CN112054374A - High-power microwave source combining narrow-band and ultra-wide-band with tunable frequency - Google Patents
High-power microwave source combining narrow-band and ultra-wide-band with tunable frequency Download PDFInfo
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Abstract
The invention discloses a frequency-tunable narrow-band and ultra-wideband combined high-power microwave source, and aims to provide a tunable narrow-band and ultra-wideband combined high-power microwave source. The invention is composed of a pulse driving source, a photoconductive semiconductor switch, an output load, a pulse laser source group and a laser source group controller; the laser source group controller consists of a voltage divider, a voltage conversion chip, a main control chip and 4 serial ports; the voltage divider converts a high-voltage signal received from the pulse driving source into a low-voltage signal; the voltage conversion chip performs analog-to-digital conversion on the low-voltage signal; the master control chip controls the conduction of the serial port according to the size of the digital low-voltage signal, and further controls 3 laser diodes and the frequency modulation optical fiber pulse laser in the pulse laser light source group to work, so that the photoconductive semiconductor switch works in a nonlinear mode or a linear mode to generate ultra-wideband microwaves or narrowband microwaves. The invention has tunable frequency, and can output both ultra-wideband microwave and narrowband microwave.
Description
Technical Field
The invention relates to a microwave source device in the technical field of high-power microwaves, in particular to a high-power microwave source based on a photoconductive switch, which realizes the combination of a tunable frequency narrow band and an ultra wide band.
Background
The high-power microwave generally refers to electromagnetic waves with peak power of more than 100MW and frequency of 1-300 GHz, and is widely applied to a plurality of national defense and industrial fields such as electronic high-energy radio frequency accelerators, remote sensing, radiation measurement and the like at present.
The high-power microwave source is a core component for generating high-power microwave radiation and is divided into a narrow-band microwave source and an ultra-wide-band microwave source according to bandwidth. The narrowband microwave source has stronger directionality, the acting distance is farther than that of the ultra-wideband microwave source under the same power and wave band level, but the frequency point is single or the frequency modulation range is limited, so the acting range is not wide than that of the ultra-wideband microwave source; the ultra-wideband microwave source has a relatively limited operating distance, but a wide frequency spectrum width and a wide operating range. The research on the high-power microwave source combining the broadband and the narrow band with tunable frequency has important academic value and practical significance in the fields of high-power microwave effect mechanism research, strong electromagnetic compatibility, protection technology research and the like, but at present, a high-power microwave source which gives consideration to the working states and advantages of the narrow band and the ultra-wideband is not available at home and abroad, and if the high-power microwave source combining the broadband and the narrow band with tunable frequency can be provided, the research on the effect mechanism and the protection of a target at a long distance can be carried out, and the research on the effect, the electromagnetic compatibility and the protection of a plurality of complex targets at a short distance can be carried out.
The principle of the existing ultra-wideband high-power microwave source based on photoconductive switch [ Hulong, high repetition frequency hyperspectral pulse source technology research based on gallium arsenide avalanche photoconductive switch, 2016] is shown in FIG. 1: the broadband high-power microwave source based on the photoconductive switch consists of a pulse driving source 1, a photoconductive semiconductor switch 2, a modulated laser source 6 and an output load 4. The pulse driving source 1 can be a capacitance storage type pulse generator, an inductance storage type pulse generator, a pulse forming linear pulse generator, a Blumlein structure pulse generator and the like, and after the pulse driving source 1 is charged, a trigger signal is input to the modulation laser source 6; the modulated laser source 6 emits laser light to the photoconductive semiconductor switch 2; the photoconductive semiconductor switch 2 is a photoconductive switch, the photoconductive semiconductor switch 2 absorbs photons incident from the modulated laser light source 6, electrons in a valence band or a deep energy level are excited to a conduction band of the photoconductive semiconductor switch 2, free electrons or electron-hole pairs are generated to form free carriers, the resistivity of the photoconductive semiconductor switch 2 rapidly decreases, and the photoconductive semiconductor switch 2 is in a conducting state. The voltage of the pulse driving source 1 is loaded on the conducted photoconductive semiconductor switch 2 to generate ultra-wideband pulses, and the ultra-wideband pulses are output by an output load 4, so that ultra-wideband microwave output is obtained. In the technical scheme, when the charging voltage of the pulse driving source 1 is 5.0 kV, the peak voltage of the output ultra-wideband pulse is 9.6 kV, the pulse width is 5.6 ns, and the ultra-wideband high-power microwave source based on the photoconductive switch shown in FIG. 1 can work at 20 kHz.
