CN107045157A - Fold cross Terahertz film filter and preparation method - Google Patents
Fold cross Terahertz film filter and preparation method Download PDFInfo
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- CN107045157A CN107045157A CN201710072393.0A CN201710072393A CN107045157A CN 107045157 A CN107045157 A CN 107045157A CN 201710072393 A CN201710072393 A CN 201710072393A CN 107045157 A CN107045157 A CN 107045157A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/204—Filters in which spectral selection is performed by means of a conductive grid or array, e.g. frequency selective surfaces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
Cross Terahertz film filter is folded the invention discloses one kind, includes the metallic hole array and metallic film of some periodic arrangements, metallic hole array is embedded in inside metallic film.Metallic hole array be shaped as fold it is cross, metallic film be hollow out single-layer metal nickel film.Present invention also offers the preparation method of the structure.The structure intercouples between the metal grill unit based on hole array, and free electron resonates with incident electromagnetic wave in metal, forms enhancing transmission.The structure not only has the advantages that the flexibility on resonance centre Wavelength design, very high transmitance, makes primary resonance peak farther away from diffraction zone while folding the introducing of arm, realizes Out-of-band rejection good in a wider context, this is greatly improved filtering performance.
Description
Technical field
The present invention relates to a kind of Terahertz metal grill wave filter, more particularly to a kind of cross Terahertz film filter of folding
Ripple device and preparation method.
Background technology
With the fast development of Terahertz Technology, the application of the instruments of various Terahertzs in fields such as military affairs, communication, aviations
It is more and more wider.In Terahertz system, bandpass filter is indispensable element.Due to the metal grill each unit of hole array
Between intercouple, the free electron in metal resonates with incident electromagnetic wave, formed enhancing transmission, resonant wavelength is by structure
Size determine, therefore hole array metal mesh structure frequently as bandpass filter.Terahertz metal grill wave filter is quasi-optical
System and far infrared band be initially as spatial filter for refusal thermal background emission avoid sensitive detector saturation from sending out
What exhibition was got up.
In Terahertz space field, THz wave refers to frequency for 0.1~10THZ, between millimeter wave and infrared ray
Electromagnetic wave, take into account the advantage in terms of photonic propulsion and electronics.Terahertz metal grill wave filter as Terahertz system core
Heart element, except the frequency selectivity with general wave filter, noise filtering, gain balance etc. are acted in Terahertz system
Outside, due to the development of ultrafast opto-electronics technology, and in terms of the terahertz detection such as research of superhet and direct detector
Progress, Terahertz Technology is in image objects, environmental monitoring and safety inspection, medical diagnosis, radio astronomy, broadband connections, thunder
Also there is great scientific value and wide application prospect up to the field such as target identification.
Another important application of Terahertz metal grill wave filter is used as infrared sensor, the energy energy of required frequency
Fully absorbed through Terahertz lattice filter, and by the light-sensitive medium material below it, and unwanted radiation is then reflected
Fall；In near-infrared and visible region, Terahertz lattice filter is also devised to solar absorption surface, for helping to absorb
Solar energy.Sunshine in passband can be fully through the sunshine outside passband is then reflected, so as to obtain purer
Solar energy.
The structure of traditionally shaped metal grill, although the regulation to resonant wavelength and transmitance can be realized, but certainly
There is secondary lobe by spending low and metal mesh structure in shortwave area, these problems have a strong impact on the application as single tape bandpass filter.
The content of the invention
Goal of the invention：For problem above, the present invention proposes a kind of cross Terahertz film filter of folding and preparation
Method.
Technical scheme：To realize the purpose of the present invention, the technical solution adopted in the present invention is：One kind folding is cross too
Hertz film filter, includes the metallic hole array and metallic film of some periodic arrangements, metallic hole array is embedded in metal
Inside film.Metallic hole array be shaped as fold it is cross, metallic film be hollow out single-layer metal nickel film.
