CN108767492B - Adjustable terahertz broadband wave absorber - Google Patents
Adjustable terahertz broadband wave absorber Download PDFInfo
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- CN108767492B CN108767492B CN201810377846.5A CN201810377846A CN108767492B CN 108767492 B CN108767492 B CN 108767492B CN 201810377846 A CN201810377846 A CN 201810377846A CN 108767492 B CN108767492 B CN 108767492B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
Abstract
The invention discloses an adjustable terahertz broadband wave absorber, which comprises: a plurality of periodic units; a plurality of periodic units are arranged periodically; the periodic unit is a multilayer structure and comprises: the metal patch comprises a patch layer, a dielectric layer and a vanadium dioxide thin film layer, wherein the dielectric layer is located between the patch layer and the vanadium dioxide thin film layer, and a plurality of metal patches arranged on the dielectric layer form the patch layer. The adjustable terahertz broadband wave absorber provided by the invention provides a wave absorber structure based on vanadium dioxide, and can realize strong broadband absorption of terahertz waves; the dynamic adjustability of the absorption performance can be realized by utilizing the temperature control characteristic of the vanadium dioxide; the performance of the wave absorber is insensitive to the position of the metal patch, the requirement on processing production is reduced, and the wave absorber has stronger practicability; the structure is simple, and the device can be applied to electromagnetic wave absorption of far infrared, middle infrared and other frequency bands through scale conversion.
Description
Technical Field
The invention relates to the technical field of terahertz wave absorption, in particular to an adjustable terahertz broadband wave absorber.
Background
Terahertz waves Terahertz (THz) generally refer to electromagnetic waves with a frequency range of 0.3-10 THz, and are special areas of transition from electronics to photonics on the electromagnetic spectrum. The terahertz wave has the characteristics of microwave and light wave, has unique transient property, low energy, high penetrability and anti-interference capability, and has wide application prospect in multiple fields of wireless communication, biomedicine, imaging, sensing and the like. But due to the lack of an effective terahertz source and detector, conventional materials in nature are difficult to apply to this frequency band. In order to improve the precision and the sensitivity of the terahertz detection device, the research on the terahertz wave band wave-absorbing material is particularly important.
The wave-absorbing material is a material which can convert electromagnetic waves incident on the surface of the material into heat energy or energy in other forms, and can reduce the transmission and reflection of the electromagnetic waves, thereby realizing the absorption of the electromagnetic waves. In recent years, researches related to terahertz wave absorbers based on metamaterials have attracted much attention. The metamaterial is a composite material which is designed manually, has strong structural dependence, and can be customized by people, and the required electromagnetic property can be realized by changing the structure of the metamaterial. Compared with the traditional wave-absorbing material, the metamaterial wave-absorbing device has the advantages of strong absorption, thin thickness, light weight, designable electromagnetic parameters and the like, and has potential application in the fields of nondestructive testing, terahertz imaging, stealth technology and the like. In general, the metamaterial wave absorber has a fixed absorption frequency band and amplitude, and the geometric parameters of the metamaterial wave absorber must be changed if the performance of the metamaterial wave absorber is adjusted, which is difficult to realize for a processed structure. The adjustable metamaterial wave absorber is a new research direction in recent years, namely the electromagnetic characteristic of the wave absorber is changed by utilizing the adjustable property of the composition material without changing the structure of the wave absorber, the adjustable metamaterial wave absorber can realize the functions of adjustable frequency, free switching and the like on the basis of the original structure, and has stronger practicability. Research shows that most of structures of the terahertz metamaterial wave absorber proposed at present are not adjustable, and for an adjustable structure, many designs are too complex, such as a spiral structure, a multilayer structure and the like are used, or the structure does not have symmetry, so that the absorption effect can be realized only in one polarization mode. Therefore, a novel tunable terahertz broadband wave absorber with a simple structure is needed.
Disclosure of Invention
In view of the above, one technical problem to be solved by the present invention is to provide an adjustable terahertz broadband wave absorber.
According to an aspect of the present invention, there is provided a tunable terahertz broadband wave absorber, including: a plurality of periodic units, the plurality of periodic units being periodically arranged; the periodic unit is a multilayer structure including: the metal patch comprises a patch layer, a dielectric layer and a vanadium dioxide thin film layer, wherein the dielectric layer is located between the patch layer and the vanadium dioxide thin film layer, and a plurality of metal patches arranged on the dielectric layer form the patch layer.