The generation of microwaves based on the photoconductive semiconductor switch 2 is not limited to the above-described operation mechanism, and the photoconductive semiconductor switch 2 has two operation modes: a non-linear mode and a linear mode, both of which can be used to generate microwaves. (1) In the non-linear mode, the photoconductive semiconductor switch 2 remains on after being triggered by the modulated laser source 6, corresponding to a switch. The voltage generated by the pulse driving source 1 is loaded on the conducted photoconductive semiconductor switch 2, and when the voltage is higher than a certain value, the current in the photoconductive semiconductor switch 2 starts to oscillate at a high frequency, so that the current is transmitted to an output load 4 to generate ultra-wideband microwaves; (2) in the linear mode, the on-resistance of the photoconductive semiconductor switch 2 is inversely proportional to the illumination intensity of the laser, and is equivalent to a light-operated resistance, at this time, under the common loading of the pulse driving source 1 and the modulation laser source 6, the output load 4 can output narrow-band microwaves, and the frequency of the output microwaves is the same as the modulation frequency of the laser. The laser trigger power required by the conduction of the photoconductive semiconductor switch 2 in the linear mode is generally large and is often more than 10kW magnitude, while the laser trigger power required by the conduction in the nonlinear mode is much smaller, which can be reduced by 3-5 magnitude compared with the linear mode, and at the moment, the system can only output ultra-wideband microwaves. The broadband high-power microwave source based on the photoconductive switch shown in fig. 1 cannot output narrow-band microwaves due to the low laser power emitted by the modulated laser source 6.
From the above, the microwave source based on the photoconductive semiconductor switch can output narrow-band microwave or ultra-wideband microwave, but the technical scheme that the microwave source can output high-power narrow-band and ultra-wideband microwave under the limitation of the modulated laser source has not been reported. The high-power microwave source combining the ultra-wideband and the narrow band with tunable frequency has important academic value and practical significance.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the high-power microwave source based on the photoconductive semiconductor switch realizes the combination of the narrow band and the ultra wide band with tunable frequency, which has the advantages of both the narrow band and the ultra wide band.
The technical scheme of the invention is as follows:
the invention is composed of a pulse driving source, a photoconductive semiconductor switch, a pulse laser source group, an output load and a laser source group controller. The pulse driving source is connected with the photoconductive semiconductor switch through conductive silver paste and is connected with the laser source group controller through a coaxial line; the photoconductive semiconductor switch is connected with the pulse driving source through conductive silver paste, the photoconductive semiconductor switch is connected with the pulse laser source group through an optical fiber, and the photoconductive semiconductor switch is connected with the output load through a coaxial line. The pulse laser light source group is connected with the photoconductive semiconductor switch and the laser light source group controller through optical fibers. The laser source group controller is connected with the pulse driving source through a coaxial line and connected with the pulse laser source group through an optical fiber. The coaxial line requires an impedance of 50 ohms.
The pulse driving source may be any one of a capacitive storage type pulse generator, an inductive storage type pulse generator, a pulse forming line type pulse generator, and a Blumlein structure pulse generator, as in the pulse driving source of fig. 1 in the background art. After the pulse driving source is charged, voltage is transmitted and loaded on the photoconductive semiconductor switch through the silver paste, and meanwhile, the voltage is transmitted to the laser source group controller. The voltage output can be made 0.3-10kV by setting the charging parameters of the pulse driving source.
The laser source group controller is a switch controller and consists of a voltage divider, a voltage conversion chip, a main control chip, and 4 serial ports, namely a first serial port, a second serial port, a third serial port and a fourth serial port.
