CN112086758A - Double-control broadband terahertz wave absorber based on Dirac semimetal and water - Google Patents
Double-control broadband terahertz wave absorber based on Dirac semimetal and water Download PDFInfo
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Abstract
The invention discloses a dual-control and broadband terahertz wave absorber based on Dirac semimetal and water. In the invention, the absorption bandwidth and the absorption strength of the absorber can be changed by adjusting the Fermi level of the Dirac semimetal or the temperature of water. After parameter optimization and calculation, the absorption rate of the proposed absorber in the frequency range of 3.05-6.35THz is more than 90%, and the absorption bandwidth can reach 3.3 THz. Compared with the existing absorber, the absorption bandwidth of the designed device is obviously improved by more than 90%. The absorber is characterized in that the performance of the absorber can be adjusted by temperature control and electric control.
Description
Technical Field
The invention relates to the field of terahertz metamaterial wave absorption, in particular to a dual-control broadband terahertz wave absorber based on Dirac semimetal and water.
Background
Terahertz waves refer to electromagnetic waves having a frequency band ranging from 0.1 to 10 THz. In recent decades, the method has attracted great attention due to its wide application in biomedical imaging, sixth generation wireless communication, security detection and other engineering fields. Terahertz metamaterial absorbers are one of the most popular research branches at present due to their wide application. A typical metamaterial absorber is generally composed of a resonant cavity jointly composed of a periodic metal pattern, a dielectric layer and a bottom metal ground plate. However, there are two drawbacks that greatly hinder their use in reality. One disadvantage is that: the absorbers that have been studied are mostly based on metallic structures, the operating bandwidth of which is relatively narrow. To expand the absorption bandwidth, a multi-resonator combination method is generally adopted, in which a plurality of resonator elements of different sizes are combined in one unit, and resonator elements of different sizes are stacked in a direction perpendicular to the dielectric space. While broadband absorbers designed in this manner have made great strides in achieving the desired absorption, they are difficult to manufacture and process and difficult to integrate into actively controlled systems. Another disadvantage is that: the bandwidth and intensity of the absorption spectrum remain unchanged when the absorber is prepared. In order to realize tunable characteristics, two-dimensional or three-dimensional materials such as graphene, black phosphorus, vanadium dioxide, and strontium titanate have attracted more and more attention. For some designed tunable absorbers, the disadvantages are single tunable factor and narrow application range.
Therefore, the invention discloses a dual-control and broadband terahertz wave absorber based on Dirac semimetal and water, which can adjust the wave absorbing performance in two ways, thereby expanding the application range of the tunable absorber.
Disclosure of Invention
Aiming at the defects in the prior art, the invention discloses a dual-control broadband terahertz wave absorber based on a dirac semimetal and water, which can adjust the absorption characteristic in two ways.
In order to solve the technical problems, the invention adopts the following technical scheme:
a dual-control and broadband terahertz wave absorber based on Dirac semimetal and water comprises a plurality of wave absorbing units, wherein each wave absorbing unit comprises a metal layer, a dielectric layer and a Dirac semimetal pattern layer from bottom to top, and water is injected into the dielectric layer.
Preferably, the metal layer is gold.
Preferably, the dielectric layer is aluminum oxide.
Preferably, the medium layer is filled with water through an internal water injection cavity, and the water injection cavities of adjacent wave absorbing units are communicated.
Preferably, the wave absorbing unit is of a symmetrical structure.
Preferably, the dielectric layer and the metal layer are cubes with square cross sections, the cross section of the dirac half-metal pattern layer comprises a square part which is concentric with the cross section of the dielectric layer and has a side length parallel to the side length of the cross section of the dielectric layer, and further comprises a square ring part which is concentric with the square part and has a side length parallel to the side length of the square part, dirac half-metal pattern layer connecting parts extending towards the edge of the dielectric layer are further arranged in the middle of four outer sides of the square ring part, the axial line of the dirac half-metal pattern layer connecting parts points to the center of the square ring part and is parallel to the side of the square ring part, and the dirac half-metal pattern layer connecting parts of adjacent wave absorbing units are.
