CN209045776U - A kind of super wideband and tunable THz wave absorbing device based on vanadium dioxide phase-change material - Google Patents
A kind of super wideband and tunable THz wave absorbing device based on vanadium dioxide phase-change material Download PDFInfo
- Publication number
- CN209045776U CN209045776U CN201821446265.4U CN201821446265U CN209045776U CN 209045776 U CN209045776 U CN 209045776U CN 201821446265 U CN201821446265 U CN 201821446265U CN 209045776 U CN209045776 U CN 209045776U
- Authority
- CN
- China
- Prior art keywords
- vanadium dioxide
- absorbing device
- layer
- wave absorbing
- change material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The super wideband and tunable THz wave absorbing device based on vanadium dioxide phase-change material that the utility model discloses a kind of, including bottom reflecting plate, four layers of structural unit stacked gradually are provided on the bottom reflecting plate, the structural unit sequentially consists of first medium substrate, middle layer vanadium dioxide resonant layer, second medium substrate and top layer vanadium dioxide resonant layer；Each layer vanadium dioxide resonant layer is made of four vanadium dioxide resonant elements, the center of four vanadium dioxide resonant elements is disposed below at the two cornerwise 1/4 of the medium substrate sticked, its thickness is 0.2 μm, and in each layer diagonal two resonant element size it is identical.The utility model is based on the double-deck coplanar structure, using vanadium dioxide phase-change material, realizes wave absorbing device in the wideband adjustable of THz wave band.The wave absorbing device has the characteristics that flexible design, temperature control are tunable, has a wide range of application, functional.
Description
Technical field
The utility model relates to a kind of wave absorbing device, specifically a kind of ultra wide band based on vanadium dioxide phase-change material can
THz wave absorbing device is tuned, radio communication, THz devices field are belonged to.
Background technique
Meta Materials are a kind of artificial compound materials, they have characteristic not available for the material of some natures, than
Such as negative permittivity, negative index etc..Due to the peculiar physical characteristic of Meta Materials, extensive researching value is made it have.Super material
The cellular construction size of material is far smaller than the wavelength of its work, by artificial design, can achieve the property etc. to Meta Materials
The purpose regulated and controled.The J.B.Pendry professor of Britain's Imperial College of Science and Technology utilizes split ring resonator array in leaf at the end of the 20th century
Magnetic conductivity has been separately designed out less than 0 and artificial compound material of the dielectric constant less than 0 with parallel metal linear array.
D.R.Smith professor had devised one-dimensional double negative materials in 2000, and two-dimentional double negative materials were had devised in 2001.This
Afterwards, Meta Materials have caused the extensive concern of researchers.
Nineteen fifty-nine, Morin have found the phase-change characteristic of the oxide of vanadium, and hereafter, people produce this characteristic dense
Interest.VO2Phase transition temperature be 68 DEG C, be otherwise known as room temperature phase-change material, and people especially pay close attention to it.The most common VO2System
Preparation Method is reactive sputtering, and it is simple, easy to operate that this method has the advantages that equipment, thus is widely used.
When temperature becomes high temperature from low temperature, VO2It can become the metallic state of low-resistance from the insulation state of high resistant, this unique property makes
VO2Scene effect pipe, signal transmission and THz device etc. have a wide range of applications.S.Sengupta etc. is prepared for VO2It receives
Meter Shu utilizes VO for preparing field effect transistor2Temperature control phase-change characteristic, apply different grid voltages to study VO2It is right
The modulating action of transistor.M.Seo etc. is prepared for based on VO2The Terahertz nano-antenna of thin film phase change.Science and technology increasingly
Today of development, VO2Excellent performance makes it with important researching value.
Tunability is an important performance characteristic of Meta Materials wave absorbing device, the Meta Materials wave absorbing device tool based on phase-change material
There is excellent tunability energy, thus receives significant attention.The utility model is based on the double-deck coplanar structure and is designed, resonance list
The material of member uses vanadium dioxide, realizes the wave absorbing device in the dynamic tuning of THz wave band by temperature control.
Summary of the invention
The technical problems to be solved in the utility model is overcome the deficiencies in the prior art, and is provided a kind of based on vanadium dioxide
The super wideband and tunable THz wave absorbing device of phase-change material converts medium, the metal shape of vanadium dioxide resonant element by external temperature control
State, to realize wave absorbing device in the dynamic tuning of THz wave band.
