CN110048199A - A kind of integrated VO in part2Terahertz active modulator of material and preparation method thereof - Google Patents
A kind of integrated VO in part2Terahertz active modulator of material and preparation method thereof Download PDFInfo
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- CN110048199A CN110048199A CN201910337443.2A CN201910337443A CN110048199A CN 110048199 A CN110048199 A CN 110048199A CN 201910337443 A CN201910337443 A CN 201910337443A CN 110048199 A CN110048199 A CN 110048199A
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- 239000000463 material Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 15
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000000737 periodic effect Effects 0.000 claims abstract description 9
- 238000013459 approach Methods 0.000 claims abstract description 4
- 230000001413 cellular effect Effects 0.000 claims abstract description 3
- 238000010276 construction Methods 0.000 claims abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 40
- 238000004528 spin coating Methods 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 238000000411 transmission spectrum Methods 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 238000001259 photo etching Methods 0.000 claims 1
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 abstract description 9
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 abstract description 9
- 229910000314 transition metal oxide Inorganic materials 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 description 8
- 238000013461 design Methods 0.000 description 8
- 238000004611 spectroscopical analysis Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010903 husk Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/008—Manufacturing resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of parts to integrate VO2The Terahertz active modulator of material, including Al2O3Substrate is grown in the Al2O3Part on substrate integrates VO2The metallic resonator structure of structure, the metallic resonator structure include the cellular construction of multiple periodic arrangements.The invention also discloses prepare above-mentioned part to integrate VO2The method and modulator approach of the Terahertz active modulator of material.The configuration of the present invention is simple uses transition metal oxide vanadium dioxide (VO2), the integrated VO in part2The resonator structure of material and metal, device are prepared and are modulated simple and fast.
Description
Technical field
The invention belongs to THz wave transmission technique field, in particular to a kind of part integrates vanadium dioxide (VO2) material
Terahertz active modulator and preparation method thereof.
Background technique
Terahertz Technology was developed rapidly at the past more than 20 years, in high-speed radiocommunication, terahertz imaging and spectroscopy
The application of aspect needs development function complete full of prospect in order to realize the actually active application to Terahertz Technology, meets
The various efficient THz devices of actual demand.Nearest more than ten years, Terahertz active control Meta Materials rapidly develop, a series of super
The Terahertz Meta Materials for leading metal or oxide production, by alternating temperature, magnetic field or optical pumping adjust the tune realized to THz wave
System, but regulation requires high or mode cumbersome mostly, is not easy to be widely applied.
Summary of the invention
In order to solve the above problems existing in the present technology, the present invention provides a kind of parts to integrate VO2The terahertz of material
Hereby active modulator and preparation method thereof, design Terahertz active modulator structure reduce modulation demand, realize and believe Terahertz
Number transmission freely regulate and control.
For achieving the above object, the first technical solution provided by the invention are as follows:
A kind of integrated VO in part2The Terahertz active modulator of material, including Al2O3Substrate is grown in the Al2O3Substrate
On part integrate VO2The metallic resonator structure of structure, the metallic resonator structure include the unit of multiple periodic arrangements
Structure.
Second of technical solution provided by the invention are as follows:
A kind of part integrates VO as described above2The preparation method of the Terahertz active modulator of material, includes the following steps:
(1) in Al2O3VO is grown on substrate2Film；(2) spin coating photoresist AZ1500: VO is being grown2The Al of film2O3Substrate
On, spin coating photoresist AZ1500；(3) Al for coating photoresist AZ1500 uv-exposure and development: is placed on litho machine2O3Base
Piece and mask plate are simultaneously aligned, and the structure of the mask plate is periodic structure, have been exposed followed by be shown with developer for positive photoresist
Shadow dries after then carrying out；(4) VO is etched using reactive ion etching (RIE) technique2Structure, acetone clean photoresist
AZ1500 is dried after the cleaning of alcohol deionized water；(5) two layer photoresist LOR10b and AZ1500 of spin coating；It repeats step (3), this
When mask plate patterns be golden structure graph；(6) magnetron sputtering apparatus, the Al after step (5) sputtering metal membrane: are used2O3Substrate
One layer of metal of upper sputtering, will sputter the Al of one layer of metal2O3Substrate removing removes on remaining photoresist and the photoresist
Then one layer of metal removes remaining photoresist and obtains the resonator structure of periodic arrangement.
The third technical solution provided by the invention are as follows:
VO is integrated using a kind of part as described above2The modulator approach of the Terahertz active modulator of material, including
Following 3 kinds of modulation means:
1) temperature regulates and controls: the part is integrated VO2The Terahertz active modulator of material is fixed on controllable temperature specimen holder,
It is placed in test terahertz time-domain spectroscopy system, modulation Terahertz transmission spectrum is heated by thermal station；
2) part strong THz electric field regulation: is integrated into VO2The Terahertz active modulator of material is fixed on high field terahertz
Hereby at the Terahertz hot spot convergence in time-domain spectroscopy system, the Terahertz active modulator is got to using the change of Terahertz wiregrating
Terahertz electric field level modulation Terahertz transmission spectrum；
3) laser pump (ing) regulates and controls: the part is integrated VO2The Terahertz active modulator of material is fixed on test with too
In hertz time-domain spectroscopy system, modulation Terahertz transmission on the Terahertz active modulator is got to using femtosecond laser
Spectrum.
The invention has the benefit that
The configuration of the present invention is simple uses transition metal oxide vanadium dioxide (VO2), the integrated VO in part2Material and metal
Resonator structure, device are prepared and are modulated simple and fast.
Detailed description of the invention
Fig. 1 is the integrated VO in part2The cellular construction schematic diagram of the Terahertz active modulator of material；
Fig. 2 is the integrated VO in part2The section structural schematic diagram of the Terahertz active modulator of material；
Fig. 3 is the biography of the test sample temperature modulation for the Terahertz active modulator that part of the invention integrates VO2 material
Defeated spectrogram.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate
Use scope of the invention rather than that limitation is of the invention, after the present invention has been read, those skilled in the art are to the present invention
The modifications of various equivalent forms fall within the application range as defined in the appended claims.
One, the integrated VO in design part2The Terahertz active modulator of material
For the integrated VO in design part2The structure of the Terahertz active modulator of material, has studied various Meta Materials
Structure.Most Terahertz Meta Materials modulation requires high, VO2Material can undergo phase transition near room temperature and generate precipitous weigh
Multiple insulated metal phase transformation is to realize the good functional material of active control Meta Materials device.While in order to obtain more tune
Freely, we devise a kind of integrated VO in part for control2The Terahertz active modulator structure of material, schematic diagram was as shown in Figure 1, should
The overall structure of modulator is Al2O3+VO2+ Au, in VO2When material electric conductivity is low, resonance is given in 0.704THz in resonance peak position
Device heating leads to VO2Structural material phase transformation, conductivity increase considerably, and resonance peak is offset to 0.476THz.
For the design parameter for determining the structure, a large amount of moulds first are carried out with the electromagnetism farm software CST based on time-domain integration algorithm
Quasi- emulation, finally determines best design parameter according to transmission characteristic, as depicted in figs. 1 and 2.
Two, based on the integrated VO in part2The Terahertz active modulator processing and fabricating of material
Actual fabrication is carried out according to the Terahertz modulator structure parameter that such as Fig. 1 and Fig. 2 is simulated, uses L-edit software first
The structure of Fig. 1 is drawn into mask plate file, then is made into mask plate.Then the specific steps process of sample making is as follows:
(1) in Al2O3VO is grown on substrate2Film
(2) spin coating photoresist AZ1500
(the Al on substrate2O3+VO2), spin coating 1 layer photoresist Z1500, pre- revolving speed 600rpm, stabilized (steady-state) speed 4000rpm, in advance
The time of revolving speed and stabilized (steady-state) speed is respectively 6 seconds and 40 seconds, and baking temperature is 90 DEG C, and the time is 5 minutes.
(3) uv-exposure and development
The substrate for coating photoresist and mask plate (MASK) are placed on litho machine and are aligned, mask plate structure VO2Week
Phase structure.Time for exposure is 18 seconds, has been exposed followed by be developed with developer for positive photoresist, and developing time is 17 seconds, then
It is dried after progress, baking temperature is 90 DEG C, and the time is 10 minutes.
(4) VO is etched2
The part VO for needing to leave after development2Material is photo-etched glue AZ1500 covering, uses reactive ion etching (RIE) work
Skill carves VO2Structure, etching condition are as follows: etching gas CF4, flow 40sccm, and etching process pressure is 3Pa, radio frequency source function
Rate is 100W, etch period 3min.It is cleaned after the completion of etching, acetone removes photoresist, is cleaned afterwards using alcohol deionized water, 90
Degree drying.
(5) two layer photoresist LOR10b and AZ1500 of spin coating
In step (4) afterwards sample, first spin coating one layer photoresist LOR10B, pre- revolving speed 600rpm, stabilized (steady-state) speed
The time of 4000rpm, pre- revolving speed and stabilized (steady-state) speed is respectively 6 seconds and 40 seconds, and baking temperature is 150 DEG C, and the time is 5 minutes, then
The time of the second layer photoresist of spin coating AZ1500, pre- revolving speed 600rpm, stabilized (steady-state) speed 4000rpm, pre- revolving speed and stabilized (steady-state) speed point
Wei not be 6 seconds and 40 seconds, baking temperature is 90 DEG C, and the time is 5 minutes.
(6) uv-exposure and the development of step (3) are repeated, mask plate structure at this moment is metal periodic structure, and is needed
VO before alignment2Structure carries out alignment, and the time for exposure 18 seconds, developing time was 14 seconds.
(7) on the photoresist AZ1500 and substrate one layer of 200nm thickness of magnetron sputtering golden film, then one layer will have been sputtered
The substrate of golden film is immersed in one on the remaining photoresist AZ1500 and photoresist AZ1500 of removing removal in acetone soln
Layer golden film, then removes remaining photoresist LOR10b with developer solution.
By procedure above, so that it may obtain the integrated VO in part as depicted in figs. 1 and 22The Terahertz of material is actively modulated
Device.
Three, the integrated VO in part2The Terahertz active modulators modulate method of material
(1) temperature regulates and controls: the part is integrated VO2The Terahertz active modulator of material is fixed on controllable temperature sample
Frame is placed in test terahertz time-domain spectroscopy system, heats modulation Terahertz transmission spectrum by thermal station；
(2) part strong THz electric field regulation: is integrated into VO2The Terahertz active modulator of material is fixed on high field too
At Terahertz hot spot convergence in hertz time-domain spectroscopy system, change the Terahertz electricity for getting to the modulator using Terahertz wiregrating
Field size modulations Terahertz transmission spectrum；
(3) laser pump (ing) regulates and controls: the part is integrated VO2The Terahertz active modulator of material is fixed on test with too
In hertz time-domain spectroscopy system, is got on the modulator using femtosecond laser and modulate Terahertz transmission spectrum.
Four, the integrated VO in part2The Terahertz active modulator experimental result of material and discussion
The part that the present invention designs integrates VO2The most important application aspect of Terahertz active modulator of material is that signal passes
Defeated modulation.As can be seen from Figure 3, when temperature is 60 degree, in 0.704THz, temperature increases the centre frequency of transmission peaks modulator transmission peaks
When to 68 degree, the centre frequency of transmission peaks is in 0.595THz, and when temperature continues to increase to 72 degree, the centre frequency of transmission peaks is
0.476THz, frequency modulation(PFM) reach 228GHz.
In addition, part of the invention integrates VO2The Terahertz active modulator of material also can be used Terahertz electric field with
And the method for laser regulation modulates transmission spectrum.Other active Terahertz modulators relatively reported in the literature, can be with smaller
Additional temperature, Terahertz electric field, laser change to obtain bigger modulation range, while the integrated VO in part2The Terahertz master of material
Dynamic modulator uses minimal amount of VO2Material regulates and controls freer and more economical practical.
In short, the part that we design and produce integrates VO2The Terahertz active modulator of material, it is new to be mainly reflected in structure
The advantages that grain husk, the selection of material is superior, and modulator approach is simple and convenient, and modulation is free, and modulation rate is high.According to actual needs, by right
The optimization design of structure can also obtain the better device of other tuning performances.Therefore, it is widely used in Terahertz modulator side
Face.
Claims (9)
1. a kind of part integrates VO2The Terahertz active modulator of material, which is characterized in that including Al2O3Substrate is grown in institute
State Al2O3Part on substrate integrates VO2The metallic resonator structure of structure, the metallic resonator structure include multiple periods
The cellular construction of arrangement.
2. a kind of part integrates VO according to claim 12The Terahertz active modulator of material, which is characterized in that the list
Metal structure in meta structure is opening resonance Fang Huan, the VO2Structure is integrated in the opening of opening resonance Fang Huan.
3. a kind of part integrates VO according to claim 12The Terahertz active modulator of material, which is characterized in that described
Al2O3Substrate with a thickness of 0.5mm.
4. a kind of part integrates VO as described in claim 12The preparation method of the Terahertz active modulator of material, feature exist
In including the following steps: (1) in Al2O3VO is grown on substrate2Film；(2) spin coating photoresist AZ1500: VO is being grown2It is thin
The Al of film2O3On substrate, spin coating photoresist AZ1500；(3) it uv-exposure and development: is placed on litho machine and coats photoetching
The Al of glue AZ15002O3Substrate and mask plate are simultaneously aligned, and the structure of the mask plate is periodic structure, have been exposed followed by use
Developer for positive photoresist develops, and dries after then carrying out；(4) VO is etched using reactive ion etching process2Structure, acetone cleaning
Photoresist AZ1500 is dried after the cleaning of alcohol deionized water；(5) two layer photoresist LOR10b and AZ1500 of spin coating；Repeat step
(3), mask plate patterns are golden structure graph at this time；(6) sputtering metal membrane: magnetron sputtering apparatus is used, after step (5)
Al2O3One layer of metal is sputtered on substrate, will sputter the Al of one layer of metal2O3Substrate removing remove remaining photoresist with it is described
One layer of metal on photoresist, then removes remaining photoresist and obtains the resonator structure of periodic arrangement.
5. the integrated VO in part according to claim 42The preparation method of the Terahertz active modulator of material, which is characterized in that
In the step (2) and step (3), in the Al2O3One layer photoresist AZ1500, pre- revolving speed 600rpm of spin coating on substrate stablize
The time of revolving speed 4000rpm, pre- revolving speed and stabilized (steady-state) speed is respectively 6 seconds and 40 seconds, and baking temperature is 90 DEG C, and the time is 5 minutes,
The photoresist AZ1500 is exposed using litho machine, the time is 18 seconds, is shown after having exposed with developer for positive photoresist
Shadow, time are 17 seconds, are dried after then carrying out, and baking temperature is 90 DEG C, and the time is 10 minutes.
6. the integrated VO in part according to claim 42The preparation method of the Terahertz active modulator of material, which is characterized in that
Reactive ion etching process is used in the step (4), by gas CF4, controls throughput 40sccm, etch period 3min,
In the Al2O3Substrate surface processes periodic VO2Structure.
7. the integrated VO in part according to claim 42The preparation method of the Terahertz active modulator of material, which is characterized in that
In the step (5), in the Al2O3On substrate, first spin coating one layer photoresist LOR10b, pre- revolving speed 600rpm, stabilized (steady-state) speed
The time of 4000rpm, pre- revolving speed and stabilized (steady-state) speed is respectively 6 seconds and 40 seconds, and baking temperature is 150 DEG C, and the time is 5 minutes, then
The time of the second layer photoresist of spin coating AZ1500, pre- revolving speed 600rpm, stabilized (steady-state) speed 4000rpm, pre- revolving speed and stabilized (steady-state) speed point
Wei not be 6 seconds and 40 seconds, baking temperature is 90 DEG C, and the time is 5 minutes；Using litho machine to the photoresist LOR10b and AZ1500
It is exposed, the time is 18 seconds, is developed after having exposed with developer for positive photoresist, and the time is 14 seconds, is dried after then carrying out, and is dried
Roasting temperature is 90 DEG C, and the time is 10 minutes.
8. the integrated VO in part according to claim 42The preparation method of the Terahertz active modulator of material, which is characterized in that
In the step (6), in the Al of the photoresist AZ1500 and exposing2O3One layer of metal is grown on substrate, will grown one layer of gold
The Al of category2O3Substrate is immersed in removing in acetone soln and removes on the remaining photoresist AZ1500 and photoresist AZ1500
Then one layer of metal removes remaining photoresist LOR10b with developer solution and obtains the resonator structure of periodic arrangement.
9. integrating VO using a kind of part as described in claim 12The modulator approach of the Terahertz active modulator of material, it is special
Sign is, including following 3 kinds of modulation means:
1) temperature regulates and controls: the part is integrated VO2The Terahertz active modulator of material is fixed on controllable temperature specimen holder, is placed in
In test terahertz time-domain spectroscopy system, modulation Terahertz transmission spectrum is heated by thermal station；
2) part strong THz electric field regulation: is integrated into VO2When the Terahertz active modulator of material is fixed on high field Terahertz
At Terahertz hot spot convergence in the spectroscopic system of domain, the Terahertz active modulator is got to too using the change of Terahertz wiregrating
Hertz electric field level modulation Terahertz transmission spectrum；
3) laser pump (ing) regulates and controls: the part is integrated VO2When the Terahertz active modulator of material is fixed on test Terahertz
In the spectroscopic system of domain, is got on the Terahertz active modulator using femtosecond laser and modulate Terahertz transmission spectrum.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110426867A (en) * | 2019-07-31 | 2019-11-08 | 电子科技大学 | A kind of broadband Terahertz modulator based on gradual change opening |
| CN111123422A (en) * | 2020-01-07 | 2020-05-08 | 南京大学 | Novel terahertz dynamic adjustable grating and preparation method thereof |
| CN111641010A (en) * | 2020-06-15 | 2020-09-08 | 桂林电子科技大学 | Terahertz waveband temperature control switch device |
| CN116053735A (en) * | 2023-03-20 | 2023-05-02 | 电子科技大学 | Adjustable terahertz SSPPs transmission line |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110426867A (en) * | 2019-07-31 | 2019-11-08 | 电子科技大学 | A kind of broadband Terahertz modulator based on gradual change opening |
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| CN111123422A (en) * | 2020-01-07 | 2020-05-08 | 南京大学 | Novel terahertz dynamic adjustable grating and preparation method thereof |
| CN111641010A (en) * | 2020-06-15 | 2020-09-08 | 桂林电子科技大学 | Terahertz waveband temperature control switch device |
| CN116053735A (en) * | 2023-03-20 | 2023-05-02 | 电子科技大学 | Adjustable terahertz SSPPs transmission line |
| CN116053735B (en) * | 2023-03-20 | 2024-03-08 | 电子科技大学 | Adjustable terahertz SSPPs transmission line |
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