Preferably, a water injection cavity for water injection is arranged in the medium layer, the water injection cavity is a cube with a square cross section, the cross section of the water injection cavity is concentric with the cross section of the medium layer, the side length of the cross section of the medium layer is parallel to the side length of the cross section of the medium layer, a water injection cavity connecting part extending towards the edge of the medium layer is further arranged in the middle of the four outer side faces of the water injection cavity, the axis of the water injection cavity connecting part points to the center of the water injection cavity and is parallel to the side of the water injection cavity, and the.
In summary, the invention discloses a dual-control and broadband terahertz wave absorber based on dirac semimetal and water, which comprises a plurality of wave absorbing units, wherein each wave absorbing unit comprises a metal layer, a dielectric layer and a dirac semimetal pattern layer from bottom to top, and water is injected into the dielectric layer. In the invention, the working bandwidth and the absorption strength of the absorber can be adjusted by changing the Fermi level of the Dirac semimetal or the temperature of water. The absorption rate is more than 90% in the frequency range of 3.05-6.35THz, and the absorption bandwidth of more than 90% can reach 3.3 THz. Compared with the existing absorber, the absorption bandwidth of more than 90 percent is obviously improved.
Drawings
For purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made in detail to the present invention as illustrated in the accompanying drawings, in which:
FIG. 1 is a schematic structural diagram of a dual-control broadband terahertz wave absorber based on Dirac semimetal and water, which is disclosed by the present invention;
FIGS. 2(a) to 2(d) are respectively the absorption spectrum of the absorber without adding water and Dirac semimetal, the bulk power loss intensity of each part, the variation of the absorption spectrum with the polarization angle, and the relative impedance ZrReal and imaginary parts of (c).
Fig. 3(a) to 3(c) are front views of electric field distributions at the frequency points 3.36THz, 5THz and 6THz, respectively, under normal incidence.
Fig. 4(a) and 4(b) show the relationship between the absorptance in TE polarization and the incident angle θ, and the relationship between the absorptance in TM polarization and the incident angle θ, respectively.
FIGS. 5(a) to 5(f) show the absorption spectra as a function of Fermi level and frequency at 0 deg.C, 5 deg.C, 10 deg.C, 15 deg.C, 20 deg.C and 25 deg.C, respectively.
FIGS. 6(a) to 6(f) show absorption spectra as a function of temperature and frequency at Fermi levels of 10meV, 20meV, 30meV, 40meV, 50meV and 60meV, respectively.
Fig. 7(a) to 7(d) show the relationship between the geometric parameter and the absorption curve, respectively.
Description of reference numerals: metal layer 1, dielectric layer 2, water 3, dirac half metal pattern layer 4.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
As shown in fig. 1, the invention discloses a dual-control and broadband terahertz wave absorber based on dirac semimetal and water, which comprises a plurality of wave absorbing units, wherein each wave absorbing unit comprises a metal layer, a dielectric layer and a dirac semimetal pattern layer from bottom to top, and water is injected into the dielectric layer.
In recent years, dirac semimetal as a new quantum state substance has attracted great interest to researchers due to its dual characteristics in the terahertz frequency range. The dirac semimetal has the dual characteristics of metal and dielectric, with the metallic nature being more pronounced at operating frequencies below the fermi level, while at higher frequencies the dielectric response dominates. In addition, the dielectric constant of the dirac semimetal can be adjusted by changing the external gate voltage to be considered as three-dimensional graphene. Compared with graphene, three-dimensional dirac semimetals are easier to process and are less susceptible to interference from dielectric environments. These characteristics make dirac semimetals suitable for designing tunable absorbers. On the other hand, water is one of the most abundant, low-cost and harmless substances in nature. The dielectric constant of water has very high frequency dispersion in the microwave and terahertz frequency bands. Due to the high dielectric loss coefficient of water, previous studies have also designed different water-based absorbers. According to recent studies, it has been found that the dielectric constant of water can be adjusted by temperature. In addition, in the existing absorber, the temperature of the absorber is increased due to energy conversion in the wave absorbing process, and the wave absorbing performance of the absorber is changed. In the invention, because the specific heat capacity of water is larger, the temperature rise speed of the absorber can be slowed down, thereby improving the stability of the wave absorption performance of the whole absorber. Thus, water offers a great potential application for designing wide-band and temperature-controlled absorbers.
