CN113257986A - Superconducting nanowire single photon detector based on super-surface structure and preparation method thereof - Google Patents
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Abstract
The invention provides a superconducting nanowire single photon detector based on a super-surface structure and a preparation method thereof, wherein the detector comprises: a substrate; the superconducting nanowire single-photon detector is formed on one surface of the substrate and comprises a superconducting nanowire layer formed on the substrate; the super-surface structure is formed on the other surface of the substrate and formed by etching the other surface of the substrate, the super-surface structure is composed of cylinders with different diameters and gradient phase distribution, and the super-surface structure focuses vertical incident light on the superconducting nanowire single photon detector; the thickness of the substrate after removing the super-surface structure is adapted to the focal length of the super-surface structure. The whole system of the superconducting nanowire single-photon detector is simple and exquisite; in addition, the super-surface structure is formed by directly etching the substrate and is processed together with the superconducting nanowire single-photon detector, so that the super-surface structure is not required to be assembled and is not required to be externally aligned and assisted, the integration is convenient, the alignment precision and the safety are high, the super-surface structure is not influenced by external vibration, and the super-surface structure is convenient to carry and move.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a superconducting nanowire single photon detector based on a super-surface structure and a preparation method thereof.
Background
A Superconducting Nanowire Single-Photon Detector (SNSPD) is generally made of a Superconducting thin film material with a nanoscale width and a hundred-nanometer or even micrometer-scale length, and has the characteristics of high detection efficiency, low dark count, small time jitter, high response speed and the like. Therefore, the superconducting nanowire single photon detector has wide application fields, in particular to the fields of quantum secret communication, quantum optical computation, classical laser communication, time flight depth imaging and the like.
In a large number of practical applications, the system efficiency and the detection speed of the superconducting nanowire single photon detector are very important performance indexes. The common optical coupling modes of the superconducting nanowire single photon detector comprise optical fiber vertical coupling and optical waveguide coupling, wherein in the optical fiber vertical coupling mode, the coupling efficiency of a device limits the system detection efficiency of the optical fiber vertical coupling superconducting nanowire single photon detector. In order to achieve high optical coupling efficiency, the most straightforward approach is to increase the effective detection area of the detector. However, increasing the area of the superconducting nanowire also increases the dynamic inductance of the device, which results in a longer recovery time of the device, which inevitably reduces the detection rate of the device and affects the application of the device in many fields; in addition, in terms of processing and manufacturing of devices, as the effective detection area of the devices is increased, that is, the length of the superconducting nanowire is greatly increased, the probability of introducing defects into the nanowire is increased, and the difficulty in manufacturing the devices is increased rapidly, so that simply increasing the area of the nanowire region is not a perfect means for solving the problem. On the other hand, people use the traditional optical lens combination to carry out light spot convergence, but the optical lens firstly causes the whole system to be very heavy; secondly, an external auxiliary alignment structure is needed to realize alignment between the optical lens and the SNSPD, and the optical lens and the SNSPD are assembled together, so that the safety performance is low; finally, as device sizes are gradually reduced, assembly difficulties are also increasing.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a superconducting nanowire single photon detector based on a super-surface structure and a method for manufacturing the same, which are used to solve the problems of the prior art, such as a vertically-coupled superconducting nanowire single photon detector system with optical fiber, heavy weight, a complicated alignment process, low safety, and high assembly difficulty.
In order to achieve the above and other related objects, the present invention provides a superconducting nanowire single photon detector based on a super-surface structure, the single photon detector comprising:
a substrate having opposite sides;
the superconducting nanowire single-photon detector is formed on one surface of the substrate and comprises a superconducting nanowire layer formed on the substrate;
the super-surface structure is formed on the other surface of the substrate and formed by etching the other surface of the substrate, the super-surface structure is composed of cylinders with different diameters and gradient phase distribution, and the super-surface structure focuses vertical incident light on the superconducting nanowire single photon detector;
and the thickness of the substrate after the super-surface structure is removed is matched with the focal length of the super-surface structure.
Optionally, the substrate is a silicon substrate, and the super-surface structure is a silicon-based super-surface structure.
Further, the super-surface structure is a circular silicon-based super-surface structure with parabolic phase distribution.
Furthermore, the radius of the super-surface structure is 15 μm, the thickness of the substrate after the super-surface structure is removed is 410 μm, and the diameter of the superconducting nanowire single photon detector is 5 μm.
Optionally, the superconducting nanowire layer is a niobium nitride superconducting nanowire layer.