Each metal aperture includes 4 folding cross arm, and folding cross arm includes spider and fold arm, folds arm and hangs down
Directly in spider, and the directions of four folding arms are consistent.
A kind of preparation method for folding cross Terahertz film filter, comprises the following steps：
(3) in clean silicon chip substrate, using magnetron sputtering membrane process, one layer of copper metal film is deposited；
(4) it is being coated with the silicon chip substrate of layers of copper, with one layer of photoresist of spin coater spin coating, is utilizing uv-exposure technology, system
For the silicon chip substrate that must have design structure；
(3) the silicon chip substrate for having design structure is placed in metal nickel plating solution and electroplated, anode is metal during plating
Nickel plate, negative electrode is the copper plate silicon chip for having design structure, is prepared into the metal nickel film with substrate；
(4) metal nickel film with substrate is put into NH3H2O and H2O2Wet etching is carried out in solution, metal is eroded
Layers of copper between nickel and substrate silicon chip, so that metal nickel film is split away off from substrate, is prepared into single-layer metal nickel film；
(5) metallic film is put into acetone and heated, while additional ultrasound, dispels the photoresist in metallic nickel hole, prepared
Obtain the individual layer nickel metal aperture film of hollow out.
Beneficial effect：Realized the invention provides the secondary lobe in a kind of high-freedom degree, shortwave area farther away from main transmission peaks
The folding cross structure wave filter of the good Out-of-band rejection of bigger spectral range, and fold the preparation side of cross structure wave filter
Method.The cross Terahertz film filter of folding that the present invention is provided, not only with very high primary resonance peak transmitance, while by
Make the structure that there is more preferable flexibility ratio in the design of centre wavelength, transmitance and Sidelobe Suppression and make in the addition for folding arm
The secondary lobe in shortwave area is realized in the good Out-of-band rejection of bigger spectral range, so will greatly changed farther away from main transmission peaks
The filter effect of kind wave filter.
Brief description of the drawings
Fig. 1 is to fold cross Terahertz film filter schematic diagram；
Fig. 2 is to fold cross Terahertz film filter preparation method flow chart；
Fig. 3 is the micro- sem observation figure of wave filter practical structures；
Fig. 4 is the transmission measurement figure of wave filter practical structures.
Embodiment
Technical scheme is further described with reference to the accompanying drawings and examples.
It is of the present invention to fold cross Terahertz film filter, including some periodic arrangements as shown in Figure 1
Metallic hole array 1 and metallic film 2, metallic hole array 1 be shaped as fold it is cross, each metal aperture include 4 folding
Cross arm, folding cross arm includes spider and folds arm, is embedded in the inside of metallic film 2；Metallic film 2 is hollow out
Single-layer metal nickel film.About 6-12 microns of the thickness of metal film 2, preferably 8 microns；The cycle of metallic hole array 1 is micron dimension.
The Terahertz film filter is the free electron in metal based on intercoupling between hole array wire netting checkerwork cell each unit
Resonated with incident electromagnetic wave, form enhancing transmission, greatly improve the transmitance at primary resonance peak.
Folding arm is all had additional on every spider of cross metallic hole array 1, therefore claims folding cross, arm is folded and hangs down
Directly in spider, and the directions of four folding arms are consistent.Fold the addition of arm, primary resonance wavelength is elongated so that resonance
Wavelength farther away from shortwave area secondary lobe, while fold arm can realize the fine setting to resonant wavelength.The structure has design
It is more flexible and in bigger spectral range filter effect more excellent advantage.
Embodiment 1
As shown in Figure 3-4, the cycle g for setting metallic hole array 1 is 136 microns, the long a of principal arm is 98 microns, folds arm w and is
30 microns, the wide b of arm be 6 microns, it is possible to achieve resonant frequency be 1THZ wave filter.The thickness of metallic film 2 is about 8 microns.