One end of the voltage divider is connected with the pulse driving source through a coaxial line, and the other end of the voltage divider is connected with the voltage conversion chip through a conducting wire. The voltage divider converts a high-voltage signal received from the pulse driving source into a low-voltage signal according to 1000 times of a compression ratio, and sends the low-voltage signal to the voltage conversion chip. The voltage divider requires a withstand voltage higher than 20kV, such as P6015A from tex.
The voltage conversion chip is connected with the voltage divider and the main control chip through wires, and performs analog-to-digital conversion on the low-voltage signals received from the voltage divider to obtain digital low-voltage signals, and the digital low-voltage signals are transmitted to the main control chip. The voltage conversion chip is an analog-to-digital conversion chip, and can select an analog-to-digital conversion chip AD7606, AD7606-4 or AD 7606-6.
The main control chip is connected with the voltage conversion chip and the 4 serial ports through wires, receives digital low-voltage signals from the voltage conversion chip and judges the digital low-voltage signals. If the voltage of the digital low-voltage signal is within the range of 1.8-2.5kV, the main control chip sends a trigger signal to the first serial port to control the first serial port to be conducted, and then the laser diode works; if the voltage of the digital low-voltage signal is within the range of 2.5-3kV, the main control chip sends a trigger signal to the second serial port to control the second serial port to be conducted, and then the laser diode works; if the voltage of the digital low-voltage signal is within the range of 3-10kV, the main control chip sends a trigger signal to the third serial port to control the third serial port to be conducted, and then the laser diode works; if the voltage of the digital low-voltage signal is within the range of 0.3-1.8kV, the main control chip sends a trigger signal to the fourth serial port to control the fourth serial port to be conducted, and then the frequency modulation fiber laser works. The model of the main control chip can be ZYNQ7035 from Binxhong technology Limited.
The first serial port, the second serial port, the third serial port and the fourth serial port are respectively connected with a first laser diode, a second laser diode, a third laser diode and a frequency modulation optical fiber pulse laser through optical fibers.
The pulse laser light source group is a group of laser light sources different from the modulated laser light source in fig. 1, and is composed of 3 laser diodes (i.e., a first laser diode, a second laser diode, and a third laser diode) and a frequency-modulated fiber pulse laser. The first laser diode, the second laser diode and the third laser diode respectively emit laser light with the wavelength of 532nm, 876nm and 1064 nm to the photoconductive semiconductor switch, the power level is in the magnitude of 10W, and the pulse width is in the magnitude of 10 ns. The frequency and power of the frequency modulation fiber pulse laser are adjustable, the highest peak power is higher than 10kW, the pulse width is about 100 ns magnitude, and the wavelength of the frequency modulation fiber pulse laser can be 1064 nm or 532 nm. The first laser diode, the second laser diode, the third laser diode and the frequency modulation optical fiber pulse laser are respectively connected with the first serial port, the second serial port, the third serial port and the fourth serial port of the laser source group controller through optical fibers and connected with the photoconductive semiconductor switch through the optical fibers. When the first serial port is conducted, the first laser diode works; when the second serial port is conducted, the second laser diode works; when the third serial port is conducted, the third laser diode works; when the first laser diode, the second laser diode or the third laser diode works, the photoconductive semiconductor switch works in a nonlinear mode; when the fourth serial port is conducted, the frequency modulation fiber pulse laser works, and the photoconductive semiconductor switch works in a linear mode.
The photoconductive semiconductor switch is the same as the photoconductive semiconductor switch of fig. 1 in the background art, and may be made of gallium arsenide, silicon carbide, or the like, and has a thickness in the mm order, for example, in the range of 1.5-5 mm. When the first laser diode, the second laser diode or the third laser diode works, the photoconductive semiconductor switch works in a nonlinear mode, and generates ultra-wideband microwaves under the voltage (1.8-10 kV) applied by the pulse driving source and transmits the ultra-wideband microwaves to an output load; when the frequency modulation fiber pulse laser works, the photoconductive semiconductor switch works in a linear mode, the photoconductive semiconductor switch generates narrow-band microwaves under the voltage (0.3-1.8 kV) applied by a pulse driving source, the frequency of the narrow-band microwaves is the same as the modulation frequency of the frequency modulation fiber pulse laser, and if the modulation frequency of the frequency modulation fiber pulse laser is changed (which can be realized by setting different modulation frequencies for the frequency modulation fiber pulse laser and is the characteristic of the frequency modulation fiber pulse laser), the frequency of output microwaves is correspondingly changed, so that the frequency-adjustable narrow-band microwaves are output to an output load.