The utility model uses following technical scheme in order to solve the above problem: a kind of super based on vanadium dioxide phase-change material
Wideband adjustable THz wave absorbing device, including bottom reflecting plate are provided with four layers of structure list stacked gradually on the bottom reflecting plate
Member, the structural unit sequentially consist of first medium substrate, middle layer vanadium dioxide resonant layer, second medium substrate and
Top layer vanadium dioxide resonant layer；Each layer vanadium dioxide resonant layer is made of four vanadium dioxide resonant elements, and described four two
The center of vanadium oxide resonant element is disposed below at the two cornerwise 1/4 of the medium substrate sticked, and thickness is 0.2 μ
M, and in each layer diagonal two resonant element size it is identical.
As the further technical solution of the utility model, four vanadium dioxide of the top layer vanadium dioxide resonant layer are humorous
Vibration unit is made of inside and outside two parts, and external resonant element is rectangular ring structure, and internal resonant element is about two
Symmetrical Great Wall shape structure, a length of 23 μm of the outside of the Q-RING of upper left side vanadium dioxide resonant element, 2 μm of ring width, Great Wall shape
A length of 17.5 μm of resonance structure, width are 2 μm, a length of 17 μm of the outside of the Q-RING of upper right side vanadium dioxide resonant element, ring
1 μm wide, a length of 14 μm of Great Wall shape resonance structure, width is 1 μm.
Further, the Great Wall shape resonant element includes the rectangular strip of setting symmetrical above and below, and each rectangular strip is opposite along it
Side there is four rectangular preiections of equidistantly distributed, and the two-end-point weight of outermost two rectangular preiections and rectangular strip
It closes.
Further, four vanadium dioxide resonant elements of the middle layer vanadium dioxide resonant layer are circular piece, left
The radius of top vanadium dioxide resonant element is 20 μm, and the radius of upper right side vanadium dioxide resonant element is 19.5 μm.
Further, the vanadium dioxide resonant element has low-temperature condition and the condition of high temperature, when being in low-temperature condition,
The vanadium dioxide resonant element is in dielectric property, conductivity 0.74S/m, when in the condition of high temperature, the titanium dioxide
Vanadium resonant element is in metallic character, conductivity 150000S/m.
Further, the temperature of the low-temperature condition is lower than 68 DEG C, and the temperature of the condition of high temperature is greater than or equal to 68 DEG C.
Further, the structure of first and second medium substrate is identical, is square plate, side length is 80 μm, with a thickness of 3 μ
M, material are loss-free polyimides.
Further, the bottom reflecting plate is square plate, and its side length is 80 μm, with a thickness of 0.4 μm, material is gold.
The invention adopts the above technical scheme compared with prior art, has following technical effect that
(1) a kind of super wideband and tunable THz wave absorbing device based on vanadium dioxide phase-change material of the utility model, passes through outside
The conversion of vanadium dioxide resonant element metal, medium character is realized in temperature control, realizes wave absorbing device in the dynamic tune of THz wave band with this
It is humorous.
(2) the utility model can realize the absorption to terahertz electromagnetic wave under lesser physical size, only rely upon
Temperature regulation, without changing other parameters.Have the characteristics that flexible design, temperature control are tunable, have a wide range of application, functional.
Detailed description of the invention
Fig. 1 is the perspective view of the utility model.
Fig. 2 is the top view of the utility model.
Fig. 3 is the top view of the middle layer titanium dioxide vanadium layers of the utility model.
Fig. 4 is the side view of the utility model.
Fig. 5 is (3 × 3) array of figure of the structural unit periodic arrangement of the utility model.
Fig. 6 is absorption curve of the utility model under TE mode when electromagnetic wave vertical incidence.
Fig. 7 is absorption curve of the utility model under TM mode when electromagnetic wave vertical incidence.
Appended drawing reference is explained: 1,2,3,4,6,7,10,11- vanadium dioxide resonant element, 5,8- medium substrate, 9- metal are anti-
Penetrate plate
Specific embodiment
Technical solution of the present invention is further elaborated with specific embodiment with reference to the accompanying drawing:
A kind of super wideband and tunable THz wave absorbing device based on vanadium dioxide phase-change material, can pass through external temperature control mode
The state of vanadium dioxide resonant element is regulated and controled, to realize wave absorbing device within the scope of terahertz wave band specific frequency area
Dynamic tuning, the wave absorbing device forms by structural unit periodic arrangement.Its structural unit include underlying metal reflecting plate 9,
Medium substrate 5,8 and vanadium dioxide resonant element 1,2,3,4,6,7,10,11.Its perspective view is as shown in Figure 1, the metal
The material of reflecting plate is gold, and the material of the medium substrate is loss-free polyimides.