The invention also provides a preparation method of the superconducting nanowire single-photon detector based on the super-surface structure, which is used for preparing the superconducting nanowire single-photon detector based on the super-surface structure and comprises the following steps:
providing a substrate, wherein the substrate is provided with two opposite sides;
depositing a superconducting thin film layer on one surface of the substrate, and photoetching and etching the superconducting thin film layer to form a superconducting nanowire layer so as to form a superconducting nanowire single-photon detector;
and photoetching the other surface of the substrate to form cylinders with different diameters and gradient phase distribution on the surface of the substrate, wherein all the cylinders form a super-surface structure.
Optionally, after the superconducting nanowire single photon detector is formed, the method further includes: and coating a protective layer on the surface of one side of the substrate and the surface of the superconducting nanowire layer.
Optionally, the substrate is a silicon substrate, and the super-surface structure is a silicon-based super-surface structure.
Further, the super-surface structure is a circular silicon-based super-surface structure with parabolic phase distribution.
Optionally, the superconducting thin film layer is a niobium nitride thin film layer, and the superconducting nanowire layer is a niobium nitride superconducting nanowire layer.
As described above, the superconducting nanowire single-photon detector based on the super-surface structure and the preparation method thereof directly form the super-surface structure by etching the substrate, and realize focusing of vertical incident light on the superconducting nanowire single-photon detector to realize light spot convergence based on the combination of the super-surface structure and the substrate, so that the whole system is simple and exquisite; in addition, the super-surface structure is formed by directly etching the substrate and is processed together with the superconducting nanowire single-photon detector, so that the super-surface structure is not required to be assembled and is not required to be externally aligned and assisted, the integration is convenient, the alignment precision and the safety are high, the super-surface structure is not influenced by external vibration, and the super-surface structure is convenient to carry and move.
Drawings
FIG. 1 is a schematic perspective view of a superconducting nanowire single photon detector based on a super-surface structure according to the present invention.
FIG. 2 is a schematic cross-sectional view of a superconducting nanowire single photon detector based on a super-surface structure according to the present invention.
FIGS. 3 and 4 are simulation diagrams showing far-field projection results of light waves of normal incident light of the superconducting nanowire single-photon detector based on the super-surface structure along the propagation axis z according to an example of the invention; the light intensity in fig. 4 is gradually increased to a maximum value and then gradually decreased (as indicated by arrows) on the origin line of the x-axis, and the light intensity is the strongest when the z-axis is about 410 μm.
FIGS. 5 and 6 are schematic diagrams showing optical field distribution simulation of light waves of vertically incident light of the superconducting nanowire single-photon detector based on the super-surface structure at a focal point according to an example of the present invention; the light intensity in fig. 6 changes in such a manner that the light intensity becomes stronger closer to the origin of the x-axis and the y-axis (as indicated by arrows in the figure).
Fig. 7 to 14 are schematic structural diagrams shown in steps of a method for manufacturing a superconducting nanowire single-photon detector based on a super-surface structure according to the present invention.
Description of the element reference numerals
10 substrate
11 superconducting nanowire single photon detector
110 superconducting thin film layer
111 superconducting nanowire layer
12 super surface structure
120 cylinder
121 super surface structure profile
13 normally incident light
14 photoresist layer
140 patterned photoresist layer
15 protective layer
Thickness D
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 14. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed according to actual needs, and the layout of the components may be more complicated.
Example one
As shown in fig. 1, fig. 2 and fig. 14, the present embodiment provides a superconducting nanowire single-photon detector based on a super-surface structure, where the single-photon detector includes:
a substrate 10 having opposite sides, such as an upper surface and a lower surface in fig. 1;
a superconducting nanowire single photon detector 11 formed on one surface of the substrate 10, such as the lower surface in fig. 1, and including a superconducting nanowire layer 111 (shown in fig. 14) formed on the substrate 10;
a super-surface structure 12 formed on the other surface of the substrate 10, such as the upper surface in fig. 1, and the super-surface structure 12 is formed by etching the other surface of the substrate 10, the super-surface structure 12 is composed of cylinders 120 with different diameters and gradient phase distribution, and the super-surface structure 12 focuses the vertical incident light 13 onto the superconducting nanowire single photon detector 11;
the thickness D of the substrate 10 after removal of the super-surface structure 12 is adapted to the focal length of the super-surface structure 12.
The superconducting nanowire single-photon detector based on the super-surface structure provided in the embodiment directly forms the super-surface structure by etching the substrate, and realizes focusing of vertical incident light onto the superconducting nanowire single-photon detector to realize light spot convergence based on the combination of the super-surface structure and the substrate, so that the whole system is simple and exquisite; in addition, the super-surface structure is formed by directly etching the substrate and is processed together with the superconducting nanowire single-photon detector, so that the super-surface structure is not required to be assembled and is not required to be externally aligned and assisted, the integration is convenient, the alignment precision and the safety are high, the super-surface structure is not influenced by external vibration, and the super-surface structure is convenient to carry and move.