Optionally, the shape of the metal patch comprises: circular, rectangular or diamond shaped; wherein the diameter or the length of the maximum side length of the metal patch is 50-1000 μm; the metal patch is made of the following materials: gold, silver, aluminum, titanium.
Optionally, the position distribution of the metal patches on the patch layer includes: uniformly distributed and randomly distributed.
Optionally, the thickness of the patch layer is 0.1-0.5 μm; the thickness of the dielectric layer is 10-100 μm; the thickness of the vanadium dioxide thin film layer is 0.1-0.5 μm.
Optionally, the vanadium dioxide thin film layer is fixed on a substrate, and the substrate is made of: silicon, quartz; the thickness of the substrate is 300 mu m-1 mm.
Optionally, a vanadium dioxide thin film is plated on the substrate to form the vanadium dioxide thin film layer; forming a dielectric layer on the vanadium dioxide thin film layer; and forming a metal layer on the dielectric layer, and removing redundant metal parts in the metal layer by using a laser or photoetching technology according to the shape, the number and the periodicity of the preset metal patches to form the patch layer.
Optionally, when the electromagnetic wave is vertically incident to the surface of the wave absorber, if the environmental temperature is higher than the phase transition temperature, the vanadium dioxide thin film layer exhibits a metalloid characteristic and absorbs the electromagnetic wave; and if the ambient temperature is lower than the phase transition temperature, the vanadium dioxide thin film layer has the characteristic of an insulator, and the electromagnetic waves pass through the vanadium dioxide thin film layer.
Optionally, the periodic unit is square, and the length of the side of the periodic unit is 1000-.
Optionally, the plurality of periodic units are arranged in a two-dimensional periodic manner on the same plane along the transverse direction and the longitudinal direction respectively.
Optionally, the material of the dielectric layer includes: an organic high molecular polymer.
The invention discloses an adjustable terahertz broadband wave absorber, which comprises a plurality of periodic units which are periodically arranged, wherein each periodic unit comprises: the metal patch comprises a patch layer, a dielectric layer and a vanadium dioxide thin film layer, wherein the dielectric layer is positioned between the patch layer and the vanadium dioxide thin film layer, and a plurality of metal patches arranged on the dielectric layer form the patch layer; the wave absorber structure based on vanadium dioxide is provided, so that the strong broadband absorption of terahertz waves can be realized; the dynamic adjustability of the absorption performance can be realized by utilizing the temperature control characteristic of the vanadium dioxide; the performance of the wave absorber is insensitive to the position of the metal patch, the requirement on processing production is reduced, and the wave absorber has stronger practicability; the structure is simple; the method can be applied to the absorption of electromagnetic waves in other frequency bands such as far infrared band, middle infrared band and the like through scale conversion.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1a is a schematic diagram of a periodic unit in one embodiment of the tunable terahertz broadband wave absorber of the present invention;
FIG. 1b is a schematic structural diagram of an embodiment of the tunable terahertz broadband wave absorber of the present invention;
FIG. 2 is a schematic diagram of the absorption rate of a plane wave incident along the z-axis at the temperature of 69 ℃ and 60 ℃ according to the tunable terahertz broadband wave absorber of the present invention;
fig. 3a is a top view of a first structure of randomly distributed periodic units when 5 metal patches are provided for the tunable terahertz broadband wave absorber of the present invention;
fig. 3b is a top view of a second structure of the randomly distributed periodic units when 5 metal patches are provided for the tunable terahertz broadband wave absorber of the present invention;
fig. 3c is a top view of a third structure of the randomly distributed periodic units when 5 metal patches are provided for the tunable terahertz broadband wave absorber of the present invention;
fig. 4a is a schematic diagram of absorption rate of x-polarized plane waves incident to a random distribution structure along a z-axis in a forward direction when 5 metal patches of the tunable terahertz broadband wave absorber are provided;
fig. 4b is a schematic diagram of the absorption rate of a y-polarized plane wave incident to a random distribution structure along the z-axis in the forward direction when 5 metal patches of the tunable terahertz broadband wave absorber are provided;
fig. 5a is a structural top view of the randomly distributed periodic units when 6 metal patches are provided for the tunable terahertz broadband wave absorber of the present invention;
fig. 5b is a top view of a structure of randomly distributed periodic units when 8 metal patches are provided for the tunable terahertz broadband wave absorber of the present invention;
fig. 5c is a top view of a structure of randomly distributed periodic units when 13 metal patches are provided for the tunable terahertz broadband wave absorber of the present invention;
fig. 6a is a schematic diagram of an absorption curve when x-polarized plane waves are incident to a randomly distributed structure along a z-axis in a forward direction when 6, 8, or 13 metal patches of the tunable terahertz broadband wave absorber of the present invention are provided;
fig. 6b is a schematic diagram of an absorption curve when y-polarized plane waves are incident to a random distribution structure along the z-axis in the forward direction when the number of metal patches of the tunable terahertz broadband wave absorber is 6, 8, or 13.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail, but are intended to be part of the specification where appropriate.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
The embodiment can be widely applied to terahertz broadband communication, and provides important theoretical and technical guidance for the development and application of terahertz functional devices.
