CN109687162A - A kind of adjustable three frequency ranges THz meta-material absorber based on dirac material - Google Patents
A kind of adjustable three frequency ranges THz meta-material absorber based on dirac material Download PDFInfo
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- CN109687162A CN109687162A CN201811377075.6A CN201811377075A CN109687162A CN 109687162 A CN109687162 A CN 109687162A CN 201811377075 A CN201811377075 A CN 201811377075A CN 109687162 A CN109687162 A CN 109687162A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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- G—PHYSICS
- G02—OPTICS
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Abstract
The invention discloses a kind of adjustable three frequency ranges THz meta-material absorber based on dirac material, including metal absorption layer, dielectric layer, reflecting layer composition lattice element, the reflecting layer is dirac material.Reflecting layer receives external drive, to adjust the fermi level in reflecting layer, to adjust the equivalent capacity between absorbed layer and reflecting layer, to realize the adjustable characteristic of the frequency of absorber.
Description
Technical field
The present invention relates to meta-material absorber fields, and in particular to a kind of adjustable three frequency ranges THz based on dirac material
Meta-material absorber.
Background technique
The structure of traditional meta-material absorber is made of three-decker, upper layer is absorbed layer, centre be dielectric layer, under
Layer be metallic reflector, the frequency characteristic of absorber can be carried out with transmission line model it is equivalent, using RLC to frequency characteristic progress
Analysis.
As the direction of research and development is different, in the research to meta-material absorber, it common are and determine frequency and Frequency Adjustable, also have
Single-frequency and multifrequency design, the research generally for the design of Frequency Adjustable is designed to the resonant element of absorbed layer, common
The resonant element for having grapheme material to design needs that electrode is arranged, passes through outside in the resonant element of grapheme material design
Voltage is added, to change Fermi's energy of two graphene disks of tuning, thus the resonance characteristic and stone of two graphene disks of control
Near-field coupling characteristic between black alkene disk.It is the equal of the size for changing the middle capacitor of resonant element, to realize frequency
It adjusts.But since graphene is very thin, when increasing electrode, extremely complex processing method is needed just to be able to achieve.
Summary of the invention
The purpose of the present invention is to provide a kind of adjustable three frequency ranges THz meta-material absorber based on dirac material, should
Structure can realize the adjusting to frequency in structure thicker reflecting layer.
The specific technical proposal of the invention is:
Including the lattice element that metal absorption layer stacked on top of one another, dielectric layer, reflecting layer form, the reflecting layer is Di's drawing
Gram material.Dirac material (Dirac Semimetal, DS).
Reflecting layer can motivate the fermi level for changing material with applied voltage, to realize the adjustable spy of absorber frequency
Property.
In the present invention, traditional metallic reflector is changed to dirac material, dirac material is also known as dirac half
Metal, dirac semimetal are a kind of completely new peculiar Topological Quantum materials.This material has electronically formed three-dimensional Di La
Gram wimble structure, the electronic structure of this material have the topological property of non-mediocrity, it also has the surface similar with topological insulator
State.
In the present invention, the fermi level for changing dirac material by increasing voltage drive outside reflecting layer, thus
The frequency of absorber is adjusted.In the mode of THz absorber of the invention, formed between absorbed layer and reflecting layer
Equivalent capacity forms equivalent capacity between absorbed layer becket, when being applied to reflecting layer voltage and changing, Fermi's energy of DS material
Grade, which will change correspondingly, causes the equivalent capacity between absorbed layer and reflecting layer to change, so when changing the voltage in reflecting layer
The absorption frequency of THz absorber can be adjusted.DS material is adjusted its fermi level as reflecting layer to realize by the present invention
The adjustable characteristic of absorber frequency, relative to graphene apply voltage the shortcomings that, only need to change absorber using DS material
The frequency that the bias voltage in public reflecting layer can complete all absorptive units is adjusted.Therefore, using DS material as reflection
Layer, has higher feasibility, in addition graphene can not be as the reflecting layer of absorber due to thickness.
