CN213026519U - Metamaterial terahertz adjustable absorber based on vanadium dioxide - Google Patents
Metamaterial terahertz adjustable absorber based on vanadium dioxide Download PDFInfo
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- CN213026519U CN213026519U CN202022545716.3U CN202022545716U CN213026519U CN 213026519 U CN213026519 U CN 213026519U CN 202022545716 U CN202022545716 U CN 202022545716U CN 213026519 U CN213026519 U CN 213026519U
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- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 title claims abstract description 80
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 53
- 238000010521 absorption reaction Methods 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000012782 phase change material Substances 0.000 abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 7
- 230000010287 polarization Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- DUSYNUCUMASASA-UHFFFAOYSA-N oxygen(2-);vanadium(4+) Chemical group [O-2].[O-2].[V+4] DUSYNUCUMASASA-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
本实用新型公开了一种基于二氧化钒的超材料太赫兹可调吸收器，包括多个吸收单元，每个所述吸收单元包括：图案层，包括两个垂直相交的椭圆形结构的二氧化钒层；介质层，设置在所述二氧化钒层的下方；反射层，设置在所述介质层的下方，所述反射层的厚度大于趋肤深度用以实现完全反射，本公开通过采用两个垂直相交的椭圆形结构的二氧化钒层，可以实现宽带的完美吸收效果，二氧化钒为相变材料，通过温度的改变可以使二氧化钒在绝缘体相与金属相之间转换，从而改变电导率，可实现改变吸收器的吸收率的功能。
The utility model discloses a vanadium dioxide-based metamaterial terahertz tunable absorber, comprising a plurality of absorption units, each of the absorption units comprising: a pattern layer, comprising two vertically intersecting elliptical structures of dioxide dioxide A vanadium layer; a dielectric layer, arranged below the vanadium dioxide layer; a reflective layer, arranged below the dielectric layer, the thickness of the reflective layer is greater than the skin depth to achieve complete reflection, the present disclosure adopts two A vanadium dioxide layer with a vertically intersecting elliptical structure can achieve a perfect broadband absorption effect. Vanadium dioxide is a phase change material. By changing the temperature, the vanadium dioxide can be converted between the insulator phase and the metal phase, thereby changing the Conductivity, which can achieve the function of changing the absorption rate of the absorber.
Description
Technical Field
The utility model relates to a terahertz device field, more specifically says, the utility model relates to a metamaterial terahertz is adjustable absorber now based on vanadium dioxide.
Background
Currently, the terahertz technology has become one of the very important subjects in this century, and has unique advantages and huge application prospects in important fields such as imaging, communication, astronomy, medical treatment and the like. In addition to the terahertz source and the detector, functional devices such as a terahertz modulator, a filter, a beam splitter, a polarizer, an absorber and the like are also indispensable in the terahertz system. Among these devices, the metamaterial absorbers have attracted much attention because they play a very important role in applications such as imaging, stealth, sensing, and the like.
The metamaterial absorber is a device which realizes high-efficiency absorption of incident electromagnetic waves through a special structural design, and when the electromagnetic waves are incident to the surface of the device, the energy of the electromagnetic waves is completely absorbed by the device in the form of electromagnetic loss. Compared with the traditional wave-absorbing device, the metamaterial has the advantages of high efficiency, good stability, small volume, customization and the like.
The metamaterial absorber generally has a three-layer structure, namely a resonant ring array, a metal wire layer and a medium layer in the middle in the vertical direction, and the total thickness of the metamaterial absorber is far smaller than the wavelength. The electric response of the resonant ring and the metal wire can be adjusted by changing the structural parameters of the metamaterial, and the perfect absorption is realized because the magnetic response corresponding to the coupling of the electric resonance of the resonant ring and the metal wire is also adjusted. The basic unit structure of a metamaterial absorber is generally composed of a patterned metal layer with a resonance peak provided at the top layer, a metal reflective layer at the bottom layer and a dielectric layer at the middle layer.
The terahertz wave absorber researched at home and abroad at present mainly realizes the absorption of terahertz waves by designing metal microstructures with different geometric forms and size parameters, and once the absorption function of a device is determined to be unadjustable, the application of the absorber is restricted, and the cost is high. Therefore, the design of the terahertz wave absorber capable of being flexibly tunable has very important significance.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical defect that a terahertz wave absorber in the prior art cannot be flexibly adjusted, the disclosure provides a metamaterial terahertz adjustable absorber based on vanadium dioxide, which can realize the absorption rate of the terahertz absorber, and the specific scheme is as follows.