The resonant element of the wave absorbing device is made of vanadium dioxide, by ambient temperature control vanadium dioxide resonant element 1,2,
3,4,6,7,10,11 state.Low-temperature condition is state when temperature is lower than 68 DEG C, and vanadium dioxide resonant element is shown at this time
Dielectric property, conductivity 0.74S/m, the condition of high temperature are states when temperature is greater than or equal to 68 DEG C, at this time vanadium dioxide
Resonant element shows as metallic character, conductivity 150000S/m.
A kind of production method of the super wideband and tunable THz wave absorbing device based on vanadium dioxide phase-change material, the wave absorbing device pair
In incident electromagnetic wave be polarization sensitive, when electromagnetic wave vertical incidence, under high temperature, low-temperature condition the difference of assimilation effect be by
Metallic character is presented at high temperature in vanadium dioxide resonant element, is presented caused by dielectric property at low temperature.Two states phase
Compare, when the condition of high temperature, the assimilation effect of the wave absorbing device is more preferable.
The top view of the wave absorbing device is as shown in Fig. 2, the vanadium dioxide resonant element 1,2,3,4,6,7,10,11 is set to
On medium substrate, the center of four resonant elements of each vanadium dioxide resonant layer is located at medium substrate two cornerwise 1/4.Its
In 1,4 resonant elements it is equal sized, 2,3 resonant cell dimensions are identical, equal sized, 7, the 10 resonance lists of 6,11 resonant elements
Elemental size is identical, and thickness is 0.2 μm.Four vanadium dioxide resonant elements of the top layer consist of two parts, and outer layer is
Rectangular ring structure, the outer side length l of the outer layer Q-RING of resonant element 11It is 23 μm, ring width m1It is 2 μm, the outer layer side of resonant element 2
The outer side length l of shape ring4It is 17 μm, ring width m2It is 1 μm.The resonant element of inner layer is two " Great Wall " shape structures symmetrical above and below, humorous
The long l of inner layer " Great Wall " shape resonant element of vibration unit 12It is 17.5 μm, wide m1It is 2 μm, the wide m of small rectangle thereon1It is 2 μm,
The spacing l of long and adjacent small rectangle3It is 2.5 μm, the distance between two " Great Wall " shape resonant elements h1It is 8 μm, resonance
The long l of inner layer " Great Wall " shape resonant element of unit 25It is 14 μm, wide m2It is 1 μm, the wide m of small rectangle thereon2Be 1 μm, it is long with
And the spacing l of adjacent small rectangle6It is 2 μm, the distance between two " Great Wall " shape resonant elements h2It is 6 μm.Relevant parameter is such as
Shown in table 1.
| Parameter | d | h | h1 | h2 | l1 | l2 | l3 | l4 |
| It is worth (μm) | 0.4 | 0.2 | 8 | 6 | 23 | 17.5 | 2.5 | 17 |
| Parameter | l5 | l6 | l7 | l8 | m1 | m2 | p | t |
| It is worth (μm) | 14 | 2 | 40 | 39 | 2 | 1 | 80 | 3 |
Table 1
The material of the metallic reflection plate of the wave absorbing device is gold, and relevant parameter is as shown in table 1.
The material of the medium substrate of the wave absorbing device is loss-free polyimides, and relevant parameter is as shown in table 1.
It as shown in Figure 6,7, is absorption curve of the wave absorbing device work under TE, TM mode, since the wave absorbing device is for entering
The electromagnetic wave penetrated is polarization sensitive, and the absorption curve of two kinds of temperature as described below is the absorption curve obtained under TE mode,
Electromagnetic wave is incident along the direction-z when work.Reflectivity, T are indicated by absorptivity formula A (ω)=1-R (ω)-T (ω), R (ω)
(ω) expression transmissivity is since bottom is complete metal reflecting plate, so T (ω)=0, therefore A (ω)=1-R (ω).The condition of high temperature
Under, the reflectivity in frequency band 7.36THz to 16.67THz is lower than -10dB, and absorptivity is higher than 90%, and relative bandwidth is
77.4%.Under low-temperature condition, it is lower than 5.4% in the absorptivity of 0.1-25THz, the wave absorbing device, the loss of incident electromagnetic wave is minimum.
Therefore, we can select working condition according to actual needs, by external temperature control, realize to the wave absorbing device in THz wave band
Dynamic tuning.
