CN101846808A - Laser selective focusing component and design method thereof - Google Patents
Laser selective focusing component and design method thereof Download PDFInfo
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- CN101846808A CN101846808A CN201010177518A CN201010177518A CN101846808A CN 101846808 A CN101846808 A CN 101846808A CN 201010177518 A CN201010177518 A CN 201010177518A CN 201010177518 A CN201010177518 A CN 201010177518A CN 101846808 A CN101846808 A CN 101846808A
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- photodetector
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- fresnel zone
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Abstract
The invention discloses a laser selective focusing component and a design method thereof. In the laser selective focusing component, a laser selective lens with a focusing function and an ordinary photoelectric detector are integrated together, wherein the laser selective lens is manufactured by evaporating a metal bright and dark ring according to an Fresnel zone plate principle, can be borne on a glass slide, is externally arranged outside the photoelectric detector and also can be directly evaporated on a substrate of the ordinary photoelectric detector. The structural component can weaken the background noise of a receiving signal in laser communication obviously, extracts a laser signal directly, focuses the laser signal, can also expand the effective photosensitive area of a detection component and enhances the signal-to-noise ratio of a system. Meanwhile, the component is also simpler to prepare and is easy to operate.
Description
Technical field
This patent relates to photodetector components and parts technology, specifically is meant a kind of device and method for designing thereof of utilizing interference effect that laser is carried out selectivity focusing, and it is used for making the laser selective focus device of laser communication.
Background technology
No matter be for optical fiber communication, free-space communication, still for the laser active probe, especially along with the development of quantum communications, detector technology highly sensitive, high s/n ratio all is vital.In order to reduce the dark current of device, generally by reducing the area of device, but the device photosurface reduce to weaken coupling efficiency with front end optical system, cause the reduction of response device.Because decay, beam divergence and the drift of laser in the propagation in atmosphere process, the laser signal that causes receiver to receive is very faint, simultaneously, because the existence of stronger sky background noise, faint laser signal often is submerged among the noise of bias light formation.In order to catch laser signal accurately, obtain higher signal to noise ratio (S/N ratio), receiving system often needs to use super narrow bandpass filter to suppress the interference of sky background noise effectively.But optical filter has also reduced signal energy in the decay background energy, be generally 20% to 80%, simultaneously the general also more complicated, loaded down with trivial details of spectral filtering system.Therefore, any bias light in can the direct filtration received signal, the method for reseptance that directly extracts laser signal all is that technological value is arranged very much.Invent and a kind ofly can omit optical filter direct filtration bias light, extract laser signal, the detector technology that has big light receiving area simultaneously then is that more great technical meaning is arranged for laser communication.
Summary of the invention
The purpose of this patent is exactly to propose a kind of ground unrest that can significantly weaken in the received signal, directly extract laser signal and laser signal is focused on, can enlarge simultaneously effective photosensitive area of sensitive detection parts equivalently, improve the photoelectric detector of system signal noise ratio.
The purpose of this patent is achieved in that
Utilize common growth technology growth photodetector, prepare photodetector, comprise table top, upper/lower electrode preparation etc. by common preparation technology.In order to obtain as far as possible little dark current and big as far as possible response device speed, the actual photosurface of photodetector should be as much as possible little, is generally tens microns.
Preparation laser selective lens can prepare by following two kinds of methods:
One. go up according to Fresnel zone plate principle evaporation metal at microslide (jewel sheet or glass sheet etc.), form the light and shade ring.The microslide of carrying light and shade ring is placed semiconductor photo detector the place ahead, make both spacing just in time equal the focal length of Fresnel zone plate.
Two. the substrate of the photodetector for preparing is carried out attenuated polishing handle, satisfy the focal length requirement, on the substrate of handling well,, form the light and shade ring according to Fresnel zone plate principle evaporation metal until substrate thickness.
