CN208674379U - A kind of broadband Terahertz wave absorbing device based on electromagnetism Meta Materials - Google Patents
A kind of broadband Terahertz wave absorbing device based on electromagnetism Meta Materials Download PDFInfo
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- CN208674379U CN208674379U CN201821461331.5U CN201821461331U CN208674379U CN 208674379 U CN208674379 U CN 208674379U CN 201821461331 U CN201821461331 U CN 201821461331U CN 208674379 U CN208674379 U CN 208674379U
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- resonant element
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- wave absorbing
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- vanadium dioxide
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Abstract
The broadband Terahertz wave absorbing device based on electromagnetism Meta Materials that the utility model discloses a kind of, medium substrate including bottom reflecting plate and its top, the identical vanadium dioxide resonant element of shape there are four being set above the medium substrate, the vanadium dioxide resonant element is arranged along the quadrangle of medium substrate, and the two vanadium dioxide resonant cell dimensions diagonally arranged are identical, thickness is 1 μm.The utility model utilizes the phase-change characteristic of vanadium dioxide, and the conductivity of vanadium dioxide is controlled by temperature, realizes the dynamic tuning to the wave absorbing device with this.The wave absorbing device have the characteristics that it is easy to process, can temperature control adjusting, flexible design.
Description
Technical field
The utility model relates to a kind of wave absorbing device, especially a kind of broadband Terahertz based on electromagnetism Meta Materials inhales wave
Device belongs to radio communication, THz devices field.
Background technique
Electromagnetism Meta Materials, which refer to, has extraordinary physical characteristic such as negative refraction, inverse more by what engineer's means constructed
The general sub-wavelength structure for strangling effect etc..Using electromagnetism Meta Materials to the wave absorbing device of the loss design of electromagnetic wave, with traditional wave absorbing device
It compares, has many advantages, such as that structure is simple, absorption frequency is adjustable, absorbent properties are good, it is multiple in stealth technology, imaging, radar etc.
Field is applied.
THz wave refers to electromagnetic wave of the frequency between 0.1-10THz, wavelength between microwave and it is infrared between, have
The characteristics such as penetrability is strong, energy is low, signal-to-noise ratio is high.Due to specific position of the THz wave in electromagnetic spectrum and its particularity
Matter, Terahertz wave absorbing device cause the research interest of numerous scholars, and frequency band is narrow, bad adaptability is inhaled as limitation all the time
An important factor for wave device is applied, so that tunable wide-band and wave-absorbing device receives significant attention.Currently, it is main to open up wide band method
Have and increases the modes such as resonant element quantity, multilayer lamination structure, load lamped element, resistor-type coating material.It realizes tunable
Property method be primarily introduced into special material or component, by changing temperature, light intensity, the external conditions such as electric field to wave absorbing device
It can be carried out regulation.Vanadium dioxide is a kind of room temperature phase-change material, and phase transition temperature is 68 DEG C, in the process of insulator to metal
In, conductivity increases rapidly, and the mutation of conductivity is reversible.
Summary of the invention
Technical problem to be solved in the utility model is overcome the deficiencies in the prior art and provides a kind of super based on electromagnetism
The broadband Terahertz wave absorbing device of material converts medium, the metallic state of vanadium dioxide resonant element by external temperature control, thus
Achieve the purpose that wave absorbing device specific frequency area range internal absorption factor regulation.
The utility model uses following technical scheme to solve above-mentioned technical problem: a kind of wideband based on electromagnetism Meta Materials
Band Terahertz wave absorbing device, the medium substrate including bottom reflecting plate and its top set that there are four shapes above the medium substrate
The identical vanadium dioxide resonant element of shape, the vanadium dioxide resonant element are arranged along the quadrangle of medium substrate, and diagonal arrangement
Two vanadium dioxide resonant cell dimensions it is identical, thickness is 1 μm.
As the further technical solution of the utility model, the vanadium dioxide resonant element is the opposite fan of four apex angles
Shape resonant element constitute circular configuration, it is described sector resonant element include 1/4 cirque structure constitute fan-shaped arc side,
The fan-shaped side that one L-shaped structure is constituted, the sector resonant element are equipped with a wide item of rectangle along center line.
Further, in the vanadium dioxide resonant element of upper left side and lower right, the outer diameter of 1/4 cirque structure is 10 μ
M, internal diameter are 8 μm, and L-shaped structure width is 0.75 μm, and rectangular bars width is 3 μm, and the vanadium dioxide of upper right side and lower left is humorous
It shakes in unit, the outer diameter of 1/4 annulus is 13 μm, and internal diameter is 10 μm, and L-shaped structure width is 1 μm, and rectangular bars width is 4 μm.