The output load is the same as in fig. 1, and a broadband antenna may be used. When the photoconductive semiconductor switch works in a nonlinear mode, the output load receives the ultra-wideband microwave from the photoconductive semiconductor switch and radiates the ultra-wideband microwave out; when the photoconductive semiconductor switch works in a linear mode, the output load receives the narrow-band microwave with adjustable frequency from the photoconductive semiconductor switch and radiates the narrow-band microwave.
The working principle of the invention is as follows: the pulse driving source applies a voltage signal to the laser source group controller, the laser source group controller controls the pulse laser source group to emit laser with different wavelengths and different powers to the photoconductive semiconductor switch, so that the photoconductive semiconductor switch is conducted, meanwhile, the pulse driving source applies a voltage in the range of 0.3-10kV to the conducted photoconductive semiconductor switch, and the photoconductive semiconductor switch generates microwaves under the combined action of the pulse driving source and the pulse laser source group and transmits the microwaves to an output load. The light guide semiconductor switch works in a nonlinear mode or a linear mode by controlling the working voltage of a pulse driving source and the wavelength and the power of laser emitted by a laser diode or a frequency-modulated fiber pulse laser in a pulse laser source group, so that ultra-wideband or narrowband microwave output is realized.
Compared with the prior art, the invention can achieve the following technical effects:
the high-power microwave source based on the photoconductive switch provided by the invention has tunable frequency, and can work in an ultra-wideband microwave output mode and a narrow-band microwave output mode.
Drawings
FIG. 1 is a schematic diagram of a conventional ultra-wideband high-power microwave source based on photoconductive semiconductor switches, which is introduced in the background art;
FIG. 2 is a schematic diagram of a logic structure of a combined narrowband and ultra wideband high power microwave source with tunable frequency according to the present invention;
fig. 3 is a schematic structural diagram of a laser source group controller in the high-power microwave source combining the narrow band and the ultra-wide band with tunable frequency according to the present invention.
Detailed Description
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention.
Fig. 1 is a schematic diagram of a conventional ultra-wideband high-power microwave source based on photoconductive semiconductor switches, which is introduced in the background art. The structure is composed of a pulse driving source 1, a photoconductive semiconductor switch 2, a modulated laser source 6 and an output load 4. The pulse driving source 1 can be a capacitance storage type pulse generator, an inductance storage type pulse generator, a pulse forming linear pulse generator, a Blumlein structure pulse generator and the like, and after the pulse driving source 1 is charged, a trigger signal is input to the modulation laser source 6; the modulated laser source 6 emits laser light to the photoconductive semiconductor switch 2; the photoconductive semiconductor switch 2 is a photoconductive switch, the photoconductive semiconductor switch 2 absorbs photons incident from the modulated laser light source 6, electrons in a valence band or a deep energy level are excited to a conduction band of the photoconductive semiconductor switch 2, free electrons or electron-hole pairs are generated to form free carriers, the resistivity of the photoconductive semiconductor switch 2 rapidly decreases, and the photoconductive semiconductor switch 2 is in a conducting state. The voltage of the pulse driving source 1 is loaded on the conducted photoconductive semiconductor switch 2 to generate ultra-wideband pulses, and the ultra-wideband pulses are output by an output load 4, so that ultra-wideband microwave output is obtained. However, the scheme cannot output narrow-band microwaves due to the low laser power emitted by the adopted modulation laser source 6.