It is the preparation method of the present invention for folding cross Terahertz film filter as shown in Figure 2, specifically includes
Following steps：
(1) take a piece of clean silicon chip as substrate, thickness is about 400nm, utilize magnetron sputtering membrane process, evaporation one
Copper metal film thick layer 100nm.Copper-plated metal film is in order to use copper facing conductive layer as negative electrode in follow-up plating, simultaneously
When being corroded, infringement of the corrosive liquid to metal nickel film is reduced.
(2) it is being coated with the silicon chip substrate of layers of copper, the su-82010 photoresists for being 12um with spin coater spin coating a layer thickness,
Using uv-exposure technology, the silicon chip substrate of design structure is prepared into.
(3) the silicon chip substrate for having design structure is placed in metal nickel plating solution and electroplated, anode is metal during plating
Nickel plate, negative electrode is the copper plate silicon chip for having design structure, at a temperature of 60 DEG C or so, plating 10min or so, is prepared into and carries
The metal nickel film of substrate.
(4) metal nickel film with substrate of preparation is put into NH3H2O and H2O2Solution in carry out wet etching, it is rotten
Layers of copper between eating away metallic nickel and substrate silicon chip, so that metal nickel film is split away off from substrate, is prepared into single layer of gold
Belong to nickel film.NH3H2O and H2O2Solution proportion preferably 1: 1.
(5) metallic film of preparation is put into acetone, and at 50-80 DEG C, heated 10 hours in preferably 60 DEG C of environment
Left and right, while additional ultrasound, dispels the photoresist in metallic nickel hole, is prepared into the individual layer nickel metal aperture film of hollow out.
The preparation method technique is simple, and reproducible, reliability is high, suitable for industrialized production.Combine present photoetching-
Electroplating technology and metal coating technique, can accurate control structure size, ensureing the base of repeatability and controllability
On plinth, good filter effect can be realized, with very wide application prospect.
Embodiment 2
As shown in Figure 3-4, the cycle g for setting metallic hole array 1 is 112 microns, the long a of principal arm is 62 microns, folds arm w and is
22 microns, the wide b of arm be 6 microns, realize resonant frequency be 1.5THZ wave filter.The thickness of metallic film 2 is about 8 microns, its
Remaining part point be the same as Example 1.
Embodiment 3
As shown in Figure 3-4, the cycle g for setting metallic hole array 1 is 98 microns, the long a of principal arm is 49 microns, folds arm w and is
15 microns, the wide b of arm be 6 microns, realize resonant frequency be 2.0THZ wave filter.The thickness of metallic film 2 is about 8 microns, its
Remaining part point be the same as Example 1.
Embodiment 4
As shown in Figure 3-4, the cycle g for setting metallic hole array 1 is 89 microns, the long a of principal arm is 41 microns, folds arm w and is
11 microns, the wide b of arm be 6 microns, realize resonant frequency be 2.5THZ wave filter.The thickness of metallic film 2 is about 8 microns, its
Remaining part point be the same as Example 1.
Claims (7)
1. one kind folds cross Terahertz film filter, it is characterised in that：Metal aperture battle array including some periodic arrangements
Row 1 and metallic film 2, metallic hole array 1 are embedded in the inside of metallic film 2.
2. according to claim 1 fold cross Terahertz film filter, it is characterised in that：Metallic hole array 1
Be shaped as fold it is cross, the cycle of metallic hole array 1 is micron dimension.
3. according to claim 1 fold cross Terahertz film filter, it is characterised in that：Metallic film 2 is to engrave
Empty single-layer metal nickel film, the thickness of metallic film 2 is 6-12 microns.
4. according to claim 1 fold cross Terahertz film filter, it is characterised in that：Each metal aperture includes
4 folding cross arm, folding cross arm includes spider and folds arm, folds arm perpendicular to spider, and four foldings
The direction of arm is consistent.
