CN110456526A - A kind of flexible phasmon modulator of dynamic reconfigurable and preparation method thereof - Google Patents
A kind of flexible phasmon modulator of dynamic reconfigurable and preparation method thereof Download PDFInfo
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/19—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-reflection or variable-refraction elements not provided for in groups G02F1/015 - G02F1/169
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses flexible phasmon modulators of a kind of dynamic reconfigurable and preparation method thereof.The modulator includes: the micro-nano structure, left electrode and right electrode of flexible/elastic substrate, conductor or semiconductor material；The micro-nano structure of the conductor or semiconductor material is connected with left and right electrode to form the closed circuit of electric current respectively, and they are all located on the surface of flexible/elastic substrate.The modulator is mainly to be prepared on flexible/elastic substrate by medium/metal micro-nano structure and the left and right electrode being attached thereto and formed, it is based on a kind of novel regulatory mechanism --- the local thermomechanical effect of electric current excitation, it being capable of dynamic regulation local surface plasmon resonance wavelength and amplitude.This device with larger modulation depth and low energy consumption, has broad application prospects in terms of Development of Novel flexible device.
Description
Technical field
A kind of method that the present invention related to flexible device structure design and prepares such device, and in particular to a kind of dynamic can
Flexible phasmon modulation device of reconstruct and preparation method thereof.
Background technique
Efficiently, compact, controllable optical element is of great significance to next-generation highdensity optoelectronic integrated circuit is obtained.
In general, being made in rigid substrate using traditional nano fabrication technique such as interference lithography, electron beam exposure, focused-ion-beam lithography
Standby photoelectric cell or device out, optical property are just determined.These optical characteristics determined can only be dealt with integrated
The passive functions such as waveguide, sensing and enhancing in photonics, and in terms of the active functions such as tuning, modulation/switch, lasing by
Limitation.
Compared with the device based on rigid substrate, by flexible/elastic substrate in conjunction with functional element and formed flexibility
Device has various advantages, such as flexibility, dynamic tuning and biocompatibility, has caused the pole of numerous scientists
Big concern.Exactly these characteristics are allowed to be widely used in every field, such as can full-color tuning flexible phasmon device, can
The flat mirror head of zoom, stretchable wearable organic transistor etc..
Unfortunately, it is difficult directly to prepare on easily-deformable flexible/elastic substrate using traditional nano fabrication technique
Various micro-nano structures.In order to realize dynamic regulation flexibility phasmon nanostructure, scientist has developed many relevant dynamics
Control technique, such as mechanical stretching, Coulomb force, Lorentz force, luminous power and thermal expansion driving method.
However, such as how a kind of easily operated mode realizes that the tuned optical of larger modulation depth and low energy consumption is still
One challenge.Mechanical Driven usually requires an additional mechanical tensioning devices, and it is difficult to integrate into optoelectronic integrated circuit.
In relation to driving magnetically and optically, although relatively large modulation depth theoretically may be implemented, however, so far, experimentally close
The modulation depth of infrared band is less than 3% (Valente, J.et al, A magneto-electro-optical effect in
a plasmonic nanowire material.Nature communications.2015,6:7021)。
In addition, photon Meta Materials can be carried out by additional temperature controlling instruments hot dynamic regulation (Ou, J.Y.et al.,
Reconfigurable photonic metamaterials.Nano Letters.2011,11 (5): 2142-2144), and be somebody's turn to do
A large amount of energy losses and very high energy requirement are usually associated in regulation process, and if with the silicon nitride of low thermal coefficient of expansion
As substrate material can serious limit device performance.
In order to reduce energy consumption, it is contemplated that be by reducing the region of heat regulation on substrate, or using larger thermal expansion
Several substrate materials.For example, heating method of the selection based on metal nanometer line, this mode have benefited from self-heating effect (self-
Heating effect), accurate, stable operating temperature can be obtained in actual operation.
Currently, the preparation method of the modulator is mainly: using flexible/elastic substrate directly by medium/metal micro-nano knot
Under structure and left and right electrode are shifted from rigid substrate together.However, since flexible/elastic substrate is easy to happen in transfer process
Not expected deformation, causes the success rate of this technology very limited.
Summary of the invention
In view of the above problems, the object of the present invention is to provide a kind of flexible phasmon modulators of dynamic reconfigurable, should
Modulator can be this with larger modulation depth and low by controlling its optical characteristics of the regulation of input current dynamic reconfigurable
The device of the advantages that energy consumption has broad application prospects in terms of Development of Novel flexible device.