Fig. 2 is a schematic diagram of a logic structure of a frequency tunable narrowband and ultra wideband combined high-power microwave source of the present invention. As shown in fig. 2, the present invention is composed of a pulse driving source 1, a photoconductive semiconductor switch 2, a pulse laser source group 3, an output load 4, and a laser source group controller 5. The pulse driving source 1 is connected with the photoconductive semiconductor switch 2 through conductive silver paste, and the pulse driving source 1 is connected with the laser source group controller 5 through a coaxial line; the photoconductive semiconductor switch 2 is connected with the pulse driving source 1 through conductive silver paste, the photoconductive semiconductor switch 2 is connected with the pulse laser source group 3 through an optical fiber, and the photoconductive semiconductor switch 2 is connected with the output load 4 through a coaxial line. The pulse laser light source group 3 is connected with the photoconductive semiconductor switch 2 and the laser light source group controller 5 through optical fibers. The laser source group controller 5 is connected with the pulse driving source 1 through a coaxial line and connected with the pulse laser source group 3 through an optical fiber. The coaxial line requires an impedance of 50 ohms.
The pulse driving source 1 may be a capacitive storage type pulse generator, an inductive storage type pulse generator, a pulse forming line type pulse generator, a Blumlein structure pulse generator, or the like, as in the pulse driving source 1 of fig. 1 of the related art. After the pulse driving source 1 is charged, the voltage is applied to the photoconductive semiconductor switch 2 through the silver paste transmission, and the voltage is transmitted to the voltage divider 51 in the laser source group controller 5. The pulse driving source can control the voltage to be 0.3-10kV by setting charging parameters.
Fig. 3 is a schematic structural diagram of a laser source group controller 5 in the high-power microwave source combining the frequency tunable narrow band and the ultra-wideband of the present invention. As shown in fig. 3, the laser source group controller 5 is a switch controller, and is composed of a voltage divider 51, a voltage conversion chip 52, a main control chip 53, and 4 serial ports, i.e., a first serial port 54, a second serial port 55, a third serial port 56, and a fourth serial port 57.
One end of the voltage divider 51 is connected with the pulse driving source 1 through a coaxial line, and the other end is connected with the voltage conversion chip 52 through a conducting wire. The voltage divider 51 converts the high voltage signal received from the pulse driving source 1 into a low voltage signal at a compression ratio of 1000 times, and transmits the low voltage signal to the voltage conversion chip 52. The voltage divider requires a withstand voltage higher than 20kV, such as P6015A from tex.
The voltage conversion chip 52 is connected to the voltage divider 51 and the main control chip 53 through wires, and the voltage conversion chip 52 performs analog-to-digital conversion on the low-voltage signal received from the voltage divider 51 to obtain a digital low-voltage signal, and transmits the digital low-voltage signal to the main control chip 53. The voltage conversion chip 52 is an analog-to-digital conversion chip, and can select an analog-to-digital conversion chip AD7606, AD7606-4 or AD 7606-6.
The main control chip 53 is connected with the voltage conversion chip 52 and the 4 serial ports through wires, and the main control chip 53 receives the digital low-voltage signals from the voltage conversion chip 52 and judges the digital low-voltage signals. If the voltage of the digital low-voltage signal is within the range of 1.8-2.5kV, the main control chip 53 sends a trigger signal to the first serial port 54 to control the first serial port 54 to be conducted, and then the first laser diode 31 works; if the voltage of the digital low-voltage signal is within the range of 2.5-3kV, the main control chip 53 sends a trigger signal to the second serial port 55 to control the second serial port 55 to be conducted, and then the second laser diode 32 works; if the voltage of the digital low-voltage signal is greater than 3kV, the main control chip 53 sends a trigger signal to the third serial port 56 to control the third serial port 56 to be conducted, and then the third laser diode 33 works; if the voltage of the digital low-voltage signal is within the range of 0.3-1.8kV, the main control chip 53 sends a trigger signal to the fourth serial port 57 to control the fourth serial port 57 to be turned on, and then the frequency-modulated fiber laser 34 works. The model of the main control chip 53 can be ZYNQ7035 from Binxhong technology Limited.