In addition, transmissivity generally reduces with the increase of conductivity, when reflecting layer of the present invention to dirac material adds
When voltage, dirac material shows good conductivity and increases, and therefore, can realize in making alive to Terahertz
Wavelength region rate is almost 0 control, is absorbed with realizing to intimate the 100% of THz wave.Simultaneously as of the invention is pair
The control of the fermi level of dirac material may be implemented under the control in reflecting layer, realize the continuous control to absorptivity, can
To accomplish any absorptivity.And tradition controls the absorption in reflecting layer, can only accomplish two state of value, can only control absorption or not inhale
It receives, is unable to control absorption 5,10%, the control of this median can only accomplish intimate 100% or 0, this switch state, nothing
Method accomplishes the control of consecutive variations.
Generally speaking, the present invention utilizes the control to the fermi level of dirac material, serves as reflecting layer in the art,
Accomplish also accomplish the adjusting to frequency to the Multistage Control of absorptivity.Therefore a change is only needed, can be realized 2 kinds
Function.And dirac material is three-dimensional material, thickness can satisfy the needs for ingratiating with depth, suitably function as reflecting layer.
Preferably, in order to realize the absorption of multiband, the metal absorption layer is the metal layer of twin nuclei.
Preferably, the metal absorption layer is the metal layer of twin nuclei, the metal layer of the twin nuclei include one just
Rectangular outer ring and a square inner ring, square outer ring and square inner ring are arranged concentrically, and square outer ring and square
The corresponding sides of inner ring are arranged in parallel, and four sides of four of square inner ring angular square outer rings extend vertically that there are four resonance
Arm, and there is the gap greater than 0 between the end and end face square outer ring corresponding sides of four resonance arms, and in square
Only 1 resonance arm between ring and square inner ring corresponding sides.
Tool may be implemented there are three absorption peak in the structure, the absorptivity of these three absorption peaks can reach 99.5% with
On, the characteristics of due to traditional resonant element being usually non-centrosymmetry, central symmetry may be implemented with above structure in the present invention
The characteristics of, so insensitive to TE/TM polarized electromagnetic wave.Using above-mentioned double square ring, add the structure of four resonance arms, it can also be real
Suddenly the problem of dropping, will not occur for existing centre frequency, and entire absorption characteristic is at continuity, i.e., monotonic decreasing again after monotone increasing,
In entire absorption characteristic, only has a wave crest in each frequency range.
Preferably, the metal absorption layer is metal Au material, with a thickness of 0.2 μm.
The metal absorption layer with a thickness of 0.2 μm, the hem width of square outer ring are as follows: D4, the hem width of square inner ring is
D3, a length of D1 of resonance arm, the width of resonance arm are D3, the half of the bore of square outer ring is D2, the bore of square inner ring
Half is D, D=6 μm, D1=7.4 μm, D2=26.5 μm, D3=4 μm, D4=3.5 μm.
Lattice element is integrally in the cube structure of long 70um, width 70um, high 30um.
Dielectric layer is polyimide material, in long 70um, wide 70um, a height of 8 μm of cube structure.
The reflecting layer is in long 70um, wide 70um, a height of 20 μm of cube structure.
Compared with prior art, the present invention having the following advantages and benefits: the present invention has absorptivity high, polarizes
It is insensitive, it realizes and indifference, which absorbs, to be realized to TE/TM polarized electromagnetic wave.The advantages that structure is simply easy to process, and can lead to
The mode for crossing applied voltage, which is realized, absorbs frequency range tunable characteristic.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is the 3-D view of meta-material absorber cellular construction of the invention.
Fig. 2 is the top view of meta-material absorber cellular construction of the invention.
Fig. 3 is the conductivity and dielectric constant properties curve of DS material.
Fig. 4 is meta-material absorber absorption characteristic of the invention.
Fig. 5 is meta-material absorber absorption characteristic of the invention with fermi level (Ef) variation cloud atlas.
Fig. 6 is the equivalent lump R of model, L, C parameter schematic diagram.
Fig. 7 is the equivalent-circuit model of absorber.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, the present invention is made below with reference to embodiment
Further to be described in detail, exemplary embodiment of the invention and its explanation for explaining only the invention, are not intended as to this
The restriction of invention.