In the invention, the wave-absorbing units are arranged periodically in the x and y directions. The top layer of the wave absorbing unit is a Dirac semi-metal pattern array with the thickness of 0.6 mu m, the middle layer is alumina and water, the bottom layer of the wave absorbing unit is a continuous gold ground with the thickness of 0.2 mu m, and the conductivity of the wave absorbing unit is 4.56 multiplied by 107s/m. Further, the relative dielectric constant of alumina was 2.28, and the loss tangent angle was 0.04. The geometric parameters of the cell are optimized by numerical calculation, and the optimized parameters are as follows (unit: mum): p-46, L-44, h-11, t-9, a-28, b-14, c-22, w-4. Simulations were performed using a CST microwave studio with cell boundary conditions in the x and y directions and waves propagating in the z direction. The resulting absorbance a (ω) is generally calculated by a (ω) ═ 1-R (ω) -T (ω), where R (ω) and T (ω) represent the reflection coefficient and the transmission system, respectivelyAnd (4) counting. Furthermore, the angle θ is the angle between the electric field and the positive direction of the z-axis
Is the angle between the electric field and the x-axis.
The dirac semimetal is a controllable material, and the conductivity thereof can be written as:
wherein g-40 is a degeneracy factor,
t represents a non-zero temperature, n (E) is a Fermi distribution function,
the representation of the fermi kinetic energy is,
is the simplified planck constant. EFIs Fermi level, Fermi kinetic energy vF＝106m/s,
c＝Ec/EF(EcIs the cut-off energy, Ec＝3)
On the other hand, when the temperature 0. ltoreq. t.ltoreq.100 ℃ and the frequency 0. ltoreq. f.ltoreq.25 THz, the complex dielectric constant of water (f, t) ((f, t) + i ″ (f, t)) can be expressed as:
whereins(t)＝87.9144-0.404399t+9.58726×10-4t2-1.32802×10-6t3，Δi(t)＝aiexp(-bit)，
And i is 1,2, 3.
Δ4(t)＝p0+p1(t)+p2t2,f0(t)＝p3+p4t+p5t2+p6t3,τ4(t)＝p7+p8t+p9t2+p10t3,
Δ5(t)＝p11+p12t+p13t2,f1(t)＝p14+p15t+p16t2,τ5(t)＝p17+p18t+p19t2
Wherein, the complex permittivity of water is expressed, 'the real part of the permittivity of water is expressed,' the imaginary part is expressed,s、τi、f0、Δi、tcare all calculated coefficients.
When i is 1,2,3, j is 0,1, …, 19. a isi，bi，ci，di，pjAnd tcThe values of (A) are shown in Table 1.
TABLE 1
It can be seen from equations (1) - (5) that temperature and fermi energy are functions of the dielectric constant, and therefore absorbers designed with them will be tunable with temperature and fermi levels.
An absorption spectrum of a terahertz wave at normal incidence is shown in fig. 2 (a). The initial temperature of water and dirac semimetal was set at 15 ℃ and the fermi level of dirac semimetal was set at 30 meV. Since the dirac semimetal and the part of the structure in the middle containing water are symmetrical, the absorption of TE and TM polarizations at normal incidence will be the same. At the moment, the absorption bandwidth of the absorber above 90% can reach 3.3THz (3.05-6.35 THz). Fig. 2(a) shows the absorption without dirac semimetal and without water. When water is not injected into the absorber, the absorption rate in the frequency range of 3.68-6.49THz can reach more than 90%. However, if the top dirac semi-metal pattern is not added, the absorption rate cannot be more than 90%. In order to meet the design requirements, the Dirac semimetal pattern and water are simultaneously applied to the design in the design, and the absorption bandwidth is found to be obviously improved.