A vanadium dioxide-based metamaterial terahertz tunable absorber comprising a plurality of absorption units, each absorption unit comprising:
the pattern layer comprises two vanadium dioxide layers with vertically intersected elliptical structures;
the dielectric layer is arranged below the vanadium dioxide layer;
and the reflecting layer is arranged below the dielectric layer, and the thickness of the reflecting layer is greater than the skin depth so as to realize complete reflection.
According to some embodiments of the present disclosure, the operating temperature of the vanadium dioxide layer is between 300K and 350K, and the electrical conductivity of the vanadium dioxide layer is 2 × 102S/m and 2X 105And S/m.
According to some embodiments of the present disclosure, the plurality of absorption units are periodically arranged on the base layer.
According to some embodiments of the present disclosure, the thickness of the two vanadium dioxide layers of the vertically intersecting elliptical structure is the same.
According to some embodiments of the disclosure, the thickness of the vanadium dioxide layer is 80 x (1 ± 5%) nm.
According to some embodiments of the disclosure, the length of the longer semi-axis of the ellipse of the vanadium dioxide layer is 14 x (1 ± 5%) μm and the length of the shorter semi-axis of the ellipse of the vanadium dioxide layer is 8 x (1 ± 5%) μm.
According to some embodiments of the present disclosure, the dielectric layer has a square cross section, and a side length of the square is 30 μm.
According to some embodiments of the disclosure, the dielectric layer has a thickness of 12 × m (1 ± 5%) and a dielectric constant of ∈ 3.8.
According to some embodiments of the disclosure, the reflective layer is a metallic reflective layer, the metallic reflective layer material comprising one of: copper, silver, aluminum, gold.
According to some embodiments of the present disclosure, the reflective layer is made ofGold, the thickness of the reflecting layer is 0.1-0.2 μm, and the conductivity is 4.56 × 107S/m。
Through the technical scheme, the two vanadium dioxide layers which are vertically intersected and have the oval structures are adopted in the absorber, the perfect absorption effect of the broadband can be achieved, in addition, the vanadium dioxide is a phase-change material, the vanadium dioxide can be converted between the insulator phase and the metal phase through the change of the temperature, the conductivity is changed, and finally the absorption rate of the absorber is changed.
Drawings
Fig. 1 schematically illustrates an absorption unit structure diagram of a vanadium dioxide-based metamaterial terahertz tunable absorber according to an embodiment of the present disclosure;
FIG. 2 schematically illustrates a top view of an absorption unit of a vanadium dioxide-based metamaterial terahertz tunable absorber according to an embodiment of the present disclosure;
fig. 3 schematically shows an absorption spectrum of a vanadium dioxide layer of the vanadium dioxide-based metamaterial terahertz tunable absorber according to the embodiment of the disclosure when the vanadium dioxide layer is in a metal phase;
fig. 4 schematically shows the absorption rate of the terahertz tunable absorber based on vanadium dioxide of the embodiment of the present disclosure under incidence of different polarization angles;
FIG. 5 schematically shows absorption spectra of a vanadium dioxide layer of a vanadium dioxide-based metamaterial terahertz tunable absorber according to an embodiment of the present disclosure at different conductivities;
wherein, 1 represents a pattern layer; 2 represents a dielectric layer; and 3 denotes a reflective layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings.
It should be understood that the description is intended to be illustrative only and is not intended to limit the scope of the present invention. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It may be evident, however, that one or more embodiments may be practiced without these specific details. Furthermore, in the following description, descriptions of well-known technologies are omitted so as to avoid unnecessarily obscuring the concepts of the present invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "comprising" as used herein indicates the presence of the features, steps, operations but does not preclude the presence or addition of one or more other features.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having meanings consistent with the context of the present specification and should not be interpreted in an idealized or overly formal manner, such as the skin effect, in which the current distribution within a conductor is uneven when an alternating current or alternating electromagnetic field is present in the conductor, the current being concentrated in the "skin" portion of the conductor, i.e., the current being concentrated in a thin layer on the exterior of the conductor, the closer to the surface of the conductor the greater the current density, the less current actually flows within the conductor, and the skin depth, which refers to the thickness at which most of the charge is present as it propagates within the conductor.
In order to solve the technical defect that a terahertz wave absorber in the prior art cannot be flexibly adjusted, the disclosure provides a metamaterial terahertz adjustable absorber based on vanadium dioxide, which can realize the absorption rate of the terahertz absorber, and the specific scheme is as follows.