At this, we can decide the focal length (prime focus is apart from the distance of zone plate) of Fresnel zone plate from the thickness of the distance of photodetector or substrate according to microslide, according to determining good focal length, the radius size that optical maser wavelength is determined the light and shade ring of Fresnel zone plate.The number of rings of Fresnel zone plate light and shade ring need obtain often, thereby form the coherent length (approximately several micron to tens micron) of the face size dimension of whole Fresnel zone plate much larger than the background bias light, as get 1 millimeter and even bigger, the persistence length of laser under possible condition, obtains as far as possible greatly, because often can reach the magnitude of rice.For the Fresnel zone plate of a fixed sturcture size for preparing on request, have only the laser of specific wavelength on photodetector, to focus on.At this, in order to strengthen the coupling efficiency of front end optical system and detector, because what the diameter of Fresnel zone plate has been provided with is very big, can be the millimeter magnitude, effective photosurface of whole like this receiving device is just improved greatly, can improve 2 orders of magnitude at least than the response with photodetector by area.Yet the photosensitive first equivalent area of the detector that such focusing process forms enlarges only effective for the long laser of persistence length, little for the background bias light owing to coherent length, focussing force can not have been realized, so the equivalent area for the photosensitive unit of background bias light detector does not increase, opposite owing to becket on the Fresnel zone plate has also kept off part background bias light, so the influence of background bias light has further been reduced.
The core of this patent be on the common photoelectric detector by external or on substrate according to Fresnel zone plate principle evaporation metal light and shade ring, have than large photosensistive surface, can filter parasitic light, selectivity and absorb laser and it is had the photodetector of focusing performance thereby formed one.For convenience of explanation, be that example is illustrated with the laser selective focus device of 1.5 micron wave lengths below.
This patent based on principle of work be: for the received signal that transmits from afar, can be approximated to be plane wave, when received signal incides on the laser selective focus device 3, incident light interferes effect via 1, and at 2 places generation convergence prime focus, because interference effect only occurs between the coherent light, has only coherent length can produce interference greater than the light of Fresnel ring size in the light collecting device.For laser, its coherent length is generally greater than 1 meter, 1 lateral dimension in the device for this reason, and therefore, laser signal interferes effect via 1, and assembles at photodetector 2 places, is absorbed by the device layer of having chance with.Yet for other parasitic light, owing to be not coherent light, its coherent length has only micron dimension, for example for the parasitic light of 1.5 micron wave lengths, its coherent length is usually about 50 microns, and the coherence of light wave had just disappeared when the distance between the light and shade striped was greater than 50 microns on 1 for this reason, sees through 1 1.5 microns parasitic light this moment and just can not interfere effect, also just can convergence not take place at 2 places and be absorbed, thereby 1.5 microns parasitic light has directly been weakened greatly at 2 places by device.Simultaneously, because 1 fixed focal length has only the laser of specific wavelength (wavelength equals 1.5 microns) to assemble at 2 places at 2 places, so, for the unmatched light of wavelength (wavelength is not equal to 1.5 microns), after 1, just can not focus on 2 places and be absorbed, but directly disperse propagation by device.At this, 1 area is generally than 2 big several magnitudes of area, see through 1 laser and all can focus on the layer of being had chance with on 2 and absorb, thereby effective photosurface of device 2 has been enhanced several magnitudes, and photoresponse has obtained great enhancing.Therefore, device 3 is direct filter out background noise just, only absorbs laser signal, has both realized the effect of super narrow bandpass optical filter, can increase effective photosurface of device again to a certain extent, thereby improves the signal to noise ratio (S/N ratio) of device.
The advantage of this patent is: this detector not only can focus on absorption to the laser of specific wavelength, can also effectively suppress laser signal parasitic light in addition simultaneously, weakens ground unrest.Simultaneously,, strengthened the photoresponse of device, improved the signal to noise ratio (S/N ratio) of system because the diameter of lens much larger than the photosurface of photodetector reality, in the effective photosurface that increases device, has also improved the coupling efficiency of detector and front end optical system.Simultaneously, also fairly simple, the easy operating of preparation of devices.
Description of drawings
Fig. 1 is the principle schematic of the laser selective focus device of this patent.Wherein, 1 for pressing the laser selective lens that the Fresnel zone plate principle is made, and 2 is photodetector, and 3 is whole laser selective focus device.
Fig. 2 is the structural representation of the InGaAs p-i-n focus device of present embodiment.
Embodiment
Be example with laser selective InGaAs p-i-n focus device below, the embodiment to this patent is described in further detail in conjunction with the accompanying drawings.
Adopt film growth techniques growth successively on semi-insulating InP substrate:
The InP lower electrode layer that n mixes, doping content is 1 * 10
18/ cm
3, thickness is 1 μ m;
The InGaAs absorption layer of involuntary doping, thickness are 2 μ m;
The InP upper electrode layer that p mixes, doping content is 1 * 10
18/ cm
3, thickness is 500nm.
InP upper electrode layer and InGaAs absorption layer that etching p mixes, the InP lower electrode layer top until n mixes forms upper table surface;
Etching n type InP lower electrode layer forms following table until the InP substrate;
At device surface growth of passivation film SiN
x, thickness is 600nm;
Etching electrode hole on p type InP upper electrode layer and n type InP lower electrode layer, evaporation Ti/Pt/Au forms upper/lower electrode respectively.So far, finished the preparation of a common InGaAs p-i-n photodetector.
The InP substrate is carried out attenuated polishing, the focal length size that equals to design until the thickness of substrate.
According to wavelength, focal length, the table top size of InGaAs p-i-n photodetector and the requirement of front end optical system, on the InP substrate,, form laser selective lens 1 according to the light and shade ring of Fresnel zone plate principle evaporation chromium gold.Having finished one to this is the laser selective focus device of prototype with InGaAs p-i-n photodetector.
At this, the formation of laser selective lens 1 also can form the light and shade ring by evaporation chromium gold on microslide, will carry 1 microslide then and place the place apart from a focal length of common InGaAs p-i-n photodetector to get final product.
If make array or line array device, still be above-mentioned technology, be present unit component should be array or the line array device that a kind of identical unit is formed.
Claims (2)
1. laser selective focus device, it is made up of photodetector and laser selective lens, it is characterized in that: being integrated with one on photodetector (2) can carry out the laser selective lens (1) that selectivity focuses on to optical maser wavelength; Described laser selective lens (1) are produced on the microslide that jewel sheet or glass sheet make, and are placed on apart from focal length place of common photoelectric detector, perhaps directly are produced on the common photoelectric substrate of detector.
2. the laser selective lens design method on the device as claimed in claim 1 is characterized in that may further comprise the steps:
1), forms the light and shade ring according to Fresnel zone plate principle evaporation metal;
2) determine the focal length of Fresnel zone plate from the thickness of the distance of photodetector or substrate according to microslide;
3) according to determining good focal length, the radius size that optical maser wavelength is determined the light and shade ring of Fresnel zone plate;
4) relative aperture of the front end optical system that is complementary according to the actual photosurface size of the photodetector for preparing and with photodetector is determined the diameter of Fresnel zone plate, and then the number of rings of definite Fresnel zone plate light and shade ring.
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|---|---|---|---|
| CN201010177518A CN101846808A (en) | 2010-05-14 | 2010-05-14 | Laser selective focusing component and design method thereof |
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| CN201010177518A CN101846808A (en) | 2010-05-14 | 2010-05-14 | Laser selective focusing component and design method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364396A (en) * | 2011-10-24 | 2012-02-29 | 中国科学院西安光学精密机械研究所 | All-optical solid streak camera |
| CN111238363A (en) * | 2018-11-28 | 2020-06-05 | 中国科学院光电技术研究所 | Multi-wave radial shearing interferometer based on Fresnel zone plate |
| CN111477703A (en) * | 2020-04-14 | 2020-07-31 | 北京工业大学 | Large-aperture high-speed photoelectric detector |
| CN113257986A (en) * | 2021-05-11 | 2021-08-13 | 中国科学院上海微系统与信息技术研究所 | Superconducting nanowire single photon detector based on super-surface structure and preparation method thereof |
-
2010
- 2010-05-14 CN CN201010177518A patent/CN101846808A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364396A (en) * | 2011-10-24 | 2012-02-29 | 中国科学院西安光学精密机械研究所 | All-optical solid streak camera |
| CN102364396B (en) * | 2011-10-24 | 2015-05-20 | 中国科学院西安光学精密机械研究所 | All-optical solid streak camera |
| CN111238363A (en) * | 2018-11-28 | 2020-06-05 | 中国科学院光电技术研究所 | Multi-wave radial shearing interferometer based on Fresnel zone plate |
| CN111238363B (en) * | 2018-11-28 | 2021-09-07 | 中国科学院光电技术研究所 | Multi-wave radial shearing interferometer based on Fresnel zone plate |
| CN111477703A (en) * | 2020-04-14 | 2020-07-31 | 北京工业大学 | Large-aperture high-speed photoelectric detector |
| CN113257986A (en) * | 2021-05-11 | 2021-08-13 | 中国科学院上海微系统与信息技术研究所 | Superconducting nanowire single photon detector based on super-surface structure and preparation method thereof |
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Open date: 20100929 |