To better understand the function of each layer design, fig. 2(b) shows the power loss per unit volume in each structural material at an incident power of 0.5W. It can be found that water and dirac semimetal play an important role in the absorption of the incident wave, i.e. both water and dirac semimetal influence the absorption strength. Fig. 2(c) plots the absorption spectra at normal incidence for different polarization angles and it can be observed that this absorber has polarization insensitive properties due to the symmetry of the design.
The impedance matching theory helps to understand the physical mechanism of the high absorption rate of the developed wave-absorber over a wide frequency range. The impedance Z versus S parameter can be expressed as:
the corresponding absorption rate can be written as:
wherein ZrZ/120 Ω is the relative impedance. From the formula (7), it can be found that when ZrA higher absorption rate can be obtained when the real and imaginary parts of (a) are close to 1 and 0, respectively. FIG. 2(d) shows the calculated real and imaginary parts of the absorber relative impedance, which is known to be in the range of 3.05-6.35THzThe spatial matching was good, consistent with the results shown in fig. 2 (a).
To further understand the physical mechanism of broadband absorption, we also calculated the electric field intensity distribution at TE polarization (electric field parallel to x-axis) at frequencies f of 3.36, 5 and 6THz, respectively, as shown in fig. 3. It can be observed from fig. 3(a) - (c) that the electric field at each frequency point occurs mainly within the dirac semimetal and water layers, which means that the absorbed power in the volume is strong. Because the power consumption density can be calculated by the following expression:
where "denotes the imaginary part of the relative dielectric constants of the dirac semimetal and water, | E (x, y) | is the electric field strength. The absorption rate can be calculated as follows:
the denominator represents the power of the incident wave in relation to the incident angle θ over the projected area S. According to equations (2), (5), (8) - (9) and fig. 1. We further conclude that dirac semimetals and water help to enhance absorption. These absorption modes combine with each other to result in broadband absorption characteristics. The distribution of the TM polarization is rotated by 90 ° with respect to the distribution in the TE polarization, which is not described in detail here.
In practical applications, the angle-dependent properties are an important criterion for designing the absorber. Therefore, it is necessary to study the oblique angle dependence of TE and TM waves. Fig. 4 shows the absorption spectra for two polarizations at different oblique angles of incidence. As shown in fig. 4(a), the absorption bandwidth of TE polarization gradually decreases as the incident angle θ increases. When θ >10 °, the broadband absorption is divided into two absorption peaks. Furthermore, as θ increases, the center frequency of the first absorption band remains almost constant. However, for the second absorption band, the center frequency is red-shifted in the TE polarization. As shown in fig. 4(b), as θ increases from 0 ° to 60 °, the absorption bandwidth becomes wider, and the center frequency undergoes a blue shift. When θ approaches 25 °, there is a mark area with an absorption of less than 90% near 5 THz. This fluctuation phenomenon of the absorption bandwidth can be explained by equation (9). From equation (9), it can be seen that the absorption rate of TE polarization is proportional to cos (θ). However, cos (θ) is a monotonically decreasing function between 0 ° and 90 °. Therefore, the absorption rate is inversely proportional to the incident angle θ, with other factors remaining constant. For TM polarization, similar analysis indicates that the absorption rate is now proportional to the angle of incidence θ.
Due to change EFThe dielectric constant of the Dirac semimetal can be dynamically controlled, and EFCan be varied by bias voltage or alkaline surface doping. Thus, the operating band and absorption strength can be passed through EFTo tune. In addition, temperature has a great influence on the absorption performance. FIG. 5 shows E at different temperaturesFInfluence on the absorption rate. From FIGS. 5(a) - (f), we can find that when E isFIncreasing from 10 to 70meV, absorption bandwidths above 90% decrease gradually. When E isF<At 25meV, the absorption curve becomes discontinuous. Furthermore, it can be found in fig. 5(d) that T ═ 15 ℃ and EFAt 50meV there is a region around 4THz where the absorption is less than 90%. To illustrate more clearly the temperature tunable behavior, the temperature dependence of the absorption performance at different fermi levels is plotted in fig. 6.
