pre-amplifier (2), The output end of the optical fiber preamplifier (2) and the optical fiber input end of the optical modulation module (3) are the optical fiber input end of the acousto-optic modulator (31), and the output end of the optical modulation module (3) is the electro-optical intensity modulator (32) The optical fiber output end of the optical fiber amplifier (6) and the input end of the optical fiber amplifier (6) are all connected through the mode of optical fiber fusion; The external trigger signal input terminal of the first editable waveform signal board (71) is connected with the first output terminal of the synchronous control circuit (5) through the coaxial signal line; the external trigger signal of the second editable waveform signal board (72) The trigger signal input end is connected to the second output end of the synchronous control circuit (5) through a coaxial signal line, and the signal output end of the second editable waveform signal board (72) is connected to the signal input end of the acousto-optic modulator (31) through The coaxial signal line is connected, and the radio frequency signal input end of the electro-optic intensity modulator (32) is connected with the signal output end of the high frequency signal source (4) with the coaxial signal line; The synchronous control circuit (5) provides synchronous timing signals for the first editable waveform signal board (71) and the second editable waveform signal board (72); the first synchronous timing signal output from the first output terminal is used to trigger the first editable waveform signal board (72). Editing the waveform signal board (71), the second synchronous timing signal output by the second output terminal is used to trigger the second editable waveform signal board (72); The first editable waveform signal board (71) is an external trigger working mode. When receiving the first synchronous timing signal from the synchronous control circuit (5), edit the electrical pulse width according to the requirements of the microwave system photoconductive device for the pulse width of the signal source, sending a rectangular signal with adjustable repetition frequency and pulse width to the laser seed source (1); The laser seed source (1) adopts a semiconductor pulse laser seed source, and generates laser seed pulses with flexible and adjustable pulse repetition frequency, pulse width, amplitude and time domain waveform according to the rectangular signal output by the first editable waveform signal board (71) ; The optical fiber pre-amplifier (2) increases the power of the laser seed pulse generated from the laser seed source (1), and improves the signal-to-noise ratio of the high-energy pulse cluster laser as the signal source of the microwave system photoconductive device; the optical fiber pre-amplifier (2) is composed of M Class optical fiber amplifier, M≥1; The second editable waveform signal board (72) is an external trigger working mode, and sends a preset waveform electrical signal to the acousto-optic modulator (31) when receiving the second synchronous timing signal from the synchronous control circuit (5); The acousto-optic modulator (31) is a fiber-coupled acousto-optic modulator. On the one hand, the acousto-optic modulator (31) receives a preset waveform electrical signal from the second editable waveform signal board (72), and outputs the optical fiber pre-amplifier (2) The optical pulse waveform modulation of the preset time-domain waveform light pulse, and the preset time-domain waveform light pulse is sent to the electro-optic intensity modulator (32); on the other hand, the acousto-optic modulator (31) turns off the optical fiber pre-amplifier (2 ) continuous spontaneous emission noise between the output light pulses; The high-frequency signal source (4) is used to provide the electro-optic intensity modulator (32) with a GHz level high-frequency sinusoidal signal with adjustable frequency, and the output voltage of the high-frequency signal source (4) is required to be greater than that of the electro-optical intensity modulator (32). half-wave voltage; The electro-optic intensity modulator (32) modulates the preset time-domain waveform light pulse received from the acousto-optic modulator (31) into a preset envelope waveform pulse cluster laser according to the high-frequency sinusoidal signal output by the high-frequency signal source (4) , so that the repetition frequency and waveform of the high-frequency pulse in the preset envelope waveform pulse cluster laser are the same as the high-frequency sinusoidal signal received from the high-frequency signal source (4), and the modulated pulse cluster laser is sent to the fiber amplifier (6 ); The optical fiber amplifier (6) amplifies the preset envelope waveform pulse cluster laser received from the electro-optical intensity modulator (32), and outputs a rectangular envelope pulse cluster. The optical fiber amplifier (6) is composed of N-level optical fiber amplifiers, N≥2; The output end of the optical fiber amplifier (6) is fused with an optical fiber end cap or an isolator; The wide bandgap semiconductor device (400) is connected to a high-energy pulse cluster laser through an optical fiber or an optical waveguide, connected to a voltage source (200) through a conductive silver paste, and connected to a radiation output component through a coaxial line. Under the simultaneous action of laser