It is a further object of the present invention to provide a kind of preparation sides of the flexible phasmon modulator of above-mentioned dynamic reconfigurable
Method, this method are the local thermomechanical effects excited based on the novel modulation scheme of one kind-electric current, being capable of dynamic regulation local table
Face plasmon resonance wavelength and amplitude, realize biggish wavelength tuning and modulation depth.
The technical solution adopted in the present invention is as follows:
A kind of flexible phasmon modulator of dynamic reconfigurable, structure include: flexible/elastic substrate, conductor or half
The micro-nano structure of conductor material, left electrode and right electrode；The micro-nano structure of the conductor or semiconductor material is golden with left and right respectively
Belong to electrode to be connected so that the closed circuit of electric current can be formed, and they are all located on the surface of flexible/elastic substrate.
Furthermore, the flexible phasmon modulator be by medium/metal micro-nano structure and left and right electrode together
What preparation was formed on flexible/elastic substrate surface；The phasmon modulator is the local heat engine excited by electric current
Its optical characteristics of tool effect dynamic regulation, and it is restructural for regulating and controlling.
Furthermore, dimethyl silicone polymer (PDMS), polyvinyl alcohol (PVA) can be used in the flexible/elastic substrate
Equal materials；The thickness of the flexible/elastic substrate is greater than 0.1mm.
Furthermore, the medium/metal micro-nano structure on the flexible/elastic substrate and positive and negative electrode be by conductor or
Semiconductor material is prepared.
Furthermore, the conductor material be selected from gold, silver, platinum, aluminium, palladium metal one or more alloys；Described half
Conductor material is selected from one or more mixing of ITO material, II-VI race, III-V race or IV-IV race's inorganic compound material.
In addition, the present invention, which goes back emphasis elaboration, utilizes metallic film secondary transfer medium/metal micro-nano structure and left and right electrode
Preparation method.A kind of preparation method of the flexible phasmon modulator of dynamic reconfigurable comprising following steps:
Step 1: medium/metal micro-nano structure and left and right electrode are prepared in the rigid substrate with metallic film；
Specifically, above-mentioned steps one can be carried out according to the following steps:
1.1) one layer of metallic film is prepared in rigid substrate using electron beam evaporation methods；
Optionally, which can be used golden film, silverskin, palladium film, platinum film etc., and after polishing can be used in rigid substrate
Quartz plate, oxidized silicon chip etc.；
Preferably, the rigid substrate is using the silicon wafer after polishing, and metallic film is silverskin, using electron beam evaporation methods system
Standby metal silverskin, silverskin with a thickness of 120-150nm, evaporation rate isVacuum degree when vapor deposition is 5 × 10-7mbar。
1.2) the left and right electrode pattern that glue prepares corresponding micro-nano structure and is attached thereto is utilized on metallic film；
Optionally, the glue uses photoresist or electronic pastes, and preparation method uses photoetching or electron beam exposure；
Preferably, using polymethyl methacrylate (PMMA) electronic pastes, and by electron beam exposure method prepare metal/
The pattern of medium micro-nano structure and left and right electrode；
1.3) corresponding metal or dielectric film are prepared on above-mentioned sample, are being had by the lift-off technique of standard
The left and right electrode for preparing medium/metal micro-nano structure in the rigid substrate of silverskin and being attached thereto；
Optionally, metal or dielectric film are prepared using magnetron sputtering or electron beam evaporation methods.The metallic film can
For golden film, palladium film, platinum film etc., thickness range 20-200nm；The dielectric film can be ITO, ZnS, CdTe, Bi2Te3Deng film
Thickness can be 20-200nm.
Preferably, metallic film is prepared using electron beam evaporation methods, the metallic film is golden film, the golden film thickness
For 30nm, evaporation rate isVacuum degree when vapor deposition is 5 × 10-7mbar；Peeling off PMMA glue can be selected 54 DEG C of heat
Acetone soln, acetone soln can keep its temperature constant by heating water bath.
Step 2: the flexible/elastic substrate with nanoscale rough degree is prepared；In view of the forerunner of flexible/elastic substrate
Body is coated on the flexible/elastic substrate table after solidification, contacted with the rigid substrate surface on the rigid substrate surface after polishing
Face also has nanoscale rough degree.
Preferably, the flexible/elastic substrate is dimethyl silicone polymer (PDMS), obtains the substrate of nanoscale rough degree
Surface method are as follows:
The presoma for preparing PDMS (including main body and curing agent) is mixed and stirred for uniformly, and is coated on the silicon after polishing
Piece surface；Then, mixed bubble, is placed in oven and solidifies, PDMS substrate is cut when removing stirring by vacuumizing mode
It is cut into required size and removes, the available PDMS substrate with nanoscale rough degree；Wherein, oven temperature is preferably
60-80 DEG C, baking time should be less than 2 hours.