Embodiment one
A kind of adjustable three frequency ranges THz meta-material absorber based on dirac material, comprising the following steps:
Including the lattice element that metal absorption layer 1, dielectric layer 2, reflecting layer 3 form, the reflecting layer 3 is dirac material
Material.Reflecting layer 3 can receive external drive, to realize the fermi level in reflecting layer 3 as variableness.
In the present invention, traditional metallic reflector is changed to dirac material, dirac material is also known as dirac half
Metal, dirac semimetal are a kind of completely new peculiar Topological Quantum materials.This material has electronically formed three-dimensional Di La
Gram wimble structure, the electronic structure of this material have the topological property of non-mediocrity, it also has the surface similar with topological insulator
State.
In the present invention, the fermi level of dirac material can be adjusted by applying voltage, to realize absorption frequency
The adjusting of rate.Fig. 6 is the RLC oscillation circuit of absorber, wherein corresponding two absorption frequencies of big ring and small ring, big ring, small ring and
Resonance arm constitutes third absorption frequency, and equivalent lump RLC parameter is as shown in Figure 6.When changing the voltage in reflecting layer, so that it may
To change the fermi level in reflecting layer, the change of reflecting layer fermi level will affect the equivalent capacity between absorbed layer and reflecting layer
Size, to influence the absorption frequency of absorber.Therefore, there is higher feasibility, in addition as reflecting layer using DS material
Graphene can not be as the reflecting layer of absorber due to thickness.
THz absorber can carry out the equivalent circuit of three equivalent, of the invention frequency range THz absorbers such as with transmission line model
Shown in Fig. 7, Z0For vacuum impedance, Z01, Z02, Z03, θ1, θ2, θ3The respectively parameter of transmission line, lumped parameter therein: R1、R2、
R3、L1、L2、L3, Ci、Cij, i=j=1,2,3, CiEquivalent capacity between absorbed layer and reflecting layer, CijFor absorbed layer metal
Equivalent capacity between ring, Z1(R1, L1, C1+C11+C12+C13), Z2(R2, L2, C2+C21+C22+C23), Z3(R3, L3, C3+C31+C32
+C33) respectively correspond absorber three absorption frequencies lumped parameter.Z1、Z1、Z3Indicate the impedance of three RLC oscillation circuits,
When being applied to the change of reflecting layer voltage, the fermi level of DS material will change correspondingly the electricity caused between absorbed layer and reflecting layer
Hold CiIt changes, so the absorption frequency of THz absorber can be adjusted when changing the voltage in reflecting layer.The present invention is by DS
Material adjusts its fermi level as reflecting layer to realize the adjustable characteristic of absorber frequency, applies voltage relative to graphene
The shortcomings that, it can preferably be solved using DS material, it is only necessary to change the bias voltage in the public reflecting layer of absorber
The frequency for completing all absorptive units is adjusted.Therefore, there is higher feasibility, in addition graphite as reflecting layer using DS material
Alkene can not be as the reflecting layer of absorber due to thickness.
In addition, transmissivity generally reduces with the increase of conductivity, when reflecting layer of the present invention to dirac material adds
When voltage, dirac material shows good conductivity and increases, and therefore, can realize in making alive to Terahertz
Wavelength region rate is almost 0 control, is absorbed with realizing to intimate the 100% of THz wave.
Preferably, in order to realize the absorption of multiband, the metal absorption layer 1 is the metal layer of twin nuclei.
Preferably, the metal absorption layer 1 is the metal layer of twin nuclei, the metal layer of the twin nuclei include one just
Rectangular outer ring and a square inner ring, square outer ring and square inner ring are arranged concentrically, and square outer ring and square
The corresponding sides of inner ring are arranged in parallel, and four sides of four of square inner ring angular square outer rings extend vertically that there are four resonance
Arm, and there is the gap greater than 0 between the end and end face square outer ring corresponding sides of four resonance arms, and in square
Only 1 resonance arm between ring and square inner ring corresponding sides.
