CN108051885A - Radially and angularly polarize adjustable column vector OAM transmitting chips and preparation method thereof - Google Patents
Radially and angularly polarize adjustable column vector OAM transmitting chips and preparation method thereof Download PDFInfo
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- CN108051885A CN108051885A CN201711423110.9A CN201711423110A CN108051885A CN 108051885 A CN108051885 A CN 108051885A CN 201711423110 A CN201711423110 A CN 201711423110A CN 108051885 A CN108051885 A CN 108051885A
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- loop waveguide
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- 238000002360 preparation method Methods 0.000 title claims description 8
- 230000008878 coupling Effects 0.000 claims abstract description 16
- 238000010168 coupling process Methods 0.000 claims abstract description 16
- 238000005859 coupling reaction Methods 0.000 claims abstract description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 230000010287 polarization Effects 0.000 description 20
- 230000005684 electric field Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The present invention relates to one kind radially and angularly to polarize adjustable column vector OAM transmitting chips, the micro-loop waveguide integrated including on piece and coupling straight wave guide and is opened in the angular grating array that being lost by light engraving in micro-loop waveguide is formed.
Description
Technical field
It, can more particularly, to a kind of radially and angularly polarize the present invention relates to optic communication or quantum information process field
Column vector OAM transmitting chips of tune and preparation method thereof.
Background technology
Light beam with helical phase wavefront can carry eigenfunction orbital angular momentum, and photon topological charge number is free by space
Degree determines.Photon trajectory angular momentum(OAM)Due to its infinite number of eigen mode, information capacity theoretically can be infinitely expanded,
Provide new photon information degree of freedom.Therefore the OAM light beams of carrying photon trajectory angular momentum are being widely used in light and are leading to
In the applications such as letter and quantum information processing.On the other hand, compared to generally existing in nature space uniform light beam such as
Linear polarization and elliptical polarization light beam have the column vector beam of column symmetry electric field polarization distribution, particularly radial and angular polarization
Light beam has special focus characteristics, has in fields such as high-resolution imaging, nano particle manipulation and Terahertz Technologies huge
Development and show its application potential.
And column vector OAM light beams have the polarization characteristic of column symmetry due to carrying above-mentioned photon trajectory angular momentum, in light
Sub- logic gates and the processing of Higher Dimensional Metric sub-information etc. show more multifarious application prospect.The light is generated at present
The technology of beam is mainly using discrete component, such as wave plate, spiral phase plate and q plates etc., the drawback is that size is big and collects
It is low into spending.And the on piece silicon substrate developed in recent years integrates OAM ballistic devices, and the light of period profile is placed in the inside of silicon waveguide
Grid are as scattering object, and by the OAM light beams of the Mode Coupling in micro-loop waveguide to free space transmission, topological charge number can pass through letter
Single change input resonance wavelength is adjusted, and has the advantages such as the good and easy adjusting of high integration, stability, but it generates OAM
Light beam can carry unpurified angular polarization state, and polarization state is non-adjustable.It therefore can be to the OAM of the light beam of generation and column vector
The single on piece solution that polarization carries out Independent adjustable is still not mature enough.
The content of the invention
The present invention can not be only to photon trajectory angular momentum and the progress of radial direction/angular polarization state to solve existing on piece scheme
The defects of vertical adjustment, provides one kind and radially and angularly polarizes adjustable column vector OAM transmitting chips, which can be to device
The photon trajectory angular momentum and radial direction/angular polarization state of the OAM light beams of generation carry out independent adjustment, possess very broad application
Prospect.
To achieve the above object, the technical solution taken of the present invention is:
Adjustable column vector OAM transmitting chips are radially and angularly polarized, the micro-loop waveguide integrated including on piece and coupling straight wave guide,
And it is opened in the angular grating array that being lost by light engraving in micro-loop waveguide is formed.