Step 3: the metallic film one that will have medium/metal micro-nano structure and left and right electrode using flexible/elastic substrate
It rises under being shifted from rigid substrate, after removing flood metallic film and being cleaned with deionized water, can be obtained this can dynamically be weighed
The flexible phasmon modulator of structure.
Preferably, the reagent of the removal flood metal silverskin is phosphoric acid solution.
Based on the flexibility phasmon modulator made from above-mentioned preparation method, the present invention also provides a kind of novel tune
Control mechanism-electric current excitation local thermomechanical effect.After external wire and mains input current, medium/metal micro-nano knot
The local Joule heat that structure generates can make the surface PDMS contacted that thermal deformation occur, and drive PDMS substrate and arch upward upwards, draw
The gap risen between adjacent nanostructures increases, so as to cause the local plasmon resonance wavelength blue shift of the modulator.
Compared with existing device structure design and fabricating technology, the present invention is proposed by periodic medium/metal
Micro-nano structure and the left and right electrode being attached thereto construct the flexible phasmon modulator formed on PDMS substrate, have such as
Lower advantage:
1) the flexibility phasmon modulator structure is simple, and medium/metal micro-nano structure functions not only as one and waits from sharp
First resonator, while being also heating element, and its local surface etc. can be regulated and controled from sharp by control input current dynamic
First resonant wavelength and amplitude；
2) since the modulator is the heating method (working region is small) based on nano wire, and PDMS substrate is with very big
Thermal expansion coefficient.Therefore, compared with through the device of additional temperature control, energy consumption can be greatly reduced, it is this that there is biggish tune
The novel flexible device of the advantages that depth processed and low energy consumption is that optical component and integrated photon circuit open a new road.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the flexible phasmon modulator of dynamic reconfigurable of the present invention.
Fig. 2 is one step 1 schematic diagram of the embodiment of the present application；
Fig. 3 is one step 2 schematic diagram of the embodiment of the present application；
Fig. 4 is one step 3 schematic diagram of the embodiment of the present application；
Fig. 5 is one step 4 schematic diagram of the embodiment of the present application；
Fig. 6 is one step 5 schematic diagram of the embodiment of the present application；
Fig. 7 is one step 6 schematic diagram of the embodiment of the present application；
Fig. 8 is one step 7 schematic diagram of the embodiment of the present application；
Fig. 9 is the scanning electron microscope (SEM) photograph of the flexibility phasmon modulator, and upper left illustration is linear type and flexure type gold nano
The enlarged drawing of linear array structure；
Figure 10 (a) is the reflectance spectrum figure of flexible phasmon modulator measurement after the input of different electric currents (0mA to 15mA)；
Figure 10 (b) is the variation diagram of the reflectivity at 1200nm wavelength after square wave current signal input.
Specific embodiment
To keep the purposes, technical schemes and advantages of the application clearer, below with reference to the application specific embodiment and
The technical solution of the application is explicitly described in corresponding attached drawing.
The invention discloses flexible phasmon modulators of a kind of dynamic reconfigurable and preparation method thereof.As shown in Figure 1,
The flexible phasmon modulator of dynamic reconfigurable of the invention, structure specifically include that flexible/elastic substrate 10, left and right electricity
The micro-nano structure 30 of pole 20, conductor or semiconductor material.The micro-nano structure 30 of the conductor or semiconductor material is electric with left and right respectively
Pole 20 is connected to form the closed circuit of electric current, and they are all located on the surface of flexible/elastic substrate 10.
Flexible phasmon modulator of the invention is mainly prepared by medium/metal micro-nano structure and left and right electrode together
It is formed on flexible/elastic substrate, periodic medium/metal micro-nano structure is connected to construct electric current with left and right electrode
Closed circuit.The modulator can be dynamically adjusted based on a kind of novel regulatory mechanism-electric current excitation local thermomechanical effect
Local surface plasmon resonance wavelength and amplitude are controlled, realizes biggish wavelength tuning and modulation depth.Flexibility etc. of the invention
It can be by controlling its optical characteristics of the regulation of input current dynamic reconfigurable from excimer modulator.It is this that there is biggish modulation
The device of the advantages that depth and low energy consumption has broad application prospects in terms of Development of Novel flexible device.
Embodiment one
The present embodiment be with prepare linear type and flexure type Crystal structure structure and the left and right electrode being attached thereto in
For the flexible phasmon modulator formed on PDMS substrate, and can be with the tune of dynamic reconfigurable by control input current
Control its reflectance spectrum.
A kind of preparation method of the flexible phasmon modulator of dynamic reconfigurable, specifically includes the following steps:
Step 1: it firstly, being successively cleaned by ultrasonic silicon substrate 11 with acetone, isopropanol and deionized water, after being dried with nitrogen, puts
It is placed on 120 DEG C of hot plates and toasts 10 minutes；Then, use electron beam evaporation methods prepare on a silicon substrate a layer thickness for
The metal silverskin 12 of 150nm, the vacuum degree and rate deposited at this time is respectively 5 × 10-7Mbar andAs shown in Figure 2；
Step 2: spin coating a layer thickness is the PMMA electronic pastes 21 of 480nm on the metal silverskin 12 of silicon substrate 11, is such as schemed
Shown in 3, spin coating rate is 6000rpm, and the time is 1 minute, and sample is placed on 173 DEG C of hot plates and is toasted 3.5 minutes；
Step 3: corresponding micro-nano structure and left and right electrode are prepared in PMMA electronic pastes 12 by electron-beam exposure system
Pattern utilizes MIBK solution development after end exposure, and the time is 1 minute, and is successively cleaned with isopropanol, deionized water, nitrogen
After drying, linear type and flexure type nanowire array structure and left and right electrode figure can be obtained on the metal silverskin 12 of silicon substrate
Case, wherein the part not being exposed is PMMA electronic pastes 31, as shown in Figure 4；
Step 4: in above-mentioned sample surfaces, the golden film with a thickness of 30nm is prepared using electron beam evaporation methods, such as Fig. 5 institute
Show, form gold thin film 41 in PMMA electronic pastes 31, and forms Crystal structure structure 30 on silverskin 12 and be attached thereto
Left and right electrode 20, the vacuum degree and rate deposited at this time is respectively 5 × 10-7Mbar and
Step 5: above-mentioned sample being put into 54 DEG C of hot acetone solution, after 6 hours, removes PMMA electronic pastes 31 and its
On gold thin film 41, as shown in Figure 6；
Step 6: liquid PDMS is in contact after solidification with the nanoscale rough degree of silicon chip surface after polishing, PDMS contact
Face also has nanoscale rough degree.After the PDMS substrate 10 for cutting suitable dimension with scalpel, and above-mentioned sample is placed in PDMS
On substrate surface, after standing 12 hours in the environment of constant temperature and pressure, and silicon substrate is removed.At this point, in the auxiliary of metal silverskin
Under, Crystal structure structure and the left and right electrode being attached thereto can be ideally transferred on PDMS substrate, as shown in fig. 7,.
Step 7: using phosphoric acid solution removal flood silverskin (time be 3 minutes), and after cleaning six times with deionized water,
It is gently dried up with nitrogen, it can prepare the flexibility phasmon modulator.By conducting wire 51 by left and right electrode 20, nanowires of gold
Array structure 30 and input power 52 are connected in series, to construct the closed circuit of electric current, as shown in Figure 8.
Fig. 9 show the scanning electron microscope (SEM) photograph according to flexible phasmon modulator manufactured in the present embodiment, and upper left illustration is
The enlarged drawing of linear type and flexure type Crystal structure structure.
In addition, by control input current, the dynamic regulation to the modulator may be implemented, thus to its optical mode into
The restructural tuning of Mobile state.Flexible phasmon modulator prepared by embodiments herein one is under the conditions of different input currents
It is illustrated for reflectance spectrum.The regulation process of the modulator is as described below:
After electric current input, the Joule heat that nanowires of gold generates can make the PDMS substrate contacted arch upward upwards, thus
Increase the gap between adjacent nano cable architecture, causes the modulator in the local surface plasmon resonance wave of near infrared band
Long movement.
Figure 10 (a) show when input current is respectively 0,2.3,4.5,6.6,8.7,10.8,12.9 and 15mA and measures
Reflectance spectrum.The reflection paddy of spectrum is as caused by the local surface phasmon of the structure.
It can be found that being continuously increased with input current, the caused reflection paddy of local surface phasmon occurs significant
Blue shift.In order to test the repeatability of the modulator, after inputting square wave current (peak point current 6.6mA), 1200nm has been monitored
The variation of device reflectivity at wavelength, as shown in Figure 10 (b), it is found that by controlling input current, can be somebody's turn to do with dynamic regulation
Modulator, and regulation process is restructural.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, therefore
Without departing from the technical solutions of the present invention, to the above embodiments according to the technical essence of the invention any simply to repair
Change, equivalent variations and modification, all of which are still within the scope of the technical scheme of the invention.
Claims (10)
1. a kind of flexible phasmon modulator of dynamic reconfigurable, it is characterised in that comprising:
Flexible/elastic substrate, the micro-nano structure of conductor or semiconductor material, left electrode and right electrode；The conductor or semiconductor
The micro-nano structure of material is connected with left and right electrode to form the closed circuit of electric current respectively, and they are all located at flexibility/bullet
On the surface of property substrate.
2. the flexible phasmon modulator of dynamic reconfigurable as described in claim 1, it is characterised in that: it is described it is flexible equal from
Excimer modulator is that medium/metal micro-nano structure and the left and right electrode being attached thereto are prepared the shape on flexible/elastic substrate
At；The phasmon modulator is by its optical characteristics of the local thermomechanical effect dynamic regulation of electric current excitation, and tune
Control is restructural.
3. the flexible phasmon modulator of dynamic reconfigurable as described in claim 1, it is characterised in that: the flexibility/bullet
The materials such as dimethyl silicone polymer (PDMS), polyvinyl alcohol (PVA) can be used in property substrate；The thickness of the flexible/elastic substrate
Greater than 0.1mm.
4. a kind of flexible phasmon modulator of dynamic reconfigurable as described in claim 1, it is characterised in that: described soft
Medium/metal micro-nano structure and left and right electrode in property/elastic substrate are prepared by conductor or semiconductor material.
5. a kind of flexible phasmon modulator of dynamic reconfigurable as claimed in claim 4, it is characterised in that: the conductor
Material be selected from gold, silver, platinum, aluminium, palladium metal one or more alloys；The semiconductor material be selected from ITO material, II-VI race,
One or more mixing of III-V race or IV-IV race's inorganic compound material.
6. a kind of preparation method of the flexible phasmon modulator of dynamic reconfigurable, which comprises the following steps:
Step 1, have or with metallic film rigid substrate on do not prepare corresponding medium/metal micro-nano structure and
Left and right electrode；
Step 2 prepares the flexible/elastic substrate with nanoscale rough degree；
Corresponding medium/metal micro-nano structure and left and right electrode are transferred together to flexible/elastic substrate, are going by step 3
After flood metallic film, a kind of flexible phasmon modulator of dynamic reconfigurable can be obtained.
7. the preparation method of the flexible phasmon modulator of dynamic reconfigurable as claimed in claim 6, it is characterised in that: step
In rapid one, the rigid substrate uses the substrates such as silicon wafer, quartz plate or the oxidized silicon chip after polishing；The metallic film is gold
The films such as film, silverskin, palladium film or platinum film, thickness range 20-200nm.
8. the preparation method of the flexible phasmon modulator of dynamic reconfigurable as claimed in claim 6, it is characterised in that: step
In rapid two, the flexible/elastic substrate approach of nanoscale rough degree is obtained are as follows:
The presoma (including main body and curing agent) for preparing flexible/elastic substrate is mixed and stirred for uniformly, to be coated on rigidity lining
Surface after the polishing of bottom vacuumizes mixed air when removal stirring in vacuum ware, the size of needs is cut into after solidification simultaneously
It removes, the elastic substrate with nanoscale rough degree can be obtained.
9. the preparation method of the flexible phasmon modulator of dynamic reconfigurable as claimed in claim 6, which is characterized in that step
In rapid three, corresponding medium/metal micro-nano structure and left and right electrode are transferred together to the specific work used to flexible/elastic substrate
Process:
If being prepared for metallic film in rigid substrate in advance, which can be with secondary transfer medium/metal micro-nano structure and a left side
Right electrode, and can be used as effective support of micro-nano structure, ensure that structure will not be damaged in transfer process；It is served as a contrast by flexible/elastic
Bottom is by after the metallic film transfer with micro-nano structure and left and right electrode, and (this process is not it is ensured that damage for removal flood metallic film
Bad medium/metal micro-nano structure, left and right electrode and substrate), the preparation of novel flexible phasmon modulator may be implemented.
10. the preparation method of the flexible phasmon modulator of dynamic reconfigurable as claimed in claim 6, which is characterized in that
In step 3, by corresponding medium/metal micro-nano structure and left and right electrode be transferred together to flexible/elastic substrate use it is specific
Process:
If when in rigid substrate without metallic film, can use the flexible/elastic substrate adhered to by force directly by large-sized metal/
Medium micro-nano structure and left and right electrode are shifted, and can be obtained a kind of novel flexible phasmon modulator.
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