As shown in fig. 1a and 1b, the present invention provides a tunable terahertz broadband wave absorber, comprising: and the plurality of periodic units are arranged periodically. The periodic unit is a multilayer structure, and the multilayer structure includes: the chip layer, the dielectric layer 2 and the vanadium dioxide thin film layer 3. The dielectric layer 2 is located between the patch layer and the vanadium dioxide thin film layer 3, wherein the plurality of metal patches 1 arranged on the dielectric layer form the patch layer.
The material of the dielectric layer 2 includes organic high molecular polymer, etc., and the organic high molecular polymer may be various existing organic high molecular polymers. The shape of the metal patch 1 may be circular, rectangular (rectangle or square), rhombus, etc., and the diameter or the maximum side length of the metal patch 1 is 50 to 1000 μm, for example, when the metal patch 1 is rectangular, the maximum side length of the rectangle is 50 to 1000 μm. The metal patch 1 is made of a good conductor such as gold, silver, aluminum, titanium, or the like. The metal patches 1 may be uniformly distributed, randomly distributed, etc. on the patch layer 2. The periodic unit can be square, and the length of the side of the periodic unit is 1000-2000 μm. The periodic units are respectively arranged in a two-dimensional periodic manner along the transverse direction and the longitudinal direction on the same plane to form the wave absorber.
The vanadium dioxide thin film layer 3 is made of vanadium dioxide which is a good adjustable material, phase change from an insulator state to a metal state can be realized under the condition of thermal excitation, and reversible mutation occurs to optical, electric and magnetic properties before and after the phase change. During the temperature rise, the phase transition temperature of the vanadium dioxide is about 68 ℃, and the conductivity of the vanadium dioxide can change greatly around the temperature, so that the adjustable characteristic can be realized by changing the external temperature. The thickness of the patch layer, namely the metal patch 1, is 0.1-0.5 μm. The thickness of the dielectric layer 2 is 10-100 μm. The thickness of the vanadium dioxide thin film layer 3 is 0.1-0.5 μm.
In one embodiment, the vanadium dioxide thin film layer 3 is fixed on a substrate, and the material of the substrate comprises silicon, quartz and the like. The substrate is plated with a vanadium dioxide film to form a vanadium dioxide film layer 3. And forming a dielectric layer 2 on the vanadium dioxide thin film layer 3. And forming a metal layer on the dielectric layer 2, and removing redundant metal parts in the metal layer by a laser or photoetching technology according to the shape, the number and the periodicity of the preset metal patches 1 to form a patch layer.
The vanadium dioxide thin film layer 3 is thin and is generally required to be fixed on a substrate, the substrate is made of silicon or quartz, the size of the substrate is the same as the actual size of the wave absorber, and the thickness of the substrate is generally in the range of 300 mu m-1 mm. In actual processing, a vanadium dioxide film is usually plated on a substrate, and then a dielectric layer and a metal layer are formed by adopting a chemical or physical method; and removing redundant metal parts by photoetching or electronic book exposure technology according to the designed patch shape, number and periodicity to form a patch layer.