and voltage, Generate a high-frequency electrical signal, and output the high-frequency electrical signal to the radiation output component; the wide bandgap semiconductor device (400) consists of a semiconductor wafer (8), a hollow metal electrode (91), a solid metal electrode (92), a filling material (100 ) and a support structure (101); The voltage source (200) is a solid-state pulse forming line, which is connected with the electrode of the wide bandgap semiconductor device (400) with a conductive silver paste to generate a pulse voltage to act on the wide bandgap semiconductor device (400); The radiation output component (300) is a flat-panel broadband radiation horn matching the impedance of the voltage source (200), and is connected to the wide-bandgap semiconductor device (400) through an SMA coaxial line; In the second step, the high-energy pulse cluster laser generates high-energy pulse cluster laser, and outputs the high-energy pulse cluster laser to the wide bandgap semiconductor device (400), the method is: 2.1, the synchronous control circuit (5) outputs 2 digital signals with adjustable repetition frequency; 2.2, the first editable waveform signal board (71) is triggered by the first synchronous signal output by the synchronous control circuit (5), and the first editable waveform is edited according to the parameter requirements of the wide bandgap semiconductor device (400) for the pulse width of the signal source The electrical pulse width of the signal board (71) sends a rectangular signal with adjustable pulse width to the laser seed source (1); 2.3, the laser seed source (1) receives the rectangular signal with adjustable pulse width output by the first editable waveform signal board (71), and generates a rectangular light pulse with adjustable pulse width; 2.4, the optical fiber pre-amplifier (2) amplifies the energy of the rectangular light pulse output by the laser seed source (1) to the maximum tolerable power of the electro-optic intensity modulator (32), so as to improve the signal-to-noise ratio; 2.5, the second editable waveform signal board (72) is triggered by the second synchronization signal output by the synchronous control circuit, and outputs a rectangular electrical signal with the same pulse width as the first editable waveform signal board (71); 2.6, the acousto-optic modulator (31) receives a rectangular electrical signal with the same pulse width as the first editable waveform signal board (71) from the second editable waveform signal board (72), that is, does not change the output of the optical fiber preamplifier (2) The laser pulse waveform, and the laser pulse that does not change the time domain waveform is sent to the electro-optical intensity modulator (32); 2.7, the high-frequency signal source (4) outputs a high-frequency sinusoidal signal with a flexible and adjustable frequency of GHz order; 2.8. The electro-optic intensity modulator (32) modulates the laser pulse received from the acousto-optic modulator (31) into the same envelope waveform according to the high-frequency sinusoidal signal received from the high-frequency signal source (4). Pulse cluster laser, so that the repetition frequency and waveform of the high-frequency pulses in the pulse cluster are the same as the high-frequency sinusoidal signal received from the high-frequency signal source (4), and the pulse cluster laser is sent to the fiber amplifier (6); 2.9, the input pulse cluster laser envelope waveform, the output pulse cluster laser envelope waveform and the pulse cluster laser energy E _out (t) of the test fiber amplifier (6), by the pulse cluster energy and the input pulse cluster envelope waveform, the output pulse cluster The envelope waveform is calculated to obtain the instantaneous power P _in (t) of the time-dependent input pulse cluster and the instantaneous power P _out (t) of the time-dependent output pulse cluster. Waveform, as the initial input and output waveform, calculates the gain curve related to time, obtains the initial gain G ₀ and the saturated energy flow E _sat parameter of the amplifier through curve fitting, then sets the rectangular envelope waveform as the target output envelope waveform, Run the Matlab program to obtain the preset waveform electrical signal; 2.10, according to the preset waveform electrical signal, edit the output pulse waveform of the second editable waveform signal board (72), so that the second editable waveform signal board (72) outputs the preset waveform electrical signal to the acousto-optic modulator (31) ; 2.11, the acousto-optic modulator (31) receives the preset waveform electrical signal from the second editable waveform signal board 27, modulates the optical pulse waveform output by the optical fiber pre-amplifier (2) into a preset time-domain waveform optical pulse, and converts the pre-set Set the time-domain waveform light pulse to be sent to the electro-optical intensity modulator (32); 2.12, the electro-optic intensity modulator (32) modulates the preset time-domain waveform light pulse received from the acousto-optic modulator (31) into a preset envelope waveform pulse according to the high-frequency sinusoidal signal received from the high-frequency signal source (4) Cluster laser, preset envelope waveform Pulse cluster laser is in the form of pulse cluster, and the pulse cluster envelope is a preset waveform, so that the repetition frequency and waveform of high-frequency