Fig. 1 schematically shows an absorption unit structure schematic diagram of a vanadium dioxide-based metamaterial terahertz tunable absorber according to an embodiment of the present disclosure.
A vanadium dioxide-based metamaterial terahertz tunable absorber comprises a plurality of absorption units as shown in figure 1, wherein each absorption unit comprises a pattern layer 1, a dielectric layer 2 and a reflecting layer 3 from top to bottom in sequence.
According to some embodiments of the present disclosure, the pattern layer 1 includes two vanadium dioxide layers of a vertically intersecting elliptical structure.
According to some embodiments of the present disclosure, optionally, the two ellipses are concentrically arranged, and the major semi-axes of the two ellipses are perpendicular to each other, so that the whole structure presents a symmetrical structure, and the influence of the polarization angle on the absorption rate can be reduced.
According to some embodiments of the disclosure, the lengths of the major half shaft and the minor half shaft of the ellipse of the vanadium dioxide layer can affect the working frequency of the terahertz adjustable absorber, and optionally, the lengths of the corresponding major half shaft and the minor half shaft can be adjusted according to actual needs to meet the requirement of the actual working frequency on site.
According to some embodiments of the present disclosure, the vanadium dioxide structure with vertically intersected double ellipses can realize perfect absorption effect of a broadband when the vanadium dioxide layer is in a metal phase.
According to some embodiments of the present disclosure, a dielectric layer 2 is disposed below the vanadium dioxide layer.
According to some embodiments of the present disclosure, the dielectric layer 2 is a silicon dioxide layer.
According to some embodiments of the present disclosure, the vanadium dioxide layer with the two perpendicular intersecting elliptical structures is hollowed out in the center of the silicon dioxide layer.
According to some embodiments of the disclosure, the thickness of the vanadium dioxide layer is 80 x (1 ± 5%) nm.
According to some embodiments of the present disclosure, a reflective layer 3 is disposed below the dielectric layer, the thickness of the reflective layer being greater than the skin depth for achieving complete reflection.
According to some embodiments of the present disclosure, the operating temperature of the vanadium dioxide layer is between 300K and 350K, which corresponds to an electrical conductivity of the vanadium dioxide layer of 2 x 102S/m and 2X 105And S/m.
According to some embodiments of the present disclosure, vanadium dioxide is a phase change material.
According to some embodiments of the present disclosure, the temperature of the vanadium dioxide increases from 300K to 350K, and the phase transition is synchronized and gradually changed from the insulator phase to the metal phase. The conductivity of the conductive coating is synchronously 2 multiplied by 102S/m is increased to 2X 105S/m。
According to some embodiments of the present disclosure, the vanadium dioxide may be changed from the insulating phase to the metallic phase by controlling the external temperature, so that the absorption rate of the absorber may be dynamically adjustable.
According to some embodiments of the present disclosure, the plurality of absorbent units is periodically arranged on the base layer.
According to some embodiments of the present disclosure, the thickness of the two vanadium dioxide layers of the vertically intersecting elliptical structure is the same.
According to some embodiments of the present disclosure, the length of the longer semiaxis of the ellipse of the vanadium dioxide layer is 14 x (1 ± 5%) μm and the length of the shorter semiaxis of the ellipse of the vanadium dioxide layer is 8 x (1 ± 5%) μm.
According to some embodiments of the present disclosure, the dielectric layer 2 has a square cross-section with a side length of 30 μm.
According to some embodiments of the present disclosure, the dielectric layer 2 has a thickness of 12 × m (1 ± 5%) and a dielectric constant of ∈ 3.8.
According to some embodiments of the present disclosure, the loss of the dielectric layer 2 is negligible in the terahertz band.
According to some embodiments of the present disclosure, the reflective layer 3 is a metal reflective layer, and the metal reflective layer material includes one of the following: copper, silver, aluminum, gold.
According to some embodiments of the present disclosure, the reflective layer 3 is made of gold, the reflective layer has a thickness of 0.1 μm to 0.2 μm, and an electrical conductivity of 4.56 × 107S/m。
Fig. 2 is a top view of an absorption unit of a vanadium dioxide-based metamaterial terahertz tunable absorber, wherein the period (side length) of the absorption unit is P-30 μm, the ellipse major axis of the top vanadium dioxide layer is a-14 μm, and the ellipse minor axis is b-8 μm. The incident wave propagates from top to bottom along the Z-axis, with the electric field polarization direction along the X-axis.