5. a kind of preparation method for folding cross Terahertz film filter, it is characterised in that：Comprise the following steps：
(1) in clean silicon chip substrate, using magnetron sputtering membrane process, one layer of copper metal film is deposited；
(2) it is being coated with the silicon chip substrate of layers of copper, with one layer of photoresist of spin coater spin coating, using uv-exposure technology, is being prepared into
There is the silicon chip substrate of design structure；
(3) the silicon chip substrate for having design structure is placed in metal nickel plating solution and electroplated, anode is metal nickel plate during plating,
Negative electrode is the copper plate silicon chip for having design structure, is prepared into the metal nickel film with substrate；
(4) metal nickel film with substrate is put into NH3H2O and H2O2Wet etching is carried out in solution, erode metallic nickel and
Layers of copper between substrate silicon chip, so that metal nickel film is split away off from substrate, is prepared into single-layer metal nickel film；
(5) metallic film is put into acetone and heated, while additional ultrasound, dispels the photoresist in metallic nickel hole, be prepared into and engrave
Empty individual layer nickel metal aperture film.
6. the preparation method according to claim 5 for folding cross Terahertz film filter, it is characterised in that：It is described
Photoresist is the photoresists of su-8 2010 in step (2).
7. the preparation method according to claim 5 for folding cross Terahertz film filter, it is characterised in that：It is described
NH in step (4)3H2O and H2O2Ratio be 1: 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710072393.0A CN107045157A (en) | 2017-02-09 | 2017-02-09 | Fold cross Terahertz film filter and preparation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710072393.0A CN107045157A (en) | 2017-02-09 | 2017-02-09 | Fold cross Terahertz film filter and preparation method |
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| CN107045157A true CN107045157A (en) | 2017-08-15 |
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| CN201710072393.0A Pending CN107045157A (en) | 2017-02-09 | 2017-02-09 | Fold cross Terahertz film filter and preparation method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107732379A (en) * | 2017-10-18 | 2018-02-23 | 西安天和防务技术股份有限公司 | Spatial filter |
| CN107732378A (en) * | 2017-10-18 | 2018-02-23 | 西安天和防务技术股份有限公司 | Frequency multiplication spatial filter |
| WO2019153465A1 (en) * | 2018-02-06 | 2019-08-15 | 雄安华讯方舟科技有限公司 | Terahertz band stop filter unit based on metamaterial and terahertz band stop filter |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202034470U (en) * | 2011-04-11 | 2011-11-09 | 中国计量学院 | Terahertz wave filter with cyclical swastika-shaped hollow-out structure |
-
2017
- 2017-02-09 CN CN201710072393.0A patent/CN107045157A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202034470U (en) * | 2011-04-11 | 2011-11-09 | 中国计量学院 | Terahertz wave filter with cyclical swastika-shaped hollow-out structure |
Non-Patent Citations (2)
| Title |
|---|
| K.D.MOLLER: "Cross-shaped bandpass filters for the near-and mid-infrared wavelength regions", 《APPLIED OPTICS》 * |
| 赵亮亮: "THz 金属网格带通滤波器的研究", 《中国优秀硕士论文数据库》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107732379A (en) * | 2017-10-18 | 2018-02-23 | 西安天和防务技术股份有限公司 | Spatial filter |
| CN107732378A (en) * | 2017-10-18 | 2018-02-23 | 西安天和防务技术股份有限公司 | Frequency multiplication spatial filter |
| CN107732378B (en) * | 2017-10-18 | 2020-03-31 | 西安天和防务技术股份有限公司 | Frequency multiplication spatial filter |
| CN107732379B (en) * | 2017-10-18 | 2020-10-02 | 西安天和防务技术股份有限公司 | Spatial filter |
| WO2019153465A1 (en) * | 2018-02-06 | 2019-08-15 | 雄安华讯方舟科技有限公司 | Terahertz band stop filter unit based on metamaterial and terahertz band stop filter |
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Application publication date: 20170815 |
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