Tool may be implemented there are three absorption peak in the structure, the absorptivity of these three absorption peaks can reach 99.5% with
On, the characteristics of due to traditional resonant element being usually non-centrosymmetry, central symmetry may be implemented with above structure in the present invention
The characteristics of, so insensitive to TE/TM polarized electromagnetic wave.Using above-mentioned double square ring, add the structure of four resonance arms, it can also be real
Suddenly the problem of dropping, will not occur for existing centre frequency, and entire absorption characteristic is at continuity, i.e., monotonic decreasing again after monotone increasing,
In entire absorption characteristic, only has a wave crest in each frequency range.
Preferably, the metal absorption layer is metal Au material, with a thickness of 0.2 μm.
The metal absorption layer with a thickness of 0.2 μm, the hem width of square outer ring are as follows: D4, the hem width of square inner ring is
D3, a length of D of resonance arm1, resonance arm width be D3, the half of the bore of square outer ring is D2, the bore of square inner ring
Half is D, D=6 μm, D1=7.4 μm, D2=26.5 μm, D3=4 μm, D4=3.5 μm.
Lattice element is integrally in the cube structure of long 70um, width 70um.
Dielectric layer 2 is polyimide material, in long 70um, wide 70um, a height of 8 μm of cube structure.
The reflecting layer 3 is in long 70um, wide 70um, a height of 20 μm of cube structure.
Metal absorption layer 1 uses conductivity for 4.56 × 107The metal Au of S/m, absorber thickness are 0.2 μm；Polyamides is sub-
The dielectric constant of amine dielectric layer 2 is 3, and loss tangent angle is 0.06, with a thickness of 8 μm；The dielectric constant and conductivity in reflecting layer 3 are adopted
With data shown in Fig. 3, the conductivity in reflecting layer and the imaginary part of dielectric constant and real part change curve, wherein For
Reduced Planck constant, ω are angular frequency, EfFor the fermi level of DS material.With a thickness of 20 μm；The Meta Materials that the present invention designs
The lattice parameter of absorber unit is W=L=70 μm, and the width and length in dielectric layer 2 and reflecting layer 3 are W and L；Metal absorption layer
Including square outer ring and square inner ring, structural parameters are as shown in Fig. 2, D=6 μm, D1=7.4 μm, D2=26.5 μm, D3
=4 μm, D4=3.5 μm.
Fig. 4 is absorption characteristic of the present invention in THz wave band, and there are three absorb for tool within the scope of 0.3THz -3.9THz
Peak value is located at 0.8THz, at 1.78THz, 3.59THz, the absorptivity of these three absorption peaks can reach 99.5% with
On, and since the present invention has the characteristics that central symmetry, so insensitive to TE/TM polarized electromagnetic wave.
Fig. 5 is the cloud atlas of absorption characteristic provided by the invention and the variation with fermi level, as can be seen from the figure
Absorption peak of the invention can be adjusted by adjusting the fermi level in the reflecting layer DS to realize, the adjusting of fermi level can lead to
Cross the applied voltage realization for changing the reflecting layer DS.From figure 5 it can be seen that when the fermi level of DS material is 55meV, third
A absorption peak frequency is 3.25THz, and when fermi level is 85meV, absorption peak frequency shift (FS) is to 3.59THz, wherein can
To realize the adjusting of three-level, meanwhile, in the present invention, this what adjusting be far above, any tune of certain frequency range may be implemented
Section.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (9)
1. a kind of adjustable three frequency ranges THz meta-material absorber based on dirac material, including metal absorption layer (1), dielectric layer
(2), reflecting layer (3), the lattice element of composition, which is characterized in that the reflecting layer (3) is dirac material.
2. a kind of adjustable three frequency ranges THz meta-material absorber based on dirac material according to claim 1, feature
It is, the metal absorption layer (1) is the metal layer of twin nuclei.
3. a kind of adjustable three frequency ranges THz meta-material absorber based on dirac material according to claim 1, feature
It is, the metal absorption layer (1) is the metal layer of twin nuclei, and the metal layer of the twin nuclei includes a square outer ring
With a square inner ring, square outer ring and square inner ring are arranged concentrically, and pair of square outer ring and square inner ring
Side is answered to be arranged in parallel, four sides of four of square inner ring angular square outer rings are extended vertically there are four resonance arm, and four
There are the gap greater than 0, and square inner ring and pros between the end and end face square outer ring corresponding sides of resonance arm
Only has 1 resonance arm between shape inner ring corresponding sides.