In one embodiment, when the electromagnetic wave is vertically incident to the surface of the wave absorber, if the environmental temperature is higher than the phase transition temperature, the vanadium dioxide thin film layer has the metalloid property and absorbs the electromagnetic wave; and if the ambient temperature is lower than the phase transition temperature, the vanadium dioxide thin film layer has the characteristic of an insulator, and the electromagnetic waves pass through the vanadium dioxide thin film layer.
For example, an xyz coordinate system is created, the periodic elements of the absorber being periodically arranged in the xy-plane, the z-axis being perpendicular to the absorber surface. When the plane electromagnetic wave vertically enters the surface of the wave absorber along the z axis, the wave absorber surface and the free space realize impedance matching in the working frequency band due to the resonance effect of the metamaterial, and the reflection is nearly zero.
When the environmental temperature is higher than the phase transition temperature by 68 ℃, the vanadium dioxide film has the property of metalloid, the transmission is nearly zero, and most of the electromagnetic waves are consumed in the absorber structure, so that the absorption effect is realized. When the ambient temperature is 68 ℃ lower than the phase transition temperature, the vanadium dioxide film exhibits the characteristics of an insulator, at which the electromagnetic wave is almost completely transmitted, thereby achieving the "off" of the absorption performance. The absorption performance of the wave absorber is insensitive to the position of the metal patch 1, and under the condition that the number of the patches is not changed, the position distribution of the patches is randomly changed, so that the wave absorber has similar absorption performance.
The adjustable terahertz wave absorber in the embodiment is an adjustable terahertz wave absorber based on vanadium dioxide, and the basic units have a three-dimensional periodic structure, are sequentially provided with a patch layer, a dielectric layer and a vanadium dioxide thin film layer from top to bottom, and are formed by periodically arranging a plurality of basic units on the same plane along the transverse direction and the longitudinal direction.
In one embodiment, as shown in fig. 1a, the model period of the tunable terahertz wave absorber is represented by P, i.e., the side length of the upper surface of the periodic unit. The patch layer is made of gold and has a thickness t1. If the patch shape is circular, the diameter can be expressed by 2r, and the horizontal and longitudinal distances of the adjacent patches are d; the dielectric layer is made of polyimide with dielectric constant of 3.1, loss tangent of 0.01 and thickness t2. The thickness of the vanadium dioxide film is t3When the temperature is 69 ℃, the conductivity of the alloy is 1.58 multiplied by 105S/m, and when the temperature is 60 ℃, the electric conductivity of the material is 820S/m. For example, P1265 μm, t1＝0.2μm，t2＝35μm，t3＝0.2μm，d＝220μm，r＝120.175μm。
As shown in fig. 1b, 5 × 5 periodic units are selected and arranged in an xy plane along a two-dimensional period in the transverse direction and the longitudinal direction to form the adjustable terahertz wave absorber. The absorption rate profile of the absorber at normal incidence of the plane wave along the z-axis can be obtained using the electromagnetic simulation software CST MWS, as shown in fig. 2. As can be seen from fig. 2, when the temperature is 69 ℃ (solid line), the present embodiment has a strong absorption characteristic for vertically incident terahertz waves, the bandwidth with the absorption rate greater than 70% reaches 0.67THz, and the relative bandwidth is about 55%.
Because the structure of the absorber is symmetrical along the diagonal, the absorber has the same performance under the two polarization modes of x and y, and has the characteristic of insensitive polarization. The electrical conductivity of the vanadium dioxide film can be changed by changing the temperature, and the adjustment of the absorption rate can be further realized. At a temperature of 60 ℃ (dashed line), the absorption rate of the present embodiment is controlled below 30% in the working frequency band, thereby realizing the 'off' of the absorption performance.
The absorption performance of the absorber is not sensitive to the position of the metal patch: when the number of the metal patches is kept unchanged, the positions of the metal patches are randomly changed, and the general trend of the absorption performance of the wave absorber is kept unchanged. For example, as shown in fig. 3a, 3b, and 3c, which show top views of three randomly distributed periodic unit structures when the number of metal patches is 5, when plane waves with x-polarization and y-polarization are incident along the z-axis in the forward direction, the absorption curves are shown in fig. 4a and 4b, respectively. It is clear that the absorption properties of the three structures are approximately the same, with good performance in both x and y polarization modes, demonstrating the insensitivity of the structures to the metal patch position.