Further, four fan-shaped resonant elements are centrosymmetric centered on the center of circle.
Further, the center of the vanadium dioxide resonant element is located at two diagonal line 1/4 of medium substrate.
Further, the vanadium dioxide resonant element has two states, low-temperature condition, that is, 68 DEG C of T < and the condition of high temperature
That is T >=68 DEG C;When being in low-temperature condition, the vanadium dioxide resonant element shows as dielectric property, and the vanadium dioxide is humorous
When vibration unit is in the condition of high temperature, metallic character is shown as.
Further, the medium substrate material is the polyimides for having consumption, and side length is 60 μm, with a thickness of 3.5 μm.
Further, the bottom reflecting plate is metallic reflection plate, and material is gold, with a thickness of 0.1 μm.
The utility model compared with the prior art by using the above technical solution, has following technical effect that
(1) the utility model is the broadband Terahertz wave absorbing device based on electromagnetism Meta Materials, by extraneous temperature control to dioxy
The state for changing vanadium resonant element is regulated and controled, and keeps it adjustable in the absorptivity of the specific frequency area range of terahertz wave band, when
When electromagnetic wave incident, tunable absorption spectrum is obtained by temperature regulation.
(2) the utility model can be realized under lesser physical size to the wide band absorption of terahertz electromagnetic wave, have
Popular easy processing, can temperature regulation, the features such as flexible design, functional.
Detailed description of the invention
Fig. 1 is the structural unit figure of the utility model.
Fig. 2 is building block array (3 × 3) figure of the utility model.
Fig. 3 is the structural unit front view of the utility model.
Fig. 4 is the structural unit side view of the utility model.
Fig. 5 is absorption curve of the utility model in TE mode electromagnetic wave vertical incidence.
Fig. 6 is absorption curve of the utility model in TM mode electromagnetic wave vertical incidence.
Appended drawing reference is explained: 1,2,3,4-vanadium dioxide resonant element, 5-medium substrates, 6-metallic reflection plates.
Specific embodiment
The technical solution of the utility model is described in further detail with reference to the accompanying drawing:
A kind of broadband Terahertz wave absorbing device based on electromagnetism Meta Materials, can be by external temperature control mode to vanadium dioxide
The state of resonant element is regulated and controled, thus reach in the adjustable purpose of terahertz wave band specific frequency area range absorptivity,
The wave absorbing device is formed by structural unit periodic arrangement.Its structural unit includes underlying metal reflecting plate 6, medium substrate 5 and two
Vanadium oxide resonant element 1,2,3,4.
The resonant element is made of vanadium dioxide, converts vanadium dioxide resonant element by the control to external temperature
State, in low temperature, that is, 68 DEG C of T <, vanadium dioxide resonant element shows as dielectric property, at this time its conductivity be 0.74s/
M, at high temperature, that is, T >=68 DEG C, vanadium dioxide resonant element shows as metallic character, its conductivity is 150000s/m at this time.
5 material of medium substrate is the polyimides for having consumption.
The metallic reflection plate 6, material are gold.
The production method of the broadband Terahertz wave absorbing device based on electromagnetism Meta Materials, the wave absorbing device is for incidence
Electromagnetic wave is that polarization is insensitive, and when electromagnetic wave vertical incidence, the difference of assimilation effect is due to dioxy under high temperature, low-temperature condition
Change vanadium resonant element metallic character is presented at high temperature, presents at low temperature caused by dielectric property.Two states compare, high
When temperature state, the assimilation effect of the wave absorbing device is more preferable.
The reflecting plate of the wave absorbing device, the reflecting plate used in different frequency range is different, such as in the available full gold of microwave band reflecting surface
Belong to plate, such as copper, aluminium;And in Terahertz and light wave with super band, multilayer dielectricity reflecting plate can be used in reflecting plate, and (such as photon is brilliant
Body) or artificial structure's array with reflection characteristic.
The wave absorbing device, medium substrate can also be the artificial synthesized medium with specific feature, such as be matched by solution
Gel-type (flexibility) medium that the method for ratio obtains, then combined with flexible base board and can be used for conformal realization wideband absorption.
The broadband Terahertz wave absorbing device based on electromagnetism Meta Materials can be realized preferable absorbing property simultaneously, lead to
The mode for crossing temperature control realizes the tunable of absorption frequency.
A kind of broadband Terahertz wave absorbing device based on electromagnetism Meta Materials, is formed by several resonant element periodic arrangements.