The first serial port 54, the second serial port 55, the third serial port 56 and the fourth serial port 57 are respectively connected with the first laser diode 31, the second laser diode 32, the third laser diode 33 and the frequency modulation fiber pulse laser 34 through optical fibers.
As shown in fig. 2, the pulsed laser source group 3 is a group of laser sources different from the modulated laser source 6 in fig. 1, and is composed of 3 laser diodes (i.e., a first laser diode 31, a second laser diode 32, and a third laser diode 33) and a frequency-modulated fiber pulse laser 34. The first laser diode 31, the second laser diode 32 and the third laser diode 33 respectively emit laser light with different wavelengths (such as 532nm, 876nm and 1064 nm) to the photoconductive semiconductor switch 2, the power level is in the order of 10W, and the pulse width is in the order of 10 ns. The frequency and power of the frequency modulation fiber pulse laser 34 are adjustable, the maximum peak power is higher than 10kW, the pulse width is about 100 ns, and the wavelength of the frequency modulation fiber pulse laser 34 can be selected to be 1064 nm or 532 nm. The first laser diode 31, the second laser diode 32, the third laser diode 33 and the frequency modulation fiber pulse laser 34 are respectively connected with the first serial port 54, the second serial port 55, the third serial port 56 and the fourth serial port 57 of the laser source group controller 5 through optical fibers and connected with the photoconductive semiconductor switch 2 through the optical fibers. When the first serial port 54 is turned on, the first laser diode 31 operates; when the second serial port 55 is turned on, the second laser diode 32 operates; when the third serial port 56 is conducted, the third laser diode 33 works; when the first laser diode 31, the second laser diode 32 or the third laser diode 33 works, the photoconductive semiconductor switch 2 works in a nonlinear mode; when the fourth serial port 57 is turned on, the fm fiber pulse laser 34 operates, and the photoconductive semiconductor switch 2 operates in the linear mode.
The photoconductive semiconductor switch 2 is the same as the photoconductive semiconductor switch 2 of fig. 1 in the background art, and may be made of gallium arsenide, silicon carbide, or the like, and has a thickness in the mm order, for example, in the range of 1.5-5 mm. When the first laser diode 31, the second laser diode 32 or the third laser diode 33 works, the photoconductive semiconductor switch 2 works in a nonlinear mode, and the photoconductive semiconductor switch 2 generates ultra-wideband microwaves under the voltage (1.8-10 kV) applied by the pulse driving source 1 and transmits the ultra-wideband microwaves to the output load 4; when the frequency modulation fiber pulse laser 34 works, the photoconductive semiconductor switch 2 works in a linear mode, the photoconductive semiconductor switch 2 generates narrow-band microwaves under the voltage (0.3-1.8 kV) applied by the pulse driving source 1, the frequency of the narrow-band microwaves is the same as the modulation frequency of the frequency modulation fiber pulse laser 34, and if the modulation frequency of the frequency modulation fiber pulse laser 34 is changed, the frequency of the output microwaves is correspondingly changed, so that the frequency-adjustable narrow-band microwaves are output to the output load 4.
The output load 4 is the same as the output load 4 in fig. 1, and a broadband antenna may be used. When the photoconductive semiconductor switch 2 works in a nonlinear mode, the output load 4 receives the ultra-wideband microwave from the photoconductive semiconductor switch 2 and radiates the ultra-wideband microwave; when the photoconductive semiconductor switch 2 operates in the linear mode, the output load 4 receives the frequency-tunable narrowband microwaves from the photoconductive semiconductor switch 2 and radiates them out.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention.
It will be clear to a person skilled in the art that the scope of the present invention is not limited to the examples discussed in the foregoing, but that several amendments and modifications thereof are possible without deviating from the scope of the present invention as defined in the attached claims. While the invention has been illustrated and described in detail in the drawings and the description, such illustration and description are to be considered illustrative or exemplary and not restrictive. The invention is not limited to the disclosed embodiments.
Variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed invention, from a study of the drawings, the disclosure, and the appended claims. In the claims, the term "comprising" does not exclude other steps or elements. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage. Any reference signs in the claims shall not be construed as limiting the scope of the invention.