By way of example, the material of the substrate 10 may be any material suitable for preparing a super-surface structure, and may be, for example, a silicon oxide material or a silicon material. In this embodiment, the substrate 10 is preferably made of silicon, and the super-surface structure 12 is a silicon-based super-surface structure.
As shown in fig. 14, as an example, the material of the superconducting nanowire layer 111 in the superconducting nanowire single-photon detector 11 may be any material suitable for preparing a superconducting nanowire single-photon detector, and in this embodiment, the material of the superconducting nanowire layer 111 is selected to be niobium nitride.
It should be noted that the distribution mode, the size and other parameters of the cylinders 120 in the super-surface structure 12 are determined according to the size of the light spot to be focused by the superconducting nanowire single-photon detector 11 and the light intensity distribution mode of the light spot, and are not limited herein.
As shown in fig. 3 to 6, a circular silicon-based super-surface structure with a parabolic phase distribution of the super-surface structure 12 is designed by using simulation software, that is, the cylinder 120 is a parabolic phase distribution, wherein the parameters of the super-surface structure 12 are set as follows: the super-surface structure profile 121 is circular with a radius of 15 μm. As shown in fig. 3 and 4, simulation software is used to simulate the far field projection result of the light wave along the propagation axis (Z axis, i.e. the thickness direction of the substrate), and fig. 3 and 4 are the light field distribution of the light field along the Z axis propagation direction, from which it can be seen that the focal length of the super-surface structure is about 410 μm; fig. 5 and 6 are the light field distributions of the light field at the focal points, from which it can be seen that the half-peak width of the light beam at the focal plane is about 5 μm. Therefore, the parabolic phase-distributed super-surface structure can converge light spots with the diameter of 30 mu m on the superconducting nanowire single-photon detector with the diameter of about 5 mu m.
Example two
The embodiment provides a method for preparing a superconducting nanowire single photon detector based on a super-surface structure, and the preparation method can be used for preparing the superconducting nanowire single photon detector based on the super-surface structure described in the first embodiment, so that the beneficial effects obtained by the method can be referred to in the first embodiment, and are not described herein again.
The preparation method comprises the following steps:
as shown in fig. 7, step S1 is performed to provide a substrate 10, where the substrate 10 has two opposite surfaces, such as the upper surface and the lower surface in fig. 7.
By way of example, the material of the substrate 10 may be any material suitable for preparing a super-surface structure, and may be, for example, a silicon oxide material or a silicon material. In this embodiment, the material of the substrate 10 is preferably silicon.
As shown in fig. 8 to 11, step S2 is then performed to deposit a superconducting thin film layer 110 on one side of the substrate 10 (as shown in fig. 8), and the superconducting thin film layer 110 is lithographically etched to form a superconducting nanowire single photon detector 111 (as shown in fig. 11), so as to form the superconducting nanowire single photon detector 11.
As an example, the material of the superconducting nanowire layer 111 in the superconducting nanowire single photon detector 11 may be any material suitable for preparing a superconducting nanowire single photon detector, and in this embodiment, the material of the superconducting nanowire layer 111 is selected to be niobium nitride.
As shown in fig. 9 to 11, as an example, a specific process of lithographically etching the superconducting thin film layer 110 into the superconducting nanowire layer 111 is as follows: depositing a photoresist layer 14 on the surface of the superconducting thin film layer 110 (as shown in fig. 9); patterning the photoresist layer 14 into a patterned photoresist layer 140 (shown in fig. 10); the superconducting thin film layer 110 is etched based on the patterned photoresist layer 140, the superconducting nanowire layer 111 is formed, and the patterned photoresist layer 140 is removed (as shown in fig. 11).
As shown in fig. 12, as an example, after the superconducting nanowire single photon detector is formed, a step of coating a protective layer 15 on one surface of the substrate 10 and on a surface of the superconducting nanowire layer 111 is further included to protect the superconducting nanowire single photon detector in a subsequent process.
As shown in fig. 14, finally, step S3 is performed to lithographically etch the other side of the substrate 10 to form cylinders 120 with different diameters having gradient phase distribution on the surface of the substrate 10, all of the cylinders 120 forming the super-surface structure 12.