After passing through specific design (size and shape of vanadium dioxide resonant element, temperature control), the utility model
The wave absorbing device can be achieved in the dynamic tuning of THz wave band, mainly absorbing all is that the resonant element being made of vanadium dioxide causes,
The absorption to lower frequency electromagnetic wave can be realized under lesser physical size, the utility model has flexible design, temperature control
It is tunable, have a wide range of application, functional the features such as.
The basic principles and main features and advantage of the utility model have been shown and described above.Those skilled in the art
It should be appreciated that the utility model is not limited by above-mentioned specific embodiment, the description in above-mentioned specific embodiment and specification is only
It is in order to further illustrate the principles of the present invention, under the premise of not departing from the spirit of the present invention range, this is practical new
Type will also have various changes and improvements, and these various changes and improvements fall within the scope of the claimed invention.This is practical
Novel claimed range is by claims and its equivalent thereof.
Claims (8)
1. a kind of super wideband and tunable THz wave absorbing device based on vanadium dioxide phase-change material, it is characterised in that: reflected including bottom
Plate is provided with four layers of structural unit stacked gradually on the bottom reflecting plate, and the structural unit sequentially consists of
One medium substrate, middle layer vanadium dioxide resonant layer, second medium substrate and top layer vanadium dioxide resonant layer；Each layer vanadium dioxide
Resonant layer is made of four vanadium dioxide resonant elements, and the center of four vanadium dioxide resonant elements is disposed below patch
At the two of deposited medium substrate cornerwise 1/4, thickness is 0.2 μm, and in each layer diagonal two resonant element size phase
Together.
2. the super wideband and tunable THz wave absorbing device according to claim 1 based on vanadium dioxide phase-change material, feature exist
In: four vanadium dioxide resonant elements of the top layer vanadium dioxide resonant layer are made of inside and outside two parts, external resonance
Unit is rectangular ring structure, and internal resonant element is two Great Wall shape structures symmetrical above and below, upper left side vanadium dioxide resonance
A length of 23 μm of the outside of the Q-RING of unit, 2 μm of ring width, Great Wall
A length of 17.5 μm of shape resonance structure, width are 2 μm, and the outside of the Q-RING of upper right side vanadium dioxide resonant element is a length of
17 μm, 1 μm of ring width, a length of 14 μm of Great Wall shape resonance structure, width is 1 μm.
3. the super wideband and tunable THz wave absorbing device according to claim 2 based on vanadium dioxide phase-change material, feature exist
In: the Great Wall shape structure includes the rectangular strip of setting symmetrical above and below, and each rectangular strip has equidistant point along its opposite side
Four rectangular preiections of cloth, and outermost two rectangular preiections are overlapped with the two-end-point of rectangular strip.
4. the super wideband and tunable THz wave absorbing device according to claim 1 based on vanadium dioxide phase-change material, feature exist
In: four vanadium dioxide resonant elements of the middle layer vanadium dioxide resonant layer are circular piece, and upper left side vanadium dioxide is humorous
The radius of vibration unit is 20 μm, and the radius of upper right side vanadium dioxide resonant element is 19.5 μm.
5. the super wideband and tunable THz wave absorbing device according to claim 1 based on vanadium dioxide phase-change material, feature exist
In: the vanadium dioxide resonant element has low-temperature condition and the condition of high temperature, and when being in low-temperature condition, the vanadium dioxide is humorous
The unit that shakes is in dielectric property, and conductivity is 0.74 S/m, and when being in the condition of high temperature, the vanadium dioxide resonant element is in gold
Belong to characteristic, conductivity is 150000 S/m.
6. the super wideband and tunable THz wave absorbing device according to claim 5 based on vanadium dioxide phase-change material, feature exist
In: the temperature of the low-temperature condition is lower than 68 DEG C, and the temperature of the condition of high temperature is greater than or equal to 68 DEG C.
7. the super wideband and tunable THz wave absorbing device according to claim 1 based on vanadium dioxide phase-change material, feature exist
In: the structure of first and second medium substrate is identical, is square plate, and side length is 80 μm, and with a thickness of 3 μm, material is lossless
The polyimides of consumption.