The absorption properties of the absorber may change when the temperature of the water and dierac semimetal increases to some extent due to the conversion of most of the electromagnetic energy into heat in the absorber and changes the dielectric constant of these materials. Therefore, we also investigated the effect of temperature on the absorption performance. In general, the calculation formula of the dielectric constant of the dirac semimetal is suitable for the normal temperature condition. Therefore, we only consider the range of temperature variation from 0 ℃ to 25 ℃. Figure 6 shows the effect of temperature on the absorption at different fermi levels. As shown in fig. 6, when the fermi level is equal to 10 and 20meV, respectively, the temperature has a significant influence on the absorption performance.
The dual-control and broadband terahertz wave absorber based on the Dirac semimetal and the water is different from the existing tunable absorber, and the absorption bandwidth and the absorption intensity of the absorber disclosed by the invention can be controlled by Fermi energy and bias voltage and can also be adjusted by temperature. The numerical analysis result shows that under the normal incidence of electromagnetic waves, when the temperature of water is 15 ℃ and the Fermi level of the Dirac semimetal is 30meV, the absorption bandwidth can reach 3.3 THz. As previously theoretically assumed, the absorption bandwidth can be dynamically adjusted when the fermi level of the dirac semimetal is from 10 to 70meV, or the temperature of the water is from 0 to 25 ℃. The optimized result shows that the absorption rate is more than 90% in the frequency range of 3.05-6.35THz, and the absorption bandwidth of more than 90% can reach 3.3 THz. Compared with the existing absorber, the absorption bandwidth of more than 90 percent is obviously improved.
In a specific embodiment, the metal layer is gold.
The metal layer can also adopt other metal materials, such as silver, copper, aluminum and the like. The use of gold can reduce losses compared to the use of other materials.
In specific implementation, the dielectric layer is aluminum oxide.
The dielectric layer may also be made of other materials, such as silicon dioxide, magnesium fluoride, etc.
During specific implementation, the medium layer is filled with water through the water injection cavity inside, and the water injection cavities of adjacent wave-absorbing units are communicated.
In the invention, the water injection cavities of adjacent wave absorbing units are communicated, so that when a plurality of wave absorbing units are arranged in an array, water injection to all the wave absorbing units can be finished mainly by injecting water to the wave absorbing unit on the outermost periphery.
In specific implementation, the wave absorbing unit is of a symmetrical structure.
Therefore, the dual-control and broadband terahertz wave absorber based on the Dirac semimetal and the water disclosed by the invention has the polarization insensitivity.
In specific implementation, the dielectric layer and the metal layer are cubes with square cross sections, the cross section of the dirac semimetal pattern layer comprises a square part which is concentric with the cross section of the dielectric layer and has a side length parallel to the side length of the cross section of the dielectric layer, and also comprises a square ring part which is concentric with the square part and has a side length parallel to the side length of the square part, dirac semimetal pattern layer connecting parts extending towards the edges of the dielectric layer are further arranged in the middle of four outer sides of the square ring part, the axial lines of the dirac semimetal pattern layer connecting parts point to the center of the square ring part and are parallel to the sides of the square ring part, and the dirac semimetal pattern layer connecting parts of adjacent wave absorbing units are mutually communicated.
In the invention, the Dirac semi-metal pattern layer comprises a middle square part and an outer annular part, wherein the middle square part can absorb high-frequency electromagnetic waves, and the outer annular part can absorb low-frequency electromagnetic waves.
When the wave absorbing unit is specifically implemented, a water injection cavity for water injection is arranged in the medium layer, the water injection cavity is a cube with a square cross section, the cross section of the water injection cavity is concentric with the cross section of the medium layer, the side length of the cross section of the medium layer is parallel to the side length of the cross section of the medium layer, a water injection cavity connecting part extending towards the edge of the medium layer is further arranged in the middle of the four outer side faces of the water injection cavity, the axis of the water injection cavity connecting part points to the center of the water injection cavity and is parallel to the side of the.