In said program, the radial electric field component of TE basic modes boundary above micro-loop waveguide in micro-loop waveguide under cylindrical coordinate
Account for leading at face, and angular electric field strength can be neglected.On the contrary, the angular electric field component of TM basic modes boundary above micro-loop waveguide
Face accounts for leading, and radial electric field intensity is very faint.When incident light is TE patterns, the angular grating that is opened in micro-loop waveguide
Array will mainly couple radial electric field component and generate radial direction OAM light beams to free space;Similarly, when incident light is TM patterns
When the device will generate angular OAM light beams.Meanwhile micro-loop waveguide is used to carry out wavelength selection and orbital angular momentum to emission spectrum
Topological charge regulation and control, achieve the purpose that regulate and control photon trajectory angular momentum.Therefore, which can be by simply adjusting incident light
Polarization state and wavelength realize the adjusting of photon trajectory angular momentum and column vector polarization state.
Meanwhile the system of adjustable column vector OAM transmitting chips is radially and angularly polarized the present invention also provides more than one
Preparation Method, specific scheme are as follows:
S1. growing silicon oxide layer on substrate, then by chemical vapor process on silicon oxide layer deposited silicon nitride layer, and revolve
Apply negative photoresist;
S2. electron beam exposure is carried out after spin coating photoresist, suitable overexposure is carried out to micro-loop waveguide and improves exposure dose, it is micro-
There is overexposure in correspondence position where the angular grating array in ring waveguide top, and couples straight wave guide then normal exposure;After development,
Due to overexposure, the residual photoresist at angular grating array forms smooth inverted cone-shaped structure;
S3. micro-loop waveguide and coupling straight wave guide structure are etched completely after plasma etch process;Due to angular grating
The barrier effect of photoresist is remained at array, light engraving loses to form angular grating array in micro-loop waveguide.
S4. the photoresist in O2 plasma removal devices is utilized.
Compared with prior art, the advantages of the present invention are:
In scheme provided by the invention, micro-loop waveguide is designed to support TE patterns and TM patterns simultaneously, and orbital angular momentum is led to
It crosses change input wavelength and changes topological charge number, then determine to be transmitted to the OAM light beams of free space by the polarization state of input light
Column vector polarization state, the orbital angular momentum and polarization state of the OAM light beams of final device transmitting can be individually adjusted.Pass through
Chip can be prepared by single etch using preparation method provided by the invention, chip can partly be led in general
Extensive flow production, has larger application prospect on body micro Process platform.
Description of the drawings
Fig. 1 is the structure diagram of chip.
Fig. 2 is the preparation flow figure of chip.
Specific embodiment
To be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, with reference to
The drawings and specific embodiments, how the present invention is further explained implements.
Embodiment 1
As shown in Figure 1, provided by the invention radially and angularly polarize adjustable column vector OAM transmitting chips, integrated including on piece
Micro-loop waveguide 2 and coupling straight wave guide 3 and be opened in the angular grating array 1 that being lost by light engraving in micro-loop waveguide 2 is formed.
In said program, the refractive index characteristic of micro-loop waveguide 2 causes the footpath of the light field of the TE and TM both of which in waveguide
It is exactly the opposite to the distribution situation of component and azimuth component intensity above waveguide.Therefore by opening up erosion in micro-loop waveguide 2
Angular grating array 1, can be coupled to free space by the azimuth component of the radial component of TE basic modes and TM basic modes respectively, pass through
The polarization state for changing input light changes the polarization state of the OAM light beams generated.And micro-loop waveguide 2 carries out wavelength selection to emission spectrum
Regulate and control with the topological charge of orbital angular momentum, and then regulate and control the purpose of orbital angular momentum.Therefore, by changing the humorous of input light
The orbital angular momentum of OAM light beams and column vector polarization state for the adjusting transmitting that vibration wave is grown and polarization state can be independent(Radial polarisation
Or angular polarization).