The number of metal patches will also affect the absorption performance, for example, fig. 5a, 5b, and 5c show top views of the periodic unit structures randomly distributed when the number of metal patches is 6, 8, and 13, respectively. When the x-polarized and y-polarized plane waves are incident in the positive direction along the z-axis, their absorption curves are shown in fig. 6a and 6b, respectively. In general, the absorber structure can realize different broadband absorption effects, and the number of patches can be selected automatically according to actual needs.
The adjustable terahertz broadband wave absorber provided by the embodiment comprises a plurality of periodic units, wherein the periodic units are arranged periodically; the cycle unit includes: the metal patch comprises a patch layer, a dielectric layer and a vanadium dioxide thin film layer, wherein the dielectric layer is positioned between the patch layer and the vanadium dioxide thin film layer, and a plurality of metal patches arranged on the dielectric layer form the patch layer; the wave absorber structure based on vanadium dioxide can realize strong broadband absorption of terahertz waves, and the relative bandwidth with the terahertz wave absorption rate of more than 70% can reach more than 55% by reasonably setting parameters; the dynamic adjustability of the absorption performance can be realized by utilizing the temperature control characteristic of the vanadium dioxide; the performance of the wave absorber is insensitive to the position of the metal patch, the requirement on processing production is reduced, and the wave absorber has stronger practicability; the structure is simple, the universality is realized, and the device can be applied to electromagnetic wave absorption of other frequency bands such as far infrared band, middle infrared band and the like through scale conversion.
The description of the present invention has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to practitioners skilled in this art. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
Claims (8)
1. An adjustable terahertz broadband wave absorber is characterized by comprising:
a plurality of periodic units, the plurality of periodic units being periodically arranged; the plurality of periodic units are respectively arranged in a two-dimensional period along the transverse direction and the longitudinal direction on the same plane; the periodic unit is a multilayer structure including: the chip mounting layer, the dielectric layer and the vanadium dioxide thin film layer; the dielectric layer is positioned between the patch layer and the vanadium dioxide thin film layer, wherein the patch layer is formed by a plurality of metal patches arranged on the dielectric layer; the position distribution of the metal patch on the patch layer comprises the following steps: and (4) randomly distributing.
2. The wave absorbing device of claim 1,
the shape of the metal patch includes: circular, rectangular or diamond shaped; wherein the diameter or the length of the maximum side length of the metal patch is 50-1000 μm;
the metal patch is made of the following materials: gold, silver, aluminum, titanium.
3. The wave absorbing device of claim 1,
the thickness of the patch layer is 0.1-0.5 μm;
the thickness of the dielectric layer is 10-100 μm;
the thickness of the vanadium dioxide thin film layer is 0.1-0.5 μm.
4. The wave absorbing device of claim 1,
the vanadium dioxide thin film layer is fixed on a substrate, and the substrate is made of the following materials: silicon, quartz;
the thickness of the substrate is 300 mu m-1 mm.
5. The wave absorber of claim 4,
a vanadium dioxide film is plated on the substrate to form the vanadium dioxide film layer; at the place
Forming a dielectric layer on the vanadium dioxide thin film layer; and forming a metal layer on the dielectric layer, and removing redundant metal parts in the metal layer by using a laser or photoetching technology according to the shape, the number and the periodicity of the preset metal patches to form the patch layer.
6. The wave absorbing device of claim 1,
when electromagnetic waves are vertically incident to the surface of the wave absorber, if the environmental temperature is higher than the phase transition temperature, the vanadium dioxide thin film layer has the property of metalloid and absorbs the electromagnetic waves; and if the ambient temperature is lower than the phase transition temperature, the vanadium dioxide thin film layer has the characteristic of an insulator, and the electromagnetic waves pass through the vanadium dioxide thin film layer.
7. The wave absorbing device of claim 1,
the period unit is square, and the length of the side of the period unit is 1000-2000 μm.
8. The wave absorbing device of claim 1,
the material of the dielectric layer comprises: an organic high molecular polymer.
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| CN112689455B (en) * | 2021-03-11 | 2021-07-20 | 四川大学 | Self-adaptive electromagnetic protection structure based on phase-change material |
| CN114918425B (en) * | 2022-06-20 | 2023-07-14 | 杭州电子科技大学富阳电子信息研究院有限公司 | Gold nanorod with broadband adjustable absorption characteristic and preparation method thereof |
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