Claims (10)
1. A high-power microwave source combining a tunable frequency narrow band and an ultra-wideband comprises a pulse driving source (1), a photoconductive semiconductor switch (2) and an output load (4), wherein the pulse driving source (1) is any one of a capacitive storage type pulse generator, an inductive storage type pulse generator, a pulse forming linear type pulse generator and a Blumlein structure pulse generator; the output load (4) adopts a broadband antenna; the microwave source is characterized by also comprising a pulse laser source group (3) and a laser source group controller (5); the pulse driving source (1) is connected with the photoconductive semiconductor switch (2) through conductive silver paste, and the pulse driving source (1) is connected with the laser source group controller (5) through a coaxial line; the photoconductive semiconductor switch (2) is connected with the pulse laser source group (3) through an optical fiber, and the photoconductive semiconductor switch (2) is connected with the output load (4) through a coaxial line; the pulse laser light source group (3) is connected with the photoconductive semiconductor switch (2) and the laser light source group controller (5) through optical fibers;
after the pulse driving source (1) is charged, voltage is transmitted and loaded onto the photoconductive semiconductor switch (2) through silver paste, and meanwhile, the voltage is transmitted to the laser source group controller (5); the voltage output is 0.3-10kV by setting the charging parameters of the pulse driving source (1);
the laser source group controller (5) is a switch controller and consists of a voltage divider (51), a voltage conversion chip (52), a main control chip (53), 4 serial ports, namely a first serial port (54), a second serial port (55), a third serial port (56) and a fourth serial port (57);
one end of the voltage divider (51) is connected with the pulse driving source (1) through a coaxial line, and the other end of the voltage divider is connected with the voltage conversion chip (52) through a conducting wire; the voltage divider (51) converts a high-voltage signal received from the pulse driving source (1) into a low-voltage signal and sends the low-voltage signal to the voltage conversion chip (52);
the voltage conversion chip (52) is connected with the voltage divider (51) and the main control chip (53) through leads, the voltage conversion chip (52) performs analog-to-digital conversion on the low-voltage signals received from the voltage divider (51) to obtain digital low-voltage signals, and the digital low-voltage signals are transmitted to the main control chip (53);
the main control chip (53) is connected with the voltage conversion chip (52) and the 4 serial ports through leads, and the main control chip (53) receives digital low-voltage signals from the voltage conversion chip (52) and judges the digital low-voltage signals; if the voltage of the digital low-voltage signal is within the range of 1.8-2.5kV, the main control chip (53) sends a trigger signal to the first serial port (54) to control the first serial port (54) to be conducted; if the voltage of the digital low-voltage signal is within the range of 2.5-3kV, the main control chip (53) sends a trigger signal to the second serial port (55) to control the second serial port (55) to be conducted; if the voltage of the digital low-voltage signal is within the range of 3-10kV, the main control chip (53) sends a trigger signal to the third serial port (56) to control the third serial port (56) to be conducted; if the voltage of the digital low-voltage signal is within the range of 0.3-1.8kV, the main control chip (53) sends a trigger signal to the fourth serial port (57) to control the fourth serial port (57) to be conducted;
the first serial port (54), the second serial port (55), the third serial port (56) and the fourth serial port (57) are respectively connected with a first laser diode (31), a second laser diode (32), a third laser diode (33) and a frequency modulation optical fiber pulse laser (34) of the pulse laser source group (3) through optical fibers;
the pulse laser light source group (3) consists of 3 laser diodes, namely a first laser diode (31), a second laser diode (32), a third laser diode (33) and a frequency modulation fiber pulse laser (34); the first laser diode (31), the second laser diode (32) and the third laser diode (33) respectively emit laser with different wavelengths to the photoconductive semiconductor switch (2), and the pulse width is in the magnitude of 10 ns; the frequency and power of the frequency modulation fiber pulse laser (34) are adjustable, and the pulse width is 100 ns magnitude; the first laser diode (31), the second laser diode (32), the third laser diode (33) and the frequency modulation optical fiber pulse laser (34) are respectively connected with a first serial port (54), a second serial port (55), a third serial port (56) and a fourth serial port (57) of the laser source group controller (5) through optical fibers and are connected with the photoconductive semiconductor switch (2) through the optical fibers; when the first serial port (54) is conducted, the first laser diode (31) works; when the second serial port (55) is conducted, the second laser diode (32) works; when the third serial port (56) is conducted, the third laser diode (33) works; when the first laser diode (31), the second laser diode (32) or the third laser diode (33) works, the photoconductive semiconductor switch (2) works in a nonlinear mode; when the fourth serial port (57) is conducted, the frequency modulation optical fiber pulse laser (34) works, and the photoconductive semiconductor switch (2) works in a linear mode;
when the first laser diode (31), the second laser diode (32) or the third laser diode (33) works, the photoconductive semiconductor switch (2) works in a nonlinear mode, and when the voltage applied by the pulse driving source (1) is 1.8-10kV, the photoconductive semiconductor switch (2) generates ultra-wideband microwaves and transmits the ultra-wideband microwaves to the output load (4); when the frequency modulation optical fiber pulse laser (34) works, the photoconductive semiconductor switch (2) works in a linear mode, when the voltage applied by the pulse driving source (1) is 0.3-1.8kV, the photoconductive semiconductor switch (2) generates narrow-band microwaves, the frequency of the narrow-band microwaves is the same as the modulation frequency of the frequency modulation optical fiber pulse laser (34), if the modulation frequency of the frequency modulation optical fiber pulse laser (34) is changed, the frequency of the output microwaves is correspondingly changed, and therefore the frequency-adjustable narrow-band microwaves are output to an output load (4);
when the photoconductive semiconductor switch (2) works in a nonlinear mode, the output load (4) receives the ultra-wideband microwave from the photoconductive semiconductor switch (2) and radiates the ultra-wideband microwave out; when the photoconductive semiconductor switch (2) works in a linear mode, the output load (4) receives the narrow-band microwave with adjustable frequency from the photoconductive semiconductor switch (2) and radiates the narrow-band microwave.
2. A combined narrowband and ultra-wideband high power microwave source as claimed in claim 1, characterised in that the coaxial line requires an impedance of 50 ohms.
3. The combined narrowband and ultra-wideband high power microwave source with tunable frequency according to claim 1, characterized by the voltage divider (51) converting the high voltage signal received from the pulsed driving source (1) into a low voltage signal with a 1000 times scaling.
4. A combined narrow-band and ultra-wideband high power microwave source as claimed in claim 1, characterised in that said voltage divider (51) requires a withstand voltage higher than 20 kV.
5. The combined narrowband and ultra-wideband high power microwave source of claim 4, characterised in that the voltage divider (51) employs P6015A from Tack, USA.
6. The combined narrowband and ultra-wideband high power microwave source of claim 1, wherein the voltage conversion chip (52) is an analog-to-digital conversion chip, and an analog-to-digital conversion chip AD7606, AD7606-4, AD7606-6 is used.
7. The combined narrowband and ultra-wideband high power microwave source of claim 1, wherein the main control chip (53) is ZYNQ7035 from Binhong technologies, Inc.
8. The combined narrow band and ultra wide band high power microwave source of claim 1 wherein said first laser diode (31), second laser diode (32), third laser diode (33) power level is on the order of 10W, the peak power of the frequency modulated fiber pulsed laser (34) is higher than 10 kW; the first laser diode (31), the second laser diode (32) and the third laser diode (33) respectively emit laser with the wavelength of 532nm, 876nm and 1064 nm to the photoconductive semiconductor switch (2), and the frequency modulation fiber pulse laser (34) emits laser with the wavelength of 1064 nm or 532nm to the photoconductive semiconductor switch (2).
9. The combined narrowband and ultra-wideband high power microwave source with tunable frequency according to claim 1, characterized in that the photoconductive semiconductor switch (2) is made of gallium arsenide or silicon carbide material with a thickness in the order of mm.
10. A combined narrow band and ultra wide band high power microwave source as claimed in claim 1, characterised in that the thickness of the photoconductive semiconductor switch (2) is 1.5-5 mm.
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