As shown in fig. 13 and 14, a specific process of forming the super-surface structure 12 is as follows: depositing and patterning a photoresist layer 14 on the other surface of the substrate 10 to form a patterned photoresist layer 140 (as shown in fig. 13); etching the substrate 10 based on the patterned photoresist layer 140, forming cylinders 120 with different diameters and gradient phase distribution on the surface of the substrate 10, and removing the patterned photoresist layer 140 and the protective layer 15 (as shown in fig. 14).
By way of example, the specific form of the super-surface structure 12 is not limited, and the form is specifically set according to different spot convergence requirements. In this embodiment, a circular super-surface structure with a parabolic phase distribution is illustrated.
In summary, the invention provides a superconducting nanowire single photon detector based on a super-surface structure and a preparation method thereof, the superconducting nanowire single photon detector based on the super-surface structure directly forms the super-surface structure by etching a substrate, and realizes focusing of vertical incident light on the superconducting nanowire single photon detector to realize light spot convergence based on the combination of the super-surface structure and the substrate, and the whole system is simple and exquisite; in addition, the super-surface structure is formed by directly etching the substrate and is processed together with the superconducting nanowire single-photon detector, so that the super-surface structure is not required to be assembled and is not required to be externally aligned and assisted, the integration is convenient, the alignment precision and the safety are high, the super-surface structure is not influenced by external vibration, and the super-surface structure is convenient to carry and move. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A superconducting nanowire single photon detector based on a super-surface structure is characterized by comprising:
a substrate having opposite sides;
the superconducting nanowire single-photon detector is formed on one surface of the substrate and comprises a superconducting nanowire layer formed on the substrate;
the super-surface structure is formed on the other surface of the substrate and formed by etching the other surface of the substrate, the super-surface structure is composed of cylinders with different diameters and gradient phase distribution, and the super-surface structure focuses vertical incident light on the superconducting nanowire single photon detector;
and the thickness of the substrate after the super-surface structure is removed is matched with the focal length of the super-surface structure.
2. The superconducting nanowire single photon detector based on a super-surface structure as claimed in claim 1, wherein: the substrate is a silicon substrate, and the super-surface structure is a silicon-based super-surface structure.
3. The superconducting nanowire single photon detector based on a super-surface structure as claimed in claim 2, wherein: the super-surface structure is a circular silicon-based super-surface structure with parabolic phase distribution.
4. The superconducting nanowire single photon detector based on a super-surface structure as claimed in claim 3, wherein: the radius of the super-surface structure is 15 mu m, the thickness of the substrate after the super-surface structure is removed is 410 mu m, and the diameter of the superconducting nanowire single photon detector is 5 mu m.
5. The superconducting nanowire single photon detector based on a super-surface structure as claimed in claim 1, wherein: the superconducting nanowire layer is a niobium nitride superconducting nanowire layer.
6. A method for preparing the superconducting nanowire single photon detector based on the super-surface structure according to any one of claims 1 to 5, characterized in that the method comprises the following steps:
providing a substrate, wherein the substrate is provided with two opposite sides;
depositing a superconducting thin film layer on one surface of the substrate, and photoetching and etching the superconducting thin film layer to form a superconducting nanowire layer so as to form a superconducting nanowire single-photon detector;
and photoetching the other surface of the substrate to form cylinders with different diameters and gradient phase distribution on the surface of the substrate, wherein all the cylinders form a super-surface structure.
7. The method for preparing the superconducting nanowire single photon detector based on the super-surface structure as claimed in claim 6, wherein after the superconducting nanowire single photon detector is formed, the method further comprises: and coating a protective layer on the surface of one side of the substrate and the surface of the superconducting nanowire layer.
8. The method for preparing the superconducting nanowire single photon detector based on the super-surface structure as claimed in claim 6, wherein: the substrate is a silicon substrate, and the super-surface structure is a silicon-based super-surface structure.
9. The method for preparing the superconducting nanowire single photon detector based on the super-surface structure as claimed in claim 8, wherein: the super-surface structure is a circular silicon-based super-surface structure with parabolic phase distribution.
10. The method for preparing the superconducting nanowire single photon detector based on the super-surface structure as claimed in claim 6, wherein: the superconducting thin film layer is a niobium nitride thin film layer, and the superconducting nanowire layer is a niobium nitride superconducting nanowire layer.
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| WO2023168996A1 (en) * | 2022-03-08 | 2023-09-14 | 南京大学 | Structured superconducting-tape single photon detector and preparation method therefor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023025223A1 (en) * | 2021-08-26 | 2023-03-02 | 中兴通讯股份有限公司 | Grating coupler and optical device |
| WO2023168996A1 (en) * | 2022-03-08 | 2023-09-14 | 南京大学 | Structured superconducting-tape single photon detector and preparation method therefor |
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