According to some embodiments of the present disclosure, the electrical conductivity σ of vanadium dioxide is 2 × 10 when the temperature is 350K5S/m, the vanadium dioxide layer is in a metal phase, as shown in FIG. 3, the absorption spectrum of the vanadium dioxide layer of the vanadium dioxide metamaterial terahertz tunable absorber is in the metal phase, and it can be seen that under normal incidence, a very wide absorption band with the absorption rate exceeding 80% in the range of 1.1-3.2THz is obtained.
According to some embodiments of the present disclosure, the influence of the polarization angle is one of the very important properties of the absorber, as shown in fig. 4, the absorption rate of the incident wave of the metamaterial terahertz tunable absorber based on vanadium dioxide under the incidence of different polarization angles is shown, and it can be clearly seen that, due to the symmetry of the absorption unit, the change of the polarization angle does not affect the absorption rate.
According to some embodiments of the present disclosure, the electrical conductivity of the vanadium dioxide may be controlled by temperature, a change in the electrical conductivity further affects the dielectric properties of the vanadium dioxide, and the absorption rate of the absorber is affected by the dielectric properties of the vanadium dioxide, so that the absorption rate of the absorber may be continuously adjusted by a change in temperature. As shown in FIG. 5, the absorption spectra of the vanadium dioxide layer of the metamaterial terahertz tunable absorber based on vanadium dioxide at different conductivities are shown, when the temperature is increased from 300K to 350K, the vanadium dioxide is converted from an insulator phase to a metal phase, and the conductivity is from 2 x 102S/m is increased to 2 x 105S/m, the absorption rate of the absorber can be regulated and controlled from 0.01% to 83% at 2.4THz, and the modulation performance is stable and reliable.
According to some embodiments of the present disclosure, as shown in fig. 5, when the conductivity is 2 × 105S/m, vanadium dioxide is a metal phase, and the absorber achieves the best performance.
Through the technical scheme, the two vanadium dioxide layers which are vertically intersected and have the oval structures are adopted in the absorber, the perfect absorption effect of the broadband can be achieved, in addition, the vanadium dioxide is a phase-change material, the vanadium dioxide can be converted between the insulator phase and the metal phase through the change of the temperature, the conductivity is changed, and finally the absorption rate of the absorber is changed.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. In addition, the above definitions of the components are not limited to the specific structures, shapes or manners mentioned in the embodiments, and those skilled in the art may easily modify or replace them.
It is also noted that, unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing dimensions, range conditions, and so forth, used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
It will be appreciated by a person skilled in the art that various combinations and/or combinations of features described in the various embodiments and/or the claims of the present invention are possible, even if such combinations or combinations are not explicitly described in the present invention. In particular, various combinations and/or combinations of the features recited in the various embodiments and/or claims of the present invention may be made without departing from the spirit and teachings of the invention. All such combinations and/or associations fall within the scope of the present invention.
The above-mentioned embodiments, further detailed description of the objects, technical solutions and advantages of the present invention, it should be understood that the above-mentioned embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
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| CN113219566A (en) * | 2021-05-10 | 2021-08-06 | 东北师范大学 | Polarization sensitive broadband response long-wave infrared metamaterial absorber |
| CN115377694A (en) * | 2022-08-09 | 2022-11-22 | 电子科技大学长三角研究院(湖州) | 1bit real-time programmable intelligent surface with broadband |
| CN115542446A (en) * | 2022-09-08 | 2022-12-30 | 北京亮亮视野科技有限公司 | Super surface grating, two-dimensional diffraction optical waveguide, and near-to-eye display device |
| CN116315731A (en) * | 2023-04-17 | 2023-06-23 | 山东大学 | Broadband metamaterial wave absorber based on resistive film |
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- 2020-11-06 CN CN202022545716.3U patent/CN213026519U/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113219566A (en) * | 2021-05-10 | 2021-08-06 | 东北师范大学 | Polarization sensitive broadband response long-wave infrared metamaterial absorber |
| CN113219566B (en) * | 2021-05-10 | 2022-09-16 | 东北师范大学 | Polarization-Sensitive Broadband Responsive Longwave Infrared Metamaterial Absorber |
| CN115377694A (en) * | 2022-08-09 | 2022-11-22 | 电子科技大学长三角研究院(湖州) | 1bit real-time programmable intelligent surface with broadband |
| CN115542446A (en) * | 2022-09-08 | 2022-12-30 | 北京亮亮视野科技有限公司 | Super surface grating, two-dimensional diffraction optical waveguide, and near-to-eye display device |
| CN116315731A (en) * | 2023-04-17 | 2023-06-23 | 山东大学 | Broadband metamaterial wave absorber based on resistive film |
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