pulses in the preset envelope waveform pulse cluster laser are the same as those from a high-frequency signal source (4) The high-frequency sinusoidal signals received are the same, and the modulated pulse cluster laser is sent to the fiber amplifier (6); 2.13, the optical fiber amplifier (6) amplifies the preset envelope waveform pulse cluster laser received from the electro-optical intensity modulator (32), and outputs the high-energy pulse cluster laser to the wide bandgap semiconductor device (400), the pulse cluster laser repetition frequency, Pulse width, envelope waveform, GHz high frequency, pulse repetition frequency can be tuned; In the third step, the voltage source (200) generates a pulse voltage, and the high-energy pulse cluster laser and the pulse voltage act on the wide bandgap semiconductor device (400) at the same time; the high-energy pulse cluster laser uses an optical waveguide or an optical fiber to irradiate from a hollow metal electrode (91) On the wide bandgap semiconductor device (400), change the resistance of the wide bandgap semiconductor device (400), the resistance of the wide bandgap semiconductor device (400) changes linearly with the light intensity of the high-energy pulse cluster laser, the light intensity becomes larger, and the resistance decreases At the same time, the wide bandgap semiconductor device (400) modulates the pulse voltage into a high-frequency electrical signal with the same modulation frequency as the high-energy pulse cluster laser, and sends the modulated high-frequency electrical signal to the radiation output component (300); In the fourth step, the radiation output component (300) radiates high-frequency electrical signals: the radiation output component (300) receives high-frequency electrical signals from the wide bandgap semiconductor device (400), radiates the high-frequency electrical signals, and generates microwave signal output. 2. A kind of light guide adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser as claimed in claim 1, it is characterized in that the first synchronous timing signal and the second synchronous timing signal output by the synchronous control circuit (5) It is a standard digital trigger signal with adjustable pulse width and repeat frequency and an amplitude of 2.5V to 5V, and the time jitter between the pulses of the first synchronous timing signal and the second synchronous timing signal is less than 5ns. 3. A kind of light guide adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser as claimed in claim 1, it is characterized in that the central wavelength range of the laser seed source (1) is 1030nm～1065nm, and the pulse width range is 10ns～200ns, repetition frequency range is 10Hz～200kHz. 4. A kind of light guide adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser as claimed in claim 1, it is characterized in that the average power and the peak power of the output laser pulse of the said optical fiber pre-amplifier (2) are less than or equal to the electro-optic intensity The maximum withstand power of the modulator (32). 5. a kind of light guide adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser as claimed in claim 1, it is characterized in that described acousto-optic modulator (31) bandwidth is greater than 100MHz, and described electro-optical intensity modulator (32 ) with an operating bandwidth greater than or equal to 10GHz. 6. A kind of light guide adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser as claimed in claim 1, is characterized in that described high-frequency signal source (4) is voltage-controlled frequency-variable oscillator, frequency synthesizer, Any one of arbitrary waveform generator and function generator, or a combination of any one of voltage-controlled frequency-variable oscillator, frequency synthesizer, arbitrary waveform generator, and function generator with a power amplifier. 7. a kind of photoconductive self-adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser as claimed in claim 1, is characterized in that the semiconductor wafer (8) of described wide-bandgap semiconductor device (400) is connected with 2 electrodes, The semiconductor wafer (8) is made of substrate material, transparent conductive layer, high-voltage resistant passivation layer, metal ring, and silver-plated layer; A high-voltage passivation layer is prepared on the high-voltage passivation layer, and there is a metal ring close to the transparent conductive layer around the high-voltage passivation layer, and the top of the metal ring is close to the hollow metal electrode (91); a silver-plated layer is prepared on the back of the high-resistance semiconductor, It is connected with the solid metal electrode (92); the support structure (101) is a rectangular box without a cover processed by polytetrafluoroethylene material, and the hollow metal electrode (91) passes through the first side 1011 of the support structure (101), and one end is connected with the The first face 81 of semiconductor chip (8) is bonded, and the other end is connected with voltage source (200); One end of solid metal electrode (92) is bonded with the second face 82 of semiconductor chip (8), and the other end passes through support The second side 1012 of the structure (101) is connected to the voltage source (200); there is a filling material (100) between the semiconductor wafer (8), the hollow metal electrode (91), the solid metal electrode (92) and the support structure (101) ), the filling material (100) is required to completely cover the semiconductor wafer (8), the hollow metal electrode (91), and the solid metal electrode (92). 