In addition, to study the importance of the structural parameters, we also analyzed the effect of the geometric parameters b, a, L and t on the absorption rate and absorption bandwidth, and the results are shown in fig. 7. As in fig. 7(a), when the other geometric parameters are kept constant, as b increases from 10 μm to 18 μm, the absorption bandwidth of 90% or more increases and then decreases, and reaches a maximum of 3.3THz when b is 14 μm. The effect of the length (a) of the outer box of the dirac semimetal on the absorption performance was also studied, as shown in fig. 7(b), it is evident that as a increases, the absorption peak gradually decreases, while the operating frequency hardly changes. As can be seen from FIG. 7(c), the change in absorption properties with increasing L is similar to a. Fig. 7(d) shows the variation of the absorption performance with t, and as t increases, the spectral position of the absorption peak shows a red shift, and the corresponding absorption bandwidth first decreases, then increases, and finally decreases. The scanning results of the geometric parameters show that the absorber proposed by the inventor has high insensitivity to manufacturing errors.
Finally, it is to be understood that the foregoing examples are for illustrative purposes only and are not limiting, and that while the invention has been described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (7)
1. The double-control broadband terahertz wave absorber based on the Dirac semimetal and water is characterized by comprising an array formed by a plurality of wave absorbing units, wherein each wave absorbing unit comprises a metal layer, a medium layer and a Dirac semimetal pattern layer from bottom to top, and water is injected into the medium layer.
2. The dirac semimetal and water based dual control, broadband terahertz wave absorber of claim 1, wherein the metal layer is gold.
3. The dirac semimetal and water based dual control, broadband terahertz wave absorber of claim 1, wherein the dielectric layer is alumina.
4. The dual-control and broadband terahertz wave absorber based on the dirac semimetal and the water as claimed in any one of claims 1 to 3, wherein the dielectric layer is filled with water through an internal water injection cavity, and the water injection cavities of adjacent wave absorbing units are communicated.
5. The dirac semimetal and water based dual control, broadband terahertz wave absorber of claim 4, wherein the wave absorbing unit is a symmetric structure.
6. The dirac semimetal and water based double-control broadband terahertz wave absorber of claim 5, wherein the dielectric layer and the metal layer are cubes with square cross sections, the cross section of the dirac semimetal pattern layer comprises a square portion which is concentric with the cross section of the dielectric layer and has a side length parallel to that of the cross section of the dielectric layer, and a square ring portion which is concentric with the square portion and has a side length parallel to that of the square portion, dirac semimetal pattern layer connecting portions extending towards the edges of the dielectric layer are further arranged among the four outer sides of the square ring portion, the axis of the dirac semimetal pattern layer connecting portions points to the center of the square ring portion and is parallel to the sides of the square ring portion, and the dirac semimetal pattern layer connecting portions of adjacent wave absorbing units are mutually connected.
7. The dual-control and broadband terahertz wave absorber based on the dirac semimetal and the water as claimed in claim 6, wherein a water injection cavity for water injection is arranged inside the dielectric layer, the water injection cavity is a cube with a square cross section, the cross section of the water injection cavity is concentric with the cross section of the dielectric layer, the side length of the cross section of the dielectric layer is parallel to the side length of the cross section of the dielectric layer, a water injection cavity connecting part extending to the edge of the dielectric layer is further arranged in the middle of four outer side surfaces of the water injection cavity, the axis of the water injection cavity connecting part points to the center of the water injection cavity and is parallel to the side of the water injection cavity, and the water.
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| CN112928492A (en) * | 2021-01-25 | 2021-06-08 | 中国科学院上海光学精密机械研究所 | Tunable optical transparent broadband metamaterial wave absorber based on water layer |
| CN113809545A (en) * | 2021-10-08 | 2021-12-17 | 中国人民解放军空军工程大学 | Nonlinear wave-absorbing super surface for space electromagnetic waves |
| CN115548690A (en) * | 2022-11-23 | 2022-12-30 | 云南农业大学 | Dual-tuned absorber based on dirac semimetal and strontium titanate |
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