In the present embodiment, the micro-loop waveguide 2 and coupling straight wave guide 3 are that silicon nitride material is made, the micro-loop waveguide 2
Refractive index with coupling straight wave guide 3 is 2.0.
In the present embodiment, the micro-loop waveguide 2 couples the setting height of straight wave guide 3 as 0.58 micron, micro-loop waveguide 2
Ring width is 1.2 microns, and the width of coupling straight wave guide 3 is 1.2 microns.The radius of the micro-loop waveguide 2 is 60 microns, straight with coupling
The coupling of 3 structure of waveguide is at intervals of 200 nanometers.
In the present embodiment, the quantity for the angular grating that angular grating array 1 includes is 420, and 420 angular gratings are in circle
It is equally distributed in circumferential direction.Wherein, the etching depth of angular grating is 100 nanometers, and global shape is in inverted cone shape, at the top of
Open up a diameter of 160 nanometers, the center of angular grating is located at the center line of 2 ring width of the micro-loop waveguide lateral deviation into micro-loop waveguide 2
From 60 nanometers.
Embodiment 2
Present embodiments provide a kind of preparation method of the chip of embodiment 1, such as Fig. 2(a)、(b)、(c)、(d)It is shown, it is specific
Scheme it is as follows:
S1. 400 microns thick of silicon oxide layer 03 is grown on crystal orientation silicon substrate, then by chemical vapor process in silicon oxide layer
The silicon nitride layer 02 of 580 nanometer thickness of upper deposition, and spin coating negative photoresist 01;
S2. electron beam exposure is carried out after spin coating photoresist, suitable overexposure is carried out to micro-loop waveguide and improves exposure dose, it is micro-
There is overexposure in correspondence position where the angular grating array in ring waveguide top, and couples straight wave guide then normal exposure;After development,
Due to overexposure, the residual photoresist at angular grating array forms smooth inverted cone-shaped structure;
S3. micro-loop waveguide and coupling straight wave guide structure are etched completely after plasma etch process;Due to angular grating
The barrier effect of photoresist is remained at array, light engraving loses to form angular grating array in micro-loop waveguide.
S4. the photoresist in O2 plasma removal devices is utilized.
Finally illustrate, the foregoing is merely the embodiment of the present invention, are not intended to limit the scope of the invention, every
The equivalent structure or equivalent flow shift made using description of the invention and accompanying drawing content, is directly or indirectly used in other
Relevant technical field, is included within the scope of the present invention.
Claims (10)
1. radially and angularly polarize adjustable column vector OAM transmitting chips, it is characterised in that:The micro-loop waveguide integrated including on piece
With coupling straight wave guide and be opened in the angular grating array that being lost by light engraving in micro-loop waveguide formed.
2. according to claim 1 radially and angularly polarize adjustable column vector OAM transmitting chips, it is characterised in that:Institute
It is that silicon nitride material is made to state micro-loop waveguide and coupling straight wave guide.
3. according to claim 2 radially and angularly polarize adjustable column vector OAM transmitting chips, it is characterised in that:Institute
It states micro-loop waveguide and couples the refractive index of straight wave guide as 2.0.
4. according to claim 2 radially and angularly polarize adjustable column vector OAM transmitting chips, it is characterised in that:Institute
It states micro-loop waveguide, couple the setting height of straight wave guide as 0.58 micron, the ring width of micro-loop waveguide is 1.2 microns, couples straight wave guide
Width be 1.2 microns.
5. according to claim 4 radially and angularly polarize adjustable column vector OAM transmitting chips, it is characterised in that:Institute
The radius of micro-loop waveguide is stated as 60 microns, with coupling the coupling of straight wave guide structure at intervals of 200 nanometers.
6. adjustable column vector OAM transmitting chips, feature are radially and angularly polarized according to claim 1 ~ 5 any one of them
It is:The angular grating array includes multiple equally distributed in a circumferential direction, the angle being opened on micro-loop waveguide top surface
To grating.