Its structural unit is as shown in figure 3, bottom is complete metal plate, for being totally reflected, thickness h1It is 0.1 μm, 5 side length of medium substrate
P is 60 μm, thickness h2It is 3.5 μm, 1,2,3,4 thickness h of vanadium dioxide resonant element3It is 1 μm, shape is identical, is orange
Shape, center are located at two diagonal line 1/4 of medium substrate, and each orange shape resonant element is by four centrosymmetric fan-shaped resonance
Unit is constituted, and the sector resonant element is by a 1/4 annulus resonant element, a L shape structure resonance unit and one
Rectangle resonant element is constituted, and 1/4 annulus and L shape structure surround a fan-shaped closure figure, rectangle resonance list therebetween
Member is by its equal part.As shown in Figure 1, the vanadium dioxide resonant element 1 and 2 diagonally arranged, 3 identical as 4 sizes.Resonant element 1 and 2
In, the outer diameter r of 1/4 annulus resonant element3It is 10 μm, internal diameter r4It is 8 μm, the width c of L shape structure resonance unit is 0.75 μm,
Length f is 9.25 μm, and rectangle resonant element width d is 3 μm, in resonant element 3 and 4, the outer diameter r of 1/4 annulus resonant element1
It is 13 μm, internal diameter r2It is 10 μm, the width a of L shape structure resonance unit is 1 μm, and length e is 12 μm, rectangle resonant element
Width b is 4 μm.Design parameter is shown in Table 1.
Parameter | a | b | c | d | e |
It is worth (μm) | 1 | 4 | 0.75 | 3 | 12 |
Parameter | f | r1 | r2 | r3 | r4 |
It is worth (μm) | 9.25 | 13 | 10 | 10 | 8 |
Parameter | p | h1 | h2 | h3 | |
It is worth (μm) | 60 | 0.1 | 3.5 | 1 |
Table 1
It as shown in Figure 5,6, is absorption curve that the wave absorbing device works under TE, TM mode, two curves essentially coincide, institute
It is that polarization is insensitive for incident electromagnetic wave with the wave absorbing device.Electromagnetic wave is incident along the direction-z when work.By absorptivity public affairs
Formula A (ω)=1-R (ω)-T (ω), R (ω) indicate reflectivity, and T (ω) expression transmissivity is complete metal reflection due to bottom
Plate, so T (ω)=0, therefore A (ω)=1-R (ω).Fig. 5 is the absorption curve of wave absorbing device under TE mode, under the condition of high temperature (T >=
68 DEG C), in frequency 4.29THz to 5.52THz range, the absorptivity of the wave absorbing device 90% or more, distinguish by absorption peak
It is 98.6%, 99.9% and 94.1%, is located at 4.56THz, 5.16THz and 9.12THz.Under low-temperature condition (68 DEG C of T <),
In 0.1THz to 10THz frequency range, absorptivity is lower than 4.2%, and incidence wave loss is minimum.Therefore, we can basis
Actual demand selects working condition, passes through external temperature control, realizes the Modulatory character to the wave absorbing device working frequency.
After particular design (temperature control), the working frequency of the utility model can cover entire THz wave
Section.Main absorb all is that the resonant element being made of vanadium dioxide causes, and can be realized under lesser physical size to lower
The absorption of frequency electromagnetic, the utility model have popular easy processing, can temperature regulation, the features such as flexible design, functional.
The basic principles and main features and advantage of the utility model have been shown and described above.Those skilled in the art
It should be appreciated that the utility model is not limited by above-mentioned specific embodiment, the description in above-mentioned specific embodiment and specification is only
It is in order to further illustrate the principles of the present invention, on the premise of not departing from the spirit and scope of the utility model, this is practical
Novel to will also have various changes and improvements, these various changes and improvements fall within the scope of the claimed invention.This reality
With novel claimed range by claims and its equivalent thereof.
Claims (8)
1. a kind of broadband Terahertz wave absorbing device based on electromagnetism Meta Materials, it is characterised in that: including bottom reflecting plate and thereon
The medium substrate of side, sets that there are four the identical vanadium dioxide resonant element of shape, the titanium dioxides above the medium substrate
Vanadium resonant element is arranged along the quadrangle of medium substrate, and the two vanadium dioxide resonant cell dimensions diagonally arranged are identical, thickness
It is 1 μm.