4. a kind of adjustable three frequency ranges THz meta-material absorber based on dirac material according to claim 1, feature
It is, the metal absorption layer is metal Au material, with a thickness of 0.2 μm.
5. a kind of adjustable three frequency ranges THz meta-material absorber based on dirac material according to claim 3, feature
Be, the metal absorption layer with a thickness of 0.2 μm, the hem width of square outer ring are as follows: D4, the hem width of square inner ring is D3, humorous
The width of a length of D1, resonance arm that raise one's arm are D3, the half of the bore of square outer ring is D2, the half of the bore of square inner ring
For D, D=6 μm, D1=7.4 μm, D2=26.5 μm, D3=4 μm, D4=3.5 μm.
6. a kind of adjustable three frequency ranges THz meta-material absorber based on dirac material according to claim 1, feature
It is, lattice element is integrally in the cube structure of long 70um, width 70um, high 30um.
7. a kind of adjustable three frequency ranges THz meta-material absorber based on dirac material according to claim 1, feature
It is, dielectric layer (2) is polyimide material, in long 70um, wide 70um, a height of 8 μm of cube structure.
8. a kind of adjustable three frequency ranges THz meta-material absorber based on dirac material according to claim 1, feature
It is, the reflecting layer (3) is in long 70um, wide 70um, a height of 20 μm of cube structure.
9. a kind of adjustable three frequency ranges THz meta-material absorber based on dirac material according to claim 1, feature
It is, reflecting layer (3) receive external drive, to realize the fermi level in reflecting layer (3) for adjustable state.
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Cited By (5)
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| CN110988897A (en) * | 2019-11-18 | 2020-04-10 | 中国科学院大学 | High-precision single-light-path measuring method and device for displacement size and direction |
| CN111585040A (en) * | 2020-04-21 | 2020-08-25 | 桂林电子科技大学 | All-dielectric wave absorber based on graphene and Dirac semimetal |
| CN112086758A (en) * | 2020-09-14 | 2020-12-15 | 重庆大学 | Double-control broadband terahertz wave absorber based on Dirac semimetal and water |
| CN114597671A (en) * | 2022-03-22 | 2022-06-07 | 电子科技大学 | Optical transparent broadband wave absorber and preparation method thereof |
| CN115548691A (en) * | 2022-11-23 | 2022-12-30 | 云南农业大学 | Three-frequency-band double-tuned wave absorber based on Dirac semimetal and vanadium dioxide |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110988897A (en) * | 2019-11-18 | 2020-04-10 | 中国科学院大学 | High-precision single-light-path measuring method and device for displacement size and direction |
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| CN111585040A (en) * | 2020-04-21 | 2020-08-25 | 桂林电子科技大学 | All-dielectric wave absorber based on graphene and Dirac semimetal |
| CN111585040B (en) * | 2020-04-21 | 2022-03-15 | 桂林电子科技大学 | All-dielectric wave absorber based on graphene and Dirac semimetal |
| CN112086758A (en) * | 2020-09-14 | 2020-12-15 | 重庆大学 | Double-control broadband terahertz wave absorber based on Dirac semimetal and water |
| CN112086758B (en) * | 2020-09-14 | 2021-12-28 | 重庆大学 | Double-control broadband terahertz wave absorber based on Dirac semimetal and water |
| CN114597671A (en) * | 2022-03-22 | 2022-06-07 | 电子科技大学 | Optical transparent broadband wave absorber and preparation method thereof |
| CN115548691A (en) * | 2022-11-23 | 2022-12-30 | 云南农业大学 | Three-frequency-band double-tuned wave absorber based on Dirac semimetal and vanadium dioxide |
| CN115548691B (en) * | 2022-11-23 | 2024-05-07 | 云南农业大学 | Tri-band double-tuning wave absorber based on Dirac semi-metal and vanadium dioxide |
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