7. according to claim 6 radially and angularly polarize adjustable column vector OAM transmitting chips, it is characterised in that:Institute
The etching depth of angular grating is stated as 100 nanometers, global shape is in inverted cone shape, at the top of open up a diameter of 160 nanometers.
8. according to claim 6 radially and angularly polarize adjustable column vector OAM transmitting chips, it is characterised in that:Institute
The center for stating angular grating is located at the center line of micro-loop waveguide ring width to deviateing 60 nanometers on the inside of micro-loop waveguide.
9. according to claim 6 radially and angularly polarize adjustable column vector OAM transmitting chips, it is characterised in that:Institute
The quantity for stating the angular grating that angular grating array includes is 420.
10. a kind of preparation method of claim 1 ~ 9 any one of them column vector OAM transmitting chips, it is characterised in that:Including
There are following steps:
S1. growing silicon oxide layer on substrate, then by chemical vapor process on silicon oxide layer deposited silicon nitride layer, and revolve
Apply negative photoresist;
S2. electron beam exposure is carried out after spin coating photoresist, suitable overexposure is carried out to micro-loop waveguide and improves exposure dose, it is micro-
There is overexposure in correspondence position where the angular grating array in ring waveguide top, and couples straight wave guide then normal exposure;After development,
Due to overexposure, the residual photoresist at angular grating array forms smooth inverted cone-shaped structure;
S3. micro-loop waveguide and coupling straight wave guide structure are etched completely after plasma etch process;Due to angular grating
The barrier effect of photoresist is remained at array, light engraving loses to form angular grating array in micro-loop waveguide;
S4. the photoresist in O2 plasma removal devices is utilized.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109253836A (en) * | 2018-10-18 | 2019-01-22 | 武汉大学 | A kind of micro-loop optical vacuum meter |
CN109683239A (en) * | 2019-01-23 | 2019-04-26 | 上海交通大学 | Vector vortex beams radiator and its application in photon integrated chip |
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CN104993374A (en) * | 2015-07-22 | 2015-10-21 | 中国科学院半导体研究所 | Single-mode lasing circular micro-cavity laser |
CN104990871A (en) * | 2015-06-16 | 2015-10-21 | 电子科技大学 | Optical waveguide biochemical sensor with grating annulet intermodulation structure |
CN105591284A (en) * | 2016-01-18 | 2016-05-18 | 华中科技大学 | Grating-assisted micro-column-cavity surface emitting laser |
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2017
- 2017-12-25 CN CN201711423110.9A patent/CN108051885A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104990871A (en) * | 2015-06-16 | 2015-10-21 | 电子科技大学 | Optical waveguide biochemical sensor with grating annulet intermodulation structure |
CN104993374A (en) * | 2015-07-22 | 2015-10-21 | 中国科学院半导体研究所 | Single-mode lasing circular micro-cavity laser |
CN105591284A (en) * | 2016-01-18 | 2016-05-18 | 华中科技大学 | Grating-assisted micro-column-cavity surface emitting laser |
Non-Patent Citations (2)
Title |
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RUI LI等: "Radially Polarized Orbital Angular Momentum Beam Emitter Based on Shallow-Ridge Silicon Microring Cavity", 《IEEE PHOTONICS JOURNAL》 * |
徐延海: "集成OAM光束发射器模式纯度仿真分析", 《电子测试》 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109253836A (en) * | 2018-10-18 | 2019-01-22 | 武汉大学 | A kind of micro-loop optical vacuum meter |
CN109683239A (en) * | 2019-01-23 | 2019-04-26 | 上海交通大学 | Vector vortex beams radiator and its application in photon integrated chip |
CN109683239B (en) * | 2019-01-23 | 2023-09-12 | 上海交大知识产权管理有限公司 | Vector vortex beam radiator in photon integrated chip and application thereof |
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Application publication date: 20180518 |