2. the broadband Terahertz wave absorbing device according to claim 1 based on electromagnetism Meta Materials, it is characterised in that: described two
Vanadium oxide resonant element is the circular configuration that the opposite fan-shaped resonant element of four apex angles is constituted, and the sector resonant element includes
The fan-shaped side that fan-shaped arc side, a L-shaped structure for one 1/4 cirque structure composition is constituted, the sector resonant element edge
Center line is equipped with a wide item of rectangle.
3. the broadband Terahertz wave absorbing device according to claim 2 based on electromagnetism Meta Materials, it is characterised in that: upper left side
And in the vanadium dioxide resonant element of lower right, the outer diameter of 1/4 cirque structure is 10 μm, and internal diameter is 8 μm, L-shaped structure width
It is 0.75 μm, rectangular bars width is 3 μm, and in the vanadium dioxide resonant element of upper right side and lower left, the outer diameter of 1/4 annulus is
13 μm, internal diameter is 10 μm, and L-shaped structure width is 1 μm, and rectangular bars width is 4 μm.
4. the broadband Terahertz wave absorbing device according to claim 2 based on electromagnetism Meta Materials, it is characterised in that: four fans
Shape resonant element is centrosymmetric centered on the center of circle.
5. the broadband Terahertz wave absorbing device according to claim 2 based on electromagnetism Meta Materials, it is characterised in that: described two
The center of vanadium oxide resonant element is located at two diagonal line 1/4 of medium substrate.
6. the broadband Terahertz wave absorbing device according to claim 1 based on electromagnetism Meta Materials, it is characterised in that: described two
Vanadium oxide resonant element has two states, low-temperature condition, that is, 68 DEG C of T < and the condition of high temperature, that is, T >=68 DEG C;
When being in low-temperature condition, the vanadium dioxide resonant element shows as dielectric property, the vanadium dioxide resonant element
When in the condition of high temperature, metallic character is shown as.
7. the broadband Terahertz wave absorbing device according to claim 1 based on electromagnetism Meta Materials, it is characterised in that: given an account of
Matter baseplate material is the polyimides for having consumption, and side length is 60 μm, with a thickness of 3.5 μm.
8. the broadband Terahertz wave absorbing device according to claim 1 based on electromagnetism Meta Materials, it is characterised in that: the bottom
Layer reflecting plate is metallic reflection plate, and material is gold, with a thickness of 0.1 μm.
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CN110911850A (en) * | 2019-11-29 | 2020-03-24 | 中国人民解放军空军工程大学 | Wave-absorbing characteristic regulation and control method for regulating local strain of flexible metamaterial film |
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CN112490686A (en) * | 2020-11-12 | 2021-03-12 | 云南师范大学 | Based on VO2Switch type broadband terahertz wave absorber and absorbing device |
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CN110048199A (en) * | 2019-04-25 | 2019-07-23 | 南京大学 | A kind of integrated VO in part2Terahertz active modulator of material and preparation method thereof |
CN110911850A (en) * | 2019-11-29 | 2020-03-24 | 中国人民解放军空军工程大学 | Wave-absorbing characteristic regulation and control method for regulating local strain of flexible metamaterial film |
CN112003024A (en) * | 2020-07-13 | 2020-11-27 | 清华大学 | Temperature-controlled two-dimensional omnidirectional metal-medium composite stealth device and manufacturing method thereof |
CN112003024B (en) * | 2020-07-13 | 2022-02-18 | 清华大学 | Temperature-controlled two-dimensional omnidirectional metal-medium composite stealth device and manufacturing method thereof |
CN112490686A (en) * | 2020-11-12 | 2021-03-12 | 云南师范大学 | Based on VO2Switch type broadband terahertz wave absorber and absorbing device |
CN112490678A (en) * | 2020-11-12 | 2021-03-12 | 云南师范大学 | VO-based2Broadband terahertz super-surface absorption unit and super-surface absorber |
CN112490686B (en) * | 2020-11-12 | 2024-03-19 | 云南师范大学 | VO-based 2 Switch-type broadband terahertz wave absorber and absorption device |
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CN113013631A (en) * | 2021-02-26 | 2021-06-22 | 成都信息工程大学 | Dual-frequency functional super surface and design method thereof |
CN113437527A (en) * | 2021-07-02 | 2021-09-24 | 浙江工业大学 | All-dielectric tunable electromagnetic induction transparent metamaterial based on quarter-cylinder structure |
CN113437527B (en) * | 2021-07-02 | 2022-06-03 | 浙江工业大学 | All-dielectric tunable electromagnetic induction transparent metamaterial based on quarter-cylinder structure |
CN113782938A (en) * | 2021-09-15 | 2021-12-10 | 哈尔滨学院 | Annular dipole resonance resonator |
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