8. A kind of photoconductive adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser as claimed in claim 7, it is characterized in that the semiconductor wafer (8) of described wide-bandgap semiconductor device (400) is a square sheet or circular The flakes have a thickness of 0.01 mm to 10 mm, a side length of 1 mm to 50 mm when they are square flakes, and a diameter of 1 mm to 50 mm when they are circular flakes. 9. A kind of photoconductive adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser as claimed in claim 7, it is characterized in that the high-resistance semiconductor of described wide-bandgap semiconductor device (400) selects wide-bandgap SiC material, withstand voltage The requirement is 3-4MV/cm, and the recombination time of SiC crystal carriers is less than 1ns. 10. A method for generating light-guided adaptive narrow-band microwaves based on high-energy pulsed cluster lasers as claimed in claim 9, wherein the SiC material refers to 4H-SiC or 6H-SiC material. 11. a kind of photoconductive self-adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser as claimed in claim 7 is characterized in that the hollow metal electrode (91) and the solid metal electrode ( 92) The material is stainless steel or brass; the ratio of the diameter of the hollow metal electrode (91) and the solid metal electrode (92) to the side length or diameter of the semiconductor wafer (8) remains between 1 and 1.5; the hollow metal electrode (91) ) and the solid metal electrode (92) are bonded with the semiconductor wafer (8) using conductive silver glue. 12. A kind of photoconductive adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser as claimed in claim 7, it is characterized in that the filling material (100) of the wide bandgap semiconductor device (400) requires an average withstand field strength ≥40kV/mm, when the light wavelength is 200nm~1200nm, the light transmittance is greater than 99%. 13. A method for generating light-guided adaptive narrow-band microwaves based on high-energy pulse cluster lasers as claimed in claim 12, characterized in that the filling material is epoxy resin. 14. A method for generating light-guided adaptive narrow-spectrum microwaves based on high-energy pulse cluster lasers as claimed in claim 1, characterized in that the withstand voltage range of the solid-state pulse forming line is the same as the withstand voltage range of the wide bandgap semiconductor device (400) The range is the same, and the solid-state pulse forming line impedance is the same as the on-state minimum resistance of the wide bandgap semiconductor device (400) under laser irradiation. 15. A method for generating light-guided adaptive narrow-spectrum microwaves based on high-energy pulse cluster lasers as claimed in claim 1, characterized in that the solid-state pulse forming line is a three-plate structure, according to the metal plate-medium-metal plate-medium -The structure of the metal plates is stacked together; the medium is a dielectric material with an energy storage density>1J/cm ³ , and the material of the metal plate is silver; the connection mode of the voltage source (200) and the wide bandgap semiconductor device (400) is: broadband The hollow metal electrode (91) and the solid metal electrode (92) of the gap semiconductor device (400) are respectively connected to the middle metal plate 202 and the upper metal plate 201 of the voltage source (200), or the hollow metal electrode (91) and the solid metal electrode ( 92) Connect the middle metal plate 202 and the lower metal plate 203 of the voltage source (200). 16. A kind of light guide adaptive narrow-spectrum microwave generation method based on high-energy pulse cluster laser as claimed in claim 1, it is characterized in that the preset waveform electric signal of the second editable waveform signal board (72) in step 2.9 adopts The following method is obtained: 2.9.1, the output signal of the second editable waveform signal board (72) is set to a rectangle, and under this condition, the input pulse cluster envelope waveform of the optical fiber amplifier (6) is tested with a high-speed oscilloscope, a photodetector and a power meter. The output pulse cluster envelope waveform and pulse cluster energy are calculated from the pulse cluster energy, input pulse cluster envelope waveform, and output pulse cluster envelope waveform to obtain the time-dependent input pulse cluster instantaneous power P _in (t) and time-dependent output pulse cluster instantaneous power Power P _out (t); 2.9.2, import P _in (t) and P _out (t) into the Matlab program containing the stochastic parallel gradient descent optimization algorithm, extract the envelope waveform, and use it as the initial input and output waveform; 2.9.3. Calculate the time-related gain function G(t) through the formula G(t)=P _out (t)/P _in (t). According to the gain formula (1) in the amplifier FN model, G(t)＝1+(G ₀ -1)exp[-E _out (t)/E _sat ] (1) Curve fitting obtains initial gain G ₀ and the saturated energy flow E _sat parameter of amplifier; 2.9.4, set the rectangular envelope waveform as the target output envelope waveform of the Matlab program; 2.9.5, run the MATLAB program to get the preset waveform electrical signal.