8. the super wideband and tunable THz wave absorbing device according to claim 1 based on vanadium dioxide phase-change material, feature exist
In: the bottom reflecting plate is square plate, and its side length is 80 μm, with a thickness of 0.4 μm, material is gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821446265.4U CN209045776U (en) | 2018-09-04 | 2018-09-04 | A kind of super wideband and tunable THz wave absorbing device based on vanadium dioxide phase-change material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821446265.4U CN209045776U (en) | 2018-09-04 | 2018-09-04 | A kind of super wideband and tunable THz wave absorbing device based on vanadium dioxide phase-change material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209045776U true CN209045776U (en) | 2019-06-28 |
Family
ID=67032394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821446265.4U Active CN209045776U (en) | 2018-09-04 | 2018-09-04 | A kind of super wideband and tunable THz wave absorbing device based on vanadium dioxide phase-change material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209045776U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112684648A (en) * | 2020-11-27 | 2021-04-20 | 四川大学 | Broadband adjustable absorber based on vanadium dioxide and Fabry-Perot cavity |
| CN113381193A (en) * | 2020-03-10 | 2021-09-10 | 哈尔滨工业大学 | Liquid crystal reconfigurable frequency selective surface |
| CN114069246A (en) * | 2021-12-02 | 2022-02-18 | 四川大学 | Rectification surface for absorbing electromagnetic waves based on periodic structure |
-
2018
- 2018-09-04 CN CN201821446265.4U patent/CN209045776U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113381193A (en) * | 2020-03-10 | 2021-09-10 | 哈尔滨工业大学 | Liquid crystal reconfigurable frequency selective surface |
| CN113381193B (en) * | 2020-03-10 | 2022-06-14 | 哈尔滨工业大学 | Liquid crystal reconfigurable frequency selective surface |
| CN112684648A (en) * | 2020-11-27 | 2021-04-20 | 四川大学 | Broadband adjustable absorber based on vanadium dioxide and Fabry-Perot cavity |
| CN114069246A (en) * | 2021-12-02 | 2022-02-18 | 四川大学 | Rectification surface for absorbing electromagnetic waves based on periodic structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN209045776U (en) | A kind of super wideband and tunable THz wave absorbing device based on vanadium dioxide phase-change material | |
| CN208674378U (en) | A kind of THz super wideband and tunable wave absorbing device based on phase-change material | |
| CN210535829U (en) | Annular metamaterial wave absorber based on multilayer structure | |
| Liu et al. | Ultra-broadband terahertz absorber based on a multilayer graphene metamaterial | |
| CN208690497U (en) | A kind of super surface of controllable circular polarisation in graphene broadband | |
| Bakshi et al. | A compact design of multiband terahertz metamaterial absorber with frequency and polarization tunability | |
| CN211265718U (en) | VO-based2Super-surface dual-function device for realizing polarization conversion and wave absorption | |
| CN209056607U (en) | A kind of electromagnetism Meta Materials wave absorbing device based on vanadium dioxide phase transformation regulation | |
| CN112882259B (en) | Vanadium dioxide-based adjustable reflection-type terahertz polarization converter | |
| Ling et al. | Tunable terahertz metamaterial absorber and the sensing application | |
| CN210182581U (en) | Single-layer THz broadband wave absorber based on vanadium dioxide regulation | |
| CN209418771U (en) | A kind of broadband electromagnetical Meta Materials wave absorbing device based on multilayered structure | |
| CN107834209A (en) | A kind of wide angle polarizes insensitive Terahertz three with absorber | |
| CN109193169A (en) | A kind of Terahertz polarization converter based on split ring resonator | |
| CN110265790B (en) | Broadband terahertz quarter-wave plate based on H-shaped structure | |
| CN106450794A (en) | Chiral super-surface terahertz reflective 90-degree polarizer | |
| CN111446551A (en) | Multi-band adjustable terahertz wave absorber based on graphene super-surface | |
| CN111525272B (en) | Broadband terahertz wave absorber based on three-dart-shaped graphene | |
| CN112350071A (en) | Reflective terahertz polarization converter | |
| CN112684648A (en) | Broadband adjustable absorber based on vanadium dioxide and Fabry-Perot cavity | |
| CN209183748U (en) | A kind of double circular ring shape phase-change material ultra wide band THz wave absorbing devices | |
| Dong et al. | Conformal transparent metamaterials inducing ultra-broadband absorption and polarization conversion | |
| Chao et al. | A new design of ultra-thin wide stop-band metamaterial filter for terahertz waves | |
| CN209183747U (en) | One kind being based on coplanar structure wideband adjustable THz wave absorbing device | |
| Ri et al. | Dual-broadband Terahertz metamaterial absorber using a single asymmetric resonator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |