CN111933739A - Back incidence silicon photoelectric detector based on one-dimensional grating and preparation method - Google Patents
Back incidence silicon photoelectric detector based on one-dimensional grating and preparation method Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 82
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a back-incidence silicon photoelectric detector based on a one-dimensional grating and a preparation method, belonging to the technical field of the photoelectric detector, comprising a silicon substrate, wherein the front surface of the silicon substrate is provided with a P-type ohmic contact layer, a one-dimensional grating layer, a passivation film layer, a reflection film layer, a protection ring and a P-type ohmic contact electrode; an N-type ohmic contact layer, an anti-reflection film layer and an N-type ohmic contact electrode are arranged on the back surface of the silicon substrate; the P-type ohmic contact layer and the N-type ohmic contact layer are symmetrically arranged on the front surface and the back surface of the silicon substrate. The back incidence silicon photoelectric detector based on the one-dimensional grating introduces the one-dimensional grating structure, adopts a vertical back incidence mode, effectively diffracts light under the action of the grating, reflects most of light under the condition of a certain diffraction angle instead of reflecting in the vertical direction, can effectively increase the optical path of the light in Si-PIN, increases the absorption of the Si-PIN on long-wavelength light, and improves the responsivity of the Si-PIN under the condition of the long-wavelength light.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectric technology, and particularly relates to a back-incident silicon photoelectric detector based on a one-dimensional grating and a preparation method thereof.
Background
Infrared radiation is an electromagnetic wave having a wavelength of 760nm to 1mm, which is outside the visible range and thus cannot be observed directly with the naked eye. The infrared detector converts invisible infrared radiation into a measurable signal, so that people obtain more abundant information of an objective world. Because of this, the infrared detector is more and more regarded as important and applied to more and more fields. The Si-PIN detector is widely researched due to the advantages of simple manufacturing process, small average ionization energy, small volume, fast time response, high sensitivity, good energy linearity and the like. However, the light absorption cutoff wavelength of Si material is 1100nm, and the silicon material has a low light response in the near infrared band (about 1000 nm), and this problem needs to be improved by increasing the thickness of the depletion layer when a photodiode is manufactured. However, the current Si photodiode still has a problem of low optical response in the near infrared band (about 1000 nm).
Disclosure of Invention
The invention aims to provide a back incidence silicon photoelectric detector based on a one-dimensional grating, and aims to solve the problem that the existing Si photoelectric diode still has low photoresponse of near infrared wave band (about 1000 nm).
In order to achieve the purpose, the invention adopts the technical scheme that: the back incidence silicon photoelectric detector comprises a silicon substrate, wherein a P-type ohmic contact layer, a one-dimensional grating layer, a passivation film layer, a reflection film layer, a protection ring and a P-type ohmic contact electrode are arranged on the front surface of the silicon substrate, the protection ring surrounds the P-type ohmic contact layer, the one-dimensional grating layer is arranged on the P-type ohmic contact layer, the passivation film layer is arranged on the front surface of the silicon substrate, the P-type ohmic contact electrode is arranged between the P-type ohmic contact layer and the protection ring, and the reflection film layer is arranged on the passivation film layer between the P-type ohmic contact electrodes; an N-type ohmic contact layer, an antireflection film layer and an N-type ohmic contact electrode are arranged on the back surface of the silicon substrate, the antireflection film layer is arranged on the N-type ohmic contact layer, and the N-type ohmic contact electrode surrounds the N-type ohmic contact layer; the P-type ohmic contact layer and the N-type ohmic contact layer are symmetrically arranged on the front surface and the back surface of the silicon substrate.
As another embodiment of the present application, the silicon substrate is a lightly doped N-type silicon substrate.
As another embodiment of the present application, the grating period d of the one-dimensional grating layer is 410 and 420 nm; the grating width s is 110-180 nm; the grating height h is 160-.
In another embodiment of the present application, the passivation layer is made of silicon dioxide and has a thickness of 100nm and 800 nm.
As another embodiment of the present application, the material of the reflective film layer is gold or aluminum, and the thickness is 100nm and 150 nm.
As another embodiment of the present application, the anti-reflection film layer is made of silicon nitride and has a thickness of 110-130 nm.
Another objective of the present invention is to provide a method for manufacturing a back-incident silicon photodetector based on a one-dimensional grating, the method comprising:
forming a P-type ohmic contact layer and a protection ring on the front surface of the silicon substrate by adopting ion implantation, and forming an N-type ohmic contact layer on the back surface of the silicon substrate;
photoetching a one-dimensional grating layer on the P-type ohmic contact layer;
depositing and forming a P-type ohmic contact electrode on the front surface of the silicon substrate; depositing an N-type ohmic contact electrode on the back surface of the silicon substrate;
depositing a passivation film layer on the front surface of the silicon substrate, exposing the P-type ohmic contact electrode by photoetching, wherein the region surrounded by the P-type ohmic contact electrode is a front active region; the region surrounded by the N-type ohmic contact electrode is a back active region;
sputtering a reflecting film layer on the front active area;
and photoetching an antireflection film layer on the back active region.
As another embodiment of the present application, after forming the P-type ohmic contact layer and the guard ring on the front surface of the silicon substrate by ion implantation, and after forming the N-type ohmic contact layer on the back surface of the silicon substrate, the constant temperature annealing is performed before the one-dimensional grating layer is etched on the P-type ohmic contact layer.
As another embodiment of the present application, before forming the P-type ohmic contact layer and the guard ring on the front surface of the silicon substrate by using ion implantation, the silicon substrate is polished on both sides and cleaned by using deionized water before forming the N-type ohmic contact layer on the back surface of the silicon substrate.
As another embodiment of the present application, a lithographic antireflective coating layer on the N-type ohmic contact layer includes: and photoetching an antireflection film pattern, masking by using photoresist, carrying out plasma etching, and forming an antireflection film layer in an active area on the back of the silicon substrate by using a PECVD (plasma enhanced chemical vapor deposition) process.
The back incidence silicon photoelectric detector based on the one-dimensional grating has the advantages that: compared with the prior art, the back incidence silicon photoelectric detector based on the one-dimensional grating introduces the one-dimensional grating structure, adopts a vertical back incidence mode, effectively diffracts light under the action of the grating, reflects most of the light under the condition of a certain diffraction angle instead of reflecting in the vertical direction, can effectively increase the optical path of the light in Si-PIN, increases the absorption of the Si-PIN on long-wavelength light, improves the responsivity of the Si-PIN under the condition of the long-wavelength light, and improves the photoresponse of the Si photoelectric diode in the near infrared band of about 1000 nm.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a first schematic structural diagram of a one-dimensional grating-based back-incident silicon photodetector according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a back-incident silicon photodetector based on a one-dimensional grating according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a third main view structure of a back-incident silicon photodetector based on a one-dimensional grating according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a front view structure of a back-incident silicon photodetector based on a one-dimensional grating according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a front view structure of a back-incident silicon photodetector based on a one-dimensional grating according to an embodiment of the present invention;
fig. 6 is a schematic diagram six of a front view structure of a back-incident silicon photodetector based on a one-dimensional grating according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a partially enlarged structure of a one-dimensional grating layer according to an embodiment of the present invention.
In the figure: 1. a silicon substrate; 2. an N-type ohmic contact layer; 3. a guard ring 3; 4. a P-type ohmic contact layer; 5. a one-dimensional grating layer; 6. a P-type ohmic contact electrode; 7. an N-type ohmic contact electrode; 8. passivating the film layer; 9. a reflective film layer; 10. and (3) an anti-reflection film layer.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 6 and fig. 7, a back-incident silicon photodetector based on a one-dimensional grating according to the present invention will now be described. The back incidence silicon photoelectric detector based on the one-dimensional grating comprises a silicon substrate 1, wherein a P-type ohmic contact layer 4, a one-dimensional grating layer 5, a passivation film layer 8, a reflection film layer 9, a protection ring 3 and a P-type ohmic contact electrode 6 are arranged on the front surface of the silicon substrate 1, the protection ring 3 surrounds the P-type ohmic contact layer 4, the one-dimensional grating layer 5 is arranged on the P-type ohmic contact layer 4, the passivation film layer 8 is arranged on the front surface of the silicon substrate 1, the P-type ohmic contact electrode 6 is arranged between the P-type ohmic contact layer 4 and the protection ring 3, and the reflection film layer 9 is arranged on the passivation film layer 8 between the P-type ohmic contact electrodes 6; an N-type ohmic contact layer 2, an antireflection film layer 10 and an N-type ohmic contact electrode 7 are arranged on the back surface of the silicon substrate 1, the antireflection film layer 10 is arranged on the N-type ohmic contact layer 2, and the N-type ohmic contact electrode 7 surrounds the N-type ohmic contact layer 2; the P-type ohmic contact layer 4 and the N-type ohmic contact layer 2 are symmetrically arranged on the front surface and the back surface of the silicon substrate 1.
Compared with the prior art, the back incidence silicon photoelectric detector based on the one-dimensional grating introduces the one-dimensional grating structure, adopts a vertical back incidence mode, effectively diffracts light under the action of the grating, reflects most of the light under the condition of a certain diffraction angle instead of reflecting in the vertical direction, can effectively increase the optical path of the light in Si-PIN, increases the absorption of the Si-PIN on long-wavelength light, improves the responsivity of the Si-PIN under the condition of the long-wavelength light, and improves the photoresponse of the Si photoelectric diode in the near infrared band of about 1000 nm.
When the P-type ohmic contact layer 4 is formed, the protection ring 3 is formed around the P-type ohmic contact layer, so that dark current caused by surface leakage current can be effectively reduced; the anti-reflection film layer 10 on the back can reduce the reflection of incident light on the surface, and the reflection film layer 9 can increase the reflection of light on the emergent surface, so that the quantum efficiency and the responsivity of the device are improved; antireflection film layer 10 may also function to protect the active area on the back.
The silicon substrate 1 used in the invention has a simple structure because the epitaxial materials are all Si materials, thus simplifying the epitaxial growth and the process preparation of the device structure. The photoelectric detector has high responsivity under the condition of long-wavelength light, has the advantages of small volume, low power consumption, high temperature resistance and the like, and can be applied to a plurality of aspects such as an optical fiber communication system, an optical fiber sensor, an optical isolator, television image transmission, weak light signal detection, a receiving device of a laser range finder and the like.
As a specific implementation manner of the one-dimensional grating-based back-incident silicon photodetector provided by the present invention, the silicon substrate 1 is a lightly doped N-type silicon substrate 1.
As a specific implementation manner of the embodiment of the present invention, please refer to fig. 7, in which the grating period d of the one-dimensional grating layer 5 is 410-; the grating width s is 110-180 nm; the grating height h is 160-. For example, the grating period d is 412nm, 415nm, 416nm, 418nm, 419nm, etc.; the grating width s is 115nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 175 nm; the grating height h is 165nm, 170nm, 175nm, 182nm, 185 nm.
Referring to fig. 4 to 6, as a specific implementation manner of the embodiment of the present invention, the passivation layer 8 is made of silicon dioxide and has a thickness of 100nm and 800 nm. For example, the thickness is 110nm, 125nm, 130nm, 140nm, 200nm, 300nm, 450nm, 600nm, 700nm, 750nm, or the like.
As a specific implementation manner of the embodiment of the invention, please refer to fig. 5 to 6, the material of the reflective film layer 9 is gold (Au) or aluminum (Al), and the thickness is 100nm and 150 nm. For example, the thickness is 110nm, 125nm, 130nm, 140nm, or the like.
Referring to fig. 6, as a specific implementation manner of the embodiment of the present invention, the material of the anti-reflection film layer 10 is silicon nitride (Si)3N4) The thickness is 110-130 nm. For example, the thickness is 120nm, 125nm, 125.5nm, or the like.
It should be noted that the photodetector and the manufacturing method provided in this embodiment may be any one of the numerical ranges given in the above embodiments.
Another objective of the present invention is to provide a method for manufacturing a back-incident silicon photodetector based on a one-dimensional grating, the method comprising:
polishing the two sides of a lightly doped N-type silicon substrate 1 material, and cleaning the polished material by using deionized water;
step two, adopting ion implantation to form a P-type ohmic contact layer 4 and a protection ring 3 on the front surface of the silicon substrate 1, and forming an N-type ohmic contact layer 2 on the back surface of the silicon substrate 1, as shown in fig. 1;
step three, after ion implantation, constant temperature annealing is carried out to eliminate damage after ion implantation;
step four, grating pattern photoetching is carried out, photoresist is used for masking, plasma etching is carried out, and a one-dimensional grating layer 5 is formed on the P-type ohmic contact layer 4, which is shown in figure 2;
step five, manufacturing an electrode contact pattern on the detector by using a conventional semiconductor photoetching process, and forming a contact electrode by using an electron beam evaporation system through deposition, wherein the method specifically comprises the following steps: depositing and forming a P-type ohmic contact electrode 6 on the front surface of the silicon substrate 1; depositing an N-type ohmic contact electrode 7 on the back surface of the silicon substrate 1, see FIG. 3;
sixthly, depositing SiO on the front surface of the silicon substrate 12Passivating the film layer 8, and removing the medium on the P-type ohmic contact electrode 6 by photoetching to expose the P-type ohmic contact electrode 6, wherein the region surrounded by the P-type ohmic contact electrode 6 is a front active region; the region surrounded by the N-type ohmic contact electrode 7 is a back active region, see fig. 4;
step seven, sputtering a metal reflection film layer 9 of gold (Au) or aluminum (Al) on the front active area by using a metal sputtering process, and referring to FIG. 5;
step eight, performing anti-reflection film pattern photoetching, using photoresist as a mask, performing Plasma etching, and then forming Si in the back active region by utilizing a PECVD (Plasma Enhanced Chemical Vapor Deposition) process3N4See fig. 6 for an antireflection film.
According to the preparation method provided by the invention, the grating is formed on the P-type ohmic contact layer 4 through semiconductor photoetching and etching processes, and light is effectively diffracted under the action of the grating, so that most of light is reflected under the condition of a certain diffraction angle instead of being reflected in the vertical direction, the optical path of the light in the Si photoelectric detector can be effectively increased, the absorption of the Si photoelectric detector on the light is increased, and the responsivity of the Si photoelectric detector is improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A back-incident silicon photodetector based on a one-dimensional grating, comprising: the front surface of the silicon substrate is provided with a P-type ohmic contact layer, a one-dimensional grating layer, a passivation film layer, a reflection film layer, a protection ring and a P-type ohmic contact electrode, the protection ring surrounds the periphery of the P-type ohmic contact layer, the one-dimensional grating layer is arranged on the P-type ohmic contact layer, the passivation film layer is arranged on the front surface of the silicon substrate, the P-type ohmic contact electrode is arranged between the P-type ohmic contact layer and the protection ring, and the reflection film layer is arranged on the passivation film layer between the P-type ohmic contact electrodes;
an N-type ohmic contact layer, an antireflection film layer and an N-type ohmic contact electrode are arranged on the back surface of the silicon substrate, the antireflection film layer is arranged on the N-type ohmic contact layer, and the N-type ohmic contact electrode surrounds the N-type ohmic contact layer;
the P-type ohmic contact layer and the N-type ohmic contact layer are symmetrically arranged on the front surface and the back surface of the silicon substrate.
2. The one-dimensional grating-based back-incident silicon photodetector of claim 1, wherein the silicon substrate is a lightly doped N-type silicon substrate.
3. The back-incident silicon photodetector based on one-dimensional grating as claimed in claim 1, wherein the grating period d of the one-dimensional grating layer is 410 and 420 nm; the grating width s is 110-180 nm; the grating height h is 160-.
4. The back-incident silicon photodetector of claim 1, wherein the passivation layer is made of silicon dioxide and has a thickness of 100-800 nm.
5. The back-incident silicon photodetector of claim 1, wherein the reflective film is made of gold or aluminum and has a thickness of 100-150 nm.
6. The back-incident silicon photodetector of claim 1, wherein the anti-reflection film layer is made of silicon nitride and has a thickness of 110-130 nm.
7. A method for manufacturing a one-dimensional grating-based back-incident silicon photodetector as claimed in any one of claims 1 to 6, wherein the method for manufacturing comprises:
forming a P-type ohmic contact layer and a protection ring on the front surface of the silicon substrate by adopting ion implantation, and forming an N-type ohmic contact layer on the back surface of the silicon substrate;
photoetching a one-dimensional grating layer on the P-type ohmic contact layer;
depositing and forming a P-type ohmic contact electrode on the front surface of the silicon substrate; depositing an N-type ohmic contact electrode on the back surface of the silicon substrate;
depositing a passivation film layer on the front surface of the silicon substrate, exposing the P-type ohmic contact electrode by photoetching, wherein the region surrounded by the P-type ohmic contact electrode is a front active region; the region surrounded by the N-type ohmic contact electrode is a back active region;
sputtering a reflecting film layer on the front active area;
and photoetching an antireflection film layer on the back active region.
8. The method according to claim 7, wherein the P-type ohmic contact layer and the guard ring are formed on the front surface of the silicon substrate by ion implantation, and after the N-type ohmic contact layer is formed on the back surface of the silicon substrate, the constant temperature annealing is performed before the one-dimensional grating layer is etched on the P-type ohmic contact layer.
9. The method according to claim 7, wherein the P-type ohmic contact layer and the guard ring are formed on the front surface of the silicon substrate by ion implantation, and the silicon substrate is polished on both sides and cleaned with deionized water before the N-type ohmic contact layer is formed on the back surface of the silicon substrate.
10. The method of claim 7, wherein the step of etching an anti-reflection film layer on the N-type ohmic contact layer comprises: and photoetching an antireflection film pattern, masking by using photoresist, carrying out plasma etching, and forming an antireflection film layer in an active area on the back of the silicon substrate by using a PECVD (plasma enhanced chemical vapor deposition) process.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768550A (en) * | 2020-12-18 | 2021-05-07 | 中国电子科技集团公司第四十四研究所 | Structure for improving responsivity of back-illuminated photodiode and manufacturing method |
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| CN113359236A (en) * | 2021-07-16 | 2021-09-07 | 联合微电子中心有限责任公司 | Grating coupling structure based on back process and preparation method |
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